CN110146177A - A kind of preparation method of temperature-detecting device - Google Patents
A kind of preparation method of temperature-detecting device Download PDFInfo
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- CN110146177A CN110146177A CN201910435626.8A CN201910435626A CN110146177A CN 110146177 A CN110146177 A CN 110146177A CN 201910435626 A CN201910435626 A CN 201910435626A CN 110146177 A CN110146177 A CN 110146177A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
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Abstract
The embodiment of the invention discloses a kind of preparation methods of temperature-detecting device, by directly forming bonded layer on the temperature-sensing element (device) of temperature-detecting device, and it is based on CIS (CMOS Image Sensor) bonding and wafer thinning technique platform, signal-obtaining chip is passed through by bonded layer and temperature sensing chip bonding using hybrid bonded technique, and substrate is carried out thinned, it can simplify the preparation process of temperature-detecting device, improve product yield, cost is reduced, realizes mass production.
Description
Technical field
The present embodiments relate to temperature detection technical field more particularly to a kind of preparation methods of temperature-detecting device.
Background technique
One kind can experience temperature when temperature sensor, and by the temperature transition experienced at the sensing of exportable signal
Device.According to measurement method, temperature sensor can be divided into contact type temperature sensor and non-contact temperature sensor.Wherein, non-
In thermometric, sensing element and the measurand of non-contact sensor are not in contact with each other contact type temperature sensor, can be used for measuring
Moving object, Small object and thermal capacity is small or temperature change the surface temperature of (transition) object and measures the temperature in temperature field rapidly
Degree distribution etc..
The different function component of the chip of non-contact temperature sensor is needed in different technique producing lines in the prior art
Upper preparation, this is allowed for, and temperature sensor chip preparation process is complicated, and product yield is low, and preparation cost is higher.
Summary of the invention
For above-mentioned there are problem, the embodiment of the present invention provides a kind of preparation method of temperature-detecting device, is able to solve
The technical problem that the preparation process of temperature-detecting device is complicated in the prior art, higher cost and product yield are low.
The embodiment of the invention provides a kind of preparation methods of temperature-detecting device, comprising:
One substrate is provided；
In the side formation temperature sensing chip of the substrate；
Bonded layer is formed away from the side of the substrate in the temperature sensing chip；
One signal-obtaining chip is provided；
The signal-obtaining chip is passed through by the bonded layer and the temperature sensing chip using hybrid bonded technique
Bonding；
Wherein, in the side formation temperature sensing chip of the substrate, comprising:
Formation temperature sensing element in the substrate；
The side formation temperature absorber element of temperature-sensing element (device) is formed in the substrate；
Deviate from the side formation temperature conducting structure of the substrate in the temperature absorber element；The temperature conducting structure
Temperature conduction element including transmitting medium layer and in the transmitting medium layer；
The preparation method further include:
It carries out thinned away from the side of the bonded layer to the substrate and etches, it is sensitive that the temperature is not formed in removal
The substrate at the position of element, to expose the temperature-sensing element (device)；
The transmitting medium layer in the temperature conducting structure is removed, to expose the temperature conduction element.
Optionally, formation temperature sensing element in the substrate, comprising:
The substrate is performed etching, pixel unit isolated groove is formed；
Spacer medium is filled in the isolated groove；
N-type ion and P-type ion are injected in the substrate between two adjacent isolated grooves, to form PN
Knot.
Optionally, the side formation temperature absorber element of temperature-sensing element (device) is formed in the substrate, comprising:
First medium layer is deposited in the side that the substrate is formed with temperature-sensing element (device)；
The first medium layer is performed etching, metamaterial structure groove and the first via hole are formed；First via hole
Expose the electrode of the temperature-sensing element (device)；
Meta Materials are filled in the metamaterial structure groove, form metamaterial structure；
Second dielectric layer is deposited away from the side of the substrate in the first medium layer；
The second dielectric layer is performed etching, the first conductive structure groove is formed and is located at first conductive structure
The second via hole in groove and through the second dielectric layer；Second via hole exposes the electrode of the temperature-sensing element (device)；
The first conductive material is filled in the first conductive structure groove and the second via hole, to form the first conductive knot
Structure；First conductive structure is electrically connected by second via hole with the temperature-sensing element (device)；
The first spacer medium layer is formed away from the side of the first medium layer in the second dielectric layer；
Wherein, the metamaterial structure and first conductive structure constitute temperature absorber element.
Optionally, the first medium layer is identical with the material of the second dielectric layer, and the first medium layer and institute
The material for stating second dielectric layer is different from the material of the transmitting medium layer；
The first medium layer and the material of the second dielectric layer include silicon carbide, agraphitic carbon, silica and nitridation
At least one of silicon.
Optionally, the transmitting medium layer includes third dielectric layer and the second spacer medium layer；Member is absorbed in the temperature
Part deviates from the side formation temperature conducting structure of the substrate, comprising:
Third dielectric layer is deposited away from the side of the substrate in the temperature absorber element；
The third dielectric layer is performed etching, the second conductive structure groove is formed；
The second conductive material is filled in the second conductive structure groove structure, to form the second conductive structure；
The second spacer medium layer is formed away from the side of the substrate in the third dielectric layer；
Wherein, second conductive structure constitutes the temperature conduction element.
Optionally, before the temperature sensing chip forms bonded layer away from the side of the substrate, further includes:
Reflecting layer is formed away from the side of the substrate in the temperature conducting structure；
Correspondingly, forming bonded layer away from the side of the substrate in the temperature sensing chip, comprising:
The 4th dielectric layer is formed away from the side of the substrate in the temperature sensing chip；
4th dielectric layer is performed etching, third conductive structure groove is formed and is located at the third conductive structure
Third via hole in groove and through the 4th dielectric layer；The third via hole exposes the reflecting layer；
Third conductive material is filled, in the third conductive structure groove and third via hole to form third conduction knot
Structure；The third conductive structure is electrically connected by the third via hole with the reflecting layer.
Optionally, the material in the reflecting layer includes in tantalum, tantalum nitride, titanium, titanium nitride, nickel, platinum, cobalt and nickel-silicon compound
It is at least one or at least two constitute alloy.
Optionally, the signal-obtaining chip is passed by the bonded layer and the temperature using hybrid bonded technique
Sense chip bonding, comprising:
Using hybrid bonded technique, by the bonding structure of the signal-obtaining chip and the third conductive structure key
It closes, so that the signal-obtaining chip and the temperature sensing chip bonding.
Optionally, the material of the 4th dielectric layer includes: silica, silicon carbide, agraphitic carbon, polysilicon, silicon nitride
And at least one of organic matter；
It includes: Damascus that the technique of third conductive material is filled in the third conductive structure groove and third via hole
One of plating, bottom-up plating, sputtering, atomic layer deposition and chemical gaseous phase deposition；
The third conductive material include: at least one of copper, aluminium, tungsten, platinum, titanium, germanium silicon compound or titanium nitride or
The alloy that person at least two is constituted.
Optionally, carrying out thinned technique away from the side of the bonded layer to the substrate includes: mechanical lapping, dry method
Etching, at least one of wet etching and chemically mechanical polishing；
The technique for removing the transmitting medium layer in the temperature conducting structure includes: orientation gas attack.
The embodiment of the invention provides a kind of preparation methods of temperature-detecting device, by sequentially forming temperature on substrate
Sensing chip and bonded layer, signal-obtaining chip is passed through bonded layer and temperature sensing chip key using hybrid bonded technique
It closes, and substrate is thinned and is etched away from the side of bonded layer, the temperature-sensing element (device) of retening temperature sensing chip.Phase
CMOS technology and/or MEMS technology are based on for temperature-detecting device overall structure in the prior art, the embodiment of the present invention passes through
Bonded layer is directly formed on the temperature sensing chip of temperature-detecting device, and is bonded based on CIS (CMOS Image Sensor)
Reduction process platform, using hybrid bonded technique by signal-obtaining chip by bonded layer and temperature sensing chip bonding, and
Substrate is carried out thinned, can simplify the preparation process of temperature-detecting device, improve product yield, reduce cost, realize batch
Metaplasia produces.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the preparation method of temperature-detecting device provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the preparation flow of the temperature-detecting device of corresponding diagram 1；
Fig. 3 is a kind of flow chart of the preparation method of temperature sensing chip provided in an embodiment of the present invention；
Fig. 4 is the structural schematic diagram of the preparation flow of the temperature sensing chip of corresponding diagram 3；
Fig. 5 is a kind of flow chart of the preparation method of temperature-sensing element (device) provided in an embodiment of the present invention；
Fig. 6 is the structural schematic diagram of the preparation flow of the temperature-sensing element (device) of corresponding diagram 5；
Fig. 7 is a kind of flow chart of the preparation method of formation temperature absorber element provided in an embodiment of the present invention；
Fig. 8 is the structural schematic diagram of the preparation flow of the temperature absorber element of corresponding diagram 7；
Fig. 9 is a kind of flow chart of the preparation method of temperature conduction element provided in an embodiment of the present invention；
Figure 10 is the structural schematic diagram of the preparation flow of the temperature conduction element of corresponding diagram 9；
Figure 11 is the flow chart of the preparation method of another temperature-detecting device provided in an embodiment of the present invention；
Figure 12 is the structural schematic diagram of the preparation flow of the temperature-detecting device of corresponding diagram 11.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
The embodiment of the present invention provides a kind of preparation method of temperature-detecting device, the preparation method system of the temperature-detecting device
Standby temperature-detecting device can be used for non-contact temperature detection and thermal imaging.Fig. 1 is one kind provided in an embodiment of the present invention
The flow chart of the preparation method of temperature-detecting device；Fig. 2 is the structural representation of the preparation flow of the temperature-detecting device of corresponding diagram 1
Figure.The preparation method of temperature-detecting device provided in an embodiment of the present invention includes: combined with Figure 1 and Figure 2,
S110, a substrate is provided.
S120, the side formation temperature sensing chip in the substrate.
Specifically, the material of substrate 10 for example can be but be not limited to crystalline silicon.Temperature sensing chip is formed on the substrate
20, which can be collected and perceive to the heat radiation of object, and convert electricity for the heat radiation being collected into
Signal.It at least should include temperature-sensing element (device) 21, temperature absorber element 22 and temperature conduction element 23 in temperature sensing chip.
The temperature absorber element 22 is used to absorb the heat of testee radiation, and temperature-sensing element (device) 21 is used for sensing temperature absorber element
Temperature change, and convert electric signal for the temperature variations sensed, conducted by temperature conduction element 23.
Wherein, the temperature-sensing element (device) 21 of temperature sensing chip, temperature absorber element 22 and temperature conduction element 232 it
Between be connected with each other, to transmit signal, so that temperature sensing chip is realized to the detection function of object or environment temperature.The temperature is quick
The mode that sensing unit 21, temperature absorber element 22 and temperature conduction element 232 transmit signal for example can be but be not limited to lead to
Cross conductive metallic material transmitting signal.
Fig. 3 is a kind of flow chart of the preparation method of temperature sensing chip provided in an embodiment of the present invention；Fig. 4 is corresponding diagram
The structural schematic diagram of the preparation flow of 3 temperature sensing chip.In conjunction with Fig. 3 and Fig. 4, core is sensed in 10 side formation temperature of substrate
The method of piece 20 specifically includes:
S121, in the substrate formation temperature sensing element.
S122, the side formation temperature absorber element that temperature-sensing element (device) is formed in the substrate.
S123, the side formation temperature conducting structure for deviating from the substrate in the temperature absorber element；The temperature passes
Guide structure includes transmitting medium layer and the temperature conduction element in the transmitting medium layer.
The mode of formation temperature sensing element 21 can be the mode of ion implanting in substrate 10.Wherein, in substrate 10
The temperature-sensing element (device) 21 of formation can be one or more.When forming multiple temperature-sensing element (device)s 21 in substrate 10, institute
The multiple temperature-sensing element (device)s 21 formed can be with array arrangement in substrate 10.
In the side formation temperature absorber element 22 for the substrate 10 for being formed with temperature-sensing element (device) 21.The temperature absorber element
22 can have various structures, and the temperature absorber element 22 is connect with temperature-sensing element (device) 21, so that temperature absorber element 22
The temperature change for absorbing radiation and occurring can be collected and be perceived by temperature-sensing element (device) 21.Wherein, it is formed by temperature absorption
Element 22 can be for example blocky, crosswise or annular shape.
Deviate from the side formation temperature transport element 232 of substrate 10, and the temperature conduction element in temperature absorber element 22
232 connect with temperature absorber element 22 and temperature-sensing element (device) 21, so that the radiation that temperature absorber element 22 absorbs is quick through temperature
Sensing unit 21 can be transmitted after being converted to electric signal by temperature conduction element 232 or temperature absorber element 22 absorbs
After heat radiation generates temperature change, it can be conducted through temperature conduction element 232.Wherein, for convenient for temperature conduction element 232
Preparation, corresponding transmitting medium layer 231, then the formation temperature transport element 232 in transmitting medium layer 231 need to be initially formed.Cause
This, being away from the formation of the side of substrate 10 in temperature absorber element 22 includes transmitting medium layer 231 and temperature conduction element 232
Temperature conducting structure 23.
S130, bonded layer is formed away from the side of the substrate in the temperature sensing chip.
Specifically, can be one layer or more in the bonded layer 30 that the side that substrate 10 is formed with temperature sensing chip 20 is formed
Layer structure.Bonded layer 30 can be flood structure, or block structure, under the premise of can be realized key function, this
Inventive embodiments do not limit this.Illustratively, bonded layer 30 may include bonding material, the function bond energy of the bonding material
It is enough to be broken under given conditions, and reconnected with the function key of other materials, realize key function.
