CN117664358B - Infrared detector pixel and infrared detector - Google Patents
Infrared detector pixel and infrared detector Download PDFInfo
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- CN117664358B CN117664358B CN202410044832.7A CN202410044832A CN117664358B CN 117664358 B CN117664358 B CN 117664358B CN 202410044832 A CN202410044832 A CN 202410044832A CN 117664358 B CN117664358 B CN 117664358B
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- 239000007787 solid Substances 0.000 claims description 48
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- 238000002161 passivation Methods 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
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- 238000002360 preparation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000003384 imaging method Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present disclosure provides an infrared detector pixel and an infrared detector, the infrared detector pixel including: the device comprises an absorption plate, a beam structure, a first columnar structure, a second columnar structure, a third columnar structure and a measurement circuit system, wherein a thermal signal caused by infrared radiation on the absorption plate is transmitted to a substrate in the measurement circuit system through the second columnar structure and the first columnar structure in sequence; the absorber plate converts the noise signal into an electrical signal and transmits the electrical signal to the measurement circuitry through the third columnar structure, the beam structure, and the first columnar structure. Through the technical scheme of the present disclosure, the influence of the thermal signal caused by infrared radiation on the result of detecting the electrical signal by the infrared detector is filtered, and the structural stability of the infrared detector pixel is enhanced.
Description
Technical Field
The disclosure relates to the technical field of infrared detectors, and in particular relates to an infrared detector pixel and an infrared detector.
Background
The non-contact infrared detector comprises a non-contact temperature measuring sensor, for example, and the detection principle is that the infrared detector converts an infrared radiation signal emitted by a target object to be detected into a thermal signal, the thermal signal is converted into an electric signal through a detector sensitive element, and then the electric signal is processed and output through a circuit chip, so that the infrared detector realizes an infrared detection function.
In the related art, a thermal signal caused by infrared radiation is generally transmitted through a beam structure of an infrared detector pixel, and the beam structure has small heat conduction and poor heat dissipation effect, such as a mirror image pixel and the like, which are structures for eliminating background noise and thermal noise of an effective pixel, and the structural design is mainly to avoid the absorption of infrared radiation as far as possible, namely, the thermal signal caused by infrared radiation can interfere the accuracy of the infrared detector on the measurement of an electric signal.
Disclosure of Invention
To solve or at least partially solve the above technical problems, the present disclosure provides an infrared detector pixel and an infrared detector.
In a first aspect, the present disclosure provides an infrared detector pixel comprising:
An absorber plate, a beam structure, a first columnar structure, a second columnar structure, a third columnar structure, and measurement circuitry;
The first columnar structure is positioned between the measurement circuit system and the beam structure, the beam structure is electrically connected with the measurement circuit system through the first columnar structure, the second columnar structure is positioned between the absorption plate and the first columnar structure, the second columnar structure is in contact with the first columnar structure, the third columnar structure is positioned between the absorption plate and the beam structure, and the absorption plate is electrically connected with the beam structure through the third columnar structure;
The heat signal caused by infrared radiation on the absorption plate is transmitted to the substrate in the measuring circuit system through the second columnar structure and the first columnar structure in sequence; the absorber plate converts noise signals into electrical signals and transmits the electrical signals to the measurement circuitry through the third columnar structure, the beam structure, and the first columnar structure.
Optionally, the thermal conductance of the second columnar structure is greater than the thermal conductance of the beam structure, and a thermal signal caused by infrared radiation is transmitted through the second columnar structure to the first columnar structure.
Optionally, the first columnar structure, the second columnar structure and the third columnar structure are solid columnar structures, and the material of the solid columnar structures comprises at least one of tungsten, aluminum or copper.
Optionally, the second columnar structure and the third columnar structure are located on the same layer.
Optionally, the beam structure includes a first metal layer, a first electrode layer, and a passivation layer, and the absorber plate includes a second metal layer, a third metal layer, an insulating layer, a heat sensitive layer, and a second electrode layer;
The first metal layer is positioned between the first columnar structure and the first electrode layer, the passivation layer is positioned at one side of the first electrode layer, which is away from the first metal layer, the second metal layer is positioned between the passivation layer and the second columnar structure, the heat sensitive layer is positioned at one side of the passivation layer, which is away from the measurement circuit system, and the third metal layer is positioned between the second electrode layer and the third columnar structure;
The thermal signal caused by infrared radiation on the thermosensitive layer is transmitted to the substrate in the measurement circuit system through the insulating layer, the second metal layer, the second solid structure, the first metal layer and the first solid structure in sequence;
The thermosensitive layer converts a noise signal into an electrical signal and transmits the electrical signal to the measurement circuitry through the second electrode layer, the third metal layer, the third solid structure, the first electrode layer, the first metal layer, and the first solid structure.
Optionally, the infrared detector pixel further comprises:
a reflective layer located on a side of the measurement circuitry facing the beam structure;
The reflecting layer comprises a supporting base and a reflecting plate, the reflecting plate is positioned between adjacent supporting bases, the first columnar structure is electrically connected with the supporting base, and the supporting base is electrically connected with the measuring circuit system;
The absorption plate converts noise signals into electrical signals and transmits the electrical signals to the measurement circuitry through the third columnar structure, the beam structure, the first columnar structure and the support base, and the reflection plate is used for reflecting infrared radiation.
In a second aspect, the present disclosure also provides an infrared detector comprising an infrared detector pixel as described in the first aspect.
Compared with the prior art, the technical scheme provided by the disclosure has the following advantages:
The infrared detector pixel and the infrared detector provided by the disclosure, the infrared detector pixel includes an absorption plate, a beam structure, a first columnar structure, a second columnar structure, a third columnar structure and a measurement circuit system, a thermal signal caused by infrared radiation on the absorption plate sequentially passes through the second columnar structure and the first columnar structure and is transmitted to a substrate in the measurement circuit system, before the measurement circuit system measures an electric signal converted by a noise signal of the absorption plate, the thermal signal caused by the infrared radiation is transmitted to the substrate, and the influence of the thermal signal caused by the infrared radiation on the result of detecting the electric signal by the infrared detector is filtered. In addition, set up the second column structure between absorption board and first column structure, the second column structure has played the supporting role, has also strengthened the structural stability of infrared detector pixel to can improve infrared detector's structural stability and shock resistance.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic perspective view of an infrared detector pixel according to an embodiment of the disclosure;
fig. 2 is a schematic cross-sectional structure of an infrared detector pixel according to an embodiment of the disclosure;
FIG. 3 is a schematic cross-sectional view of another embodiment of an infrared detector pixel according to the present disclosure;
fig. 4 is a schematic perspective view of an infrared detector according to an embodiment of the disclosure;
Fig. 5 is a schematic perspective view of another infrared detector according to an embodiment of the disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
An embodiment of the present disclosure provides an infrared detector pixel, and fig. 1 is a schematic three-dimensional structure diagram of the infrared detector pixel provided by the embodiment of the present disclosure, as shown in fig. 1, the infrared detector pixel includes: an absorber plate 1, a beam structure 2, a first columnar structure 3, a second columnar structure 4, a third columnar structure 5, and measurement circuitry 6; the first columnar structure 3 is positioned between the measuring circuit system 6 and the beam structure 2, the beam structure 2 is electrically connected with the measuring circuit system 6 through the first columnar structure 3, the second columnar structure 4 is positioned between the absorption plate 1 and the first columnar structure 3, the second columnar structure 4 is contacted with the first columnar structure 3, the third columnar structure 5 is positioned between the absorption plate 1 and the beam structure 2, and the absorption plate 1 is electrically connected with the beam structure 2 through the third columnar structure 5; the heat signal caused by the infrared radiation on the absorption plate 1 is sequentially transmitted to the substrate in the measuring circuit system 6 through the second columnar structure 4 and the first columnar structure 3 to filter the influence of the heat signal caused by the infrared radiation; the absorber plate 1 converts the noise signal into an electrical signal and transmits it through the third columnar structure 5, the beam structure 2 and the first columnar structure 3 to the measurement circuitry 6, maintaining the influence of the electrical signal measurement.
Specifically, as shown in fig. 1, the first columnar structure 3 is located between the measurement circuitry 6 and the beam structure 2, and the first columnar structure 3 is used for supporting the beam structure 2 and the absorber plate 1 after the sacrificial layer on the measurement circuitry 6 is released, and the first columnar structure 3 may be a metal structure, for example.
The absorber plate 1 can, for example, acquire a radiation signal, such as a thermal signal caused by infrared radiation from a target object, and a noise signal, such as an environmental background noise, a resistive thermal noise, and a substrate thermal noise, and can also be from noise generated during imaging due to non-uniformity deviations between pixels due to process or the like, including row noise and column noise, the absorber plate 1 converts the noise signal into an electrical signal, which can be transferred to the measurement circuitry 6 through the third columnar structure 5, the beam structure 2, and the first columnar structure 3.
In fig. 1 it is exemplarily shown that the infrared detector pixel comprises four first columnar structures 3 (only three first columnar structures 3 are visible in fig. 1 due to viewing angle problems), two of the first columnar structures 3 may be provided for transmitting positive electrical signals, the other two first columnar structures 3 for transmitting ground electrical signals, or the infrared detector pixel may be provided comprising two first columnar structures 3 for transmitting positive electrical signals and ground electrical signals, respectively. In addition, the specific details of the operation of the measurement circuitry 6 are well known to those skilled in the art, and will not be described here.
The radiation signal absorbed by the absorption plate 1, for example, the thermal signal caused by infrared radiation, is transferred to the substrate of the measurement circuitry 6 through the second columnar structure 4 and the first columnar structure 3, and before the measurement circuitry 6 measures the electrical signal, the thermal signal caused by infrared radiation on the absorption plate 1 is transferred to the substrate, so that the absorption plate 1 is not considered to respond to the infrared radiation signal, and the electrical signal generated by the absorption plate 1 is a noise signal, i.e. the influence of the thermal signal caused by infrared radiation is filtered.
The infrared detector comprises an effective pixel, for example, and the effective pixel is different from the infrared detector pixel provided by the embodiment of the disclosure in that the infrared detector pixel provided by the embodiment of the disclosure does not respond to an infrared radiation signal, that is, a thermal signal caused by the infrared radiation signal is led out to the substrate, and the effective pixel responds to the infrared radiation signal, that is, a signal generated by the effective pixel is superposition of the infrared radiation signal and a noise signal, and after noise reduction is performed on the signal generated by the effective pixel, the infrared radiation signal of a target object can be obtained, so that the accuracy of a detection result is improved. It will be appreciated that the infrared radiation signal to which the active picture element is responsive may also be, for example, a thermal signal caused by infrared radiation from a target object.
Therefore, the detection of the noise signal of the infrared detector can be realized, and a more accurate detection signal can be obtained, so that the accuracy of the detection result of the infrared detector is improved, and the thermal change caused by measurement is not influenced.
It will be appreciated that when the four corners of the infrared detector pixel correspond to the four first columnar structures 3, then the four corners also correspond to the four second columnar structures 4, respectively. When two corners of the infrared detector pixel correspond to the two first columnar structures 3, the two corners also correspond to the two second columnar structures 4 respectively.
From this, this disclosed embodiment is through setting up infrared detector pixel and including absorber plate 1, beam structure 2, first columnar structure 3, second columnar structure 4, third columnar structure 5, and be located the measuring circuitry 6 on the substrate, the thermal signal that is caused by infrared radiation on the absorber plate 1 loops through second columnar structure 4, first columnar structure 3 and transmits to the substrate, before measuring circuitry 6 measures the signal of telecommunication that absorber plate 1 converted, the thermal signal that infrared radiation caused has transmitted to the substrate, the influence of thermal signal to the infrared detector detection result has been filtered, the infrared detector pixel also can acquire more accurate noise signal, thereby improve the accuracy of detection result. In addition, set up second column structure 4 between absorber plate 1 and first column structure 3, second column structure 4 has played the supporting role, has also strengthened the structural stability of infrared detector pixel to can improve infrared detector's structural stability and shock resistance.
Alternatively, as shown in fig. 1, the thermal conductance of the second columnar structure 4 is greater than the thermal conductance of the beam structure 2, and a thermal signal caused by infrared radiation is transmitted to the first columnar structure 3 through the second columnar structure 4.
Specifically, as shown in fig. 1, the thermal conductivity of the second columnar structure 4 may be greater than that of the beam structure 2, at this time, a thermal signal caused by infrared radiation on the absorbing plate 1 is directly led into the substrate in the measurement circuit system 6 through the second columnar structure 4 and the first columnar structure 3, without passing through the beam structure 2 with small thermal conductivity, the thermal signal caused by infrared radiation can be led into the substrate before the measurement circuit system 6 measures an electric signal, so that the influence of the thermal signal caused by infrared radiation on the measurement of the electric signal is filtered, and the infrared detection performance of the infrared detector is improved.
Optionally, as shown in fig. 1, the first columnar structure 3, the second columnar structure 4, and the third columnar structure 5 are solid columnar structures, and the material of the solid columnar structures includes at least one of tungsten, aluminum, or copper.
Illustratively, as shown in fig. 1, the first columnar structure 3, the second columnar structure 4, and the third columnar structure 5 may be, for example, solid columnar structures, that is, solid metal structures are formed at the positions of the first columnar structure 3, solid metal structures are formed at the positions of the second columnar structure 4, and solid metal structures are formed at the positions of the third columnar structure 5. The mechanical stability of the solid columnar structure is good, the supporting connection stability between the first columnar structure 3 and the beam structure 2 and the substrate, between the second columnar structure 4 and the beam structure 2 and the absorption plate 1, and between the third columnar structure 5 and the beam structure 2 and the absorption plate 1 is improved, and the structural stability of the infrared sensor pixel and the infrared detector comprising the infrared detector pixel is further improved.
In addition, the solid columnar structure material comprises at least one of tungsten, aluminum or copper, and the solid columnar structure made of metal material has small resistance, so that signal loss in the electric signal transmission process between the absorption plate 1 and the measurement circuit system 6 is reduced, and the infrared detection performance of the infrared detector is improved. Meanwhile, the solid columnar structure of the metal material has higher heat conduction, and is also beneficial to the rapid conduction of heat signals caused by infrared radiation on the absorption plate 1 to the substrate.
Alternatively, as shown in fig. 1, the second columnar structure 4 and the third columnar structure 5 are located at the same layer.
Illustratively, as shown in fig. 1, the second columnar structure 4 and the third columnar structure 5 may be disposed on the same layer, so that the same process can be used for preparing the second columnar structure 4 and the third columnar structure 5, which reduces the preparation difficulty of the infrared detector pixel and improves the preparation efficiency of the infrared detector pixel.
Fig. 2 is a schematic cross-sectional structure of an infrared detector pixel according to an embodiment of the disclosure. Alternatively, referring to fig. 1 and 2, the beam structure 2 includes a first electrode layer 21 and a passivation layer 22, the absorber plate 1 includes an insulating layer 11, a thermosensitive layer 12 and a second electrode layer 13, the first columnar structure 3 includes a first metal layer 31 and a first solid structure 32, the second columnar structure 4 includes a second metal layer 41 and a second solid structure 42, and the third columnar structure 5 includes a third metal layer 51 and a third solid structure 52;
The first metal layer 31 is located between the first solid structure 32 and the first electrode layer 21, the passivation layer 22 is located on the side of the first electrode layer 21 facing away from the first metal layer 31, the second metal layer 41 is located between the insulating layer 11 and the second solid structure 42, the heat sensitive layer 12 is located on the side of the insulating layer 11 facing away from the measurement circuitry 6, the second electrode layer 13 is located on the side of the heat sensitive layer 12 facing away from or towards the measurement circuitry 6, and the third metal layer 51 is located between the second electrode layer 13 and the third solid structure 52;
the thermal signal caused by the infrared radiation on the thermosensitive layer 12 is transmitted to the substrate in the measuring circuit system 6 through the insulating layer 11, the second metal layer 41, the second solid structure 42, the first metal layer 31 and the first solid structure 32 in sequence;
the thermosensitive layer 12 converts the noise signal into an electrical signal and transmits it to the measurement circuitry 6 through the second electrode layer 13, the third metal layer 51, the third solid structure 52, the first electrode layer 21, the first metal layer 31 and the first solid structure 32.
It should be noted that, for convenience of illustration, a part of the film layers or the structural segments are not uniformly marked with a reference numeral for each segment of the film layers, and the same film layers or the same structures adopt the same filling patterns for easy understanding, i.e. the film layers under the same filling patterns are the same film layers, and the structures under the same filling patterns are the same structures.
Specifically, referring to fig. 1 and 2, the thermosensitive layer 12 is used for converting a noise signal into an electrical signal, the second electrode layer 13 is used for adjusting the resistance of the thermosensitive layer 12, the second electrode layer 13 is electrically connected with the first electrode layer 21 through the third metal layer 51 and the third solid structure 52, that is, the electrical signal converted by the thermosensitive layer 12 is sequentially transferred to the first electrode layer 21, the first metal layer 31 and the first solid structure 32 through the third metal layer 51 and the third solid structure 52, and is transferred to the measurement circuitry 6.
Since part of the insulating layer 11 is located between the thermosensitive layer 12 and the second metal layer 41, the thermosensitive layer 12 will not transmit through the second metal layer 41 and the second solid structure 42 after converting the noise signal into an electrical signal, and the thermal signal caused by the infrared radiation on the thermosensitive layer 12 can be transmitted to the first metal layer 31 through the insulating layer 11, the second metal layer 41 and the second solid structure 42 and transmitted to the substrate through the first solid structure 32 to filter the influence of the thermal signal caused by the infrared radiation.
The first solid structure 32 and the third solid structure 52 are exemplarily shown in fig. 2 to be formed by three tungsten plugs, and the second solid structure 42 is formed by 2 tungsten plugs, which are not limited in the embodiment of the disclosure, and can meet the requirements of heat conduction, electric conduction and support of the infrared detector pixel. It is understood that the first, second and third solid structures 32, 42, 52 may take other shapes, and the disclosed embodiments are not limited in this regard.
Fig. 3 is a schematic cross-sectional structure of another infrared detector pixel according to an embodiment of the disclosure. Optionally, in combination with fig. 1 and 3, the infrared detector pixel further includes: a reflective layer 7, the reflective layer 7 being located on the side of the measurement circuitry 6 facing the beam structure 2; the reflecting layer 7 comprises supporting bases 71 and reflecting plates 72, the reflecting plates 72 are positioned between adjacent supporting bases 71, the first columnar structures 3 are electrically connected with the supporting bases 71, and the supporting bases 71 are electrically connected with the measuring circuit system 6; the absorber plate 1 converts the noise signal into an electrical signal and transmits it to the measuring circuitry 6 via the third columnar structure 5, the beam structure 2, the first columnar structure 3 and the support base 71, and the reflector plate 72 serves to reflect infrared radiation.
The reflection layer 7 exemplarily shown in fig. 3 may for example comprise a support base 71 and a reflection plate 72, the support base 71 being adapted to act as a dielectric for an electrical connection between the first columnar structure 3 and the measurement circuitry 6, enabling a transmission of the electrical signal converted via the noise signal to the measurement circuitry 6, and the support base 71 also being adapted to act as a support, improving the structural stability of the infrared detector picture element. The reflecting plate 72 is used to reflect infrared radiation to the absorbing plate 1, and since the heat signal caused by the infrared radiation has been transferred to the substrate through the second columnar structure 4 and the first columnar structure 3, the reflecting plate 72 does not receive the infrared radiation at this time, and thus the height of the resonant cavity formed between the reflecting layer 7 and the absorbing plate 1 is changed, the condition of resonance of the resonant cavity is destroyed, so that the infrared radiation does not resonate in the resonant cavity, that is, resonant light is not generated in the resonant cavity at this time. In addition, the reflective plate 72 is arranged in the infrared detector pixel, and the structure of the reflective plate can be kept the same as that of a reflective layer in an effective pixel in the infrared detector, so that the preparation process is simplified.
In some embodiments, as shown in fig. 1 and 2, the infrared detector pixel includes only the support base 71, and the reflective plate is etched away, for example, by an etching process, that is, the reflective plate is not provided any more to reflect infrared radiation.
The embodiment of the disclosure further provides an infrared detector, which includes the infrared detector pixel described in the above embodiment, so that the infrared detector provided in the embodiment of the disclosure has the beneficial effects described in the above embodiment, and the embodiments of the disclosure are not repeated herein. The infrared detector may be, for example, an amorphous silicon type, a vanadium oxide type, or a titanium oxide type thermistor type infrared detector, which is not limited in the embodiments of the present disclosure.
Fig. 4 is a schematic perspective view of an infrared detector according to an embodiment of the disclosure. In some embodiments, as shown in FIG. 4, the infrared detector includes an active array of picture elements, and the infrared detector picture elements include mirror image picture elements 110, with mirror image picture elements 110 being located on at least one side of the active array of picture elements.
Specifically, as shown in fig. 4, the infrared detector pixel may be, for example, a mirror image pixel 110, where the mirror image pixel 110 is located on at least one side of an effective pixel array, the effective pixel array includes effective pixels 100 arranged in an array, resistance values of the effective pixels 100 and the mirror image pixel 110 change due to thermal radiation, when the mirror image pixel 110 and the effective pixels 100 receive the same fixed radiation, resistance values of the mirror image pixel 110 and the effective pixels 100 are the same, temperature coefficients of the mirror image pixel 110 and the effective pixels 100 are the same, temperature drift amounts of the mirror image pixel 110 and the effective pixels are the same at the same environmental temperature, and the changes of the mirror image pixel 100 and the mirror image pixel 100 are synchronous. Therefore, the difference between the mirror image pixel 110 and the effective pixel 100 is that the mirror image pixel 110 does not respond to the infrared radiation signal, but the effective pixel 100 responds to the infrared radiation signal, that is, the signal generated by the effective pixel 100 is the superposition of the infrared radiation signal and the noise signal, and the infrared radiation signal of the target object can be obtained after the noise reduction is performed on the signal generated by the effective pixel 100, so that the accuracy of the detection result is improved.
In addition, the mirror image element 110 can eliminate background noise or environmental noise, the mirror image element 110 absorbs thermal signals except infrared radiation, namely noise signals, and the noise signals can be from environmental background noise, resistance thermal noise and substrate thermal noise, so that the influence of the noise signals on the detection of the infrared detector can be avoided.
An active pixel array is exemplarily shown in fig. 4, for example comprising four rows and four columns of active pixels 100, with mirror image pixels 110 located on one side of the active pixel array, i.e. four rows and one column.
Fig. 5 is a schematic perspective view of another infrared detector according to an embodiment of the disclosure. In some embodiments, as shown in FIG. 5, the infrared detector includes an array of active pixels, such as reference pixel 120, with reference pixel 120 located between at least some adjacent two rows or columns of active pixels 100 in the array of active pixels.
Specifically, as shown in fig. 5, the effective pixel array includes effective pixels 100 arranged in an array, and since the reference pixels 120 are located between at least part of two adjacent rows or two adjacent columns of effective pixels 100 in the effective pixel array, row-column noise caused by non-uniformity problems in imaging of the effective pixel array can be eliminated. Reference pixel 120 is illustratively shown in FIG. 5 as being located between two adjacent columns, i.e., two rows and two columns, in the active pixel array.
In some embodiments, the effective pixel array includes effective pixels arranged in an array, an absorbing plate of the effective pixels has a structure identical to that of an absorbing plate of the infrared detector pixel, and a beam structure of the effective pixels has a structure identical to that of a beam structure of the infrared detector pixel.
Specifically, the structure of the absorption plate of the effective pixel is the same as that of the absorption plate of the infrared detector pixel, and the beam structure of the effective pixel is the same as that of the infrared detector pixel, so that when the infrared detector pixel and the effective pixel are subjected to the same radiation, the resistance of the infrared detector pixel and the resistance of the effective pixel are the same, the temperature coefficients of the infrared detector pixel and the effective pixel are the same, the temperature drift amounts of the infrared detector pixel and the effective pixel are the same under the same environmental temperature, and the changes of the infrared detector pixel and the effective pixel are synchronous.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. An infrared detector pixel comprising:
An absorber plate, a beam structure, a first columnar structure, a second columnar structure, a third columnar structure, and measurement circuitry;
The first columnar structure is positioned between the measurement circuit system and the beam structure, the beam structure is electrically connected with the measurement circuit system through the first columnar structure, the second columnar structure is positioned between the absorption plate and the first columnar structure, the second columnar structure is in contact with the first columnar structure, the third columnar structure is positioned between the absorption plate and the beam structure, and the absorption plate is electrically connected with the beam structure through the third columnar structure;
The heat signal caused by infrared radiation on the absorption plate is transmitted to the substrate in the measuring circuit system through the second columnar structure and the first columnar structure in sequence; the absorber plate converts noise signals into electrical signals and transmits the electrical signals to the measurement circuitry through the third columnar structure, the beam structure, and the first columnar structure;
Wherein the beam structure comprises a first electrode layer and a passivation layer, and the absorber plate comprises an insulating layer, a thermosensitive layer and a second electrode layer;
The first columnar structure comprises a first metal layer and a first solid structure, the second columnar structure comprises a second metal layer and a second solid structure, and the third columnar structure comprises a third metal layer and a third solid structure;
The first metal layer is positioned between the first solid structure and the first electrode layer, the passivation layer is positioned at one side of the first electrode layer, which is away from the measurement circuit system, the second metal layer is positioned between the insulating layer and the second solid structure, the heat sensitive layer is positioned at one side of the insulating layer, which is away from the measurement circuit system, and the third metal layer is positioned between the second electrode layer and the third solid structure;
The thermal signal caused by infrared radiation on the thermosensitive layer is transmitted to the substrate in the measurement circuit system through the insulating layer, the second metal layer, the second solid structure, the first metal layer and the first solid structure in sequence;
The thermosensitive layer converts a noise signal into an electrical signal and transmits the electrical signal to the measurement circuitry through the second electrode layer, the third metal layer, the third solid structure, the first electrode layer, the first metal layer, and the first solid structure.
2. The infrared detector pixel of claim 1 wherein the thermal conductance of the second columnar structure is greater than the thermal conductance of the beam structure, thermal signals caused by infrared radiation being transmitted through the second columnar structure to the first columnar structure.
3. The infrared detector pixel of claim 1, wherein the first, second, and third columnar structures are solid columnar structures, and wherein the solid columnar structures comprise at least one of tungsten, aluminum, or copper.
4. The infrared detector pixel of claim 1, wherein the second columnar structure is in the same layer as the third columnar structure.
5. The infrared detector pixel of claim 1, further comprising:
a reflective layer located on a side of the measurement circuitry facing the beam structure;
The reflecting layer comprises a supporting base and a reflecting plate, the reflecting plate is positioned between adjacent supporting bases, the first columnar structure is electrically connected with the supporting base, and the supporting base is electrically connected with the measuring circuit system;
The absorption plate converts noise signals into electrical signals and transmits the electrical signals to the measurement circuitry through the third columnar structure, the beam structure, the first columnar structure and the support base, and the reflection plate is used for reflecting infrared radiation.
6. An infrared detector comprising an infrared detector pixel as claimed in any one of claims 1 to 5.
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