CN104792420A - Optical readout focal plane array and preparation method thereof - Google Patents
Optical readout focal plane array and preparation method thereof Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
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- B81B3/0081—Thermal properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/38—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids
- G01J5/40—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids using bimaterial elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
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- Spectroscopy & Molecular Physics (AREA)
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Abstract
The invention provides a method for designing and preparing a terahertz and full-band infrared focal plane array on a transparent substrate. The terahertz and full-band infrared focal plane array provided by the invention uses dual-material micro cantilever beams as pixels of the focal plane array and is prepared by a surface sacrificial layer process, and a response signal of the focal plane array is read out by an optical technology. Each dual-material micro cantilever beam is composed of an absorber, deformation legs, thermal isolation legs, a reflective mirror and anchor points, and each dual-material micro cantilever beam is fixedly supported on the substrate by the corresponding anchor points. During detecting and imaging, terahertz and full-band infrared electromagnetic waves are focused on the dual-material micro cantilever beams, the absorbers convert absorbed electromagnetic wave energy into heat energy, the deformation legs make the dual-material micro cantilever beams deflect, an optical detection system reads the deformation and distribution of the dual-material micro cantilever beam array through the transparent substrate, and finally, a data image processing module displays a terahertz and full-band infrared image of a detected object in the form of a light intensity image. The focal plane array provided by the invention can work in multiple bands, and has the outstanding advantages of high sensitivity and resolution, good reliability and uniformity, low cost, simple preparation process, and the like.
Description
Technical field
The invention belongs to Terahertz and all-waveband infrared detection imaging technical field, relate to design and preparation method that light reads formula focal plane arrays (FPA), particularly relate to and a kind ofly utilize MEMS technology to design on a transparent substrate and prepare the method for Terahertz and all-waveband infrared focal plane arrays (FPA).
Background technology
Focal plane arrays (FPA) (FPA-Focal Plane Array) be a kind of electromagnetic wave can be converted into other can the device of read output signal, be mainly used in detection and technical field of imaging.The infrared electromagnetic wave to terahertz wave band all has in dual-use field to be applied very widely.Since World War II, due to the capacity for individual action that it can effectively improve in night and dim environment, infrared eye obtains and develops very rapidly.At present, commercial infrared detection system has been widely used in the fields such as auto industry, environment measuring and security monitoring; In military field, infrared eye is also widely used in night vision, laser warning and guidance etc.In recent years, Terahertz Technology have also been obtained significant progress.The electromagnetic wave of terahertz wave band has much similar character to infrared band electromagnetic wave, but its feature is given prominence to too, its lower photon energy and outstanding bio-compatibility, make it have obvious advantage in the application in the fields such as medical diagnosis, safety check, explosive detection and astronomical sight.
In general, according to its detection principle, Terahertz and infrared eye can be divided into thermal detector and photon type detector.The ultimate principle of thermal detector work is, be absorbed into radio magnetic wave energy and be translated into heat, and being further converted to certain physical quantity that can read, the change of this physical quantity can be generally resistance variations (surveying radiation hot type), change in voltage (thermoelectric pile formula) or mechanical deformation (bi-material microcantilevel formula).Photon type detector is generally prepared by semiconductor material, and incident electromagnetic wave excites electronics to high level, thus produces induction current or causes conductivity variations.Although photon type detector has obvious advantage than thermal detector in response time and sensitivity, because it needs huge Cryo Equipment to carry out restraint speckle, because which limit its application in some business and military field and popularization.Thermal detector is with the obvious advantage in portability and low cost, therefore has wide application prospect.
In recent years, bi-material microcantilevel formula non-refrigerated infrared detector is paid close attention to widely.The focal plane arrays (FPA) pixel of this detector is bi-material microcantilevel.The material that it is differed greatly by two kinds of thermal expansivity is formed, and therefore when variation of ambient temperature, micro-cantilever can bend deformation, and this Bending Deformation can be read by optical pickup system by preparation micro mirror on a cantilever beam, and then realizes detection imaging.Generally have two kinds of methods preparing this bi-material microcantilevel focal plane arrays (FPA), one is silicon substrate surface sacrifice layer process, and another kind is bulk silicon technological.In silicon substrate surface sacrifice layer process, micro-cantilever is produced on a silicon substrate.When detecting, infrared by silicon substrate back surface incident on micro-cantilever type, and it is incident by micro-cantilever face to read visible ray.Because silicon materials have certain absorption to infrared, the infrared absorption efficiency of this detector is reduced, causes device detection sensitivity to reduce.Substrate under micro-cantilever can optionally be removed, to avoid substrate to the absorption of directs ripple by bulk silicon technological.But this technique needs corrosion or etch silicon substrate for a long time, makes the reliability of focal plane arrays (FPA) and uniformity be had a strong impact on, and cost improves.
Another uncooled detector needs the problem solved to be exactly absorption efficiency.At present, bi-material microcantilevel formula focal plane arrays (FPA) mainly uses silicon nitride as absorbing material.The core absorption peak of silicon nitride, at about 10 μm, therefore can realize detection imaging in long wave infrared region, but for shorter or more long-wave band, as shortwave and medium-wave infrared wave band, and terahertz wave band, its absorptivity all significantly declines.Particularly in Terahertz frequency range, current people do not find to have higher absorption rate and the material being applicable to preparing uncooled detector yet.On the other hand, many application need detector to have the detectivity of multi-band or specific band, and this has higher requirement to absorbing material.In recent years, Meta Materials enters into the sight line of researcher.Meta Materials is a kind of artificial material of periodic arrangement, and its electromagnetic property is not decided by the intrinsic properties of material, but is decided by the shape of periodic structure, physical dimension and arrangement mode.Through suitable design, Meta Materials can be used as perfect electromagnetic wave absorbent material, and its absorption peak and bandwidth can design easily and adjust.
Summary of the invention
The object of this invention is to provide and a kind ofly utilize MEMS technology to design on a transparent substrate and prepare the method for Terahertz and all-waveband infrared focal plane arrays (FPA).Terahertz provided by the invention and all-waveband infrared focal plane arrays (FPA) utilize bi-material microcantilevel as the pixel of focal plane arrays (FPA), and adopt optical technology to read the response signal of focal plane arrays (FPA).Described bi-material microcantilevel is formed by absorber, deformation supporting leg, heat isolation supporting leg, mirror surface and anchor point, and is also fixed on a transparent substrate by anchor points support, and described transparent substrates can be the disk materials such as glass, quartz, polymkeric substance.Described focal plane arrays (FPA) adopts surface sacrificial process preparation on a transparent substrate, and sacrificial layer material used can be semiconductor medium material, as monox, or organic material, as polyimide (Polyimide).
Focal plane arrays (FPA) provided by the invention can carry out Terahertz and all-waveband infrared detects and imaging, under can being operated in non-refrigeration environment.When carrying out detection imaging, bi-material microcantilevel is towards being detected object, and reading visible ray passes transparent substrates collimated incident on micro mirror.When the absorption Terahertz of testee and all-waveband infrared electromagnetic wave focus on bi-material microcantilevel, absorber absorbs Terahertz and all-waveband infrared electromagnetic wave and is translated into heat; According to double material effect, when absorber absorption of electromagnetic radiation temperature changes, deformation supporting leg can bend, and bi-material microcantilevel is deflected; Heat isolation supporting leg is used for reducing the heat interchange between substrate and bi-material microcantilevel; Visible ray is collimated on mirror surface through transparent substrates, the visible ray that mirror surface reflection is incident, Systems for optical inspection reads deformation quantity and the distribution of different bi-material microcantilevel, the Terahertz of testee and infrared image is shown in the mode of plot of light intensity picture eventually through data and image processing module.
For achieving the above object, the present invention takes following technical scheme:
Be applied to a focal plane arrays (FPA) for Terahertz and all-waveband infrared detection imaging, comprise the substrate of multiple bi-material microcantilevel and the multiple bi-material microcantilevel of support.The structure of described multiple bi-material microcantilevel is identical with size.Each bi-material microcantilevel comprises an absorber, two deformation supporting legs, two heat isolation supporting leg, two anchor points and mirror surfaces.Described multiple bi-material microcantilevel is clamped on substrate by anchor point, arranges, to improve fill factor, curve factor in solid matter mode.
The substrate of the multiple bi-material microcantilevel of described support is disk material visible ray to high-transmission rate, as glass, piezoid, polymkeric substance etc.When focal plane arrays (FPA) works, reading visible ray can by transparent substrates face collimated incident on mirror surface, make optical pickup system read the deformation quantity of multiple bi-material microcantilevel from substrate side, and it is incident from bi-material microcantilevel face to be detected Terahertz and all-waveband infrared electromagnetic wave.Such design can make electromagnetic wave directly be radiated on absorber, thus improves focal plane arrays (FPA) to electromagnetic absorption efficiency.
Described absorber is the film or the structure that Terahertz and all-waveband infrared electromagnetic radiation energy are converted into heat, described film can be the thin film dielectrics such as silicon nitride, monox material, also can be the films such as Summoning, nano metal, Graphene, and the multiple-layer stacked of these membraneous materials, described absorber also can be Meta Materials absorbing structure.Described absorber connects deformation supporting leg and heat isolation supporting leg, clamped on substrate by anchor point.
Described Meta Materials absorbing structure is by the sandwich structure being positioned at the Meta Materials of top layer, middle dielectric layer and the mirror surface that is positioned at bottom surface and forming.In described Meta Materials absorbing structure, the Meta Materials of top layer and middle dielectric layer can superpose repeatedly mutually, can realize the special absorber such as wide band absorption, multi-band absorption.Described Meta Materials is the second wavelength metallic structure of periodic arrangement, can realize Meta Materials absorbing structure and be coupled with the resonance of incident electromagnetic wave electric field.Described mirror surface is a kind of metallic film incident electromagnetic wave to fine reflex, and its thickness is greater than electromagnetic skin depth, thus eliminates the transmission of incident electromagnetic wave.Incident electromagnetic wave is coupled between top layer Meta Materials and the mirror surface of bottom surface by middle dielectric layer, thus realizes Meta Materials absorbing structure and be coupled with the resonance in incident electromagnetic wave magnetic field.The described material preparing mirror surface and Meta Materials is not limited only to metal, also can be doped semiconductor materials, as silicon or the doped germanium etc. of doping, or metal silicide materials, as cobalt silicide, Titanium silicide or tungsten silicide etc., or metal oxide, as vanadium oxide, or metal nitride, as titanium nitride, or other high conductivity materials, as Graphene, carbon nano-tube etc.The shape, size, arrangement mode, cycle etc. of described second wavelength metallic structure determine by being detected electromagnetic wavelength, and comprise diamond type, " mouth " font, splitting is ring-like, " ten " font, " H " type, and two splitting is ring-like, " Jerusalem cross " type etc.And these structures by the mode such as mutually nested, combination, superposition, can be formed as the absorber such as multi-band or broadband.。Described dielectric layer can be silica-based dielectric material, as silicon nitride or monox, also can be polymkeric substance, as polyimide and Parylene-C (ParyIene-C).Described thickness of dielectric layers can adjust based on the specific inductive capacity of its material itself and metamaterial structure and size, thus the effective dielectric constant of adjustment Meta Materials absorbing structure and equivalent permeability, make the matches impedances of itself and free space, reach the object improving incident electromagnetic wave absorption efficiency.
Described deformation supporting leg differs material large as far as possible by two kinds of thermal expansivity and forms, and layer of material is the semiconductor medium material with less thermal conductivity and thermal expansivity, as silicon nitride, monox etc.; Another layer material is the material of high thermal expansion coefficient, and as metal, polymkeric substance etc., the Thickness Ratio of described bi-material and deformation are propped up leg length and selected to be obtain deformation quantity large as far as possible.Described heat isolation supporting leg only comprises the less semiconductor medium material of thermal conductivity, this semiconductor medium material can be consistent with the material with less thermal conductivity and thermal expansivity of deformation supporting leg, and thickness and the length of described heat isolation supporting leg are selected to be obtain maximum heat-insulating efficiency.Described deformation supporting leg one end is connected to absorber, and the other end is connected to heat isolation supporting leg, and described heat isolation supporting leg one end is connected to deformation supporting leg, and the other end is connected to anchor point.The arrangement mode of described deformation supporting leg and heat isolation supporting leg can have multiple, comprises orthoscopic, broken-line type, dual slope formula and many broken-line types etc.
Described mirror surface is one or more layers metallic film, is positioned at bottom absorber, for reflecting through the reading visible ray of transparent substrates.Described mirror surface can adopt the mirror surface of Meta Materials absorbing structure simultaneously.Described mirror surface also can be that other have other membraneous materials of fine reflex, as cobalt silicide, Titanium silicide or tungsten silicide etc. to visible ray.
The described focal plane arrays (FPA) carrying out Terahertz and all-waveband infrared detection imaging, can adopt any one surface sacrificial process to prepare on a transparent substrate.The material of described sacrifice layer can be semiconductor medium material, can be also polymeric material, as monox, and polyimide etc.Basic preparation technology comprises: prepare sacrifice layer on a transparent substrate, and forms anchor point structure thereon, prepares bi-material microcantilevel array afterwards on sacrifice layer.Finally, carry out dry etching or wet etching sacrifice layer, remove sacrifice layer release bi-material microcantilevel.
One utilizes polyimide as sacrifice layer, Meta Materials absorbing structure as absorber, prepares the method that light reads formula focal plane arrays (FPA) on a glass substrate, comprises the following steps:
1) spin-on polyimide is solidified in transparent glass substrate, forms sacrifice layer;
2) deposit thin layer metallic gold/chromium, wherein chromium is the adhesion layer between gold and dielectric layer, and gold is simultaneously as the mirror surface in visible ray reading mirror surface and Meta Materials absorbing structure;
3) first time photoetching be mask corrosion chromium/gold with photoresist, then using photoresist and chromium/gold jointly as mask, use oxygen plasma etch polyimide sacrificial layer, formation anchor point;
4) second time photoetching be mask corrosion chromium/gold with photoresist, forms the mirror surface in reading visible ray mirror surface and Meta Materials absorbing structure;
5) deposit low stress SiNx, this layer material is for the preparation of the middle dielectric layer had in the Rotating fields of deformation supporting leg of less thermal conductivity and thermal expansivity, heat isolation supporting leg and Meta Materials absorbing structure, and silicon nitride layer thickness needs to meet the performance requirement of deformation supporting leg, heat isolation supporting leg and Meta Materials absorbing structure simultaneously;
6) depositing metal aluminium is as another layer material of deformation supporting leg, and the thickness of aluminium and the Thickness Ratio of silicon nitride should meet bi-material microcantilevel thermal expansion mismatch and produce deformation requirement large as far as possible;
7) third time photoetching be mask corrosion aluminium with photoresist, forms another Rotating fields on deformation supporting leg;
8) after four mask, depositing metal chromium/gold, wherein chromium is the adhesion layer between gold and dielectric layer, adopts the Meta Materials in stripping technology formation Meta Materials absorbing structure;
9) the 5th photoetching using photoresist and aluminium jointly as mask, etch silicon nitride, forms the intermediate medium Rotating fields in absorber, a Rotating fields of deformation supporting leg, heat isolation supporting leg and Meta Materials absorbing structure;
10) oxygen plasma etch polyimide sacrificial layer, release bi-material microcantilevel, forms light and reads formula focal plane arrays (FPA).
