CN109781267A - A kind of temperature-detecting device - Google Patents
A kind of temperature-detecting device Download PDFInfo
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- CN109781267A CN109781267A CN201910183307.2A CN201910183307A CN109781267A CN 109781267 A CN109781267 A CN 109781267A CN 201910183307 A CN201910183307 A CN 201910183307A CN 109781267 A CN109781267 A CN 109781267A
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Abstract
The embodiment of the invention discloses a kind of temperature-detecting devices, comprising: signal-obtaining handles chip and the temperature sensing chip including at least one sensing pixels unit, and signal-obtaining handles chip and temperature sensing chip and is bonded by bonded layer；It is bonded by the way that signal-obtaining is handled chip and temperature sensing chip using bonded layer, so that the preparation process of temperature-detecting device is simpler, has the advantages that mass production, at low cost, high yield rate.
Description
Technical field
The present embodiments relate to temperature detection technical field more particularly to a kind of temperature-detecting devices.
Background technique
Non-contact temperature measuring sensor is in various industries such as metallurgy, medical treatment, electric power, automobiles using extremely wide.
In the prior art, the major part in non-contact temperature measuring sensor is point temperature transducer, cannot reflect target comprehensively
Body surface temperature and changes of heat flux situation, cause temperature measurement inaccuracy, and temperature sensing sensitivity is low.Non-contact temperature measuring sensing
Device further includes small part face temperature transducer, such as focal plane array sensor, but existing face temperature transducer preparation process
Complexity, preparation cost are high.
Summary of the invention
The present invention provides a kind of temperature-detecting device, to realize simplified preparation process, reduces cost, improves temperature detection dress
The detection accuracy and sensitivity set.
The embodiment of the invention provides a kind of temperature-detecting devices, comprising: signal-obtaining handles chip and including at least
The temperature sensing chip of one sensing pixels unit, signal-obtaining handle chip and temperature sensing chip and are bonded by bonded layer.
Wherein, sensing pixels unit includes that the first temperature absorbs subelement, the first temperature sensitivity subelement and the first conduction
Subelement, the first temperature sensitivity subelement absorb subelement with the first temperature and contact, and the first temperature sensitivity subelement passes sequentially through
First conduction subelement and bonded layer are electrically connected with signal-obtaining processing chip.
Wherein, the first temperature absorption subelement includes the first upper layer metal, the first lower metal and first medium layer, the
One lower metal is set between first medium layer and signal-obtaining processing chip；First upper layer metal array is arranged in first Jie
Matter level to or away from the first lower metal side surface or the first upper layer metal insertion first medium layer in, and the
Array arrangement in one dielectric layer.
Wherein, first medium layer includes by one of silica, silicon nitride, silicon oxynitride, silicon carbide or a variety of formation
The sub- dielectric layer of at least one layer first.
Wherein, first medium layer further includes the second sub- dielectric layer that vacuum medium is formed, and the second sub- dielectric layer is set to the
Between one sub- dielectric layer and the first lower metal.
Wherein, the first temperature sensitivity subelement and the first upper layer metal are set to the ipsilateral or heteropleural of the first sub- dielectric layer,
Or first temperature sensitivity subelement be embedded into the first sub- dielectric layer, it is single that the first upper layer metal surrounds the sensitive son of the first temperature
Member.
Wherein, temperature sensing chip further includes reference pixel unit, and reference pixel unit includes that second temperature absorbs son list
Member, the second conduction subelement and second temperature sensitivity subelement, second temperature sensitivity subelement and second temperature absorb subelement
Contact, second temperature sensitivity subelement pass sequentially through the second conduction subelement and bonded layer and are electrically connected with signal-obtaining processing chip
It connects；
Wherein, the thermal absorptivity that second temperature absorbs subelement absorbs the thermal absorptivity of subelement less than the first temperature.
Wherein, it includes second dielectric layer that second temperature, which absorbs subelement, and second temperature sensitivity subelement is set to second Jie
Matter layer towards or divergence signal reading process chip-side surface or second temperature sensitivity subelement be embedded in second Jie
In matter layer.
Wherein, metal layer is deposited in second dielectric layer.
Wherein, the area on second dielectric layer divergence signal reading process chip-side surface is less than first medium layer away from letter
The area on number reading process chip-side surface.
Wherein, it further includes the second upper layer metal that second temperature, which absorbs subelement,
Second upper layer metal array be arranged in second dielectric layer towards or divergence signal reading process chip-side surface；
Or second upper layer metal be planar, be laid in second dielectric layer towards or divergence signal reading process chip-side
Surface.
Wherein, it further includes the second lower metal that second temperature, which absorbs subelement, and the second lower metal is set to second medium
Between layer and signal-obtaining processing chip.
