CN111256673A - Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method - Google Patents
Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method Download PDFInfo
- Publication number
- CN111256673A CN111256673A CN202010060372.9A CN202010060372A CN111256673A CN 111256673 A CN111256673 A CN 111256673A CN 202010060372 A CN202010060372 A CN 202010060372A CN 111256673 A CN111256673 A CN 111256673A
- Authority
- CN
- China
- Prior art keywords
- layer
- tuning fork
- quartz tuning
- island
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5621—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks the devices involving a micromechanical structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5628—Manufacturing; Trimming; Mounting; Housings
Abstract
The invention discloses a connection structure of a quartz tuning fork and a base, which comprises an island, a boss and a plurality of metal film layers arranged between the island and the boss for connecting the island and the boss, wherein the island is arranged at the center of the quartz tuning fork, and the boss is arranged on the surface of the base. The invention also provides a connecting method of the quartz tuning fork and base connecting structure and application of the quartz tuning fork and base connecting structure in a quartz tuning fork gyroscope. The quartz tuning fork and the base are connected by adopting a micro-assembly process, so that the inevitable temperature mismatching and gas release of the quartz tuning fork and the base based on an epoxy resin adhesive bonding process are fundamentally solved based on the properties of materials, the full-temperature performance and the temperature stability of the quartz gyroscope can be effectively improved, the strength and the reliability of a connection structure are ensured, meanwhile, the MEMS process is compatible with the traditional automatic bonding equipment, and the micron-scale micro-assembly precision is ensured by adopting specific micro-assembly process parameters.
Description
Technical Field
The invention relates to the field of quartz tuning fork gyroscope processing, in particular to a connecting structure of a quartz tuning fork and a base, a connecting method and application thereof.
Background
The micromechanical gyroscope is a core component of modern inertial navigation and control technology, and is widely applied to aerospace, weaponry, industrial control and consumer electronics. The quartz tuning fork gyroscope has high detection precision and is widely applied to the field of high-precision application. The quartz tuning fork gyroscope processing can be divided into three stages, wherein the first stage is the processing of a quartz tuning fork, namely, the quartz tuning fork structure is precisely processed by an MEMS (micro-electromechanical systems) process; the second stage is the micro-assembly of the quartz tuning fork gyroscope core, namely the micro-assembly of the quartz tuning fork and the base is realized through epoxy resin insulating adhesive glue and the like; and the third stage is the encapsulation of the quartz tuning fork gyroscope core, namely the reliable encapsulation of a specific internal atmosphere is realized through resistance welding or laser seal welding and the like.
The traditional micro-assembly technology generally adopts epoxy resin insulating adhesive glue and the like to realize the micro-assembly of the quartz tuning fork and the base, and good thermal matching can be realized because the quartz and the base materials (such as kovar alloy and the like) have close thermal expansion coefficients, but the thermal expansion coefficient is not matched with the base and the quartz crystal after the epoxy resin adhesive glue is cured, stress is generated when the temperature changes, the quartz tuning fork is used as a sensitive part of the quartz gyroscope, the weak stress directly hardens the parameter index, and the temperature-related stress change influences the full-temperature performance of the quartz gyroscope. Meanwhile, as the organic epoxy resin adhesive releases gas along with the passage of time, the packaging atmosphere is influenced, the internal pressure and the damping change are caused, further the Q value, the scale factor and other key indexes of the quartz gyroscope are changed, and the long-term stability of the quartz gyroscope core is influenced by the internal atmosphere change related to the time.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects that the quartz and the base material in the prior art are connected by using epoxy resin type insulating adhesive, thermal stress is generated due to the mismatch between the thermal expansion coefficient of the epoxy resin and the quartz and the base material, and gas is released over time, so as to provide a quartz tuning fork and base connecting structure and a quartz tuning fork and base connecting method.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a connection structure of a quartz tuning fork and a base, which comprises an island, a boss and a metal connection layer arranged between the island and the boss for connecting the island and the boss, wherein the island is arranged at the center of the quartz tuning fork, and the boss is arranged on the surface of the base.
The metal connecting layer is formed by bonding a plurality of metal film layers, and the plurality of metal film layers sequentially comprise a Cr layer, a first Au layer, a Sn layer and a second Au layer which are stacked and arranged along the direction of the island close to the boss.
Further, the area of the multilayer metal film layer is larger than the intersection area of the island and the boss.
Further, the thickness of the multilayer metal film layer is 9.5-10.5 μm; preferably, the thickness of the Cr layer is 19-21nm, the thickness of the first Au layer is 5700-6300nm, the thickness of the Sn layer is 3800-4200nm, the thickness of the second Au layer is 9.5-10.5nm, and the multilayer metal film layer is not connected with other Au electrodes.
The invention also provides application of the quartz tuning fork gyroscope with the quartz tuning fork and base connecting structure.
