CN104671196A - Etching method of tantalum nitride - Google Patents
Etching method of tantalum nitride Download PDFInfo
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- CN104671196A CN104671196A CN201510052254.2A CN201510052254A CN104671196A CN 104671196 A CN104671196 A CN 104671196A CN 201510052254 A CN201510052254 A CN 201510052254A CN 104671196 A CN104671196 A CN 104671196A
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Abstract
The invention provides an etching method of tantalum nitride. The etching method is characterized in that a patterned photoresist layer is adopted as a mask film, after the step for partially etching a silicon nitride layer is carried out, an ashing step is additionally carried out on the photoresist layer on the surface of the silicon nitride layer, and the ashing step is used for removing the photoresist layer, so that the problem that the surface of the tantalum nitride layer is rough as a polymer which is difficult to remove is generated by the reaction of photoresist and the tantalum nitride when the tantalum nitride layer is etched by adopting the photoresist layer as the mask film in the prior art can be avoided, and the performance of a manufactured MEMS sensor can be improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of lithographic method of tantalum nitride.
Background technology
Microelectromechanical systems Micro Electro Mechanical Systems, MEMS sensor is by formation silicon-on-insulator Silicon On Insulator, and the silicon substrate of SOI substrate carries out microfabrication to form movable electrode portion and fixed electrode portion.Described trickle sensor, by the action in movable electrode portion, can be used as acceleration sensor, pressure sensor, oscillation gyro, or midget relay etc. uses.Wherein, in the manufacturing process of MEMS sensor, tantalum nitride is a kind of conventional conductive material and mask material.
The lithographic method of existing tantalum nitride comprises the steps:
Substrate is provided, forms tantalum nitride layer at described substrate surface, form silicon nitride layer on described tantalum nitride layer surface, form the photoresist layer of patterning on described silicon nitride layer surface;
With the photoresist layer of described patterning for mask, described silicon nitride layer is etched;
With the photoresist layer of described patterning for mask, partial etching is carried out to described tantalum nitride layer.
Please refer to Fig. 1, it is the SEM collection of illustrative plates on its surface after the existing technique etch nitride tantalum layer of employing.The surface of tantalum nitride layer is more coarse as shown in Figure 1, this is because the tantalum nitride layer surface after utilizing existing technique etch nitride tantalum to etch occurs being difficult to by the etching of routine or stripping technology the polymer removed, and this polymer can cause the coarse of tantalum nitride layer surface, cause the problem of the MEMS sensor hydraulic performance decline manufactured.
Summary of the invention
The object of the present invention is to provide a kind of lithographic method of tantalum nitride, existing technique etch nitride tantalum is used to solve, tantalum nitride layer surface after etching occurs being difficult to by the etching of routine or stripping technology the polymer removed, and this polymer can cause tantalum nitride layer rough surface, cause the problem of the MEMS sensor hydraulic performance decline manufactured.
For solving the problems of the technologies described above, the invention provides a kind of lithographic method of tantalum nitride, the lithographic method of described tantalum nitride comprises the following steps:
There is provided substrate, described substrate surface is formed with the photoresist layer of tantalum nitride layer, silicon nitride layer and patterning successively;
With the photoresist layer of described patterning for mask, partial etching is carried out to described silicon nitride layer;
After partial etching completes, cineration technics is carried out to the photoresist layer on described silicon nitride layer surface;
Described silicon nitride layer after partial etching is etched, and exposes the tantalum nitride layer that described silicon nitride layer to carry out after partial etching below it;
Be hard mask with remaining silicon nitride layer, partial etching is carried out to the tantalum nitride layer exposed.
Optionally, in the lithographic method of described tantalum nitride, after described silicon nitride layer carries out partial etching, the thickness of remaining nitride silicon layer is
Optionally, in the lithographic method of described tantalum nitride, after described tantalum nitride layer carries out partial etching, the thickness of remaining nitride tantalum layer is
Optionally, in the lithographic method of described tantalum nitride, the temperature of described cineration technics is 80 DEG C ~ 150 DEG C.
Optionally, in the lithographic method of described tantalum nitride, the podzolic gas of described cineration technics comprises oxygen and fluorine-containing etching gas.
Optionally, in the lithographic method of described tantalum nitride, described fluorine-containing etching gas is CF
4, C
2f
6, C
4f
8, CHF
3, one or more in SF6.
Optionally, in the lithographic method of described tantalum nitride, the flow of described oxygen is 1000ml/min ~ 3000ml/min.
Optionally, in the lithographic method of described tantalum nitride, the flow of described fluorine-containing etching gas is 10ml/min ~ 100ml/min.
In the lithographic method of tantalum nitride provided by the present invention, with the photoresist layer of patterning for mask, the step of the photoresist layer on described silicon nitride layer surface being carried out to cineration technics is with the addition of after described silicon nitride layer being carried out to the step of partial etching, this step object removes photoresist layer, when avoiding being mask etching tantalum nitride layer with photoresist layer in existing technique, photoresist can react with tantalum nitride and generate the coarse problem that the polymer being difficult to remove causes tantalum nitride layer surface, thus provides the MEMS sensor performance of manufacture.
Accompanying drawing explanation
Fig. 1 is the SEM collection of illustrative plates on its surface after the existing technique etch nitride tantalum layer of employing;
Fig. 2 is the flow chart of the method for etch nitride tantalum in one embodiment of the invention;
Fig. 3 a ~ 3e is the generalized section of each step in the lithographic method of tantalum nitride in one embodiment of the invention;
Fig. 4 is the SEM collection of illustrative plates on tantalum nitride layer surface after the lithographic method adopting tantalum nitride of the present invention.
Detailed description of the invention
Be described in further detail below in conjunction with the lithographic method of the drawings and specific embodiments to the tantalum nitride that the present invention proposes.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 2, the flow chart of the method for etch nitride tantalum in one embodiment of the invention, as shown in Figure 2, the method for described etch nitride tantalum comprises the following steps:
First, please refer to Fig. 3 a, perform step S1, provide substrate 10, described substrate 10 surface is formed with the photoresist layer 13 of tantalum nitride layer 11, silicon nitride layer 12 and patterning successively.
Then, please refer to Fig. 3 b, perform step S2, with the photoresist layer 13 of described patterning for mask, partial etching is carried out to described silicon nitride layer 12; Wherein, after described silicon nitride layer 12 carries out partial etching, the thickness of remaining nitride silicon layer 12 is
here remaining silicon nitride layer 12 is covered in the effect that isolation is played on tantalum nitride layer 11 surface, to react generation polymer to avoid photoresist and tantalum nitride.
Then, please refer to Fig. 3 c, perform step S3, after partial etching completes, cineration technics is carried out to the photoresist layer 13 on described silicon nitride layer 12 surface; Wherein, the temperature of described cineration technics is 80 DEG C ~ 150 DEG C; The podzolic gas of described cineration technics comprises oxygen and fluorine-containing etching gas.
Further, described fluorine-containing etching gas is CF
4, C
2f
6, C
4f
8, CHF
3, one or more in SF6, the flow of described fluorine-containing etching gas is 10ml/min ~ 100ml/min.Preferably, the flow of described oxygen is 1000ml/min ~ 3000ml/min.
Concrete, the existence of step S3 is one of reactant in order to remove generation polymer i.e. photoresist, follow-up tantalum nitride is etched time, there is no photoresist, polymer would not be produced, consider and remove the halfway situation of photoresist, adopt partial etching during etch nitride silicon layer 12 before removing photoresist, and not all etching, that is now tantalum nitride layer 11 surface coverage has the silicon nitride layer 12 after partial etching, the generation of the situation therefore avoiding the photoresist that remains and the tantalum nitride below it to react, lay the foundation for stopping to produce polymer further.
Then, please refer to Fig. 3 d, perform step S4, the described silicon nitride layer 12 after partial etching is etched, and expose the tantalum nitride layer 11 that described silicon nitride layer 12 to carry out after partial etching below it.Here the described silicon nitride layer 12 after partial etching is being carried out to the isotropic dry etching of etching employing, while isotropic dry etching is carried out to silicon nitride layer 12, also the photoresist residuing in silicon nitride layer 12 surface is together etched away, avoid residual photoresist and tantalum nitride layer 11 reacts the chance producing polymer.
Then, please refer to Fig. 3 e, performing step S5, is hard mask with remaining silicon nitride layer 12, carries out partial etching to the tantalum nitride layer 11 exposed.Wherein, after described tantalum nitride layer 11 carries out partial etching, the thickness of remaining nitride tantalum layer 11 is
Silicon nitride layer 12 is selected to carry out partial etching as hard mask to described tantalum nitride layer 11, avoid and adopt existing technique etch nitride tantalum layer 11 to adopt photoresist layer 13 to there will be the carbon in photoresist as mask and the tantalum in tantalum nitride reacts the phenomenon generating and be difficult to polymer, thus make tantalum nitride surface comparatively clean, smooth, improve manufactured MEMS sensor performance.
Please refer to Fig. 4, it is the SEM collection of illustrative plates on tantalum nitride layer surface after the lithographic method adopting tantalum nitride of the present invention.After Fig. 4 and Fig. 1 being contrasted the lithographic method of visible employing tantalum nitride of the present invention, tantalum nitride layer 11 surface is comparatively level and smooth.
To sum up, in the lithographic method of tantalum nitride provided by the present invention, with the photoresist layer of patterning for mask, the step of the photoresist layer on described silicon nitride layer surface being carried out to cineration technics is with the addition of after described silicon nitride layer being carried out to the step of partial etching, this step object removes photoresist layer, when avoiding being mask etching tantalum nitride layer with photoresist layer in existing technique, photoresist can react with tantalum nitride and generate the coarse problem that the polymer being difficult to remove causes tantalum nitride layer surface, thus provides the MEMS sensor performance of manufacture.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (8)
1. a lithographic method for tantalum nitride, is characterized in that, comprises the following steps:
There is provided substrate, described substrate surface is formed with the photoresist layer of tantalum nitride layer, silicon nitride layer and patterning successively;
With the photoresist layer of described patterning for mask, partial etching is carried out to described silicon nitride layer;
After partial etching completes, cineration technics is carried out to the photoresist layer on described silicon nitride layer surface;
Described silicon nitride layer after partial etching is etched, and exposes the tantalum nitride layer that described silicon nitride layer to carry out after partial etching below it;
Be hard mask with remaining silicon nitride layer, partial etching is carried out to the tantalum nitride layer exposed.
2. the lithographic method of tantalum nitride as claimed in claim 1, it is characterized in that, after described silicon nitride layer carries out partial etching, the thickness of remaining nitride silicon layer is
3. the lithographic method of tantalum nitride as claimed in claim 1, it is characterized in that, after described tantalum nitride layer carries out partial etching, the thickness of remaining nitride tantalum layer is
4. the lithographic method of tantalum nitride as claimed in claim 1, it is characterized in that, the temperature of described cineration technics is 80 DEG C ~ 150 DEG C.
5. the lithographic method of tantalum nitride as claimed in claim 4, it is characterized in that, the podzolic gas of described cineration technics comprises oxygen and fluorine-containing etching gas.
6. the lithographic method of tantalum nitride as claimed in claim 5, it is characterized in that, described fluorine-containing etching gas is CF
4, C
2f
6, C
4f
8, CHF
3, one or more in SF6.
7. the lithographic method of tantalum nitride as claimed in claim 5, it is characterized in that, the flow of described oxygen is 1000ml/min ~ 3000ml/min.
8. the lithographic method of tantalum nitride as claimed in claim 5, it is characterized in that, the flow of described fluorine-containing etching gas is 10ml/min ~ 100ml/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510052254.2A CN104671196A (en) | 2015-01-31 | 2015-01-31 | Etching method of tantalum nitride |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510052254.2A CN104671196A (en) | 2015-01-31 | 2015-01-31 | Etching method of tantalum nitride |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060189134A1 (en) * | 2005-02-24 | 2006-08-24 | International Business Machines Corporation | Ta-TaN selective removal process for integrated device fabrication |
| CN103420329A (en) * | 2013-08-29 | 2013-12-04 | 上海宏力半导体制造有限公司 | TaN etching polymer residue removing method used for MEMS technology |
| CN103738914A (en) * | 2014-01-09 | 2014-04-23 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of micro-electromechanical system (MEMS) apparatus |
| CN103832968A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of MEMS (micro-electro-mechanical system) device |
| CN103964374A (en) * | 2014-03-17 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor |
-
2015
- 2015-01-31 CN CN201510052254.2A patent/CN104671196A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060189134A1 (en) * | 2005-02-24 | 2006-08-24 | International Business Machines Corporation | Ta-TaN selective removal process for integrated device fabrication |
| CN103420329A (en) * | 2013-08-29 | 2013-12-04 | 上海宏力半导体制造有限公司 | TaN etching polymer residue removing method used for MEMS technology |
| CN103738914A (en) * | 2014-01-09 | 2014-04-23 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of micro-electromechanical system (MEMS) apparatus |
| CN103832968A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of MEMS (micro-electro-mechanical system) device |
| CN103964374A (en) * | 2014-03-17 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor |
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