Wherein, the first temperature sensitivity subelement includes first end and second end, and the first conduction subelement includes at least and the
It first conductive beam of one temperature sensitivity subelement first end electrical connection and is electrically connected with the first temperature sensitivity subelement second end
Second conductive beam, the first conductive beam and the second conductive beam handle chip bonding by bonded layer and signal-obtaining；
Second temperature sensitivity subelement includes third end and the 4th end, and the second conduction subelement includes at least and second temperature
The third conductive beam of sensitive subelement third end electrical connection and the 4th biography being electrically connected with the 4th end of second temperature sensitivity subelement
Nose girder, third conductive beam and the 4th conductive beam handle chip bonding by bonded layer and signal-obtaining.
Wherein, the first conductive beam, the second conductive beam, third conductive beam and the 4th conductive beam include conducting wire and coated wire
Heat-conduction medium.
Wherein, the first conductive beam and the second conductive beam be set to sensing pixels unit first medium layer and bonded layer it
Between, third conductive beam and the 4th passes to beam and is set between the second dielectric layer and bonded layer of reference pixel unit.
Wherein, the first medium layer divergence signal reading process of the first conductive beam and the second conductive beam from sensing pixels unit
The side of chip extends between first medium layer and bonded layer；
And third conductive beam and the 4th conductive beam are from the second dielectric layer divergence signal reading process of reference pixel unit
The side of chip extends between second dielectric layer and bonded layer.
Wherein, the first conduction subelement further includes at least two the 5th conductive beams, and the second conduction subelement further includes at least
Two the 6th conductive beams, the 5th conductive beam are thermally connected the first temperature and absorb subelement and signal-obtaining processing chip, the 6th conduction
Beam is thermally connected second temperature and absorbs subelement and signal-obtaining processing chip.
Wherein, the first conductive beam, the second conductive beam, third conductive beam, the 4th conductive beam, the 5th conductive beam and the 6th conduction
Beam be include at least structures such as the strip of a folding, column or S-shaped.
The embodiment of the invention provides a kind of temperature sensing devices, comprising: signal-obtaining handles chip and including at least
The temperature sensing chip of one sensing pixels unit, signal-obtaining handle chip and temperature sensing chip and are bonded by bonded layer；
By the way that signal-obtaining processing chip and temperature sensing chip bonding layer to be bonded, so that the preparation process of temperature-detecting device
It is simpler, have the advantages that mass production, at low cost, high yield rate.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of temperature-detecting device provided in an embodiment of the present invention；
A kind of structural schematic diagram of sensing pixels unit provided in an embodiment of the present invention when Fig. 2；
Fig. 3 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of reference pixel unit provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of another reference unit provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention；
Fig. 7 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention；
Fig. 8 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention；
Fig. 9 is the top view of another sensing pixels unit provided in an embodiment of the present invention；
Figure 10 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention；
Figure 11 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention；
Figure 12 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention.
Figure 13 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is a kind of structural schematic diagram of temperature-detecting device provided in an embodiment of the present invention, which can
With for non-contact temperature detection and thermal imaging, with reference to Fig. 1, which includes: signal-obtaining processing chip
100 and the temperature sensing chip 200 including at least one sensing pixels unit 210, signal-obtaining handles chip 100 and temperature
Degree sensing chip 200 is bonded by bonded layer 300.
Wherein, which can be non-contact temperature sensor.Schematically temperature-detecting device is Fig. 1
The situation of array face temperature transducer includes the sensing pixels unit of 9 array arrangements with temperature sensing chip with reference to Fig. 1
Illustrated for 210.Any object is being higher than absolute temperature generally all with heat radiation, and temperature sensing chip 200 can be right
The heat radiation of object is collected and perceives, and converts electric signal for the heat radiation being collected into.Signal-obtaining handles chip 100
Electric signal can be read out, be handled and exported, and then obtain the temperature of object being measured.
It should be noted that those skilled in the art may be based on the present invention will be collected into using temperature sensing chip 200
Heat radiation be converted into the signals such as electricity, optics or mechanics, and utilize electrical signal reading device, optical signalling reading device
Or the signal readers such as mechanical signal reading device are read out the signals such as electricity, optical signalling or mechanics, and then obtain
The temperature of object being measured.
Temperature sensing chip 200 and signal-obtaining chip are passed through bonded layer by temperature sensing device provided in this embodiment
300 bondings, such as it can be based on CIS (cmos image sensor) bonding and wafer thinning technique platform, by temperature sensing chip 200
Directly combined by being bonded with signal-obtaining processing chip 100, compared with the prior art temperature-detecting device overall structure
Based on CMOS technology and/or MEMS technology, the preparation process of temperature-detecting device can be made simpler, there is batch metaplasia
Produce, at low cost, high yield rate the advantages of.
Temperature sensing device provided in this embodiment includes signal-obtaining processing chip and senses picture including at least one
The temperature sensing chip of plain unit, by the way that signal-obtaining processing chip and temperature sensing chip bonding layer are bonded, so that
The preparation process of temperature-detecting device is simpler, has the advantages that mass production, at low cost, high yield rate.
Fig. 2 is a kind of structural schematic diagram of sensing pixels unit provided in an embodiment of the present invention, optional to pass with reference to Fig. 2
Feeling pixel unit 210 includes that the first temperature absorbs subelement 211, the first temperature sensitivity subelement 212 and the first conduction subelement
213, the first temperature sensitivity subelement 212 and the first temperature absorb subelement 211 and contact, the first temperature sensitivity subelement 212 according to
Secondary the first conduction subelement 213 and the bonded layer 300 of passing through is electrically connected with signal-obtaining processing chip 100.
With reference to Fig. 1 and Fig. 2, when detecting testee temperature using temperature-detecting device, the heat of testee radiation is arrived
When up to temperature-detecting device surface, the first temperature of sensing pixels unit 210, which absorbs subelement 211, can be absorbed testee spoke
Temperature change occurs for the heat penetrated, and the first temperature sensitivity subelement 212 absorbs subelement 211 with the first temperature and contacts, can feel
It measures the first temperature and absorbs the temperature change of subelement 211, and convert electric signal for the temperature variations sensed, pass through
First conduction subelement 213 and the conduction of bonded layer 300 to signal-obtaining handle chip 100, and signal-obtaining handles chip 100 can be with
Electric signal is read out, is handled and exported, and then obtains the temperature of object being measured, and then realizes the measurement to temperature.
With continued reference to Fig. 2, on the basis of above scheme, optionally, it includes on first that the first temperature, which absorbs subelement 211,
Layer metal 2111, the first lower metal 2113 and first medium layer 2112, the first lower metal 2113 are set to first medium layer
Between 2112 and signal-obtaining processing chip 100；First upper layer metal, 2111 array arrangement in first medium layer 2112 towards or
In the surface of 2113 side of the first lower metal or the first upper layer metal 2111 insertion first medium layer 2112, and
Array arrangement in first medium layer 2112.
Wherein, the first upper layer metal 2111 can be blocky, crosswise or annular shape.When the first upper layer metal 2111 is block
When shape, top view can be square, and be also possible to rectangle, and the present invention is not specifically limited herein.
Fig. 2 is bulk with the first upper layer metal 2111, and array arrangement deviates from the first lower metal in first medium layer 2112
It is schematically illustrated for the surface of 2113 sides.With reference to Fig. 2, specifically, the first upper layer metal 2111 and the first lower layer
Metal 2113 can be gold, silver, copper, aluminium, nichrome, tungsten, titanium etc..First upper layer metal 2111, the first lower metal 2113
The heat that testee radiates can be carried out effectively by absorbing subelement 211 with the first temperature that first medium layer 2112 forms
It absorbs, the heat of absorption concentrates in first medium layer 2112, then conducts to signal-obtaining and handles chip 100, signal-obtaining
The thickness for handling chip 100 is usually thicker, can play the role of heat sink, and then temperature-detecting device can be made to carry out primary temperature
After degree detection, the first temperature absorbs subelement 211 and is conducted in time from the heat that the external world absorbs, and then does not influence next time
Temperature detection, guarantee the detection accuracy of temperature-detecting device.First lower metal 2112 can also be handled signal-obtaining
The given out heat of the work of chip 100 plays reflex, reduces the first temperature and absorbs at 211 absorption signal reading of subelement
The reason work of chip 100 distributes heat bring measurement error.
With reference to Fig. 2,2111 array arrangement of the first upper layer metal deviates from the first lower metal 2113 in first medium layer 2112
The surface of side, so that the first upper layer metal 2111, first medium layer 2112 and the first lower metal 2113 form super material
Expect structure, improves the first temperature and absorb the thermal radiation absorption rate and Absorber Bandwidth that subelement 211 absorbs, and then improve temperature detection
The sensitivity and resolution ratio of device.It should be noted that Fig. 2 schematically shows only 2111 array arrangement of the first upper layer metal
In first medium layer 2112 deviate from 2113 side of the first lower metal surface the case where, 2111 array of the first upper layer metal setting
In surface of the first medium layer 2112 towards 2113 side of the first lower metal or situation about being embedded in first medium layer 2112
It is not shown, but first medium layer 2112 is arranged in towards 2113 side of the first lower metal in 2111 array of the first upper layer metal
Surface or be embedded in first medium layer 2112 equally may make under the first upper layer metal 2111, first medium layer 2112 and first
Layer metal 2113 forms metamaterial structure, and has beneficial effect brought by above-mentioned metamaterial structure.
Wherein, the first lower metal 2113 can with signal-obtaining handle chip 100 contact, can not also at signal-obtaining
It manages chip 100 to contact, the present invention is not specifically limited herein.
Optionally, first medium layer 2112 includes by one of silica, silicon nitride, silicon oxynitride, silicon carbide or more
The sub- dielectric layer 21121 of at least one layer first that kind is formed.
Specifically, the first sub- dielectric layer 21121 can be used for carrying the first upper layer metal 2111 and the sensitive son of the first temperature is single
Member 212, and insulating materials is used, it avoids influencing electricity between the first temperature sensitivity subelement 212 and signal-obtaining processing chip 100
The transmission of signal.
With continued reference to Fig. 2, optionally, first medium layer 2112 further includes the second sub- dielectric layer that vacuum medium is formed
21122, the second sub- dielectric layer 21122 is set between the first sub- dielectric layer 21121 and the first lower metal 2113.
Specifically, it includes one of silica, silicon nitride, silicon oxynitride, silicon carbide that setting first medium layer 2112, which is,
Or the structure of the second sub- dielectric layer 21122 of the sub- dielectric layer 21121 of at least one layer first and the vacuum medium formation of a variety of formation,
The first temperature can be made to absorb the first medium layer 2112 and the first lower metal 2113 formation resonant cavity knot of subelement 211
Structure is conducive to improve the absorptivity to testee heat radiation.
It should be noted that the first temperature, which absorbs subelement 211, can also only include one or more layers the first sub- dielectric layer
21121, two of the first sub- 21121 divergence signal reading process chip 100 of dielectric layer and signal-oriented reading process chip 100
Surface carries the first lower metal 2113 of the first upper layer metal 2111 and contact respectively, forms dielectric layer structure, the present invention is herein
It is not specifically limited.
On the basis of above scheme, optionally, the first temperature sensitivity subelement 212 and the first upper layer metal 2111 are arranged
In the ipsilateral or heteropleural of the first sub- dielectric layer 21121 or the first temperature sensitivity subelement 212 and it is embedded into the first sub- dielectric layer
In 21121, the first upper layer metal 2111 surrounds the first temperature sensitivity subelement 212.
Fig. 2 shows the first temperature sensitivity subelements 212 and the first upper layer metal 2111 to be set to the first sub- dielectric layer
21121 ipsilateral situations, the first upper layer metal 2111 surround the first temperature sensitivity subelement 212, it is quick to be more advantageous to the first temperature
Feel the heat that subelement 212 senses the testee radiation that the first upper layer metal 2111 absorbs.Optionally, the sensitive son of the first temperature
Unit 212 is located at the center of the first sub- dielectric layer 21121, so that the first temperature sensitivity subelement 212 senses respectively
It is impartial that first temperature of a position absorbs the heat that subelement 211 is absorbed, so that temperature-detecting device detection temperature is more quasi-
Really.
It should be noted that the first temperature sensitivity subelement 212 and the first upper layer metal 2111 are set to the first sub- medium
The heteropleural and the first temperature sensitivity subelement 212 of layer 21121 are not shown with the case where being embedded into the first sub- dielectric layer 21121,
First temperature sensitivity subelement 212 and the first upper layer metal 2111 are set to the heteropleural and first of the first sub- dielectric layer 21121
When temperature sensitivity subelement 212 is embedded into the first sub- dielectric layer 21121, the first upper layer metal 2111 handles chip in signal-obtaining
Upright projection on 100 can surround vertical throwing of the first temperature sensitivity subelement 212 on signal-obtaining processing chip 100
Shadow is more advantageous to the heat that the first temperature sensitivity subelement 212 senses the testee radiation that the first upper layer metal 2111 absorbs,
And it is chosen as the center that the first temperature sensitivity subelement 212 is located at the first sub- 21121 surface of dielectric layer or inside.
Fig. 3 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention, with reference to Fig. 3, optionally,
Temperature sensing chip 200 further includes reference pixel unit 220, and Fig. 4 is a kind of reference pixel unit provided in an embodiment of the present invention
Structural schematic diagram, with reference to Fig. 3 and Fig. 4, reference pixel unit 220 includes that second temperature absorbs conduction of subelement 221, second
Unit 223 and second temperature sensitivity subelement 222, second temperature sensitivity subelement 222 absorb subelement 221 with second temperature and connect
Touching, second temperature sensitivity subelement 222 passes sequentially through the second conduction subelement 223 and bonded layer 300 and signal-obtaining handles core
Piece 100 is electrically connected；
Wherein, the thermal absorptivity that second temperature absorbs subelement 221 absorbs the heat absorption of subelement 211 less than the first temperature
Rate.
Specifically, the second temperature of reference pixel unit 220 absorbs subelement 221 to the thermal radiation absorption rate of testee
Far smaller than the first temperature of sensing pixels unit 210 absorbs thermal radiation absorption rate of the subelement 211 to testee, reference image
Plain unit 220 can be used for excluding the temperature-detecting device shadow of self-heating to measurement result in detection testee temperature course
It rings, ideally, reference pixel unit 220 does not absorb the heat that testee is radiated, only absorbs temperature-detecting device certainly
The distributed heat of body work, the first temperature that signal-obtaining processing chip 100 can read sensing pixels unit 210 respectively are sensitive
The electric signal of the second temperature sensitivity subelement 222 of electric signal and reference pixel unit 220 that subelement 212 is transmitted, and
It is handled, such as the sensitive son of the corresponding temperature of electric signal and second temperature that the first temperature sensitivity subelement 212 is transmitted is single
The corresponding temperature of electric signal of 222 transmission of member is made the difference, and then excludes itself thermal agitation of sensing pixels unit 210 and signal reading
Take the influence of the factors such as processing 100 circuit bias bring temperature rise of chip.
Optionally, it includes second dielectric layer that second temperature, which absorbs subelement 221, and second temperature sensitivity subelement 222 is arranged
In second dielectric layer towards or 100 side of divergence signal reading process chip surface or second temperature sensitivity subelement
222 are embedded in second dielectric layer.
Fig. 4 shows second temperature sensitivity subelement 222 and is set to 2212 divergence signal reading process core of second dielectric layer
The case where surface of 100 side of piece, optionally, second temperature sensitivity subelement 222, are set to second temperature sensitivity subelement 222
Be set to second dielectric layer 2212 towards or 100 side of divergence signal reading process chip surface center, or
Second temperature sensitivity subelement 222 is embedded in the center of second dielectric layer 2212, so that the sensitive son of second temperature is single
Member 222 can equably receive the heat that second dielectric layer 2212 is absorbed.
Fig. 5 is the structural schematic diagram of another reference unit provided in an embodiment of the present invention, with reference to Fig. 5, optionally, second
Metal layer 22112 is deposited in dielectric layer 2212.
Specifically, the metal layer 22112 deposited in second dielectric layer 2212 can be whole face shape metal layer, the whole face shape
Metal layer is complete whole face metal layer, which can play reflex, so that the of reference pixel unit 220
It is so few that absorb the heat that external object is given off as far as possible that two temperature absorb subelement 221, so that reference pixel unit 220 can be with
As the reference data for excluding temperature sensor itself thermal agitation.With reference to Fig. 5, the metal layer that is deposited in second dielectric layer 2212
22112 can be set between the two straton dielectric layers 22111 and 22113 that dielectric is formed.
Optionally, the area of 2212 divergence signal reading process chip of second dielectric layer, 100 1 side surface is situated between less than first
The area of 2112 divergence signal reading process chip of matter layer, 100 1 side surface.Specifically, because 2212 pairs of second dielectric layer it is extraneous
Heat radiation may play certain absorption, and the surface area of the second dielectric layer 2212 of reference pixel unit 220 is set to
Less than the surface area of the first medium layer 2112 of sensing pixels unit 210, it is external that reference pixel unit 220 can be further decreased
The absorptivity of the heat radiation of boundary's object, so that temperature detected by reference pixel unit 220 is closer to temperature sensing chip
Temperature rise brought by 200 self-heatings, and then in signal-obtaining processing chip 100 to sensing pixels unit 210 and reference pixel
After the signal of unit 220 carries out Difference Calculation, it is more nearly the actual temperature of testee, improves temperature-detecting device detection temperature
The accuracy of degree.
Fig. 6 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention, and Fig. 7 is implementation of the present invention
The structural schematic diagram for another reference pixel unit that example provides, with reference to Fig. 6 and Fig. 7, second temperature absorbs subelement 221 and also wraps
The second upper layer metal 2211 is included,
Second upper layer metal, 2211 array arrangement in second dielectric layer 2212 towards or divergence signal reading process chip 100
The surface of side specifically refers to reference pixel unit 220 shown in fig. 6；
Or second upper layer metal 2211 be planar, be laid in second dielectric layer 2212 towards or divergence signal reading process
The surface of 100 side of chip specifically refers to reference pixel unit 220 shown in Fig. 7.
In addition, the second upper layer metal 2211 is also embeddable into second dielectric layer 2212.Wherein, the second upper layer metal 2211
Array arrangement in second dielectric layer 2212 towards or 100 side of divergence signal reading process chip surface or the second upper layer
When metal 2211 is embedded into second dielectric layer 2212, the second upper layer metal 2211 can be blocky, crosswise or annular shape.When
When first upper layer metal 2111 is blocky, top view can be square, and be also possible to rectangle, and the present invention does not do specific limit herein
It is fixed.It should be noted that the shape of the second upper layer metal 2211 is preferably identical as the shape of the first upper layer metal 2111.
Fig. 6 is bulk with the second upper layer metal 2211, and array arrangement is in 2212 divergence signal reading process of second dielectric layer
It is schematically illustrated for the surface of 100 side of chip.
With reference to Fig. 6 and Fig. 7, it includes the second upper layer metal 2211 and second medium that the second temperature, which absorbs subelement 221,
Layer 2212 does not have lower metal layer, so that reference pixel unit 220 cannot be formed compared with sensing pixels unit 210
Metamaterial structure makes reference pixel unit 220 absorb the heat that external object is radiated as little as possible.Also, reference shown in Fig. 7
Second upper layer metal 2211 of pixel unit 220 is planar, can reflect the heat that external object is distributed, make reference pixel list
Member 220 less absorbs the heat that external object is distributed.