S140, a signal-obtaining chip is provided.
S150, the signal-obtaining chip is passed through by the bonded layer and the temperature sensing using hybrid bonded technique
Chip bonding.
Specifically, temperature sensing chip 20 can be collected and perceive to the heat radiation of object in temperature-detecting device,
And it is transmitted after by collected heat radiation converting electric signal.Since the electric signal that temperature sensing chip 20 converts can pass through
Signal-obtaining chip 40 is read out, handles and exports, therefore temperature sensing chip 20 need to be connect with signal-obtaining chip 40.This
In inventive embodiments, temperature sensing chip 20 is bonded together with signal-obtaining chip 40 by bonded layer 30, and temperature passes
Sense chip 20 can be using similar to imaging sensor by way of being bonded with signal-obtaining chip 40 bonded layer 30
Hybrid bonded technology.Wherein, the bonding technology between temperature sensing chip 20 and signal-obtaining chip 40 can be in CIS (cmos
Image sensor) it completes on bonding and wafer thinning technique platform.
S160, it carries out thinned away from the side of the bonded layer to the substrate and etches, the temperature is not formed in removal
The substrate at the position of sensing element is spent, to expose the temperature-sensing element (device).
Specifically, the temperature-sensing element (device) of the thermal radiation transmission of object temperature sensing chip 20 into temperature-detecting device
21, so that temperature-sensing element (device) 21 is collected and perceives to the heat radiation.Complete temperature sensing chip 20 and signal-obtaining
After the bonding technology of chip 40, substrate 10 need to be carried out be thinned and and etch, to remove extra substrate 10, only retain the temperature
The temperature-sensing element (device) 21 of sensing chip 20, so that heat radiation is without the substrate for needing guiding through the lower section of temperature-sensing element (device) 21, and can
It is directly transferred to temperature-sensing element (device) 21.Wherein, carrying out thinned technique to substrate 10 can be in CIS (cmos image
Sensor it) is completed on bonding and wafer thinning technique platform.Carrying out thinned technique for example to substrate 10 can carve for mechanical lapping, dry method
It loses, at least one of wet etching and chemically mechanical polishing.
Transmitting medium layer in S170, the removal temperature conducting structure, to expose the temperature conduction element.
Specifically, after completing the thinned and etching of substrate 10, between temperature-sensing element (device) 21 and temperature-sensing element (device) 21
Corresponding dielectric layer can be exposed.To prevent from being lost in signals transmission due to the presence of dielectric layer, temperature can be passed
Transmitting medium layer 231 in guide structure 23 removes, and only retains the temperature conduction element 232 of transmitting signal.Wherein, removal conduction is situated between
The method of matter layer 231 can be for example the method for orientation gas attack.
The embodiment of the present invention directly forms bonded layer on the temperature-sensing element (device) of temperature-detecting device, and is based on CIS
(CMOS Image Sensor) bonding and wafer thinning technique platform, passes through bonding for signal-obtaining chip using hybrid bonded technique
Layer and temperature sensing chip bonding, and substrate is carried out thinned, it can simplify the preparation process of temperature-detecting device, improve product
Yield reduces cost, realizes mass production.
Optionally, temperature-detecting device may include multiple temperature-sensing element (device)s, which can array arrangement
In on substrate, to form the temperature-detecting device of array.Temperature-sensing element (device) can pass through picture in the temperature-detecting device of the array
The mode of element isolation and ion implanting obtains.Fig. 5 is a kind of preparation method of temperature-sensing element (device) provided in an embodiment of the present invention
Flow chart；Fig. 6 is the structural schematic diagram of the preparation flow of the temperature-sensing element (device) of corresponding diagram 5.In conjunction with Fig. 5 and Fig. 6, in substrate
The method of upper formation temperature sensing element includes:
S1211, the substrate is performed etching, forms pixel unit isolated groove.
Specifically, performing etching to substrate 10, to form pixel unit isolation channel 1011, it is single to isolate multiple pixel sensings
Member 110.Each pixel sensor cell 110 may include one or more identical or different devices.Illustratively, when pixel senses
When unit 100 includes at least two device, device isolated groove 1012 need to be also formed in pixel sensor cell 110.
S1212, spacer medium is filled in the isolated groove.
Specifically, filling spacer medium 1021 and 1022 in the isolated groove (1011 and 1012) of formation, which is situated between
The material of matter 1021 and 1022 for example can appointing for silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride
It anticipates a kind of or at least two combined materials.The mode for filling spacer medium 1021 and 1022 for example can be plasma deposition
And/or chemical vapor deposition etc..
N-type ion and P-type ion are injected in S1213, adjacent two substrates between the isolated groove, with
Form PN junction.
Specifically, injection substrate in N-type ion and P-type ion between adjacent isolated groove 1012, in phase
PN junction 201 is formed between adjacent isolated groove 1012.The PN junction 201 can be used as the component part of temperature-sensing element (device) 21.
It should be noted that the pixel sensor cell 110 formed on substrate 10 can be merely exemplary in Fig. 6 to be multiple
It is illustrated in case where two pixel sensor cells 110.When multiple pixel sensor cells are formed on the substrate, technology
Principle is similar with the technical principle of two pixel sensor cells shown in fig. 6, and details are not described herein.Meanwhile temperature-sensing element (device)
It may include one or more PN junctions 201 in 21, can also include other components for stablizing perception and collecting, in Fig. 6 only
Illustratively it is illustrated by taking two PN junctions 201 as an example.It include multiple PN junctions 201 and/or other use in temperature-sensing element (device) 21
When temperature sensing and the component of collection, the technical principle of preparation process is similar with technical principle shown in fig. 6, herein no longer
It repeats.
Optionally, temperature absorber element can be used for absorbing the heat of testee radiation.The temperature absorber element can be by
Multiple film layers are constituted, and the preparation process between each film layer has difference.Fig. 7 is a kind of formation temperature provided in an embodiment of the present invention
Spend the flow chart of the preparation method of absorber element；Fig. 8 is the structural representation of the preparation flow of the temperature absorber element of corresponding diagram 7
Figure.In conjunction with Fig. 7 and Fig. 8, include: in the method that substrate is formed with the side formation temperature absorber element of temperature-sensing element (device)
S1221, first medium layer is deposited in the side that the substrate is formed with the temperature-sensing element (device).
Specifically, can be by chemical vapor deposition or plasma in the side that substrate 10 is formed with temperature-sensing element (device) 21
The method of deposit forms first medium layer 221.The material of the first medium layer 221 for example can be fixed for silica, silicon carbide, nothing
At least one of type carbon, organic matter, polysilicon and silicon nitride.
S1222, the first medium layer is performed etching, forms metamaterial structure groove and the first via hole；Described
One via hole exposes the electrode of the temperature-sensing element (device).
S1223, Meta Materials are filled in the metamaterial structure groove, form metamaterial structure.
Specifically, the method performed etching to first medium layer 221 can be for example dry etching method, to form metamaterial structure
Groove 2201 and the first via hole 2202.Meta Materials 2211 are filled in metamaterial structure groove 2201, which can
Improve the absorptivity and Absorber Bandwidth of heat radiation.
S1224 deposits second dielectric layer away from the side of the substrate in the first medium layer.
Specifically, deposition second dielectric layer 222 method for example can with chemical vapor deposition or plasma deposition.It should
The material of second dielectric layer 222 for example can be in silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride
It is at least one.Wherein, optionally, the material of first medium layer 221 and the material of second dielectric layer 222 can be same material.
Meanwhile when to prevent from removing the transmitting medium layer of conducting structure, first medium layer 221 and second dielectric layer 222 are destroyed, preferably
, the material of transmitting medium layer is different from the material of first medium layer 221 and second dielectric layer 222.
S1225, the second dielectric layer is performed etching, form the first conductive structure groove and is led positioned at described first
The second via hole in electric texture grooves and through the second dielectric layer；Second via hole exposes the temperature-sensing element (device)
Electrode.
S1226, the first conductive material is filled in the first conductive structure groove and the second via hole, to form first
Conductive structure；First conductive structure is electrically connected by second via hole with the temperature-sensing element (device)；Wherein, described super
Material structure and first conductive structure constitute temperature absorber element.
Specifically, the method performed etching to second dielectric layer 222 can be for example dry etching method, to form the first conductive knot
Structure groove 2203 and in the first conductive structure groove 2203 and run through second dielectric layer 222 the second via hole 2204.This
Two via holes 2204 are corresponding with the first via hole 2202, can expose the electricity of temperature-sensing element (device) 21 after forming the second via hole 2204
Pole, and the first conductive structure 2212 is filled in the first conductive structure groove 2203, the first via hole 2202 and the second via hole 2204.
Wherein, the method for filling the first conductive structure 2212 for example can be but be not limited to Damascus plating, bottom-up plating, splash
It penetrates, one of atomic layer deposition and chemical gaseous phase deposition.Correspondingly, being formed by metamaterial structure 2211 and the first conductive knot
Structure 2212 collectively forms temperature absorber element.
S1227, the first spacer medium layer is formed away from the side of the first medium layer in the second dielectric layer.
Specifically, forming the 223 of the first spacer medium layer away from the side of first medium layer 221 in second dielectric layer 222
Method for example can for gas ions deposit and/or chemical vapor deposition.The material of the first spacer medium layer 223 for example can be with
For at least one of silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride.Wherein, it is formed by first
Spacer medium layer 223 is for protecting temperature absorber element.
Optionally, temperature conduction element can be used for the electricity that transition temperature sensing element is collected and the heat radiation of perception is converted
Signal.The temperature conduction element needs that transmitting medium layer is combined to be prepared, which includes at least first medium layer
With the second spacer medium layer.Fig. 9 is a kind of flow chart of the preparation method of temperature conduction element provided in an embodiment of the present invention；Figure
10 be the structural schematic diagram of the preparation flow of the temperature conduction element of corresponding diagram 9.In conjunction with Fig. 9 and Figure 10, in temperature absorber element
Method away from the side formation temperature conducting structure of substrate includes:
S1231, third dielectric layer is deposited away from the side of the substrate in the temperature absorber element；
Specifically, passing through the deposition third dielectric layer 2311 such as method of plasma deposition and/or chemical vapor deposition.It should
The material of third dielectric layer 2311 for example can be in silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride
At least one.
S1232, the third dielectric layer is performed etching, forms the second conductive structure groove.
The second conductive material is filled in S1233, the second conductive structure groove structure, to form the second conductive structure；
Wherein, second conductive structure constitutes the temperature conduction element.
Specifically, third dielectric layer 2311 is performed etching by dry etching method, to form the second conductive structure groove 2301,
And the second conductive material is filled in the second conductive structure groove 2301.Optionally, it is filled in the second conductive structure groove 2301
The second conductive material for example can include but is not limited in copper, aluminium, tungsten, platinum, titanium, germanium silicon compound or titanium nitride at least one
Kind.Wherein, the method for the second conductive material of filling for example can be but be not limited to Damascus plating, it is bottom-up plating,
One of sputtering, atomic layer deposition and chemical gaseous phase deposition.Wherein, the second conductive material of filling is formed by the second conductive knot
Structure is temperature conduction element 232.
S1234, the second spacer medium layer is formed away from the side of the substrate in the third dielectric layer.
Specifically, specifically, forming the 2312 of the second spacer medium layer away from the side of substrate 10 in third dielectric layer 231
Method for example can for gas ions deposit and/or chemical vapor deposition.The material of the second spacer medium layer 2312 can be with
The material of three dielectric layers 231 is identical, and the material of the material of third dielectric layer and the second spacer medium layer 2312 is situated between with first
The material of matter layer, second dielectric layer and the first spacer medium layer is different.Illustratively, the material of the second spacer medium layer 2312
It can be at least one of silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride.Wherein, the of formation
The effect of two spacer medium layers 2312 is the formation convenient for temperature conduction element 232.
In addition, being completed to enable temperature conduction element in transition temperature and electric signal to be the not interference by dielectric layer
After the reduction process of substrate, can also by orient gas attack method will affect temperature conduction element the second spacer medium layer and
The removal of third dielectric layer.When the material of the second spacer medium layer and third dielectric layer is silica and/or organic matter, can lead to
Cross hydrogen fluoride gas, oxygen erodes heat transmission unit medium silica or organic matter.
Optionally, it is passed in temperature conduction element to prevent from removing transmitting medium layer and temperature in temperature conducting structure
When leading, para-linkage layer is impacted, and one layer of reflecting layer can be formed between temperature conducting structure and bonded layer.Figure 11 is the present invention
The flow chart of the preparation method for another temperature-detecting device that embodiment provides；Figure 12 is the temperature-detecting device of corresponding diagram 11
Preparation flow structural schematic diagram.In conjunction with Figure 11 and Figure 12, the preparation method packet of temperature-detecting device in the embodiment of the present invention
It includes:
S210, a substrate is provided.
S220, the side formation temperature sensing chip in the substrate；Wherein, it is passed in the side formation temperature of the substrate
Sense chip specifically includes: formation temperature sensing element in the substrate；The temperature-sensing element (device) is formed in the substrate
Side formation temperature absorber element；Deviate from the side formation temperature conducting structure of the substrate in the temperature absorber element；
The temperature conducting structure includes transmitting medium layer and the temperature conduction element in the transmitting medium layer.
S230, reflecting layer is formed away from the side of the substrate in the temperature conducting structure.
Specifically, being used as one layer of diffusion barrier away from the reflecting layer 50 that the side of substrate 10 is formed in temperature conducting structure 23
Layer, to prevent heat from conducting to it away from the side of substrate 10.It the reflecting layer 50 can use atomic layer deposition, sputtering or chemistry
It is prepared by the method for vapor deposition.The material in the reflecting layer 50 can be tantalum, tantalum nitride, titanium, titanium nitride, nickel, platinum, cobalt and nickel
At least one of silicon compound or above-mentioned any alloy that two or more is constituted.
S240 forms the 4th dielectric layer away from the side of the substrate in the temperature sensing chip.
Specifically, passing through the 4th dielectric layer 31 of deposition such as method of plasma deposition and/or chemical vapor deposition.This
The material of four dielectric layers 31 for example can in silica, silicon carbide, agraphitic carbon, organic matter, polysilicon and silicon nitride extremely
Few one kind.
S250, the 4th dielectric layer is performed etching, form third conductive structure groove and is led positioned at the third
Third via hole in electric texture grooves and through the 4th dielectric layer；The third via hole exposes the reflecting layer.
S260, third conductive material is filled in the third conductive structure groove and third via hole, led with forming third
Electric structure；The third conductive structure is electrically connected by the third via hole with the reflecting layer.
Specifically, being performed etching by dry etching method to the 4th dielectric layer 31, to form third conductive structure groove 301 and position
It is filled in the third via hole 302 of third conductive structure groove 301, and in third conductive structure groove 301 and third via hole 302
Third conductive material, the third conductive material include third conductive structure 32, and the third conductive structure 32 can pass through third
The third conductive material that via hole 302 is filled is electrically connected with reflecting layer 50.Wherein, third conductive structure groove 301 and third via hole
The third conductive material of 302 fillings can be identical material or different materials.Optionally, third conductive structure groove 301
With third via hole 302 fill third conductive material it is identical, third conductive material for example can include but is not limited to copper, aluminium, tungsten,
At least one of platinum, titanium, germanium silicon compound or titanium nitride.Wherein, the method for the third conductive material of filling for example can be
One of but be not limited to Damascus plating, bottom-up plating, sputtering, atomic layer deposition and chemical gaseous phase deposition.
S270, a signal-obtaining chip is provided
S280 uses hybrid bonded technique, by the bonding structure of the signal-obtaining chip and the third conductive structure
Bonding, so that the signal-obtaining chip and the temperature sensing chip bonding.
Specifically, after filling third conductive material, can by hybrid bonded process conditions by third conductive material 32 with
The bonding structure of signal-obtaining chip 40 is bonded together, to realize the key of signal-obtaining chip 40 Yu temperature sensing chip 20
It closes.
S290, it carries out thinned away from the side of the bonded layer to the substrate and etches, the temperature is not formed in removal
The substrate at the position of sensing element is spent, to expose the temperature-sensing element (device).
Transmitting medium layer in S2100, the removal temperature conducting structure, to expose the temperature conduction element.
The preparation method of temperature-detecting device provided in an embodiment of the present invention, by directly in the temperature of temperature-detecting device
Bonded layer is formed on sensing element, and is based on CIS (CMOS Image Sensor) bonding and wafer thinning technique platform, using mixing key
Signal-obtaining chip is bonded by bonded layer with temperature-sensing element (device) by the technique of conjunction, and carries out to substrate thinned, can be simplified
The preparation process of temperature-detecting device improves product yield, reduces cost, realizes mass production.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of preparation method of temperature-detecting device characterized by comprising
One substrate is provided；
In the side formation temperature sensing chip of the substrate；
Bonded layer is formed away from the side of the substrate in the temperature sensing chip；
One signal-obtaining chip is provided；
The signal-obtaining chip is passed through by the bonded layer and the temperature sensing chip bonding using hybrid bonded technique；
Wherein, in the side formation temperature sensing chip of the substrate, comprising:
Formation temperature sensing element in the substrate；
The side formation temperature absorber element of the temperature-sensing element (device) is formed in the substrate；
Deviate from the side formation temperature conducting structure of the substrate in the temperature absorber element；The temperature conducting structure includes
Transmitting medium layer and the temperature conduction element in the transmitting medium layer；
The preparation method further include:
It carries out thinned away from the side of the bonded layer to the substrate and etches, the temperature-sensing element (device) is not formed in removal
Position at the substrate, to expose the temperature-sensing element (device)；
The transmitting medium layer in the temperature conducting structure is removed, to expose the temperature conduction element.
2. preparation method according to claim 1, which is characterized in that formation temperature sensing element in the substrate, packet
It includes:
The substrate is performed etching, pixel unit isolated groove is formed；
Spacer medium is filled in the isolated groove；
N-type ion and P-type ion are injected in the substrate between two adjacent isolated grooves, to form PN junction.
3. preparation method according to claim 1, which is characterized in that be formed with the temperature-sensing element (device) in the substrate
Side formation temperature absorber element, comprising:
First medium layer is deposited in the side that the substrate is formed with the temperature-sensing element (device)；
The first medium layer is performed etching, metamaterial structure groove and the first via hole are formed；First via hole exposes
The electrode of the temperature-sensing element (device)；
Meta Materials are filled in the metamaterial structure groove, form metamaterial structure；
Second dielectric layer is deposited away from the side of the substrate in the first medium layer；
The second dielectric layer is performed etching, the first conductive structure groove is formed and is located at the first conductive structure groove
The second via hole that is interior and running through the second dielectric layer；Second via hole exposes the electrode of the temperature-sensing element (device)；
The first conductive material is filled in the first conductive structure groove and the second via hole, to form the first conductive structure；
First conductive structure is electrically connected by second via hole with the temperature-sensing element (device)；
The first spacer medium layer is formed away from the side of the first medium layer in the second dielectric layer；
Wherein, the metamaterial structure and first conductive structure constitute temperature absorber element.
4. preparation method according to claim 3, which is characterized in that the first medium layer and the second dielectric layer
Material is identical, and the first medium layer and the material of the second dielectric layer are different from the material of the transmitting medium layer；
The first medium layer and the material of the second dielectric layer include silicon carbide, agraphitic carbon, silica and silicon nitride
It is at least one.
5. preparation method according to claim 1, which is characterized in that the transmitting medium layer includes third dielectric layer and
Two spacer medium layers；Deviate from the side formation temperature conducting structure of the substrate in the temperature absorber element, comprising:
Third dielectric layer is deposited away from the side of the substrate in the temperature absorber element；
The third dielectric layer is performed etching, the second conductive structure groove is formed；
The second conductive material is filled in the second conductive structure groove structure, to form the second conductive structure；
The second spacer medium layer is formed away from the side of the substrate in the third dielectric layer；
Wherein, second conductive structure constitutes the temperature conduction element.
6. preparation method according to claim 1, which is characterized in that in the temperature sensing chip away from the substrate
Side is formed before bonded layer, further includes:
Reflecting layer is formed away from the side of the substrate in the temperature conducting structure；
Correspondingly, forming bonded layer away from the side of the substrate in the temperature sensing chip, comprising:
The 4th dielectric layer is formed away from the side of the substrate in the temperature sensing chip；
4th dielectric layer is performed etching, third conductive structure groove is formed and is located at the third conductive structure groove
Third via hole that is interior and running through the 4th dielectric layer；The third via hole exposes the reflecting layer；
Third conductive material is filled, in the third conductive structure groove and third via hole to form third conductive structure；Institute
It states third conductive structure and is electrically connected by the third via hole with the reflecting layer.
7. preparation method according to claim 6, which is characterized in that the material in the reflecting layer include tantalum, tantalum nitride,
The alloy of at least one of titanium, titanium nitride, nickel, platinum, cobalt and nickel-silicon compound or at least two compositions.
8. preparation method according to claim 6, which is characterized in that use hybrid bonded technique by the signal-obtaining core
Piece passes through the bonded layer and the temperature sensing chip bonding, comprising:
Using hybrid bonded technique, the bonding structure of the signal-obtaining chip is bonded with the third conductive structure, with
Make the signal-obtaining chip and the temperature sensing chip bonding.
9. preparation method according to claim 6, which is characterized in that the material of the 4th dielectric layer include: silica,
At least one of silicon carbide, agraphitic carbon, polysilicon, silicon nitride and organic matter；
The technique that third conductive material is filled in the third conductive structure groove and third via hole includes: Damascus electricity
One of plating, bottom-up plating, sputtering, atomic layer deposition and chemical gaseous phase deposition；
The third conductive material includes: at least one of copper, aluminium, tungsten, platinum, titanium, germanium silicon compound or titanium nitride or extremely
The alloy of few two kinds of compositions.
10. preparation method according to claim 1, which is characterized in that deviate from the side of the bonded layer to the substrate
Carry out at least one that thinned technique includes: mechanical lapping, dry etching, wet etching and chemically mechanical polishing；
The technique for removing the transmitting medium layer in the temperature conducting structure includes: orientation gas attack.
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