CN101893483A - Packaging technology and packaging device of non-refrigerated infrared focal plane array device - Google Patents
Packaging technology and packaging device of non-refrigerated infrared focal plane array device Download PDFInfo
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Abstract
The invention discloses a packaging device of a non-refrigerated infrared focal plane array device and is characterized by comprising a body and a cover which are matched to work and are packaged into a whole by heating and tightly compression in a vacuum chamber, wherein (1) the body comprises a first substrate, the surface of the substrate is provided with a heavily doped region with P and N properties, the middle of the substrate is provided with a strip-shaped metal border, the upper part inside the strip-shaped metal border region is provided with a reading circuit region, a focal plane array region is arranged on the lower part, the area of the heavily doped region is larger than that of the focal plane array region which is provided with M*N units, a plurality of pressure welding discs are arranged between the strip-shaped metal pattern and the substrate edge, and a plurality of reference resistances are arranged in the focal plane array region; and (2) the cover comprises a second substrate, two sides of the second substrate are provided with diamond-like carbon films, any side of the second substrate is provided with a cover metal border corresponding to the strip-shaped metal border in the body, and a metal solder is arranged on the cover metal border.
Description
Technical field
The present invention relates to the optoelectronic package technical field, be specifically related to the vacuum sealing technique field that uncooled ir is surveyed.
Background technology
Electronic vacuum encapsulation is a great problem that electron device is controlled cost, traditional metal and ceramic package complex process, and the cost height, and need the photoelectric device of vacuum condition work, testing cost is also very expensive.This packing forms can utilize existing microelectric technique, reduces the cost of infrared vacuum device greatly.
Along with the development of integrated circuit and semiconductor process techniques, the sensing circuit of non-refrigerating infrared focal plane device also has been integrated on the unified substrate.Doing device architecture above the sensing circuit of microelectronic technique has become the technology trend in this field, and after finishing such technology on the unified silicon chip, through characteristic test, scribing is carried out in mark, carries out the encapsulation of monolithic at last more so.In this technological process, the test generalized case all must provide high vacuum test environment and effective radiation source, this has brought certain degree of difficulty to test, and has increased the operating cost of test environment virtually.And traditional metal or ceramic package be except the shell of costliness, optical window, and GETTER, TEC outside the parts such as NTC, also relates to complicated welding technology, and as the optical window edge metalization, the indium soldering connects, and laser bonding vacuumizes etc.And the condition of part technology as vacuumizing, it all is very harsh that the indium soldering connects etc., cost is also very high above the industrialization.
The ultimate principle of VPOW (vacuum packaging on wafer) is to utilize the saturating infrared physical characteristics of silicon chip, plating infrared anti-reflection film and handle on silicon chip at first in conjunction with the edge metal of monolithic, by the comparatively mature technology of microelectronic wafer level encapsulation, realize the encapsulation of photoelectricity infrared device on the microelectronic technique line.Finish the infrared device high permeability, vacuum life is long, integrated level height, miniaturization, packaging and testing requirement cheaply.
Tradition uncooled ir Vacuum Package adopts the Can or the ceramic cartridge of low leak rate, this shell (be generally and can cut down material) needs the glass insulation paper PROCESS FOR TREATMENT of pin, the silver-bearing copper welding of exhaust tube (oxygen-free high conductivity type copper), general pin needs gold-plated, and can cut down because corrosion easily needs nickel plating.Inner NTC and TEC formation temperature control closed loop, the temperature the during work of control focal plane.Complex structure, technology is loaded down with trivial details, and cost is very high.
Summary of the invention
Problem to be solved by this invention is: packaging technology and packaging system that how a kind of device of non-refrigerated infrared focal plane array is provided, this packaging technology and packaging system and conventional package method such as Metal Packaging and ceramic package specific energy mutually effectively reduce the cost of device of non-refrigerated infrared focal plane array in packaging and testing, remedy the defective of the technical no temperature control function of UPOC, and possessed all functions of conventional package.
Technical matters proposed by the invention is to solve like this: the packaging system that a kind of device of non-refrigerated infrared focal plane array is provided, it is characterized in that, comprise body and capping, described body and capping cooperating, both compress through heating and are packaged as a whole in vacuum chamber, wherein:
1. body comprises first substrate, be provided with the heavily doped region of P, N characteristic on the surface of substrate, in the middle of substrate, be provided with the strip metal frame, top in the strip metal frame region is provided with the sensing circuit zone, the below is provided with the focal plane array column region, and the heavily doped region area is greater than the focal plane array column region, and the focal plane array column region has M * N unit, between strip metal figure and edges of substrate, be provided with some bond pad, be provided with some reference resistance at the focal plane array column region;
2. capping comprises second substrate, all is provided with diamond-film-like in the both sides of second substrate, either side be provided with body in the corresponding capping metal edge frame of strip metal frame, and the capping metal edge frame is provided with brazing metal.
Packaging system according to device of non-refrigerated infrared focal plane array provided by the present invention is characterized in that, the described side that is provided with metal edge frame that is sealed on is provided with the film like getter, and this film like getter is worked as temperature and is heated to a certain degree and will be activated.
Packaging system according to device of non-refrigerated infrared focal plane array provided by the present invention is characterized in that, described brazing metal is the indium tin solder.
A kind of packaging technology of device of non-refrigerated infrared focal plane array is characterized in that, may further comprise the steps:
1. prepare body:
The preparation of a, semiconductor cooler: the heavily doped region for preparing P, N characteristic in first surface of silicon, this heavily doped region area is greater than the focal plane array column region, utilize the reflection horizon metal of focal plane arrays (FPA) itself to do electrode then, realize that P, N the two poles of the earth connect, adopting photoetching process to cut off the connection of reflection horizon metal, form a complete semiconductor cooler in the position of corresponding focal plane arrays (FPA) edges of regions;
The preparation of b, negative temperature coefficient sensor: the reference cell itself based on the micrometering kampometer is exactly a negative temperature coefficient sensor, only need be in making the focal plane device process, draw two inferior solder joints, this negative temperature coefficient sensor just can detect underlayer temperature.
The preparation of c, metal edge frame: behind precipitation reflection horizon, a side that has prepared semiconductor cooler on the silicon substrate and passivation layer, at preparation one deck transition bed, preparation layer of metal layer on transition bed, prepare a shaped as frame photoresist in the zone between focal plane array column region, sensing circuit zone and silicon substrate edge then, sacrifice transition bed and metal level except that the photoresist position is set afterwards, removing photoresist, form metal edge frame, the thickness of metal edge frame is greater than the thickness of focal plane arrays (FPA)
The setting of d, bond pad: several bond pad are set in position between metal edge frame and silicon substrate edge;
2. prepare capping:
The preparation of a, capping metal edge frame: select and the second corresponding silicon substrate of first silicon substrate size, at silicon substrate two sides coating diamond-like film, once prepare transition bed and metal level then, on metal level, be provided with and the corresponding photoresist of base metal frame, sacrifice then to remove the metal level of photoresist with external position is set, remove photoresist again, form the capping metal edge frame, and brazing metal is set on metal edge frame;
The preparation of b, getter: prepare the film getter at the capping metal edge frame, this film getter that the position is set is not corresponding with the focal plane array column region;
The preparation of c, anti-reflection film: the both sides in capping prepare anti-reflection film, and this anti-reflection film is the cover film getter not;
3. integral sealing:
At first vacuum chamber is put in the body and the capping that prepare, body and capping are clamped along metal edge frame, heat by heating plate up and down brazing metal is melted, and activate the film getter, finish encapsulation process.
Beneficial effect of the present invention: the present invention has utilized the characteristic of infrared focus plane reference resistance, draw replacement NTC function by bonding, TEC then adopts the P of traditional microelectronic technique on power device, the N ion implantation technology successfully realizes P, the coupling of N knot is right, thereby realize TEC (semiconductor cooler) function, comparing with ceramic package with Metal Packaging is a kind of comparatively economic method for packing, and remedied the defective that the uPOC technology does not have temperature control (lacking TEC and NTC) function, in conjunction with distinctive infrared anti-reflection film, diamond like carbon membrane technology and silicon chip metal welding techniques successfully solve the novel encapsulated technical scheme of uncooled ir encapsulation.This technology can effectively reduce the cost of this product on packaging and testing after the non-refrigerating infrared focal plane volume production, and possesses all functions of conventional package.
This programme in conjunction with and expanded the achievement of association area, introduced and integrated the technology of this forefront, field, remedied the deficiency of part infrared focus plane encapsulation scheme, realized comparatively comprehensively infrared focus plane encapsulation scheme.
Description of drawings
Fig. 1 is the non-refrigerating infrared focal plane device body of novel encapsulated and the structural representation of capping;
Fig. 2 Thermal Electric Cooler (TEC) principle of work and structural representation;
The manufacture craft process flow diagram of Fig. 3 semiconductor cooler;
Technological process and structure diagram that the encapsulation of Fig. 4 infrared focus plane body is prepared;
Technological process and structure diagram that Fig. 5 infrared focus plane capping encapsulation is prepared;
The structural representation of Fig. 6 integral sealing.
Wherein, 1, the focal plane array column region, 2, sensing circuit, 3, brazing metal zone, 4, film getter, 5, the strip metal figure, 6, bond pad, 7, reference resistance, 8, n+ doped region, 9, the p+ doped region, 10, the reflection horizon metal, 11, photoresist, 12, upper layer film such as passivation layer system, 13, transition bed, 14, photoresist, 15, diamond-film-like, 16, silicon substrate, 17, diamond-film-like, 18, transition bed, 19, metal level, 20, photoresist.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described:
At first just like the structural representation of the non-refrigerating infrared focal plane of Fig. 1 (a), at the focal plane array column region M * N unit arranged, focal plane array column region 1 is positioned at the below, the top is sensing circuit zone 2, strip metal 5 figures are positioned near the scuncheon place, and bond pad 6 is between metallic pattern and edge, and most focal planes as shown in the figure, the both sides reference resistance 7 that all can distribute, the usefulness of the resistance contrast of differential signal.Fig. 1 (b) is the distribution of capping, is brazing metal zone 3 in the cover rim inboard, and the top is coated with film like getter 4, and this getter is worked as temperature and is heated to a certain degree and will be activated.Note when capping covers after, the overlay area of getter can not with the focal plane arrays (FPA) area coincidence, otherwise, infraredly can not see through capping arrival focal plane.Body will be set forth below respectively, capping, and the principle of integral sealing technology and flow process.
(1), body preparation
The preparation of body is a most critical in this process, also is comparatively complicated part, mainly comprises semiconductor cooler, negative temperature coefficient sensor, and three aspects of the preparation of weld metal frame in this field of encapsulation.
Semiconductor cooler is the indispensable part of infrared focus plane, and its main effect is exactly to keep the temperature stabilization of focal plane and the homogeneity of Temperature Distribution.Its ultimate principle is to have adopted the peltier effect in the semiconductor, and is as shown in Figure 2, promptly right with the metal connecting sheet galvanic couple that is welded the particle of a N type and P-type semiconductor.When DC current when the N utmost point flows to the P utmost point, both upper ends produce heat absorption phenomenons, this end claims cold junction, the lower end produces exothermic phenomenon, this end claims the hot junction, if direction of current is conversely, then cold and hot end is changed mutually.
At VPOW, technological process as shown in Figure 3,1 among the figure represents the heavily doped region of N characteristic, 2 represent the heavy doping of P characteristic, 10 represent the reflection horizon metallic aluminium, 11 represent photoresist layer, upper layer films such as 12 passivation layers systems, 6 focal planes display.At first, do P characteristic heavy doping 2 in surface of silicon, the heavy doping 8 of N characteristic, the doping area is approximately greater than the focal plane array column region.Then, utilize the reflection horizon metallic aluminium 10 of focal plane itself to do electrode, realize P, the N two-stage is to connecting, and the sputtering technology of metallic aluminium is mainly adopted in the reflection horizon, and the reflection horizon helps infrared signal and absorbs as the reflection cavity bottom of infrared signal.Afterwards, repave photoresist 11 thereon, adopt photoetching process to connect, thereby just formed a complete semiconductor cooler according to the position cut-out metal of Fig. 3 (d).This technology does not influence the preparation technology of focal plane, rear end, and subsequent technique can develop on this basis.
The negative temperature coefficient sensor is the NTC part, can be finished by the reference resistance of a standard, shown in Fig. 1 (a), the reference distribution of resistance is at focal plane array column region two ends, and this resistance can be with variation of temperature, and resistance diminishes, and at normal temperatures, the change in resistance linearity is good, is a desirable NTC.This technology only need go between separately in technology, and bonding is drawn and got final product.
The manufacture craft of metal edge frame has adopted comparatively general sputter, photoetching, and wet-etching technology, its technological process is as shown in Figure 4.8 represent the n+ doped region among Fig. 4, and 9 represent the p+ doped region, and 10 represent reflection horizon and passivation layer etc., and 13 represent transition bed, and 11 represent metal level, 14 photoresists.At first feel secure with NI-G on the upper strata, sputter 500 dusts, next sputter 2um aluminium develop by the photoetching process of standard then, and wet etching, metal frame figure just preparation have been finished.
(2), capping preparation
The preparation of capping and base metal frame are similar, and its technological process as shown in Figure 5.15 represent diamond-film-like among Fig. 5, and 16 represent silicon substrate, and 17 represent diamond-film-like, and 18 represent transition bed, and 19 represent metal level, and 20 represent photoresist, and 3 represent brazing metal, and 4 represent the film getter.At first at silicon substrate both sides coating diamond-like film, the major function of diamond-film-like is to increase silicon chip intensity, and it adopts the method for graphite sputter, and thickness is 1um.Then, still adopt the method for NI-G sputter to prepare transition bed, NI-G thickness still is 500 dusts.Next sputter 2um metallic aluminium obtains metal edge frame through the method identical with base metal frame preparation method on this basis.A relatively more crucial below step, i.e. the coating of indium tin solder, it is good that the indium tin solder has impermeability, and molten point hangs down and waits the welding that is applicable to a little between the thin coat of metal.The method of fusion welding injection is adopted in the coating of indium tin solder, and finishes injection process under nitrogen environment, and so just can guarantee that scolder is expelled in molten state can oxidation in the metal process.
After above technology preparation, capping also needs to carry out last two procedures, it is the preparation of GETTER (getter), getter activates under vacuum environment, can be constantly air-breathing in vacuum chamber after the activation, with balance because the problem that the vacuum life that the inwall gas molecule discharges and the aging minute crack that causes of local scolder brings shortens.The film getter adopts zirconium vanadium iron powder 500 celsius temperature sintering to form, and alloyed powder evenly applies, thickness 50um.Be left the evaporation anti-reflection film at last, the two-sided evaporation of anti-reflection film, material zinc sulphide, temperature generally is controlled between 200～300 degrees centigrade, according to anti-reflection quarter-wave principle, thickness is between 2～3um, and its concrete thickness is decided by the transmitance peak value of selecting.Also can adopt compound film system design to finish this technology.Arrive this, the preparation of capping has just been finished.
(3), integral sealing
After body and capping preparation are finished, promptly enter the integral sealing process, as shown in Figure 6.1 represents anti-reflection film among Fig. 6, and this process need is noted environment control and contraposition.At first all parts that need seal are put into vacuum chamber, vacuum tightness is generally 1E10-5Pa.After the clamping contraposition was good, by up and down heating plate heating, heating Wen Wendu was controlled at 200 degree, and after heating 5 minutes, scolder all melts substantially, was positioned at the top, top and mouthful pressed down, to achieve a butt joint.A top mouthful temperature is controlled at 250 degrees centigrade, and activated degasser compresses about ten minutes time, so that scolder can soak into fully, stops heating at last, and annealing time was controlled at 120 minutes, promptly finished whole encapsulation flow process.
Following specific embodiments of the invention:
A kind of non-refrigerating infrared focal plane device, be made up of 320 * 240 non-refrigerating infrared focal plane unit, each non-refrigerating infrared focal plane unit size is 50um * 50um size, array region size 16mm * 12mm, integrate sensing circuit size 22mm * 25mm, playback mode is the logical mode of column selection.On the make prepare 241 thermistors, P, N injects according to 4mm * 16mm, and 8mm * 16mm specification and be communicated with aluminium lamination, and metallic pattern and chip are homocentric, big or small 18mm * 20mm.Capping area 20mm * 22mm.
Embodiment 2
A kind of no-refrigeration infrared focal plane device, form by 640 * 480 non-refrigerating infrared focal plane unit, each non-refrigerating infrared focal plane unit size is 15um * 15um size, array region size 9.6mm * 7.2mm, integrate sensing circuit size 15mm * 18mm, playback mode is row gating mode.On the make prepare 641 thermistors, P, N injects according to 3.2mm * 7.2mm, and 6.4mm * 7.2mm specification and be communicated with aluminium lamination, intermediate gap 50um, metallic pattern and chip are homocentric, big or small 12mm * 13mm.Capping size 13mm * 16mm.
According to the structure of non-refrigerating infrared focal plane unit, the material of each ingredient and size different can be combined into embodiment like the many types, describe in detail no longer one by one at this.
Claims (4)
1. the packaging system of a device of non-refrigerated infrared focal plane array is characterized in that, comprises body and capping, described body and capping cooperating, and both are packaged as a whole through heating to compress in vacuum chamber, wherein:
1. body comprises first substrate, be provided with the heavily doped region of P, N characteristic on the surface of substrate, in the middle of substrate, be provided with the strip metal frame, top in the strip metal frame region is provided with the sensing circuit zone, the below is provided with the focal plane array column region, and the heavily doped region area is greater than the focal plane array column region, and the focal plane array column region has M * N unit, between strip metal figure and edges of substrate, be provided with some bond pad, be provided with some reference resistance at the focal plane array column region;
2. capping comprises second substrate, all is provided with diamond-film-like in the both sides of second substrate, either side be provided with body in the corresponding capping metal edge frame of strip metal frame, and the capping metal edge frame is provided with brazing metal.
2. the packaging system of device of non-refrigerated infrared focal plane array according to claim 1, it is characterized in that, the described side that is provided with metal edge frame that is sealed on is provided with the film like getter, and this film like getter is worked as temperature and is heated to a certain degree and will be activated.
3. the packaging system of device of non-refrigerated infrared focal plane array according to claim 1 is characterized in that, described brazing metal is the indium tin solder.
4. the packaging technology of a device of non-refrigerated infrared focal plane array is characterized in that, may further comprise the steps:
1. prepare body:
The preparation of a, semiconductor cooler: the heavily doped region for preparing P, N characteristic in first surface of silicon, this heavily doped region area is greater than the focal plane array column region, utilize the reflection horizon metal of focal plane arrays (FPA) itself to do electrode then, realize that P, N the two poles of the earth connect, adopting photoetching process to cut off the connection of reflection horizon metal, form a complete semiconductor cooler in the position of corresponding focal plane arrays (FPA) edges of regions;
The preparation of b, negative temperature coefficient sensor: in making the focal plane device process, draw two inferior solder joints;
The preparation of c, metal edge frame: behind precipitation reflection horizon, a side that has prepared semiconductor cooler on the silicon substrate and passivation layer, at preparation one deck transition bed, preparation layer of metal layer on transition bed, prepare a shaped as frame photoresist in the zone between focal plane array column region, sensing circuit zone and silicon substrate edge then, sacrifice transition bed and metal level except that the photoresist position is set afterwards, removing photoresist, form metal edge frame, the thickness of metal edge frame is greater than the thickness of focal plane arrays (FPA)
The setting of d, bond pad: several bond pad are set in position between metal edge frame and silicon substrate edge;
2. prepare capping:
The preparation of a, capping metal edge frame: select and the second corresponding silicon substrate of first silicon substrate size, at silicon substrate two sides coating diamond-like film, once prepare transition bed and metal level then, on metal level, be provided with and the corresponding photoresist of base metal frame, sacrifice then to remove the metal level of photoresist with external position is set, remove photoresist again, form the capping metal edge frame, and brazing metal is set on metal edge frame;
The preparation of b, getter: prepare the film getter at the capping metal edge frame, this film getter that the position is set is not corresponding with the focal plane array column region;
The preparation of c, anti-reflection film: the both sides in capping prepare anti-reflection film, and this anti-reflection film is the cover film getter not;
3. integral sealing:
At first vacuum chamber is put in the body and the capping that prepare, body and capping are clamped along metal edge frame, heat by heating plate up and down brazing metal is melted, and activate the film getter, finish encapsulation process.
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| CN102351141A (en) * | 2011-11-01 | 2012-02-15 | 北京大学 | Wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components |
| CN102610619A (en) * | 2012-03-29 | 2012-07-25 | 江苏物联网研究发展中心 | Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same |
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| CN102610619A (en) * | 2012-03-29 | 2012-07-25 | 江苏物联网研究发展中心 | Wafer-level vacuum encapsulated infrared focal plane array (IRFPA) device and method for producing same |
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| CN108467005A (en) * | 2017-02-09 | 2018-08-31 | 英飞凌科技股份有限公司 | Semiconductor device and the method for being used to form semiconductor device |
| CN108467005B (en) * | 2017-02-09 | 2023-02-21 | 英飞凌科技股份有限公司 | Semiconductor device and method for forming semiconductor device |
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| CN109935534B (en) * | 2017-12-19 | 2024-01-09 | 昆山万盛电子有限公司 | Short-wave infrared heating type powder encapsulation machine and heating control method |
| CN113140474A (en) * | 2021-04-13 | 2021-07-20 | 安徽光智科技有限公司 | Preparation method of cap wafer for wafer-level packaging |
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