CN103224218A - Encapsulation method of MEMS device - Google Patents
Encapsulation method of MEMS device Download PDFInfo
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- CN103224218A CN103224218A CN2013101271627A CN201310127162A CN103224218A CN 103224218 A CN103224218 A CN 103224218A CN 2013101271627 A CN2013101271627 A CN 2013101271627A CN 201310127162 A CN201310127162 A CN 201310127162A CN 103224218 A CN103224218 A CN 103224218A
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Abstract
The invention discloses an encapsulation method of an MEMS (micro-electro-mechanical systems) device. The method includes: S1. attaching graphical transitional metallization layers and brazing filler metal layers symmetrically on the inner surfaces of a frame substrate and a close cover; S2. attaching a graphical self-propagating multilayer film on the filler metal layer of the frame substrate; S3. fixing a chip on the frame substrate through bonding to realize signal interconnection; S4. subjecting the frame substrate fixed with the chip and the close cover to degassing and dehumidification treatments, then conducting aligning and stacking so as to form an encapsulation structure; and S5. applying a pressure on the encapsulation structure and carrying out preheating, then igniting the self-propagating multilayer film, which burns and melts the filler metal layers so as to realize metallurgical interconnection. In the invention, the close cover and the frame substrate are directly bonded, the production process and the structure are simplified, and the cost is reduced. In a welding process, the self-propagating burning reaction has no influence on the encapsulation internal vacuum degree. During reaction, the temperature rises and drops rapidly, and the heat affected zone is small. When the filler metal layers melt to complete bonding, the chip and the close cover are not influenced by heat, so that the device reliability is improved and the working life is prolonged.
Description
Technical field
The invention belongs to the microelectronic packaging technology field, more specifically, relate to a kind of MEMS (Micro-Electro-Mechanical Systems, MEMS) method for packing of device.
Background technology
Along with large scale integrated circuit improves day by day in the status in military and civilian field, the MEMS device has obtained extensive use at industry-by-industry.At present, high-performance MEMS device such as optical pickocff, Infrared Detectors etc. all require to carry out Vacuum Package usually, to reduce energy consumption or to improve performance.Simultaneously, in the course of the work, the reliability of its encapsulation has directly determined the performance and the service life of MEMS device, and therefore, the application of MEMS device has proposed requirement to the reliability of encapsulation.
The MEMS preparation of devices generally adopts wafer-level package technology, and main technique comprises the steps: that (1) makes the MEMS chip structure on wafer, and wafer is carried out scribing; (2) bare chip that scribing is obtained is fixed on the framework, and links to each other with pin by lead-in wire bonding mode; (3) metal, ceramic capping or shell are connected on the framework by bonding, thermocompression bonding and other welding procedures, finish MEMS device integral manufacturing and encapsulation.
There are the following problems for this traditional packaging technology: the first, there are differences between the material hot propertys such as thermal coefficient of expansion or thermal capacitance, and in welding temperature after the match, particularly in the dissimilar materials interconnection, cause interlinking reliability to reduce easily; The second, welding procedure temperature height has shortened the chip life-span even has caused damage to cause and scrap to chip, and limited the application of heat-sensitive material; The 3rd, the welding procedure complexity, the use of metal, ceramic capping or shell causes the MEMS device cost to improve greatly, and poor air-tightness, can't satisfy the requirement of high vacuum encapsulation.Therefore, in order to finish Vacuum Package, and reduce cost, improve reliability and just must the encapsulation technology of MEMS device be optimized.
Summary of the invention
At the defective of prior art, purpose of the present invention provides a kind of method for packing of MEMS device, is intended to solve traditional packaging technology and makes the dissimilar materials interlinking reliability reduce, and welding procedure temperature height has shortened the problem in chip life-span.
The invention provides a kind of method for packing of MEMS device, comprise the steps:
S1: symmetry is adhered to patterned transition metal layer and solder layer on the inner surface of frame base and capping;
S2: on the solder layer of frame base, adhere to patterned from spreading multilayer film;
S3: be fixed on chip bonding on the frame base and realize signal interconnection;
S4: aligned stack forms encapsulating structure after will being fixed with the frame base of chip and capping and carrying out the degasification dehumidification treatments;
S5: it is described from spreading multilayer film that described encapsulating structure is exerted pressure, ignited after the preheating, spreads the multilayer film burning certainly and melt described solder layer to realize metallurgical interconnection.
Further, described transition metal layer obtains by the method for electroplating or depositing, and the material of described transition metal layer is the alloy of chromium-nickel-Jin or the alloy of titanium-nickel-Jin.
Further, describedly be meant that graphically the method by etching or barrier bed realizes the coating with arbitrary graphic structure.