And provides a quartz tuning fork gyroscope, which comprises the quartz tuning fork and a base connecting structure.
The invention also provides a method for connecting the quartz tuning fork and the base, which comprises the following steps:
forming a plurality of metal film layers on the island at the center of the quartz tuning fork;
aligning the island of the quartz tuning fork with the boss of the base, then carrying out micro-assembly, and connecting the quartz tuning fork and the base through a plurality of metal film layers.
Further, the micro-assembly comprises the following steps:
aligning the island of the quartz tuning fork with the boss of the base, placing the island and the boss into bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa and repeating at least 1 time;
heating from (30 + -10) deg.C to (220 + -10) deg.C for 1-5 min;
keeping at 220 + -10 deg.C for 1-2 min;
heating from (220 + -10) deg.C to (310 + -10) deg.C for 1-10 min;
keeping at 310 + -10 deg.C for 5-30 min;
cooling from (310 + -10) deg.C to (50 + -10) deg.C for 5-30 min;
heating from 50 + -10 deg.C to 200 + -10 deg.C for 1-5 min;
keeping at 200 + -10 deg.C for 1-5 min;
cooling from (200 + -10) deg.C to (30 + -10) deg.C for 1-5min to complete micro-assembly.
Forming a plurality of metal film layers on the island at the center of the quartz tuning fork, and comprising the following steps:
s1: sequentially depositing a Cr layer and a first Au layer on an island in the center of a quartz tuning fork;
s2: patterning a structure formed by the Cr layer and the first Au layer;
s3: preparing a Sn layer and a second Au layer on the structure obtained in the step S2 to obtain a multilayer metal film layer;
preferably, in step S1, the deposition is magnetron sputtering deposition;
in step S2, the patterning is to precisely define the structure obtained by the photolithography process S1, and then to form a target pattern by a wet etching process;
step S3 is specifically to precisely define the structure obtained in step S2 by using a photolithography process, then deposit a Sn layer and a second Au layer by using a thermal evaporation method, and finally obtain a multilayer metal film layer by using a photoresist stripping process. The Cr layer and the first Au layer as well as the Sn layer and the second Au layer are prepared twice when the multilayer metal film layer is formed, so that the Cr layer and the first Au layer are prepared in advance and can be compatible with the existing MEMS process, the influence of more active Sn is avoided, the process feasibility is improved, and the process difficulty in the whole preparation process is reduced.
Further, during the micro-assembly, temperature rise and temperature maintenance, the vacuum degree is maintained to be less than 8 multiplied by 104Pa, ensuring good heat conduction uniformity and micro-assembly quality by controlling specific nitrogen pressure in the cavity in the heating and heat preservation processes;
when the plurality of metal film layers are formed on the island at the center of the quartz tuning fork, the vacuum degree is kept to be not more than 5 multiplied by 10 when the Cr layer and the first Au layer are deposited and the Sn layer and the second Au layer are deposited-3Pa to ensureFilm forming quality.
The technical scheme of the invention has the following advantages:
(1) the quartz tuning fork and the base are connected by adopting a micro-assembly process, so that the inevitable temperature mismatching and gas release of the quartz tuning fork and the base based on an epoxy resin adhesive bonding process are fundamentally solved based on the properties of materials, and the full-temperature performance and the temperature stability of the quartz gyroscope can be effectively improved.
(2) The invention sets the area of the multilayer metal film layer slightly larger than the bonding area, ensures the bonding edge appearance after bonding, avoids bonding defects, and further ensures the strength and reliability of the connecting structure.
(3) In order to ensure good micro-assembly precision of the quartz tuning fork and the base, the thickness parameter of the multilayer metal film layer structure, the process flow and the process parameter of the micro-assembly process are designed, so that the stable alloying process of the metal multilayer film layer can be ensured, the displacement of the micro-assembly tuning fork can be effectively reduced, the stress is reduced, the acceptable pre-stress of the micro-assembly can be ensured, and the micro-assembly precision of micron grade can be realized.
(4) According to the invention, an MEMS (micro-electromechanical systems) process is adopted when the multilayer metal film layer is prepared, the pattern appearance and position are determined through a photoetching process, the preparation precision can reach submicron level, the multilayer metal film layer and the quartz tuning fork structure are integrated, and the traditional automatic bonding equipment can be compatible.
(5) The invention adopts MEMS technology when preparing the multilayer metal film layer, the thickness precision of each layer material of the multilayer metal film layer reaches the nanometer level, the thickness and the total thickness of each film layer of the multilayer metal film layer are accurately controlled, when the thickness of the multilayer metal film layer is matched with the bonding area, the bonding material and the bonding morphology, the displacement deviation caused by the core deflection caused by the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a quartz tuning fork according to embodiments 1-5 of the present invention;
FIG. 2 is a side view of an unconnected quartz tuning fork and base in embodiments 1-5 of the present invention;
FIG. 3 is a side view of the quartz tuning fork and the base after being connected in embodiments 1-5 of the present invention;
FIG. 4 is a partially enlarged view of the connection structure of the quartz tuning fork and the base in FIG. 3;
FIG. 5 is a top view of the quartz tuning fork and the base of FIG. 3 after being connected;
FIG. 6 is a partially enlarged view of the coupling structure of the quartz tuning fork and the base in FIG. 5;
fig. 7 is a schematic structural diagram of a multi-layer metal film in examples 1 to 5 of the present invention.
Reference numerals:
1-quartz tuning fork; 11-islanding; 2-a base; 21-a boss; 3-a plurality of metal film layers; a 31-Cr layer; 32-a first Au layer; 33-Sn layer; 34-a second Au layer; 4-a connection structure of the quartz tuning fork and the base; 5-area of intersection of island and boss.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The magnetron sputtering process, the photolithography process, the wet etching process, the thermal evaporation coating process, and the photoresist stripping process used in examples 1 to 5 are all conventional processes, and the process parameters thereof may be changed according to actual conditions.
Example 1
The embodiment provides a method for connecting a quartz tuning fork and a base, as shown in fig. 1 to 6, which specifically includes the following steps:
(1) depositing a Cr layer 31 with the thickness of 20nm and a first Au layer 32 with the thickness of 6000nm on the central island 11 of the quartz tuning fork 1 in sequence by magnetron sputtering;
(2) accurately defining the structure obtained in the step (1) by adopting a photoetching process, so that a region corresponding to a target structure is covered by photoresist;
(3) a wet etching process is adopted for the Cr layer 31 and the first Au layer 32, and photoresist is removed after etching is completed to form a target pattern;
(4) accurately defining the structure obtained in the step (3) by adopting a photoetching process, so that the region corresponding to the target structure is not covered by the photoresist;
(5) depositing a 4000nm Sn layer 33 and a 10nm second Au layer 34 by thermal evaporation, and then adopting a photoresist stripping process to obtain the multilayer metal film layer 3 shown in FIG. 7, wherein the multilayer metal film layer 3 is not connected with other Au electrodes. The intersection area 5 of the island and the boss shown in fig. 6 is smaller than the area of the multilayer metal film layer 3, so that the bonding edge appearance after bonding is ensured, the bonding defect is avoided, and the strength and the reliability of the connecting structure are ensured. Meanwhile, the thickness and the total thickness of each film layer of the multilayer metal film layer 3 are controlled in the steps (1) to (5), so that the thickness and the bonding area of the multilayer metal film layer are enabled to be more, when the bonding material and the bonding morphology are matched, the displacement deviation caused by the core deviation due to the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized. When the magnetron sputtering and the thermal evaporation are carried out in the step (1) and the step (5), the vacuum degree is kept to be not more than 5 multiplied by 10-3Pa, to ensure the film forming quality;
(6) aligning the island 11 of the quartz tuning fork 1 with the boss 21 of the base 2, placing the quartz tuning fork in bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa, and repeating for 1 time;
heating from 30 ℃ to 220 ℃ for 1 min;
maintaining at 220 deg.C for 2 min;
heating from 220 ℃ to 310 ℃ for 10 min;
maintaining at 310 deg.C for 5 min;
cooling from 310 deg.C to 50 deg.C for 30 min;
heating from 50 deg.C to 200 deg.C for 5 min;
maintaining at 200 deg.C for 1 min;
and (3) cooling from 200 ℃ to 30 ℃ for 5min, wherein the temperature change process in the step (4) can reduce stress, ensure that the pre-stress of the micro-assembly is acceptable, and finish the micro-assembly.
Wherein the vacuum degree is maintained at less than 8 × 10 at the time of temperature rise and temperature maintenance4Pa, and good heat conduction uniformity and micro-assembly quality can be ensured by controlling the specific nitrogen pressure maintained in the cavity in the heating and heat preservation processes.
Example 2
The embodiment provides a method for connecting a quartz tuning fork and a base, as shown in fig. 1 to 6, which specifically includes the following steps:
(1) depositing a Cr layer 31 with the thickness of 19nm and a first Au layer 32 with the thickness of 6300nm on the central island 11 of the quartz tuning fork 1 in sequence by magnetron sputtering;
(2) accurately defining the structure obtained in the step (1) by adopting a photoetching process, so that a region corresponding to a target structure is covered by photoresist;
(3) a wet etching process is adopted for the Cr layer 31 and the first Au layer 32, and photoresist is removed after etching is completed to form a target pattern;
(4) accurately defining the structure obtained in the step (3) by adopting a photoetching process, so that the region corresponding to the target structure is not covered by the photoresist;
(5) a 4200nm Sn layer 33 and a 9.5nm second Au layer 34 are deposited by thermal evaporation, and then a photoresist lift-off process is used to obtain the multi-layered metal film layer 3 shown in fig. 7, which multi-layered metal film layer 3 is not connected to other Au electrodes. The intersection area 5 of the island and the boss shown in fig. 6 is smaller than the area of the multilayer metal film layer 3, so that the bonding edge appearance after bonding is ensured, the bonding defect is avoided, and the strength and the reliability of the connecting structure are ensured. Meanwhile, the thickness and the total thickness of each film layer of the multilayer metal film layer 3 are controlled in the steps (1) to (5), so that the thickness and the bonding area of the multilayer metal film layer are enabled to be more, when the bonding material and the bonding morphology are matched, the displacement deviation caused by the core deviation due to the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized. When the magnetron sputtering and the thermal evaporation are carried out in the step (1) and the step (5), the vacuum degree is kept to be not more than 5 multiplied by 10-3Pa, to ensure the film forming quality;
(6) aligning the island 11 of the quartz tuning fork 1 with the boss 21 of the base 2, placing the quartz tuning fork in bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa, and repeating for 2 times;
heating from 35 deg.C to 230 deg.C for 5 min;
maintaining at 230 deg.C for 1 min;
heating from 230 ℃ to 300 ℃ for 3 min;
maintaining at 300 deg.C for 30 min;
cooling from 300 deg.C to 60 deg.C for 5 min;
heating from 60 deg.C to 210 deg.C for 1 min;
maintaining at 210 deg.C for 5 min;
and (3) cooling from 210 ℃ to 35 ℃, wherein the cooling time is 1min, and the temperature change process in the step (4) can reduce stress, ensure that the pre-stress of the micro-assembly is acceptable, and finish the micro-assembly.
Wherein the vacuum degree is maintained at less than 8 × 10 at the time of temperature rise and temperature maintenance4Pa, and good heat conduction uniformity and micro-assembly quality can be ensured by controlling the specific nitrogen pressure maintained in the cavity in the heating and heat preservation processes.
Example 3
The embodiment provides a method for connecting a quartz tuning fork and a base, as shown in fig. 1 to 6, which specifically includes the following steps:
(1) depositing a 21nm Cr layer 31 and a 5700nm first Au layer 32 on the central island 11 of the quartz tuning fork 1 in sequence by magnetron sputtering;
(2) accurately defining the structure obtained in the step (1) by adopting a photoetching process, so that a region corresponding to a target structure is covered by photoresist;
(3) a wet etching process is adopted for the Cr layer 31 and the first Au layer 32, and photoresist is removed after etching is completed to form a target pattern;
(4) accurately defining the structure obtained in the step (3) by adopting a photoetching process, so that the region corresponding to the target structure is not covered by the photoresist;
(5) a 3800nm Sn layer 33 and a 10.5nm second Au layer 34 are deposited by thermal evaporation, and then a photoresist stripping process is used to obtain the multilayer metal film layer 3 shown in fig. 7, wherein the multilayer metal film layer 3 is not connected with other Au electrodes. The intersection area 5 of the island and the boss shown in fig. 6 is smaller than the area of the multilayer metal film layer 3, so that the bonding edge appearance after bonding is ensured, the bonding defect is avoided, and the connection structure is ensuredStrength and reliability. Meanwhile, the thickness and the total thickness of each film layer of the multilayer metal film layer 3 are controlled in the steps (1) to (5), so that the thickness and the bonding area of the multilayer metal film layer are enabled to be more, when the bonding material and the bonding morphology are matched, the displacement deviation caused by the core deviation due to the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized. When the magnetron sputtering and the thermal evaporation are carried out in the step (1) and the step (5), the vacuum degree is kept to be not more than 5 multiplied by 10-3Pa, to ensure the film forming quality;
(6) aligning the island 11 of the quartz tuning fork 1 with the boss 21 of the base 2, placing the quartz tuning fork in bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa, and repeating for 1 time;
heating from 20 deg.C to 210 deg.C for 2 min;
maintaining at 210 deg.C for 1 min;
heating from 210 ℃ to 320 ℃ for 1 min;
maintaining at 320 deg.C for 10 min;
cooling from 320 deg.C to 40 deg.C for 30 min;
heating from 40 deg.C to 190 deg.C for 3 min;
maintaining at 190 deg.C for 2 min;
and (3) cooling from 190 ℃ to 20 ℃ for 4min, wherein the temperature change process in the step (4) can reduce stress, ensure that the pre-stress of the micro-assembly is acceptable, and finish the micro-assembly.
Wherein the vacuum degree is maintained at less than 8 × 10 at the time of temperature rise and temperature maintenance4Pa, and good heat conduction uniformity and micro-assembly quality can be ensured by controlling the specific nitrogen pressure maintained in the cavity in the heating and heat preservation processes.
Example 4
The embodiment provides a method for connecting a quartz tuning fork and a base, as shown in fig. 1 to 6, which specifically includes the following steps:
(1) depositing a Cr layer 31 with the thickness of 20nm and a first Au layer 32 with the thickness of 6000nm on the central island 11 of the quartz tuning fork 1 in sequence by magnetron sputtering;
(2) accurately defining the structure obtained in the step (1) by adopting a photoetching process, so that a region corresponding to a target structure is covered by photoresist;
(3) a wet etching process is adopted for the Cr layer 31 and the first Au layer 32, and photoresist is removed after etching is completed to form a target pattern;
(4) accurately defining the structure obtained in the step (3) by adopting a photoetching process, so that the region corresponding to the target structure is not covered by the photoresist;
(5) depositing a 4000nm Sn layer 33 and a 10nm second Au layer 34 by thermal evaporation, and then adopting a photoresist stripping process to obtain the multilayer metal film layer 3 shown in FIG. 7, wherein the multilayer metal film layer 3 is not connected with other Au electrodes. The intersection area 5 of the island and the boss shown in fig. 6 is smaller than the area of the multilayer metal film layer 3, so that the bonding edge appearance after bonding is ensured, the bonding defect is avoided, and the strength and the reliability of the connecting structure are ensured. Meanwhile, the thickness and the total thickness of each film layer of the multilayer metal film layer 3 are controlled in the steps (1) to (5), so that the thickness and the bonding area of the multilayer metal film layer are enabled to be more, when the bonding material and the bonding morphology are matched, the displacement deviation caused by the core deviation due to the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized. When the magnetron sputtering and the thermal evaporation are carried out in the step (1) and the step (5), the vacuum degree is kept to be not more than 5 multiplied by 10-3Pa, to ensure the film forming quality;
(6) aligning the island 11 of the quartz tuning fork 1 with the boss 21 of the base 2, placing the quartz tuning fork in bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa, and repeating for 2 times;
heating from 40 deg.C to 220 deg.C for 3 min;
maintaining at 220 deg.C for 2 min;
heating from 220 ℃ to 310 ℃ for 10 min;
maintaining at 310 deg.C for 20 min;
cooling from 310 deg.C to 40 deg.C for 20 min;
heating from 40 deg.C to 200 deg.C for 3 min;
maintaining at 200 deg.C for 2 min;
and (3) cooling from 200 ℃ to 40 ℃ for 5min, wherein the temperature change process in the step (4) can reduce stress, ensure that the pre-stress of the micro-assembly is acceptable, and finish the micro-assembly.
Wherein the vacuum degree is maintained at less than 8 × 10 at the time of temperature rise and temperature maintenance4Pa, and good heat conduction uniformity and micro-assembly quality can be ensured by controlling the specific nitrogen pressure maintained in the cavity in the heating and heat preservation processes.
Example 5
The embodiment provides a method for connecting a quartz tuning fork and a base, as shown in fig. 1 to 6, which specifically includes the following steps:
(1) depositing a Cr layer 31 with the thickness of 20nm and a first Au layer 32 with the thickness of 6000nm on the central island 11 of the quartz tuning fork 1 in sequence by magnetron sputtering;
(2) accurately defining the structure obtained in the step (1) by adopting a photoetching process, so that a region corresponding to a target structure is covered by photoresist;
(3) a wet etching process is adopted for the Cr layer 31 and the first Au layer 32, and photoresist is removed after etching is completed to form a target pattern;
(4) accurately defining the structure obtained in the step (3) by adopting a photoetching process, so that the region corresponding to the target structure is not covered by the photoresist;
(5) depositing a 4000nm Sn layer 33 and a 10nm second Au layer 34 by thermal evaporation, and then adopting a photoresist stripping process to obtain the multilayer metal film layer 3 shown in FIG. 7, wherein the multilayer metal film layer 3 is not connected with other Au electrodes. The intersection area 5 of the island and the boss shown in fig. 6 is smaller than the area of the multilayer metal film layer 3, so that the bonding edge appearance after bonding is ensured, the bonding defect is avoided, and the strength and the reliability of the connecting structure are ensured. Meanwhile, the thickness and the total thickness of each film layer of the multilayer metal film layer 3 are controlled in the steps (1) to (5), so that the thickness and the bonding area of the multilayer metal film layer are enabled to be more, when the bonding material and the bonding morphology are matched, the displacement deviation caused by the core deviation due to the molten state flow in the alloying process can be effectively avoided, and the micron-scale micro-assembly precision is realized. When the magnetron sputtering and the thermal evaporation are carried out in the step (1) and the step (5), the vacuum degree is kept to be not more than 5 multiplied by 10-3Pa, to ensure the film forming quality;
(6) aligning the island 11 of the quartz tuning fork 1 with the boss 21 of the base 2, placing the quartz tuning fork in bonding equipment, and vacuumizing to be not more than 5 multiplied by 10-3After Pa, fill N2To not more than 8X 104Pa, and repeating for 2 times;
heating from 25 deg.C to 225 deg.C for 3 min;
maintaining at 225 deg.C for 1 min;
heating from 225 deg.C to 310 deg.C for 6 min;
maintaining at 310 deg.C for 15 min;
cooling from 310 deg.C to 40 deg.C for 20 min;
heating from 40 deg.C to 225 deg.C for 5 min;
maintaining at 225 deg.C for 2 min;
and (3) cooling from 225 ℃ to 25 ℃ for 3min, wherein the temperature change process in the step (4) can reduce stress, ensure that the pre-stress of the micro-assembly is acceptable, and finish the micro-assembly.
Wherein the vacuum degree is maintained at less than 8 × 10 at the time of temperature rise and temperature maintenance4Pa, and good heat conduction uniformity and micro-assembly quality can be ensured by controlling the specific nitrogen pressure maintained in the cavity in the heating and heat preservation processes.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. The utility model provides a connection structure of quartz tuning fork and base, its characterized in that includes island, boss and sets up the metal connecting layer that is used for both interconnect between the two, the island sets up in quartz tuning fork center, the boss sets up in the base surface.
2. The connection structure according to claim 1, wherein the metal connection layer is formed by bonding a plurality of metal film layers, and the plurality of metal film layers sequentially comprise a Cr layer, a first Au layer, a Sn layer and a second Au layer which are stacked in a direction of the island close to the boss.
3. The connection structure according to claim 1 or 2, wherein the area of the multilayer metal film layer is larger than the intersection area of the island and the boss.
4. The connection structure according to claim 3, wherein the multilayer metal film layer has a thickness of 9.5 to 10.5 μm; preferably, the thickness of the Cr layer is 19-21nm, the thickness of the first Au layer is 5700-6300nm, the thickness of the Sn layer is 3800-4200nm, and the thickness of the second Au layer is 9.5-10.5 nm; the multilayer metal film layer is not connected with other Au electrodes.
5. Use of the quartz tuning fork and base joint structure of any of claims 1-4 in a quartz tuning fork gyroscope.
6. A quartz tuning fork gyroscope comprising the quartz tuning fork of any of claims 1-4 and a base coupling structure.
7. A method for connecting a quartz tuning fork and a base is characterized by comprising the following steps:
forming a plurality of metal film layers on the island at the center of the quartz tuning fork;
aligning the island of the quartz tuning fork with the boss of the base, performing micro-assembly, and connecting the quartz tuning fork and the base through the metal connecting layer.
8. The method of connecting according to claim 7, wherein said micro-assembling comprises the steps of:
aligning the island of the quartz tuning fork with the boss of the base, placing the island and the boss into bonding equipment, and vacuumizing to a value not greater than5×10- 3After Pa, fill N2To not more than 8X 104Pa and repeating at least 1 time;
heating from (30 + -10) deg.C to (220 + -10) deg.C for 1-5 min;
keeping at 220 + -10 deg.C for 1-2 min;
heating from (220 + -10) deg.C to (310 + -10) deg.C for 1-10 min;
keeping at 310 + -10 deg.C for 5-30 min;
cooling from (310 + -10) deg.C to (50 + -10) deg.C for 5-30 min;
heating from 50 + -10 deg.C to 200 + -10 deg.C for 1-5 min;
keeping at 200 + -10 deg.C for 1-5 min;
cooling from (200 + -10) deg.C to (30 + -10) deg.C for 1-5min to complete micro-assembly.
9. The connecting method according to claim 8, wherein forming a plurality of metal film layers on the island in the center of the quartz tuning fork comprises the following steps:
s1: sequentially depositing a Cr layer and a first Au layer on an island in the center of a quartz tuning fork;
s2: patterning a structure formed by the Cr layer and the first Au layer;
s3: preparing a Sn layer and a second Au layer on the structure obtained in the step S2 to obtain a multilayer metal film layer;
preferably, in step S1, the deposition is magnetron sputtering deposition;
in step S2, the patterning is to precisely define the structure obtained by the photolithography process S1, and then to form a target pattern by a wet etching process;
step S3 is specifically to precisely define the structure obtained in step S2 by using a photolithography process, then deposit a Sn layer and a second Au layer by using a thermal evaporation method, and finally obtain a multilayer metal film layer by using a photoresist stripping process.
10. The method of claim 9, wherein the micropackaging, temperature raising and temperature maintaining are performed with vacuumIs less than 8 x 104Pa；
When the plurality of metal film layers are formed on the island at the center of the quartz tuning fork, the vacuum degree is kept to be not more than 5 multiplied by 10 when the Cr layer and the first Au layer are deposited and the Sn layer and the second Au layer are deposited-3Pa。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010060372.9A CN111256673B (en) | 2020-01-19 | 2020-01-19 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010060372.9A CN111256673B (en) | 2020-01-19 | 2020-01-19 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111256673A true CN111256673A (en) | 2020-06-09 |
| CN111256673B CN111256673B (en) | 2021-09-10 |
Family
ID=70947927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010060372.9A Active CN111256673B (en) | 2020-01-19 | 2020-01-19 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111256673B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113790715A (en) * | 2021-11-16 | 2021-12-14 | 北京晨晶电子有限公司 | Surface-mounted quartz tuning fork gyroscope and processing method thereof |
| CN114199418A (en) * | 2021-11-29 | 2022-03-18 | 北京晨晶电子有限公司 | Quartz tuning fork pressure sensor |
| CN114543777A (en) * | 2020-11-24 | 2022-05-27 | 北京晨晶电子有限公司 | Internal vibration damping quartz tuning fork gyroscope |
| CN117464235A (en) * | 2023-12-27 | 2024-01-30 | 天津伍嘉联创科技发展股份有限公司 | Tuning fork welding method |
| CN114199418B (en) * | 2021-11-29 | 2024-05-10 | 北京晨晶电子有限公司 | Quartz tuning fork pressure sensor |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101199114A (en) * | 2005-06-30 | 2008-06-11 | 株式会社大真空 | Piezoelectric vibration piece and piezoelectric vibration device |
| CN102351141A (en) * | 2011-11-01 | 2012-02-15 | 北京大学 | Wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components |
| CN103138710A (en) * | 2011-11-23 | 2013-06-05 | 北京晨晶电子有限公司 | Connecting method of wafer and base and obtained crystal resonator |
| CN103250349A (en) * | 2011-02-07 | 2013-08-14 | 株式会社大真空 | Tuning-fork type piezoelectric vibrating reed and tuning-ork type piezoelectric vibrator |
| CN103471950A (en) * | 2013-09-23 | 2013-12-25 | 东南大学 | Multichannel quartz crystal microbalance detection device |
| US8881370B2 (en) * | 2008-09-23 | 2014-11-11 | Custom Sensors & Technologies, Inc. | Method of fabricating an inertial sensor |
| CN104316039A (en) * | 2014-10-13 | 2015-01-28 | 北京遥测技术研究所 | Quartz pitchfork gyroscope with built-in integrated charge amplifier |
| CN104425390A (en) * | 2013-09-11 | 2015-03-18 | 精工爱普生株式会社 | Circuit board, method for manufacturing circuit board, electronic device, electronic apparatus, and moving object |
| CN104819711A (en) * | 2015-03-27 | 2015-08-05 | 北京晨晶电子有限公司 | Method for processing three-dimensional quartz micromechanical gyro tuning fork lateral electrode |
| CN104993051A (en) * | 2015-05-28 | 2015-10-21 | 福州大学 | Preparation method of metal membrane sheet array/organic semiconductor composite conducting channel thin film transistor |
| CN105502967A (en) * | 2014-10-17 | 2016-04-20 | 北京自动化控制设备研究所 | Quartz bonding method based on gold-tin co-crystal |
| CN105634436A (en) * | 2015-12-22 | 2016-06-01 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator with circular wafer structure and manufacture method thereof |
| US20170093336A1 (en) * | 2002-03-06 | 2017-03-30 | Piedek Technical Laboratory | Quartz crystal unit, quartz crystal oscillator and electronic apparatus |
| US20190004020A1 (en) * | 2017-02-28 | 2019-01-03 | Vaon, Llc | Bimetal doped-metal oxide-based chemical sensors |
-
2020
- 2020-01-19 CN CN202010060372.9A patent/CN111256673B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170093336A1 (en) * | 2002-03-06 | 2017-03-30 | Piedek Technical Laboratory | Quartz crystal unit, quartz crystal oscillator and electronic apparatus |
| CN101199114A (en) * | 2005-06-30 | 2008-06-11 | 株式会社大真空 | Piezoelectric vibration piece and piezoelectric vibration device |
| US8881370B2 (en) * | 2008-09-23 | 2014-11-11 | Custom Sensors & Technologies, Inc. | Method of fabricating an inertial sensor |
| CN103250349A (en) * | 2011-02-07 | 2013-08-14 | 株式会社大真空 | Tuning-fork type piezoelectric vibrating reed and tuning-ork type piezoelectric vibrator |
| CN102351141A (en) * | 2011-11-01 | 2012-02-15 | 北京大学 | Wafer level vacuum encapsulating method for MEMS (Micro Electro Mechanical System) components |
| CN103138710A (en) * | 2011-11-23 | 2013-06-05 | 北京晨晶电子有限公司 | Connecting method of wafer and base and obtained crystal resonator |
