CN101894750A - Method for carrying out dry etching on TaN electrode - Google Patents

Method for carrying out dry etching on TaN electrode Download PDF

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CN101894750A
CN101894750A CN2010101875407A CN201010187540A CN101894750A CN 101894750 A CN101894750 A CN 101894750A CN 2010101875407 A CN2010101875407 A CN 2010101875407A CN 201010187540 A CN201010187540 A CN 201010187540A CN 101894750 A CN101894750 A CN 101894750A
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etching
tan
method
dry etching
plasma
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CN2010101875407A
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姜利军
李全波
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上海集成电路研发中心有限公司;浙江大立科技股份有限公司
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Priority to CN2010101875407A priority Critical patent/CN101894750A/en
Publication of CN101894750A publication Critical patent/CN101894750A/en

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Abstract

The invention provides a method for carrying out dry etching on a TaN electrode. In the method, the F-containing gases are adopted to carry out dry etching on the TaN electrode and include CF4, CHF3 and Ar. CF4 and CHF3 serve as the sources of the F free radical with chemical function of plasma etching and Ar has the functions of diluting and bombarding. The conditions meeting the actual production requirements can be obtained by refining the process parameters. The method has the following advantages: the pressure and temperature limitation and gas selection range for etching TaN are broken through; the gases for etching are expanded from Cl gases to the gases with F as the major part under low temperature; and the types of equipment capable of etching the TaN electrode are increased.

Description

干法刻蚀TaN电极的方法 Dry etching the TaN electrode method

技术领域 FIELD

[0001] 本发明涉及集成电路制造工艺技术领域,特别涉及到电容耦合等离子体刻蚀设备低压低温度下TaN电极干法(等离子体)刻蚀方法。 [0001] Technical Field The present invention relates to integrated circuit manufacturing process, particularly to an etching method of a capacitively coupled plasma etching apparatus at a low temperature low pressure TaN electrode dry (plasma).

背景技术 Background technique

[0002] 随着集成电路制造技术的不断发展,TaN材料应用也越来越广,主要有三个方面: 第一,铜互连材料阻挡层,铜互连层主要由TaN/Ta/Cu层构成,TaN层具有良好铜扩散阻挡作用和较佳的介质层接触性能;第二为TaN金属栅应用,尤其对于65nm及其下技术代,由于具有良好的热稳定性及与高K值(high-k)材料匹配性好,TaN常被用来作为栅金属材料; 第三,微机电系统MEMS电极材料。 [0002] With the development of integrated circuit manufacturing technology, TaN material is applied more widely, there are three main aspects: First, a barrier layer of copper interconnect material, copper interconnect layer consists essentially of TaN / Ta / Cu layer , TaN diffusion barrier layer has a good effect of the copper and the dielectric layer in contact with preferred performance; TaN metal gate for the second application, and particularly for the 65nm technology generation because of the good thermal stability and high K (High- k) the material good match, TaN often used as a gate metal material; third, a microelectromechanical system (MEMS) electrode material. 对于铜阻挡层材料TaN,由于采取大马士镶嵌结构,不需要移除TaN,故对TaN刻蚀无要求。 TaN barrier layer for copper material, thanks to Damas damascene structure, without removing TaN, TaN etch so the No. 而对电极材料,因为要形成电极,则必须将不需要的TaN 移除即刻蚀掉。 While the electrode material to be formed as an electrode, it must remove the unnecessary TaN i.e. etched away. 由于等离子体(干法)刻蚀相对于湿法刻蚀因为具有各向异性,在TaN精细图案转移方面几乎占优势地位。 Since the plasma (dry) etching with respect to the anisotropic wet etch because almost dominant in the transfer of a fine pattern TaN. 等离子体主刻蚀气体为含卤素气体,主要为F,Cl,Br等, 由于Ta的卤化物具有较低的挥发性,故刻蚀难度挑战比较大。 Plasma etching the primary gas is a halogen-containing gas, mainly F, Cl, Br, etc., since Ta halide having lower volatility, so that etching is relatively large difficult challenge.

[0003] 目前常用的刻蚀设备主要有电容耦合和电感耦合两种。 [0003] etching equipment currently used mainly two kinds of capacitive coupling and inductive coupling. 其中电容耦合为中密度等离子体,一般没有顶部(上)功率源,而电感耦合则一般至少具备源极功率(source power) 和偏置功率(bias power)两个,分别控制等离子密度和能量,能更精细控制调整工艺参数。 Wherein the capacitive coupling to the plasma density, generally do not (on) the top of the power source, and the inductive coupling is generally provided with at least a source of power (source power) and bias power (bias power) two, separately control the plasma density and energy, can be adjusted finer control of the process parameters. 电容耦合等离子体CCP主要应用在介质刻蚀,而电感耦合等离子体ICP金属和硅刻蚀方面使用较多。 CCP capacitively coupled plasma etching is mainly used in the medium, and the ICP inductively coupled plasma etching of silicon metal and the use of more. TaN刻蚀一般在ICP上进行。 TaN etching is generally carried out in the ICP.

[0004] 实际生产领域目前比较成熟的干法刻蚀TaN技术采用的主要为电感耦合等离子体ICP刻蚀设备含Cl等离子体,这种技术能达到工艺要求,已被量产。 [0004] The actual production of relatively mature art dry etching techniques used mainly TaN inductively coupled plasma containing Cl ICP plasma etching apparatus, such a technique can achieve the technological requirements, have been mass production. 但必须是在具备Cl 气体的设备上才可应用或较高温环境(> 45°c )刻蚀。 But it must be equipped with a relatively high temperature before the application or etching environment (> 45 ° c) Cl gas device. 而对于低温下不含Cl气体的电容耦合等离子CCP设备(主刻蚀气体为含F类),则还没有成熟的技术方案。 For a capacitively coupled low temperature gas containing no Cl ion CCP apparatus (main etching gas containing F based), the technical solution is not mature. 刻蚀设备都有着单独的配带气体(主要为F类,Cl类,Br类气体),其中部分设备并没有携带含Cl的气体源,仅具备含F的气体和其他辅助性气体,这类设备一般刻蚀腔体温度小于20°C,这就限制TaN干法刻蚀在其之上的应用。 Have separate etching apparatus equipped with the gas (mostly Class F, Class Cl, Br-based gas), and wherein the portion of the device does not carry a Cl-containing gas source, and only the other gas comprising F-containing auxiliary gas, such Usually etching apparatus chamber temperature of less than 20 ° C, which limits the application of dry etching TaN above it.

发明内容 SUMMARY

[0005] 本发明的目的是开发出电容耦合等离子体设备低压低温度下一种新的干法刻蚀TaN的方法。 [0005] The object of the present invention is to develop a capacitively coupled plasma at a low pressure low temperature apparatus a new method of etching TaN dry. 这种方法主要含有F的气体,不再含有Cl类气体,通过细化工艺参数,得出满足生产实际需求的条件。 This method is primarily a gas containing F, not containing Cl-based gas by refining the process parameters, obtained actual production conditions demand.

[0006] 为了达到上述目的,本发明提出一种干法刻蚀TaN电极的方法,该方法采用含F气体对所述TaN电极进行干法刻蚀,所述含F气体包括CF4,CHF3和Ar三种气体。 [0006] To achieve the above object, the present invention proposes a method of dry etching a TaN electrode method which uses the F-containing gas dry etching TaN electrodes, the F-containing gas comprises CF4, CHF3 and Ar three gases.

[0007] 进一步的,该方法采用电容耦合等离子刻蚀设备,其中,该电容耦合等离子刻蚀设备采用等离子体。 [0007] Further, the method uses a capacitively coupled plasma etching apparatus, wherein the capacitively coupled plasma etching apparatus using plasma.

