CN104891428A - Three-axis anisotropic magnetic reluctance manufacturing method - Google Patents
Three-axis anisotropic magnetic reluctance manufacturing method Download PDFInfo
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- CN104891428A CN104891428A CN201510189317.9A CN201510189317A CN104891428A CN 104891428 A CN104891428 A CN 104891428A CN 201510189317 A CN201510189317 A CN 201510189317A CN 104891428 A CN104891428 A CN 104891428A
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Abstract
The present invention provides a three-axis anisotropic magnetic reluctance manufacturing method, which comprises: providing a substrate; sequentially forming a nickel-iron layer, a tantalum nitride layer and a silicon nitride layer on the substrate; carrying out photoetching and etching on the silicon nitride layer so as to form a patterned hard mask layer; carrying out ashing on the three-axis anisotropic magnetic reluctance forming the patterned hard mask layer; and etching the tantalum nitride layer by using the patterned hard mask layer so as to form the groove. According to the three-axis anisotropic magnetic reluctance manufacturing method of the present invention, the ashing process is used to remove the resist so as to avoid the polymer generation due to the reaction of the resist and the tantalum nitride layer during the subsequent etching process, such that the etching increase for removing the polymer is not required during the subsequent etching, and the etching uniformity is good; and the ion beam etching process with excellent etching uniformity is used during the tantalum nitride layer etching, such that the uniformity of the etching retaining thickness of the tantalum nitride layer is good so as to improve the yield stability of the three-axis anisotropic magnetic reluctance.
Description
Technical field
The present invention relates to micro-electromechanical system field, particularly a kind of manufacture method of three axle anisotropic magnetoresistives.
Background technology
MEMS (Micro-Electro-Mechanical Systems, being called for short MEMS) technology is a new and high technology of high speed development in recent years, the MEMS utilizing MEMS technology to make is the microdevice or the microsystem that micro parts, microsensor, micro actuator and corresponding treatment circuit are integrated in an integral unit, and size is usually in micron (micro) level or nanometer (nanotechnology) level.
Wherein, three axle anisotropic magnetoresistives (3D-AMR) are the anisotropic magnetoresistive (AMR that one utilizes ferronickel (NiFe) material, anisotropic magneto resistive) effect manufacture MEMS (AMR MEMS), it is highly sensitive, Heat stability is good, the cost of material is low, and preparation technology is simple, is widely used.
Please refer to Fig. 1, it is the structural representation of three axle anisotropic magnetoresistives of prior art.As shown in Figure 1, existing three axle anisotropic magnetoresistives 100 comprise substrate 10, be formed at the nifesphere 12 on described substrate 10, be formed at the tantalum nitride layer 14 on described nifesphere 12, be formed at the silicon nitride layer 16 on described tantalum nitride layer 14, and be formed at the groove 18 in described silicon nitride layer 16 and tantalum nitride layer 14.
The technical process making described three axle anisotropic magnetoresistives 100 is as follows: first, provides a substrate 11, and described substrate 10 is formed nifesphere 12, tantalum nitride layer 14 and silicon nitride layer 16 successively; Then, described silicon nitride layer 16 is coated with photoresist (not shown) and photoetching and etching are carried out to described silicon nitride layer 16; Subsequently, be that hard mask etches described tantalum nitride layer 14 with the silicon nitride layer after etching, to form groove 18, reserve part tantalum nitride layer 14 under described groove 18; Finally, photoresist is removed by ashing and wet-cleaning.Wherein, tantalum nitride etching is generally realized by silicon nitride over etching.That is, tantalum nitride etching and silicon nitride etch complete in same technique, and tantalum nitride etching is identical with the process conditions of silicon nitride etch.
Please continue to refer to Fig. 1, the thickness d of the tantalum nitride layer 14 retained under described groove 18, namely the etching remaining thickness of described tantalum nitride layer 14 is very crucial for the yield of described three axle anisotropic magnetoresistives 100, therefore needs to carry out strict management and control.
But, in actual manufacture process, find the etching remaining thickness of described tantalum nitride layer 14 and uneven, make the yield of existing three axle anisotropic magnetoresistives 100 unstable.In order to improve the yield stability of three axle anisotropic magnetoresistives, those skilled in the art are finding always and are causing described tantalum nitride layer 14 to etch the uneven reason of remaining thickness and solution thereof.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of three axle anisotropic magnetoresistives, uneven with the etching remaining thickness solving tantalum nitride layer in existing three axle anisotropic magnetoresistives, cause the problem of the yield poor stability of three axle anisotropic magnetoresistives.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of three axle anisotropic magnetoresistives, the manufacture method of described three axle anisotropic magnetoresistives comprises:
One substrate is provided;
Form nifesphere, tantalum nitride layer and silicon nitride layer successively over the substrate;
Photoetching is carried out to described silicon nitride layer and etches to form patterned hard mask layer;
Ashing is carried out to the three axle anisotropic magnetoresistives forming patterned hard mask layer; And
Described patterned hard mask layer is utilized to etch to form groove to described tantalum nitride layer.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, the thickness range of described nifesphere is between 100 dusts to 300 dusts.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, the original thickness of described tantalum nitride layer is between 500 dusts to 1500 dusts, and the final thickness of described tantalum nitride layer is between 300 dusts to 1300 dusts.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, the thickness range of described silicon nitride layer is between 2000 dusts to 3000 dusts.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, described silicon nitride layer is formed by chemical vapor deposition method.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, described nifesphere and tantalum nitride layer are all formed by physical gas-phase deposition.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, etching is carried out to described silicon nitride layer and adopts reactive ion etching process.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, only physical method is used to the etching technics that described tantalum nitride layer etches.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, carry out etching to described tantalum nitride layer and adopt ion beam etch process, the gas that described ion beam etch process uses is argon gas, and the flow-control of described argon gas is between 50SCCM to 150SCCM.
Optionally, in the manufacture method of three described axle anisotropic magnetoresistives, the etch rate of described ion beam etch process is 400 A/min of clocks.
In the manufacture method of three axle anisotropic magnetoresistives provided by the invention, photoresist is removed by cineration technics, photoresist is avoided to react with tantalum nitride in subsequent etching process and produce polymer, therefore not only etch amount need not be strengthened in order to remove polymer during subsequent etching, and etching homogeneity is better, further, the ion beam etch process adopting etching homogeneity more excellent when carrying out tantalum nitride layer etching, make the uniformity of the etching remaining thickness of tantalum nitride layer better, which thereby enhance the yield stability of three axle anisotropic magnetoresistives.
Accompanying drawing explanation
Fig. 1 is the structural representation of three axle anisotropic magnetoresistives of prior art;
Fig. 2 is the process chart of the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention;
Fig. 3 is the structural representation of the device in the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention after completing steps one;
Fig. 4 is the structural representation of the device in the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention after completing steps two;
Fig. 5 is the structural representation of the device in the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention after completing steps three;
Fig. 6 is the structural representation of the device in the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention after completing steps four;
Fig. 7 is the structural representation of the device in the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention after completing steps five.
Detailed description of the invention
Be described in further detail below in conjunction with the manufacture method of the drawings and specific embodiments to the three axle anisotropic magnetoresistives that the present invention proposes.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
In existing three axle anisotropic magnetoresistives, the etching remaining thickness of tantalum nitride layer is uneven, causes product yield unstable.Inventor is to this has been deep research, find to cause the uneven reason of the etching remaining thickness of tantalum nitride layer in existing three axle anisotropic magnetoresistives to be, carry out etch rate when tantalum nitride layer etches uneven, in the manufacture process of existing three axle anisotropic magnetoresistives, tantalum nitride layer is etched and usually adopts reactive ion etching (RIE) technique, reactive ion etching (RIE) is although the etch rate of technique is very fast, uneven.Such as, the etching apparatus (AMAT DPS Metal) adopted at present, the inhomogeneities of its etch rate just reaches 15%.Therefore, easily there is uneven thickness phenomenon after the etch in described tantalum nitride layer 14.
Meanwhile, polymer can be produced in reactive ion etching (RIE) technical process.As shown in Figure 1, because the photoresist on silicon nitride layer 16 is not also removed when etching tantalum nitride layer 14, photoresist can and tantalum nitride and etching gas (CF4) can chemical reaction be there is, thus generation polymer.In order to avoid there is polymer residue problem on the surface of described tantalum nitride layer 14, generally need to strengthen etch amount, and strengthen etch amount not only make the uniformity of the etching remaining thickness d of described tantalum nitride layer 14 be more difficult to control, and easily form defect (pit) on the surface of described tantalum nitride layer 14, thus adverse effect is caused to product yield.
To sum up, the reason causing existing three axle anisotropic magnetoresistives to be difficult to the etching remaining thickness controlling tantalum nitride layer is in the fabrication process, etch rate is uneven and must strengthen etch amount when etching, and makes the etching remaining thickness of tantalum nitride layer uneven.In order to solve the problem, present applicant proposes following technical scheme:
Please refer to Fig. 2, it is the process chart of the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention.As shown in Figure 2, the manufacture method of three axle anisotropic magnetoresistives of the embodiment of the present invention comprises:
Step one a: substrate is provided;
Step 2: form nifesphere, tantalum nitride layer and silicon nitride layer successively over the substrate;
Step 3: photoetching is carried out to described silicon nitride layer and etches to form patterned hard mask layer;
Step 4: ashing is carried out to the three axle anisotropic magnetoresistives forming patterned hard mask layer;
Step 5: utilize described patterned hard mask layer to etch to form groove to described tantalum nitride layer.
Below in conjunction with specific embodiments and the drawings, the present invention will be described in detail.
First, as shown in Figure 3, a substrate 20 is provided.Described substrate 20 can be the Semiconductor substrate such as the silicon (SOI) on N-type substrate, P type substrate, insulating barrier.
Then, as shown in Figure 4, on described substrate 20, nifesphere 22 is formed by physical vapour deposition (PVD) (PVD) technique, physical vapour deposition (PVD) (PVD) technique is adopted to form tantalum nitride layer 24 equally on nifesphere 22 after forming nifesphere 22, adopt chemical vapour deposition (CVD) (CVD) technique to form silicon nitride layer 26 on tantalum nitride layer 24 after forming tantalum nitride layer 24, now the thickness d 1 of described tantalum nitride layer 24 is original thicknesses of described tantalum nitride layer 24.
Preferably, the thickness range of described nifesphere 22 is between 100 dusts to 300 dusts, and the thickness range of described silicon nitride layer 26 is between 2000 dusts to 3000 dusts, and the original thickness of described tantalum nitride layer 24 is between 500 dusts to 1500 dusts.
In the present embodiment, the thickness of described nifesphere 22 is 230 dusts, and the thickness of described tantalum nitride layer 24 is 900 dusts, and the thickness of described silicon nitride layer 26 is 2000 dusts.
Then, described silicon nitride layer 26 be coated with photoresist 27 and carry out photoetching, etching to form patterned hard mask layer to described silicon nitride layer 26 after photoetching.As shown in Figure 5, after carrying out silicon nitride etch, define etching window 26a in described silicon nitride layer 26, the bottom-exposed of described etching window 26a goes out described tantalum nitride layer 24.
In the present embodiment, to described silicon nitride layer 26 carry out etch adopt be existing reactive ion etching (RIE) technique.
Afterwards, as shown in Figure 6, ashing is carried out to the three axle anisotropic magnetoresistives forming patterned hard mask layer, thus remove photoresist 27.Remove photoresist 27 by cineration technics can avoid photoresist and tantalum nitride generation chemical reaction in subsequent etching process and produce polymer, and then avoid the surface of described tantalum nitride layer 24 to occur polymer residue or pit problem.And, remove photoresist 27 to avoid producing polymer by cineration technics, follow-up etching can be made more even, thus be more prone to the etching remaining thickness controlling described tantalum nitride layer 24.
After completing ashing, described patterned hard mask layer is utilized to etch described tantalum nitride layer 24.As shown in Figure 7, after etching, form groove 28 in described tantalum nitride layer 24, reserve part tantalum nitride layer 24 under described groove 28, the thickness d 2 of the tantalum nitride layer 24 retained under described groove 28 is etching remaining thickness of described tantalum nitride layer 24.
As everyone knows, so-called etching refers to from the film of silicon chip or substrate surface and removes portion of material to form the process of figure, and etching technics adopts chemical method, physical method or uses the method for chemistry and physics to remove part thin-film material selectively simultaneously.Require only to adopt physical method to the etching technics that described tantalum nitride layer 24 etches, namely there is no chemical reaction in etching process.
In the present embodiment, to described tantalum nitride layer 24 carry out etch adopt be existing ion beam etching (IBE) technique, the gas that described ion beam etching (IBE) technique uses is argon gas (Ar), the flow-control of argon gas (Ar) is between 50SCCM to 150SCCM, and etch rate is 400 A/min of clocks.Adopt ion beam etching (IBE) technique not only can improve etching homogeneity, described tantalum nitride layer 24 is avoided to occur uneven thickness phenomenon after the etch, and be a kind of pure physical process due to it, therefore, it is possible to avoid the polymer caused because of chemical reaction to deposit (polymer re-deposition) phenomenon again, thus the surface of described tantalum nitride layer 24 is avoided to occur polymer residue or pit problem.
Finally, various residue is removed by ashing and wet clean process.
So far, define three axle anisotropic magnetoresistives 200, in described three axle anisotropic magnetoresistives 200, the etching remaining thickness general control of tantalum nitride layer 24 is between 300 dusts to 1300 dusts.
From the above, the manufacture method of the three axle anisotropic magnetoresistives adopting the embodiment of the present invention to provide not only can control the uniformity of the etching remaining thickness of described tantalum nitride layer 24, ensure the yield stability of three axle anisotropic magnetoresistives, and the surface of described tantalum nitride layer 24 can be avoided to occur residue or pit problem, improve the performance of device further.
To sum up, in the manufacture method of the three axle anisotropic magnetoresistives provided in the embodiment of the present invention, photoresist is removed by cineration technics, photoresist is avoided to react with tantalum nitride in subsequent etching process and produce polymer, therefore not only etch amount need not be strengthened in order to remove polymer during subsequent etching, and etching homogeneity is better, further, the ion beam etch process adopting etching homogeneity more excellent when carrying out tantalum nitride layer etching, make the uniformity of the etching remaining thickness of tantalum nitride layer better, which thereby enhance the yield stability of three axle anisotropic magnetoresistives.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (10)
1. a manufacture method for three axle anisotropic magnetoresistives, is characterized in that, comprising:
One substrate is provided;
Form nifesphere, tantalum nitride layer and silicon nitride layer successively over the substrate;
Photoetching is carried out to described silicon nitride layer and etches to form patterned hard mask layer;
Ashing is carried out to the three axle anisotropic magnetoresistives forming patterned hard mask layer; And
Described patterned hard mask layer is utilized to etch to form groove to described tantalum nitride layer.
2. the manufacture method of MEMS device as claimed in claim 1, it is characterized in that, the thickness range of described nifesphere is between 100 dusts to 300 dusts.
3. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, is characterized in that, the original thickness of described tantalum nitride layer is between 500 dusts to 1500 dusts, and the final thickness of described tantalum nitride layer is between 300 dusts to 1300 dusts.
4. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, is characterized in that, the thickness range of described silicon nitride layer is between 2000 dusts to 3000 dusts.
5. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, it is characterized in that, described silicon nitride layer is formed by chemical vapor deposition method.
6. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, it is characterized in that, described nifesphere and tantalum nitride layer are all formed by physical gas-phase deposition.
7. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, is characterized in that, carries out etching adopt reactive ion etching process to described silicon nitride layer.
8. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, is characterized in that, only use physical method to the etching technics that described tantalum nitride layer etches.
9. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 8, it is characterized in that, carry out etching to described tantalum nitride layer and adopt ion beam etch process, the gas that described ion beam etch process uses is argon gas, and the flow-control of described argon gas is between 50SCCM to 150SCCM.
10. the manufacture method of three axle anisotropic magnetoresistives as claimed in claim 1, is characterized in that, the etch rate of described ion beam etch process is 400 A/min of clocks.
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| CN201510189317.9A CN104891428A (en) | 2015-04-17 | 2015-04-17 | Three-axis anisotropic magnetic reluctance manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620037A (en) * | 2019-09-12 | 2019-12-27 | 上海华力集成电路制造有限公司 | Metal hard mask and manufacturing and using methods thereof |
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