Further, in step S1, also be included in and adhere to anti-reflection film or getter in the described capping.
Further, described anti-reflection film obtains by the method for electroplating, depositing or apply.
Further, in step S2, described is to spread multilayer film coating or preformation matrix certainly by what deposition or sputtering method obtained from spreading multilayer film.
Further, in step S3, realize the fixing of chip and frame base by the mode of consolidating brilliant bonding or flip-chip interconnection; Mode by lead-in wire bonding or flip-chip interconnection realizes signal interconnection.
Further, in step S4, the process conditions of degasification dehumidification treatments comprise: toast 3h-72h down at 100 ℃-200 ℃.
Further, in step S5, the process conditions of preheating comprise: temperature is 50 ℃ to 150 ℃, and pressure is 0.25-1MPa, and the time is more than or equal to 30s.
Further, in step S5, it is described from spreading multilayer film to ignite by electric spark, laser or microwave.
The present invention is applicable to the vacuum of dissimilar materials and antivacuum encapsulation interconnection, can with capping directly and the frame base bonding simplify production technology and structure, greatly reduces production cost.The method for packing of MEMS device and conventional surface attachment process are compatible fully, and simple in structure, easy and simple to handle, package temperature is low, is applicable to the encapsulation of heat-sensitive material.In welding process, the raw material and the product of self-propagating combustion reaction are solid, can not impact the encapsulation internal vacuum; The reaction warming and cooling rate is fast, and the heat affected area is little, and when bonding was finished in the solder layer fusing, chip and capping can not be subjected to heat affecting, have improved the reliability of device, have prolonged working life.
Description of drawings
Fig. 1 is the method for packing realization flow figure of the MEMS device that provides of the embodiment of the invention;
Fig. 2 is the structural representation of the method for packing of the MEMS device that provides of the embodiment of the invention at the infrared detecting chip of vacuum condition enclosed package;
Fig. 3 is the encapsulating structure schematic diagram of acoustic element of method for packing enclosed package under non-vacuum condition of the MEMS device that provides of the embodiment of the invention.
The specific embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The method for packing of MEMS device provided by the invention can be applicable to the encapsulation manufacturing of MEMS device under the vacuum condition; Under cryogenic conditions, finish encapsulation, reduce the reduction of the reliability that causes because of temperature shock and difference in material properties, the life-span of improving Infrared Detectors; Optimize infrared detector structure and technology, remove metal or ceramic cartridge structure, reduce production costs.
The realization flow of the method for packing of MEMS device provided by the invention specifically comprises as shown in Figure 1:
S1: symmetry is adhered to patterned transition metal layer and solder layer on the inner surface of frame base and capping;
S2: on the solder layer of frame base, adhere to patterned from spreading multilayer film;
S3: be fixed on chip bonding on the frame base and realize signal interconnection;
S4: aligned stack forms encapsulating structure after will being fixed with the frame base of chip and capping and carrying out the degasification dehumidification treatments;
S5: to described encapsulating structure exert pressure, after the preheating, it is described from spreading multilayer film to ignite, and spreads the multilayer film burning certainly and melt described solder layer to realize metallurgical interconnection.
In embodiments of the present invention, step S1 is specially: the inner surface in capping adheres to patterned transition metal layer and solder layer successively; Wherein, capping or framework can comprise preformed curved cavity, and capping and frame base can form cavity, and chip is positioned at cavity; The material of transition metal layer can be Cr/Ni/Au or Ti/Ni/Au, and the material of solder layer can be Sn base or other high-temp solders; The transition metal layer can be by electroplating or the method for deposition obtains, and solder layer can be the soldering paste of solder paper tinsel or serigraphy, plating, and the method by etching or barrier bed of graphically being meant realizes coating with arbitrary graphic structure.It is the same that symmetry is adhered to the method for patterned transition metal layer and solder layer on frame base, do not repeat them here.
In embodiments of the present invention, in step S2, spread multilayer film certainly and be that deposition or sputter obtain spreads multilayer film coating or preformation matrix certainly.
In embodiments of the present invention, in step S3, can realize the fixing of chip and frame base by the mode of solid brilliant bonding or flip-chip interconnection; Can realize signal interconnection by the mode of lead-in wire bonding or flip-chip interconnection.
In embodiments of the present invention, in step S4, the process conditions of degasification dehumidification treatments comprise: toast 3h-72h down at 100 ℃-200 ℃.Aligned stack can realize by special anchor clamps or surface mount process.
In embodiments of the present invention, in step S5, by forcing press encapsulating structure is exerted pressure, and carry out preheating and promote solder layer fusion and interface wetting, preheat temperature is 50 ℃ to 150 ℃, and pressure is 0.25-1MPa; Preheating time more than or equal to 30s after, can ignite from spreading multilayer film by electric spark or laser or microwave, spread the multilayer film burning certainly and emit heat and impel that reaction is spontaneous to be carried out and melt solder layer finishing metallurgical the interconnection.
As one embodiment of the present of invention, during at the encapsulation of infrared chip, step S1 need adhere to anti-reflection film or getter in capping.Anti-reflection film can obtain by the method for electroplating, depositing or apply.
The method for packing of MEMS device provided by the invention is applicable to the vacuum of dissimilar materials and antivacuum encapsulation interconnection, can with capping directly and the frame base bonding simplify production technology and structure, greatly reduces production cost.The method for packing of MEMS device and conventional surface attachment process are compatible fully, and simple in structure, easy and simple to handle, package temperature is low, is applicable to the encapsulation of heat-sensitive material.In welding process, the raw material and the product of self-propagating combustion reaction are solid, can not impact the encapsulation internal vacuum; The reaction warming and cooling rate is fast, and the heat affected area is little, and when bonding was finished in the solder layer fusing, chip and capping can not be subjected to heat affecting, have improved the reliability of device, have prolonged working life.
For the method for packing of the MEMS device that the embodiment of the invention provides further is described, also details are as follows in conjunction with the accompanying drawings with instantiation below:
(1) frame base 5 has curved cavity and has signal derived circuit 10, and capping 1 forms airtight cavity with frame base 5.One deck anti-reflection film 6 is adhered in outer surface and the disconnected zone of inner surface in capping 1, and symmetry is adhered to patterned transition metal layer 2 and solder layer 7 on the inner surface of frame base 5 and capping 1.Wherein, inside copper cash and the pad of signal derived circuit 10 for presetting; The material of transition metal layer 2 is titanium/nickel/gold, and the material of solder layer 7 is the AuSn eutectic solder; Anti-reflection film 6 and transition metal layer 2 be by electroplating or the method for deposition obtains, and solder layer 7 is the soldering paste of solder paper tinsel or serigraphy, plating.
(2) by sputter and barrier bed technology on the solder layer 7 of frame base 5 deposition patternization spread multilayer film 3 certainly.
(3) mode of infrared detecting chip 8 with solid brilliant bonding 4 is fixed on the frame base 5, and finishes signal interconnection by lead-in wire bonding 9.
(4) frame base 5 that will be fixed with infrared detecting chip 8 by surface mount process and capping 1 aligned stack and were finished the degasification dehumidifying in 12 hours 150 ℃ of bakings together, put into vacuum chamber afterwards, were evacuated to 10
-5Pa.
(5) exert pressure by forcing press, and carry out preheating promotion solder fusion and wetting, preheat temperature is 100 ℃, and pressure is 0.25MPa.Preheating 1 minute provides electric spark by the 24V dc source, ignites from spreading multilayer film 3, spreads multilayer film 3 burnings certainly and emits heat and impel that reaction is spontaneous to be carried out and melt solder layer 7 finishing metallurgical the interconnection.
In the encapsulation process, the reaction time is lacked (about 5ms) and heat affected area little (about 0.1mm), has finally realized the high reliability low temperature Vacuum Package of Infrared Detectors.
(1) applies one deck solder layer 7 at box type pottery capping 11 bottom silk screens; In the frame base 5, adhering to transition metal layer 2 and solder layer 7 successively with box type pottery capping 11 symmetric positions.Wherein, the material of the solder layer 7 of ceramic capping 11 bottoms is Pb base or Ag base solder, and the solder layer 7 on the frame base 5 is the AuSn solder, can make by the method for solder paper tinsel or serigraphy; Transition metal layer 2 is chromium/nickel/gold plate of electroplating or deposition obtains.
(2) by machining, carry out graphical treatment to spreading multilayer film 3 preformation matrix certainly, and contraposition is placed on the solder layer 7 of frame base 5.
(3) transplant soldered ball 12 to the pad 13 of signal derived circuit 10, the mode of chip 8 with flip-chip interconnection is fixed on the frame base 5, finish signal interconnection with signal derived circuit 10 simultaneously.
(4) will be fixed with the frame base 5 of chip 8 and be stacked, and the degasification dehumidifying was finished in baking in 24 hours under 100 ℃ with spreading the capping 11 of multilayer film 3 and box type pottery certainly.
(5) exert pressure by forcing press, pressure is 1MPa.Ignite from spreading multilayer film 3 by low-power laser, exothermic heat of reaction fusing solder layer 7 is finished the cavity package under the non-vacuum condition.
In the encapsulation process, it is wetting to use different solder layers to improve the interface of pottery and frame base, has overcome the reduction of the reliability that causes because of temperature shock and difference in material properties, has realized the high reliability air-tight packaging of dissimilar materials.
Those skilled in the art will readily understand; the above only is preferred embodiment of the present invention; not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the method for packing of a MEMS device is characterized in that, comprises the steps:
S1: symmetry is adhered to patterned transition metal layer and solder layer on the inner surface of frame base and capping;
S2: on the solder layer of frame base, adhere to patterned from spreading multilayer film;
S3: be fixed on chip bonding on the frame base and realize signal interconnection;
S4: aligned stack forms encapsulating structure after will being fixed with the frame base of chip and capping and carrying out the degasification dehumidification treatments;
S5: it is described from spreading multilayer film that described encapsulating structure is exerted pressure, ignited after the preheating, spreads the multilayer film burning certainly and melt described solder layer to realize metallurgical interconnection.
2. method for packing as claimed in claim 1 is characterized in that, described transition metal layer obtains by the method for electroplating or depositing, and the material of described transition metal layer is the alloy of chromium-nickel-Jin or the alloy of titanium-nickel-Jin.
3. method for packing as claimed in claim 1 is characterized in that, describedly is meant that graphically the method by etching or barrier bed realizes the coating with arbitrary graphic structure.
4. method for packing as claimed in claim 1 is characterized in that, also comprises in step S1: adhere to anti-reflection film or getter in described capping.
5. method for packing as claimed in claim 4 is characterized in that, described anti-reflection film obtains by the method for electroplating, depositing or apply.
6. method for packing as claimed in claim 1 is characterized in that, in step S2, described is to spread multilayer film coating or preformation matrix certainly by what deposition or sputtering method obtained from spreading multilayer film.
7. method for packing as claimed in claim 1 is characterized in that, in step S3, realizes the fixing of chip and frame base by the mode of consolidating brilliant bonding or flip-chip interconnection; Mode by lead-in wire bonding or flip-chip interconnection realizes signal interconnection.
8. method for packing as claimed in claim 1 is characterized in that, in step S4, the process conditions of degasification dehumidification treatments comprise: toast 3h-72h down at 100 ℃-200 ℃.
9. method for packing as claimed in claim 1 is characterized in that, in step S5, the process conditions of preheating comprise: temperature is 50 ℃ to 150 ℃, and pressure is 0.25-1MPa, and the time is more than or equal to 30s.
10. as claim 1 or 9 described method for packing, it is characterized in that in step S5, it is described from spreading multilayer film to ignite by electric spark, laser or microwave.
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| CN201310127162.7A CN103224218B (en) | 2013-04-12 | 2013-04-12 | A kind of method for packing of MEMS |
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| CN201310127162.7A CN103224218B (en) | 2013-04-12 | 2013-04-12 | A kind of method for packing of MEMS |
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| CN103985642A (en) * | 2014-06-03 | 2014-08-13 | 杭州大立微电子有限公司 | Wafer level packaging method and packaging structure |
| CN105268490A (en) * | 2014-06-27 | 2016-01-27 | 华中科技大学 | Microfluidic chip packaging method |
| CN105679687A (en) * | 2016-01-26 | 2016-06-15 | 华中科技大学 | Micro-interconnection method based on self-propagating reaction |
| CN107473177A (en) * | 2017-07-14 | 2017-12-15 | 华中科技大学 | A kind of preparation method of 3D solids micro-nano structure |
| CN107833838A (en) * | 2017-11-22 | 2018-03-23 | 华进半导体封装先导技术研发中心有限公司 | The high reliability packaging structure and its manufacture method of a kind of air-tightness device |
| CN112670190A (en) * | 2020-12-24 | 2021-04-16 | 湖北工业大学 | Solid-phase bonding connection method |
| CN112840465A (en) * | 2018-09-26 | 2021-05-25 | 依格耐特有限公司 | MEMS package |
| CN114823364A (en) * | 2021-04-19 | 2022-07-29 | 江苏博睿光电股份有限公司 | Airtight packaging method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105679687A (en) * | 2016-01-26 | 2016-06-15 | 华中科技大学 | Micro-interconnection method based on self-propagating reaction |
| CN107473177A (en) * | 2017-07-14 | 2017-12-15 | 华中科技大学 | A kind of preparation method of 3D solids micro-nano structure |
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| CN112840465A (en) * | 2018-09-26 | 2021-05-25 | 依格耐特有限公司 | MEMS package |
| CN112670190A (en) * | 2020-12-24 | 2021-04-16 | 湖北工业大学 | Solid-phase bonding connection method |
| CN114823364A (en) * | 2021-04-19 | 2022-07-29 | 江苏博睿光电股份有限公司 | Airtight packaging method |
| CN114823364B (en) * | 2021-04-19 | 2023-10-13 | 江苏博睿光电股份有限公司 | Airtight packaging method |
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