CN203932122U - For the mask of Organic Light Emitting Diode processing - Google Patents
For the mask of Organic Light Emitting Diode processing Download PDFInfo
- Publication number
- CN203932122U CN203932122U CN201320582101.5U CN201320582101U CN203932122U CN 203932122 U CN203932122 U CN 203932122U CN 201320582101 U CN201320582101 U CN 201320582101U CN 203932122 U CN203932122 U CN 203932122U
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- CN
- China
- Prior art keywords
- mask
- coating
- chamber
- utility
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000576 coating method Methods 0.000 claims abstract description 23
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 26
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- -1 fluoro free radical Chemical class 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000013043 chemical agent Substances 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The utility model relates to the improvement of iron-nickel alloy coating.Execution mode of the present utility model provides the mask using at the CVD chamber of manufacturing for OLED conventionally.Mask is made up of the dilval that scribbles oxide material, and described oxide material is such as being iron oxide (III) (Fe
3o
4) or yittrium oxide (Y
2o
3).
Description
Technical field
Execution mode of the present utility model is usually directed to mask, and execution mode of the present utility model relates to the iron-nickel alloy mask using at chemical vapour deposition (CVD) (CVD) chamber of manufacturing for Organic Light Emitting Diode (OLED) especially.
Background technology
Substrate processing chamber provides various functions.Conventionally,, in the time of dielectric layer on substrate, be gathered in from the residue of depositing operation on the sidewall and other surfaces for the treatment of chamber.It is mask that a kind of in treatment chamber has the element that residue is deposited on.These depositions can become frangible and stain substrate surface.Because chamber is normally for the part of the integration tool of fast processing substrate, so the maintenance of chamber and chamber element and clean and must need the minimum time.Thereby in order to reduce the possibility of contamination and to improve the output of chamber, need effectively and the surface of wash chamber and chamber element in time.
Current, comprise that for remove the mechanism of siliceous or carbon deposits from the surface of chamber element remote plasma cleans, original position RF plasma clean, or RF aided remote plasma clean.Remote plasma based on fluoro-gas chemical agent can be used for wash chamber element surface.For example, can remotely light such as NF
3purge gas become plasma, and etch away and be deposited on chamber and the lip-deep film of chamber element from the free radical that is incorporated into the plasma in chamber.
Need to and effectively between chamber clean, average out in efficient chamber clean.Be conducive to wash chamber element although some clean chemical agents, thereby described cleaning chemical agent may be in fact and chamber element id reaction and damage chamber element.Exist in the art for during chamber clean by needs that can not impaired chamber element, described chamber element is such as mask.
Utility model content
Execution mode of the present utility model provides the mask using at the CVD chamber of manufacturing for OLED conventionally.Mask is made up of the dilval that scribbles oxide material, and described oxide material is such as being iron oxide (III) (Fe
3o
4) or yittrium oxide (Y
2o
3).
In one embodiment, the mask for Organic Light Emitting Diode processing is disclosed.Described mask has the Fe of scribbling
3o
4or Y
2o
3dilval body.
Brief description of the drawings
Therefore, can at length understand the mode of above-mentioned feature of the present utility model, can reference implementation mode obtain the of the present utility model more specific description of brief overview above, some execution modes in described execution mode are illustrated in the drawings.But, it should be noted that accompanying drawing only illustrates exemplary embodiment of the present utility model and therefore accompanying drawing is not considered as limiting category of the present utility model, because the utility model can allow other equal effectively execution modes.
Fig. 1 is the cutaway view with the treatment chamber of processing for OLED according to an execution mode of the present utility model.
Fig. 2 is according to the top view of the mask of an execution mode of the present utility model.
For the ease of understanding, possible in the situation that, specify the similar elements shared to all figure with similar elements symbol.Can expect, disclosed element can be advantageously used in other execution modes without specific narration in the situation that in one embodiment.
Embodiment
Execution mode of the present utility model provides the mask using at the CVD chamber of manufacturing for OLED conventionally.Mask is to be made up of the dilval that scribbles oxide material, described oxide material such as iron oxide (III) (Fe
3o
4) or yittrium oxide (Y
2o
3).
The utility model is described as hereinafter illustratively for the treatment of in system, described treatment system is such as the CVD system that can obtain from AKT America, AKT America is Santa Clara, the Applied Materials of California, the branch of Inc..However, it should be understood that the utility model also application to some extent in other system configuration, described other system configuration comprises those system configuration of being sold by other manufacturers.
Fig. 1 is according to the schematic sectional view of the CVD equipment 100 of an execution mode.Equipment 100 comprises chamber body 102, and described chamber body 102 has the opening 104 by one or more walls, to allow one or more substrates 106 and mask 108 to be inserted in described chamber body 102.During processing, substrate 106 is disposed in the substrate support relative with diffuser 112 110, described diffuser 112 has one or more openings 114 of diffuser 112 described in break-through, enters the processing space 116 between diffuser 112 and substrate 106 to allow processing gas.
Mask 108 can be used for the region of covered substrate 140, does not allow deposition materials on wherein said region.Mask 108 is disposed in multiple motion alignment member 168, and masking structure 128 is disposed on protuberance 130, and described protuberance 130 extends from one or more inwalls of chamber body 102.Substrate 106 is disposed in substrate support 110.Before processing, mask 108 is aimed at substrate 106 by multiple motion alignment member and mask 108 is dropped on substrate 106 by actuator 124.Then, substrate support 110 rises on rod member 126, until masking structure 128 contact masks 108.Substrate support 110 continues to rise, until substrate 106, mask 108 and masking structure 128 are arranged in the processing position relative with diffuser 112.Then, process gas and passed through from one or more gas sources 132 opening being formed on backboard 134, bias voltage is provided to diffuser simultaneously.
After several times cycle for the treatment of, be gathered in from the residue of depositing operation on the sidewall and other surfaces of CVD equipment 100.In one embodiment, be deposited on substrate 140 as the encapsulating material of OLED device such as the dielectric material of silicon nitride, and dielectric material also can be gathered on the sidewall and other surfaces of CVD equipment 100.For the surface from CVD equipment 100 with remove dielectric material such as the surface of the element of mask 108 and masking structure 128, can carry out the plasma etching based on fluorine chemistry agent.In one embodiment, CVD equipment 100 is plasma enhanced chemical vapor deposition (PECVD) equipment.During the cleaning based on plasma, masking structure 128 is placed on protuberance 130, and mask 108 is placed in alignment member 168, substrate 140 is removed from CVD equipment 100 simultaneously.The surface of mask 108 is exposed to fluoro free radical, and described fluoro free radical etches away the lip-deep dielectric accumulation that is placed in mask 108.
Fig. 2 is according to the top view of the mask 108 of an execution mode of the present utility model.Mask 108 has the main body of being made up of dilval, and described dilval has low thermal coefficient of expansion.In one embodiment, iron-nickel alloy has 36.5% nickel and 63.5% iron.Can will add dilval to such as other elements of cobalt and/or chromium to form the main body of mask 108.In one embodiment, add 5% cobalt to dilval.In another embodiment, add 11% cobalt and chromium to dilval.The main body of mask 108 has the thickness (to the direction in paper) of approximately 100 microns.Mask 108 has multiple openings 202.During processing substrate, multiple devices can be formed on single substrate.In field of display, multiple display screens can be formed on large glass substrate.In one embodiment, glass substrate has the length of width and the 92cm of 73cm.Substrate can be greatly to having the width of 220cm and the length of 250cm or larger size.Mask 108 is slightly larger than substrate.In one embodiment, mask 108 has the length of width and the 90cm of 80cm.In Fig. 2, width is to be to be represented by " L " by " W " expression and length.In another embodiment, mask 108 has the length of width and the 144cm of 92.5cm.Substrate shape is not limited to rectangle.The large I of each opening 202 is corresponding to the size of the display screen of the multiple display screens that form on next comfortable substrate.The size of the opening 202 in mask 108 and the number of opening 202 according to by manufacture product and difference.For example, compared with large tv display screen manufacture, the large I number less and opening 202 of the opening 202 of display screen of mobile telephone in manufacturing can be more.In one embodiment, in mask 108, there is 80cm × 90cm opening 202 of 60.As shown in Figure 2, opening 202 is rectangles.But opening 202 is not limited to rectangular shape.
During operation, after deposition cycle many times, mask 108 can be exposed to containing fluoro plasma, so that the material being deposited on mask 108 can be removed.Tradition on mask 108
coating is to etch away by fluoro free radical during cleaning, and every mask 108 3 hours again can be coated with or abandon.In order to extend the service time of described mask 108 before need to being again coated with, use such as Fe
3o
4or Y
2o
3oxide coatings mask 108.Such as Fe
3o
4or Y
2o
3the oxide coating of coating than such as
polymer there is better plasma resistance.By using oxide coating, increase by one times the service time of mask 108.In one embodiment, extended to 6 hours from 3 hours service time.Because the whole surface of mask 108 may be exposed to fluoro free radical during cleaning, so the whole surface-coated of mask 108 has oxide.Coating layer thickness is from the range of approximately 1 micron to approximately 10 microns.Having the surface of the mask 108 of oxide coating can be smooth and can have and be less than or equal to 0.8 micron, such as the surface roughness between 0.3 micron and 0.8 micron (Ra).Oxide coating on mask 108 can have be arranged in described mask 108 under the identical surface reflection of dilval material.In one embodiment, there is the surface of the mask 108 of oxide coating to have approximately 12% and the about glossiness between 14%.The case hardness with the mask 108 of oxide coating can be between 300Hv to 500Hv.Can be used for processing the surface of the mask 108 with oxide coating such as the method for bead or sandblast.In one embodiment, there is Fe
3o
4the mask 108 of coating has grey or black.
