CN109502540B - Preparation method of polarization type infrared detector based on film bulk acoustic resonator - Google Patents
Preparation method of polarization type infrared detector based on film bulk acoustic resonator Download PDFInfo
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
Abstract
A preparation method of a polarization type infrared detector based on a film bulk acoustic resonator relates to the technical field of infrared detection, solves the problems that the infrared detector obtained by the preparation method is low in absorptivity and the structure and the performance of the infrared polarization detector need to be improved, and comprises the steps of preparing the film bulk acoustic resonator; sequentially preparing a metal reflecting layer, a dielectric layer and a metal array layer on the film bulk acoustic resonator; preparing a readout integrated circuit substrate; connecting the readout integrated circuit substrate and the film bulk acoustic resonator; the metal array layer is composed of a plurality of metal units with consistent characteristic directions. The preparation method has the advantages of integrated manufacturing, batch production, low cost and the like; the metal array layer is utilized to realize polarized light absorption and enhanced absorption of infrared spectrum, and absorbed energy acts on the film bulk acoustic resonator to improve the absorption rate; the prepared infrared detector has the advantages of small volume and weight, low cost, quick response and high detection sensitivity, and has the advantages of the traditional uncooled infrared detection.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to a method for preparing a polarization type infrared detector based on a film bulk acoustic resonator.
Background
The non-refrigeration type infrared detector is also called as a room temperature detector, can work under the room temperature condition without refrigeration, and has the advantages of being easier to carry and the like. Uncooled infrared detectors are typically thermal detectors, i.e., operate by detecting the thermal effects of infrared radiation. The uncooled infrared detector has advantages over a refrigeration type infrared detector in terms of volume, weight, life, cost, power consumption, starting speed, stability and the like because a refrigeration mechanism with large volume and high price is omitted. But has a difference in response time and detection sensitivity compared with a refrigeration type infrared detector.
In recent years, with the development of micro-nano sensing technology, the application of the film bulk acoustic resonator is also expanded to the field of uncooled infrared detectors. On one hand, the film bulk acoustic resonator generally has a miniature size and has stronger external interference resistance; on the other hand, the film bulk acoustic resonator usually works in resonance simulation and has a high quality factor, so that the device shows high sensitivity; the two aspects promote that the uncooled infrared detector based on the film bulk acoustic resonator shows excellent signal-to-noise ratio indexes. In addition, the film bulk acoustic resonator adopts a frequency readout circuit mode, and the mode can effectively inhibit flicker noise (1/f noise).
However, in the existing preparation method of the uncooled infrared detector based on the film bulk acoustic resonator, the prepared detectors have low absorptivity to infrared radiation and no selectivity to incident spectrum.
With the gradual development of military protection technology, the traditional infrared detector cannot meet the requirement of accurate target detection in a complex background. The infrared polarization detection technology can simultaneously acquire the intensity and the polarization information of target radiation, ensures the detection accuracy in complex environments such as camouflage, smoke screens and the like, and has revolutionary breakthrough on the infrared detection technology. Therefore, the market has a more pressing need for high performance infrared polarization detectors. Infrared polarization detection is generally divided into several polarization techniques such as time-sharing, amplitude-sharing, aperture-dividing, and focal plane-dividing. The time-sharing polarization detector obtains information of different polarization directions at different time points by rotating the polarizing film, and the technology is simple in method, but unstable in structure and easy to generate virtual images; the amplitude-dividing polarization detector consists of a plurality of different focal planes, and each focal plane light path is provided with polarization polarizers in different directions, so that the system can effectively reduce virtual images caused by target movement, but has low energy utilization rate, large volume and high price; the aperture-dividing polarization detector projects images in different polarization directions to different areas of a focal plane through light path control, compared with an amplitude-dividing system, the aperture-dividing polarization detector has a shorter light path, and the light path after alignment is not easily interfered, but has low spatial resolution and larger volume weight. Therefore, a preparation method is needed to make the prepared infrared detector have the advantages of high stability, high energy utilization rate, small volume and weight, low cost and the like.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a polarization type infrared detector based on a film bulk acoustic resonator.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the preparation method of the polarization type infrared detector based on the film bulk acoustic resonator comprises the following steps:
s1, obtaining a silicon substrate;
s2, preparing a left through hole, a right through hole and a groove on the silicon substrate; the groove is positioned on the upper surface of the silicon substrate, and the left through hole and the right through hole are separated from two sides of the groove and penetrate through the upper surface and the lower surface of the silicon substrate;
s3, preparing a left through hole electrode in the left through hole, preparing a right through hole electrode in the right through hole, preparing a first electrode at the lower end of the left through hole electrode and the lower surface of the silicon substrate, and preparing a second electrode at the lower end of the right through hole electrode and the lower surface of the silicon substrate;
s4, filling the groove with a sacrificial layer material to prepare a sacrificial layer, wherein the sacrificial layer covers the upper surface of the silicon substrate, and the thickness of the sacrificial layer is larger than the depth of the groove;
s5, carrying out planarization treatment on the upper surface of the silicon substrate until the sacrificial layer and the upper surface of the silicon substrate are coplanar;
s6, preparing a bottom electrode on the upper surfaces of the silicon substrate and the sacrificial layer obtained in the S5; the bottom electrode covers the sacrificial layer obtained in the step S5, and is connected with the left through hole electrode;
s7, preparing a piezoelectric layer on the upper surface of the bottom electrode;
s8, preparing a top electrode on the upper surface of the piezoelectric layer; the top electrode is connected with the right through hole electrode;
s9, preparing a metal reflecting layer on the upper surface of the top electrode;
s10, preparing a dielectric layer on the upper surface of the metal reflecting layer;
s11, preparing a metal array layer on the upper surface of the dielectric layer; the metal array layer is composed of a plurality of metal units with consistent characteristic directions;
s12, etching the sacrificial layer obtained in the step S5 to obtain a cavity, and finishing the preparation of the film bulk acoustic resonator;
s13, preparing a readout integrated circuit substrate;
and S14, bonding the first electrode and the second electrode on the read integrated circuit substrate to obtain the uncooled infrared detector, and completing the preparation.
Such as a non-refrigeration infrared detector prepared by the preparation method of the polarization type infrared detector based on the film bulk acoustic resonator.
The invention has the beneficial effects that:
1. according to the invention, through integrating the structure of the metal reflecting layer, the dielectric layer and the metal array layer on the surface of the film bulk acoustic resonator, the metal array layer is utilized to realize enhanced absorption of infrared spectrum, and the absorbed energy acts on the film bulk acoustic resonator, so that the problem of low infrared radiation absorption rate of the sensitive surface of the film bulk acoustic resonator is solved, and the absorption rate of the uncooled infrared detector is improved from 20% to more than 80%.
2. Polarized light absorption is realized by preparing a metal array layer consisting of a plurality of metal units with consistent characteristic directions, the imaging error of the infrared polarization detector caused by alignment deviation between a polarizing film and an imaging unit is solved, and the stability is high; the micro-nano polarization structure is directly prepared on the film bulk acoustic resonator, the size is small, the process is simple to manufacture, the response rate of the detector is greatly improved, the subsequent optical system design is simplified, and the infrared polarization detector is optimized in structure and performance.
3. The invention is manufactured by an MEMS micromachining method, and integrates the film bulk acoustic resonator, the metal reflecting layer, the dielectric layer and the metal array layer on the reading integrated circuit substrate, thereby having the advantages of integrated manufacturing, batch production, low cost and the like.
4. The uncooled infrared detector prepared by the preparation method is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared detector of a traditional micro-bridge structure.
5. The infrared detector prepared by the preparation method disclosed by the invention has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared detection, and also has the advantages of quick response and high detection sensitivity of the refrigerated infrared detector.
Drawings
Fig. 1 is a state diagram corresponding to S1 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 2 is a state diagram corresponding to the process S2 for manufacturing the uncooled infrared detector of the present invention.
Fig. 3 is a state diagram corresponding to the process S3 for manufacturing the uncooled infrared detector of the present invention.
Fig. 4 is a state diagram corresponding to S4 of the process for manufacturing the uncooled infrared detector of the present invention.
Fig. 5 is a state diagram corresponding to S5 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 6 is a state diagram corresponding to S6 of the process for manufacturing the uncooled infrared detector of the present invention.
Fig. 7 is a state diagram corresponding to S7 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 8 is a state diagram corresponding to S8 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 9 is a state diagram corresponding to S9 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 10 is a state diagram corresponding to S10 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 11 is a state diagram corresponding to S11 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 12 is a state diagram corresponding to S12 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 13 is a state diagram corresponding to S13 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 14 is a state diagram corresponding to S14 of a process for manufacturing an uncooled infrared detector according to the present invention.
Fig. 15 is a schematic structural diagram of an uncooled infrared detector of the present invention.
Fig. 16 is a specific structure diagram of the metal array layer of the uncooled infrared detector of the present invention.
Fig. 17 is another detailed structural view of the metal array layer of the uncooled infrared detector of the present invention.
Fig. 18 is a schematic diagram of a read-out integrated circuit substrate of the uncooled infrared detector of the present invention.
Fig. 19 is a schematic structural diagram of a film bulk acoustic resonator of the uncooled infrared detector of the invention.
In the figure: 1. 1-1 of a readout integrated circuit substrate, 1-1 of a first substrate electrode, 1-2 of a second substrate electrode, 1-3 of a substrate, 2 of a thin film bulk acoustic resonator, 2-1 of a top electrode, 2-.2 of a piezoelectric layer, 2-3 of a bottom electrode, 2-4 of a first electrode, 2-5 of a second electrode, 2-6 of a silicon substrate, 2-7 of a right via electrode, 2-8 of a left via electrode, 2-9 of a cavity, 2-17 of a right via, 2-18 of a left via, 2-19 of a groove, 2-29 of a sacrificial layer, 3 of a polarization response structure, 3-1 of a metal array layer, 3-11 of a metal unit, 3-12 of an opening, 3-2 of a dielectric layer, 3-3 of a metal reflective layer, 4 of a metal reflective layer, A first connection layer, 5, a second connection layer.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
The invention relates to a preparation method of a polarization type infrared detector based on a film bulk acoustic resonator, which comprises the following specific steps:
s1, obtaining a silicon substrate 2-6
As shown in fig. 1, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-polished silicon wafers commonly used in the semiconductor industry.
S2, preparing left through holes 2-18, right through holes 2-17 and grooves 2-19 on silicon substrates 2-6
As shown in fig. 2, left via hole 2-18, right via hole 2-17 and groove 2-19 are prepared on silicon substrate 2-6 (in S12, groove 2-19 cooperates with bottom electrode 2-3 to become cavity 2-9). The groove is located on the upper surface of the silicon substrate, the left through hole 2-18 is located on the left side of the groove 2-19, the right through hole 2-17 is located on the right side of the groove 2-19, and the left through hole 2-18 and the right through hole 2-17 penetrate through the upper surface and the lower surface of the silicon substrate. The process for making the left vias 2-18 and the right vias 2-17 typically uses deep silicon ion reactive etching (DRIE). The preparation process of the grooves 2-19 can adopt dry etching or wet etching.
S3, manufacturing a conductive electrode
As shown in fig. 3, a left through-hole electrode 2-8 is prepared in the left through-hole 2-18, a right through-hole electrode 2-7 is prepared in the right through-hole 2-17, a first electrode 2-4 is prepared at the lower end of the left through-hole electrode 2-8 and the lower surface of the silicon substrate 2-6, and the first electrode 2-4 is connected with the lower end of the left through-hole electrode 2-8. And manufacturing a second electrode 2-5 at the lower end of the right through hole electrode 2-7 and the lower surface of the silicon substrate 2-6, wherein the second electrode 2-5 is connected with the lower end of the right through hole electrode 2-7. The left through-hole electrode 2-8, the right through-hole electrode 2-7, the first electrode 2-4 and the second electrode 2-5 are usually prepared by electroplating, and the electroplating material can be Cu, Au or Ni.
S4, filling the grooves 2-19 with a sacrificial material
As shown in fig. 4, a first sacrificial layer is deposited on the upper surface of the silicon substrate 2-6 by using a sacrificial layer material, and the first sacrificial layer fills the covering grooves 2-19 and covers the upper surface of the silicon substrate 2-6. The thickness of the first sacrificial layer is larger than the depth of the recesses 2-19. The material of the first sacrificial layer is usually borosilicate glass. The first sacrificial layer and the second sacrificial layer described below are collectively referred to as sacrificial layers 2-29.
S5, grinding the upper surfaces of the silicon substrates 2-6 to be flat
As shown in fig. 5, the upper surface of the silicon substrate 2-6 is planarized until the sacrificial layer 2-29 and the upper surface of the silicon substrate 2-6 are coplanar. Planarization is usually performed by chemical mechanical polishing. After the silicon substrates 2-6 are flattened, the left through hole electrodes 2-8 and the right through hole electrodes 2-7 are exposed on the upper surfaces of the silicon substrates 2-6, the first sacrificial layers are called second sacrificial layers after being flattened, the second sacrificial layers only exist in the grooves 2-19, and the upper surfaces of the second sacrificial layers are coplanar with the upper surfaces of the silicon substrates 2-6.
S6, preparing a bottom electrode 2-3
As shown in fig. 6, a bottom electrode 2-3 is prepared on the upper surface of the silicon substrate 2-6 and the upper surface of the second sacrificial layer after completion of S5. One end of the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the bottom electrode 2-3 covers the second sacrificial layer. The bottom electrode 2-3 is typically prepared by a magnetron sputtering process.
S7, preparing a piezoelectric layer 2-2
As shown in fig. 7, a piezoelectric layer 2-2 is prepared on the upper surface of the bottom electrode 2-3. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the groove 2-19 (i.e., the cavity 2-9 of S12) on the silicon substrate 2-6. The piezoelectric layer 2-2 is typically prepared by vapor phase chemical deposition.
S8, preparing a top electrode 2-1
As shown in fig. 8, a top electrode 2-1 is prepared on the upper surface of the piezoelectric layer 2-2. One end of the top electrode 2-1 is connected with the right through hole electrode 2-7. The top electrode 2-1 is typically prepared by a magnetron sputtering process.
S9, preparing a metal reflecting layer 3-3
As shown in fig. 9, a metal reflective layer 3-3 is prepared on the upper surface of the top electrode 2-1. The metal reflecting layer 3-3 is generally prepared by a sputtering or vacuum evaporation method, and the area of the metal reflecting layer 3-3 is smaller than that of the top electrode 2-1.
S10, preparing a dielectric layer 3-2
As shown in fig. 10, a dielectric layer 3-2 is prepared on the upper surface of the metal reflective layer 3-3. The dielectric layer 3-2 is generally prepared by a sputtering or vacuum evaporation process. The area of the dielectric layer 3-2 is generally smaller than or equal to the area of the metal reflecting layer 3-3, and the area of the lower surface of the dielectric layer 3-2 is smaller than or equal to the area of the upper surface of the metal reflecting layer 3-3.
S11, preparing a metal array layer 3-1
As shown in fig. 11, a metal array layer 3-1 is prepared on the upper surface of the dielectric layer 3-2, and the polarization response structure 3 (the metal array layer 3-1, the dielectric layer 3-2, and the metal reflective layer 3-3) is obtained at this time. The metal array layer 3-1 can be formed by photolithography, electron beam lithography, lift-off, or the like.
S12, etching the sacrificial layer 2-29 to obtain the cavity 2-9
As shown in fig. 12, the second sacrificial layer is released to obtain the cavities 2-9, that is, the film bulk acoustic resonator 2 is obtained, and at this time, the polarization response structure 3 and the film bulk acoustic resonator 2 are in a connected state. The cavities 2-9 can be obtained by wet etching the second sacrificial layer with an HF solution or dry etching the second sacrificial layer with gaseous HF.
S13, preparing a readout integrated circuit substrate 1
As shown in fig. 13, a readout integrated circuit substrate 1 is prepared. The readout integrated circuit substrate 1 includes a substrate 1-3, two substrate electrodes, referred to as a first substrate electrode 1-1 and a second substrate electrode 1-2, disposed on the substrate 1-3 and connected to the substrate 1-3, respectively.
S14, bonding the readout integrated circuit substrate 1 and the film bulk acoustic resonator 2
As shown in fig. 14, the film bulk acoustic resonator 2 is connected to the readout integrated circuit substrate 1 by bonding, and the uncooled infrared detector is obtained. I.e. the first substrate electrode 1-1 and the first electrode 2-4 are connected and the second substrate electrode 1-2 and the second electrode 2-5 are connected. The bonding method generally adopts a metal thermocompression bonding process.
S15, packaging
The resulting device of S14 is packaged. The coaming is glued on the readout integrated circuit substrate 1, and then the infrared window is glued on the upper part of the coaming, and the infrared window 5 is positioned right above the metal array layer 3-3. The readout integrated circuit substrate 1, the surrounding plate and the infrared window form a sealed cavity. The coaming can adopt a silicon wafer, a glass sheet or a ceramic packaging structure and the like. The sealed cavity can be vacuumized according to the requirements of the film bulk acoustic resonator 2 and the polarization response structure 3. The preparation is finished.
The bottom electrode 2-3 and the top electrode 2-1 are usually made of Mo, W, Al, Pt or Ni. The piezoelectric layer 2-2 is usually AlN, ZnO or LiNbO3Or quartz, etc. The right through-hole electrode 2-7, the left through-hole electrode 2-8, the first electrode 2-4 and the second electrode 2-5 are usually made by electroplating process, and the material can be selected from Au, Cu or Ni, but not limited to these materials.
The manufacturing method integrates the film bulk acoustic resonator 2, the metal reflecting layer 3-3, the dielectric layer 3-2 and the metal array layer 3-1 on the readout integrated circuit substrate 1 by an MEMS micro-processing method, so that the manufacturing method has the advantages of integrated manufacturing, batch production, low cost and the like.
The polarization-sensitive infrared detector of the film bulk acoustic resonator 2 manufactured by the method can be defined as comprising a readout integrated circuit substrate 1 (also called as an ROIC substrate), a film bulk acoustic resonator 2, a metal reflection layer 3-3, a dielectric layer 3-2 and a metal array layer 3-1, as shown in fig. 15, the readout integrated circuit substrate 1, the film bulk acoustic resonator 2, the metal reflection layer 3-3, the dielectric layer 3-2 and the metal array layer 3-1 are sequentially connected, the film bulk acoustic resonator 2 is positioned on the readout integrated circuit substrate 1, the metal reflection layer 3-3 is positioned on the upper surface of the film bulk acoustic resonator 2, the dielectric layer 3-2 is positioned on the upper surface of the metal reflection layer 3-3, and the metal array layer 3-1 is positioned on the upper surface of the dielectric layer 3-2. The metal array layer 3-1 is composed of a plurality of metal units 3-11 with consistent characteristic directions.
The thin film bulk acoustic resonator 2 and the metal reflective layer 3-3 may be connected directly or through a first connection layer 4 (the top electrode 2-1 is connected to the metal reflective layer 3-3 through the first connection layer 4), the readout integrated circuit substrate 1 and the thin film bulk acoustic resonator 2 may be connected directly or through a second connection layer 5 (the readout integrated circuit substrate 1 is connected to the silicon substrate 2-6 through the second connection layer 5), and the second connection layer 5 is a connection electrode.
The polarization-sensitive infrared detector based on the film bulk acoustic resonator 2 prepared by the preparation method provides a non-refrigeration infrared detector structure based on the technologies of the metal reflecting layer 3-3, the dielectric layer 3-2, the metal array layer 3-1 and the film bulk acoustic resonator 2. The sensing mechanism is that the metal array layer 3-1, the dielectric layer 3-2 and the metal reflecting layer 3-3 are utilized to realize the enhanced absorption of the infrared spectrum, the absorbed energy acts on the film bulk acoustic resonator 2, and the infrared radiation amount is deduced by detecting the change of the electrical parameters of the film bulk acoustic resonator 2. According to the invention, the structure of integrating the metal reflecting layer 3-3, the dielectric layer 3-2 and the metal array layer 3-1 on the surface of the film bulk acoustic resonator 2 overcomes the problem of low infrared radiation absorption rate of the sensitive surface of the film bulk acoustic resonator 2, the absorption rate of the uncooled infrared detector is improved to more than 80% from less than 20% in the prior art, and the selectivity of the uncooled infrared detector to an incident spectrum is also increased. The infrared polarization detector comprises a metal array layer 3-1 consisting of a plurality of metal units 3-11 with the same characteristic direction, a polarization response structure 3 consisting of the metal reflection layer 3-3, a dielectric layer 3-2 and the metal array layer 3-1, wherein the polarization response structure 3 realizes polarized light absorption, solves the imaging error of the infrared polarization detector caused by alignment deviation between a polarizing film and an imaging unit, and has high stability; the micro-nano polarization structure is directly prepared on the film bulk acoustic resonator 2, namely the metal array layer 3-1 with the polarization performance is prepared, the process is simple to manufacture, the size is small, the response rate of the detector is greatly improved, the subsequent optical system design is simplified, and the infrared polarization detector is optimized in structure and performance (including spatial resolution). In addition, the uncooled infrared detector provided by the invention is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared detector of a traditional micro-bridge structure. The film bulk acoustic resonator 2, the metal reflecting layer 3-3, the dielectric layer 3-2 and the metal array layer 3-1 are integrated on the readout integrated circuit substrate 1, so that the readout integrated circuit substrate has the advantages of integrated manufacturing, batch production, low cost and the like. The uncooled infrared detector has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared detection, and also has the advantages of quick response and high detection sensitivity of the refrigeration type infrared detector.
The metal array layer 3-1 of S11 is composed of a repeating structure of metal units 3-11, which has a distinct directional characteristic, and the characteristic direction is consistent between the metal units 3-11. When the direction of the polarized light is consistent with the characteristic direction of the metal units 3-11, the infrared radiation absorption is obviously enhanced, namely, the polarization sensitive infrared absorption is realized. The metal array layer 3-1 may be specifically as shown in fig. 16 and 17, each metal unit 3-11 is provided with an opening 3-12, the directions of the openings 3-12 between the metal units 3-11 are the same, the metal units 3-11 in fig. 16 are all U-shaped structures, the U-shaped outer contour in fig. 16 is a rectangle with the openings 3-12, and the U-shaped outer contour in fig. 17 is a circle with the openings 3-12. Fig. 16 and 17 are examples of two structures of the metal array layer 3-1 on the dielectric layer 3-2, but are not limited to the two structures of fig. 16 and 17.
The material of the metal array layer 3-1 is usually Au, Ag, Al, etc., but is not limited to these three metals; the metal array layer 3-1 can be fabricated by conventional semiconductor process and electron beam lithography. The material of the dielectric layer 3-2 is Ge or MgF2、SiO2Or AlN, etc., but is not limited to these materials.
The structure of the readout integrated circuit substrate 1 is shown in fig. 18. The function of the readout integrated circuit substrate 1 is to read an electrical signal of the thin film bulk acoustic resonator 2. The readout integrated circuit substrate 1 generally operates in a radio frequency band, and more specifically, the readout integrated circuit substrate 1 operates in a band (about 1GHz to 3GHz) near the resonance frequency of the thin film bulk acoustic resonator 2.
The film bulk acoustic resonator 2 of S12 includes a silicon substrate 2-6, a cavity 2-9, a bottom electrode 2-3, a piezoelectric layer 2-2, a top electrode 2-1, a left via electrode 2-8, a right via electrode 2-7, a first electrode 2-4, and a second electrode 2-5, and the specific structure is shown in fig. 19. The silicon substrate 2-6 is provided with a left through hole 2-18 and a right through hole 2-17, the left through hole electrode 2-8 is positioned in the left through hole 2-18, the left through hole electrode 2-8 fills the left through hole 2-18, the right through hole electrode 2-7 is positioned in the right through hole 2-17, and the right through hole electrode 2-7 fills the right through hole 2-17. The first electrode 2-4 and the second electrode 2-5 are arranged on the lower surface of the silicon substrate 2-6, the first electrode 2-4 is connected with the lower end of the left through hole electrode 2-8 and can be integrally formed with the left through hole electrode 2-8, and the second electrode 2-5 is connected with the lower end of the right through hole electrode 2-7 and can be integrally formed with the right through hole electrode 2-7. The first electrode 2-4 is connected with a first substrate electrode 1-1 of the readout integrated circuit substrate 1, the second electrode 2-5 is connected with a second substrate electrode 1-2 of the readout integrated circuit substrate 1, the left through hole electrode 2-8 is communicated with the readout integrated circuit substrate 1 through the first electrode 2-4, and the right through hole electrode 2-7 is communicated with the readout integrated circuit substrate 1 through the second electrode 2-5. The cavity 2-9 is located on the upper surface of the silicon substrate 2-6, the bottom electrode 2-3 is arranged on the cavity 2-9 and the silicon substrate 2-6, the cavity 2-9 is located between the bottom electrode 2-3 and the silicon substrate 2-6, the bottom electrode 2-3 covers the cavity 2-9, namely the projection area of the cavity 2-9 on the silicon substrate 2-6 is smaller than the projection area of the bottom electrode 2-3 on the silicon substrate 2-6, namely the space between the bottom electrode 2-3 and the silicon substrate 2-6 is called the cavity 2-9, the cavity 2-9 is used for achieving reflection of sound waves, and mechanical energy is limited in the film bulk acoustic wave resonator 2. The piezoelectric layer 2-2 is arranged on the upper surface of the bottom electrode 2-3, the top electrode 2-1 is arranged on the upper surface of the piezoelectric layer 2-2, the metal reflecting layer 3-3 is arranged on the upper surface of the top electrode 2-1, the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the top electrode 2-1 is connected with the upper end of the right through hole electrode 2-7. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the cavity 2-9 on the silicon substrate 2-6.
And (5) after the device obtained in the step S14 is packaged in the step S15, the prepared infrared detector further comprises a surrounding plate and an infrared window. The enclosure plate is provided on the readout integrated circuit substrate 1, and is adhered to the upper surface of the readout integrated circuit substrate 1 by, for example, a sealing adhesive. The infrared window is arranged on the enclosing plate and is positioned right above the metal array layer 3-1, and infrared light is allowed to penetrate through the infrared window to irradiate the surface of the metal array layer 3-1. The readout integrated circuit substrate 1, the surrounding plate and the infrared window form a sealed cavity together, and the sealed cavity provides a vacuum environment for the film bulk acoustic resonator 2, the metal reflecting layer 3-3, the dielectric layer 3-2 and the metal array layer 3-1 according to the requirements of working conditions.
Claims (10)
1. The preparation method of the polarization type infrared detector based on the film bulk acoustic resonator is characterized by comprising the following steps of:
s1, obtaining a silicon substrate (2-6);
s2, preparing left through holes (2-18), right through holes (2-17) and grooves (2-19) on the silicon substrate (2-6); the groove (2-19) is positioned on the upper surface of the silicon substrate (2-6), and the left through hole (2-18) and the right through hole (2-17) are respectively arranged at two sides of the groove (2-19) and penetrate through the upper surface and the lower surface of the silicon substrate (2-6);
s3, preparing a left through hole electrode (2-8) in the left through hole (2-18), preparing a right through hole electrode (2-7) in the right through hole (2-17), preparing a first electrode (2-4) at the lower end of the left through hole electrode (2-8) and the lower surface of the silicon substrate (2-6), and preparing a second electrode (2-5) at the lower end of the right through hole electrode (2-7) and the lower surface of the silicon substrate (2-6);
s4, filling the grooves (2-19) with a sacrificial layer material to prepare sacrificial layers (2-29), wherein the sacrificial layers (2-29) cover the upper surfaces of the silicon substrates (2-6), and the thickness of the sacrificial layers (2-29) is larger than the depth of the grooves (2-19);
s5, carrying out planarization treatment on the upper surface of the silicon substrate (2-6) until the upper surfaces of the sacrificial layer (2-29) and the silicon substrate (2-6) are coplanar;
s6, preparing a bottom electrode (2-3) on the upper surfaces of the silicon substrate (2-6) and the sacrificial layer (2-29) obtained in the S5; the bottom electrode (2-3) covers the sacrificial layer (2-29) obtained in the step S5, and the bottom electrode (2-3) is connected with the left through hole electrode (2-8);
s7, preparing a piezoelectric layer (2-2) on the upper surface of the bottom electrode (2-3);
s8, preparing a top electrode (2-1) on the upper surface of the piezoelectric layer (2-2); the top electrode (2-1) is connected with the right through hole electrode (2-7);
s9, preparing a metal reflecting layer (3-3) on the upper surface of the top electrode (2-1);
s10, preparing a dielectric layer (3-2) on the upper surface of the metal reflecting layer (3-3);
s11, preparing a metal array layer (3-1) on the upper surface of the dielectric layer (3-2); the metal array layer (3-1) is composed of a plurality of metal units (3-11) with consistent characteristic directions;
s12, etching the sacrificial layer (2-29) obtained in the step S5 to obtain a cavity (2-9), and finishing the preparation of the film bulk acoustic resonator (2);
s13, preparing a readout integrated circuit substrate (1);
s14, bonding the first electrode (2-4) and the second electrode (2-5) on the read-out integrated circuit substrate (1) to obtain the uncooled infrared detector, and completing the preparation.
2. The method for preparing a polarized infrared detector based on film bulk acoustic resonator according to claim 1, further comprising a step of packaging after S14.
3. The method for manufacturing a polarized infrared detector based on a film bulk acoustic resonator according to claim 2, wherein the step of packaging specifically comprises gluing a bounding wall on the substrate (1) of the readout integrated circuit, and gluing an infrared window on the top of the bounding wall, wherein the infrared window is located right above the metal array layer (3-1); the readout integrated circuit substrate (1), the surrounding plate and the infrared window form a sealed cavity.
4. The method for manufacturing a polarized infrared detector based on a thin film bulk acoustic resonator according to claim 1, wherein the readout integrated circuit substrate (1) in S13 comprises a substrate (1-3), a first substrate electrode (1-1) and a second substrate electrode (1-2) both disposed on the substrate (1-3) and connected to the substrate (1-3); in the step S14, the first electrode (2-4) and the second electrode (2-5) are bonded to the readout integrated circuit substrate (1), specifically, the first substrate electrode (1-1) is connected to the first electrode (2-4), and the second substrate electrode (1-2) is connected to the second electrode (2-5).
5. The method for preparing a polarized infrared detector based on film bulk acoustic resonator according to claim 1, wherein the projected area of the cavity (2-9) of S12 on the silicon substrate (2-6) is smaller than the projected area of the piezoelectric layer (2-2) on the silicon substrate (2-6).
6. The method for preparing a polarized infrared detector based on film bulk acoustic resonator according to claim 1, wherein the area of the lower surface of the dielectric layer (3-2) in S10 is smaller than or equal to the area of the upper surface of the metal reflective layer (3-3).
7. The thin film based bulk acoustic wave resonator of claim 1The preparation method of the polarization type infrared detector of the vibrator is characterized in that the material of the metal array layer (3-1) is Au, Ag or Al; the dielectric layer (3-2) is made of Ge or MgF2、SiO2Or AlN; the bottom electrode (2-3) and the top electrode (2-1) are made of Mo, W, Al, Pt or Ni; the piezoelectric layer (2-2) is made of AlN, ZnO or LiNbO3Or quartz; the left through hole electrodes (2-8), the right through hole electrodes (2-7), the first electrodes (2-4) and the second electrodes (2-5) are made of Au, Cu or Ni.
8. The method for preparing the polarized infrared detector based on the film bulk acoustic resonator according to claim 1, wherein the left through holes (2-18) and the right through holes (2-17) are prepared by deep silicon ion reactive etching; the grooves (2-19) are prepared by dry etching or wet etching; the left through hole electrode (2-8), the right through hole electrode (2-7), the first electrode (2-4) and the second electrode (2-5) are prepared by adopting an electroplating method; the bottom electrode (2-3) and the top electrode (2-1) are both prepared by adopting a magnetron sputtering process; the piezoelectric layer (2-2) is prepared by adopting a vapor phase chemical deposition method; the metal reflecting layer (3-3) is prepared by adopting a sputtering or vacuum evaporation method; the dielectric layer (3-2) is prepared by adopting a sputtering or vacuum evaporation method; the metal array layer (3-1) is prepared by adopting a photoetching process; the cavity (2-9) is prepared by adopting a method of wet etching the sacrificial layer (2-29) by adopting HF solution or dry etching the sacrificial layer (2-29) by adopting gaseous HF; the bonding is metal thermocompression bonding.
9. The uncooled infrared detector manufactured by the manufacturing method of any one of claims 1 to 8.
10. Uncooled infrared detector according to claim 9, characterized in that the uncooled infrared detector comprises a first connection layer (4) and a second connection layer (5), the top electrode (2-1) being connected to the metal reflection layer (3-3) through the first connection layer (4), and the read-out integrated circuit substrate (1) being connected to the silicon substrate (2-6) through the second connection layer (5).
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| CN111628744A (en) * | 2020-05-06 | 2020-09-04 | 河源市众拓光电科技有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN115966865A (en) * | 2022-12-29 | 2023-04-14 | 中国电子科技集团公司第二十六研究所 | MEMS filter generating out-of-band zero point based on three-dimensional stacking and manufacturing method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040095819A (en) * | 2003-04-28 | 2004-11-16 | 엘지전자 주식회사 | Environmental sensor using film bulk acoustic resonator |
| CN1677705A (en) * | 2004-03-31 | 2005-10-05 | 株式会社东芝 | Electronic component, electronic component module and mfg. method for said electronic component |
| CN1929302A (en) * | 2005-09-09 | 2007-03-14 | 株式会社东芝 | Film bulk acoustic resonator and method for manufacturing the same |
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN102226719A (en) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | Infrared absorption structure and uncooled infrared detector based on infrared absorption structure |
| CN102830069A (en) * | 2012-08-17 | 2012-12-19 | 中国计量学院 | Alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and method thereof |
| CN103413795A (en) * | 2013-08-28 | 2013-11-27 | 天津大学 | Semiconductor device packing structure and semiconductor device packing technological process |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
| CN104792420A (en) * | 2014-01-22 | 2015-07-22 | 北京大学 | Optical readout focal plane array and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10461719B2 (en) * | 2009-06-24 | 2019-10-29 | Avago Technologies International Sales Pte. Limited | Acoustic resonator structure having an electrode with a cantilevered portion |
-
2018
- 2018-11-12 CN CN201811340894.3A patent/CN109502540B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040095819A (en) * | 2003-04-28 | 2004-11-16 | 엘지전자 주식회사 | Environmental sensor using film bulk acoustic resonator |
| CN1677705A (en) * | 2004-03-31 | 2005-10-05 | 株式会社东芝 | Electronic component, electronic component module and mfg. method for said electronic component |
| CN1929302A (en) * | 2005-09-09 | 2007-03-14 | 株式会社东芝 | Film bulk acoustic resonator and method for manufacturing the same |
| CN101895269A (en) * | 2010-07-30 | 2010-11-24 | 中国科学院声学研究所 | Method for preparing piezoelectric film bulk acoustic wave resonator |
| CN102226719A (en) * | 2011-04-08 | 2011-10-26 | 华中科技大学 | Infrared absorption structure and uncooled infrared detector based on infrared absorption structure |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN102830069A (en) * | 2012-08-17 | 2012-12-19 | 中国计量学院 | Alcohol concentration measuring device by using terahertz anisotropic medium resonance effect and method thereof |
| CN103413795A (en) * | 2013-08-28 | 2013-11-27 | 天津大学 | Semiconductor device packing structure and semiconductor device packing technological process |
| CN104792420A (en) * | 2014-01-22 | 2015-07-22 | 北京大学 | Optical readout focal plane array and preparation method thereof |
| CN104030234A (en) * | 2014-06-04 | 2014-09-10 | 江苏艾伦摩尔微电子科技有限公司 | MEMS (Micro Electro Mechanical System) infrared sensor based on film bulk acoustic resonator and preparation method of MEMS infrared sensor |
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