CN202924718U - Double-material micro-cantilever and electromagnetic radiation detector - Google Patents
Double-material micro-cantilever and electromagnetic radiation detector Download PDFInfo
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- CN202924718U CN202924718U CN 201220505673 CN201220505673U CN202924718U CN 202924718 U CN202924718 U CN 202924718U CN 201220505673 CN201220505673 CN 201220505673 CN 201220505673 U CN201220505673 U CN 201220505673U CN 202924718 U CN202924718 U CN 202924718U
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Abstract
The utility model provides a double-material micro-cantilever and an electromagnetic radiation detector. The double-material micro-cantilever is arranged on the surface of a substrate, and comprises a micro-cantilever main body, a first stress protrusion block and a heater. The first stress protrusion block is arranged on the surface, close to one side of the substrate, of the micro-cantilever main boy, and the thermal expansivity of the first stress protrusion block is larger than that of the micro-cantilever main body, or the first stress protrusion block is arranged on the surface, far away from one side of the substrate, of the micro-cantilever main body, and the thermal expansivity of the first stress protrusion block is smaller than that of the micro-cantilever main body. The heater is arranged in the micro-cantilever main body. The double-material micro-cantilever and the electromagnetic radiation detector have the advantages that heterogeneity of responsivity and sensitivity between micro-cantilevers is rectified through arrangement of the heater on each micro-cantilever and different heating temperatures independently provided for each micro-cantilever.
Description
Technical field
The utility model belongs to microelectromechanical systems (MEMS) field, relates to a kind of bi-material microcantilevel and electromagnetic radiation detector.
Background technology
The electromagnetic radiation wave spectrum can be divided into a plurality of continuous spectral coverage from the gamma ray to the radio wave according to wavelength or frequency.Human eye can perception visible light wave range (0.4um-0.8um) be one section very narrow in whole electromagnetic spectrum.For the electromagnetic radiation outside visible light, the mankind must utilize various sensors and detector to detect, and can provide many information outside visible images by the detection to these electromagnetic radiation, are to replenish human eye vision is very effective.
The function of electromagnetic radiation detector is receiving electromagnetic radiation, and by radiation-induced certain physics or chemical effect, the radiation that receives is converted to the signal of telecommunication corresponding with radiation intensity.Due to the non-constant width of whole electromagnetic spectrum scope, the radiation of different-waveband and material are done the used time and can be caused different physics, chemical effect, so often need to utilize different detectors to detect to the electromagnetic radiation of different spectral coverage.
Next-door neighbour's visible light wave range and the longer one section electromagnetic radiation (0.8um-1000um) of wavelength is called infrared band utilizes the infra-red radiation of detection of a target object self emission or reflection and the image that forms is called infrared thermal imagery.Infrared Thermography Technology is widely used in various military affairs and civil area.Comprise in the application of military field that infrared reconnaissance and tracking, infrared guidance, night vision are seen and taken aim at, fire control, auxiliary drive etc.At civil area, infrared thermal imagery is widely used in the various aspects such as industrial thermometric, preventive maintenance, safety monitoring, medical diagnosis, building construction detection, water content detection, communications and transportation, scientific research.
Generally can adopt semiconductor photo detector or thermal detector to detect for infra-red radiation.The refrigeration mode photodetector utilizes the low-gap semiconductor manufacturing, need cooling extremely low temperature during work, so volume and weight is relatively large, price comparison is expensive.Thermal detector utilizes the fuel factor work of infra-red radiation, thermal reactor, pyroelectricity and the micro-metering bolometer of comprising commonly used.Thermal detector can be worked at ambient temperature, generally also referred to as the non-refrigeration type Infrared Detectors, has low cost, is easier to the advantages such as portable.
In recent years, a kind of utilization has the micro-cantilever radiation detector that the two materials of different heat expansion coefficient make and is subject to paying close attention to more widely.Its principle is to utilize MEMS technique to make the micro-cantilever of bilayer or plural layers, thermal coefficient of expansion between different thin-film materials has larger difference, so can make micro-cantilever produce deformation because of unequal thermal expansion between two materials after being heated, this effect be commonly referred to as " double material effect " (Bimorph Effect or Bimetallic Effect).One end and the substrate of micro-cantilever are fixed, and the other end can freely-movable.Produce fuel factor after the micro-cantilever radiation-absorbing, and further cause micro-cantilever to produce deformation by double material effect.Its deformation size has certain corresponding relation with the radiation intensity that absorbs, and can obtain the relevant information of incident radiation by the size that detects deformation.
Patent US5844238 discloses a kind of parallel plate capacitor formula infrared sensor that utilizes bi-material microcantilevel to support, the sensor infrared absorption produces temperature rise and causes that further bi-material microcantilevel is bent upwards distortion, this distortion further causes the variation of parallel plate capacitor, can detect the parameters such as infrared intensity of absorption by the variation of Detection capacitance.
Patent CN101561319 B also discloses the similar bi-material microcantilevel condenser type infrared sensor of a kind of and above-mentioned patent US5844238.
Patent US6080988 discloses a kind of image conversion apparatus that utilizes optical mode to detect radiation-induced bi-material microcantilevel deformation, for detection of various electromagnetic radiation.
Patent US6118124A discloses and has utilized micro-cantilever beam sensor and array thereof for detection of the utility model of electromagnetic radiation and nuclear radiation.The radiation that absorbs and certain physics occurs micro-cantilever or chemical effect causes micro-cantilever deformation.The deformation of micro-cantilever can detect with the multiple effects such as optics, pressure drag, frequency, piezoelectricity, electric capacity, tunnelling and method, thereby further detects the parameters such as radiation intensity of absorption.
Patent application US7616425 B2 discloses a kind of heat sensor that utilizes bi-material microcantilevel that condenser type reads to support, and is primarily characterized in that the change of the supporting form aspect of two Material Cantilever Beam.
The disclosed bi-material microcantilevel infrared sensor of patent US7705307 B1 is primarily characterized in that and utilizes the organic polymer that contains nano particle as a kind of material that consists of two material parts.
Patent US7851759 B2 discloses a kind of bi-material microcantilevel that utilizes as the device of infrared imaging, and it is characterized in that utilizing after a pair of infrared absorption respectively up and down, the bi-material microcantilevel of Bending Deformation carries out to visible light the deformation that space phase modulates to detect micro-cantilever.
Patent US8026485 B2 discloses a kind of bi-material microcantilevel infrared sensor, is primarily characterized in that to utilize shitosan (Chitosan) or chitin (Chitin) as infrared absorption layer.
Radiation absorption layer of micro-cantilever beam sensor operated by rotary motion in above-mentioned utility model is used for absorbing the radiation that is detected, thermal insulation structure between sensor and substrate is used for making absorbed radiation be converted to substantially fuel factor, and two material structures are used for producing deformation under the thermal effect of radiation effect.Different and other needs according to the deformation playback mode can arrange respectively the structures such as infrared reflecting layer, upper/lower electrode, piezo-resistance in addition.
The advantages such as the bi-material microcantilevel detector has highly sensitive, and material and technique and CMOS flow process are more compatible, can tolerate higher technological temperature, and implicit costs are low.But, also have following difficult point man-hour in actual adding.
At first, the residual stress in the large and film of the thermal expansion coefficient difference between the different film materials that partly use due to two materials causes the MEMS structure can be due to thermal stress and the larger distortion of residual stress generation after discharging.And should distortion have larger inconsistency between pixel and pixel, cause there are differences at aspects such as responsiveness, sensitivity between each pixel and be further spatial noise or heterogeneity in the image appearance that detects.
Secondly, generally need the height between the reflecting layer on radiation absorption layer and substrate to be set to 1/4th of incident radiation wavelength, strengthen the absorption to radiation to form interference.And the deformation that causes due to stress makes the height of absorbing cavity be difficult to control, and the heterogeneity of stress distribution causes the cavity height between pixel and pixel inconsistent, can further cause the heterogeneity of signal.
The 3rd, because bi-material microcantilevel has higher temperature deformation coefficient, so its deformation also to substrate or ambient temperature sensitive, and follow-up deformation detecting method can't be distinguished deformation or radiation-induced deformation that variation of ambient temperature causes.Above-mentioned shortcoming can produce adverse influence more at the array that is used for the detecting electromagnetic radiation imaging.
For overcoming above-mentioned unfavorable factor, patent US7755049 B2 discloses a kind of micro-cantilever beam sensor device, it is characterized in that micro-cantilever has two-part pair of material structure, one of them two material structure is used for substrate temperature is changed response, another pair material structure is used for the rdaiation response that absorbs, and above-mentioned two two material structures have different thermal response rates.Utilize the devices such as thermoelectricity temperature-difference refrigerating device (TEC) to carry out temperature control to the substrate of detector, thereby sensitivity of micro-cantilever etc. is adjusted.
But the method that above-mentioned utility model provides can not overcome above-mentioned several shortcomings fully.At first, to whole substrate temperature control, its actual effect is that each micro-cantilever has been applied identical temperature by TEC, and its result causes playing to each micro-cantilever the effect of independent adjusting.In addition, the method by the TEC temperature control can not compensate absorptive rate of radiation between inconsistent each micro-cantilever that causes of the static initial position height of micro-cantilever that causes due to residual stress and the difference of sensitivity.
The utility model content
The purpose of this utility model is to provide a kind of bi-material microcantilevel electromagnetic radiation detector, can effectively overcome the inconsistent shortcoming of the static initial position height of micro-cantilever that above-mentioned residual stress causes, reduce the fixed pattern noise that image causes due to heterogeneity.
In order to achieve the above object, the utility model provides a kind of bi-material microcantilevel, is arranged at a substrate surface, comprising: the micro-cantilever main body; The first stress projection, described the first stress projection is arranged on the surface of close substrate one side of micro-cantilever main body, and the thermal coefficient of expansion of described the first stress projection is greater than the thermal coefficient of expansion of described micro-cantilever main body, perhaps described the first stress projection is arranged on the surface away from substrate one side of micro-cantilever main body, and the thermal coefficient of expansion of described the first stress projection is less than the thermal coefficient of expansion of described micro-cantilever main body; Heater, described heater are arranged in the cantilever beam main body, are used for heating described cantilever beam main body and described the first stress projection, and described heater further arranges two pins at least, and described pin is used for connecting with the extraneous electricity that forms.
Optionally, the upper surface of described micro-cantilever further arranges the absorption of electromagnetic radiation layer, and described substrate surface further arranges the ELECTROMAGNETIC RADIATION REFLECTION layer.
Optionally, comprise further between described micro-cantilever and substrate that one stops projection, described to stop that projection is arranged on micro-cantilever free-ended near on the surface of substrate one side; Perhaps describedly stop that projection is arranged on substrate near on the surface of the free-ended side of micro-cantilever.
Optionally, described micro-cantilever surface further arranges one first electrode, and the further correspondence of described substrate surface arranges a second electrode lay, and described the first and second electrodes complement each other to form a Detection capacitance, in order to detect the deformation of described micro-cantilever.
Optionally, further comprise one second stress projection, described the second stress projection is arranged at described micro-cantilever main body near on the surface of substrate one side, and has a distance with the first stress projection, the thermal coefficient of expansion of described the second stress projection is greater than the thermal coefficient of expansion of described micro-cantilever main body, perhaps described the second stress projection is arranged on the surface of described micro-cantilever main body away from substrate one side, and have a distance with the first stress projection, the thermal coefficient of expansion of described the second stress projection is less than the thermal coefficient of expansion of described micro-cantilever main body.
The utility model further provides a kind of electromagnetic radiation detector, comprises substrate, the capping of substrate surface, and limit by substrate and capping a cavity that forms, described cavity comprises a plurality of above-mentioned micro-cantilevers; Described substrate comprises a heating control circuit, and described heating control circuit is connected with described heater electricity.
Optionally, a plurality of micro-cantilevers in described cavity are further with array format.
The utility model has the advantage of, by heater is set on cantilever beam, and by providing separately different heating-up temperatures to each micro-cantilever, heterogeneity to the responsiveness between micro-cantilever and sensitivity is proofreaied and correct, thereby reduce the fixed pattern noise that image causes due to heterogeneity, and further be conducive to improve the dynamic range of detector, will greatly be conducive to improve the performance of bi-material microcantilevel radiation detector.
Description of drawings
The overall structure schematic diagram of the described electromagnetic radiation detector that provides of the utility model specific embodiment is provided accompanying drawing 1A.
Accompanying drawing 1B be in accompanying drawing 1A micro-cantilever (form of the repeated arrangement of M * N) forms the schematic diagram of focal plane arrays (FPA) with two dimension.
