CN103420329A - TaN etching polymer residue removing method used for MEMS technology - Google Patents
TaN etching polymer residue removing method used for MEMS technology Download PDFInfo
- Publication number
- CN103420329A CN103420329A CN2013103863323A CN201310386332A CN103420329A CN 103420329 A CN103420329 A CN 103420329A CN 2013103863323 A CN2013103863323 A CN 2013103863323A CN 201310386332 A CN201310386332 A CN 201310386332A CN 103420329 A CN103420329 A CN 103420329A
- Authority
- CN
- China
- Prior art keywords
- tan
- ashing
- polymer
- removal method
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a TaN etching polymer residue removing method used for a MEMS technology. The method includes the steps that a light-resistance mask is used for etching a TaN film layer to form contact holes, and a TaN polymer can be formed on the surface of the light-resistance mask; the mixed gas of CF4 and O2 is used for carrying out ashing treatment at the temperature of 85 DEG C, so that the TaN polymer, difficult to remove, on the light-resistance mask and the light-resistance mask are partially removed; O2 is used for carrying out ashing treatment at the temperature of 85 DEG C, so that the light-resistance mask is completely removed; the mixed gas of CF4 and O2 is used for carrying out ashing treatment at the temperature of 85 DEG C, so that the remaining TaN polymer is removed, and a C type polymer is introduced in; O2 is used for carrying out ashing treatment at the temperature of 85 DEG C, so that the C type polymer 400 is removed; wet method cleaning is carried out to remove the polymer and the remaining light-resistance mask.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of etch polymers of the TaN for MEMS technique residue removal method.
Background technology
MEMS (MEMS, Micro-Electro-Mechanical Systems) is a kind of industrial technology that microelectric technique and mechanical engineering are fused together, and its opereating specification is in micrometer range.
In MEMS technique, in etching tantalum nitride (TaN), the effect due to bombardment, produce more polymer, and these polymer buildup are around the sidewall of opening.Form and deposit again (re-deposition) effect.
Fig. 1 schematically shows the flow chart according to the etch polymers of the TaN for the MEMS technique residue removal method of prior art.
Specifically, as shown in Figure 1, according to the etch polymers of the TaN for the MEMS technique residue removal method of prior art, comprise:
Utilize photo-resistive mask to carry out etching to form contact hole (step S10) to TaN, for example, can adopt conventional lithographic method to carry out the etching contact hole.Wherein, mask protection is the position of etching not, etches away the position of coming out;
Utilize CF under 85 degrees centigrade
4And O
2Mist carry out ashing processing (step S20);
Subsequently, utilize O under 85 degrees centigrade
2Gas carries out ashing processing (step S30);
Subsequently, utilize O under 250 degrees centigrade
2Gas carries out ashing processing (step S40);
Finally, carry out wet-cleaning, remove polymer and residual photo-resistive mask (step S50);
But this method is unsatisfactory for the removal effect of polymer, and Ta, C, O unit prime component is difficult to remove.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of etch polymers of the TaN for the MEMS technique residue removal method that can effectively remove polymer and can effectively remove Ta, C, O unit prime component is provided.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of etch polymers of the TaN for MEMS technique residue removal method, it comprises:
First step: utilize photo-resistive mask to carry out etching to form contact hole to the TaN rete, wherein on the photo-resistive mask surface, can form the TaN base polymer;
Second step: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, with the TaN base polymer of partly removing the more difficult removal of photoresistance surface ratio and partly remove photo-resistive mask;
Third step: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove photo-resistive mask fully;
The 4th step: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, in order to remove remaining TaN base polymer, wherein introduced the C base polymer;
The 5th step: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove C base polymer 400;
The 6th step: carry out wet-cleaning, remove polymer and residual photo-resistive mask.
Preferably, CF in second step
4And O
2Gas volume than for 40:1500.
Preferably, CF in the 4th step
4And O
2Gas volume than for 40:1500.
Preferably, the power that in second step, ashing is processed is between 200 to 400W.
Preferably, the power that in third step, ashing is processed is between 200 to 400W.
Preferably, the power that in the 4th step, ashing is processed is between 200 to 400W.
Preferably, the power that in the 5th step, ashing is processed is between 200 to 400W.
Thus, the invention provides a kind of etch polymers of the TaN for the MEMS technique residue removal method that can effectively remove polymer and can effectively remove Ta, C, O unit prime component; And, wherein without carrying out the such high temperature of prior art (250 degrees centigrade) ashing, process, and the power of cineration technics can be lower, reduced technological requirement.
The accompanying drawing explanation
By reference to the accompanying drawings, and, by reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the flow chart according to the etch polymers of the TaN for the MEMS technique residue removal method of prior art.
Fig. 2 schematically shows according to the preferred embodiment of the invention the flow chart for the TaN etch polymers residue removal method of MEMS technique.
Fig. 3 to Fig. 6 schematically shows according to the present invention the schematic diagram for each step of the TaN etch polymers residue removal method of MEMS technique.
It should be noted that, accompanying drawing is for the present invention is described, and unrestricted the present invention.Note, the accompanying drawing that means structure may not be to draw in proportion.And, in accompanying drawing, identical or similar element indicates identical or similar label.
The specific embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 2 schematically shows according to the preferred embodiment of the invention the flow chart for the TaN etch polymers residue removal method of MEMS technique.
Specifically, as shown in Figure 2, the TaN etch polymers residue removal method for MEMS technique comprises according to the preferred embodiment of the invention:
First step S1: utilize 200 pairs of TaN retes of photo-resistive mask 100 to carry out etching to form contact hole, now on photo-resistive mask 200 surfaces, can form TaN base polymer 300; As shown in Figure 3,
For example, can adopt conventional lithographic method to carry out the etching contact hole.Wherein, mask protection is the position of etching not, etches away the position of coming out.
Second step S2: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, with the TaN base polymer 300 of partly removing the more difficult removal of photoresistance surface ratio and partly remove photo-resistive mask 200; As shown in Figure 4, TaN base polymer 300 is removed in a large number;
Wherein, preferably, CF in second step S2
4And O
2Gas volume than for 40:1500.
Preferably, the power that in second step S2, ashing is processed is between 200 to 400W.
Third step S3: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove photo-resistive mask 200 fully, as shown in Figure 5;
Preferably, the power that in third step S3, ashing is processed is between 200 to 400W.
The 4th step S4: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, in order to remove remaining TaN base polymer 300, wherein introduced C(carbon) base polymer 400, as shown in Figure 6.
Preferably, the power that in the 4th step S4, ashing is processed is between 200 to 400W.
Wherein, preferably, CF in the 4th step S4
4And O
2Gas volume than for 40:1500.
The 5th step S5: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove C base polymer 400.
Preferably, the power that in the 5th step S5, ashing is processed is between 200 to 400W.
The 6th step S6: carry out wet-cleaning, remove polymer and residual photo-resistive mask.
Thus, the above embodiment of the present invention provides a kind of etch polymers of the TaN for the MEMS technique residue removal method that can effectively remove polymer and can effectively remove Ta, C, O unit prime component; And, wherein without carrying out the such high temperature of prior art (250 degrees centigrade) ashing, process, and the power of cineration technics can be lower, reduced technological requirement.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as the term in specification " first ", " second ", " the 3rd " are only for each assembly of distinguishing specification, element, step etc., rather than for meaning logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (7)
1. the etch polymers of the TaN for a MEMS technique residue removal method is characterized in that comprising:
First step: utilize photo-resistive mask to carry out etching to form contact hole to the TaN rete, wherein on the photo-resistive mask surface, can form the TaN base polymer;
Second step: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, with the TaN base polymer of partly removing the more difficult removal of photoresistance surface ratio and partly remove photo-resistive mask;
Third step: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove photo-resistive mask fully;
The 4th step: under 85 degrees centigrade, utilize CF
4And O
2Mist carry out the ashing processing, in order to remove remaining TaN base polymer, wherein introduced the C base polymer;
The 5th step: under 85 degrees centigrade, utilize O
2Gas carries out the ashing processing, in order to remove C base polymer 400;
The 6th step: carry out wet-cleaning, remove polymer and residual photo-resistive mask.
2. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1, is characterized in that CF in second step
4And O
2Gas volume than for 40:1500.
3. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1 and 2, is characterized in that CF in the 4th step
4And O
2Gas volume than for 40:1500.
4. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1 and 2, is characterized in that, the power that in second step, ashing is processed is between 200 to 400W.
5. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1 and 2, is characterized in that, the power that in third step, ashing is processed is between 200 to 400W.
6. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1 and 2, is characterized in that, the power that in the 4th step, ashing is processed is between 200 to 400W.
7. the etch polymers of the TaN for MEMS technique residue removal method according to claim 1 and 2, is characterized in that, the power that in the 5th step, ashing is processed is between 200 to 400W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310386332.3A CN103420329B (en) | 2013-08-29 | 2013-08-29 | For the TaN etch polymers residue removal method of MEMS technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310386332.3A CN103420329B (en) | 2013-08-29 | 2013-08-29 | For the TaN etch polymers residue removal method of MEMS technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103420329A true CN103420329A (en) | 2013-12-04 |
| CN103420329B CN103420329B (en) | 2016-03-23 |
Family
ID=49645781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310386332.3A Active CN103420329B (en) | 2013-08-29 | 2013-08-29 | For the TaN etch polymers residue removal method of MEMS technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103420329B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730351A (en) * | 2014-01-07 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | Post-etching ashing method and forming method of magnetic sensor |
| CN103738914A (en) * | 2014-01-09 | 2014-04-23 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of micro-electromechanical system (MEMS) apparatus |
| CN103964374A (en) * | 2014-03-17 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor |
| CN104671196A (en) * | 2015-01-31 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Etching method of tantalum nitride |
| CN105174208A (en) * | 2015-08-11 | 2015-12-23 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing MEMS device |
| CN107808822A (en) * | 2017-09-29 | 2018-03-16 | 上海华虹宏力半导体制造有限公司 | The lithographic method of contact hole |
| CN109160487A (en) * | 2018-08-14 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of tri- axis AMR magnetometric sensor of MEMS |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130166A (en) * | 1999-02-01 | 2000-10-10 | Vlsi Technology, Inc. | Alternative plasma chemistry for enhanced photoresist removal |
| TW428245B (en) * | 1999-06-04 | 2001-04-01 | United Microelectronics Corp | Method for cleaning via on the semiconductor wafer |
| US6228739B1 (en) * | 1998-05-15 | 2001-05-08 | Samsung Electronics Co., Ltd. | Pre-treatment method performed on a semiconductor structure before forming hemi-spherical grains of capacitor storage node |
| TW449830B (en) * | 2000-06-14 | 2001-08-11 | United Microelectronics Corp | Method for cleaning semiconductor wafer |
| US20050048786A1 (en) * | 2003-09-01 | 2005-03-03 | Jo Bo Yeoun | Methods of manufacturing semiconductor devices having capacitors |
| US20060141776A1 (en) * | 2004-12-28 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method of manufacturing a semiconductor device |
| CN1866477A (en) * | 2005-05-18 | 2006-11-22 | 联华电子股份有限公司 | Method for removing etching residue on wafer surface |
| US7334317B2 (en) * | 2005-06-06 | 2008-02-26 | Infineon Technologies Ag | Method of forming magnetoresistive junctions in manufacturing MRAM cells |
| CN101144973A (en) * | 2006-09-15 | 2008-03-19 | 应用材料股份有限公司 | Method of etching extreme ultraviolet light photomasks |
| TWI315092B (en) * | 2003-01-28 | 2009-09-21 | United Microelectronics Corp | |
| CN101656208A (en) * | 2009-09-25 | 2010-02-24 | 中国科学院微电子研究所 | Method for selectively removing TaN metal gate electrode layer |
| CN101894750A (en) * | 2010-05-28 | 2010-11-24 | 上海集成电路研发中心有限公司 | Method for carrying out dry etching on TaN electrode |
| KR101100758B1 (en) * | 2005-10-31 | 2011-12-30 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device |
-
2013
- 2013-08-29 CN CN201310386332.3A patent/CN103420329B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6228739B1 (en) * | 1998-05-15 | 2001-05-08 | Samsung Electronics Co., Ltd. | Pre-treatment method performed on a semiconductor structure before forming hemi-spherical grains of capacitor storage node |
| US6130166A (en) * | 1999-02-01 | 2000-10-10 | Vlsi Technology, Inc. | Alternative plasma chemistry for enhanced photoresist removal |
| TW428245B (en) * | 1999-06-04 | 2001-04-01 | United Microelectronics Corp | Method for cleaning via on the semiconductor wafer |
| TW449830B (en) * | 2000-06-14 | 2001-08-11 | United Microelectronics Corp | Method for cleaning semiconductor wafer |
| TWI315092B (en) * | 2003-01-28 | 2009-09-21 | United Microelectronics Corp | |
| US20050048786A1 (en) * | 2003-09-01 | 2005-03-03 | Jo Bo Yeoun | Methods of manufacturing semiconductor devices having capacitors |
| US20060141776A1 (en) * | 2004-12-28 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method of manufacturing a semiconductor device |
| CN1866477A (en) * | 2005-05-18 | 2006-11-22 | 联华电子股份有限公司 | Method for removing etching residue on wafer surface |
| US7334317B2 (en) * | 2005-06-06 | 2008-02-26 | Infineon Technologies Ag | Method of forming magnetoresistive junctions in manufacturing MRAM cells |
| KR101100758B1 (en) * | 2005-10-31 | 2011-12-30 | 매그나칩 반도체 유한회사 | Method for manufacturing semiconductor device |
| CN101144973A (en) * | 2006-09-15 | 2008-03-19 | 应用材料股份有限公司 | Method of etching extreme ultraviolet light photomasks |
| CN101656208A (en) * | 2009-09-25 | 2010-02-24 | 中国科学院微电子研究所 | Method for selectively removing TaN metal gate electrode layer |
| CN101894750A (en) * | 2010-05-28 | 2010-11-24 | 上海集成电路研发中心有限公司 | Method for carrying out dry etching on TaN electrode |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730351A (en) * | 2014-01-07 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | Post-etching ashing method and forming method of magnetic sensor |
| CN103738914A (en) * | 2014-01-09 | 2014-04-23 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of micro-electromechanical system (MEMS) apparatus |
| CN103738914B (en) * | 2014-01-09 | 2016-01-20 | 上海华虹宏力半导体制造有限公司 | The manufacture method of MEMS |
| CN103964374A (en) * | 2014-03-17 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor |
| CN103964374B (en) * | 2014-03-17 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | A kind of method of the deposited polymer again removing MEMS sensor |
| CN104671196A (en) * | 2015-01-31 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Etching method of tantalum nitride |
| CN105174208A (en) * | 2015-08-11 | 2015-12-23 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing MEMS device |
| CN107808822A (en) * | 2017-09-29 | 2018-03-16 | 上海华虹宏力半导体制造有限公司 | The lithographic method of contact hole |
| CN109160487A (en) * | 2018-08-14 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of tri- axis AMR magnetometric sensor of MEMS |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103420329B (en) | 2016-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103420329A (en) | TaN etching polymer residue removing method used for MEMS technology | |
| KR20120112652A (en) | Method and apparatus for pattern collapse free wet processing of semiconductor devices | |
| WO2019060184A3 (en) | Improved fill material to mitigate pattern collapse | |
| US9478439B2 (en) | Substrate etching method | |
| CN101958275B (en) | Contact hole forming method | |
| CN103050434A (en) | Through silicon via etching method | |
| CN103424998B (en) | The method removing photoresist in microelectromechanical-systems manufacturing process after polyimides etching | |
| TWI521314B (en) | Processing liquid for restraining pattern collapse of metal microscopic structure and manufacturing method of metal microscopic structure using the same | |
| CN102361007A (en) | Method for etching groove and semiconductor device | |
| GB2523435A (en) | Method for producing a structured surface | |
| CN108962921B (en) | Semiconductor device and method for manufacturing the same | |
| CN105513949B (en) | The method for forming carbon substrate articulamentum | |
| CN102969275B (en) | Manufacture method of contact hole | |
| CN103964374B (en) | A kind of method of the deposited polymer again removing MEMS sensor | |
| US20120286402A1 (en) | Protuberant structure and method for making the same | |
| TW201714205A (en) | Method of forming deep trench and deep isolation structure | |
| KR100836505B1 (en) | Method of etching semiconduct's insulating layer | |
| JP2011029422A (en) | Coating composition for protective film for high level difference substrate | |
| JP6019609B2 (en) | Manufacturing method of semiconductor device | |
| US20150228537A1 (en) | Contact Critical Dimension Control | |
| EP3316281A1 (en) | Method of structuring a semiconductor device without pattern collapse | |
| KR101347149B1 (en) | Method using dry and wet combination process for fabricating inp gunn diodes | |
| CN103972051B (en) | A kind of aluminum etching preliminary processes method eliminating crystal edge particle residue | |
| CN104882374B (en) | Lithographic method and etching constituent | |
| CN102569022A (en) | Cleaning method after tungsten chemical-mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |