CN109459144B - Wide-spectrum infrared sensor based on piezoelectric effect and composite plasmon - Google Patents
Wide-spectrum infrared sensor based on piezoelectric effect and composite plasmon Download PDFInfo
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon relates to the technical field of infrared sensing, solves the problems of low absorption rate and limited broadband absorption bandwidth in the prior art, and comprises a readout integrated circuit substrate, a micro-electromechanical resonator, a dielectric layer and a metal array layer which are sequentially connected, wherein the metal array layer comprises a plurality of metal units, and each metal unit is composed of at least three metal blocks with different sizes. According to the uncooled infrared sensor, the dielectric layer and the metal array layer are integrated on the surface of the FBAR, so that the uncooled infrared sensor can enhance absorption of infrared spectrum, the absorption rate is improved from 20% to more than 80%, meanwhile, broadband absorption is realized, the manufacturing is simple, and the sensing performance of the infrared sensor is excellent; the integrated readout circuit is integrated on an integrated readout circuit substrate through FBAR (film bulk ar) and the like, can be integrally manufactured and produced in batches, and has low cost; the sensor has the advantages of the traditional uncooled infrared sensing, and is quick in response and high in sensing sensitivity.
Description
Technical Field
The invention relates to the technical field of infrared sensing, in particular to a wide-spectrum infrared sensor based on a piezoelectric effect and a composite plasmon.
Background
Infrared sensors are generally classified into two types, i.e., a refrigeration type and a non-refrigeration type, according to the temperature at which they operate. The refrigeration-type infrared sensor is generally made of a semiconductor material. By using the photoelectric effect of some materials, the photosensitive material absorbs photons to cause the change of electrical parameters. In order to suppress hot carriers and noise, the operating temperature of the refrigeration-type infrared sensor is usually below 77K. The need for refrigeration, such as with a refrigerator or liquid nitrogen, results in a relatively large volume and weight, as well as a relatively high price. The non-refrigeration type infrared sensor is also called as a room temperature sensor, can work under the room temperature condition without refrigeration, and has the advantages of being easier to carry and the like. Uncooled infrared sensors are typically thermal sensors, i.e., operate by sensing the thermal effect of infrared radiation. The uncooled infrared sensor has advantages over the refrigeration type infrared sensor in aspects of volume, weight, service life, cost, power consumption, starting speed, stability and the like because a refrigeration mechanism with large volume and high price is omitted. But has a difference in response time and sensing sensitivity compared with the refrigeration type infrared sensor.
In recent years, with the development of micro-nano sensing technology, the application of micro-electromechanical resonators (FBARs) is also expanded to the field of uncooled infrared sensors due to the piezoelectric effect of the FBARs. On one hand, FBARs are usually of miniature size and are more resistant to external interference; on the other hand, FBARs usually work in resonance simulation and have a very high quality factor, so the device exhibits a very high sensitivity; the two aspects promote that the uncooled infrared sensor based on the piezoelectric effect shows excellent signal-to-noise ratio index. In addition, the micro-electromechanical resonator adopts a frequency reading circuit mode, and the mode can effectively inhibit flicker noise (1/f noise).
However, the sensitive surface of the microelectromechanical resonator has a low absorption of infrared radiation, typically less than 20%, and is not selective to the incident spectrum. Resulting in a low absorption of infrared radiation by uncooled infrared sensors based on the piezoelectric effect.
Meanwhile, the uncooled infrared sensor based on the piezoelectric effect mainly faces the problem that the infrared radiation absorption bandwidth is limited, and the performance of the uncooled infrared sensor can be improved through the broadband absorption of the absorption layer. At present, the absorption bandwidth is increased by adopting a multilayer structure for absorption, and the absorption bandwidth of an absorption layer is widened by splicing different absorption spectrum bands of different layers, which specifically comprises the following steps: different materials are adopted to prepare the absorption layer, but the method is limited by material preparation stress, the material selection range is limited, and the performance of the infrared sensor is influenced by increasing the thickness of the absorption layer; the multilayer microbridge structure is adopted, however, the absorption width is limited due to the limitation of process difficulty and the limited number of stacked layers, and in addition, the method greatly improves the process complexity and reduces the reliability of the infrared sensor.
Disclosure of Invention
In order to solve the problems, the invention provides a wide-spectrum infrared sensor based on a piezoelectric effect and a composite plasmon.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon comprises a micro-electromechanical resonator, a readout integrated circuit substrate connected with the micro-electromechanical resonator, a dielectric layer positioned on the upper surface of the micro-electromechanical resonator and a metal array layer positioned on the upper surface of the dielectric layer, wherein the metal array layer comprises a plurality of metal units, and each metal unit is composed of at least three metal blocks with different sizes.
The invention has the beneficial effects that:
1. by integrating the structure of the dielectric layer and the metal array layer on the surface of the micro-electromechanical resonator, the metal array layer is utilized to realize enhanced absorption of infrared spectrum, and absorbed energy acts on the micro-electromechanical resonator, so that the problem of low absorption rate of the sensitive surface of the micro-electromechanical resonator on infrared radiation is solved, and the absorption rate of the uncooled infrared sensor is improved to more than 80%.
2. The wide-band absorption is realized through the metal array layer comprising at least three metal blocks with different sizes, the problem that the infrared radiation absorption bandwidth of the uncooled infrared sensor is limited is solved, meanwhile, the preparation of the metal array layer can be realized by adopting one material, the thickness of the absorption layer or the number of stacked layers is not required to be increased, the absorption width is easy to adjust and expand, the process is simple to manufacture, and the corresponding infrared sensor has excellent, stable and reliable infrared sensing performance.
3. The uncooled infrared sensor is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure.
4. The invention integrates the micro-electromechanical resonator, the dielectric layer and the metal array layer on the reading integrated circuit substrate, thereby having the advantages of integrated manufacture, batch production, low cost and the like.
5. The wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigerated infrared sensor.
Drawings
Fig. 1 is a schematic structural diagram of an uncooled infrared sensor of the present invention.
Fig. 2 is a schematic structural diagram of a readout integrated circuit substrate of the uncooled infrared sensor of the present invention.
Fig. 3 is a specific structure diagram of the metal array layer of the uncooled infrared sensor of the present invention.
Fig. 4 is another detailed structural view of the metal array layer of the uncooled infrared sensor of the present invention.
Fig. 5 is a schematic structural diagram of a micro-electromechanical resonator of the uncooled infrared sensor of the present invention.
Fig. 6 is a state diagram corresponding to the manufacturing process S1 of the uncooled infrared sensor of the present invention.
Fig. 7 is a state diagram corresponding to the manufacturing process S2 of the uncooled infrared sensor of the present invention.
Fig. 8 is a state diagram corresponding to S3 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 9 is a state diagram corresponding to S4 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 10 is a state diagram corresponding to the manufacturing process S5 of the uncooled infrared sensor of the present invention.
Fig. 11 is a state diagram corresponding to S6 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 12 is a state diagram corresponding to S7 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 13 is a state diagram corresponding to S8 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 14 is a state diagram corresponding to S9 of a manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 15 is a state diagram corresponding to S10 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 16 is a state diagram corresponding to S11 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 17 is a state diagram corresponding to S12 of the manufacturing process of the uncooled infrared sensor of the present invention.
Fig. 18 is a state diagram corresponding to S13 of the manufacturing process of the uncooled infrared sensor of the present invention.
In the figure: 1. the readout integrated circuit comprises a readout integrated circuit substrate, 1-1, a first substrate electrode, 1-2, a second substrate electrode, 1-3, a substrate, 2, a micro-electromechanical resonator, 2-1, a top electrode, 2-.2, a piezoelectric layer, 2-3, a bottom electrode, 2-4, a first electrode, 2-5, a second electrode, 2-6, a silicon substrate, 2-7, a right through hole electrode, 2-8, a left through hole electrode, 2-9, a cavity, 2-17, a right through hole, 2-18, a left through hole, 2-19, a groove, 2-29, a sacrificial layer, 3, a dielectric layer, 4, a metal array layer, 4-1, a metal unit, 5 and a connecting layer.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
As shown in fig. 1, the infrared sensor further includes a readout integrated circuit substrate 1 (also called ROIC substrate), a micro-electromechanical resonator 2, a dielectric layer 3, and a metal array layer 4, the readout integrated circuit substrate 1, the micro-electromechanical resonator 2, the dielectric layer 3, and the metal array layer 4 are sequentially connected, the micro-electromechanical resonator 2 is located on the readout integrated circuit substrate 1, the dielectric layer 3 is located on the upper surface of the micro-electromechanical resonator 2, and the metal array layer 4 is located on the upper surface of the dielectric layer 3. The metal array layer 4 includes a plurality of metal units 4-1, and each metal unit 4-1 is composed of at least three metal blocks with different sizes.
The invention provides a wide-spectrum infrared sensor based on a piezoelectric effect and a composite plasmon, and provides a non-refrigeration infrared sensor structure based on a dielectric layer 3, a metal array layer 4 and a micro-electromechanical resonator 2 technology, wherein the composite plasmon comprises the dielectric layer 3 and the metal array layer 4. The sensing mechanism is that the metal array layer 4 and the dielectric layer 3 are used for realizing the enhanced absorption of the infrared spectrum, the absorbed energy acts on the micro-electromechanical resonator 2, and the infrared radiation amount is deduced by detecting the change of the electrical parameters of the micro-electromechanical resonator 2. According to the invention, the structure of the dielectric layer 3 and the metal array layer 4 is integrated on the surface of the micro-electromechanical resonator 2, so that the problem of low infrared radiation absorption rate of the sensitive surface of the micro-electromechanical resonator 2 is solved, the absorption rate of the uncooled infrared sensor is improved to more than 80%, and the selectivity of the uncooled infrared sensor to an incident spectrum is increased. Meanwhile, the metal array layer 4 comprises a plurality of repeated metal units 4-1, each metal unit 4-1 is composed of a plurality of (more than two) metal block structures with different sizes, the metal blocks with different sizes correspond to different absorption wave peaks, the plurality of absorption wave peaks are superposed to achieve the effect of broadband absorption, therefore, the problem that the infrared radiation absorption bandwidth of the uncooled infrared sensor is limited is solved by integrating the metal array layer 4 on the surface of the micro-electromechanical resonator 2, the uncooled infrared sensor is different from a mode of increasing the absorption bandwidth by adopting a multi-layer structure for absorption, the preparation of the metal array layer 4 can be realized by adopting a material to change the size of the metal block without increasing the thickness of the absorption layer or stacking the layers, the absorption width is easy to adjust and widen, the process is simple to manufacture, and meanwhile, the infrared sensor has excellent, stable and reliable infrared sensing performance. In addition, the uncooled infrared sensor provided by the invention is of a thin film structure, and has obvious advantages in the aspects of anti-seismic performance, pixel consistency and the like compared with the uncooled infrared sensor of a traditional micro-bridge structure. The micro-electromechanical resonator 2, the dielectric layer 3 and the metal array layer 4 are integrated on the readout integrated circuit substrate 1, so that the readout integrated circuit substrate has the advantages of integrated manufacturing, batch production, low cost and the like. The uncooled infrared sensor has the advantages of low cost, miniaturization, high stability and long service life of the traditional uncooled infrared sensor, and also has the advantages of quick response and high sensing sensitivity of the refrigeration type infrared sensor.