Accompanying drawing 2A is the detailed construction schematic diagram of the micro-cantilever in accompanying drawing 1A and 1B.
Accompanying drawing 2B is the detailed construction schematic diagram of the another kind of concrete real formula mode of micro-cantilever in accompanying drawing 1A and 1B.
Accompanying drawing 3 is the implementation step schematic diagrames that adopt the method for detector detecting electromagnetic radiation shown in accompanying drawing 1A and 1B.
Accompanying drawing 4A is the original state schematic diagram of micro-cantilever shown in accompanying drawing 2A.
To be micro-cantilever shown in accompanying drawing 2A retrodeviate schematic diagram from static initial position in heating to accompanying drawing 4B.
Accompanying drawing 5A is the structural representation of another specific embodiment of the described micro-cantilever of the utility model specific embodiment.
Accompanying drawing 5B is the structural representation of another specific embodiment of the described micro-cantilever of the utility model specific embodiment.
The specific embodiment
Above-mentioned basic thought can be realized by multiple multi-form MEMS structure.Below with reference to accompanying drawing, further the specific embodiment of the present utility model is elaborated.
Accompanying drawing 1A is the overall structure schematic diagram of the described electromagnetic radiation detector that provides 20 of this specific embodiment, comprise: substrate 21, capping 30 and micro-cantilever 22, wherein micro-cantilever 22 is utilize that MEMS technique makes unsettled on substrate 20 surfaces, further is arranged in the cavity by substrate 21 and capping 30 restrictions.
The deformation of micro-cantilever 22 is to detect by any one electrical way such as piezoelectricity, pressure drag, capacitance variations, change of frequency, tunneling effect, and substrate 21 generally comprises the various circuit (figure does not clearly draw) that are used for applying the offset signal detection that industry is commonly referred to reading circuit (ROIC).In addition, when by the inner integrated heater of micro-cantilever 22, micro-cantilever being carried out temperature control, substrate 21 especially comprises for the heating control circuit (figure does not clearly draw) that heater is applied the signal of telecommunication.Substrate 21 adopts the semi-conducting materials such as monocrystalline silicon usually.The circuit that comprises is generally by the manufacturing of CMOS technique.
Various circuit in substrate 21 can be by arranging pad 35 and further utilizing the mode of Bonding with extraneous the electrical connection on substrate 21, perhaps run through the through hole 36 of substrate 21 and form and being electrically connected to of the external world in conjunction with the mode of soldered ball 37 by setting.
Accompanying drawing 1B be in accompanying drawing 1A micro-cantilever 22 (form of the repeated arrangement of M * N) forms the schematic diagram of focal plane arrays (FPA) with two dimension.Focal plane arrays (FPA) is comprised of a plurality of micro-cantilevers 22 with same structure, identical function, identical characteristics.The function of focal plane arrays (FPA) is that the target electromagnetic radiation of the object space that converges by optical system is formed corresponding image in the image space.
Accompanying drawing 2A is the detailed construction schematic diagram of the micro-cantilever 22 in accompanying drawing 1A and 1B, comprising: bridge pier 202, micro-cantilever main body 203, the first stress projection 205, stop projection 206, heater 211, absorption of electromagnetic radiation layer 207 and ELECTROMAGNETIC RADIATION REFLECTION layer 208.
The effect of bridge pier 202 is that micro-cantilever 22 is at the anchor point of substrate top surface.When the circuit that need to comprise in micro-cantilever 22 and substrate 21 and substrate 21 inside forms certain point and is connected, further be electrically connected to metal dish 201 formation of substrate top surface by the through hole 209 on bridge pier.Metal dish 201 can further form with the circuit (clearly not drawing in figure) of substrate 21 inside and be electrically connected to.
Cantilever beam main body 203 1 ends and bridge pier 202 are affixed, one end is free end, electromagnetic radiation in order to the sensing external world, and the effect of cantilever beam main body 203 also is to form certain heat isolation between the first stress projection 205 and bridge pier 202, be converted into substantially fuel factor with the radiation that is conducive to absorb, and can not lose by bridge pier 202 and substrate 21.Therefore the general dielectric material SiO that adopts lower thermal conductivity of cantilever beam main body 203
2, the making such as SiN, SiC.In this figure, only as simple signal, these professional personnel are appreciated that cantilever beam main body 203 can be designed to various shape as required.
The first stress projection 205 and heater 211 positions are the deformation region 204 of micro-cantilever 22, and its effect is under the thermal effect of radiation effect or add under the effect of the signal of telecommunication and make micro-cantilever 22 produce deformation.Deformation region 204 comprises the two-layer at least film with different thermal coefficient of expansions, in order to produce deformation in the process of variations in temperature.In this specific embodiment, cantilever beam main body 203 can be used as the film of low coefficient of thermal expansion materials, be the film of high thermal expansion coefficient material near the first stress projection 205 of substrate 21 1 side surfaces and be arranged on cantilever beam main body 203, the material of the first stress projection 205 generally adopts the making such as metal A l, Au and organic polymer.After temperature raises, greater than cantilever beam main body 203, can promote micro-cantilever 22 to the direction perk away from substrate due to the coefficient of expansion of the first stress projection 205.In other the specific embodiment, the first stress projection 205 also can be arranged on the surface away from substrate 21 1 sides of micro-cantilever main body 203, and the thermal coefficient of expansion of described the first stress projection 205 is less than the thermal coefficient of expansion of described micro-cantilever main body 203.So, after temperature raises, less than cantilever beam main body 203, can also pull micro-cantilever 22 to the direction perk away from substrate due to the coefficient of expansion of the first stress projection 205.
Stop that projection 206 is selectable unit (SU)s, be arranged on the free end of cantilever beam main body 203, its effect is when cantilever beam main body 203 is subjected to the residual stress effect crooked towards substrate 21 directions, can guarantee that cantilever beam main body 203 contacts with substrate 21 with less area, avoids the phenomenon that sticks together effectively.And, when micro-cantilever 22 forms focal plane arrays (FPA), the projection 206 that stops on different cantilever beams can be made as identical height, with the suppressing action by residual stress in conjunction with the supporting role that stops projection 206, control each micro-cantilever keep when static initial position with substrate between distance highly consistent.Form a cavity 210 between cantilever beam main body 203 and substrate 21, the height of operated by rotary motion cavity 210 is 1/4th of incident radiation wavelength.In the utility model, controlling the height that stops projection 206 is 50% to 80% of cavity 210 height.
Absorption of electromagnetic radiation layer 207 is also optional components with ELECTROMAGNETIC RADIATION REFLECTION layer 208.The effect of absorption of electromagnetic radiation layer 207 is the absorptivities that improve 203 pairs of incident radiations of cantilever beam main body, and the effect of ELECTROMAGNETIC RADIATION REFLECTION layer 208 is the unabsorbed radiation of reflection, further improves the absorptivity of 203 pairs of radiation of arm beam main body.In addition, when the deformation of micro-cantilever adopts condenser type to read, absorption of electromagnetic radiation layer 207 can be simultaneously as the top electrode of electric capacity, reflecting layer 208 can be simultaneously as the bottom electrode of electric capacity.Be electrically connected to by the testing circuit with the outside, further read the deformation quantity of cantilever beam main body 203.
Accompanying drawing 2B is the detailed construction schematic diagram of the another kind of concrete real formula mode of micro-cantilever in accompanying drawing 1A and 1B, different from accompanying drawing 2A is, stop that projection 206 ' be arranged on substrate 21 is near on the surface of the free-ended side of micro-cantilever 22 in accompanying drawing 2B, also can guarantee that cantilever beam main body 203 contacts with substrate 21 with less area, avoids the phenomenon that sticks together effectively.
Next provide by reference to the accompanying drawings the method that adopts detector detecting electromagnetic radiation shown in accompanying drawing 1A and 1B, implementation step schematic diagram with reference to this method shown in accompanying drawing 3, described method comprises the steps: step S30, heater in micro-cantilever is applied heating voltage or electric current, make all micro-cantilever deformation to break away from static initial position; Step S31 detects micro-cantilever deformation size separately; Step S32 adjusts heating voltage or the electric current that applies on each micro-cantilever, so that the deformation between each cantilever beam is consistent according to testing result.
Refer step S30 applies heating voltage or electric current to the heater 211 in micro-cantilever 22, makes 22 deformation of all micro-cantilevers to break away from static initial position.
It is micro-cantilever 22 is in initial position after preparation is completed schematic diagram shown in accompanying drawing 4A, micro-cantilever 22 particularly under the residual stress effect of its deformation region 204 to substrate 21 surface curvature deformation, stop that projection 206 and substrate 21 produce contact and cantilever beam main body 203 is produced supports.
That micro-cantilever 22 is after heating by built-in heater 211 shown in accompanying drawing 4B, because the first stress projection 205 in deformation region 204 will produce larger expansion with respect to cantilever beam main body 203, cantilever beam main body 203 is produced an active force that makes progress, when being heated to uniform temperature, expansion power upwards will be greater than the downward residual stress of micro-cantilever, cause micro-cantilever to be bent upwards deformation and leave its static initial position, stopping that projection 206 no longer contacts with substrate top surface.For the convenience of subsequent calibrations, in this step, preferred ten thousand apply identical heating voltage or electric current on each micro-cantilever 22.
Step S31 detects micro-cantilever deformation size separately.This detection can be passed through any one electrical way such as piezoelectricity, pressure drag, capacitance variations, change of frequency, tunneling effect and detect.Cantilever beam shown in accompanying drawing 2A, 4A and 4B has comprised can be as the absorption of electromagnetic radiation layer 207 and ELECTROMAGNETIC RADIATION REFLECTION layer 208 of capacitance electrode, by detecting capacitance between the two, can judge the distance between cantilever beam main body 203 and substrate 21, thereby judge the deformation of micro-cantilever 22.In the situation that heating voltage or electric current that each micro-cantilever 22 applies are identical, this step can further obtain the deformation values of each micro-cantilever 22, and then calculates the heterogeneity between different micro-cantilevers.
Step S32 adjusts according to testing result heating voltage or the electric current that the heater 211 of each micro-cantilever 22 applies, so that the deformation between each cantilever beam main body 203 is consistent.So just reached the purpose that micro-cantilever 22 original states are calibrated.
After calibration, detector namely can the receiving target radiation, because the fuel factor of radiation produces heat effect to cantilever beam, cause the further deformation on the initial position of its duty, the deformation that causes by detecting above-mentioned thermal effect of radiation is by obtaining the information such as intensity distribution of target emanation after processing.
In working long hours, the position of micro-cantilever 22 may produce drift, at this moment can be according to the actual conditions in the detector course of work and needs, temporarily stop the heating to micro-cantilever 22 internal heater 211, make all micro-cantilevers 22 get back to static initial position, implement afterwards above-mentioned steps S30 to step S32, detector is implemented Nonuniformity Correction again.And in the detector course of work, can repeatedly repeat above-mentioned operation to improve the picture quality of detector.
Accompanying drawing 5A is the structural representation of the another kind of specific embodiment of bi-material microcantilevel 22 described in the utility model.Different from accompanying drawing 2A is, this specific embodiment further comprises the second stress projection 505, the second stress projection 505 also is arranged at micro-cantilever main body 203 near on the surface of substrate one side, and has a distance with the first stress projection 205, namely the thermal coefficient of expansion of 305, the second stress projections 505 of the isolated area as shown in accompanying drawing 5A is also greater than the thermal coefficient of expansion of micro-cantilever main body 203.
The function of the second stress projection 505 is mainly for the effect for the electromagnetic radiation response.The effect of isolated area 305 is to reduce the fuel factor of heater 211 to the impact of the second stress projection 505, the deformation that guarantees the second stress projection 505 mainly comes from extraneous radiation, thereby realize better the calibration function to detector, and improve detector sensitivity.
Fig. 5 B is the structural representation of another specific embodiment of the described micro-cantilever of the utility model specific embodiment, different from accompanying drawing 5A is, stop that projection 206 ' be arranged on substrate 21 is near on the surface of the free-ended side of micro-cantilever 22 in accompanying drawing 5B, also can guarantee that cantilever beam main body 203 contacts with substrate 21 with less area, avoids the phenomenon that sticks together effectively.
The main making step of above-mentioned bi-material microcantilevel radiation sensor mainly comprises: (1) as required, processing and manufacturing CMOS reading circuit and heating control circuit.(2) utilize MEMS micro fabrication processing and manufacturing bi-material microcantilevel.(3) make the scolder ring on probe substrate.(4) capping of processing and fabricating wafer-level packaging.(5) capping of wafer-level packaging and probe substrate aims at.(6) as required, vacuum exhaust or backfilled with inert gas etc.(7) scolder adds hot reflux, makes the capping of wafer-level packaging and the scolder ring seal of probe substrate connect the formation air-tight packaging.
A kind of MEMS micro fabrication flow process of above-mentioned bi-material microcantilevel mainly comprises: (1) makes metal level as the bottom electrode of electric capacity and radiation reflecting layer in substrate top surface, simultaneously can being electrically connected to as the circuit that comprises in micro-cantilever and substrate.(2) deposition of sacrificial layer, sacrificial layer material can adopt polyimides, non-crystalline silicon etc., and the thickness general control of sacrifice layer is in 1/4th scopes of incident radiation wavelength.(3) sacrifice layer is graphical, mainly removes by methods such as chemical wet etchings the sacrifice layer of making in the future outstanding structure position.(4) deposition second layer sacrifice layer, its thickness general control is at the 20%-50% of ground floor sacrificial layer thickness.(5) sacrifice layer is graphical, mainly removes by methods such as chemical wet etchings and makes the sacrifice layer at bridge pier position in the future.(6) have the material layer of higher thermal expansion coefficient in the two material structures of deposition, and graphical.(7) depositional fabric layer is generally made by materials such as SiO2, SiN with lower thermal coefficient of expansion and lower thermal conductivity, SiC, can be simultaneously as the formation of heat insulation structure and two material structures of micro-cantilever.(8) make through hole, mainly by the structure sheaf in graphical bridge pier, expose the metal dish of substrate top surface.(9) make heater structure.(10) make radiation absorption layer.Radiation absorption layer can adopt same layer material or different layers material with heater structure.If adopt the different layers material, need to arrange electric insulation layer between the two.(11) graphical bi-material microcantilevel.
A kind of processing process of above-mentioned wafer scale capping mainly comprises: (1) produces cavity by patterned method in capping.(2) make as required radiation anti-reflection film or cut film.(3) make the scolder ring, generally comprise adhesion layer, barrier layer, solder layer etc., can adopt the methods such as sputter, plating to make.(4) make getter.In above-mentioned manufacturing process, also will make alignment mark etc. as required.
Above-mentioned MEMS preparation method just in order to further illustrate implementation method of the present utility model, is not unique implementation method of the present utility model.Of the present utility modelly focus on providing a kind of method of utilizing the internal heater on pixel, reach the purpose to the Nonuniformity Correction of micro-cantilever.The structure that these professional personnel can provide according to the utility model and the various combination of existing manufacture craft are realized the making of above-mentioned micro cantilever structure.
Claims (8)
1. a bi-material microcantilevel, be arranged at a substrate surface, it is characterized in that, comprising:
The micro-cantilever main body;
The first stress projection, described the first stress projection is arranged on the surface of close substrate one side of micro-cantilever main body, and the thermal coefficient of expansion of described the first stress projection is greater than the thermal coefficient of expansion of described micro-cantilever main body, perhaps described the first stress projection is arranged on the surface away from substrate one side of micro-cantilever main body, and the thermal coefficient of expansion of described the first stress projection is less than the thermal coefficient of expansion of described micro-cantilever main body;
Heater, described heater are arranged in the cantilever beam main body, are used for heating described cantilever beam main body and described the first stress projection, and described heater further arranges two pins at least, and described pin is used for connecting with the extraneous electricity that forms.
2. bi-material microcantilevel as claimed in claim 1, is characterized in that, the upper surface of described micro-cantilever further arranges the absorption of electromagnetic radiation layer, and described substrate surface further arranges the ELECTROMAGNETIC RADIATION REFLECTION layer.
3. bi-material microcantilevel as claimed in claim 1, is characterized in that, comprises further between described micro-cantilever and substrate that one stops projection, and described to stop that projection is arranged on micro-cantilever free-ended near on the surface of substrate one side.
4. bi-material microcantilevel as claimed in claim 1, is characterized in that, comprises further between described micro-cantilever and substrate that one stops projection, describedly stops that projection is arranged on substrate near on the surface of the free-ended side of micro-cantilever.
5. bi-material microcantilevel as claimed in claim 1, it is characterized in that, described micro-cantilever surface further arranges one first electrode, the further correspondence of described substrate surface arranges a second electrode lay, described the first and second electrodes complement each other to form a Detection capacitance, in order to detect the deformation of described micro-cantilever.
6. bi-material microcantilevel as claimed in claim 1, it is characterized in that, further comprise one second stress projection, described the second stress projection is arranged at described micro-cantilever main body near on the surface of substrate one side, and has a distance with the first stress projection, the thermal coefficient of expansion of described the second stress projection is greater than the thermal coefficient of expansion of described micro-cantilever main body, perhaps described the second stress projection is arranged on the surface of described micro-cantilever main body away from substrate one side, and has a distance with the first stress projection, the thermal coefficient of expansion of described the second stress projection is less than the thermal coefficient of expansion of described micro-cantilever main body.
7. an electromagnetic radiation detector, comprise substrate, the capping of substrate surface, and by the cavity that substrate and capping restriction form, it is characterized in that:
Described cavity comprises the described micro-cantilever of a plurality of claim 1-6 any one;
Described substrate comprises a heating control circuit, and described heating control circuit is connected with described heater electricity.
8. electromagnetic radiation detector according to claim 7, is characterized in that, a plurality of micro-cantilevers in described cavity are further with array format.
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| CN 201220505673 CN202924718U (en) | 2012-09-29 | 2012-09-29 | Double-material micro-cantilever and electromagnetic radiation detector |
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| CN 201220505673 CN202924718U (en) | 2012-09-29 | 2012-09-29 | Double-material micro-cantilever and electromagnetic radiation detector |
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| CN 201220505673 Expired - Lifetime CN202924718U (en) | 2012-09-29 | 2012-09-29 | Double-material micro-cantilever and electromagnetic radiation detector |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102874735A (en) * | 2012-09-29 | 2013-01-16 | 姜利军 | Two-material micro-cantilever, electromagnetic radiation detector and detection method |
| CN104143544A (en) * | 2014-05-29 | 2014-11-12 | 中国科学院微电子研究所 | Wafer silicon through hole structure and preparation method thereof |
| CN110040678A (en) * | 2019-04-18 | 2019-07-23 | 中国科学院上海微系统与信息技术研究所 | Microsensor and preparation method thereof |
| CN110967119A (en) * | 2019-11-18 | 2020-04-07 | 中国空间技术研究院 | Ultra-wide waveband uncooled infrared detector with single-layer structure and preparation method thereof |
| CN111757226A (en) * | 2020-06-19 | 2020-10-09 | 歌尔微电子有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
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2012
- 2012-09-29 CN CN 201220505673 patent/CN202924718U/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102874735A (en) * | 2012-09-29 | 2013-01-16 | 姜利军 | Two-material micro-cantilever, electromagnetic radiation detector and detection method |
| CN102874735B (en) * | 2012-09-29 | 2015-01-07 | 姜利军 | Two-material micro-cantilever, electromagnetic radiation detector and detection method |
| CN104143544A (en) * | 2014-05-29 | 2014-11-12 | 中国科学院微电子研究所 | Wafer silicon through hole structure and preparation method thereof |
| CN104143544B (en) * | 2014-05-29 | 2016-08-24 | 中国科学院微电子研究所 | A kind of wafer through-silicon via structure and preparation method thereof |
| CN110040678A (en) * | 2019-04-18 | 2019-07-23 | 中国科学院上海微系统与信息技术研究所 | Microsensor and preparation method thereof |
| CN110040678B (en) * | 2019-04-18 | 2021-06-18 | 中国科学院上海微系统与信息技术研究所 | Micro sensor and preparation method thereof |
| CN110967119A (en) * | 2019-11-18 | 2020-04-07 | 中国空间技术研究院 | Ultra-wide waveband uncooled infrared detector with single-layer structure and preparation method thereof |
| CN111757226A (en) * | 2020-06-19 | 2020-10-09 | 歌尔微电子有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
| CN111757226B (en) * | 2020-06-19 | 2022-01-14 | 歌尔微电子有限公司 | MEMS chip, manufacturing method thereof and MEMS microphone |
| CN112505744A (en) * | 2020-11-24 | 2021-03-16 | 南昌华亮光电有限责任公司 | Gamma case processor and method for separating two material cases and capable of continuous operation |
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