For reducing the heat interchange between focal plane arrays (FPA) and air, need focal plane array to carry out Vacuum Package, the vacuum packaging method of described focal plane arrays (FPA) comprises wafer level and chip-scale Vacuum Package.Parts and the material of described wafer-level vacuum package mainly comprise: with the substrate base of multiple bi-material microcantilevel, the Backing layer substrate being with via hole, block substrate, solder and getter.Encapsulation step comprises: on substrate base, prepare multiple bi-material microcantilevel; At one side deposit one deck complex metal layer of the bonding face of substrate base, two faces of Backing layer substrate and block substrate, and form bond area figure, this complex metal layer as welding middle layer, also as impermeability barrier layer while realization adheres to; On block or Backing layer or substrate base, getter is inhaled in sputtering; Processing Backing layer substrate forms via hole; Substrate base, Backing layer substrate, block substrate are aimed in order and combined, and at substrate base and Backing layer substrate, sandwich certain thickness solder between Backing layer substrate and block substrate; The three layers of substrate combined are put into the bonding stove with certain vacuum degree, solder melting under uniform temperature and pressure, make substrate base, Backing layer substrate, block liner adhesive together, form annular seal space; Activated degasser, scribing forms single focal plane arrays (FPA).Described substrate base is the transparent substrates that preparation has focal plane arrays (FPA), can realize visible ray read from its back side.Described block substrate is as being detected electromagnetic incidence window, different according to detected electromagnetic wave, can be the materials such as germanium, silicon or polymkeric substance.Described Backing layer substrate can be the disk such as silicon, glass material, between block substrate and substrate base, for bi-material microcantilevel provides certain vacuum chamber.Described solder can be multiple solder, as golden tin, and slicker solder, indium tin, the solders such as silver-colored tin, described getter can select the metals such as zirconium, titanium, chromium, and other alloy materials etc.
In sum, the present invention proposes a kind of light and read formula Terahertz and all-waveband infrared detection imaging focal plane arrays (FPA) and preparation method thereof, the present invention has following advantage:
1) the present invention changes and traditional prepares bi-material microcantilevel focal plane arrays (FPA) on a silicon substrate, tested electromagnetic wave is from the working method of substrate surface incidence, propose to prepare bi-material microcantilevel focal plane arrays (FPA) on transparent substrates substrate, tested like this electromagnetic wave is incident by bi-material microcantilevel face, and carry out optical read-out from substrate surface, electromagnetic wave can be made so directly to focus on absorber without substrate, drastically increase the absorption efficiency of Terahertz and all-waveband infrared energy, thus improve the sensitivity of focal plane arrays (FPA);
2) focal plane arrays (FPA) that the present invention proposes adopts surface sacrificial process preparation, and compared with preparing focal plane arrays (FPA) with bulk silicon technological, the homogeneity of focal plane arrays (FPA) prepared by sacrifice layer process and reliability obviously promote, and preparation technology is simple, cost is lower;
3) the polyimide sacrificial layer technique that the present invention proposes is a kind of low-temperature growth technique, is applicable to the low cost backing material of the non-refractories such as glass.Adopt oxygen plasma dry etching polyimide release semi-girder simultaneously, therefore avoid because wet etching discharges the bi-material microcantilevel Problem of Failure brought;
4) the present invention use glass and quartz substrate there is good hot isolation characteristic, effectively can reduce the heat transfer by substrate between bi-material microcantilevel;
5) the focal plane arrays (FPA) wafer-grade vacuum encapsulation method of the present invention's proposition, preparation can be utilized to have the transparent substrates of bi-material microcantilevel as visible ray incidence window, another sheet to the transparent block disk of incident electromagnetic wave as electromagnetic wave incident window, adopt soldering tech to realize Vacuum Package, there is low temperature, technique is simple, cost is low, the advantage such as good reliability;
6) focal plane arrays (FPA) that the present invention proposes adopts optical read-out mode, optical pickup system can carry out bulk treatment by focal plane array information, substantially the treatment capacity of information can not be increased when increasing pixel quantity, and compare the focal plane arrays (FPA) of electricity reading, the preparation technology that light reads formula focal plane arrays (FPA) is simple, be easy to the pixel quantity improving array, thus improve the resolution of detector.
Accompanying drawing explanation
Fig. 1 is the focal plane arrays (FPA) perspective view that the present invention proposes;
Fig. 2 is the bi-material microcantilevel plan structure schematic diagram that the present invention proposes;
Fig. 3 is the bi-material microcantilevel cross-sectional view that the present invention proposes;
Fig. 4 A is the plan structure schematic diagram of the Meta Materials absorbing structure that the present invention proposes, and Fig. 4 B is the cross-sectional view of the Meta Materials absorbing structure that the present invention proposes, and Fig. 4 C-4H is other several metamaterial structure schematic diagram;
Fig. 5 is the focal plane arrays (FPA) preparation technology process flow diagram that the present invention proposes;
Fig. 6 is the wafer-level vacuum package schematic diagram of the focal plane arrays (FPA) that the present invention proposes;
Reference numeral identical in accompanying drawing represents identical parts.
Wherein:
101-bi-material microcantilevel; 102-anchor point; 103-substrate; 201-absorber; 202-deformation supporting leg; 203-heat isolation supporting leg;
204-Meta Materials; 205-dielectric layer; 301-mirror surface; 501-sacrifice layer; 601-blocks a shot substrate; 602-Backing layer substrate;
The via hole of 603-Backing layer substrate.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, structure of the present invention and method are described in detail.
Be applied to a focal plane arrays (FPA) for Terahertz and all-waveband infrared detection imaging, as shown in Figure 1, comprise the substrate (103) of multiple bi-material microcantilevel (101) and the multiple bi-material microcantilevel of support.The structure of described multiple bi-material microcantilevel (101) is identical with size, clamped on substrate by anchor point (102).As shown in Fig. 2 A vertical view, described bi-material microcantilevel comprises an absorber (201), two deformation supporting legs (202), two heat isolation supporting leg (203), two anchor points (102) and a mirror surface (301).Described multiple bi-material microcantilevel is arranged in solid matter mode, to improve fill factor, curve factor.
The substrate (103) of the multiple bi-material microcantilevel of described support is disk material visible ray being had to high-transmission rate, as glass, piezoid, polymkeric substance etc.During focal plane arrays (FPA) work, reading visible ray by transparent substrates face collimated incident on bi-material microcantilevel (101), make optical pickup system read the deformation quantity of multiple bi-material microcantilevel from substrate surface, and it is incident from bi-material microcantilevel face to be detected Terahertz and all-waveband infrared electromagnetic wave.Such design can make electromagnetic wave directly be radiated on bi-material microcantilevel (101), thus improves focal plane arrays (FPA) to electromagnetic absorption efficiency.
Described absorber (201) is the film or the structure that Terahertz and all-waveband infrared electromagnetic radiation energy are converted into heat, described film can be the thin film dielectrics such as silicon nitride, monox material, also can be the films such as Summoning, nano metal, Graphene, and the multiple-layer stacked of these membraneous materials, described absorber also can be Meta Materials absorbing structure.As shown in Figure 2 B, for adopting Meta Materials absorbing structure as the bi-material microcantilevel vertical view of absorber; As shown in Figure 3, for adopting Meta Materials absorbing structure as the bi-material microcantilevel sectional view of absorber.Described absorber (201) connects deformation supporting leg (202) and heat isolation supporting leg (203), clamped on substrate (103) by anchor point (102).
Described Meta Materials absorbing structure, its vertical view and sectional view respectively as shown in Figure 4 A and 4 B shown in FIG., by the sandwich structure being positioned at the Meta Materials (204) of top layer, middle dielectric layer (205) and the mirror surface (301) that is positioned at bottom surface and forming.In described Meta Materials absorbing structure, the Meta Materials (204) of top layer and middle dielectric layer (205) can superpose, repeatedly mutually to realize the special absorption characteristic such as wide band absorption or multi-band absorption.Described Meta Materials (204) is the second wavelength metallic structure of periodic arrangement, can realize Meta Materials absorbing structure and be coupled with the resonance of incident electromagnetic wave electric field.The shape, size, arrangement mode, cycle etc. of described second wavelength metallic structure are determined by the electromagnetic wavelength of detection, diamond type (Fig. 4 A), " mouth " font (Fig. 4 C), splitting ring-like (Fig. 4 D), " ten " font (Fig. 4 E), " H " type (Fig. 4 F), two splitting ring-like (Fig. 4 G), " Jerusalem cross " type (Fig. 4 H) etc.And these structures by the mode such as mutually nested, combination, superposition, can form absorption characteristic as special in multi-band or broadband etc.
Described mirror surface (301) is a kind of metallic film incident electromagnetic wave to fine reflex, and its thickness is greater than electromagnetic skin depth, thus eliminates the transmission of incident electromagnetic wave.Incident electromagnetic wave is coupled by middle dielectric layer (205) between top layer Meta Materials (204) and the mirror surface (301) of bottom surface, thus realizes Meta Materials absorbing structure and be coupled with the resonance in incident electromagnetic wave magnetic field.The material of described mirror surface (301) and Meta Materials (204) is not limited only to metal, also can be doped semiconductor materials, as silicon or the doped germanium etc. of doping, or metal silicide materials, as cobalt silicide, Titanium silicide or tungsten silicide etc., or metal oxide, as vanadium oxide, or metal nitride, as titanium nitride, or other high conductivity materials, as Graphene, carbon nano-tube etc.Described dielectric layer (205) can be silica-based dielectric material, as silicon nitride or monox, also can be polymkeric substance, as polyimide and Parylene-C (Parylene-C).Described dielectric layer (205), its thickness can adjust based on the specific inductive capacity of its material itself and metamaterial structure and size, thus the effective dielectric constant of adjustment Meta Materials absorbing structure and equivalent permeability, make the matches impedances of itself and free space impedance, reach the object improving incident wave absorption efficiency.
Described deformation supporting leg (202) differs material large as far as possible by two kinds of thermal expansivity and forms, and layer of material is the semiconductor medium material with less thermal conductivity and thermal expansivity, as silicon nitride, monox etc.; Another layer material is the material of high thermal expansion coefficient, and as metal, polymkeric substance etc., the Thickness Ratio of described bi-material and deformation supporting leg (202) length are selected to be obtain deformation quantity large as far as possible.Described heat isolation supporting leg (203) only comprises the less semiconductor medium material of thermal conductivity, this semiconductor medium material can be consistent with the layer of material of deformation supporting leg (202), and the thickness of described heat isolation supporting leg (203) and length are selected to be obtain maximum heat-insulating efficiency.Described deformation supporting leg (202) one end is connected to absorber (201), the other end is connected to heat isolation supporting leg (203), described heat isolation supporting leg (203) one end is connected to deformation supporting leg (202), and the other end is connected to anchor point (102).The arrangement mode of described deformation supporting leg (202) and heat isolation supporting leg (203) can have multiple, comprises orthoscopic, broken-line type, dual slope formula and many broken-line types etc.As shown in Figure 2 C, be another kind of broken-line type bi-material microcantilevel structure, it has longer heat isolation supporting leg, can realize better hot isolation characteristic.
