CN102351141A - Wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components - Google Patents
Wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components Download PDFInfo
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Abstract
The invention aims at providing a wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components. The wafer level vacuum encapsulated components mainly comprise the MEMS components, a base substrate of a support component, a middle cushion layer substrate with via holes, a nut cap substrate, soldering flux and getter. The encapsulating method comprises the following basic steps of: preparing the MEMS components on the base substrate; precipitating a composite metal layer respectively on the component side of the base substrate, two sides of the middle cushion layer substrate and one side of the nut cap substrate to form bonded area graphics; sputtering getter alloy to be used as the getter on any one substrate; machining the middle cushion layer substrate to form the via holes; aligning and combining the three substrates in sequence and sandwiching the soldering flux among the substrates; putting the substrates into a bonding furnace, thereby forming a sealed cavity after the soldering flux is molten for bonding the three substrates together; and scribing to form single components. The wafer level encapsulating method can improve the sealing properties of the inner and outer environments of encapsulation and the reliability of the encapsulated components, has high yield, simple process and low cost, and is suitable for industrial mass production.
Description
Technical field
The present invention relates to a kind of method for packing of MEMS device, particularly about a kind of wafer-grade vacuum encapsulation method of MEMS device.
Background technology
Being encapsulated in and occupying important status in the MEMS, is one step of key of device ability practical application.In the cost of MEMS product, packaging cost accounts for 50%-80% greatly.At present, the encapsulation technology of MEMS device has been inherited the packaging technology of integrated circuit mostly.Though the encapsulation technology of integrated circuit is ripe, reliable, face new problem and challenge simultaneously.The MEMS device is packaged with the characteristics of the following IC of being different from encapsulation: the diversity of detection and input signal, like multiple signal and multiple mixed signals such as power, heat, light, electricity, magnetic, chemistry, biologies; Three-dimensional microstructures and movable structure are very easily impaired, and need enough encapsulated spaces; High-air-tightness and high vacuum, some devices need be worked under high-air-tightness and vacuum, and this just need accomplish high-air-tightness and high vacuum encapsulation when encapsulation; It is special that the shell of encapsulation requires, because MEMS device working environment is special and various, encapsulation needs to protect the MEMS device, does not influence the transmission of signal again; High reliability request, the MEMS device application is extensive, needs good reliability, could guarantee its normal use
The advantage of wafer level packaging comprises: wafer level packaging is encapsulation back scribing earlier, has avoided the problems such as pollution and micro-structural damage in the scribing processes; The MEMS designs of wafer level packaging and package design can be unified to consider, carry out simultaneously that this will improve design efficiency, reduce design cost; Wafer level packaging from the manufacturing of MEMS device, be encapsulated into the whole process that product accomplishes, intermediate link significantly reduces, the cycle shortens a lot, so just can reduce cost; Utilizing wafer level packaging can on disk, realize the packaging and testing of device, is the encapsulation technology of batch process device truly
The MEMS packaging technology mainly adopts bonding techniques.Bonding techniques is meant the method that silicon chip and silicon chip, silicon chip and glass or other material is closely combined through chemistry and physical action, and the anode linkages such as anode linkage and eutectic bonding that comprise commonly used are claimed electrostatic bonding again.It can with glass and metal, alloy or bonding semiconductor together and need not this bonding temperature of any binding agent relatively low, bonded interface is firm, long-time stability good; But need making alive to form high electric field, can influence the movable microstructure and the performance of device.Eutectic bonding is the eutectic temperature bonding that utilizes storeroom, when material therefor reaches with the silicon chip eutectic temperature, will form alloy with silicon and reach the bonding purpose.Eutectic bonding material commonly used is Au, but it costs an arm and a leg, and eutectic temperature is about more than 600 ℃.
Solder technology (soft soldering) be important technology and the scope of application in the microelectronics Packaging extensively in order to obtain desirable welding, the selection of scolder is most important.The solderability of scolder, fusing point, intensity and Young's modulus, thermal coefficient of expansion, heat fatigue, creep and creep-resistant property etc. all can influence the quality of welding.The characteristics of solder are that the fusing point of used scolder is lower than 300 ℃.
Summary of the invention
The device of this wafer level Vacuum Package of method that the purpose of this invention is to provide a kind of wafer level Vacuum Package of MEMS device mainly comprises the MEMS device, supports middle the bed course substrate of the base substrate of MEMS device, band via hole, block a shot substrate, scolder and getter.The encapsulation basic step comprises: the MEMS device of on base substrate, preparing needs; At two faces of the device side of base substrate, middle bed course substrate and one side deposit one deck complex metal layer of block substrate, and form the bonding regional graphics, this complex metal layer is as the welding intermediate layer, when realizing adhering to also as the air-tightness barrier layer; The sputter getter alloy is as getter on block or middle bed course or base substrate; The bed course substrate forms via hole in the middle of adding; Base substrate, middle bed course substrate, block substrate are aimed in order and combined, and between base substrate and middle bed course substrate, middle bed course substrate and block substrate, sandwich certain thickness scolder; Assembling device is put into the bonding stove with certain vacuum degree, and scolder fusion under uniform temperature and pressure is bonded together base substrate, middle bed course substrate, block substrate, forms the device sealing chamber; Scribing forms the sealing property that this wafer-level encapsulation method of individual devices can improve the encapsulation internal and external environment, and the reliability of packaging and yield rate are high, and technology is simple, cost is low, is applicable to industrial mass production.
Said MEMS device can be MEMS devices such as gyro, accelerometer, pressure gauge, infrared focal plane array.
Said base substrate is the substrate that supports the MEME device, can be that diameter is circular substrates such as the silicon chip, quartz plate, sapphire, pottery of specifications such as 4 cun, 8 cun and 12 cun, also can be the substrate of other specification and size
The bed course substrate can be and the circle of base substrate same size or the substrate of other shape in the middle of said; Size and base substrate are basic identical; Material can be materials such as pottery, glass, quartz, silicon chip, and thickness is selected 500nm-1mm according to the requirement of packaging.
The bed course via hole can be square a, circle etc. in the middle of said, and size is corresponding with the MEMS device size, can adopt processes such as laser scribing, dry etching, wet etching.
Said block substrate can be and the glass of base substrate same size, quartz plate, potsherd etc.; Can on the contact-making surface of said block substrate and middle bed course, process the groove of certain depth; Shape and middle bed course via hole basically identical form the annular seal space of MEMS device jointly with middle bed course.
Said complex metal layer can be a polytype, like Cr/Cu, and Cr/Au, Cr/Ni/Au, Ti/Ni/Au, Cr ' Ni ' Cu Ag etc., bottom wherein is an adhesion layer, realizes the adhesion of intermediate layer and substrate; The intermediate layer is the barrier layer, prevents that top-level metallic from diffusing into substrate, and top-level metallic is an adhesion layer, realize with scolder melt soldering altogether.Said composition metal layer thickness is at 100mm-10 μ m.
Said scolder can be multiple solder, like Sn-Pb, and Sn-In, Sn-Ag, Sn-Au, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Cu, Sn-Ag-In, Sn-Ag-Sb, scolders such as Sn-Cu-Ni are selected according to the composition metal layer material.Said scolder generally is processed into the sheet of thickness at 5 μ m-100 μ m, size and the size basically identical that is bonded the zone
Said getter can be selected nonevaporable getter (NEG), like zirconium (Zr) alloy, zirconium alloy, Ti-Mo, Ii-Zr-V, Zr-V-Fc, Nano getter etc.
The vacuum of said bonding stove should be higher than device and encapsulate required vacuum, and temperature required and pressure should be able to make scolder and complex metal layer be fused together.
The preparation method of the wafer level Vacuum Package of MEMS device of the present invention comprises following procedure of processing:
1) processing of completion MEMS device on base substrate; On base substrate, accomplish the deposit of encapsulation in the processing device with complex metal layer; Photoetching and corrosion or stripping metal form the bonding metallic pattern, so as in the minimizing following process to the influence of MEMS device performance;
2) at the two sides of middle bed course substrate deposit complex metal layer, photoetching and corroding metal form the bonding metallic pattern, and graphics shape is consistent with base substrate; The technology of above-mentioned corroding metal also can adopt stripping technology to realize that graphics shape is consistent with base substrate;
3) at the one side deposit complex metal layer of block substrate, photoetching and corroding metal form the bonding metallic pattern; The technology of above-mentioned corroding metal also can adopt stripping technology to realize that graphics shape is consistent with base substrate;
4) form via hole at middle bed course substrate, can directly adopt metal level is mask, and bed course forms via structure until break-through in the middle of wet etching or the dry etching.Can also use laser cutting technique to form via structure, need protect substrate before the cut, stain the bonding complex metal layer to prevent damage;
5) make the getter figure at block by lithography on the substrate, the sputter getter material adopts stripping technology to accomplish the making of getter figure, also can first deposit getter material, and the photoetching post-etching forms the technology of getter figure;
6) sequence alignment of pressing base substrate, middle bed course substrate and block substrate makes up three substrates; The sheet scolder is pressed the cutting of bonding region shape; Be clipped in base substrate and middle bed course substrate; And between middle bed course substrate and the block substrate; Substrate after the combination is put into the stove with certain vacuum degree; More than heated substrate to scolder fusing point under this vacuum environment, accomplish the bonding encapsulation;
7) activated degasser is confirmed activationary temperature according to getter material and device practical application, and activationary temperature is roughly about 400 ℃.
8) form individual devices along bonding zone scribing after encapsulation is accomplished.
This technology can be revised encapsulation process, encapsulation according to actual needs with material, package dimension etc.
The present invention has the following advantages owing to take above technical scheme:
1, package temperature is low, and therefore the fusing point of scolder can realize the wafer level Vacuum Package of MEMS device generally below 300 ℃ under the situation of lower temperature.
2, technology is simple, and cost is low, and bonding technology only needs 2 reticle, and 3 photoetching realize, and does not need additional processing shell, the special bonding apparatus of use as conventional package technology, has reduced processing cost.
3, good reliability, this packaging technology do not need as anode linkage technology, to apply high voltage, do not need temperature high as gold silicon melts bonding technology altogether, can not damage device, adopt intermediate solder can significantly improve the reliability of encapsulation.
4, applied widely, this encapsulation technology is except that being applicable to the MEMS device that electricity is read, because the block substrate can be selected printing opacity substrates such as glass, quartz for use, this encapsulation technology also is applicable to the MEMS device that encapsulating optical is read
Description of drawings
Fig. 1 is the structural representation of wafer level Vacuum Package of the present invention;
Fig. 2 is the process chart of wafer level Vacuum Package of the present invention;
Fig. 3 is the engraved structure sketch map of bed course sheet in the middle of the present invention;
Fig. 4 is a weld interface structural representation of the present invention;
The specific embodiment
For making the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that structure of the present invention and preparation method are described in detail below.
Wafer level packaging device as shown in Figure 1, this wafer level Vacuum Package comprise that mainly the base substrate 1 of MEMS device 2, support MEMS device, middle bed course substrate 3, cover plate substrate 4, scolder 8 and the getter 9 encapsulation basic steps of band via hole comprise: the MEMS device of on base substrate, preparing needs; At two faces of the device side of base substrate, middle bed course substrate and one side deposit one deck complex metal layer of block substrate, and form the bonding regional graphics, this complex metal layer is as the welding intermediate layer, when realizing adhering to also as the air-tightness barrier layer; The sputter getter alloy is as getter on block or middle bed course or base substrate; The bed course substrate forms via hole in the middle of the processing; Base substrate, middle bed course substrate, block substrate are aimed in order and combined, and between base substrate and middle bed course substrate, middle bed course substrate and block substrate, sandwich certain thickness scolder; Assembling device is put into the bonding stove with certain vacuum degree, and scolder fusion under uniform temperature and pressure is bonded together base substrate, middle bed course substrate, block substrate, forms the device sealing chamber; Scribing forms individual devices.This wafer-level encapsulation method can improve the sealing property of encapsulation internal and external environment, and the reliability of packaging and yield rate are high, and technology is simple, cost is low, is applicable to industrial mass production.
Said MEMS device can be MEMS devices such as gyro, accelerometer, pressure gauge, infrared focal plane array.
Said base substrate is the substrate that supports the MEME device, can be that diameter is circular substrates such as the silicon chip, quartz plate, sapphire, pottery of specifications such as 4 cun, 8 cun and 12 cun, also can be the substrate of other specification and size.
The bed course substrate can be and the circle of base substrate same size or the substrate of other shape in the middle of said; Size and base substrate are basic identical; Material can be materials such as pottery, glass, quartz, silicon chip, and thickness is selected 500nm-1mm according to the requirement of packaging.
The bed course via hole can be square a, circle etc. in the middle of said, and size is corresponding with the MEMS device size, can adopt processes such as laser scribing, dry etching, wet etching.
Said block substrate can be and the glass of base substrate same size, quartz plate, potsherd etc.; Can on the contact-making surface of said block substrate and middle bed course, process the groove of certain depth; Shape and middle bed course via hole basically identical form the annular seal space of MEMS device jointly with middle bed course.
Said complex metal layer can be a polytype, like Cr/Cu, and Cr/Au, Cr/Ni/Au, Ti/Ni/Au, Cr Ni Cu Ag etc., bottom wherein is an adhesion layer, realizes the adhesion of intermediate layer and substrate; The intermediate layer is the barrier layer, prevents that top-level metallic from diffusing into substrate, and top-level metallic is an adhesion layer, realize with scolder melt soldering altogether.Said composition metal layer thickness is at 100nm-10 μ m.
Said scolder can be multiple solder, like Sn-Pb, and Sn-In, Sn-Ag, Sn-Au, Sn-Cu, Sn-Ag-Bi, Sn-Ag-Cu, Sn-Ag-In, Sn-Ag-Sb, scolders such as Sn-Cu-Ni are selected according to the composition metal layer material.Said scolder generally is processed into the sheet of thickness at 5 μ m-100 μ m, size and the size basically identical that is bonded the zone
Can select nonevaporable getter (NEG) in the said getter, like zirconium (Zr) alloy, zirconium alloy, Ti-Mo, Ti-Zr-V, Zr-V-Fc, Nano getter etc.
The vacuum of said bonding stove should be higher than device and encapsulate required vacuum, and temperature required and pressure should be able to be that scolder and complex metal layer are fused together.
A kind of technology of this wafer-grade vacuum encapsulation method package of MEMS infrared focal plane array (FPA) device of employing, Fig. 2 is the preparation flow figure of FPA wafer level Vacuum Package of the present invention, concrete steps are following:
1) on 4 cun silicon chips 1, adopt the MEMS processing technology to accomplish the processing of infrared focal plane array (FPA) 2, like Fig. 2 a;
2) the completion of FPA? 2 while, at the silicon substrate 1 bonded to the metal pattern carved polish, sputtered metal Cr5/Ni6, specifically a thickness of
strip forming a metal pattern as shown in Figure 2b, 2c, 2c is a metal block diagram which top view;
3) with 2) to two throwing silicon chips 3 (front) and sheet glass 4 splash-proofing sputtering metal Cr5/Ni6, peel off the formation metallic pattern, like Fig. 2 d, 2e, wherein 2d is middle bed course sheet sketch map, 2e is the sketch map of diaphragm;
4) two throwing silicon chip 3 front gluings are protected expansion, with 2) photoetching is carried out at two throwing silicon chips 3 back sides, splash-proofing sputtering metal Cr5/Ni6 peels off the formation metallic pattern, like Fig. 2 d;
5) on a silicon wafer, double throw glass wafer 3 and 4 sputtered Au? 7, specific thickness
6) make the figure of Au 7 by lithography, with Metal Cr 5/Ni 6 graphs coincide, corrosion Au forms the top-level metallic figure, like Fig. 2 b, 2d, 2e;
7) make the figure of getter on the sheet glass 4 by lithography, sputter zircaloy 9 is peeled off and is formed the getter figure, like Fig. 2 c as getter;
8) adopt laser cutting technique, will not have plated silicon to cut away, form via structure; To the protection of silicon chip 3 positive and negative gluings, like Fig. 2 f and Fig. 3, wherein Fig. 2 f is hollow out profile and vertical view before the cutting; But Fig. 3 be in the via structure sketch map of wafer level of bed course sheet, 10 is via hole;
9) press the sequence alignment of silicon chip 1, two throwing silicon chip 3 and sheet glass 4, sheet Au-Sn scolder 8 is cut into the bonding region shape, put between each layer, in vacuum furnace, accomplish encapsulation, like Fig. 2 g, weld interface structure and shown in Figure 4;
10) activated degasser, scribing then.
Claims (11)
1. wafer-grade vacuum encapsulation method, the device of this wafer level Vacuum Package mainly comprise the MEMS device, support the base substrate of MEMS device, middle bed course substrate, cover plate substrate, scolder and the getter of band via hole.The encapsulation basic step comprises: the MEMS device of on base substrate, preparing needs; At two faces of the device side of base substrate, middle bed course substrate and one side deposit one deck complex metal layer of block substrate, and form the bonding regional graphics, this complex metal layer is as the welding intermediate layer, when realizing adhering to also as the air-tightness barrier layer; The sputter getter alloy is as getter on block or middle bed course or base substrate; The bed course substrate forms via hole in the middle of the processing: base substrate, middle bed course substrate, block substrate are aimed in order and combined, and between base substrate and middle bed course substrate, middle bed course substrate and block substrate, sandwich certain thickness scolder; Assembling device is put into the bonding stove with certain vacuum degree, and scolder fusion under uniform temperature and pressure is bonded together base substrate, middle bed course substrate, block substrate, forms the device sealing chamber; Scribing forms individual devices.This wafer-level encapsulation method can improve the sealing property of encapsulation internal and external environment, and the reliability of packaging and yield rate are high, and technology is simple, cost is low, is applicable to industrial mass production.
2. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, said MEMS device can be MEMS devices such as gyro, accelerometer, pressure gauge, infrared focal plane array.
3. the method for wafer level Vacuum Package as claimed in claim 1; It is characterized in that; Said base substrate is the substrate that supports the MEMF device; Can be that diameter is circular substrates such as the silicon chip, quartz plate, sapphire, pottery of specifications such as 4 cun, 8 cun and 12 cun, also can be the substrate of other specification and size.
4. the method for wafer level Vacuum Package as claimed in claim 1; It is characterized in that; The bed course substrate can be and the circle of base substrate same size or the substrate of other shape in the middle of said; Size and base substrate are basic identical; Material can be materials such as pottery, glass, quartz, silicon chip, and thickness is selected 500nm-1mm according to the requirement of packaging.
5. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, said in the middle of the bed course via hole can be square, circle etc., size is corresponding with the MEMS device size, can adopt processes such as laser scribing, dry etching, wet etching.
6. the method for wafer level Vacuum Package as claimed in claim 1; It is characterized in that; Said block substrate can be and the glass of base substrate same size, quartz plate, potsherd etc.; Can on the contact-making surface of said block substrate and middle bed course, process the groove of certain depth; Shape and middle bed course via hole basically identical form the annular seal space of MEMS device jointly with middle bed course.
7. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, said complex metal layer can be a polytype, like Cr/Cu; Cr/Au, Cr/Ni/Au, Ti/Ni/Au; Cr/Ni/Cu/Ag etc., bottom wherein is an adhesion layer, realizes the adhesion of intermediate layer and substrate; The intermediate layer is the barrier layer, prevents that top-level metallic from diffusing into substrate, and top-level metallic is an adhesion layer, realize with scolder melt soldering altogether.Said composition metal layer thickness is at 100nm-10 μ m.
8. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, said scolder can be multiple solder; Like Sn-Ph, Sn-ln, Sn-Ag; Sn-Au; Sn-Cu, Sn-Ag-Bi, Sn-Ag-Cu; Sn-Ag-ln; Sn-Ag-Sb, scolders such as Sn-Cu-Ni are selected according to the composition metal layer material.Said scolder generally is processed into the sheet of thickness at 5 μ m-100 μ m, size and the size basically identical that is bonded the zone.
9. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, said getter can be selected nonevaporable getter (NEG), like zirconium (Zr) alloy, zirconium alloy, Ti-Mo, Ti-Zr-V, Zr-V-Fc, Nano getter etc.
10. the method for wafer level Vacuum Package as claimed in claim 1 is characterized in that, the vacuum of said bonding stove should be higher than device and encapsulate required vacuum, and temperature required and pressure should be able to make scolder and complex metal layer be fused together.
11. the preparation method of the wafer level Vacuum Package of a MEMS device of the present invention comprises following procedure of processing:
1) deposit of encapsulation with complex metal layer accomplished in the processing of completion MEMS device on base substrate in the processing device on base substrate, photoetching is also corroded or stripping metal, forms the bonding metallic pattern;
2) at the two sides of middle bed course substrate deposit complex metal layer, photoetching and corroding metal form the bonding metallic pattern, and graphics shape is consistent with base substrate; The technology of above-mentioned corroding metal also can adopt stripping technology to realize;
3) at the one side deposit complex metal layer of block substrate, photoetching and corroding metal form the bonding metallic pattern; The technology of above-mentioned corroding metal also can adopt stripping technology to realize;
4) form via hole at middle bed course substrate, can directly adopt metal level is mask, and bed course forms via structure until break-through in the middle of wet etching or the dry etching.Can also use laser cutting technique to form via structure;
5) make the getter figure at block by lithography on the substrate, the sputter Fe Getter Films Prepared adopts stripping technology to accomplish the making of getter figure, also can first deposit Fe Getter Films Prepared, and the photoetching post-etching forms the technology of getter figure;
6) sequence alignment of pressing base substrate, middle bed course substrate and block substrate makes up three substrates; The sheet scolder is pressed the cutting of bonding region shape; Be clipped in base substrate and middle bed course substrate; And between middle bed course substrate and the block substrate; Substrate after the combination is put into the stove with certain vacuum degree; More than heated substrate to scolder fusing point under the vacuum environment, accomplish the bonding encapsulation;
7) activated degasser is confirmed activationary temperature according to getter material and device practical application.
8) form individual devices along bonding zone scribing after encapsulation is accomplished.
This method can be revised encapsulation process, encapsulation according to actual needs with material, package dimension etc.
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