Fig. 8 is the structural schematic diagram of another reference pixel unit provided in an embodiment of the present invention, with reference to Fig. 8, reference image
Plain unit 220 further includes the second lower metal 2213, and the second lower metal 2213 is set to second dielectric layer 2212 and signal is read
It takes between processing chip 100.
With reference to Fig. 8, reference pixel unit 220 includes second dielectric layer 2212 and the second lower metal 2213, with sensing picture
Plain unit 210 is compared, and do not have upper metal layers makes to join so that reference pixel unit 220 cannot form metamaterial structure
It examines pixel unit 220 and absorbs the heat that external object is radiated as little as possible.
With reference to Fig. 2-Fig. 8, optionally, the first temperature sensitivity subelement 212 includes first end and second end, the first conduction
Unit 213 include at least the first conductive beam 2131 for be electrically connected with 212 first end of the first temperature sensitivity subelement and with it is first warm
The second conductive beam 2132 of sensitive 212 second end of subelement electrical connection is spent, the first conductive beam 2131 and the second conductive beam 2132 are logical
Bonded layer 300 is crossed to be bonded with signal-obtaining processing chip 100；
Second temperature sensitivity subelement 222 includes third end and the 4th end, and the second conduction subelement 223 includes at least and the
Two temperature sensitivity subelements, 222 third end electrical connection third conductive beam 2231 and with second temperature sensitivity subelement 222 the 4th
The 4th conductive beam 2232 of electrical connection, third conductive beam 2231 and the 4th conductive beam 2232 is held to read by bonded layer 300 and signal
Processing chip 100 is taken to be bonded.
Wherein, the first temperature sensitivity subelement 212 and second temperature sensitivity subelement 222 can be two-terminal element, below
It is referred to as the first temperature sensitivity subelement 212 and second temperature sensitivity subelement 222 for sensitive subelement, sensitive subelement can be
Temperature change is converted to the functional component of voltage change, such as temperature sensitive diode, field-effect tube, thermocouple, thermoelectric pile；
It can be the functional component that temperature change is converted to the resistance variations of material, such as amorphous silicon, vanadium oxide, titanium oxide；It can be with
It is that temperature change is converted to the charge variation of material, such as lead zirconate titanate, pyroelectricity material.
When sensitive subelement is temperature sensitive diode, temperature sensitive diode is pn-junction type diode, can be pn
Knot, np knot are also possible to two-in-one npn knot and pnp knot；Diode can be silicon diode, germanium diode, two pole of polysilicon
Pipe；Diode can be one, be also possible to the series connection of multiple same kinds or different types.
The both ends of first temperature sensitivity subelement 212 are electrically connected with the first conductive beam 2131 and the second conductive beam 2132 respectively
It connects, bonded layer 300 and the second conductive beam 2132 and letter between the first conductive beam 2131 and signal-obtaining processing chip 100
Bonded layer 300 between number reading process chip 100 is also electrically conductive material, such as metal, so that the first temperature
The electric signal that sensitive subelement 212 exports can be conducted extremely by the first conductive beam 2131, the second conductive beam 2132 and bonded layer 300
Signal-obtaining handles chip 100.
The both ends of second temperature sensitivity subelement 222 are electrically connected with third conductive beam 2231 and the 4th conductive beam 2232 respectively
It connects, bonded layer 300 and the 4th conductive beam 2232 and letter between third conductive beam 2231 and signal-obtaining processing chip 100
Bonded layer 300 between number reading process chip 100 is also electrically conductive material, such as metal, so that second temperature
The electric signal that sensitive subelement 222 exports can be conducted extremely by third conductive beam 2231, the 4th conductive beam 2232 and bonded layer 300
Signal-obtaining handles chip 100.
Optionally, the first conductive beam 2131, the second conductive beam 2132, third conductive beam 2231 and the 4th conductive beam 2232 packet
Include the heat-conduction medium of conducting wire and coated wire.
Specifically, plain conductor can be used for conducting the first temperature sensitivity subelement 212 and second temperature sensitivity subelement 222
The electric signal of output, heat-conduction medium the first temperature can be absorbed to subelement 211 and second temperature absorbs subelement 221 outside
The heat that boundary absorbs, which is conducted to signal-obtaining, handles chip 100, and signal-obtaining processing chip 100 can play the role of heat sink.It is optional
, the material of conducting wire can be copper, aluminium, tungsten, poly etc., and heat-conduction medium can be silica, silicon nitride, silicon oxynitride, carbon
SiClx etc..
With continued reference to Fig. 2-Fig. 8, optionally, the first conductive beam 2131 and the second conductive beam 2132 are set to sensing pixels list
Between the first medium layer 2112 and bonded layer 300 of member 210, third conductive beam 2231 and the 4th conductive beam 2232 are set to reference
Between the second dielectric layer 2212 and bonded layer 300 of pixel unit 220.
Specifically, the first conductive beam 2131, the second conductive beam 2132, third conductive beam 2231 and the 4th conductive beam 2232 rise
To the effect of conduction electric signal and conduction heat, the first conductive beam 2131 and the second conductive beam 2132 are set to sensing pixels list
Between the first medium layer 2112 and bonded layer 300 of member 210, third conductive beam 2231 and the 4th conductive beam 2232 are set to reference
Between the second dielectric layer 2212 and bonded layer 300 of pixel unit 220, guaranteeing the first conductive beam 2131, the second conductive beam
2132, under the premise of third conductive beam 2231 and 2232 normal conduction electric signal of the 4th conductive beam and heat, conduction can be shortened
The length of beam saves material.
Fig. 9 is the top view of another sensing pixels unit provided in an embodiment of the present invention, can correspond to sensing pixels
The top view of unit 210.Fig. 9 shows the first conductive beam 2131 and the second conductive beam 2132 in first medium layer 2112 away from letter
The structure of number 100 side of reading process chip.First conductive beam 2131 and the second conductive beam 2132 are from sensing pixels unit 210
The side of 2112 divergence signal reading process chip 100 of first medium layer extend to first medium layer 2112 and bonded layer 300 it
Between.It should be noted that the top view of reference pixel unit can also situation shown in corresponding diagram 9, details are not described herein.
It should be noted that the first conductive beam provided in an embodiment of the present invention, the second conductive beam, third conductive beam and the 4th
Conductive beam is not limited to structure and position provided by the various embodiments described above, and those skilled in the art are proposed based on present inventive concept
Other improvements equally within protection scope of the present invention.
Figure 10 is the structural schematic diagram of another sensing pixels unit provided in an embodiment of the present invention, and Figure 11 is of the invention real
The structural schematic diagram that another reference pixel unit of example offer is provided, with reference to Figure 10 and Figure 11, optionally, the first conduction subelement
213 further include at least two the 5th conductive beams 2133, and the second conduction subelement 223 further includes at least two the 6th conductive beams
2233, the 5th conductive beam 2133 is thermally connected the first temperature and absorbs subelement 211 and signal-obtaining processing chip 100, the 6th conduction
Beam 2233 is thermally connected second temperature and absorbs subelement 221 and signal-obtaining processing chip 100.
Optionally, the first conductive beam 2131, the second conductive beam 2132, third conductive beam 2231, the 4th conductive beam 2232,
Five conductive beams 2133 and the 6th conductive beam 2233 are the strip or column structure for including an at least folding.Wherein, Fig. 2-Fig. 8, and
Figure 10-Figure 11 by each conductive beam be include a folding column structure for schematically illustrated, schematically passed in Fig. 9
Nose girder is the situation of multi-fold structure.The broken number of each conductive beam, those skilled in the art can voluntarily prepare according to actual needs, this
Invention is not particularly limited herein.Also, the first conductive beam 2131 in the embodiment of the present invention is perpendicular to first conductive beam
The perimeter of section of 2131 long axis directions can be equal, can not also wait, and the present invention is not specifically limited herein, for other conduction
Beam can also be equal in the perimeter of section perpendicular to the conductive beam long axis direction, can not wait.
Figure 12 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention, corresponds to the first upper layer
Metal 2111 is the structure of crosswise.
Figure 13 is the structural schematic diagram of another temperature-detecting device provided in an embodiment of the present invention, corresponds to the first upper layer
Metal 2111 is circular structure.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (18)
1. a kind of temperature-detecting device characterized by comprising signal-obtaining handles chip and including at least one sensing
The temperature sensing chip of pixel unit, the signal-obtaining processing chip and the temperature sensing chip are bonded by bonded layer.
2. temperature-detecting device according to claim 1, which is characterized in that the sensing pixels unit includes the first temperature
Absorb subelement, the first temperature sensitivity subelement and the first conduction subelement, the first temperature sensitivity subelement and described the
One temperature absorbs subelement contact, and the first temperature sensitivity subelement passes sequentially through the first conduction subelement and the key
Layer is closed to be electrically connected with signal-obtaining processing chip.
3. temperature-detecting device according to claim 2, which is characterized in that it includes that first temperature, which absorbs subelement,
One upper layer metal, the first lower metal and first medium layer, first lower metal be set to the first medium layer and
Between the signal-obtaining processing chip；First upper layer metal array be arranged in the first medium level to or away from institute
The surface or first upper layer metal for stating the first lower metal side are embedded in the first medium layer, and described the
Array arrangement in one dielectric layer.
4. temperature-detecting device according to claim 3, which is characterized in that the first medium layer include by silica,
One of silicon nitride, silicon oxynitride, silicon carbide or the sub- dielectric layer of at least one layer of a variety of formation first.
5. temperature-detecting device according to claim 4, which is characterized in that the first medium layer further includes vacuum medium
The the second sub- dielectric layer formed, the second sub- dielectric layer be set to the described first sub- dielectric layer and first lower metal it
Between.
6. temperature-detecting device according to claim 4, which is characterized in that the first temperature sensitivity subelement with it is described
First upper layer metal is set to ipsilateral or heteropleural or the first temperature sensitivity subelement insertion of the described first sub- dielectric layer
Into the described first sub- dielectric layer, first upper layer metal surrounds the first temperature sensitivity subelement.
7. temperature-detecting device according to claim 3, which is characterized in that the temperature sensing chip further includes reference image
Plain unit, the reference pixel unit include that second temperature absorbs subelement, the second conduction subelement and the sensitive son of second temperature
Unit, the second temperature sensitivity subelement absorb subelement with the second temperature and contact, and the sensitive son of the second temperature is single
Member passes sequentially through the second conduction subelement and the bonded layer and is electrically connected with signal-obtaining processing chip；
Wherein, the thermal absorptivity that the second temperature absorbs subelement is less than the heat absorption that first temperature absorbs subelement
Rate.
8. temperature-detecting device according to claim 7, which is characterized in that it includes that the second temperature, which absorbs subelement,
Second medium layer, the second temperature sensitivity subelement be set to the second dielectric layer towards or at the signal-obtaining
The surface or the second temperature sensitivity subelement for managing chip-side are embedded in the second dielectric layer.
9. temperature-detecting device according to claim 8, which is characterized in that be deposited with metal in the second dielectric layer
Layer.
10. temperature-detecting device according to claim 8, which is characterized in that the second dielectric layer deviates from the signal
The area on reading process chip-side surface is less than first medium layer away from the face on signal-obtaining processing chip-side surface
Product.
11. temperature-detecting device according to claim 8, which is characterized in that the second temperature absorbs subelement and also wraps
The second upper layer metal is included,
Second upper layer metal array is arranged in the second dielectric layer and handles chip one towards or away from the signal-obtaining
The surface of side；
Or second upper layer metal is planar, is laid in the second dielectric layer and handles towards or away from the signal-obtaining
The surface of chip-side.
12. temperature-detecting device according to claim 8, which is characterized in that the second temperature absorbs subelement and also wraps
Include the second lower metal, second lower metal be set to the second dielectric layer and signal-obtaining processing chip it
Between.
13. temperature-detecting device according to claim 8, which is characterized in that the first temperature sensitivity subelement includes
First end and second end, the first conduction subelement is included at least to be electrically connected with the first temperature sensitivity subelement first end
The first conductive beam and the second conductive beam for being electrically connected with the first temperature sensitivity subelement second end, first conductive beam
Chip bonding is handled by the bonded layer and the signal-obtaining with second conductive beam；
The second temperature sensitivity subelement includes third end and the 4th end, and the second conduction subelement includes at least and second
The third conductive beam and be electrically connected with the 4th end of second temperature sensitivity subelement that temperature sensitivity subelement third end is electrically connected
The 4th conductive beam, the third conductive beam and the 4th conductive beam handle core by the bonded layer and the signal-obtaining
Piece bonding.
14. temperature-detecting device according to claim 13, which is characterized in that first conductive beam, described second pass
Nose girder, the third conductive beam and the 4th conductive beam include the heat-conduction medium of conducting wire and the cladding conducting wire.
15. temperature-detecting device according to claim 13, which is characterized in that first conductive beam and described second passes
Nose girder is set between the first medium layer and the bonded layer of the sensing pixels unit, the third conductive beam and described
Four, which pass to beam, is set between the second dielectric layer and the bonded layer of the reference pixel unit.
16. temperature-detecting device according to claim 13, which is characterized in that first conductive beam and described second passes
Nose girder extends to described the away from the side of signal-obtaining processing chip from the first medium layer of the sensing pixels unit
Between one dielectric layer and the bonded layer；
And the third conductive beam and the 4th conductive beam from the second dielectric layer of the reference pixel unit away from described
The side of signal-obtaining processing chip extends between the second dielectric layer and the bonded layer.
17. temperature-detecting device according to claim 16, which is characterized in that it is described first conduction subelement further include to
Few two the 5th conductive beams, the second conduction subelement further includes at least two the 6th conductive beams, the 5th conductive beam heat
It connects first temperature and absorbs subelement and signal-obtaining processing chip, the 6th conductive beam is thermally connected described second
Temperature absorbs subelement and the signal-obtaining handles chip.
18. temperature-detecting device according to claim 17, which is characterized in that first conductive beam, described second pass
Nose girder, the third conductive beam, the 4th conductive beam, the 5th conductive beam and the 6th conductive beam be include at least one
Strip, the column structure of folding.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110146177A (en) * | 2019-05-23 | 2019-08-20 | 北京北方高业科技有限公司 | A kind of preparation method of temperature-detecting device |
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