Described mirror surface (301) is one or more layers metallic film, is positioned at absorber (102) bottom, for reflecting through the reading visible ray of transparent substrates.Described mirror surface (301) can simultaneously as the mirror surface of Meta Materials absorbing structure.Described mirror surface (301) also can be that other have other membraneous materials of fine reflex, as cobalt silicide, Titanium silicide or tungsten silicide etc. to visible ray.
The described focal plane arrays (FPA) carrying out Terahertz and all-waveband infrared detection imaging, can adopt any one surface sacrificial process to prepare on a transparent substrate.The material of described sacrifice layer (501) can be semiconductor medium material, as monox, also can be or polymeric material, as polyimide etc.Basic preparation technology comprises: in transparent substrates (103), prepare sacrifice layer (501), and forms anchor point (102) structure thereon, afterwards at the multiple bi-material microcantilevel of the upper preparation of sacrifice layer (501).Finally, dry etching or wet etching sacrifice layer, remove sacrifice layer release bi-material microcantilevel (101).
One utilizes polyimide as sacrifice layer, Meta Materials absorbing structure as absorber, and prepare the method that light reads formula focal plane arrays (FPA) on a glass substrate, process chart as shown in Figure 5, comprises the following steps:
1) spin-on polyimide is solidified on transparent glass substrate, and form sacrifice layer (601), section of structure sectional view is as Fig. 6 A;
2) deposit thin layer metallic gold/chromium, wherein chromium is the adhesion layer between gold and dielectric layer, and gold is simultaneously as the reflective mirror material in visible ray reading mirror surface and Meta Materials absorbing structure;
3) first time photoetching be mask corrosion chromium/gold with photoresist, then using photoresist and chromium/gold jointly as mask, use oxygen plasma etch polyimide sacrificial layer, formation anchor point, section of structure is as Fig. 6 B;
4) second time photoetching be mask corrosion chromium/gold with photoresist, the mirror surface in formation visible ray reading mirror surface and Meta Materials absorbing structure, section of structure is as Fig. 6 C;
5) deposit low stress SiNx, this layer material is for the preparation of the middle dielectric layer in the ground floor structure of deformation supporting leg, hot isolation supporting leg and Meta Materials absorbing structure, silicon nitride layer thickness needs the performance requirement simultaneously meeting deformation supporting leg, heat isolation supporting leg and Meta Materials absorbing structure, and section of structure is as Fig. 6 D;
6) depositing metal aluminium is as another layer material of deformation supporting leg, and the thickness of aluminium and the Thickness Ratio of silicon nitride should meet bi-material microcantilevel thermal expansion mismatch and produce deformation requirement large as far as possible;
7) third time photoetching be mask corrosion aluminium with photoresist, form another Rotating fields on deformation supporting leg, section of structure is as Fig. 6 E;
8) after four mask, depositing metal chromium/gold, wherein chromium is the adhesion layer between gold and dielectric layer, and adopt stripping technology to form the Meta Materials of the superiors in Meta Materials absorbing structure, section of structure is as Fig. 6 F;
9) the 5th photoetching using photoresist and aluminium jointly as mask, etch silicon nitride, form the intermediate medium Rotating fields in absorber, the ground floor structure of deformation supporting leg, heat isolation supporting leg and Meta Materials absorbing structure, section of structure is as Fig. 6 G;
10) oxygen plasma etch polyimide sacrificial layer, release bi-material microcantilevel, form light and read formula focal plane arrays (FPA), section of structure is as Fig. 6 H.
The method for packing of described focal plane arrays (FPA) comprises wafer level and chip-scale vacuum packaging method, to reduce the heat interchange between focal plane arrays (FPA) and air, as shown in Figure 7.Parts and the material of described wafer-level vacuum package mainly comprise: with the substrate base (103) of multiple bi-material microcantilevel, the Backing layer substrate (602) being with via hole, block substrate (603), solder and getter.Vacuum Package basic step comprises: the bi-material microcantilevel (101) preparing needs on substrate base (103); Two faces of the bonding face in substrate base (103), Backing layer substrate (602) and one side deposit one deck complex metal layer of block substrate (603), and form bond area figure, this complex metal layer as welding middle layer, realization adhere to while also as impermeability barrier layer; At block a shot substrate (603) or Backing layer substrate (602) or substrate base (103) upper sputtering getter alloy as getter; Processing Backing layer (602) substrate forms via hole (603); Substrate base (103), Backing layer substrate (602), block substrate (601) are aimed in order and combined, and at substrate base (103) and Backing layer substrate (602), Backing layer substrate (602) with block a shot between substrate (601) and sandwich certain thickness solder; The three layers of substrate combined are put into the bonding stove with certain vacuum degree, solder melting under uniform temperature and pressure, make substrate base (103), Backing layer substrate (602), block substrate (601) be bonded together, formed annular seal space; Activated degasser, scribing forms single focal plane arrays (FPA).
Described substrate base (103) is the transparent substrates that preparation has focal plane arrays (FPA), can realize visible ray read from its back side.Described block substrate (601), as being detected electromagnetic incidence window, needs being detected electromagnetic wave transparent, different according to detected electromagnetic wave, can be the materials such as germanium, silicon or polymkeric substance.Described Backing layer substrate (602) can be the disk such as silicon, glass material, between block substrate and substrate base, for bi-material microcantilevel provides the vacuum chamber of certain space.Described solder can be multiple solder, as golden tin, and slicker solder, indium tin, the solders such as silver-colored tin, described getter can select the metals such as zirconium, titanium, chromium, and other alloy materials etc.
Claims (12)
1. carry out the focal plane arrays (FPA) that Terahertz and all-waveband infrared detect detection imaging, be made up of multiple structure and measure-alike bi-material microcantilevel and the substrate that supports multiple bi-material microcantilevel, described bi-material microcantilevel is made up of absorber, deformation supporting leg, heat isolation supporting leg, mirror surface and anchor point, bi-material microcantilevel is clamped on substrate by anchor point, the substrate of the multiple bi-material microcantilevel of described support is disk material visible ray to high permeability, as glass, piezoid, polymkeric substance etc., when carrying out Terahertz and all-waveband infrared detection imaging, visible ray is irradiated on mirror surface through transparent substrates, and Terahertz and all-waveband infrared scioptics focus on bi-material microcantilevel, Terahertz and all-waveband infrared Conversion of Energy are heat by absorber, deformation supporting leg makes bi-material microcantilevel deflect, optical pickup system reads deformation quantity and the distribution of multiple bi-material microcantilevel, the Terahertz of testee or infrared image are shown in the mode of plot of light intensity picture finally by data and image processing module, the Terahertz of realize target thing and all-waveband infrared detection imaging.
2. bi-material microcantilevel as claimed in claim 1, it is characterized in that: described absorber is the film or the structure that Terahertz and all-waveband infrared electromagnetic radiation energy are converted into heat, described film or structure can be the semiconductor medium such as silicon nitride, monox membraneous materials, also can be the membraneous materials such as Summoning, nano metal, Graphene, can also be Meta Materials absorbing structure, and the multiple-layer stacked of these films or structure; The requirement of described film or structural thickness demand fulfillment at utmost absorption of electromagnetic radiation.
3. absorber as claimed in claim 2, is characterized in that: described Meta Materials absorbing structure is by the sandwich structure being positioned at the Meta Materials of top layer, middle dielectric layer and the mirror surface that is positioned at bottom surface and forming; In described Meta Materials absorbing structure, the Meta Materials of top layer and middle dielectric layer can superpose, repeatedly mutually to realize multi-band or wide band absorption.
4. Meta Materials absorbing structure as claimed in claim 3, is characterized in that: described Meta Materials is the second wavelength metallic structure of periodic arrangement, being coupled for realizing Meta Materials absorbing structure with the resonance of incident electromagnetic wave; The shape, size, arrangement mode, cycle etc. of described second wavelength metallic structure determine by being detected electromagnetic wavelength, comprise diamond type, " mouth " font, splitting be ring-like, " ten " font, " H " type, two splitting are ring-like, " Jerusalem cross " type etc.; Described second wavelength metallic structure by the mode such as mutually nested, combination, superposition, can form the absorber that multi-band or broadband etc. are special; The material of preparing of described second wavelength metallic structure can be metal, as gold, aluminium, copper etc., also can be silicon or the semiconductor material such as germanium of doping, or metal silicide, as cobalt silicide, Titanium silicide or tungsten silicide etc., or metal oxide, as vanadium oxide etc., can also be metal nitride, as titanium nitride etc., can also be other high conductivity materials, as Graphene, carbon nano-tube etc.
5. Meta Materials absorbing structure as claimed in claim 3, is characterized in that: described mirror surface is a kind of continuous metal film incident electromagnetic wave to fine reflex.The material of described mirror surface also can be doped semiconductor materials, as silicon or the doped germanium of doping, or metal silicide materials, as cobalt silicide, Titanium silicide or tungsten silicide, or metal silicide, as cobalt silicide, Titanium silicide or tungsten silicide etc., or metal oxide, as vanadium oxide etc., it can also be metal nitride, as titanium nitride etc., can also be high conductivity material, as Graphene, carbon nano-tube etc.; The thickness of described catoptron surface layer is greater than the skin depth of incident electromagnetic wave, thus eliminates the transmission of incident electromagnetic wave.
6. Meta Materials absorbing structure as claimed in claim 3, it is characterized in that: described dielectric layer can be silica-based dielectric material, as silicon nitride or monox, also can be polymkeric substance, as polyimide (Polyimide) and Parylene-C (Parylene-C); Described thickness of dielectric layers can adjust based on the specific inductive capacity of its material itself and metamaterial structure and size, thus the effective dielectric constant of adjustment Meta Materials absorbing structure and equivalent permeability, make the matches impedances of itself and free space, reach the object improving incident electromagnetic wave absorption efficiency.
7. bi-material microcantilevel as claimed in claim 1, it is characterized in that: described deformation supporting leg differs material large as far as possible by two kinds of thermal expansivity and forms, layer of material is the semiconductor medium material with less thermal conductivity and thermal expansivity, as silicon nitride, monox etc.; Another layer material is the material of high thermal expansion coefficient, as metal, polymkeric substance etc.; It is obtain deformation quantity large as far as possible that leg length is propped up in the Thickness Ratio of described bi-material and deformation; Described heat isolation supporting leg only comprises the less semiconductor medium material of thermal conductivity, this semiconductor medium material can be consistent with the material with less thermal conductivity and thermal expansivity of deformation supporting leg, and thickness and the length of described heat isolation supporting leg obtain maximum heat-insulating efficiency; Described deformation supporting leg one end is connected to absorber, and the other end is connected to heat isolation supporting leg, and described heat isolation supporting leg one end is connected to deformation supporting leg, and the other end is connected to anchor point; The arrangement mode of described deformation supporting leg and heat isolation supporting leg can have multiple, comprises orthoscopic, broken-line type, dual slope formula and many broken-line types etc.