[0008] 进一步的,所述电容耦合等离子刻蚀设备的刻蚀腔体壁及下电极温度为IO0C -25"C。 [0008] Further, etching of the cavity walls capacitively coupled plasma etching apparatus and a lower electrode temperature IO0C -25 "C.

[0009] 进一步的,所述等离子体产生方式为电容耦合,所述等离子体的源极功率与偏置功率为同一个功率源。 [0009] Further, the plasma is generated capacitively coupled manner, the plasma source power and bias power for the same power source.

[0010] 进一步的,所述电容耦合等离子刻蚀设备的刻蚀腔体内压力为10-30mt。 [0010] Further, the pressure in the etch chamber capacitively coupled plasma etching apparatus as 10-30mt.

[0011] 进一步的,所述等离子体的功率为200w-400w。 [0011] Further, the plasma power is 200w-400w.

[0012] 进一步的,所述CF4的流量为50-100sccm,所述CHF3的流量为10_40sccm,所述Ar 的流量为200-400sccm。 [0012] Further, the flow rate of 50-100 seem CF4, CHF3 flow rate of the 10_40sccm, the Ar flow rate is 200-400sccm.

[0013] 本发明提出一种电容耦合等离子体设备低压低温度下一种新的干法刻蚀TaN的方法,其优点在于本发明通过细化工艺参数,能够得出满足生产实际需求的条件。 [0013] The present invention provides a capacitive coupled plasma method under a low temperature low-pressure apparatus a new dry etching of TaN, which is advantageous in that by refining the process parameters of the invention, the production conditions can be derived actual demand. 突破刻蚀TaN的压力温度限制和气体选择范围,低温下刻蚀气体从Cl类扩展到以F为主的气体,增加TaN电极可刻蚀的设备类型。 Breakthrough etch TaN pressure and temperature limits the choice of gas, the etching gas from a low temperature to extend to class F Cl based gas, increasing the device type electrode may be etched TaN.

附图说明 BRIEF DESCRIPTION

[0014] 图1所示为膜层结构且光刻定义图案后的示意图; [0014] Figure 1 is a schematic view of the film structure and a lithographically-defined pattern;

[0015] 图2所示为抗反射层刻蚀完后的示意图; [0015] FIG. 2 is a schematic view after etching the anti-reflective layer;

[0016] 图3所示为TaN刻蚀后的示意图; To etch TaN schematic view of the [0016] Figure 3;

[0017] 图4所示为光阻去除后的示意图。 As shown in [0017] FIG. 4 is a schematic view of the resist is removed.

具体实施方式 Detailed ways

[0018] 为了更了解本发明的技术内容,特举具体实施例并配合所附图式说明如下。 [0018] In order to better understand the technical content of the present invention, several specific embodiments with the accompanying drawings and described below.

[0019] 本发明的目的是开发出电容耦合等离子体设备低压低温度下一种新的干法刻蚀TaN的方法。 [0019] The object of the present invention is to develop a capacitively coupled plasma at a low pressure low temperature apparatus a new method of etching TaN dry. 这种方法主要含有F的气体,不再含有Cl类气体,通过细化工艺参数,得出满足生产实际需求的条件。 This method is primarily a gas containing F, not containing Cl-based gas by refining the process parameters, obtained actual production conditions demand.

[0020] 请参考图1,图1所示为膜层结构且光刻定义图案后的示意图。 [0020] Please refer to FIG 1, FIG. 1 is a schematic view of the film structure and lithographically-defined pattern. 在芯片基材1上依次淀积TaN层2,抗反射层3,光阻4,并光刻定义出需要转移的图案。 Sequentially depositing on the chip substrate 1 TaN layer 2, the antireflection layer 3, a photoresist 4, and photolithography to define the desired pattern transfer. 接着将光刻好的芯片传入刻蚀腔体,放置于下电极之上。 The chip is then passed good lithographic etching chamber, placed over the lower electrode. 然后干法刻蚀TaN层2之上的抗反射层3。 And then dry etching the TaN layer over the antireflection layer 3 2. 之后就是进行干法刻蚀TaN层2,含F的气体可选CF4和CHF3两种气体,辅助性气体则为Ar。 After the dry etching is a TaN layer 2, F-containing gas of CF4 and CHF3 optionally two gases, the auxiliary gas was Ar. 气体CF4和CHF3作为等离子体刻蚀化学作用F自由基的来源,Ar则作为携带性气体并在等离子体中提供物理轰击作用的正离子。 CF4 gas and CHF3 F source of free radicals, Ar and provide the positive ion bombardment in the plasma physical plasma etching as a chemical action as a carrying gas. 刻蚀设备需含有CF4,CHF3和Ar气体,典型刻蚀速率为400A/min到800A/min,刻蚀时间依据膜厚而定。 For an etching apparatus comprising CF4, CHF3 and Ar gas, the etch rate is typically 400A / min to 800A / min, the etching time according to a given film thickness. 最后去除光租4,取出芯片。 Finally, removal of light rent 4, remove the chip.

[0021] 本发明提出的干法刻蚀TaN电极的方法,该方法采用含F气体对所述TaN电极进行干法刻蚀,所述含F气体包括CF4,CHF3和Ar三种气体。 [0021] The method of dry etching TaN electrode made according to the present invention, the method of using the F-containing gas dry etching TaN electrodes, the F-containing gas comprises CF4, CHF3 and Ar three gases.

[0022] 进一步的,所述CF4的流量为50-100sccm,所述CHF3的流量为10_40sccm,所述Ar 的流量为200-400sCCm。 [0022] Further, the flow rate of 50-100 seem CF4, CHF3 flow rate of the 10_40sccm, the Ar flow rate is 200-400sCCm. 该方法采用电容耦合等离子刻蚀设备,其中,该电容耦合等离子刻蚀设备采用等离子体。 The method uses a capacitively coupled plasma etching apparatus, wherein the capacitively coupled plasma etching apparatus using plasma. 所述等离子体产生方式为电容耦合,所述等离子体的源极功率与偏置功率为同一个功率源。 The capacitively coupled plasma generation mode, the plasma source power and bias power for the same power source.

[0023] 进一步的,所述电容耦合等离子刻蚀设备的刻蚀腔体内压力为10_30mt。 [0023] Further, the pressure in the etch chamber capacitively coupled plasma etching apparatus as 10_30mt. 所述电容耦合等离子刻蚀设备的刻蚀腔体壁及下电极温度为10°c -25°c。 Etching the cavity wall capacitively coupled plasma etching apparatus and a lower electrode temperature of 10 ° c -25 ° c. 所述等离子体的功率为200w-400w,利用在此工艺条件下反应产物的较佳挥发性刻蚀TaN层2。 The plasma power is 200w-400w, the TaN layer is etched using the preferred volatile reaction products under the conditions of this process 2. [0024] 经过实验,电容耦合等离子刻蚀设备(如AMAT EMAX)上500A TaN干法刻蚀,腔体壁及下电极温度设定成15°C,可以选取CF4流量为70sCCm,CHF3流量为20sCCm,Ar流量为250SCCm,刻蚀腔体内压力35mt,等离子体功率350w,刻蚀时间约90s。 [0024] After the experiment, a capacitively coupled plasma etching apparatus (e.g. AMAT EMAX) 500A TaN dry etching, the cavity wall and the lower electrode temperature was set to 15 ° C, CF4 flow rate can be selected as 70sCCm, CHF3 flow 20sCCm , Ar flow rate of 250 sccm, an etching pressure chamber 35mt, plasma power 350w, the etching time of about 90s. 经过测试,实验结果符合集成工艺要求。 After testing, the experimental results in line with the integration process requirements.

[0025] 综上所述,本发明通过细化工艺参数,能够得出满足生产实际需求的条件。 [0025] In summary, the present invention is refined by the process parameters can be derived actual production conditions demand. 优点在于突破刻蚀TaN的压力温度限制和气体选择范围,低温下刻蚀气体从Cl类扩展到以F为主的气体,增加TaN电极可刻蚀的设备类型。 Breakthrough etch TaN advantage that the pressure and temperature limits the choice of gas, the etching gas from a low temperature to extend to class F Cl based gas, increasing the device type electrode may be etched TaN.

[0026] 虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明。 [0026] While the present invention has been disclosed above by the preferred embodiments, they are not intended to limit the present invention. 本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。 Technical Field The present invention pertains having ordinary knowledge in the present invention without departing from the spirit and scope, may make various modifications and variations. 因此,本发明的保护范围当视权利要求书所界定者为准。 Accordingly, the scope of the present invention when the book following claims and their equivalents.

Claims (7)

  1. 一种干法刻蚀TaN电极的方法,其特征在于,该方法采用含F气体对所述TaN电极进行干法刻蚀,所述含F气体包括CF4,CHF3和Ar三种气体。 The method of etching the TaN electrode a dry method, wherein the method uses the F-containing gas dry etching TaN electrodes, the F-containing gas comprises CF4, CHF3 and Ar three gases.
  2. 2.根据权利要求1所述的干法刻蚀TaN电极的方法,其特征在于,该方法采用电容耦合等离子刻蚀设备,其中,该电容耦合等离子刻蚀设备采用等离子体。 2. The method of etching the TaN electrode according to claim 1 of dry, wherein the method uses a capacitively coupled plasma etching apparatus, wherein the capacitively coupled plasma etching apparatus using plasma.
  3. 3.根据权利要求2所述的干法刻蚀TaN电极的方法,其特征在于,所述电容耦合等离子刻蚀设备的刻蚀腔体壁及下电极温度为10°c -25°c。 The dry etching TaN electrode according to claim 2, characterized in that the etching of the cavity wall capacitively coupled plasma etching apparatus and a lower electrode temperature of 10 ° c -25 ° c.
  4. 4.根据权利要求2所述的干法刻蚀TaN电极的方法,其特征在于,所述等离子体产生方式为电容耦合,所述等离子体的源极功率与偏置功率为同一个功率源。 The dry etching TaN electrode according to claim 2, characterized in that the plasma is generated capacitively coupled manner, the plasma source power and bias power for the same power source.
  5. 5.根据权利要求2所述的干法刻蚀TaN电极的方法,其特征在于,所述电容耦合等离子刻蚀设备的刻蚀腔体内压力为10-30mt。 5. The method of dry etching TaN electrode according to claim 2, characterized in that the pressure in the etch chamber capacitively coupled plasma etching apparatus as 10-30mt.
  6. 6.根据权利要求2所述的干法刻蚀TaN电极的方法,其特征在于,所述等离子体的功率为200w-400w。 6. The method of dry etching TaN electrode according to claim 2, characterized in that the plasma power is 200w-400w.
  7. 7.根据权利要求1所述的干法刻蚀TaN电极的方法,其特征在于,所述CF4的流量为50-100sccm,所述CHF3 的流量为10_40sccm,所述Ar 的流量为200_400sccm。 The dry etching TaN electrode according to claim 1, characterized in that the flow rate of 50-100 seem CF4, CHF3 flow rate of the 10_40sccm, the Ar flow rate is 200_400sccm.
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CN103420329A (en) * 2013-08-29 2013-12-04 上海宏力半导体制造有限公司 TaN etching polymer residue removing method used for MEMS technology
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CN103700623A (en) * 2014-01-07 2014-04-02 上海华虹宏力半导体制造有限公司 Etching method of TaN and forming method of magnetic sensor
CN103700623B (en) * 2014-01-07 2016-09-28 上海华虹宏力半导体制造有限公司 Tantalum nitride etching method, a method of forming the magnetic sensor
CN106356297A (en) * 2015-07-16 2017-01-25 中微半导体设备(上海)有限公司 Etching method of tantalum nitride TaN film

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