JPS63250865A - Pressure detecting element and manufacture thereof - Google Patents

Pressure detecting element and manufacture thereof

Info

Publication number
JPS63250865A
JPS63250865A JP8646787A JP8646787A JPS63250865A JP S63250865 A JPS63250865 A JP S63250865A JP 8646787 A JP8646787 A JP 8646787A JP 8646787 A JP8646787 A JP 8646787A JP S63250865 A JPS63250865 A JP S63250865A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
pressure
substrate
diaphragm
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8646787A
Other versions
JP2508070B2 (en )
Inventor
Susumu Azeyanagi
Tetsuo Fujii
Original Assignee
Nippon Denso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a pressure detecting element which has a small size, can stably measure a pressure even at high temperature, has uniform element characteristics and high sensitivity by forming a pressure sensitive layer made of a single crystal semiconductor on the diaphragm of a first insulating layer, and etching a substrate under the diaphragm to form a cavity.
CONSTITUTION: A substrate 1, a first insulating layer 5 bonded to the main surface of the substrate 1 and having good etching resistance, a pressure sensitive layer 11 made of a single crystal semiconductor formed on the diaphragm of the layer 5, second insulating layers 12, 13 so formed as to cover the layer 11, a cavity 15 so formed by etching the substrate 1 under the diaphragm of the layer 5 through an etching hole 14 formed through the layers 12, 13 and 5 perpendicularly to the substrate 1 at the periphery of the diaphragm, and a sealing material 16 for sealing the hole 14. Since the layer 11 is composed of the single crystal semiconductor in this manner, detecting characteristics between the elements are uniformized, and the pressure sensitive layer is surrounded by the first and second insulating layers. Therefore, when it is used at a high temperature, no leakage current is generated to stabilize the detecting characteristics.
COPYRIGHT: (C)1988,JPO&Japio
JP8646787A 1987-04-08 1987-04-08 Pressure sensing device and a manufacturing method thereof Expired - Fee Related JP2508070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8646787A JP2508070B2 (en) 1987-04-08 1987-04-08 Pressure sensing device and a manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8646787A JP2508070B2 (en) 1987-04-08 1987-04-08 Pressure sensing device and a manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS63250865A true true JPS63250865A (en) 1988-10-18
JP2508070B2 JP2508070B2 (en) 1996-06-19

Family

ID=13887762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8646787A Expired - Fee Related JP2508070B2 (en) 1987-04-08 1987-04-08 Pressure sensing device and a manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2508070B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5296730A (en) * 1992-01-16 1994-03-22 Oki Electric Industry Co., Ltd. Semiconductor pressure sensor for sensing pressure applied thereto
US5445991A (en) * 1993-12-24 1995-08-29 Kyungdook National University Sensor Technology Research Center Method for fabricating a semiconductor device using a porous silicon region
US5490034A (en) * 1989-01-13 1996-02-06 Kopin Corporation SOI actuators and microsensors
JP2003530234A (en) * 2000-04-07 2003-10-14 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Micromechanical structure element and the corresponding manufacturing method
JP2005246601A (en) * 2004-03-03 2005-09-15 Robert Bosch Gmbh Micro-machining type component and suitable manufacturing method
USRE40347E1 (en) 1992-04-27 2008-06-03 Denso Corporation Acceleration sensor and process for the production thereof
WO2012020930A2 (en) * 2010-08-13 2012-02-16 전자부품연구원 Capacitive pressure sensor and method for manufacturing same

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5490034A (en) * 1989-01-13 1996-02-06 Kopin Corporation SOI actuators and microsensors
US5493470A (en) * 1989-01-13 1996-02-20 Kopin Corporation SOI diaphragm sensor
US5552347A (en) * 1992-01-16 1996-09-03 Oki Electric Industry Co., Ltd. Fabrication process for a semiconductor pressure sensor for sensing pressure applied thereto
US5296730A (en) * 1992-01-16 1994-03-22 Oki Electric Industry Co., Ltd. Semiconductor pressure sensor for sensing pressure applied thereto
USRE40561E1 (en) 1992-04-27 2008-11-04 Denso Corporation Acceleration sensor and process for the production thereof
USRE41213E1 (en) 1992-04-27 2010-04-13 Denso Corporation Dynamic amount sensor and process for the production thereof
USRE41047E1 (en) 1992-04-27 2009-12-22 Denso Corporation Acceleration sensor and process for the production thereof
USRE42083E1 (en) 1992-04-27 2011-02-01 Denso Corporation Acceleration sensor and process for the production thereof
USRE40347E1 (en) 1992-04-27 2008-06-03 Denso Corporation Acceleration sensor and process for the production thereof
US5445991A (en) * 1993-12-24 1995-08-29 Kyungdook National University Sensor Technology Research Center Method for fabricating a semiconductor device using a porous silicon region
JP2003530234A (en) * 2000-04-07 2003-10-14 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Micromechanical structure element and the corresponding manufacturing method
JP2005246601A (en) * 2004-03-03 2005-09-15 Robert Bosch Gmbh Micro-machining type component and suitable manufacturing method
WO2012020930A2 (en) * 2010-08-13 2012-02-16 전자부품연구원 Capacitive pressure sensor and method for manufacturing same
WO2012020930A3 (en) * 2010-08-13 2012-05-03 전자부품연구원 Capacitive pressure sensor and method for manufacturing same
KR101215919B1 (en) 2010-08-13 2012-12-27 전자부품연구원 Capacitance-type pressure sensor and a method of producing
US8754453B2 (en) 2010-08-13 2014-06-17 Korea Electronics Technology Institute Capacitive pressure sensor and method for manufacturing same

Also Published As

Publication number Publication date Type
JP2508070B2 (en) 1996-06-19 grant

Similar Documents

Publication Publication Date Title
US3881181A (en) Semiconductor temperature sensor
US5283459A (en) Semiconductor sensor including an aperture having a funnel shaped section intersecting a second section
US4904978A (en) Mechanical sensor for high temperature environments
US4726232A (en) Temperature coefficient compensated pressure transducer
US4188258A (en) Process for fabricating strain gage transducer
US3819431A (en) Method of making transducers employing integral protective coatings and supports
US3916365A (en) Integrated single crystal pressure transducer
US5444901A (en) Method of manufacturing silicon pressure sensor having dual elements simultaneously mounted
US3820401A (en) Piezoresistive bridge transducer
US4930347A (en) Solid state microanemometer with improved sensitivity and response time
US5448444A (en) Capacitive pressure sensor having a reduced area dielectric spacer
US4768011A (en) Joint structure for diamond body and metallic body
JPS6159852A (en) Manufacture of semiconductor device
GB2194344A (en) Pressure transducer and method of fabricating same
JPS60136367A (en) Semiconductor integrated circuit device
JPS59159565A (en) Magnetic detector
JPH04218918A (en) Semiconductor device and its manufacture
US5170237A (en) Semiconductor pressure sensor
JPS63228710A (en) Semiconductor device
JPS57191539A (en) Semiconductor ion sensor
JPS63187713A (en) Integrated piezoelectric thin film function element
US4080830A (en) Pressure transducer
US5440931A (en) Reference element for high accuracy silicon capacitive pressure sensor
DE3445774A1 (en) Method for fabricating a capacitive semiconductor pressure pick-up
JPS6072277A (en) Pressure sensitive element and pressure sensor

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees