CN115343792A - Metal-dielectric mixed material FP (Fabry-Perot) cavity filter array and preparation method thereof - Google Patents
Metal-dielectric mixed material FP (Fabry-Perot) cavity filter array and preparation method thereof Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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Abstract
The invention relates to a metal-dielectric mixed material FP (Fabry-Perot) cavity filter array structure and a preparation method thereof, wherein the array structure comprises a substrate, a metal-dielectric mixed material and a metal-dielectric mixed material from bottom to topSiO is included 2 The device comprises a substrate, a bottom high-reflection film, a spacing layer and a top high-reflection film; wherein the high-reflection film is Ag/SiO 2 /TiO 2 A metal-dielectric hybrid multilayer film of a film system; the spacer layer is a photoresist spacer layer with different heights and prepared by adopting an electron beam direct writing gray scale photoetching technology and is used for corresponding to spectrums with different wavelengths. Compared with the prior art, the invention adopts the electron beam direct writing gray level photoetching technology to prepare the photoresist spacing layers with different heights, has high direct writing efficiency, and adopts the metal-medium mixed material multilayer film to replace the traditional metal reflecting layer, thereby greatly improving the spectral performance of the FP cavity filter array.
Description
Technical Field
The invention relates to the technical field of spectral imaging, in particular to a metal-medium mixed material FP (Fabry-Perot) cavity filter array and a preparation method thereof.
Background
The spectral imaging technology, especially hyperspectral and hyperspectral imaging, has very wide application in environmental monitoring, biomedical treatment, space remote sensing and even military reconnaissance. Various application scenarios place extremely high technical demands on the sensitivity and resolution of spectrometers.
Because the spectral resolution is inversely proportional to the optical path length, the traditional spectrometer based on the diffraction grating is large in size, and cannot be handheld, portable and miniaturized.
Although the FP (Fabry-Perot) resonant cavity filter structure with the broadband high reflector combined with the image sensor solves the problem of low integration degree, the channel number of the conventional FP resonant cavity band-pass filter array is in direct proportion to the lengths of the spacing layers, namely the number of the spacing layers with different heights, the spectral resolution is in direct proportion to the reflectivity of the upper high-reflection film and the lower high-reflection film, and the preparation process is complex and the preparation cost is high by means of combining deposition/etching technologies.
In addition, the FP cavity band-pass filter array prepared by the photoetching technology usually adopts metal materials as upper and lower high-reflection films. Due to the absorption characteristics of metal in infrared and visible light bands, the spectral resolution of the FP filter array is difficult to improve. Meanwhile, since the reflection bandwidth of the pure dielectric material is narrow, it is difficult to provide more spectral channels in a broadband range. There is therefore currently no good way to balance both spectral resolution and coverage bandwidth.
In view of the above problems, it is desirable to design a novel FP cavity filter array and a manufacturing method thereof, which can improve the spectral performance of the FP cavity filter structure and can be manufactured in a large area and in a large batch at a high repetition rate, so as to promote the practicability of the spectrometer.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a metal-dielectric mixed material FP (Fabry-Perot) cavity filter array with high spectral performance, large coverage bandwidth and simple preparation method and a preparation method thereof.
The purpose of the invention can be realized by the following technical scheme:
according to a first aspect of the invention, a metal-dielectric mixed material FP cavity filter array structure is provided, and the array structure comprises SiO from bottom to top 2 The device comprises a substrate, a bottom high-reflection film, a spacing layer and a top high-reflection film;
wherein the high-reflection film is Ag/SiO 2 /TiO 2 A metal-dielectric hybrid multilayer film of a film system; the spacer layer 3 is a photoresist spacer layer with different thicknesses prepared by adopting an electron beam direct writing gray scale photoetching technology and is used for corresponding to spectrums with different wavelengths.
Preferably, the thickness λ of the photoresist spacer layer is:
wherein d is the square array height, n is the refractive index, and nd is the optical thickness of the spacer layer;
and
the reflection phases of the bottom high-reflection film and the top high-reflection film are respectively set; k is the set interference order.
According to a second aspect of the present invention, there is provided a method for preparing the FP filter array structure, the method comprising the following steps:
step S1, in SiO 2 Preparing Ag/SiO on the substrate by ion beam sputtering deposition technology 2 /TiO 2 A metal-medium mixed material multilayer film of the film system is obtained to obtain a bottom high-reflection film;
s2, spin-coating a layer of photoresist with a set thickness on the surface of the bottom high-reflection film obtained in the step S1 through a spin coater, and then spin-coating a layer of conductive adhesive with a set thickness;
s3, exposing the photoresist in the step S2 by adopting an electron beam direct writing gray scale photoetching technology, and developing to obtain photoresist spacing layers with different heights; the exposure areas correspond to the sensor pixel shapes one by one;
and S4, preparing a top high-reflection film on the photoresist spacing layer with different heights prepared in the step S3 by adopting an ion beam sputtering deposition technology according to the method in the step S1 to obtain the metal-dielectric mixed material FP cavity filter array structure.
Preferably, the step S1 specifically includes: in SiO 2 Preparing a bottom Ag film on a substrate by thermal evaporation, and then depositing SiO by electron beam evaporation 2 And finally preparing TiO by atomic layer deposition 2 And (3) a membrane.
Preferably, the photoresist in step S2 is a PMMA photoresist.
Preferably, the thickness of the photoresist in step S2 is controlled by using the rotation speed of the spin coater.
Preferably, the spin coating parameters of the photoresist in step S2 are set as follows: the rotating speed is 2000-3000 r/min; the thickness is 500-650 nm; the baking is carried out by using a hot plate at the temperature of 178-182 ℃ for 8-12 minutes to solidify.
Preferably, the spin coating parameters of the conductive adhesive in step S2 are set as follows: the rotating speed is 4000-5000r/min, and the thickness is 30-50nm; the baking process is carried out by hot plate at 87-93 deg.C for 1.8-2.2 min.
Preferably, in the step S3, the photoresist in the step S2 is exposed by using an electron beam direct writing grayscale lithography, and the photoresist spacers with different heights are obtained after development, specifically:
setting exposure parameters: the beam spot current is 9.8-10.2 nA, the beam spot size is 15-25 nm, and the exposure dose is 150 mu C/cm 2-250 mu C/cm2; the thickness of the photoresist spacer layer is controlled by exposure dose and development parameters;
setting development parameters: after exposure, the conducting resin is washed away by deionized water for 0.5 to 1 minute; and then developing, wherein the developing solution is a mixed solution of isopropanol and deionized water, and the mixing ratio is 1:1, the developing temperature is 22.8-23.2 ℃, and the developing time is 4-5 minutes; rinsing in deionized water for 0.5-1 min.
Compared with the prior art, the invention has the following advantages:
1) The electron beam gray level direct writing efficiency is high: by adopting the electron beam direct writing gray level photoetching process, the designed multi-channel FP cavity filter array can be obtained at one time after development by strictly controlling the exposure dose and optimizing the development parameters, and single exposure is needed no matter how many channels are, so that compared with the traditional methods of combined deposition, combined etching and alignment, the invention can realize the preparation of a large-batch high-repeatability FP cavity filter array structure, greatly reduce the preparation difficulty of the spectral device, reduce the preparation cost and improve the prepared yield;
2) The spectral performance of the FP cavity filter array is greatly improved: aiming at the defect that the traditional FP filter array mostly adopts metal as a reflecting layer and has large spectral loss, the invention utilizes the multilayer film of the metal-medium mixed material to replace the traditional metal reflecting layer, thereby reducing the absorption of the spectrum, improving the reflectivity and the spectral resolution and effectively improving the spectral performance of the filter;
3) After the photoresist is coated in a spinning mode, a layer of conductive adhesive is coated in a spinning mode, and the charge accumulation effect in electron beam exposure is weakened.
Drawings
FIG. 1 is a schematic structural diagram of a metal-dielectric mixed material FP cavity filter array of the present invention;
FIG. 2 is a detailed structural schematic diagram of a metal-dielectric mixed material FP cavity filter array of the present invention;
FIG. 3 is a spectrum curve of the FP cavity filter structure at different wavelengths;
reference numerals: 1-SiO 2 The film comprises a substrate, 2-a bottom high-reflection film, 3-a spacing layer and 4-a top high-reflection film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.
Examples
According to the FP cavity filtering principle, a filtering array structure with the transmittance of more than 75% and the spectral resolution of less than 10nm is designed to work in the 400-700 nm wave band range. As shown in fig. 1 and fig. 2, this embodiment provides a metal-dielectric mixed material FP cavity filter array based on electron beam direct writing gray scale lithography, where the array structure includes SiO from bottom to top 2 The film comprises a substrate 1, a bottom high-reflection film 2, a spacing layer 3 and a top high-reflection film 4;
the high-reflection film is Ag/SiO 2 /TiO 2 The center wavelength (the position of the wavelength of a narrow-band filter transmission response curve) of the metal-dielectric mixed material multilayer film of the film system is 550nm;
the spacer layer 3 is a photoresist spacer layer with different heights prepared by adopting an electron beam direct writing gray scale photoetching technology and is used for corresponding to spectrums with different wavelengths. The spacing layer is of a three-dimensional structure, the size is 5 μm by 5 μm, and the thickness λ is:
wherein d is the square array height, n is the refractive index, and nd is the optical thickness of the spacer layer;
and
the reflection phases of the bottom high-reflection film and the top high-reflection film are respectively set; k is the set interference order.
Next, an embodiment of the method of the present invention is given, in which a method for manufacturing the FP cavity filter array structure is provided, the method includes the following steps:
step S1, in SiO 2 Preparing Ag/SiO on the substrate 1 by adopting ion beam sputtering deposition technology 2 /TiO 2 The method is characterized in that a metal-medium mixed material multilayer film of a film system is used for obtaining a bottom high-reflection film 2, and the method specifically comprises the following steps:
in SiO 2 Preparing a bottom Ag film on a substrate by thermal evaporation, and then depositing SiO by electron beam evaporation 2 And finally preparing TiO by atomic layer deposition 2 A film;
setting the technological parameters of thermal evaporation: vacuum degree of 1X 10 -4 ～1.2×10 -4 pa Ag deposition rate of
Setting the technological parameters of electron beam evaporation deposition: vacuum degree of 1X 10 -4 ～1.2×10 -4 pa, siO2 deposition rate of
Setting the process parameters of the atomic layer deposition: the temperature is 200 ℃, the gas flow is 90sccm, and the deposition rate is 0.04-0.05nm/cycle.
S2, spin-coating a layer of photoresist with a set thickness on the surface of the bottom high-reflection film obtained in the step S1 through a spin coater, and then spin-coating a layer of conductive adhesive with a set thickness; the photoresist in the embodiment is PMMA photoresist; the thickness of the photoresist is controlled by adopting the rotating speed of the photoresist homogenizer;
the photoresist spin coating parameters are set as follows: the rotating speed is 2000-3000 r/min; the thickness is 500-650 nm; baking with a hot plate at 178-182 ℃ for 8-12 minutes to solidify;
conducting resin spin coating parameter setting: the rotating speed is 4000-5000r/min, and the thickness is 30-50nm; the baking is carried out by using a hot plate at the temperature of 87-93 ℃ for 1.8-2.2 minutes.
Step S3, exposing the photoresist in step S2 by using an electron beam direct writing grayscale lithography, and developing to obtain photoresist spacers of different heights, where the exposure regions correspond to the pixel shapes of sensors (the sensors in this embodiment are CCD charge coupled devices or CMOS complementary metal oxide semiconductors) one to one, specifically:
setting exposure parameters: the current of the beam spot is 9.8-10.2 nA, the size of the beam spot is 15-25 nm, and the exposure dose is 150 mu C/cm < 2 > -250 mu C/cm < 2 >; the height of the photoresist spacer layer is controlled by exposure dose and development parameters;
setting development parameters: after exposure, washing off the conductive adhesive by using deionized water for 0.5 to 1 minute; and then developing, wherein the developing solution is a mixed solution of isopropanol IPA and deionized water, and the mixing ratio is 1:1, the developing temperature is 22.8-23.2 ℃, and the developing time is 4-5 minutes; rinsing in deionized water for 0.5-1 min;
and S4, preparing a top high-reflection film on the photoresist spacing layer with different heights prepared in the step S3 by adopting an ion beam sputtering deposition technology according to the method in the step S1 to obtain the metal-dielectric mixed material FP cavity filter array structure.
Fig. 3 is a spectrum curve of the FP cavity filter structure under different wavelengths, and it can be known from the figure that the present invention uses the metal-medium mixed material multilayer film to replace the conventional metal reflective layer, thereby reducing the absorption of the spectrum, improving the reflectivity and the spectral resolution, and effectively improving the spectral performance of the filter device.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. Metal-medium mixingThe FP cavity filter array structure is characterized in that the array structure comprises SiO from bottom to top 2 The light-emitting diode comprises a substrate (1), a bottom high-reflection film (2), a spacing layer (3) and a top high-reflection film (4);
wherein the high-reflection film is Ag/SiO 2 /TiO 2 A metal-dielectric hybrid multilayer film of a film system; the spacing layer (3) is a photoresist spacing layer with different thicknesses and prepared by adopting an electron beam direct writing gray scale photoetching technology and is used for corresponding to spectrums with different wavelengths.
2. The metal-dielectric mixed material FP cavity filter array structure of claim 1, wherein the thickness λ of the photoresist spacer layer is:
wherein d is the square array height, n is the refractive index, and nd is the optical thickness of the spacer layer;
and
the reflection phases of the bottom high-reflection film and the top high-reflection film are respectively set; k is the set interference order.
3. A preparation method for the metal-dielectric mixed material FP cavity filter array structure of claim 1, wherein the method comprises the following steps:
step S1, in SiO 2 Preparing Ag/SiO on the substrate by ion beam sputtering deposition technology 2 /TiO 2 A metal-medium mixed material multilayer film of the film system is obtained to obtain a bottom high-reflection film;
s2, spin-coating a layer of photoresist with a set thickness on the surface of the bottom high-reflection film obtained in the step S1 through a spin coater, and then spin-coating a layer of conductive adhesive with a set thickness;
s3, exposing the photoresist in the step S2 by adopting an electron beam direct writing gray scale photoetching technology, and developing to obtain photoresist spacing layers with different heights; the exposure areas correspond to the sensor pixel shapes one by one;
and S4, preparing a top high-reflection film on the photoresist spacing layers with different heights prepared in the step S3 by adopting an ion beam sputtering deposition technology according to the method in the step S1 to obtain a metal-medium mixed material FP cavity filter array structure.
4. The method according to claim 3, wherein the step S1 is specifically: in SiO 2 Preparing a bottom Ag film on a substrate by thermal evaporation, and then depositing SiO by electron beam evaporation 2 And finally preparing TiO by atomic layer deposition 2 And (3) a membrane.
5. The method of claim 3, wherein the photoresist in step S2 is PMMA photoresist.
6. The method according to claim 3, wherein the thickness of the photoresist in step S2 is controlled by using the rotation speed of the spin coater.
7. The method according to claim 3, wherein the spin coating parameters of the photoresist in step S2 are set as follows: the rotating speed is 2000-3000 r/min, and the thickness is 500-650 nm; the baking is carried out by using a hot plate at the temperature of 178-182 ℃ for 8-12 minutes to solidify.
8. The method according to claim 3, wherein the spin coating parameters of the conductive paste in step S2 are set as follows: the rotating speed is 4000-5000r/min, and the thickness is 30-50nm; the baking is carried out by using a hot plate at the temperature of 87-93 ℃ for 1.8-2.2 minutes.
9. The method according to claim 3, wherein the step S3 of exposing the photoresist in the step S2 by using an electron beam direct writing gray scale lithography technique, and developing to obtain photoresist spacers of different heights, specifically:
setting exposure parameters: the beam spot current is 9.8-10.2 nA, the beam spot size is 15-25 nm, and the exposure dose is 150 mu C/cm 2-250 mu C/cm2; the thickness of the photoresist spacer layer is controlled by exposure dose and development parameters;
setting development parameters: after exposure, washing off the conductive adhesive by using deionized water for 0.5 to 1 minute; and then developing, wherein the developing solution is a mixed solution of isopropanol and deionized water, and the mixing ratio is 1:1, the developing temperature is 22.8-23.2 ℃, and the developing time is 4-5 minutes; rinsing in deionized water for 0.5-1 minute.
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| CN115793414A (en) * | 2022-12-26 | 2023-03-14 | 有研国晶辉新材料有限公司 | Preparation method of high-aspect-ratio microstructure with adjustable height ratio |
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| CN115793414A (en) * | 2022-12-26 | 2023-03-14 | 有研国晶辉新材料有限公司 | Preparation method of high-aspect-ratio microstructure with adjustable height ratio |
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