The above-mentioned read-out integrated circuit substrate 1 and the microelectromechanical resonator 2 may be connected directly or via a connection layer 5, said connection layer 5 being a connection electrode. The readout integrated circuit substrate 1 includes a substrate 1-3, two substrate electrodes, referred to as a first substrate electrode 1-1 and a second substrate electrode 1-2, respectively, disposed on the substrate 1-3 and connecting the substrate 1-3, as shown in fig. 2. The function of the read-out integrated circuit substrate 1 is to read the electrical signals of the microelectromechanical resonator 2. The read-out integrated circuit substrate 1 generally operates in the radio frequency band, and more specifically, the read-out integrated circuit substrate 1 operates in a band (about 1GHz to 3GHz) near the resonance frequency of the microelectromechanical resonator 2.
The material of the metal array layer 4 is usually Au, Ag, Al, etc., but is not limited to these three metals; the metal array layer 4 can be fabricated by conventional semiconductor process and electron beam lithography. The material of the dielectric layer 3 is Ge or MgF2、SiO2Or AlN, etc., but is not limited to these materials. Fig. 3 and 4 are examples of two structures of the metal array layer 4 on the dielectric layer 3, but not limited to fig. 3 and 4, and as shown in fig. 3 and 4, by designing an array structure in which each metal unit 4-1 includes four metal blocks with different sizes, a broadband enhanced absorption of infrared radiation is achieved, where the area outlined by the dotted line in fig. 3 is the metal unit 4-1, the metal blocks in the metal unit 4-1 are squares (square in cross section), and the metal blocks in fig. 4 are crosses (cross section).
The micro-electromechanical resonator 2 comprises a silicon substrate 2-6, a cavity 2-9, a bottom electrode 2-3, a piezoelectric layer 2-2, a top electrode 2-1, a left through hole electrode 2-8, a right through hole electrode 2-7, a first electrode 2-4 and a second electrode 2-5, and the specific structure is shown in FIG. 5. The silicon substrate 2-6 is provided with a left through hole 2-18 and a right through hole 2-17, the left through hole electrode 2-8 is positioned in the left through hole 2-18, the left through hole electrode 2-8 fills the left through hole 2-18, the right through hole electrode 2-7 is positioned in the right through hole 2-17, and the right through hole electrode 2-7 fills the right through hole 2-17. The first electrode 2-4 and the second electrode 2-5 are both arranged on the lower surface of the silicon substrate 2-6, the first electrode 2-4 is connected with the lower end of the left through hole electrode 2-8 and can be formed by integrally forming the first electrode 2-4 and the left through hole electrode 2-8, and the second electrode 2-5 is connected with the lower end of the right through hole electrode 2-7 and can be formed by integrally forming the second electrode 2-5 and the right through hole electrode 2-7. The first electrode 2-4 is connected with a first substrate electrode 1-1 of the readout integrated circuit substrate 1, the second electrode 2-5 is connected with a second substrate electrode 1-2 of the readout integrated circuit substrate 1, the left through hole electrode 2-8 is communicated with the readout integrated circuit substrate 1 through the first electrode 2-4, and the right through hole electrode 2-7 is communicated with the readout integrated circuit substrate 1 through the second electrode 2-5. The cavity 2-9 is located on the upper surface of the silicon substrate 2-6, the bottom electrode 2-3 is arranged on the cavity 2-9 and the silicon substrate 2-6, the cavity 2-9 is located between the bottom electrode 2-3 and the silicon substrate 2-6, the bottom electrode 2-3 covers the cavity 2-9, namely the projection area of the cavity 2-9 on the silicon substrate 2-6 is smaller than the projection area of the bottom electrode 2-3 on the silicon substrate 2-6, namely the space between the bottom electrode 2-3 and the silicon substrate 2-6 is called the cavity 2-9, the cavity 2-9 is used for achieving reflection of acoustic waves, and mechanical energy is limited in the micro-electromechanical resonator 2. The piezoelectric layer 2-2 is arranged on the upper surface of the bottom electrode 2-3, the top electrode 2-1 is arranged on the upper surface of the piezoelectric layer 2-2, the top electrode 2-1 is connected with the dielectric layer 3, namely the dielectric layer 3 is arranged on the upper surface of the top electrode 2-1, the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the top electrode 2-1 is connected with the upper end of the right through hole electrode 2-7. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the cavity 2-9 on the silicon substrate 2-6.
The bottom electrode 2-3 and the top electrode 2-1 are usually made of Mo, W, Al, Pt or Ni. The piezoelectric layer 2-2 is usually AlN, ZnO or LiNbO3Or quartz, etc. The right through-hole electrode 2-7, the left through-hole electrode 2-8, the first electrode 2-4 and the second electrode 2-5 are usually made by electroplating process, and the material can be selected from Au, Cu or Ni, but not limited to these materials.
The infrared sensor of the invention also comprises a coaming and an infrared window. The enclosure plate is provided on the readout integrated circuit substrate 1, and is adhered to the upper surface of the readout integrated circuit substrate 1 by, for example, a sealing adhesive. The infrared window is arranged on the enclosing plate and is positioned right above the metal array layer 4, and infrared light is allowed to penetrate through the infrared window to irradiate the surface of the metal array layer 4. The readout integrated circuit substrate 1, the surrounding plate and the infrared window jointly form a sealed cavity, and the sealed cavity provides a vacuum environment for the micro-electromechanical resonator 2, the dielectric layer 3 and the metal array layer 4 according to the requirements of working conditions.
According to the wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon, the invention provides a preparation method of the wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon. The method comprises the following specific steps:
s1, obtaining a silicon substrate 2-6
As shown in fig. 6, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-polished silicon wafers commonly used in the semiconductor industry.
S2, preparing left through holes 2-18, right through holes 2-17 and grooves 2-19 on silicon substrates 2-6
As shown in fig. 7, left via hole 2-18, right via hole 2-17 and groove 2-19 are prepared on silicon substrate 2-6 (in S11, groove 2-19 cooperates with bottom electrode 2-3 to become cavity 2-9). The process for making the left vias 2-18 and the right vias 2-17 typically uses deep silicon ion reactive etching (DRIE). The preparation process of the grooves 2-19 can adopt dry etching or wet etching.
S3, manufacturing a conductive electrode
As shown in fig. 8, a left through-hole electrode 2-8 is formed in the left through-hole 2-18, a right through-hole electrode 2-7 is formed in the right through-hole 2-17, a first electrode 2-4 is formed at the lower end of the left through-hole electrode 2-8 and on the lower surface of the silicon substrate 2-6, and a second electrode 2-5 is formed at the lower end of the right through-hole electrode 2-7 and on the lower surface of the silicon substrate 2-6. The left through-hole electrode 2-8, the right through-hole electrode 2-7, the first electrode 2-4 and the second electrode 2-5 are usually prepared by electroplating, and the electroplating material can be Cu, Au or Ni.
S4, filling the grooves 2-19 with a sacrificial material
As shown in fig. 9, a first sacrificial layer is deposited on the upper surface of the silicon substrate 2-6, and the first sacrificial layer covers the grooves 2-19 and the upper surface of the silicon substrate 2-6. The thickness of the first sacrificial layer is larger than the depth of the recesses 2-19. The material of the first sacrificial layer is usually borosilicate glass. The first sacrificial layer and the second sacrificial layer described below are collectively referred to as sacrificial layers 2-29.
S5, grinding the upper surfaces of the silicon substrates 2-6 to be flat
As shown in fig. 10, the upper surfaces of the silicon substrates 2 to 6 are subjected to a planarization process. Planarization is usually performed by chemical mechanical polishing. After the silicon substrates 2-6 are flattened, the left through hole electrodes 2-8 and the right through hole electrodes 2-7 are exposed on the upper surfaces of the silicon substrates 2-6, the first sacrificial layers are called second sacrificial layers after being flattened, the second sacrificial layers only exist in the grooves 2-19, and the upper surfaces of the second sacrificial layers are coplanar with the upper surfaces of the silicon substrates 2-6.
S6, preparing a bottom electrode 2-3
As shown in fig. 11, a bottom electrode 2-3 is prepared on the upper surface of the silicon substrate 2-6 and the upper surface of the second sacrificial layer after completion of S5. One end of the bottom electrode 2-3 is connected with the upper end of the left through hole electrode 2-8, and the bottom electrode 2-3 covers the second sacrificial layer. The bottom electrode 2-3 is typically prepared by a magnetron sputtering process.
S7, preparing a piezoelectric layer 2-2
As shown in fig. 12, a piezoelectric layer 2-2 is prepared on the upper surface of the bottom electrode 2-3. Preferably, the projected area of the piezoelectric layer 2-2 on the silicon substrate 2-6 is larger than the projected area of the groove 2-19 (i.e., the cavity 2-9 of S11) on the silicon substrate 2-6. The piezoelectric layer 2-2 is typically prepared by vapor phase chemical deposition.
S8, preparing a top electrode 2-1
As shown in fig. 13, a top electrode 2-1 is prepared on the upper surface of the piezoelectric layer 2-2. One end of the top electrode 2-1 is connected with the right through hole electrode 2-7. The top electrode 2-1 is typically prepared by a magnetron sputtering process.
S9, preparing a dielectric layer 3
As shown in fig. 14, a dielectric layer 3 is prepared on the upper surface of the top electrode 2-1. The dielectric layer 3 is generally prepared by a sputtering or vacuum evaporation process. The area of the dielectric layer 3 is generally smaller than or equal to the area of the top electrode 2-1, and the area of the lower surface of the dielectric layer 3 is smaller than or equal to the area of the upper surface of the top electrode 2-1.
S10, preparing a metal array layer 4
As shown in fig. 15, a metal array layer 4 is prepared on the upper surface of the dielectric layer 3. The metal array layer 4 can be formed by photolithography, electron beam lithography, lift-off, or other processes.
S11, etching the sacrificial layer 2-29 to obtain the cavity 2-9
As shown in fig. 16, the second sacrificial layer is released to obtain the cavity 2-9, that is, the micro-electromechanical resonator 2 is obtained, and at this time, the dielectric layer 3 and the micro-electromechanical resonator 2 are in a connected state. The cavities 2-9 can be obtained by wet etching the second sacrificial layer with an HF solution or dry etching the second sacrificial layer with gaseous HF.
S12, preparing a readout integrated circuit substrate 1
As shown in fig. 17, a readout integrated circuit substrate 1 is prepared.
S13 bonding the readout integrated circuit substrate 1 and the micro-electromechanical resonator 2
As shown in fig. 18, the micro-electromechanical resonator 2 is connected to the readout integrated circuit substrate 1 by means of bonding, and the uncooled infrared sensor is obtained. I.e. the first substrate electrode 1-1 and the first electrode 2-4 are connected and the second substrate electrode 1-2 and the second electrode 2-5 are connected. The two substrate electrodes may be connected to the first electrode 2-4 and the second electrode 2-5 on the microelectromechanical resonator 2 via a connection layer 5. The bonding method generally adopts a metal thermocompression bonding process.
S14, packaging
The resulting device of S14 is packaged. The enclosing plate is glued on the read integrated circuit substrate 1, the infrared window is glued to the upper part of the enclosing plate, and the read integrated circuit substrate 1, the enclosing plate and the infrared window form a sealed cavity. The coaming can adopt a silicon wafer, a glass sheet or a ceramic packaging structure and the like. The sealed cavity can be vacuumized according to the requirements of the micro-electromechanical resonator 2, the dielectric layer 3 and the metal array layer 4. The preparation is finished.
The manufacturing method integrates the micro-electromechanical resonator 2, the dielectric layer 3 and the metal array layer 4 on the readout integrated circuit substrate 1 through an MEMS micro-processing method, so that the manufacturing method has the advantages of integrated manufacturing, batch production, low cost and the like.
Claims (5)
1. The wide-spectrum infrared sensor based on the piezoelectric effect and the composite plasmon comprises a micro-electromechanical resonator (2) and is characterized by further comprising a readout integrated circuit substrate (1) connected with the micro-electromechanical resonator (2), a dielectric layer (3) located on the upper surface of the micro-electromechanical resonator (2) and a metal array layer (4) located on the upper surface of the dielectric layer (3), wherein the metal array layer (4) comprises a plurality of metal units (4-1), and each metal unit (4-1) is composed of at least three metal blocks with different sizes;
the readout integrated circuit substrate (1) comprises two substrates (1-3) and two substrate electrodes, wherein the two substrate electrodes are positioned on the upper surface of the substrate (1-3), and the substrate electrodes are connected with the substrate (1-3) and the micro-electromechanical resonator (2);
the micro-electromechanical resonator (2) comprises a silicon substrate (2-6), a cavity (2-9), a bottom electrode (2-3), a piezoelectric layer (2-2), a top electrode (2-1), a left through hole electrode (2-8), a right through hole electrode (2-7), a first electrode (2-4) and a second electrode (2-5), wherein the first electrode (2-4) and the second electrode (2-5) are located on the lower surface of the silicon substrate (2-6) and are connected with the two substrate electrodes in a one-to-one correspondence manner, the left through hole electrode (2-8) and the right through hole electrode (2-7) are located in the silicon substrate (2-6) and are connected with the first electrode (2-4) and the second electrode (2-5) in a one-to-one correspondence manner, the bottom electrode (2-3) is connected with the left through hole electrode (2-8) and is located on the silicon substrate (2-6, the cavity (2-9) is located between the silicon substrate (2-6) and the bottom electrode (2-3), the projection area of the cavity (2-9) on the silicon substrate (2-6) is smaller than the projection area of the bottom electrode (2-3) on the silicon substrate (2-6), the piezoelectric layer (2-2) is arranged on the upper surface of the bottom electrode (2-3), the top electrode (2-1) is arranged on the upper surface of the piezoelectric layer (2-2) and connected with the right through hole electrode (2-7), and the dielectric layer (3) is arranged on the upper surface of the top electrode (2-1).
2. The wide-spectrum infrared sensor based on piezoelectric effect and composite plasmon of claim 1, wherein the projection area of the piezoelectric layer (2-2) on the silicon substrate (2-6) is larger than the projection area of the cavity (2-9) on the silicon substrate (2-6).
3. The wide-spectrum infrared sensor based on piezoelectric effect and composite plasmon according to claim 1, characterized in that the material of the metal array layer (4) is Au, Ag or Al; the dielectric layer (3) is made of Ge and MgF2、SiO2Or AlN; the bottom electrode (2-3) and the top electrode (2-1) are made of Mo, W, Al, Pt or Ni; the material of the piezoelectric layer (2-2) isAlN、ZnO、LiNbO3Or quartz; the left through hole electrodes (2-8), the right through hole electrodes (2-7), the first electrodes (2-4) and the second electrodes (2-5) are made of Au, Cu or Ni.
4. The wide-spectrum piezoelectric effect and composite plasmon-based infrared sensor according to claim 1, wherein the infrared sensor further comprises a surrounding plate disposed on the readout integrated circuit substrate (1) and an infrared window disposed on the surrounding plate, the infrared window is located right above the metal array layer (4), and the readout integrated circuit substrate (1), the surrounding plate and the infrared window together form a sealed cavity.
5. The wide-spectrum piezoelectric effect and composite plasmon-based infrared sensor according to claim 1, wherein the infrared sensor further comprises a connection layer (5), and the readout integrated circuit substrate (1) is connected to the microelectromechanical resonator (2) through the connection layer (5).
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| CN111092605B (en) * | 2019-12-31 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with acoustic interference array, bulk acoustic wave resonator group, filter and electronic equipment |
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