Various coating processes are used on mask 108 and form oxide coating.In one embodiment, use three step coating processes to form Fe on the mask 108 being made by dilval
3o
4coating.At step 1 place, by the surface oxidation of mask 108 to form iron oxide (II) (Fe
2o
3) layer.At step 2 place, by mask 108 immerse NaOH bathe among to carry out dissolution process.At step 3 place, the layer on mask 108 is reduced to form Fe
3o
4coating.The temperature of bathing at the NaOH during dissolving step can be between 100 degrees Celsius and 140 degrees Celsius, such as between 115 degrees Celsius and 120 degrees Celsius.Be less than 100 degrees Celsius and can cause Fe with the temperature that is greater than 140 degrees Celsius
3o
4the surperficial spheroidizing of coating and rough.
In a word, the utility model discloses the mask using at the CVD chamber of processing for OLED.Mask is by being coated with Fe
3o
4or Y
2o
3dilval make.Oxide coating improves plasma resistance, and while being exposed to the cleaning agent such as fluoro free radical with convenient mask, can extend the service time of mask.
Although aforementioned content is for execution mode of the present utility model, but can in the situation that not deviating from base region of the present utility model, design other and further execution mode of the present utility model, and scope of the present utility model is to be determined by described claims.
Claims (11)
1. for a mask for Organic Light Emitting Diode processing, it is characterized in that, comprising:
Dilval body; And
Iron oxide (III) or yttria coating.
2. mask as claimed in claim 1, wherein said iron oxide (III) coating has from the roughness scope of approximately 0.3 micron to approximately 0.8 micron.
3. mask as claimed in claim 1, wherein said mask is for thin-film package technique.
4. mask as claimed in claim 1, wherein said iron oxide (III) coating is grey.
5. mask as claimed in claim 1, further comprises the multiple openings that are formed in described mask.
6. mask as claimed in claim 5 wherein forms 60 openings in described mask.
7. mask as claimed in claim 1, wherein said iron oxide (III) coating has from the thickness range of approximately 1 micron to approximately 10 microns.
8. mask as claimed in claim 1, wherein said mask has the length of about 90cm and the width of about 80cm.
9. mask as claimed in claim 1, wherein said mask has the length of about 144cm and the width of about 92.5cm.
10. mask as claimed in claim 1, the described dilval body of wherein said mask has the thickness of approximately 100 microns.
11. masks as claimed in claim 1, the whole surface-coated of wherein said dilval body has iron oxide (III) or yittrium oxide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261702660P | 2012-09-18 | 2012-09-18 | |
| US61/702,660 | 2012-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203932122U true CN203932122U (en) | 2014-11-05 |
Family
ID=51827886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320582101.5U Expired - Fee Related CN203932122U (en) | 2012-09-18 | 2013-09-18 | For the mask of Organic Light Emitting Diode processing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203932122U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107451520A (en) * | 2017-04-05 | 2017-12-08 | 王开安 | The preparation method of ultrasonic fingerprint recognizer component electrode pattern |
| JP6387198B1 (en) * | 2017-04-14 | 2018-09-05 | 堺ディスプレイプロダクト株式会社 | Manufacturing method and manufacturing apparatus for organic EL display device |
| JP2018181852A (en) * | 2018-05-24 | 2018-11-15 | 堺ディスプレイプロダクト株式会社 | Method and device for manufacturing organic el display device |
| CN108866477A (en) * | 2018-07-06 | 2018-11-23 | 京东方科技集团股份有限公司 | Evaporation mask, manufacturing method thereof, evaporation device and evaporation method |
| CN109219897A (en) * | 2016-05-24 | 2019-01-15 | 应用材料公司 | Shadow mask with plasma resistant coating |
-
2013
- 2013-09-18 CN CN201320582101.5U patent/CN203932122U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109219897A (en) * | 2016-05-24 | 2019-01-15 | 应用材料公司 | Shadow mask with plasma resistant coating |
| US11566322B2 (en) | 2016-05-24 | 2023-01-31 | Applied Materials, Inc. | Shadow mask with plasma resistant coating |
| CN107451520A (en) * | 2017-04-05 | 2017-12-08 | 王开安 | The preparation method of ultrasonic fingerprint recognizer component electrode pattern |
| JP6387198B1 (en) * | 2017-04-14 | 2018-09-05 | 堺ディスプレイプロダクト株式会社 | Manufacturing method and manufacturing apparatus for organic EL display device |
| WO2018189906A1 (en) * | 2017-04-14 | 2018-10-18 | 堺ディスプレイプロダクト株式会社 | Production method and production device for organic el display device |
| US10886468B2 (en) | 2017-04-14 | 2021-01-05 | Sakai Display Products Corporation | Manufacturing method and manufacturing apparatus for organic EL display device |
| JP2018181852A (en) * | 2018-05-24 | 2018-11-15 | 堺ディスプレイプロダクト株式会社 | Method and device for manufacturing organic el display device |
| CN108866477A (en) * | 2018-07-06 | 2018-11-23 | 京东方科技集团股份有限公司 | Evaporation mask, manufacturing method thereof, evaporation device and evaporation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20190918 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |