CN100483622C - Method for controlling tantalumoxide embedded film resistor precision for anode oxidation process - Google Patents
Method for controlling tantalumoxide embedded film resistor precision for anode oxidation process Download PDFInfo
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- CN100483622C CN100483622C CNB2007100414026A CN200710041402A CN100483622C CN 100483622 C CN100483622 C CN 100483622C CN B2007100414026 A CNB2007100414026 A CN B2007100414026A CN 200710041402 A CN200710041402 A CN 200710041402A CN 100483622 C CN100483622 C CN 100483622C
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Abstract
This invention involves the method of using anodic oxidation method to control the tantalum nitride thin film resistor buried accuracy. These tantalum nitride thin film resistor graphics is prepared by the process of reaction sputtering in advance and post Ion-beam etching, then through direct current sputtering process to deposit auluminium film onto resistor film and conduct aluminium anode oxidation so the aluminium film on the surface of the resistor is fully oxidated. The precise resistance of tantalum nitride film can be obtained through controlling film resistor sputtering thickness and aluminium anode oxidation voltage. The resistor temperature coefficient is -200 to -50x10-6/degree C. In the room temperature to 200 degreeC temperature range maintain linear, room temperature to 200 degreeC after the 10th temperature cycle resistance value change is less than one percent. It can precisely control tantalum nitride resistors film resistance, applicable to high-density MCM-D substrates passive resistance embedding.
Description
Technical field
The present invention relates to a kind of manufacture method of utilizing controlling tantalumoxide embedded film resistor precision for anode oxidation process, belong to the encapsulation field of high density MCM-D substrate.
Background technology
MCM-D (Multichip Module Deposition film multi-chip module) the thin-film multilayer interconnection structure embedded set passive component of substrate and the technology of active device can further improve the packaging density and the assembly property of assembly, make it have more function.The method of general embedding film resistor or resistor network is to adopt multilayer composite metal films such as NiCr, TaN or TiW not only as adhesion layer but also can be used as resistance film, forms film resistor and resistance central terminal electrode and multi-layer compound film wiring or welding zone simultaneously by alignment process.Usually embedding film resistor is produced on substrate surface, also can be produced in the intermediate layer of thin-film multilayer interconnection structure.
The precision of film resistor is by square resistance side's resistance precision and pattern precision decision.The control of side's resistance precision relies on the resistance monitoring to realize that pattern precision depends on the degree of approximation of the influence and the calculating of process conditions at film forming procedure.More in on-chip resistor number, be difficult to again reach under the situation of anticipate accuracy, in order to improve rate of finished products, just need finely tune.Yet fine setting can improve product cost, so adopt fine setting still to adopt strict control process parameters to improve resistance accuracy, should determine according to actual conditions.The fine-tuning mode of resistor can divide for a change figure and the composition or the internal structure two big classes that change resistance material again.Changing the general resistor resistance that only can make of figure raises, so when carrying out graphic designs, should guarantee the nominal resistance of the calculated value of this figure before fine setting, and the calculated value after finely tuning to greatest extent is bigger than nominal resistance less than resistor.The figure adjustment not only makes resistance increase, and has caused the inhomogeneous of resistor power density and Temperature Distribution.Must guarantee during design that the narrowest width of remainder must not be less than the value that power density allowed after adjusting.Change the composition of resistance material or the method for trimming of structure, the thin-film electro resistance is less than the resistance value of design in advance before the fine setting, guarantees that by the microstructure that changes resistance resistance reaches designing requirement.
Alumilite process MCM-D substrate thin-film material when embedding resistance also should guarantee to produce oxidation or remain unchanged at the wiring anode oxidation process, and can not produce anodic dissolution processes.Therefore, the embedding resistance material of selection also should belong to the compound of valve metal or valve metal.
Summary of the invention
For at alumilite process MCM-D substrate at embedding resistance, improve the packaging density and the assembly property of assembly, can effectively control the precision of embedding resistance, the present invention proposes a kind of manufacture method of utilizing anode oxidation method to control the embedding film resistor precision of tantalum nitride, adopted anodizing technology, change tantalum nitride membrane resistive surface structure, the film resistor resistance is raise, have lower negative temperature coefficient of resistance and higher thermal stability.
The technical solution used in the present invention is: at first utilize the method for reaction magnetocontrol sputtering that tantalum nitride membrane is deposited on the microcrystalline glass, and by the conditioned reaction gas flow ratio, side's resistance of control sputter rear film resistance.Utilize the ion beam dry etch process to etch the film resistor figure, utilize direct current sputtering technology on film resistor, to deposit the layer of aluminum film again, adopt photoresist to make mask, in acid solution, carry out the anodic oxidation of aluminium porous, except that the aluminium of electrode position, resistive surface and aluminium film on every side are by complete oxidation, can obtain accurate tantalum oxide film resistor by control film resistor sputter thickness and alumilite process voltage, also promptly improve the surface texture of resistance film, make it to obtain lower negative temperature coefficient of resistance and better stable by the structure of alumilite process formation Woelm Alumina.Thereby the advantage of this method is to change by sputter and two technologies combinations of oxidation the resistance of the surface texture controlling resistance of film resistor, and this technology and alumilite process process compatible can be embedded in film resistor in the alumilite process MCM-D substrate.(seeing embodiment for details)
Concrete processing step of the present invention is as follows:
A. the method that adopts reaction magnetocontrol sputtering and dry etching to combine is made resistance pattern
(a) at first utilize the method for reaction magnetocontrol sputtering that tantalum nitride membrane is deposited on the microcrystalline glass;
(b) utilize the ion beam dry etch process to etch the film resistor figure;
The sputter reacting gas is nitrogen and argon gas in the described steps A (a), and the gas flow voltage ratio is N
2: Ar=1:(30～50);
The thickness of tantalum nitride membrane is at 100-200nm in the described steps A (b); Film side's resistance that sputter obtains is 30～60 Ω/.
B. deposition of aluminum film and oxidation above the film resistor
(a) the thick aluminium film of the about 0.8-2um of magnetically controlled DC sputtering on film resistor;
(b) adopt photoresist to make mask, carry out the aluminium porous anode in solution, except that the aluminium of resistance extraction electrode position, resistive surface and aluminium film on every side are by complete oxidation.Anodic oxidation solution is the solution of phosphoric acid or sulfuric acid medium capacity; Anodic oxidation voltage is 70-90V, and it is 80～110 Ω/ that the side by the film resistor that obtains of control voltage hinders.
(c) film resistor is subjected to the influence of top aluminium film porous oxidation, form bulge-structure on the surface, tantalum nitride resistance raises under the control of oxidation voltage, and temperature coefficient of resistance keeps linear in the temperature range of room temperature～200 ℃, and the temperature coefficient of resistance of embedding film is-200～-50 * 10
-6/ ℃.
Description of drawings
Fig. 1 is reaction magnetocontrol sputtering tantalum nitride membrane and a photoetching formation resistance pattern sectional view on glass-ceramic substrate.(a) tantalum nitride membrane resistance deposition, (b) photoresist is made mask dry etching tantalum nitride, (c) removes the photoresist mask.
Fig. 2 adopts direct current sputtering to carry out the flow chart of anodic oxidation control tantalum nitride structure and performance behind the resistive surface deposition of aluminum film.
(a) deposition of aluminum film (b) applies photoresist and makes the porous oxidation mask, and (c) porous anode of aluminium film (d) is removed the photoresist mask.
Fig. 3 is the sectional view of the embedding tantalum nitride membrane resistance of the described alumilite process multi-layer wire substrate of embodiment.
Fig. 4 is that the temperature coefficient of resistance of embodiment tantalum nitride membrane resistance varies with temperature curve chart.
Embodiment
Be at alumilite process substrate embedded set tantalum nitride membrane resistance below, utilize anode oxidation method to control the embedding film resistor precision of tantalum nitride,, obtain satisfactory film resistor by control sputtered film thickness and anodic oxidation voltage.
At first, reaction magnetocontrol sputtering cvd nitride tantalum films resistance 102 on glass-ceramic substrate 101 adopts high-purity tantalum target, and the sputter reacting gas is nitrogen and argon gas, and the gas flow voltage ratio is N
2: Ar=1:(30～50), the thickness of tantalum nitride membrane is at 100nm, film side's resistance that sputter obtains is 50～60 Ω/ [Fig. 1 (a)], utilize photoresist 103 to make the mask of dry etching [Fig. 1 (b)] then, the Ion-beam dry method is removed the outer tantalum nitride membrane of resistance pattern, utilizes the photoresist 103 above the acetone removal resistance pattern.
Fig. 2 adopts anode oxidation method to change tantalum nitride membrane 102 structures, control film resistor precision and raising resistance stability.At first the thick aluminium film 104 of the about 1um of magnetically controlled DC sputtering on film resistor adopts photoresist 103 to make mask, carries out the aluminium porous anode in solution, removes the electrode position aluminium film 104 that resistance is drawn, and resistive surface and aluminium film on every side are by complete oxidation 105.Film resistor is subjected to the influence of top aluminium film porous oxidation, form bulge-structure on the surface, the oxidized formation tantalum oxide 106 of part tantalum nitride membrane, remaining film resistor 102 raises under the control of oxidation voltage, it is linear that temperature coefficient of resistance is, and has lower negative temperature coefficient of resistance.
Fig. 3 is the described film resistor 102 that is embedded in the multilayer wiring alumilite process substrate of embodiment, and side's resistance is 105～108 Ω/, and temperature coefficient of resistance is-150～-80 * 10
-6/ ℃.Keep linear in the temperature range of room temperature～200 ℃, through resistance change after 10 temperature cycles of room temperature～200 ℃ less than 1%.
Fig. 4 is the temperature coefficient of resistance of the described embedding film resistor room temperature of present embodiment～200 ℃.
Claims (8)
1, the method of controlling tantalumoxide embedded film resistor precision for anode oxidation process, it is characterized in that at first utilizing the method for reaction magnetocontrol sputtering that tantalum nitride membrane is deposited on the microcrystalline glass, utilize the ion beam dry etch process to etch the film resistor figure, utilize direct current sputtering technology that the aluminium film is deposited on the film resistor again, adopt photoresist to make mask, in acid solution, carry out the aluminium porous anode, except that the aluminium of electrode position, resistive surface and aluminium film on every side are by complete oxidation, by control film resistor sputter thickness and alumilite process voltage, make tantalum nitride membrane resistance.
2, by the method for the described controlling tantalumoxide embedded film resistor precision for anode oxidation process of claim 1, it is characterized in that concrete processing step is:
A. adopt the method for reaction magnetocontrol sputtering and the dry etching making resistance pattern that combines
(a) at first utilize the method for reaction magnetocontrol sputtering that nitrogenize is carried on a shoulder pole thin film deposition on microcrystalline glass;
(b) utilize photoresist to make mask ion beam dry etch process and etch the film resistor pattern etching;
B. deposition of aluminum film and oxidation above the film resistor
(a) the thick aluminium film of magnetically controlled DC sputtering 0.8～2 μ m on film resistor;
(b) adopt photoresist to make mask, carry out the aluminium porous anode in solution, except that the aluminium of electrode position, resistive surface and aluminium film on every side are by complete oxidation;
(c) the aluminium film on film resistor surface forms bulge-structure, and tantalum nitride resistance raises under the control of oxidation voltage, and temperature coefficient of resistance keeps linear.
3, by the method for the described controlling tantalumoxide embedded film resistor precision for anode oxidation process of claim 2, it is characterized in that the sputter reacting gas is nitrogen and argon gas in the steps A, the gas flow voltage ratio is N
2: Ar=1:30～50.
4, by the method for the described controlling tantalumoxide embedded film resistor precision for anode oxidation process of claim 2, the thickness that it is characterized in that tantalum nitride membrane described in the steps A is at 100～200nm, and film side's resistance that sputter obtains is 30～60 Ω/mouths.
5,, it is characterized in that adopting the thickness of magnetically controlled DC sputtering aluminium film among the step B is 1 μ m by the method for the described controlling tantalumoxide embedded film resistor precision for anode oxidation process of claim 2.
6,, it is characterized in that the solution that the anodic oxidation solution described in the step B adopts phosphoric acid or sulfuric acid to have medium capacity by the method for claim 2 or 5 described controlling tantalumoxide embedded film resistor precision for anode oxidation process.
7, by the method for claim 2 or 6 described controlling tantalumoxide embedded film resistor precision for anode oxidation process, it is characterized in that the anodic oxidation voltage described in the step B is 70～90V.
8, by the method for each described controlling tantalumoxide embedded film resistor precision for anode oxidation process in the claim 1～5, it is characterized in that the embedding film resistor temperature coefficient of tantalum is-200～-50 * 10
-6/ ℃.Keep linear in the temperature range of room temperature～200 ℃, through resistance change after 10 temperature cycles of room temperature～200 ℃ less than 1%.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100414026A CN100483622C (en) | 2007-05-29 | 2007-05-29 | Method for controlling tantalumoxide embedded film resistor precision for anode oxidation process |
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| CNB2007100414026A CN100483622C (en) | 2007-05-29 | 2007-05-29 | Method for controlling tantalumoxide embedded film resistor precision for anode oxidation process |
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| CN100483622C true CN100483622C (en) | 2009-04-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102237165A (en) * | 2010-04-28 | 2011-11-09 | 中国科学院微电子研究所 | Manufacturing method of 50 ohms TaN film resistor combined with MMIC technology |
| CN103435003A (en) * | 2013-08-29 | 2013-12-11 | 上海宏力半导体制造有限公司 | Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR |
| CN104409323B (en) * | 2014-10-24 | 2017-05-24 | 中国电子科技集团公司第四十一研究所 | Microwave film resistor manufacture method |
| CN108598259A (en) * | 2018-04-09 | 2018-09-28 | 上海集成电路研发中心有限公司 | A kind of preparation method of film resistor |
| CN115323318B (en) * | 2022-07-07 | 2023-11-14 | 北京科技大学 | Method for improving adhesion of diamond-based film resistor |
| CN116612952A (en) * | 2023-06-27 | 2023-08-18 | 广州方邦电子股份有限公司 | Thin film resistor and circuit board |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354520A (en) * | 2000-11-22 | 2002-06-19 | 三菱电机株式会社 | Semiconductor integrated circuit |
| US6607962B2 (en) * | 2001-08-09 | 2003-08-19 | Maxim Integrated Products, Inc. | Globally planarized backend compatible thin film resistor contact/interconnect process |
| CN1603428A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Low temperature annealing process for relieving MOCVD TiN membrane stress and resistance |
| US20050196966A1 (en) * | 2004-03-08 | 2005-09-08 | Sung-Ling Su | Method for fabricating embedded thin film resistors of printed circuit board |
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- 2007-05-29 CN CNB2007100414026A patent/CN100483622C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354520A (en) * | 2000-11-22 | 2002-06-19 | 三菱电机株式会社 | Semiconductor integrated circuit |
| US6607962B2 (en) * | 2001-08-09 | 2003-08-19 | Maxim Integrated Products, Inc. | Globally planarized backend compatible thin film resistor contact/interconnect process |
| US20050196966A1 (en) * | 2004-03-08 | 2005-09-08 | Sung-Ling Su | Method for fabricating embedded thin film resistors of printed circuit board |
| CN1603428A (en) * | 2004-11-04 | 2005-04-06 | 上海华虹（集团）有限公司 | Low temperature annealing process for relieving MOCVD TiN membrane stress and resistance |
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Granted publication date: 20090429 Termination date: 20120529 |