CN109216382B - Terahertz micro-bolometer based on CMOS (complementary Metal oxide semiconductor) process - Google Patents
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Abstract
A terahertz micro-bolometer based on a CMOS process adopts a 0.18um BiCMOS process, a broadband frequency selection surface structure, a narrowband frequency selection surface structure and a PTAT temperature sensing circuit are respectively arranged on a silicon substrate manufactured by applying a standard 0.18um BiCMOS process, the broadband frequency selection surface structure and the narrowband frequency selection surface structure are both arranged on a Metal4 Metal layer, the broadband frequency selection surface structure and the narrowband frequency selection surface structure respectively receive external electromagnetic waves f, the input end of the PTAT temperature sensing circuit respectively receives signals transmitted by the broadband frequency selection surface structure and the narrowband frequency selection surface structure, the output end of the PTAT temperature sensing circuit forms the output end of the micro-bolometer, the broadband frequency selection surface structure determines whether a terahertz signal exists or not, and the narrowband frequency selection surface structure determines the accurate frequency of the signal, accurate detection of 28.3THz signals is achieved.
Description
Technical Field
The invention relates to a room temperature microbolometer. In particular to a terahertz micro-bolometer based on a CMOS process.
Background
The terahertz wave is an electromagnetic wave with a frequency range of 0.1THz to 10THz, is positioned between infrared light and microwaves of an electromagnetic spectrum, has many excellent characteristics, and mainly has lower energy, is not easy to ionize by penetrating objects, and does not cause harm to human bodies; after being radiated by the terahertz waves, a plurality of chemical substances resonate with the terahertz waves, so that special chemical substances can be screened; terahertz imaging has very strong penetrating power, can penetrate common packaging materials, finds dangerous goods in the packaging materials and the like. The terahertz wave has great development potential in the aspects of security inspection, military investigation and the like due to the unique characteristics, and the terahertz detector is an important component in a terahertz imaging system and becomes a research focus.
According to different detection principles, the room temperature terahertz detector is mainly divided into an electrical detector and a thermal detector, wherein the electrical detector mainly comprises a photoconductive detector, a high electron mobility transistor type detector, a Schottky diode type detector and a field effect transistor type detector; the photoconductive detector has higher sensitivity at a terahertz low frequency, but has lower sensitivity at a high frequency band and lower response speed; the high electron mobility transistor detector has the advantages of small volume and high detection sensitivity, but the response rate is low; both the field effect transistor and the schottky diode detector are limited by the cut-off frequency of the MOS transistor, so that only terahertz waves in a lower waveband can be detected. The thermal detector mainly comprises a pyroelectric detector, a thermocouple detector, a microbolometer and the like. The thermal detector detects the energy of an incident signal by measuring the temperature change of the thermosensitive structure caused by the incident wave and outputting a corresponding electric signal, and any terahertz waveband can be detected without being limited by the cut-off frequency of the transistor. The pyroelectric detector and the thermocouple detector have the advantages of high responsivity, high sensitivity, wide spectral response and the like, but cannot be compatible with a CMOS (complementary metal oxide semiconductor) process and are not suitable for mass production; the microbolometer has low cost and wide detection spectrum, is compatible with a CMOS (complementary metal oxide semiconductor) process, can reduce the cost and the volume of a terahertz imaging system, and provides possibility for realizing room temperature detection, high integration, miniaturization, large-scale production, low price and the like of the whole system. Meanwhile, the PTAT circuit has the advantages of mature circuit, complete structure, high sensitivity and stability, easy integration with a CMOS (complementary metal oxide semiconductor) process and the like, and becomes the first choice of a temperature sensing structure in the terahertz micro-bolometer.
However, the structural model of the terahertz thermal detector based on the standard CMOS process is not complete enough, and the responsivity is low, and further improvement is needed; meanwhile, the traditional terahertz thermal detector can only verify the existence of terahertz signals, cannot accurately determine the frequency, and cannot realize accurate measurement of the terahertz signals, so how to accurately detect the terahertz signals needs to be solved urgently.
Disclosure of Invention
The invention aims to solve the technical problem of providing a terahertz micro-bolometer based on a CMOS (complementary metal oxide semiconductor) process, which can realize the accurate measurement of 28.3THz signals.
The technical scheme adopted by the invention is as follows: a terahertz micro-bolometer based on a CMOS process adopts a 0.18um BiCMOS process, a broadband frequency selection surface structure, a narrowband frequency selection surface structure and a PTAT temperature sensing circuit are respectively arranged on a silicon substrate manufactured by applying a standard 0.18um BiCMOS process, wherein the broadband frequency selection surface structure and the narrowband frequency selection surface structure are both arranged on a Metal4 Metal layer, the broadband frequency selection surface structure and the narrowband frequency selection surface structure respectively receive external electromagnetic waves f, the input end of the PTAT temperature sensing circuit respectively receives signals transmitted by the broadband frequency selection surface structure and the narrowband frequency selection surface structure, the output end of the PTAT temperature sensing circuit forms the output end of the micro-bolometer, the broadband frequency selection surface structure determines whether a terahertz signal exists or not, and the narrowband frequency selection surface structure determines the accurate frequency of the signals, accurate detection of 28.3THz signals is achieved.
The broadband frequency selective surface structure is a multi-resonance gap type absorption structure, 9 multi-resonance gap units with the same structure are arranged according to a 3 multiplied by 3 array, and each multi-resonance gap unit comprises: the Metal layer comprises a first rectangular main body formed on a Metal4 Metal layer, wherein a first gap is formed on the axis of the first rectangular main body, two second gaps are respectively formed on two sides of the first gap, a third gap is respectively formed on one side, far away from the first gap, of each second gap, and the first gap, the second gap and the third gap are parallel to each other.
Length l of the third gap3Is greater than the length l of the second gap2Length l of the second gap2Is greater than the length l of the first gap1(ii) a Width w of the first slit1Width w of the third gap3Is equal to and smaller than the width w of the second slit2(ii) a The distance d between the first gap and the second gap is smaller than the distance d between the second gap and the third gap1。
The narrow-band frequency selective surface structure is a Yelu cold cross slit type absorption structure, 9 Yelu cold cross slit units with the same structure are arranged according to a 3 multiplied by 3 array, and each Yelu cold cross slit unit comprises: the Metal layer comprises a second square main body formed on the Metal layer of Metal4, a cross-shaped gap formed in the middle of the second square main body, and four end gaps which are perpendicular to four extending sides of the cross-shaped gap and are formed on four ends of the cross-shaped gap and have the same structure.
The length of cross gap is M, and every width that stretches out the limit is W, the length of end gap is p, and the width is q, and wherein, the width q of every end gap is less than and is close to the width W that stretches out the limit, and the length p of end gap is less than and is close to the length M of half cross gap.
The operating frequency of the broadband frequency selective surface structure and the narrowband frequency selective surface structure is 28.3 THz.
The terahertz micro-bolometer based on the CMOS process realizes the micro-bolometer based on the CMOS process, has the working frequency of 28.3THz and can realize accurate terahertz signal detection for the first time. The electromagnetic wave of specific frequency is received to the broadband and narrowband frequency selective surface that utilizes two kinds of different structures simultaneously, and wherein the broadband detector confirms that there is terahertz signal, and the narrowband detector confirms the accurate frequency of signal, then turns into the heat with electromagnetic energy, and the novel PTAT temperature sensing circuit of rethread below periodic absorption structure turns into the output signal of telecommunication with the heat to realize terahertz signal's accurate detection.
Drawings
FIG. 1 is a block diagram of the structure of a terahertz microbolometer based on a CMOS process according to the present invention;
FIG. 2 is a schematic diagram of a broadband frequency selective surface structure according to the present invention;
FIG. 3 is a schematic diagram of a multi-resonant slot cell of the present invention;
FIG. 4 is a schematic diagram of a narrowband frequency selective surface structure of the present invention;
FIG. 5 is a schematic diagram of a Yellow cold cross slot unit of the present invention;
FIG. 6 is a circuit schematic of the PTAT temperature sensing circuit 3 of the present invention;
FIG. 7 is an S parameter of a multi-resonant slot-type absorption structure;
FIG. 8 is an absorption rate of a multi-resonant slot-type absorption structure;
FIG. 9 is an S parameter of a Yellowser cross-slit absorbent structure;
figure 10 is the absorbency rate of a yersinia cold cross slit absorbent structure.
In the drawings
1: broadband frequency selective surface structure 2: narrow band frequency selective surface structure
3: PTAT temperature sensing circuit a: multi-resonance gap unit
B: yelu sprinkling cooling cross gap unit
Detailed Description
The terahertz microbolometer based on the CMOS process of the present invention is described in detail below with reference to the embodiments and the accompanying drawings.
As shown in fig. 1, the terahertz micro bolometer based on CMOS process of the present invention adopts 0.18um BiCMOS process, and a broadband frequency selective surface structure 1, a narrowband frequency selective surface structure 2 and a PTAT temperature sensing circuit 3 are respectively disposed on a silicon substrate manufactured by applying standard 0.18um BiCMOS process, wherein the broadband frequency selective surface structure 1 and the narrowband frequency selective surface structure 2 are both disposed on Metal4 Metal layer, the broadband frequency selective surface structure 1 and the narrowband frequency selective surface structure 2 respectively receive external electromagnetic wave f, an input end of the PTAT temperature sensing circuit 3 respectively receives signals transmitted by the broadband frequency selective surface structure 1 and the narrowband frequency selective surface structure 2, an output end of the PTAT temperature sensing circuit 3 constitutes an output end of the micro bolometer, and the broadband frequency selective surface structure 1 determines whether there is a terahertz signal or not, the narrow-band frequency selective surface structure 2 determines the precise frequency of the signal, and realizes the accurate detection of the 28.3THz signal. The operating frequency of the broadband frequency selective surface structure 1 and the narrowband frequency selective surface structure 2 is 28.3 THz.
As shown in fig. 2, the broadband frequency selective surface structure 1 is a multi-resonant slot type absorption structure, and is formed by arranging 9 multi-resonant slot units a with the same structure in a 3 × 3 array, where each multi-resonant slot unit a includes: the Metal4 Metal layer is formed on a first rectangular main body 11, a first slit 12 is opened on the axis of the first rectangular main body 11, two second slits 13 are respectively opened on two sides of the first slit 12, a third slit 14 is respectively opened on one side of each second slit 13 far away from the first slit 12, and the first slit 12, the second slits 13 and the third slits 14 are parallel to each other.
The length l of the third gap 143Is greater than the length l of the second slit 132Length l of the second gap 132Is greater than the length l of the first slot 121(ii) a The width w of the first slot 121Width w of the third gap 143Is equal to and smaller than the width w of the second slit 132(ii) a The distance d between the first gap 12 and the second gap 13 is smaller than the distance d between the second gap 13 and the third gap 141。
The narrow-band frequency selective surface structure 2 is a yersinia scattering cross gap type absorption structure, 9 yersinia scattering cross gap units B with the same structure are arranged according to a 3 x 3 array, and each yersinia scattering cross gap unit B comprises: a second square main body 21 formed on Metal4 Metal layer, a cross-shaped slit formed in the middle of the second square main body 21, four end slits 24 of the same structure formed on the four ends of the cross-shaped slit and respectively perpendicular to the four extending sides 23 of the cross-shaped slit.
The length of cross gap is M, and every width that stretches out limit 23 is W, the length of end gap 24 is p, and the width is q, and wherein, the width q of every end gap 24 is less than and is close to the width W that stretches out limit 23, and the length p of end gap 24 is less than and is close to the length M of half cross gap.
As shown in fig. 6, the PTAT temperature sensing circuit 2 includes: PMOS transistors M1, M2, M5 and NMOS transistors M3, M4, which have the same size and form a current mirror structure, so that the currents flowing through BJTs (bipolar junction transistors) Q0 and Q1 are the same; and the area ratio of Q1 to Q0 is n (n is 7).
