CN103138710A - Connecting method of wafer and base and obtained crystal resonator - Google Patents
Connecting method of wafer and base and obtained crystal resonator Download PDFInfo
- Publication number
- CN103138710A CN103138710A CN2011103767914A CN201110376791A CN103138710A CN 103138710 A CN103138710 A CN 103138710A CN 2011103767914 A CN2011103767914 A CN 2011103767914A CN 201110376791 A CN201110376791 A CN 201110376791A CN 103138710 A CN103138710 A CN 103138710A
- Authority
- CN
- China
- Prior art keywords
- wafer
- electrode
- reed
- resonator
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a connecting method of a wafer and a base and an obtained crystal resonator and relates to the technical field of crystal elements. The method includes: a film plating process is adopted to enable an electrode to be plated on the wafer; a eutectic welding process is adopted to enable the electrode to be welded to a reed of the base to form the resonator; and conductive adhesive is supplemented at the connecting position of the electrode and the reed. The connecting method of the wafer and the base and the crystal resonator obtained by using the method adopt gold-tin soldering and the conductive adhesive to connect the wafer and the base simultaneously, are stable in structure, can effectively avoid risks caused by using of the conductive adhesive only, and effectively improve long-term electric performance reliability of the crystal elements.
Description
Technical field
The present invention relates to the crystal element and device technical field, particularly the method for attachment of a kind of wafer and pedestal and gained crystal resonator.
Background technology
The application of quartz crystal components and parts is very extensive these years, is used for the fields such as communication, computer, household electrical appliance, radar navigation set, and there is the application of quartz-crystal resonator in every place of using digital signal.The advantages such as nowadays the technique connected mode of quartz crystal components and parts all adopts the connected mode of conductive adhesive, and the curing temperature of conducting resinl is low, and is easy to operate become its widely used major reason.
Yet the intrinsic shortcoming (oxide etch, crack and layering, creep and defective workmanship etc.) of conducting resinl has also affected its reliability, becomes the main cause that conducting resinl lost efficacy.Therefore the present fields such as space flight and aviation are very high for the reliability requirement of product, only can not satisfy now the demand in high-tech, highly reliable field with the technique of conducting resinl.
Be in contact with one another the formation conductive path between the conducting particles in conducting resinl, make conducting resinl have conductivity, in glue-line, interparticle stable contact forms after conducting resinl solidifies or be dry.Conducting resinl is before curing or drying, and conducting particles separates existence in adhesive, there is no each other Continuous Contact, thereby is in state of insulation; Conducting resinl solidify or drying after, cause the contraction of adhesive volume due to the curing of the volatilization of solvent and viscose agent, make conducting particles mutually be stable continuous state, thereby show conductivity.
The creep of conducting resinl, namely when temperature surpassed the glass transformation temperature of polymer, polymer deformation increased.Due to conducting resinl generation creep or distortion, the metallic that originally was in contact with one another may be pulled open, cause resistance to become large; Simultaneously can form larger shear stress at the bonding interface place, and produce thermal mechanical fatigue, thereby make conducting resinl produce the phenomenons such as crack or layering.Conducting resinl is rotten, and conducting powder layering, skewness occur, thereby make regional area the cavity occur without the conducting resinl phenomenon, cause thermal resistance to increase, and then may cause inefficacy or the inaccuracy of integrated circuit.
Summary of the invention
The technical problem that (one) will solve
The technical problem to be solved in the present invention is: how method of attachment and the gained crystal resonator of a kind of wafer and pedestal are provided, overcoming the hidden danger of quality that only brings with conducting resinl, thereby improve the long-term electrical property reliability of crystal element and device.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides the method for attachment of a kind of wafer and pedestal, it comprises step:
B: adopt coating process that electrode is plated on wafer;
C: adopt the eutectic Welding that the reed of described electrode with pedestal welded mutually, form resonator;
D: the junction at described electrode and described reed replenishes conducting resinl.
Preferably, described step B specifically comprises step:
B1: clean described wafer;
B2: the positive and negative at described wafer plates the first coating;
B3: the positive and negative in the marginal portion of described the first coating plates and adds thickness coating, described the first coating and add thickness coating and consist of described electrode.
Preferably, described step C specifically comprises step:
C1: clean weld tabs, described wafer and reed;
C2: the marginal portion of described the above electrode of wafer is stretched in the groove of described reed;
C3: described weld tabs is filled in the gap of described electrode and reed;
C4: described wafer and pedestal integral body are put into the eutectic brazier weld.
Preferably, described step D specifically comprises step:
D1: clean described resonator;
D2: in the junction of described electrode and described reed, and at the side place coated with conductive glue of described reed away from described electrode;
D3: described resonator is put into continuous tunnel furnace bake glue.
Preferably, also comprised step: A before described step B: prepare weld tabs, and described wafer and pedestal.
Preferably, also comprise step e after described step D: described resonator is finely tuned to the preset frequency point.
Preferably, also comprise step F after described step e: described resonator is carried out press seal.
Preferably, in described step B, adopt evaporating coating machine or sputter coating machine, described electrode is plated on described wafer.
Preferably, in described step C, adopt golden soldering sheet that the reed of described electrode with pedestal welded mutually.
The present invention also provides a kind of described method to make the crystal resonator of gained, and described resonator comprises wafer and base; The tow sides of described wafer are coated with electrode; Described base comprises reed; Weld mutually with the groove of described reed the marginal portion of described electrode; At the weld of described electrode and described reed, and be coated with conductive adhesive layer at described reed away from a side place of described electrode.
(3) beneficial effect
The method of attachment of wafer of the present invention and pedestal and the crystal resonator that adopts the method to obtain, adopting simultaneously golden soldering to be connected described wafer with conducting resinl connects with pedestal, structure is more stable, can effectively avoid the risk of only using conducting resinl to bring, effectively improve the long-term electrical property reliability of crystal element and device.
Description of drawings
Fig. 1 is the method for attachment flow chart of the described wafer of the embodiment of the present invention and pedestal;
Fig. 2 to Fig. 6 is the method for attachment technical process schematic diagram of the described wafer of the embodiment of the present invention and pedestal.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for explanation the present invention, but are not used for limiting the scope of the invention.
Fig. 1 is the method for attachment flow chart of the described wafer of the embodiment of the present invention and pedestal; Fig. 2 to Fig. 6 is the method for attachment technical process schematic diagram of the described wafer of the embodiment of the present invention and pedestal.Referring to Fig. 1 to Fig. 6, described method comprises:
Steps A: prepare weld tabs, and described wafer 100 and pedestal.Referring to Fig. 2, described wafer 100 adopts quartz wafer; Described weld tabs adopts golden soldering sheet; Described base adopts gold-plated base.
Step B: adopt coating process, use evaporating coating machine or sputter coating machine that described electrode is plated on described wafer 100.
Described step B specifically comprises step:
Step B1: clean described wafer 100.
Step B2: use evaporating coating machine or sputter coating machine, plate simultaneously the first coating 201 at the positive and negative of described wafer 100.Referring to Fig. 3, through after the plated film for the first time of described step B2, described the first coating 201 is coated on the tow sides of described wafer 100 simultaneously.But, once plate film formed coating thinner, if directly carry out the eutectic weldering, easily produce the corrosion phenomenon, described electrode is damaged.
Step B3: use evaporating coating machine or sputter coating machine, the positive and negative in the marginal portion of described the first coating 201 plates and adds thickness coating 202.Referring to Fig. 4, through plated film for the second time, form in the marginal portion of described the first coating 201 and add thickness coating 202, can effectively avoid described corrosion phenomenon.Described the first coating 201 and add that thickness coating 202 is common consists of described electrodes.
Step C: adopt the eutectic Welding that the reed 300 of described electrode with pedestal welded mutually, form resonator.
Described step C specifically comprises step:
Step C1: clean weld tabs, described wafer 100 and reed 300.By cleaning, make the atom of scolder and mother metal can be close to the distance of the combination that can attract each other, namely be close to the distance that atom gravitation works.
Step C2: the marginal portion of described wafer 100 the above electrode is stretched in the groove 301 of described reed 300.
Step C3: described weld tabs is filled in the gap of described electrode and reed 300, the left and right sides, the tow sides of the described electrode of every side are all filled in a described weld tabs, totally 4 described weld tabs.The described weld tabs of being filled in is positioned at the position, centre partially inboard (i.e. a side of close described electrode) of described groove 301.The length of described weld tabs is less than the length of described groove 301, and width is a bit larger tham the external diameter of described reed 300.
Step C4: described wafer 100 is put into the eutectic brazier with pedestal integral body weld.The temperature of described eutectic brazier should be a little more than the fusing point of described weld tabs.Referring to Fig. 5, through after the welding process of described step C4, inclined to one side inner side forms weld layer 400 in the centre of described groove 301.
Step D: the junction at described electrode and described reed 300 replenishes conducting resinl.
Described step D specifically comprises step:
Step D1: clean described resonator.
Step D2: in the junction of described electrode and described reed 300, and at the side place coated with conductive glue of described reed 300 away from described electrode.
Step D3: described resonator is put into continuous tunnel furnace bake glue.Referring to Fig. 6, through after described step D3, at the side formation conductive adhesive layer 500 of described reed 300 away from described electrode.
Step e: described resonator is finely tuned to the preset frequency point.
Step F: described resonator is carried out press seal.
Make the crystal resonator of gained through the described method of the embodiment of the present invention, referring to Fig. 6, described crystal resonator comprises wafer 100 and base; The tow sides of described wafer 100 are coated with electrode; Described base comprises reed 300; The groove 301 of the marginal portion of described electrode and described reed 300 welds mutually; At the weld of described electrode and described reed 300, and be coated with conductive adhesive layer 500 at described reed 300 away from a side place of described electrode.
The present embodiment is also to adopting combination technological method products obtained therefrom of the present invention, and adopt conventional conductive adhesive process products obtained therefrom to carry out the contrast_environment test, these contrast_environment tests comprise: random vibration test, shock test, temperature shock test and ageing test.Table 1 is the total result table of contrast_environment test; Table 2 is the concrete tables of data of the component environment test (random vibration test, shock test and temperature shock test) of combination process product; Table 3 is the concrete tables of data of the component environment test (random vibration test, shock test and temperature shock test) of conventional conductive adhesive process product; Table 4 is the concrete tables of data of the ageing test of two kinds of products.Wherein, ageing test adopts 85 ℃ of baking oven bakings 1 month, and criterion of acceptability is that frequency is in 1ppm.Result by above-mentioned contrast_environment test can be seen, two kinds of products are basically identical on electrical property, combination process product rate of change after environmental test is less, with respect to conducting resinl handicraft product more stable (test stone that environmental test is qualified is that frequency is no more than 20ppm, and equivalent resistance changes≤25%).What at this moment adopt due to the internal core coupling part of combination process product is the technique of metal eutectic weldering, the atom distribution characteristics of metal the phenomenon that internal structure opens circuit can not occur with the prolongation of memory time or operating time, has solved due to the existing inevitable defect problem of conducting resinl that only uses.
The total result table of table 1 contrast_environment test
The concrete tables of data of table 2 combination process product section environmental test
The concrete tables of data of table 3 conventional conductive adhesive process product section environmental test
The concrete tables of data of ageing test of two kinds of products of table 4
The method of attachment of the described wafer of the embodiment of the present invention and pedestal and the crystal resonator that adopts the method to obtain, adopting simultaneously golden soldering to be connected described wafer with conducting resinl connects with pedestal, structure is more stable, can effectively avoid the risk of only using conducting resinl to bring, effectively improve the long-term electrical property reliability of crystal element and device.
Above execution mode only is used for explanation the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. the method for attachment of a wafer and pedestal, is characterized in that, comprises step:
B: adopt coating process that electrode is plated on wafer;
C: adopt the eutectic Welding that the reed of described electrode with pedestal welded mutually, form resonator;
D: the junction at described electrode and described reed replenishes conducting resinl.
2. the method for claim 1, is characterized in that, described step B specifically comprises step:
B1: clean described wafer;
B2: the positive and negative at described wafer plates the first coating;
B3: the positive and negative in the marginal portion of described the first coating plates and adds thickness coating, described the first coating and add thickness coating and consist of described electrode.
3. the method for claim 1, is characterized in that, described step C specifically comprises step:
C1: clean weld tabs, described wafer and reed;
C2: the marginal portion of described the above electrode of wafer is stretched in the groove of described reed;
C3: described weld tabs is filled in the gap of described electrode and reed;
C4: described wafer and pedestal integral body are put into the eutectic brazier weld.
4. the method for claim 1, is characterized in that, described step D specifically comprises step:
D1: clean described resonator;
D2: in the junction of described electrode and described reed, and at the side place coated with conductive glue of described reed away from described electrode;
D3: described resonator is put into continuous tunnel furnace bake glue.
5. the method for claim 1, is characterized in that, also comprised step: A before described step B: prepare weld tabs, and described wafer and pedestal.
6. the method for claim 1, is characterized in that, also comprises step e after described step D: described resonator is finely tuned to the preset frequency point.
7. method as claimed in claim 6, is characterized in that, also comprises step F after described step e: described resonator is carried out press seal.
8. the method for claim 1, is characterized in that, in described step B, adopts evaporating coating machine or sputter coating machine, and described electrode is plated on described wafer.
9. the method for claim 1, is characterized in that, in described step C, adopts golden soldering sheet that the reed of described electrode with pedestal welded mutually.
10. the described method of one of claim 1 to 9 is made the crystal resonator of gained, it is characterized in that, described resonator comprises wafer and base; The tow sides of described wafer are coated with electrode; Described base comprises reed; Weld mutually with the groove of described reed the marginal portion of described electrode; At the weld of described electrode and described reed, and be coated with conductive adhesive layer at described reed away from a side place of described electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110376791.4A CN103138710B (en) | 2011-11-23 | 2011-11-23 | The method of attachment of wafer and pedestal and gained crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110376791.4A CN103138710B (en) | 2011-11-23 | 2011-11-23 | The method of attachment of wafer and pedestal and gained crystal resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103138710A true CN103138710A (en) | 2013-06-05 |
| CN103138710B CN103138710B (en) | 2016-01-20 |
Family
ID=48498113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110376791.4A Active CN103138710B (en) | 2011-11-23 | 2011-11-23 | The method of attachment of wafer and pedestal and gained crystal resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103138710B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450197A (en) * | 2016-01-09 | 2016-03-30 | 烟台晶英电子有限公司 | Surface-mounted quartz crystal resonator and processing process thereof |
| CN107508570A (en) * | 2017-09-01 | 2017-12-22 | 北京无线电计量测试研究所 | A kind of adhering method for quartz wafer |
| CN111147041A (en) * | 2019-12-20 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Quartz crystal resonator lamination assembly structure and method and resonator |
| CN111256673A (en) * | 2020-01-19 | 2020-06-09 | 北京晨晶电子有限公司 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
| CN113790715A (en) * | 2021-11-16 | 2021-12-14 | 北京晨晶电子有限公司 | Surface-mounted quartz tuning fork gyroscope and processing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2109663U (en) * | 1992-01-09 | 1992-07-08 | 烟台宝石轴承总厂 | Micro high frequency quartz resonator |
| CN201001100Y (en) * | 2007-01-19 | 2008-01-02 | 深圳市晶峰科技开发有限公司 | Crystal resonator |
| CN101430955A (en) * | 2007-11-09 | 2009-05-13 | 国巨股份有限公司 | Wafer resistor element and manufacturing method thereof |
| CN201369707Y (en) * | 2009-02-21 | 2009-12-23 | 烟台大明电子有限公司 | Quartz resonator base spring piece |
| CN101777883A (en) * | 2010-01-11 | 2010-07-14 | 三河奥斯特电子有限公司 | All-metal material packaged type quartz-crystal resonator and preparation process thereof |
| CN201536354U (en) * | 2009-07-28 | 2010-07-28 | 武汉海创电子股份有限公司 | Super-high base frequency quartz crystal resonator |
| US20110233694A1 (en) * | 2010-03-26 | 2011-09-29 | Yoshifumi Yoshida | Manufacturing method of electronic device package, electronic device package, and oscillator |
| US20110241792A1 (en) * | 2010-03-30 | 2011-10-06 | Fujitsu Limited | Package, piezoelectric vibrator and piezoelectric oscillator |
-
2011
- 2011-11-23 CN CN201110376791.4A patent/CN103138710B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2109663U (en) * | 1992-01-09 | 1992-07-08 | 烟台宝石轴承总厂 | Micro high frequency quartz resonator |
| CN201001100Y (en) * | 2007-01-19 | 2008-01-02 | 深圳市晶峰科技开发有限公司 | Crystal resonator |
| CN101430955A (en) * | 2007-11-09 | 2009-05-13 | 国巨股份有限公司 | Wafer resistor element and manufacturing method thereof |
| CN201369707Y (en) * | 2009-02-21 | 2009-12-23 | 烟台大明电子有限公司 | Quartz resonator base spring piece |
| CN201536354U (en) * | 2009-07-28 | 2010-07-28 | 武汉海创电子股份有限公司 | Super-high base frequency quartz crystal resonator |
| CN101777883A (en) * | 2010-01-11 | 2010-07-14 | 三河奥斯特电子有限公司 | All-metal material packaged type quartz-crystal resonator and preparation process thereof |
| US20110233694A1 (en) * | 2010-03-26 | 2011-09-29 | Yoshifumi Yoshida | Manufacturing method of electronic device package, electronic device package, and oscillator |
| US20110241792A1 (en) * | 2010-03-30 | 2011-10-06 | Fujitsu Limited | Package, piezoelectric vibrator and piezoelectric oscillator |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450197A (en) * | 2016-01-09 | 2016-03-30 | 烟台晶英电子有限公司 | Surface-mounted quartz crystal resonator and processing process thereof |
| CN107508570A (en) * | 2017-09-01 | 2017-12-22 | 北京无线电计量测试研究所 | A kind of adhering method for quartz wafer |
| CN111147041A (en) * | 2019-12-20 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Quartz crystal resonator lamination assembly structure and method and resonator |
| CN111147041B (en) * | 2019-12-20 | 2023-10-20 | 中国电子科技集团公司第十三研究所 | Quartz crystal resonator lamination assembly structure and method and resonator |
| CN111256673A (en) * | 2020-01-19 | 2020-06-09 | 北京晨晶电子有限公司 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
| CN111256673B (en) * | 2020-01-19 | 2021-09-10 | 北京晨晶电子有限公司 | Connecting structure and connecting method of quartz tuning fork and base and application of connecting structure and connecting method |
| CN113790715A (en) * | 2021-11-16 | 2021-12-14 | 北京晨晶电子有限公司 | Surface-mounted quartz tuning fork gyroscope and processing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103138710B (en) | 2016-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103138710B (en) | The method of attachment of wafer and pedestal and gained crystal resonator | |
| CN105006316B (en) | Ceramic thermistor vacuum sputtering electrode and its manufacture method | |
| CN106653977B (en) | A kind of flip chip packaging structure and forming method | |
| CN103412164B (en) | The MEMS (micro electro mechanical system) probe gone between based on elastic substrates and the back side and preparation method | |
| CN203165596U (en) | Thick-film vulcanization-resisting patch resistor | |
| CN103928415A (en) | Structure of pin region | |
| CN103199137A (en) | Welding strip used in low-temperature welding mode and used for solar photovoltaic module | |
| CN103647017A (en) | Million-times hot and cold impact resistance thermoelectricity semiconductor refrigeration/heating device and manufacturing method thereof | |
| CN102425879B (en) | Preparation method of thermoelectric refrigerator for high orbit space | |
| CN202662615U (en) | Axial diode | |
| CN101841314A (en) | Quartz crystal resonator and manufacturing method thereof | |
| JP2012182490A (en) | Manufacturing method for solar cell | |
| CN203787472U (en) | Piezoelectric ceramic sheet counter-rotating pole structure | |
| CN201509183U (en) | Concave type glass insulator quartz crystal resonator | |
| CN103050205A (en) | Manufacturing method for radio frequency power resistor | |
| TWI730493B (en) | Non-conductive film having heating function and electronic device | |
| CN209729740U (en) | A kind of MHFC copper sheet | |
| CN104538321B (en) | The method and application of silicon chip and molybdenum sheet welding in a kind of semiconductor devices | |
| CN208352619U (en) | A kind of small Type Titanium Alloy sealing-in electric connector with stress relief structure | |
| CN201397714Y (en) | Chip type fuse resistor | |
| CN207124084U (en) | Thick film high pressure patch resistor | |
| CN113900286B (en) | Manufacturing method of SMT type optical isolator | |
| CN220796733U (en) | High-reliability surge-current-resistant over-transient voltage protection device | |
| CN106452385A (en) | High-temperature resistant column crystal | |
| CN205376711U (en) | 8 -18GHz's broadband microstrip substrate formula isolator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |