CN102117842A - Infrared focal plane detector packaging window and manufacturing method thereof - Google Patents
Infrared focal plane detector packaging window and manufacturing method thereof Download PDFInfo
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- CN102117842A CN102117842A CN2009102476469A CN200910247646A CN102117842A CN 102117842 A CN102117842 A CN 102117842A CN 2009102476469 A CN2009102476469 A CN 2009102476469A CN 200910247646 A CN200910247646 A CN 200910247646A CN 102117842 A CN102117842 A CN 102117842A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides an infrared focal plane detector packaging window and a manufacturing method thereof. The packaging window comprises a substrate, wherein an infrared optical thin film for wavelength cutoff is plated in the middle part of the front side of the substrate; an infrared optical thin film for wavelength cutoff is plated in the middle part of the back side of the substrate; and a metal thin film for packaging is plated on the periphery. The manufacturing method is as follows: the infrared optical thin films and the metal thin film are all plated by using a vacuum thermal evaporation method. The wavelength cutoff function of the packaging window and a vacuum packaging function are integrated, and two functions are simultaneously realized on the same substrate, thereby increasing the packaging yield, and solving the problem of vacuum air leakage of the original packaging window.
Description
Technical field
The present invention relates to a kind of optics, relate in particular to a kind of package window of infrared focal plane detector and preparation method thereof.
Background technology
Infrared focal plane detector is the core component of infrared imaging optical system, is widely used in fields such as infrared remote sensing, night vision, medical treatment, rescue, military affairs, electric power.Infrared focal plane detector is made up of package window, photoelectric conversion layer, reading circuit and encapsulation shell.Wherein package window has following effect:
1, wavelength cut-off
The wave-length coverage of photoelectric conversion layer response is very wide, need filter out the light wave that need not to survey, and this function realizes by be coated with infrared optical thin film on package window.
2, Vacuum Package
Photoelectric conversion layer need be under vacuum state could long-term stable operation, package window also just plays sealing function simultaneously.
At present, cut-off wavelength is to realize by the method that is coated with infrared optical thin film, and Vacuum Package then realizes by brushing fluid sealant.There is following shortcoming in above-mentioned method for packing:
1, packaging technology complexity
Encapsulation process need be passed through several steps such as cleaning, gluing, curing, and the process complexity has reduced the encapsulation rate of finished products.
2, vacuum performance is poor
The detector of glue spreading method encapsulation leaks gas easily, has reduced the useful life of detector.
Summary of the invention
Purpose of the present invention in order to address the above problem, provides a kind of package window of infrared focal plane detector and preparation method thereof exactly.
In order to achieve the above object, the present invention has adopted following technical scheme: a kind of package window of infrared focal plane detector, comprise substrate, the mid portion in substrate front is coated with the infrared optical thin film that is useful on wavelength cut-off, the mid portion of substrate back is coated with the infrared optical thin film that is useful on wavelength cut-off, is coated with the metallic film that is useful on encapsulation all around.
Described substrate selects for use Ge, Si, ZnS or ZnSe to make, and described infrared optical thin film selects for use among Ge, PbTe, ZnSe or the ZnS one or more to be coated with.
Described metallic film comprises bottom riveting layer, intermediate barrier layer and surface soldered layer; Riveting layer selects for use Cr or Ti to be coated with; Barrier layer selects for use Ni, Pt or Pd to be coated with; Weld layer is coated with Au.
The thickness that is coated with of the bottom riveting layer of described formation metallic film, intermediate barrier layer and surface soldered layer is respectively: bottom riveting layer 10～70nm; Intermediate barrier layer 50～900nm; Surface soldered layer 50～4000nm.
The manufacture method of above-mentioned package window of infrared focal plane detector is that the mid portion in the substrate front is coated with infrared optical thin film with the vacuum thermal evaporation method; Mid portion at substrate back is coated with infrared optical thin film with the vacuum thermal evaporation method, is coated with metallic film with the vacuum thermal evaporation method all around;
The process for plating condition of infrared optical thin film is:
Vacuum degree 1～8 * 10
-4Pa;
Temperature: 80～200 ℃;
Evaporation rate: 0.5～3nm/s;
The process for plating condition of metallic film is:
Vacuum degree 1～5 * 10
-4Pa;
Temperature: 60～200 ℃;
Evaporation rate: 0.3～3nm/s.
The present invention integrates the wavelength cut-off function and the Vacuum Package function of package window, has realized two kinds of functions on a substrate simultaneously, has not only improved the encapsulation rate of finished products but also has solved the problem of original package window vacuum gas leakage.
Description of drawings
Fig. 1 is the structural representation of facing of package window of infrared focal plane detector of the present invention;
Fig. 2 is the sectional structure schematic diagram of package window of infrared focal plane detector of the present invention.
Embodiment
Referring to Fig. 1, Fig. 2, package window of infrared focal plane detector of the present invention, comprise substrate 1, the mid portion in substrate front is coated with the infrared optical thin film 2 that is useful on wavelength cut-off, the mid portion of substrate back is coated with the infrared optical thin film 3 that is useful on wavelength cut-off, is coated with the metallic film 4 that is useful on encapsulation all around.
Substrate wherein selects for use Ge, Si, ZnS or ZnSe to make, and described infrared optical thin film selects for use among Ge, PbTe, ZnSe or the ZnS one or more to be coated with.
Metallic film comprises bottom riveting layer, intermediate barrier layer and surface soldered layer; Riveting layer selects for use Cr or Ti to be coated with, and being coated with thickness is 10～70nm; Barrier layer selects for use Ni, Pt or Pd to be coated with, and being coated with thickness is 50～900nm; Weld layer is coated with Au, and being coated with thickness is 50～4000nm.
The manufacture method of package window of infrared focal plane detector is that the mid portion in the substrate front is coated with infrared optical thin film with the vacuum thermal evaporation method; Mid portion at substrate back is coated with infrared optical thin film with the vacuum thermal evaporation method, is coated with metallic film with the vacuum thermal evaporation method all around.When being coated with.The part of not plating is covered with mask pattern, and the mask pattern structure is utilized the photoetching method preparation.
Concrete processing step is:
1, cleaning substrate
2, with the regional masked of using of the metallic film of substrate back;
3, the mid portion at substrate back is coated with infrared optical thin film;
4, the mask in metallic film zone is covered in removal;
5, the mid portion in the substrate front is coated with infrared optical thin film;
6, with the infrared optical thin film masked of substrate back;
7, around substrate back, be coated with metallic film;
8, remove the mask of the infrared optical thin film of covering the back side;
9, cleaning substrate is finished the making of package window.
In above-mentioned manufacturing process, the process for plating condition of infrared optical thin film is: vacuum degree 1～8 * 10
-4Pa; Temperature: 80～200 ℃; Evaporation rate: 0.5～3nm/s.The process for plating condition of metallic film is: vacuum degree 1～5 * 10-4Pa; Temperature: 60～200 ℃; Evaporation rate: 0.3～3nm/s.
Embodiment 1
According to above-mentioned manufacture method, made the thermal imager package window of infrared focal plane detector that a kind of 7.0um ends.
Substrate material is selected Si for use, and infrared thin-film material is selected Ge and ZnS for use, and the metal solder layer material is selected Cr, Ni, Au for use.
The infrared optical thin film structure at the back side is 1Sm-1.256L-2.951H-2.452L-2.752H2.274L-2.186H-2.407L-2.75 8H-2.612L-2.867H-2.153L-2.201H-2.693L-3.038H-2.591L-4.71 4H-2.66L-3.432H-3.525L-4.319H-2.382L-3.861H-4.085L-3.257 H-2.134L-5.305H-6.288L, wherein Sm represents the Si substrate, H represents Ge, L represents ZnS, and data are the optical unit data.
Positive optical thin-film structure is 1Sm-1.198H-0.783L-1.362H-0.796L-1.46H0.859L-0.982H-1.247 L-1.003H-1.307L-0.684H-1.128L-1.064H-1.137L-1.237H-1.307 L-1.682H-1.148L-1.815H-1.072L-1.162H-1.84L-1.446H-1.49L-1.261H-1.65L-1.516H-1.257L-1.996H-1.655L-1.901H-2.084L-2 .144H-1.633L-2.195H-1.727L-2.381H-2.36L-1.053H-2.657L-2. 381H-1.441L-6.499H-5.315L. Wherein Sm represents the Si substrate, and H represents Ge, and L represents ZnS, and data are the optical unit data.
The process conditions that above-mentioned optical thin film is coated with are vacuum degree 3～6 * 10
-4Pa; Temperature: 150 ℃; Evaporation rate: 1～3nm/s
The metallic film structure at the back side is: bottom riveting layer plating Cr, and thickness is 50nm, middle level barrier layer plating Ni, thickness is 400nm, top layer weld layer plating Au, thickness is 2000nm.The process conditions that are coated with are vacuum degree 3～4 * 10
-4Pa; Temperature: 120 ℃; Evaporation rate: 0.3～3nm/s.
Embodiment 2
According to above-mentioned manufacture method, made the package window of infrared focal plane detector that a kind of 8.5～12um sees through.
Substrate material is selected Ge for use, and infrared thin-film material is selected PbTe and ZnSe for use, and the metal solder layer material is selected Ti, Ni, Au for use.
The infrared optical thin film structure at the back side is 1Sm-0.478L-1.041H-0.994L-1.101H-1.006L-1.004H-0.972L-1.3 42H-0.971L-0.971H-1.011L-1.006H-0.561L-0.811L-1.023H-1.4 47L-1.732H-1.434L-1.624H-1.577L-1.033H-1.542L-1.81H-1.35 9L-2.209H-0.983L-1.133L-1.595H-1.818L-2.618H-1.608L-1.61 1H-2.375L-2.352H-0.649L-3.551H-3.7L.Wherein Sm represents the Ge substrate, and H represents PbTe, and L represents ZnSe, and data are the optical unit data.
Positive optical thin-film structure is 1Sm-1.389H-0.122L-1.393H-1.121L-1.043H-1.051L-1.027H-1.0 38L-1.023H-1.034L-1.021H-1.032L-1.022H-1.033L-1.023H-1.0 35L-1.027H-1.043L-1.04H-1.075L-1.02H-0.518L.Wherein Sm represents the Ge substrate, and H represents PbTe, and L represents ZnSe, and data are the optical unit data.
The process conditions that above-mentioned optical thin film is coated with are vacuum degree 4～6 * 10
-4Pa; Temperature: 150 ℃; Evaporation rate: 0.8～1.0nm/s.
The structure of back metal film is: bottom riveting layer plating Ti, and thickness is 30nm, middle level barrier layer plating N, layer thickness is 200nm, top layer weld layer plating Au, thickness is 300nm.The process conditions that are coated with are vacuum degree 3～4 * 10
-4Pa; Temperature: 150 ℃; Evaporation rate: 0.5～1.2nm/s.
Claims (5)
1. package window of infrared focal plane detector, it is characterized in that: comprise substrate, the mid portion in substrate front is coated with the infrared optical thin film that is useful on wavelength cut-off, the mid portion of substrate back is coated with the infrared optical thin film that is useful on wavelength cut-off, is coated with the metallic film that is useful on encapsulation all around.
2. package window of infrared focal plane detector as claimed in claim 1 is characterized in that: described substrate selects for use Ge, Si, ZnS or ZnSe to make, and described infrared optical thin film selects for use among Ge, PbTe, ZnSe or the ZnS one or more to be coated with.
3. package window of infrared focal plane detector as claimed in claim 1 is characterized in that: described metallic film comprises bottom riveting layer, intermediate barrier layer and surface soldered layer; Riveting layer selects for use Cr or Ti to be coated with; Barrier layer selects for use Ni, Pt or Pd to be coated with; Weld layer is coated with Au.
4. package window of infrared focal plane detector as claimed in claim 3 is characterized in that: the thickness that is coated with of the bottom riveting layer of described formation metallic film, intermediate barrier layer and surface soldered layer is respectively: bottom riveting layer 10～70nm; Intermediate barrier layer 50～900nm; Surface soldered layer 50～4000nm.
5. the manufacture method of package window of infrared focal plane detector as claimed in claim 1, it is characterized in that: the mid portion in the substrate front is coated with infrared optical thin film with the vacuum thermal evaporation method; Mid portion at substrate back is coated with infrared optical thin film with the vacuum thermal evaporation method, is coated with metallic film with the vacuum thermal evaporation method all around;
The process for plating condition of infrared optical thin film is:
Vacuum degree 1～8 * 10
-4Pa;
Temperature: 80～200 ℃;
Evaporation rate: 0.5～3nm/s;
The process for plating condition of metallic film is:
Vacuum degree 1～5 * 10
-4Pa;
Temperature: 60～200 ℃;
Evaporation rate: 0.3～3nm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102476469A CN102117842A (en) | 2009-12-30 | 2009-12-30 | Infrared focal plane detector packaging window and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870211A (en) * | 2016-05-17 | 2016-08-17 | 歌尔声学股份有限公司 | Optical sensor packaging structure and manufacturing method thereof |
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN108459361A (en) * | 2018-04-12 | 2018-08-28 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window and preparation method thereof |
| CN108962730A (en) * | 2018-07-11 | 2018-12-07 | 无锡奥夫特光学技术有限公司 | A kind of preparation method of infrared optical window |
| CN108983329A (en) * | 2018-07-11 | 2018-12-11 | 无锡奥夫特光学技术有限公司 | Prepare the process of infrared optical window |
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| CN2511984Y (en) * | 2001-12-29 | 2002-09-18 | 中国科学院上海技术物理研究所 | Long-wave length infrared wide-band filter |
| WO2005022900A2 (en) * | 2003-08-26 | 2005-03-10 | Redshift Systems Corporation | Infrared camera system |
| CN1820885A (en) * | 2006-03-24 | 2006-08-23 | 中国科学院上海技术物理研究所 | Vacuum seal welding method for window and optic window of low temperature metal Dewar |
| CN1862296A (en) * | 2006-06-08 | 2006-11-15 | 上海欧菲尔光电技术有限公司 | Micro-integrated narrow-band filter array and preparing method thereof |
| CN102002672A (en) * | 2009-08-31 | 2011-04-06 | 上海欧菲尔光电技术有限公司 | Method for metallizing infrared focal plane encapsulated window |
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2009
- 2009-12-30 CN CN2009102476469A patent/CN102117842A/en active Pending
Patent Citations (5)
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| CN2511984Y (en) * | 2001-12-29 | 2002-09-18 | 中国科学院上海技术物理研究所 | Long-wave length infrared wide-band filter |
| WO2005022900A2 (en) * | 2003-08-26 | 2005-03-10 | Redshift Systems Corporation | Infrared camera system |
| CN1820885A (en) * | 2006-03-24 | 2006-08-23 | 中国科学院上海技术物理研究所 | Vacuum seal welding method for window and optic window of low temperature metal Dewar |
| CN1862296A (en) * | 2006-06-08 | 2006-11-15 | 上海欧菲尔光电技术有限公司 | Micro-integrated narrow-band filter array and preparing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870211A (en) * | 2016-05-17 | 2016-08-17 | 歌尔声学股份有限公司 | Optical sensor packaging structure and manufacturing method thereof |
| CN105870211B (en) * | 2016-05-17 | 2017-06-20 | 歌尔股份有限公司 | A kind of optical sensor package structure and its manufacture method |
| CN105914252A (en) * | 2016-06-12 | 2016-08-31 | 中国科学院上海技术物理研究所 | Ultraviolet and infrared double color focal plane detector array, performance design and manufacturing method thereof |
| CN105914252B (en) * | 2016-06-12 | 2017-06-27 | 中国科学院上海技术物理研究所 | Ultraviolet infrared double color focus plane detector array and its performance design and preparation method |
| CN108459361A (en) * | 2018-04-12 | 2018-08-28 | 无锡奥夫特光学技术有限公司 | A kind of infrared optical window and preparation method thereof |
| CN108962730A (en) * | 2018-07-11 | 2018-12-07 | 无锡奥夫特光学技术有限公司 | A kind of preparation method of infrared optical window |
| CN108983329A (en) * | 2018-07-11 | 2018-12-11 | 无锡奥夫特光学技术有限公司 | Prepare the process of infrared optical window |
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Application publication date: 20110706 |