A specific example is given below:
the example provides a room temperature terahertz microbolometer based on a 0.18um BiCMOS process, with a working frequency of 28.3THz, integrated broadband, narrow band frequency selective surface absorption structure, and PTAT temperature sensing circuit:
1. the device comprises a broadband frequency selective surface, a narrowband frequency selective surface absorption structure and a PTAT temperature sensor circuit;
2. the first part is the design of a broadband absorption structure, the specific scheme is to apply the material property and the size parameter of a 0.18um BiCMOS process, design and model a broadband frequency selection surface in HFSS software, and provide a multi-resonant gap type frequency selection surface structure, as shown in fig. 2 and 3, a Metal4 Metal layer in the application process is used for designing the multi-resonant gap type absorption structure, and a Metal3 Metal layer is used as a reflector structure. The periphery of the unit absorption structure is provided with periodic boundary conditions, namely two groups of master-slave boundary conditions are set; a Floquet port is arranged above the absorption structure and is used as an excitation port, the reflection condition of the port is checked, and the Floquet port arranged below the absorption structure is the same and is used for checking the transmission condition of the absorption structure; the model center frequency was set to 28.3 THz. Parameters in the unit structure are simulated and optimized, so that the absorption structure generates resonance near 28.3THz, has better terahertz absorption, and simultaneously meets the process design rule. In this example: the length L of the absorption structure is 6.27um, the width W is 6.27um, and the length L of the gap with the shortest center1Take 2.8um, width w1Take a gap length l of 0.46um with shorter two sides2Take 3.85um, width w2Take 0.53um, longer gap length l3Take 5.65um, width w3Taking the distance d, d between the gaps of 0.46um1When 0.44um and 0.62um are taken respectively, S11 of the absorption structure<The bandwidth corresponding to-10 dB is 26THz-28.6THz, and the absorptance in this frequency band is greater than 90%, as shown in fig. 7 and 8.
3. The second part is the design of the narrow-band absorption structure, and provides a centrosymmetric yarrow cold cross gap type frequency selective surface structure, as shown in fig. 4 and 5, the HFSS modeling and setting are similar to the multi-resonance gap type frequency selective surface structure, the side length D of the optimized narrow-band absorption structure is 7.55um, the length M of the cross-shaped structure is 4.79um, the width W of the cross-shaped structure is 1um, the length p of the four end structures perpendicular to the cross-shaped absorption structure is 2.36um, and the width q of the four end structures is 0.92um, the absorption structure resonates near the 28.3THz frequency point, the bandwidth corresponding to S11< -10dB is 28.25THz-28.4THz, and in the frequency band, the absorptivity is greater than 90%, as shown in fig. 9 and 10.
3. The third part is the design of a PTAT temperature sensor circuit, and the specific scheme is that a PTAT circuit schematic diagram is built in cadence software, as shown in FIG. 6, the PTAT temperature sensor circuit comprises: PMOS transistors M1, M2, M5 and NMOS transistors M3, M4, which have the same size and form a current mirror structure, so that the currents flowing through BJTs (bipolar junction transistors) Q0 and Q1 are the same; and the area ratio of Q1 to Q0 is n (n is 7). A PTAT circuit is designed and built by applying an active area of a 0.18um BiCMOS process (55nm CMOS process), and a 1.8V direct-current voltage source, a ground and a measurement output electric signal are respectively connected through three pads. The circuit structure and the parameters of the components are optimized, the voltage-temperature conversion efficiency of the circuit is improved, the noise power spectral density of the circuit is reduced, and the finally obtained voltage-temperature conversion efficiency of the PTAT circuit is 3.8 mV/K.
4. The layout of the absorption structure and the PTAT temperature sensing circuit is drawn and optimized, the structures of the two parts are reasonably and effectively combined, the layout is ensured to meet the processing requirement of the CMOS process, meanwhile, the overall layout of the detector is optimized, and the compact and reasonable detector layout is realized.
Claims (4)
1. A terahertz micro-bolometer based on a CMOS process is characterized in that a 0.18um BiCMOS process is adopted, a broadband frequency selection surface structure (1), a narrowband frequency selection surface structure (2) and a PTAT temperature sensing circuit (3) are respectively arranged on a silicon substrate manufactured by applying a standard 0.18um BiCMOS process, wherein the broadband frequency selection surface structure (1) and the narrowband frequency selection surface structure (2) are both arranged on a Metal4 Metal layer, the broadband frequency selection surface structure (1) and the narrowband frequency selection surface structure (2) respectively receive external electromagnetic waves f, the input end of the PTAT temperature sensing circuit (3) respectively receives signals transmitted by the broadband frequency selection surface structure (1) and the narrowband frequency selection surface structure (2), and the output end of the PTAT temperature sensing circuit (3) forms the output end of the micro-bolometer, the broadband frequency selection surface structure (1) determines whether a terahertz signal exists or not, the narrowband frequency selection surface structure (2) determines the accurate frequency of the signal, and accurate detection of a 28.3THz signal is achieved;
the broadband frequency selective surface structure (1) is a multi-resonance gap type absorption structure, 9 multi-resonance gap units (A) with the same structure are arranged according to a 3 multiplied by 3 array, and each multi-resonance gap unit (A) comprises: the Metal layer comprises a first rectangular main body (11) formed on a Metal4 Metal layer, wherein a first gap (12) is formed on the axis of the first rectangular main body (11), two sides of the first gap (12) are respectively provided with a second gap (13), one side of each second gap (13) far away from the first gap (12) is respectively provided with a third gap (14), and the first gap (12), the second gap (13) and the third gap (14) are parallel to each other;
the length l of the third gap (14)3Is longer than the length l of the second gap (13)2Length l of the second gap (13)2Is longer than the length l of the first gap (12)1(ii) a The width w of the first gap (12)1Width w of the third gap (14)3Is equal to and smaller than the width w of the second slit (13)2(ii) a The distance d between the first gap (12) and the second gap (13) is smaller than the distance d between the second gap (13) and the third gap (14)1。
2. The CMOS process based terahertz microbolometer according to claim 1, wherein the narrow band frequency selective surface structure (2) is a yersinia cold cross slit type absorption structure, and is formed by arranging 9 structurally identical yersinia cold cross slit units (B) in a 3 x 3 array, each of the yersinia cold cross slit units (B) comprising: the Metal layer of the Metal4 comprises a second square main body (21) formed on the Metal layer of the Metal4, a cross-shaped gap formed in the middle of the second square main body (21), and four end gaps (24) which are respectively vertical to four extending sides (23) of the cross-shaped gap and are formed on four ends of the cross-shaped gap and have the same structure.
3. The CMOS process based terahertz microbolometer according to claim 2, wherein the cross-shaped slot has a length M, each protruding edge (23) has a width W, the end slots (24) have a length p and a width q, wherein the width q of each end slot (24) is smaller than and adjacent to the width W of the protruding edge (23), and the length p of the end slot (24) is smaller than and adjacent to half the length M of the cross-shaped slot.
4. The CMOS process based terahertz microbolometer according to claim 1, characterized in that the operating frequency of the broadband frequency selective surface structure (1) and the narrowband frequency selective surface structure (2) is 28.3 THz.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104701589A (en) * | 2015-01-23 | 2015-06-10 | 上海师范大学 | Filter resonance unit for nitrogen ion terahertz characteristic spectral line detection and manufacturing method for filter resonance unit |
| CN108336498A (en) * | 2017-01-19 | 2018-07-27 | 天津大学 | A kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701589A (en) * | 2015-01-23 | 2015-06-10 | 上海师范大学 | Filter resonance unit for nitrogen ion terahertz characteristic spectral line detection and manufacturing method for filter resonance unit |
| CN108336498A (en) * | 2017-01-19 | 2018-07-27 | 天津大学 | A kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology |
Non-Patent Citations (2)
| Title |
|---|
| A Terahertz On-Chip Frequency-Selective Surface Integrated with Temperature-Sensing Circuits in 0.18-μm Foundry CMOS Process;Li Su等;《2011 IEEE MTT-S International Microwave Symposium》;20110804;第1～4页 * |
| Design and on-chip measurement of CMOS infrared frequency-selective-surface absorbers for thermoelectric energy harvesting;Li Su等;《Asia-Pacific Microwave Conference 2011》;20120403;第461～464页 * |
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