8. bi-material microcantilevel as claimed in claim 1, is characterized in that: described mirror surface is one or more layers metallic film, is positioned at bottom absorber, for reflecting through the reading visible ray of transparent substrates; Described mirror surface also can be that other have the membraneous material of fine reflex to visible ray, as cobalt silicide, Titanium silicide or tungsten silicide etc.; Described mirror surface can adopt the mirror surface of Meta Materials absorbing structure simultaneously.
9. focal plane arrays (FPA) as claimed in claim 1, is characterized in that: described focal plane arrays (FPA) can use any one surface sacrificial process to prepare on a transparent substrate; Described sacrificial layer material comprises semiconductor medium material and polymeric material, as silicon dioxide, polyimide etc.; Described sacrificial layer material is prepared in transparent substrates by the mode of spin coating or deposit, after preparation forms anchor point on sacrifice layer, prepares bi-material microcantilevel, comprises and prepares absorber, deformation supporting leg, heat isolation supporting leg and mirror surface; Finally, carry out dry etching or wet etching, remove sacrifice layer, make multiple bi-material microcantilevel unsettled, and on a transparent substrate clamped.
10. focal plane arrays (FPA) as claimed in claim 9, one utilizes polyimide as sacrifice layer, and Meta Materials absorbing structure, as absorber, is prepared the method that light reads formula focal plane arrays (FPA) on a glass substrate, comprised the following steps:
(1). spin-on polyimide is on transparent glass substrate and solidify, and forms sacrifice layer;
(2). deposit thin layer metallic gold/chromium, wherein chromium is the adhesion layer between gold and dielectric layer, and gold is simultaneously as the mirror surface in visible ray reading mirror surface and Meta Materials absorbing structure;
(3). first time photoetching be mask corrosion chromium/gold with photoresist, then using photoresist and chromium/gold jointly as mask, use oxygen plasma etch polyimide sacrificial layer, formation anchor point;
(4). second time photoetching be mask corrosion chromium/gold with photoresist, the mirror surface in formation visible ray reading mirror surface and Meta Materials absorbing structure;
(5). the certain thickness low stress SiNx of deposit, this layer material is for the preparation of deformation supporting leg layer and the heat isolation supporting leg with less thermal conductivity and thermal expansivity, and the middle dielectric layer in Meta Materials absorbing structure;
(6). depositing metal aluminium is as another layer material of deformation supporting leg;
(7). third time photoetching be mask corrosion aluminium with photoresist, forms another Rotating fields on deformation supporting leg;
(8). after four mask, depositing metal chromium/gold, wherein chromium is the adhesion layer between gold and dielectric layer, adopts the second wavelength metallic structure in stripping technology formation Meta Materials absorbing structure;
(9). the 5th photoetching using photoresist and aluminium jointly as mask, etch silicon nitride, forms the intermediate medium Rotating fields in absorber, one deck of deformation supporting leg, heat isolation supporting leg and Meta Materials absorbing structure;
(10). oxygen plasma etch polyimide sacrificial layer, release bi-material microcantilevel, forms light and reads formula focal plane arrays (FPA).
11. focal plane arrays (FPA)s as claimed in claim 1, is characterized in that: the method for packing of described focal plane arrays (FPA) comprises wafer level and chip-scale Vacuum Package.Parts and the material of described wafer-level vacuum package comprise: with the substrate base of multiple bi-material microcantilevel, the Backing layer substrate being with via hole, block substrate, solder and getter; Described encapsulation step comprises: the bi-material microcantilevel preparing needs on substrate base; At one side deposit one deck complex metal layer of the bonding face of substrate base, two faces of Backing layer substrate and block substrate, and form bond area figure; Getter prepared by block substrate or Backing layer substrate or substrate base; Processing Backing layer substrate forms via hole; Substrate base, Backing layer substrate, block substrate are aimed in order and combined, and sandwich certain thickness solder between substrate base and Backing layer substrate, between Backing layer substrate and block substrate; The three layers of substrate combined are put into the bonding stove with certain vacuum degree, solder melting under uniform temperature and pressure, make substrate base, Backing layer substrate, block liner adhesive together, form annular seal space; Activated degasser, scribing forms single focal plane arrays (FPA).
12. wafer-level vacuum packages as claimed in claim 11, is characterized in that: described substrate base is the substrate to visible transparent that preparation has focal plane arrays (FPA), as visible ray incidence window; Described block substrate is to being detected the transparent disk material of electromagnetic wave, as being detected electromagnetic incidence window, different according to detected electromagnetic wave, can be the materials such as germanium, silicon or polymkeric substance; Described Backing layer substrate can be the disk such as silicon, glass material; Described solder can be multiple solder, and as golden tin, slicker solder, indium tin, the solders such as silver-colored tin, described getter can select the metals such as zirconium, titanium, chromium, and other alloy materials or getter.
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