CN109443551A - The Terahertz micro-metering bolometer of multifrequency meta-material absorber based on loading resistor - Google Patents
The Terahertz micro-metering bolometer of multifrequency meta-material absorber based on loading resistor Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 84
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 42
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- 230000005540 biological transmission Effects 0.000 claims description 10
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- 235000008434 ginseng Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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Abstract
A kind of Terahertz micro-metering bolometer of the multifrequency meta-material absorber based on loading resistor, it include using silicon substrate made of standard 55nmCMOS technique, it is provided with the multifrequency Meta Materials absorbing structure that can receive the offered load resistance of three frequency range electromagnetic waves simultaneously on the silicon substrate and receives the PTAT temperature sensing circuit of the output signal of multifrequency Meta Materials absorbing structure, the output end of the PTAT temperature sensing circuit constitutes the output end of Terahertz micro-metering bolometer.The present invention can be realized while detect the terahertz signal of tri- frequency ranges of 910GHz, 2.58THz and 4THz, and detector responsivity is improved by introducing load resistance, and then a kind of effective ways of multifrequency terahertz detection are obtained, to realize that multifrequency high-performance terahertz detection provides possibility.
Description
Technical field
The present invention relates to a kind of Room temperature microbolometers.More particularly to a kind of multifrequency Meta Materials based on loading resistor
The Terahertz micro-metering bolometer of absorber.
Background technique
THz wave be a kind of electromagnetic wave of the frequency range between 0.1THz to 10THz, positioned at electromagnetic spectrum infrared light with
Between microwave, it has many superior characteristics, is mainly shown as: having lower energy, penetrate object and be not susceptible to ionize, right
Human body does not damage；Many chemical substances resonate after terahertz radiation with THz wave, can screen particularization
Learn substance；Terahertz imaging has very strong penetration capacity, can penetrate common packaging material, find dangerous goods therein.
The unique property of THz wave makes it in safety inspection, and military affairs investigation etc. has very big development potentiality, terahertz detection
Device constantly increases as the important component in terahertz imaging system, research tendency.
According to the difference of detection principle, room temperature terahertz detector is broadly divided into electric detection device and thermal detector.Electricity
Detector includes photoconduction type detector, high electron mobility transistor detector, Schottky diode type detector, field-effect
Transistor type detector；Thermal detector includes pyroelectric detector, thermocouple probe, micro-metering bolometer etc..Microbolometer
Heat meter can be divided into resistance-type micro-metering bolometer, the micro-metering bolometer based on unformed silicon, base according to temperature sensor difference
In the micro-metering bolometer of pn-junction diode and based on PTAT (Proportional To Absolute Temperature) temperature
Spend the micro-metering bolometer of sensing circuit.The sensitivity in Terahertz low frequency of photoconduction type detector is higher, but in high band spirit
Sensitivity is lower, and response speed is slower；High electron mobility transistor detector has small in size, the high advantage of detectivity,
But its response rate is low；Field effect transistor and schottky diode detector both detectors are by metal-oxide-semiconductor cutoff frequency
It limits, only the THz wave of detectable lower wave band.Since thermal detector is filled by temperature sensitivity caused by measurement incidence wave
The temperature change set detects the energy of incoming signal, therefore this detector does not have the limitation of transistor cutoff frequency, detectable
Arbitrary terahertz wave band.Wherein pyroelectric detector has many advantages, such as high-responsivity, high sensitivity, wide spectrum response, but nothing
Method is compatible with CMOS technology, is not suitable for volume production；Micro-metering bolometer is at low cost, detects wide frequency spectrum, manufacture craft and CMOS technology
It is compatible, it is possible to reduce the cost and volume of terahertz imaging system realize room temperature detection, high integration, small-sized for whole system
Change, large-scale production, cheap etc. provide possibility.Since PTAT circuit has, circuit is more mature, structural integrity and easily
The advantages that being integrated with CMOS technology, the favor by thermal detector.
Since in lower Terahertz frequency range, operation wavelength is longer, so may require that absorbing structure resonance with higher
The reception of chamber height (1/4 wavelength) Lai Tigao terahertz signal, but in CMOS integrated technique, it is limited by technique, top layer gold
Belong to and be less than 15um with the height of underlying metal, much smaller than the resonance height of 1/4 wavelength, so close using resonance height may be implemented
The Meta Materials absorbing structure of 1/50 wavelength can also realize independent polarization, wide angle absorption, multiband and broadband, dynamically may be used
Tuning absorbs and space is independent etc., can reach 90% or more, moreover, Meta Materials in the theoretical absorption rate of terahertz wave band
Absorber is also easier effectively to adjust THz wave response, it can by the shape, the size, medium that change Meta Materials
The parameters such as thickness degree and dielectric constant, are effectively improved the performances such as response frequency, working band and the absorptivity of THz wave.
The generally existing detection probability of Terahertz single-frequency detector is lower at present, and resolution ratio is lower and is easy by environmental disturbances
The problems such as, to embody the Necessity of Study of multifrequency detector.Detection and identification can effectively be enhanced using multifrequency detector
The probability of object in scene, preferably discrimination object；Can also be improved detection efficiency and rated capacity, thus obtain more at
As information；The scattering influence etc. that standing wave and complex object geometry can also be reduced simultaneously, improves detection accuracy.However, hot
The lower problem of the generally existing responsiveness of detector, so being firstly introduced Poly resistance junction in Terahertz Meta Materials absorbing structure
Structure, the ohmic loss for increasing electromagnetic power absorbs, and then enhances electro-magnetic wave absorption, improves the responsiveness of detector.
Therefore, how to realize the Terahertz micro-metering bolometer based on CMOS technology multifrequency Meta Materials absorbing structure becomes
One urgent demand and challenge, while also proposed the new demand for improving detector responsivity.
Summary of the invention
The technical problem to be solved by the invention is to provide one kind to have compared with high-responsivity, can detect three frequencies simultaneously
The Terahertz micro-metering bolometer of the multifrequency meta-material absorber based on loading resistor of section.
The technical scheme adopted by the invention is that: a kind of Terahertz of the multifrequency meta-material absorber based on loading resistor is micro-
Bolometer includes using silicon substrate made of standard 55nm CMOS technology, and being provided on the silicon substrate can be same
When receive three frequency range electromagnetic waves offered load resistance multifrequency Meta Materials absorbing structure and receive multifrequency Meta Materials absorb knot
The output end of the PTAT temperature sensing circuit of the output signal of structure, the PTAT temperature sensing circuit constitutes Terahertz microbolometer
The output end of heat meter.
The multifrequency Meta Materials absorbing structure is the first multifrequency by being respectively formed on the OI metal layer of CMOS technology
Meta Materials absorbing structure and the second multifrequency Meta Materials absorbing structure being formed on the EA metal layer of CMOS technology are constituted, and described the
The structure of one multifrequency Meta Materials absorbing structure and the second multifrequency Meta Materials absorbing structure is identical, is identical more by 6 structures
Frequency Meta Materials absorptive unit is constituted by 3 × 2 array arrangements, and each multifrequency Meta Materials absorptive unit includes: being formed in CMOS
The OI metal layer of technique or the rectangular body on EA metal layer, in the rectangular body using center as the center of circle by the center of circle outward according to
It is secondary to be provided with the first concentric octagon resonant ring, the second octagon resonant ring and third octagon resonant ring, wherein
The third octagon resonant ring and the second octagon resonant ring it is separated by a distance be greater than the first octagon resonant ring with
Second octagon resonant ring is separated by a distance；Along the axis of rectangular body: opposite in the first octagon resonant ring
First resistor is connected with as transmission line by Metal1 metal layer between two sides claimed, in the second octagon resonance
Second resistance is connected with as transmission line by Metal1 metal layer between two symmetrical sides of ring, on positive eight side of the third
3rd resistor is connected with as transmission line by Metal1 metal layer between two symmetrical sides of shape resonant ring.
The multifrequency Meta Materials for constituting the first multifrequency Meta Materials absorbing structure being located on the OI metal layer of CMOS technology absorb
In unit, the inside radius of the first octagon resonant ring, the second octagon resonant ring and third octagon resonant ring
Value is 5.93um, 10.59um and 22.87um respectively, and it is 2.3um, 2.6um and 4.6um that width, which distinguishes value,.
The multifrequency Meta Materials for constituting the second multifrequency Meta Materials absorbing structure being located on the EA metal layer of CMOS technology absorb
In unit, the inside radius of the first octagon resonant ring, the second octagon resonant ring and third octagon resonant ring
Value is 4um, 10.83um and 23.38um respectively, and it is 2.4um, 2.6um and 4.5um that width, which distinguishes value,.
The working frequency of the multifrequency Meta Materials absorbing structure of the offered load resistance is 910GHz, 2.58THz and 4THz.
The Terahertz micro-metering bolometer of multifrequency meta-material absorber based on loading resistor of the invention, realizes base for the first time
In 55nmCMOS technique, formed in conjunction with the load Poly multifrequency Meta Materials absorbing structure loaded and novel PTAT temperature sensing circuit
Multifrequency Terahertz micro-metering bolometer.The electromagnetism of three frequencies is received using the multifrequency Meta Materials absorbing structure of load Poly resistance
Wave receives structure and the heat production of Poly resistance by metal and converts heat for electromagnetic energy, then passes through PTAT temperature sensing circuit
It is output electric signal by converting heat, to realize while detect the Terahertz letter of tri- frequency ranges of 910GHz, 2.58THz and 4THz
Number, and detector responsivity is improved by introducing load resistance, and then obtain a kind of multifrequency terahertz detection there are efficacious prescriptions
Method, to realize that multifrequency high-performance terahertz detection provides possibility.
Detailed description of the invention
Fig. 1 is the composition frame of the Terahertz micro-metering bolometer of the multifrequency meta-material absorber the present invention is based on loading resistor
Figure；
Fig. 2 is the first multifrequency Meta Materials absorbing structure schematic diagram in the present invention on OI metal layer；
Fig. 3 is the second multifrequency Meta Materials absorbing structure schematic diagram in the present invention on EA metal layer；
Fig. 4 is the structural schematic diagram of the multifrequency Meta Materials absorptive unit of OI metal layer or EA metal layer in the present invention；
Fig. 5 is that offered load resistance is illustrated in the multifrequency Meta Materials absorptive unit of OI metal layer or EA metal layer in the present invention
Figure；
Fig. 6 is 910GHz absorbing structure and parameter schematic diagram in the present invention；
Fig. 7 is 2.58THz absorbing structure and parameter schematic diagram in the present invention；
Fig. 8 is 4THz absorbing structure and parameter schematic diagram in the present invention；
Fig. 9 is PTAT temperature sensor circuit schematic diagram in the present invention；
Figure 10 is the absorptivity of multifrequency Meta Materials absorbing structure in the present invention；
Figure 11 is the absorptivity of 910GHz Meta Materials absorbing structure in the present invention；
Figure 12 is the absorptivity of 2.58THz Meta Materials absorbing structure in the present invention；
Figure 13 is the absorptivity of 4THz Meta Materials absorbing structure in the present invention.
In figure
1: multifrequency Meta Materials absorbing structure 2:PTAT temperature sensing circuit
11: 12: the first octagon resonant ring of rectangular body
13: the second octagon resonant rings 14: third octagon resonant ring
Specific embodiment
Below with reference to embodiment and attached drawing to the Terahertz of the multifrequency meta-material absorber of the invention based on loading resistor
Micro-metering bolometer is described in detail.
As shown in Figure 1, the Terahertz micro-metering bolometer of the multifrequency meta-material absorber of the invention based on loading resistor,
It include to use silicon substrate made of standard 55nm CMOS technology, can be received simultaneously by being provided on the silicon substrate by three
The multifrequency Meta Materials absorbing structure 1 for being loaded with load resistance and reception multifrequency Meta Materials of frequency f1, f2, f3 of frequency range absorb knot
The output end of the PTAT temperature sensing circuit 2 of the output signal of structure 1, the PTAT temperature sensing circuit 2 constitutes Terahertz micrometering
The output end of bolometer.The working frequency of the multifrequency Meta Materials absorbing structure of the offered load resistance be 910GHz,
2.58THz and 4THz.
As shown in Fig. 2, Fig. 3, Fig. 4, Fig. 5, the multifrequency Meta Materials absorbing structure 1 is by being respectively formed at CMOS technology
OI metal layer on the first multifrequency Meta Materials absorbing structure and the second multifrequency for being formed on the EA metal layer of CMOS technology it is super
Material absorbing structure is constituted, the structure phase of the first multifrequency Meta Materials absorbing structure and the second multifrequency Meta Materials absorbing structure
It together, is to be made of the identical multifrequency Meta Materials absorptive unit A of 6 structures by 3 × 2 array arrangements, each multifrequency Meta Materials are inhaled
Receiving unit A includes: the rectangular body 11 being formed on the OI metal layer or EA metal layer of CMOS technology, the rectangle master
It is disposed with the first concentric octagon resonant ring 12, the second octagon on body 11 outward by the center of circle using center as the center of circle
Resonant ring 13 and third octagon resonant ring 14, wherein the third octagon resonant ring 14 is humorous with the second octagon
Vibration ring 13 is separated by a distance to be greater than the first octagon resonant ring 12 and the second octagon resonant ring 13 is separated by a distance；Along square
On the axis of shape main body 11: passing through Metal1 metal layer between two symmetrical sides of the first octagon resonant ring 12
It is connected with first resistor R1 as transmission line, is passed through between two symmetrical sides of the second octagon resonant ring 13
Metal1 metal layer is connected with second resistance R2 as transmission line, in symmetrical two of the third octagon resonant ring 14
3rd resistor R3 is connected with as transmission line by Metal1 metal layer between side.
The multifrequency Meta Materials for constituting the first multifrequency Meta Materials absorbing structure being located on the OI metal layer of CMOS technology absorb
In unit A, the first octagon resonant ring 12, the second octagon resonant ring 13 and third octagon resonant ring 14
Inside radius r1, r2, r3 distinguish value be 5.93um, 10.59um and 22.87um, width W1, W2, W3 distinguish value be 2.3um,
2.6um and 4.6um.
The multifrequency Meta Materials for constituting the second multifrequency Meta Materials absorbing structure being located on the EA metal layer of CMOS technology absorb
In unit A, the first octagon resonant ring 12, the second octagon resonant ring 13 and third octagon resonant ring 14
Value is 4um, 10.83um and 23.38um respectively by inside radius r1 ', r2 ', r3 ', and value is respectively by width W1 ', W2 ', W3 '
2.4um, 2.6um and 4.5um.
As shown in figure 9, the PTAT temperature sensing circuit 2 includes: PMOS transistor M1, M2, M5 and NMOS transistor
M3, M4, transistor size is identical and constitutes current-mirror structure, so flowing through the electric current of BJT (bipolar junction transistor) Q0 and Q1
It is identical；And the area ratio of Q1 and Q0 is n (n takes 7).
It is as follows to provide a specific example:
This example has gone out one kind based on 55nm CMOS technology, working frequency 910GHz, 2.58THz and 4THz, and respectively
The three frequency Terahertz Meta Materials absorbing structures for loading 1.66k Ω Poly ohmic load, in combination with PTAT temperature sensing circuit structure
At room temperature Terahertz micro-metering bolometer, embodiment is as follows:
1, it is based on 55nm CMOS technology, by the multifrequency Meta Materials absorbing structure and PTAT temperature sensing that load Poly resistance
The Terahertz micro-metering bolometer that circuit is constituted includes multifrequency Terahertz absorbing structure and PTAT temperature sensor circuit two parts；
2, first part is the design for loading three frequency range Meta Materials absorbing structures of Poly ohmic load, and concrete scheme is to answer
It is super to three frequency ranges of load Poly ohmic load in HFSS software with material properties and the size requirement of 55nm CMOS technology
Material absorbing structure is designed, models, and proposes a kind of periodical Meta Materials being made of three double-deck octagon resonant rings
Absorbing structure, and 1.66k is accessed below the corresponding double-deck octagon of each frequency by metallic vias and metal connecting layer
The Poly load resistance of Ω.As shown in Fig. 2~Fig. 5, OI, EA metal layer in technique for applying as double-level-metal absorbing structure,
Using Metal4 metal layer as reflection board structure, using Metal1 metal layer as transmission line structure, and optimize absorbing structure
In parameters.The surrounding of unit absorbing structure is set as periodic boundary condition, that is, two groups of principal and subordinate's boundary conditions are arranged, single
As excitation port, lower section is arranged the identical port Floquet and checks absorbing structure for the setting port Floquet above meta structure
Transmissivity.Parameter in emulation and optimization cellular construction makes Meta Materials absorbing structure near 910GHz, 2.58THz and 4THz
Resonance occurs, and has and is preferably absorbed with wider Terahertz, while meeting technological design rule.Optimize the ginseng of absorbing structure
Number, it is shown as shown in Fig. 2~Fig. 5, when absorptive unit side length D value is 48.55um, the corresponding absorbing structure of OI metal layer interior half
Diameter r1, r2 and r3 value takes 5.93um, 10.59um and 22.87um respectively, width W1, W2, W3 value be respectively 2.3um, 2.6um and
4.6um, EA metal layer absorbing structure inside radius r1 ', r2 ' and r3 ' value are respectively 4um, 10.83um and 23.38um, width W1',
When W2', W3' value are respectively 2.4um, 2.6um and 4.5um, Meta Materials absorbing structure in target frequency 910GHz, 2.58THz and
Absorptivity near 4THz is all larger than 90%, realizes higher and wider Terahertz absorption characteristic, and meets the design rule of technique
Then, as shown in Figure 10.
Be three corresponding double-deck octagon resonance ring structures with identical parameters by multifrequency STRUCTURE DECOMPOSITION, as Fig. 6,
Shown in Fig. 7, Fig. 8, wherein outer layer octagon resonance ring structure correspond to 910GHz THz wave absorption, corresponding parameter be D,
R1, W1, r1' and W1'；Middle layer octagon resonance ring structure correspond to 2.58THz THz wave absorption, corresponding parameter be D,
R2, W2, r2' and W2'；Internal layer octagon resonance ring structure correspond to 4.3THz THz wave absorption, corresponding parameter be D, r3,
W3, r3' and W3'.The absorptivity of three single-frequency absorbing structures respectively as shown in Figure 11, Figure 12, Figure 13, respectively 910GHz,
2.58THz and 4THz nearby has an absorptivity greater than 90%, in single-frequency structure, compared with other two frequency ranges, in 4THz frequency range
Resonance frequency have biggish offset.
3, second part is the design of PTAT temperature sensor circuit, and concrete scheme is to build in cadence software
PTAT circuit schematic diagram, as shown in Figure 9, comprising: PMOS transistor M1, M2, M5 and NMOS transistor M3, M4, transistor size
Identical and composition current-mirror structure, so the electric current for flowing through BJT (bipolar junction transistor) Q0 and Q1 is identical；And the face of Q1 and Q0
Product is than being n (n takes 7).PTAT circuit is designed and builds using the active area of 0.18um BiCMOS technique (55nm CMOS technology),
1.8V DC voltage source, ground connection and measurement output electric signal are respectively connected to by three pad.Optimize circuit structure and constituent element
Parameter improves the voltage temperature transfer efficiency of circuit, reduces the noise power spectral density of circuit, finally obtained PTAT circuit
Voltage temperature transformation efficiency is 3.8mV/K.
4, the multifrequency Meta Materials absorbing structure and PTAT temperature sensing circuit two parts of simultaneously Optimized loading Poly resistance are drawn
Laying out pattern, and by two-part structure carry out rationally, be effectively combined, it is ensured that domain meet 55nm CMOS technology processing wants
It asks, while optimizing the whole laying out pattern of detector, realize compact, reasonable detector domain.
Claims (5)
1. a kind of Terahertz micro-metering bolometer of the multifrequency meta-material absorber based on loading resistor, includes using standard
Silicon substrate made of 55nm CMOS technology, which is characterized in that three frequency ranges can be received simultaneously by being provided on the silicon substrate
The multifrequency Meta Materials absorbing structure (1) and reception multifrequency Meta Materials absorbing structure of the offered load resistance of electromagnetic wave (f1, f2, f3)
(1) output end of the PTAT temperature sensing circuit (2) of output signal, the PTAT temperature sensing circuit (2) constitutes Terahertz
The output end of micro-metering bolometer.
2. the Terahertz micro-metering bolometer of the multifrequency meta-material absorber according to claim 1 based on loading resistor,
It is characterized in that, the multifrequency Meta Materials absorbing structure (1) be by be respectively formed on the OI metal layer of CMOS technology
One multifrequency Meta Materials absorbing structure and the second multifrequency Meta Materials absorbing structure being formed on the EA metal layer of CMOS technology are constituted,
The structure of the first multifrequency Meta Materials absorbing structure and the second multifrequency Meta Materials absorbing structure is identical, is by 6 structure phases
Same multifrequency Meta Materials absorptive unit (A) is constituted by 3 × 2 array arrangements, and each multifrequency Meta Materials absorptive unit (A) includes
Have: the rectangular body (11) being formed on the OI metal layer or EA metal layer of CMOS technology, in the rectangular body (11) with
Center is that the center of circle is disposed with the first concentric octagon resonant ring (12), the second octagon resonant ring by the center of circle outward
(13) and third octagon resonant ring (14), wherein the third octagon resonant ring (14) and the second octagon are humorous
Vibration ring (13) is separated by a distance be greater than the first octagon resonant ring (12) and the second octagon resonant ring (13) is separated by away from
From；Along the axis of rectangular body (11): passing through between two symmetrical sides of the first octagon resonant ring (12)
Metal1 metal layer is connected with first resistor (R1) as transmission line, symmetrical in the second octagon resonant ring (13)
Second resistance (R2) is connected with as transmission line by Metal1 metal layer between two sides, in the third octagon resonance
3rd resistor (R3) is connected with as transmission line by Metal1 metal layer between two symmetrical sides of ring (14).
3. the Terahertz micro-metering bolometer of the multifrequency meta-material absorber according to claim 1 based on loading resistor,
It is characterized in that, the multifrequency Meta Materials for constituting the first multifrequency Meta Materials absorbing structure being located on the OI metal layer of CMOS technology are inhaled
It receives in unit (A), the first octagon resonant ring (12), the second octagon resonant ring (13) and third octagon are humorous
Value is 5.93um, 10.59um and 22.87um, width (W1, W2, W3) point to the inside radius (r1, r2, r3) of vibration ring (14) respectively
Other value is 2.3um, 2.6um and 4.6um.
4. the Terahertz micro-metering bolometer of the multifrequency meta-material absorber according to claim 1 based on loading resistor,
It is characterized in that, the multifrequency Meta Materials for constituting the second multifrequency Meta Materials absorbing structure being located on the EA metal layer of CMOS technology are inhaled
It receives in unit (A), the first octagon resonant ring (12), the second octagon resonant ring (13) and third octagon are humorous
Value is 4um, 10.83um and 23.38um, width (W1 ', W2 ', W3 ') to the inside radius (r1 ', r2 ', r3 ') of vibration ring (14) respectively
Value is 2.4um, 2.6um and 4.5um respectively.
5. the Terahertz micro-metering bolometer of the multifrequency meta-material absorber according to claim 1 based on loading resistor,
It is characterized in that, the working frequency of the multifrequency Meta Materials absorbing structure (1) of the offered load resistance is 910GHz, 2.58THz
And 4THz.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259970A (en) * | 2020-09-28 | 2021-01-22 | 东莞同济大学研究院 | Broadband wave-transmitting absorption-transmission integrated electromagnetic superstructure |
| CN114623850A (en) * | 2022-03-15 | 2022-06-14 | 东南大学 | Resonance enhanced passive coupling sensing structure |
| CN114845432A (en) * | 2022-04-11 | 2022-08-02 | 湖南大学 | Method for improving microwave treatment uniformity by using electromagnetic metamaterial |
| WO2022167524A1 (en) * | 2021-02-04 | 2022-08-11 | Bergische Universität Wuppertal | Receiver circuit for thz radiation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN104535198A (en) * | 2015-01-16 | 2015-04-22 | 电子科技大学 | Terahertz microbolometer based on metamaterial absorber and preparation method of terahertz microbolometer |
| CN106115604A (en) * | 2016-07-25 | 2016-11-16 | 电子科技大学 | Terahertz micro-metering bolometer based on metamaterial structure and preparation method thereof |
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| US20180006374A1 (en) * | 2009-10-22 | 2018-01-04 | At & T Ip I Lp | Method and apparatus for dynamically processing an electromagnetic beam |
-
2018
- 2018-09-19 CN CN201811094828.2A patent/CN109443551A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180006374A1 (en) * | 2009-10-22 | 2018-01-04 | At & T Ip I Lp | Method and apparatus for dynamically processing an electromagnetic beam |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN104535198A (en) * | 2015-01-16 | 2015-04-22 | 电子科技大学 | Terahertz microbolometer based on metamaterial absorber and preparation method of terahertz microbolometer |
| CN106115604A (en) * | 2016-07-25 | 2016-11-16 | 电子科技大学 | Terahertz micro-metering bolometer based on metamaterial structure and preparation method thereof |
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
Non-Patent Citations (2)
| Title |
|---|
| IVONNE ESCORCIA CARRANZA ET.AL.: ""Metamaterial-Based Terahertz Imaging"", 《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》 * |
| XIAOPENG SHEN ET.AL.: ""Polarization-independent wide-angle triple-band metamaterial absorber"", 《OPTICS EXPRESS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259970A (en) * | 2020-09-28 | 2021-01-22 | 东莞同济大学研究院 | Broadband wave-transmitting absorption-transmission integrated electromagnetic superstructure |
| WO2022167524A1 (en) * | 2021-02-04 | 2022-08-11 | Bergische Universität Wuppertal | Receiver circuit for thz radiation |
| CN114623850A (en) * | 2022-03-15 | 2022-06-14 | 东南大学 | Resonance enhanced passive coupling sensing structure |
| CN114623850B (en) * | 2022-03-15 | 2024-01-26 | 东南大学 | Resonance enhanced passive coupling sensing structure |
| CN114845432A (en) * | 2022-04-11 | 2022-08-02 | 湖南大学 | Method for improving microwave treatment uniformity by using electromagnetic metamaterial |
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