| CN104425390A (en) * | 2013-09-11 | 2015-03-18 | 精工爱普生株式会社 | Circuit board, method for manufacturing circuit board, electronic device, electronic apparatus, and moving object |
| CN103471950A (en) * | 2013-09-23 | 2013-12-25 | 东南大学 | Multichannel quartz crystal microbalance detection device |
| CN104316039A (en) * | 2014-10-13 | 2015-01-28 | 北京遥测技术研究所 | Quartz pitchfork gyroscope with built-in integrated charge amplifier |
| CN105502967A (en) * | 2014-10-17 | 2016-04-20 | 北京自动化控制设备研究所 | Quartz bonding method based on gold-tin co-crystal |
| CN104819711A (en) * | 2015-03-27 | 2015-08-05 | 北京晨晶电子有限公司 | Method for processing three-dimensional quartz micromechanical gyro tuning fork lateral electrode |
| CN104993051A (en) * | 2015-05-28 | 2015-10-21 | 福州大学 | Preparation method of metal membrane sheet array/organic semiconductor composite conducting channel thin film transistor |
| CN105634436A (en) * | 2015-12-22 | 2016-06-01 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator with circular wafer structure and manufacture method thereof |
| US20190004020A1 (en) * | 2017-02-28 | 2019-01-03 | Vaon, Llc | Bimetal doped-metal oxide-based chemical sensors |
Non-Patent Citations (2)
| Title |
|---|
| JINXING LIANG，等: "Realization of quartz MEMS accelerometer based on flip chip process", 《 THE 8TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS》 * |
| 刘 璇，等: "基于单壁碳纳米管与镍基底的超声纳米焊接及场发射性能研究", 《纳米技术与精密工程》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114543777A (en) * | 2020-11-24 | 2022-05-27 | 北京晨晶电子有限公司 | Internal vibration damping quartz tuning fork gyroscope |
| CN114543777B (en) * | 2020-11-24 | 2023-04-25 | 北京晨晶电子有限公司 | Internal vibration damping quartz tuning fork gyroscope |
| CN113790715A (en) * | 2021-11-16 | 2021-12-14 | 北京晨晶电子有限公司 | Surface-mounted quartz tuning fork gyroscope and processing method thereof |
| CN114199418A (en) * | 2021-11-29 | 2022-03-18 | 北京晨晶电子有限公司 | Quartz tuning fork pressure sensor |
| CN114199418B (en) * | 2021-11-29 | 2024-05-10 | 北京晨晶电子有限公司 | Quartz tuning fork pressure sensor |
| CN117464235A (en) * | 2023-12-27 | 2024-01-30 | 天津伍嘉联创科技发展股份有限公司 | Tuning fork welding method |
| CN117464235B (en) * | 2023-12-27 | 2024-03-01 | 天津伍嘉联创科技发展股份有限公司 | Tuning fork welding method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111256673B (en) | 2021-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111256673B (en) | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method | |
| US9511991B2 (en) | Encapsulation structure including a mechanically reinforced cap and with a getter effect | |
| US7825029B2 (en) | Method for the production of structured layers on substrates | |
| EP1198835B1 (en) | Dual wafer attachment process | |
| TWI555698B (en) | Composite micromechanical component and method of fabricating the same | |
| US7855458B2 (en) | Electronic component | |
| JP2005198233A (en) | Fbar device and manufacturing method thereof | |
| CN104760925A (en) | Thin film supporting beam preparation method | |
| US8581355B2 (en) | Micro electric mechanical system device and method of producing the same | |
| CN104520044A (en) | Method for joining ceramic bodies by means of an active hard solder, assembly comprising at least two joined ceramic bodies, in particular pressure measuring cell | |
| CN100483622C (en) | Method for controlling tantalumoxide embedded film resistor precision for anode oxidation process | |
| JP5877852B2 (en) | Removable micro and nano elements for space-saving use | |
| JP2008114448A (en) | Transfer substrate and transfer method using the same | |
| JP5581619B2 (en) | Method for manufacturing piezoelectric device and piezoelectric device | |
| JPS592349A (en) | Formation of oxide superconductor circuit | |
| CN111232915B (en) | Multi-layer mask layer structure, preparation method thereof and MEMS device | |
| TWI681938B (en) | Method of fabricating metal thin film supported by glass support | |
| US11955585B2 (en) | Method for coating chips | |
| JP5099061B2 (en) | Coating film forming method and piezoelectric element manufacturing method | |
| KR102200437B1 (en) | Method for manufacturing through hole electrode | |
| JPS5892234A (en) | Semiconductor device and manufacture thereof | |
| CN112331612A (en) | Method for manufacturing semiconductor chip | |
| JP5348252B2 (en) | Method for manufacturing thin film resistor device | |
| CN112938888A (en) | MEMS sensor chip packaging structure with stress adjustment and method | |
| KR100868386B1 (en) | Method for the patterned coating of a substrate and coated substrate using the method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |