CN103575407A - Terahertz radiation detector - Google Patents
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- CN103575407A CN103575407A CN201210250321.8A CN201210250321A CN103575407A CN 103575407 A CN103575407 A CN 103575407A CN 201210250321 A CN201210250321 A CN 201210250321A CN 103575407 A CN103575407 A CN 103575407A
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Abstract
The invention provides a terahertz radiation detector. The terahertz radiation detector comprises a terahertz sensitive structure and a substrate chip including a reading circuit, wherein the terahertz sensitive structure comprises a terahertz absorption structure, a heat conversion layer and a protection layer, when passive/active terahertz waves are focused on the terahertz sensitive structure through a terahertz object lens, absorbed energy is converted into heat energy through the terahertz absorption structure, the heat energy is converted into an electric signal through the heat conversion layer, and the electric signal is read through the reading circuit on the substrate chip. According to the terahertz radiation detector, a terahertz micro-bolometer micro-bolometer operates under a non-refrigeration environment, single point detection can be carried out, terahertz imaging can further be realized through a focal plane array.
Description
Technical field
The invention belongs to Terahertz (THz-Terahertz) and survey and microelectromechanical systems (MEMS-microelectronic mechainical systems) technical field, particularly relate to a kind of technology of utilizing micro-metering bolometer (Microbolometer) to carry out terahertz detection.
Background technology
THz wave typically refers to the electromagnetic radiation of frequency within the scope of 0.1THz-10THz.In recent years, Terahertz Technology causes that people pay close attention to widely just gradually, and has the development of advancing by leaps and bounds.Because THz wave has very high spatial resolution and temporal resolution, so terahertz imaging and THz wave spectral technology become two main gordian techniquies of Terahertz application.On the one hand, because Terahertz energy is very low, therefore can not produce destruction to material.On the other hand, tera-hertz spectra not only signal to noise ratio (S/N ratio) is high, can be rapidly to sample composition, make and analyze and differentiate, and Terahertz Technology can carry out non-cpntact measurement, makes it aspect safety check and anti-terrorism, have very large application prospect.The passenger and the luggage that utilize terahertz electromagnetic wave can check to be open to the custom in airport, and the conventional rays safety detection apparatus on the current airport of comparing, this technology has more outstanding security.Current terahertz detection mainly adopts single-point to survey, and image taking speed is slow, and the image resolution ratio that obtains is low and system architecture complicated, bulky.Therefore, seeking a kind of can work at normal temperatures, realize terahertz detection device real-time, array detection, is development trend and the focus direction of current terahertz detector research.
Characteristic for terahertz wave band near infrared band, abroad start at present to pay close attention to and adopt improved non-refrigeration thermal infrared detector to carry out room temperature terahertz detection, mainly comprise the several types such as micro-metering bolometer, thermocouple and pyroelectric sensor, it surveys mechanism is to utilize sensitive material absorption terahertz emission to cause responsive unit to produce some can measure the change of electric property, converts sightless terahertz emission to detectable electrical signal.Along with the development of MEMS technology, the Novel hot effect detector that the micro-metering bolometer of take is representative does not need refrigeration, and there is good stability, the feature such as integrated level is high and cost is low and receiving publicity.Micro-metering bolometer is a kind of thermosensitive resistance type detector, after micro-metering bolometer absorption of electromagnetic radiation, cause temperature variation, and then cause that thermistor changes, utilize sensing circuit (ROIC-Readout Integrated Circuit) to read resistance variations, the electromagnetic radiance that can obtain answering in contrast.Current micro-metering bolometer type detector operates mainly in long wave infrared region, when carrying out terahertz detection, because the emittance of THz wave is very low, cause utilizing micro-metering bolometer type detector to carry out the sensitivity of terahertz detection also very low, cannot reach the requirement of application.
Summary of the invention
The object of this invention is to provide a kind of terahertz emission detector, mainly solve and utilize at present micro-metering bolometer to carry out the sensitivity problem of terahertz detection.This terahertz emission detector is to design Terahertz absorbing structure on micro-metering bolometer type detector, when passive/active THz wave focuses on terahertz detector by Terahertz object lens, Terahertz absorbing structure by design becomes heat energy by the Terahertz energy conversion of absorption, and then the thermistor on micro-metering bolometer type detector is changed, then by circuit, read the variable quantity of thermistor.
For achieving the above object, the present invention takes following technical scheme:
Described terahertz emission detector is comprised of Terahertz sensitive structure and the substrate base that contains sensing circuit, and described Terahertz sensitive structure can be one, can be also a plurality of, and a plurality of sensitive structures form Terahertz focal plane arrays (FPA)s, can carry out detection imaging.
Described Terahertz sensitive structure is unsettled micro-bridge structure, described micro-bridge structure is comprised of bridge floor, brachium pontis and anchor point, described brachium pontis connects bridge floor to anchor point, its function one is to form hanging structure for supporting bridge floor, thereby effectively suppress Terahertz sensitive structure, absorb the thermal loss after terahertz emission, improve device sensitivity.Another function is to realize being electrically connected to of sensitive structure and sensing circuit
Described bridge floor comprises the protective seam of Terahertz absorbing structure, hot conversion layer and protection Terahertz absorbing structure and hot conversion layer.
Described Terahertz absorbing structure is for absorbing terahertz emission and converting it into as heat energy form and then pass to the structure of hot conversion layer.Described Terahertz absorbing structure is positioned at above hot conversion layer.Described Terahertz absorbing structure is comprised of electricity isolated layer and Terahertz absorption layer.Described electricity isolated layer is comprised of one or more layers electrically insulating material, between hot conversion layer and Terahertz absorption layer, for Terahertz absorption layer and hot conversion layer are carried out to electricity isolation, is also the protective seam of hot conversion layer; Described Terahertz absorption layer, can be thin film material layer, can be also that multilayered film material stack forms, and described membraneous material can be thin metal layer, metamaterial structure, metallic compound, carbon nano-tube, Graphene, semiconductor medium material etc.Described metamaterial structure is comprised of Terahertz reflection horizon, layer of dielectric material and resonance structure.Described Terahertz reflection horizon is continuous metal film, is positioned at the orlop of super material absorbing structure.Described dielectric layer is being positioned between Terahertz reflection horizon and resonance structure, adopt the material of transmission Terahertz, described dielectric layer comprises organic polyphosphazene polymer meeting thing dielectric material, as polyimide, Parylene-C (ParyIene-C) etc., or semiconductor medium material, as silicon dioxide, silicon nitride and silit etc.Described resonance structure is to have single resonance structure or the periodicity resonance structure of strong resonance with target THz wave frequency range, described resonance structure can be closed ring type structure, the splitting ring structure of one-sided opening, one dimension or two-dimensional grid structure etc., the size of described resonance structure and grating constant are designed to sub-wavelength according to the requirement of surveying band wavelength, described resonance structure can adopt metal material, as gold, aluminium, silver, copper etc., also can adopt doped semiconductor materials, as the silicon of doping, germanium etc., also can be metal silicide materials, as titanium-silicon compound, cobalt and silicon compound, tungsten silicon compound etc.
Described hot conversion layer is thermally sensitive thermistor, in order to heat energy is converted into the electrical signal that can directly measure.Described thermistor adopts the material with high temperature coefficient of resistance, low-heat capacity rate and thermal conductivity and moderate resistance value.The material of described thermistor comprises vanadium oxide, amorphous silicon, polysilicon, polycrystalline silicon germanium, metal, high-temperature superconductor etc.
Described protective seam is positioned at the upper and lower surface of Terahertz absorbing structure and hot conversion layer; by one or more layers semiconductor medium material, formed; described semiconductor medium material can be monox, silicon nitride, mainly for the protection of Terahertz absorbing structure and hot conversion layer, is not subject to external environmental interference
Described brachium pontis is two sway braces that are arranged on bridge floor opposite side, its one end connecting bridge face, and the other end is connected with anchor point, supports bridge floor and forms hanging structure.Described brachium pontis is comprised of conductance layer and support protective seam.Described conductance layer be electric conductivity better but the poor membraneous material of heat conductivility, be mainly used in connecting hot conversion layer electrical signal to the sensing circuit on substrate base, and reduce as far as possible the heat that hot conversion layer absorbs and conduct to substrate, described conductance layer membraneous material can be the material of the high conductivity such as nickel, chromium, nickel-chrome, silicide, lower thermal conductivity.Described support protective seam is comprised of one or more layers semiconductor medium material; be positioned at the upper and lower surface of conductance layer; main in order to protect the conductance layer of brachium pontis; described semiconductor medium material can be monox, silicon nitride etc.; described support protective seam can be identical with bridge floor protective layer material; and can be by selecting different materials and thickness, the integrated stress of adjustment and balance micro-bridge structure.
Described anchor point is comprised of the good material of one or more layers electric conductivity, the metal or alloy materials such as described anchor point material can Al, Cu, Au, described anchor point one end is connected with brachium pontis conductance layer, the other end is connected with the signal read circuit of substrate base, makes the electric signal of hot conversion layer can be read out circuit and obtains and process.Described anchor point supports bridge floor and brachium pontis simultaneously, makes micro-bridge structure unsettled.
Described substrate base comprises metal level and signal read circuit.Described metallic reflector is positioned at substrate base upper surface, be mainly used in reflection from the THz wave of Terahertz sensitive structure transmissive, THz wave is reflected again and enter Terahertz sensitive structure, increase the absorption efficiency of Terahertz sensitive structure to terahertz emission, and then increase whole terahertz emission detector sensitivity.Described signal read circuit function is the change in resistance of reading thermistor, and faint electric signal is carried out to pre-service, as amplification, integration, filtering, sampling/maintenance etc., can also form the serial/parallel row conversion that Terahertz focal plane arrays (FPA) carries out array signal to a plurality of sensitive structures simultaneously, for signal subsequently, process inter-stage a good interface is provided.
In sum, the present invention utilizes MEMS technique, in conjunction with Terahertz high-level efficiency absorption approach, has proposed a kind of terahertz emission detector, and the present invention has following advantage:
1) the terahertz emission detector that the present invention proposes has that implementation method is simple, cost is low, with IC process compatible, be easy to the advantages such as miniaturization, can widespread use;
2) the terahertz emission detector that the present invention proposes can work under non-refrigeration condition;
3) the terahertz emission detector that the present invention proposes adopts Terahertz absorbing structure, can absorb to greatest extent Terahertz energy, and be converted into heat energy, effectively improves terahertz emission detector sensitivity;
Accompanying drawing explanation
Fig. 1 is the terahertz emission detector plan structure schematic diagram that the present invention proposes;
Fig. 2 is the terahertz emission detector cross-sectional view that the present invention proposes;
Fig. 3 is the terahertz emission detector array architecture schematic diagram that the present invention proposes;
In accompanying drawing, identical Reference numeral represents identical parts.
Wherein:
1-bridge floor; 2-brachium pontis; 3-anchor point; 4-Terahertz absorbing structure; 5-substrate base; 6-metallic reflector; 7-terahertz emission detector focal plane arrays (FPA); 8-signal read circuit; 101-protective seam; The hot conversion layer of 102-; 401-metallic reflector; 402-dielectric layer; 403-resonance structure; 201-brachium pontis isolation supporting layer; 202-brachium pontis conductance layer.
Embodiment:
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, structure of the present invention and implementation method are described in detail.
Described terahertz emission detector is comprised of Terahertz sensitive structure and the substrate base (5) that contains sensing circuit (8), described Terahertz sensitive structure can be one, also can be a plurality of, a plurality of sensitive structures form Terahertz focal plane arrays (FPA) (7), can carry out detection imaging.
Described Terahertz sensitive structure is earnestly empty micro-bridge structure, described micro-bridge structure is comprised of bridge floor (1), brachium pontis (2) and anchor point (3), described brachium pontis (2) connects bridge floor (1) to anchor point (3), the one, for supporting bridge floor (8), form hanging structure, thereby effectively suppress sensitive structure, absorb the thermal loss after terahertz emission, improve device sensitivity.Another purposes is to realize sensitive structure to comprise Terahertz absorbing structure (4), hot conversion layer (102) and the protective seam (101) of protecting Terahertz absorbing structure and hot conversion layer with the described bridge floor of being electrically connected to of sensing circuit.
Described Terahertz absorbing structure (4) is for absorbing terahertz emission and converting it into as heat energy form and then pass to the structure of hot conversion layer.Described Terahertz absorbing structure is positioned at hot conversion layer (102) above.Described Terahertz absorbing structure is comprised of electricity isolated layer (101) and Terahertz absorption layer.Described electricity isolated layer (101) is comprised of one or more layers electrically insulating material, is positioned between hot conversion layer (102) and Terahertz absorption layer, for Terahertz absorption layer and hot conversion layer (102) are carried out to electricity isolation; Described Terahertz absorption layer, can be formed by one or more layers membraneous material stack, and described membraneous material can be thin metal layer, metamaterial structure, metallic compound, carbon nano-tube, Graphene, semiconductor medium material etc.Described super material absorbing structure is comprised of Terahertz reflection horizon (401), dielectric layer (402) and resonance structure (403).Described Terahertz reflection horizon (401) is continuous metal film, is positioned at the orlop of super material absorbing structure.Described dielectric layer (402) is being positioned between Terahertz reflection horizon and resonance structure, adopt the material of transmission Terahertz, comprise organic polyphosphazene polymer meeting thing dielectric material, as polyimide, Parylene-C (Parylene-C) etc., or semiconductor medium material, as silicon dioxide, silicon nitride and silit etc.Described resonance structure (403) is to have single resonance structure or the periodicity resonance structure of strong resonance with target THz wave frequency range, described resonance structure can be closed ring type structure, the splitting ring structure of one-sided opening, one dimension or two-dimensional grid structure etc., the size of described resonance structure and grating constant are designed to sub-wavelength according to the requirement of surveying band wavelength, described resonance structure can adopt metal material, as gold, aluminium, copper etc., also can adopt doped semiconductor materials, as the silicon of doping, germanium etc., also can be metal silicide materials, as titanium-silicon compound, cobalt and silicon compound, tungsten silicon compound etc.
Described hot conversion layer (102) is thermally sensitive thermistor material, in order to heat energy is converted into the electrical signal that can directly measure.Described thermistor material is the material with high temperature coefficient of resistance, low-heat capacity rate and thermal conductivity and moderate resistance value.Described thermistor material can be the materials such as vanadium oxide, amorphous silicon, polysilicon, polycrystalline silicon germanium, metal, high-temperature superconductor.
Described protective seam (101) is positioned at the upper and lower surface of Terahertz absorbing structure and hot conversion layer (102); by one or more layers semiconductor medium material, formed; described semiconductor medium material can be monox, silicon nitride; mainly for the protection of Terahertz absorbing structure and hot conversion layer (102), be not subject to external environmental interference
Described brachium pontis (2) is two sway braces that are arranged on bridge floor opposite side, its one end connecting bridge face (1), and the other end is connected with anchor point (3), supports bridge floor and forms hanging structure.Described brachium pontis (2) is comprised of conductance layer (202) and support protective seam (201).Described conductance layer (202) be electric conductivity better but the poor membraneous material of heat conductivility, be mainly used in connecting hot conversion layer electrical signal to the sensing circuit on substrate base, and reduce as far as possible the heat that hot conversion layer absorbs and conduct to substrate (5), described conductance layer membraneous material can be the material of the high conductivity such as nickel, chromium, nickel-chrome, silicide, lower thermal conductivity.Described support protective seam (201) is comprised of one or more layers semiconductor medium material; be positioned at the upper and lower surface of conductance layer (202); main in order to protect the conductance layer (202) of brachium pontis; described semiconductor medium material can be monox, silicon nitride etc.; described support protective seam can be identical with bridge floor protective layer material; and can, by selecting the protective seam of different materials and thickness, adjust and balance micro-bridge structure integrated stress.
Described anchor point (3) is comprised of the good membraneous material of one or more layers electric conductivity, the metal or alloy materials such as described membraneous material can Al, Cu, Au, described anchor point one end is connected with brachium pontis conductance layer (201), the other end is connected with the signal read circuit (8) of substrate base, makes the electric signal of hot conversion layer can be read out circuit and obtains and process.Described anchor point (3) supports bridge floor (1) and brachium pontis (2) simultaneously, makes micro-bridge structure unsettled.
Described substrate base (5) comprises a metal level (6) and signal read circuit (8).Described metallic reflector (6) is positioned at substrate base (5) upper surface, be mainly used in reflection from the THz wave of Terahertz sensitive structure transmissive, THz wave is reflected again and enter Terahertz sensitive structure, increase the absorption efficiency of Terahertz sensitive structure to terahertz emission, and then increase whole terahertz emission detector sensitivity.Described signal read circuit (8) is the change in resistance of reading thermistor, and faint electric signal is carried out to pre-service, as amplification, integration, filtering, sampling/maintenance etc., can also form the serial/parallel row conversion that Terahertz focal plane arrays (FPA) carries out array signal to a plurality of sensitive structures simultaneously, for signal subsequently, process inter-stage a good interface is provided.
The terahertz emission panel detector structure that the present invention proposes as shown in Figure 1.Implementation method of the present invention is not limited to disclosed content in embodiment.
Claims (10)
1. a terahertz emission detector, is characterized in that: described terahertz emission detector is comprised of Terahertz sensitive structure and the substrate base that contains sensing circuit.
2. terahertz emission detector as claimed in claim 1, is characterized in that: described Terahertz sensitive structure is unsettled micro-bridge structure, and described micro-bridge structure is comprised of bridge floor, brachium pontis and anchor point.Described Terahertz sensitive structure can work independently, and also can form focal plane arrays (FPA) by a plurality of Terahertz sensitive structures, thereby carry out terahertz detection imaging.
3. micro-bridge structure as claimed in claim 2, is characterized in that: described bridge floor comprises the protective seam of Terahertz absorbing structure, hot conversion layer and protection Terahertz absorbing structure and hot conversion layer.
4. bridge floor as claimed in claim 3, is characterized in that: described Terahertz absorbing structure is positioned at above hot conversion layer.Described Terahertz absorbing structure is comprised of electricity isolated layer and Terahertz absorption layer.Described electricity isolated layer is comprised of one or more layers electrically insulating material, between hot conversion layer and Terahertz absorption layer; Described Terahertz absorption layer, can be thin film material layer, can be also that multilayered film material stack forms, and described membraneous material can be thin metal layer, metamaterial structure, metallic compound, carbon nano-tube, Graphene, semiconductor medium material etc.
5. Terahertz absorption layer as claimed in claim 4, is characterized in that: described metamaterial structure is comprised of Terahertz reflection horizon, layer of dielectric material and resonance structure.Described Terahertz reflection horizon is continuous metal film, is positioned at the orlop of metamaterial structure.Described layer of dielectric material is being positioned between Terahertz reflection horizon and resonance structure, adopt the material of transmission THz wave, described layer of dielectric material comprises organic macromolecule polymer material, as polyimide, Parylene-C (Parylene-C) etc., or semiconductor medium material, as silicon dioxide, silicon nitride and silit etc.Described resonance structure can be splitting ring structure, one dimension or the two-dimensional grid structure etc. of closed ring type structure, one-sided opening, the size of described resonance structure and grating constant are designed to sub-wavelength according to the requirement of surveying band wavelength, described resonance structure can adopt metal material, as gold, aluminium, silver, copper etc., also can adopt doped semiconductor materials, as the silicon of doping, germanium etc., can be also metal silicide materials, as titanium-silicon compound, cobalt and silicon compound, tungsten silicon compound etc.
6. bridge floor as claimed in claim 3, is characterized in that: described hot conversion layer is thermally sensitive thermistor.Described thermistor adopts the material with high temperature coefficient of resistance, low-heat capacity rate and thermal conductivity and moderate resistance value.The material of described thermistor comprises the materials such as vanadium oxide, amorphous silicon, polysilicon, polycrystalline silicon germanium, metal, high-temperature superconductor.
7. bridge floor as claimed in claim 3, is characterized in that: described protective seam is positioned at the upper and lower surface of Terahertz absorbing structure and hot conversion layer, one or more layers semiconductor medium material, consists of, and described semiconductor medium material can be monox, silicon nitride etc.
8. Terahertz sensitive structure as claimed in claim 2, is characterized in that: described brachium pontis is two sway braces that are arranged on bridge floor opposite side, its one end connecting bridge face, and the other end is connected with anchor point.Described brachium pontis is comprised of conductance layer and support protective seam.Described conductance layer is that electric conductivity is better, but the poor membraneous material of heat conductivility, described conductance layer can be the membraneous material of the high conductivity such as nickel, chromium, nickel-chrome, silicide, lower thermal conductivity.Described support protective seam is comprised of one or more layers semiconductor medium material, is positioned at the upper and lower surface of conductance layer, and described semiconductor medium material can be monox, silicon nitride etc., and described support protective seam can be identical with bridge floor protective layer material.
9. Terahertz sensitive structure as claimed in claim 2, it is characterized in that: described anchor point is comprised of the good material of one or more layers electric conductivity, the metal or alloy materials such as described material can Al, Cu, Au, described anchor point one end is connected with brachium pontis conductance layer, the other end is connected with the signal read circuit of substrate base, makes the electric signal of hot conversion layer can be read out circuit and obtains and process.Described anchor points support bridge floor and brachium pontis, make micro-bridge structure unsettled.
10. terahertz emission detector as claimed in claim 1, is characterized in that: described substrate base comprises a metal level and signal read circuit.Described metal level is positioned at substrate base upper surface, is mainly used in reflection from the THz wave of Terahertz sensitive structure transmissive.Described signal read circuit is the change in resistance of reading thermistor, and read output signal is carried out to pre-service, as the circuit of amplification, integration, filtering, sampling/maintenance etc., can also form the serial/parallel row conversion that Terahertz focal plane arrays (FPA) carries out array signal to a plurality of sensitive structures simultaneously.
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