CN103435003A - Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR - Google Patents
Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR Download PDFInfo
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- CN103435003A CN103435003A CN2013103863319A CN201310386331A CN103435003A CN 103435003 A CN103435003 A CN 103435003A CN 2013103863319 A CN2013103863319 A CN 2013103863319A CN 201310386331 A CN201310386331 A CN 201310386331A CN 103435003 A CN103435003 A CN 103435003A
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Abstract
The invention provides a method for etching a contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and a method for manufacturing the contact hole for MEMS AMR. The method for etching the contact hole for MEMS AMR comprises the following steps of executing physical vapor deposition by utilizing physical vapor deposition equipment to form a tantalum nitride layer; executing soft etching on the tantalum nitride layer by utilizing a light resistant mask membrane so as to form the contact hole; after the contact hole is formed, removing the light resistant mask membrane, wherein polymer residues remain on the tantalum nitride layer; after the light resistant mask membrane is removed, executing soft sputter etching on the tantalum nitride layer so as to remove a small quantity of polymer residues on the tantalum nitride layer and the surface layer of the tantalum nitride layer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method of the contact hole etching for MEMS AMR and corresponding MEMS AMR contact hole manufacture method.
Background technology
MEMS (MEMS, Micro-Electro-Mechanical Systems) is a kind of industrial technology that microelectric technique and mechanical engineering are fused together, and its opereating specification is in micrometer range.
Nowadays, the MEMS (MEMS AMR) that utilizes anisotropic magnetoresistive (AMR, anisotropic magneto resistive) effect to manufacture has highly sensitive, Heat stability is good, the cost of material is low, and preparation technology is simple, is widely used.
Form in technique first PVD physical vapour deposition (PVD) tantalum nitride (TaN), then etching opening under photo-resistive mask at MEMS AMR contact hole.
But on the one hand, in etching TaN, the effect due to bombardment, produce more polymer, these polymer buildup, around the sidewall of opening, form and deposit (re-deposition) effect again.On the other hand, the effect due to bombardment, may cause the etching plasma damage.Thus, contact hole can present larger unsettled contact resistance Rc.
Thus, thus be desirable to provide the technical scheme that a kind of polymer produced when can eliminate etching TaN and etching plasma damage improve contact resistance.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, thereby provides a kind of polymer produced when can eliminate etching TaN and etching plasma damage to improve the method for the contact hole etching for MEMS AMR of contact resistance.
In order to realize above-mentioned technical purpose, according to a first aspect of the invention, provide a kind of method of the contact hole etching for MEMS AMR, comprising:
First step: utilize Pvd equipment to carry out physical vapour deposition (PVD) to form tantalum nitride layer;
Second step: utilize photo-resistive mask to carry out soft etching to described tantalum nitride layer, in order to form contact hole;
Third step: remove photo-resistive mask after forming contact hole, wherein residual polyalcohol residue on described tantalum nitride layer;
The 4th step: after removing photo-resistive mask, described tantalum nitride layer is carried out to soft ise, in order to remove polymer residues (particularly, may be a small amount of polymer residues) on described tantalum nitride layer and the top layer of described tantalum nitride layer.
Preferably, the thickness of described tantalum nitride layer for example, between between 350A to 1000A, between 350A to 550A.
Preferably, in second step, utilize photo-resistive mask to carry out the substrate bias power of soft etching between between 20W to 80W to stating tantalum nitride layer.
The thickness on the top layer of the described tantalum nitride layer of preferably, removing in the 4th step is between between 50A to 150A.
Preferably, carry out the soft ise that described tantalum nitride layer is carried out in described the 4th step in the Pvd equipment used at described first step.
In order to realize above-mentioned technical purpose, according to a second aspect of the invention, provide a kind of MEMS AMR contact hole manufacture method that has adopted the above-mentioned method of the contact hole etching for MEMS AMR according to first aspect present invention.
In the method for the contact hole etching for MEMS AMR according to the present invention, owing to having adopted soft ise to carry out etching to tantalum nitride layer, polymer residues on described tantalum nitride layer and the top layer of described tantalum nitride layer have been removed thus, thereby eliminated the plasma damage in the top layer of polymer residues and described tantalum nitride layer, thereby improved contact resistance.
The accompanying drawing explanation
By reference to the accompanying drawings, and, by reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows according to the preferred embodiment of the invention the flow chart for the contact hole etching method of MEMS AMR.
Fig. 2 shows the micro-view of the contact hole by obtaining for the contact hole etching method of MEMS AMR according to the preferred embodiment of the invention.
It should be noted that, accompanying drawing is for the present invention is described, and unrestricted the present invention.Note, the accompanying drawing that means structure may not be to draw in proportion.And, in accompanying drawing, identical or similar element indicates identical or similar label.
The specific embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 1 schematically shows according to the preferred embodiment of the invention the flow chart for the contact hole etching method of MEMS AMR.
Specifically, as shown in Figure 1, the contact hole etching method for MEMS AMR comprises according to the preferred embodiment of the invention:
First step S1: utilize Pvd equipment to carry out physical vapour deposition (PVD) to form tantalum nitride layer; For example, preferably, the thickness of described tantalum nitride layer for example, between between 350A to 1000A, between 350A to 550A;
Second step S2: utilize photo-resistive mask to carry out soft etching to described tantalum nitride layer, in order to form contact hole; Wherein, " soft etching " refers to the etching process that the relatively low-level substrate bias power of utilization carries out etching; For example, preferably, utilize photo-resistive mask to carry out the substrate bias power of soft etching between between 20W to 80W to stating tantalum nitride layer;
Third step S3: remove photo-resistive mask after forming contact hole, now can be on described tantalum nitride layer the residual polyalcohol residue; Can adopt any suitable method to remove photo-resistive mask;
The 4th step S4: after removing photo-resistive mask, described tantalum nitride layer is carried out to soft ise, in order to remove polymer residues (particularly, may be a small amount of polymer residues) on described tantalum nitride layer and the top layer of described tantalum nitride layer; For example, preferably, the thickness on the top layer of the described tantalum nitride layer of removing in the 4th step S4 is between between 50A to 150A.
Carry out the soft ise that described tantalum nitride layer is carried out in described the 4th step S4 in the Pvd equipment that preferably, can use at described first step S1.Now, although be Pvd equipment (PVD board), be used as the equipment of etching under this step.
Fig. 2 shows the micro-view of the contact hole by obtaining for the contact hole etching method of MEMS AMR according to the preferred embodiment of the invention.As shown in Figure 2, according to the preferred embodiment of the invention for the contact hole etching method of MEMS AMR, owing to having adopted soft ise to carry out etching to tantalum nitride layer, polymer residues on described tantalum nitride layer and the top layer of described tantalum nitride layer have been removed thus, thereby eliminated the plasma damage in the top layer of polymer residues and described tantalum nitride layer, thereby improved contact resistance.
According to another preferred embodiment of the invention, also provide a kind of adopted above-mentioned according to the preferred embodiment of the invention for the MEMS AMR contact hole manufacture method of the contact hole etching method of MEMS AMR.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as the term in specification " first ", " second ", " the 3rd " are only for each assembly of distinguishing specification, element, step etc., rather than for meaning logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (6)
1. the method for the contact hole etching for MEMSAMR is characterized in that comprising:
First step: utilize Pvd equipment to carry out physical vapour deposition (PVD) to form tantalum nitride layer;
Second step: utilize photo-resistive mask to carry out soft etching to described tantalum nitride layer, in order to form contact hole;
Third step: remove photo-resistive mask after forming contact hole, wherein residual polyalcohol residue on described tantalum nitride layer;
The 4th step: after removing photo-resistive mask, described tantalum nitride layer is carried out to soft ise, in order to remove polymer residues a small amount of on described tantalum nitride layer and the top layer of described tantalum nitride layer.
2. the method for the contact hole etching for MEMS AMR according to claim 1, is characterized in that, the thickness of described tantalum nitride layer is between between 350A to 1000A.
3. the method for the contact hole etching for MEMS AMR according to claim 1 and 2, is characterized in that, in second step, utilizes photo-resistive mask to carry out the substrate bias power of soft etching between between 20W to 80W to stating tantalum nitride layer.
4. the method for the contact hole etching for MEMS AMR according to claim 1 and 2, is characterized in that, the thickness on the top layer of the described tantalum nitride layer of removing in the 4th step is between between 50A to 150A.
5. the method for the contact hole etching for MEMS AMR according to claim 1 and 2, is characterized in that, carries out the soft ise that described tantalum nitride layer is carried out in described the 4th step in the Pvd equipment used at described first step.
6. one kind has adopted the MEMS AMR contact hole manufacture method according to the described method of the contact hole etching for MEMS AMR of one of claim 1 to 5.
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| CN2013103863319A CN103435003A (en) | 2013-08-29 | 2013-08-29 | Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR |
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| CN2013103863319A CN103435003A (en) | 2013-08-29 | 2013-08-29 | Method for etching contact hole for MEMS (Micro Electro Mechanical Systems) AMR (Adaptive Multiple Rate) and method for manufacturing contact hole for MEMS AMR |
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Cited By (2)
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| CN104176698A (en) * | 2014-08-27 | 2014-12-03 | 上海华虹宏力半导体制造有限公司 | Integrated MEMS (micro-electromechanical systems) device and manufacturing method thereof |
| CN106206410A (en) * | 2015-05-07 | 2016-12-07 | 北大方正集团有限公司 | A kind of contact hole etching method and device |
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| KR20010061614A (en) * | 1999-12-28 | 2001-07-07 | 윤종용 | Method for shame contact hole of semiconductor device |
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| CN104176698A (en) * | 2014-08-27 | 2014-12-03 | 上海华虹宏力半导体制造有限公司 | Integrated MEMS (micro-electromechanical systems) device and manufacturing method thereof |
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| CN106206410A (en) * | 2015-05-07 | 2016-12-07 | 北大方正集团有限公司 | A kind of contact hole etching method and device |
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Application publication date: 20131211 |