CN103050205A - Manufacturing method for radio frequency power resistor - Google Patents
Manufacturing method for radio frequency power resistor Download PDFInfo
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- CN103050205A CN103050205A CN201210555707XA CN201210555707A CN103050205A CN 103050205 A CN103050205 A CN 103050205A CN 201210555707X A CN201210555707X A CN 201210555707XA CN 201210555707 A CN201210555707 A CN 201210555707A CN 103050205 A CN103050205 A CN 103050205A
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- nitride substrate
- aluminium nitride
- microns
- frequency power
- radio
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Abstract
The invention belongs to the technical field of resistor manufacturing and in particular discloses a manufacturing method for a radio frequency power resistor. The method comprises the following steps: through surface and back electrode printing, resistor making, abrasive trimming, primary splitting, secondary splitting and coating a soldering paste on a mounting flange, integrally welding the back face of the electroplated aluminum nitride substrate and the mounting flange and soldering a pure silver lead on an electrode leading-out end on the surface of the aluminum nitride substrate; and bonding an aluminum trioxide ceramic cover on the surface of aluminum nitride containing the lead through an adhesive with good heat conductivity. Through the adoption of the making method disclosed by the invention, the traditional beryllium oxide substrate is replaced with the more environment friendly aluminum nitride substrate with good heat conductivity, the heat of the made finished product during using can be effectively conducted to a flange and a heat radiator through a heat conducting mode in time, and good high frequency performance of the product at higher frequency can be guaranteed.
Description
Technical field
The invention belongs to resistance manufacturing technology field, be specifically related to a kind of manufacture method of radio-frequency power resistance.
Background technology
The radio-frequency power resistor is as a kind of important electronic component, be widely used in the wireless electronic device and system of the Military and civil fields such as communication, radar signal machine, Aeronautics and Astronautics, in these electronic devices and system, radio-frequency power resistance mainly plays the effects such as coupling, power termination.When wireless system works, there is not power in circulator, coupler and joint line port, but when mismatch etc. appears in system, radio-frequency power will appear in port, these power will the form by heating consume on the radio-frequency power resistor, thereby avoid burning other critical elements of rear end or assembly.
Wireless technology development constantly requires the operating frequency of element higher, more powerful, working temperature is higher and size is less, and is also more and more higher to the performance requirement of resistor.Miniaturization, chip type, high accuracy, array, high temperature tolerance, high frequency, high stable, high reliability are the Main Trends of The Developments of radio-frequency power resistor.
Summary of the invention
For above-mentioned characteristics of the prior art, the present invention aims to provide the manufacture method of the radio-frequency power resistance that a kind of volume is little, power capacity is large, high frequency characteristics is good, stable and reliable for performance, easy for installation.
In order to achieve the above object, technical scheme of the present invention: a kind of radio-frequency power resistance film manufacture method,
Comprise that step has,
A. table, back electrode printing: corresponding printing table, back electrode on aluminium nitride substrate table, the back side, 8 microns～25 microns of dry thickness, with the aluminium nitride substrate that is printed with table, back electrode 850 ± 2 ℃ of lower sintering 8 minutes～12 minutes;
B. resistive element is made: adopt conventional method for printing screen at aluminium nitride substrate surface printing resistive element, and 10 microns～20 microns of dry thickness, 850 ℃ of conventional methods are burnt till;
C. abrasive trimming: adopt the mode of abrasive trimming that resistance evenly is adjusted in the unified required Standard resistance range;
D. at aluminium nitride substrate surface printing high temp glass slurry, drying, 650 ℃ of lower sintering of conventional method 10 minutes;
E. sliver: with aluminium nitride substrate sliver according to a conventional method, and at a section brushing termination electrode of sliver bar, placed afterwards 600 ± 2 ℃ of lower sintering 5 minutes～9 minutes;
F. secondary splitting: with aluminium nitride substrate secondary splitting according to a conventional method, and nickel plating forms target, 2 microns～7 microns of nickel layer thickness; Tin-lead plating forms outer electrode, 3 microns～18 microns of leypewter layer thicknesses afterwards;
G. be coated with soldering paste at mounting flange, the back side and the mounting flange of the aluminium nitride substrate after electroplating is welded in one, and with the electrode leads to client place of fine silver wire bonds on the aluminium nitride substrate surface;
H. by the good bonded adhesives of thermal conductivity the capping of alundum (Al2O3) pottery is bonded in the surface that contains leaded aluminium nitride.
Further, the electrode slurry of described table, back electrode is palladium-silver.
Described mounting flange is by the machine-shaping of tungsten copper nickel plating machinery.
Described mounting flange is copper tungsten plate, and on this copper tungsten plate silver-plated or the plating can weld nickel.
Described resistive element adopts ruthenium-oxide slurry high temperature sintering to form.
Before abrasive trimming, seal according to a conventional method front visual examination.
Bonded adhesives in the described h step is organosilicon heat-conducting glue or room temperature vulcanization bonding agent.
Beneficial effect of the present invention: this manufacture method replaces to more environmental protection and the good aluminium nitride substrate of heat conductivility with traditional beryllium oxide substrate, heat when the finished product that makes uses can conduct to flange and radiator by heat conducting mode timely and effectively, can guarantee that product obtains good high frequency performance under higher frequency.
Embodiment
Further describe the present invention below in conjunction with specific embodiment.
Combination by high-frequency structure design of Simulation and actual verification is also carried out structure optimization, prepares aluminium nitride substrate.The emulation of concrete high-frequency structure is exactly in the ideal situation, the product structure of anticipation is input in the simulation software, by a series of result who calculates the emulation of input data institute, if ideal simulation just can be carried out trial production according to the condition of input, after finishing, trial-production carries out again high-frequency test in kind; If simulation result is undesirable, can in software, change some parameters until ideal simulation and carry out trial production, the product that satisfies the design input requirements is produced in the contrast of carrying out emulation and practice that so moves in circles with guidance.
After the high frequency design of Simulation is to calculate the physical dimension of resistor structure size and electrode, by simulation software the structure of design is further optimized again, and pass through the designed figure of simulation results show under specific high-frequency, whether its standing-wave ratio is close to 1:1.Particularly,
A kind of manufacture method of radio-frequency power resistance, it comprises that step has,
The selection standard aluminum nitride ceramic substrate, then according to the power that designs, and the resistive film temperature, calculate the resistive film area that under this power, needs by one-dimensional stable hot-fluid fundamental equation.Then design contact lengths, deduct the length that contact lengths obtains resistive film by substrate length, again by resistive film area and resistive film length computation membrane width.
A. table, back electrode printing: corresponding printing table, back electrode on aluminium nitride substrate table, the back side, 8 microns～25 microns of dry thickness, table, the used electrode slurry of back electrode are palladium-silver, definite, described table electrode is that palladium-silver slurry high temperature sintering forms; Described back electrode welding functional layer adopts palladium-silver slurry high temperature sintering to form, and the aluminium nitride substrate that is printed with table, back electrode 850 ± 2 ℃ of lower sintering 8 minutes～12 minutes, is adopted that silk is brushed, resistance slurry is ruthenium-oxide during high-temperature sintering process;
B. resistive element is made: adopt method for printing screen at aluminium nitride substrate surface printing resistive element, 10 microns～20 microns of dry thickness, the used resistance slurry of resistive element is ruthenium-oxide, then according to a conventional method 850 ℃ burn till;
C. abrasive trimming: adopt the mode of abrasive trimming that resistance is adjusted in the unified required Standard resistance range, then seal according to a conventional method front visual examination;
D. at aluminium nitride substrate surface printing high temp glass slurry, drying, 650 ℃ of lower sintering of conventional method 10 minutes;
E. sliver: with aluminium nitride substrate sliver according to a conventional method, and at a section brushing termination electrode of sliver bar, placed afterwards 600 ± 2 ℃ of lower sintering 5 minutes～9 minutes, its middle-end pasting material is silver palladium alloy;
F. secondary splitting: with aluminium nitride substrate secondary splitting according to a conventional method, and nickel plating forms target, 2 microns～7 microns of nickel layer thickness; Tin-lead plating forms outer electrode, 3 microns～18 microns of leypewter layer thicknesses afterwards; The sputter resistive element, because the bonding heat transfer property that also affects of ceramic capping, therefore, adopt the silicon rubber of heat conduction that ceramic capping is bonded in the resistive element surface, being better than present manual bonding way can cause the heat-conducting silicon rubber between ceramic capping and the resistive element surface in uneven thickness, in the binder removal process since everywhere the applied pressure difference cause producing in the silicon rubber bubble, the conduction of impact heat, the heat of heat-transfer surface can not be timely by the external environment of heat-conducting silicon rubber transmission, and then affect the power-performance of product;
G. be coated with soldering paste at mounting flange, the back side and the mounting flange of the aluminium nitride substrate after electroplating is welded in one, and with the electrode leads to client place of fine silver wire bonds on the aluminium nitride substrate surface; Particularly, described flange material is the machine-shaping of tungsten copper nickel plating machinery, and solder paste material is SAC.Welding fine silver lead-in wire (it is zinc-plated in advance to go between, and welding manner adopts thermocompression bonding) selects ruthenium-oxide slurry high temperature sintering to form resistive element, selects zinc-plated fine silver lead-in wire.Comprehensive Design microwave power resistor overlapping part satisfies the requirement of load and standing-wave ratio, and the load life of microwave power resistance is subject to weld strength and the overlap joint area effect in hot junction (welding lead end).Welding lead is insecure, also can cause load life stage lead-in wire bad even disconnect and cause product failure with the electrode overlap joint.The advantage of selecting this class lead-in wire is convenient welding, intensity height, the property led height, elasticity height, hardness is high, highly sensitive, working temperature is high, corrosion-resistant etc.
H. by the good bonded adhesives of thermal conductivity the capping of alundum (Al2O3) pottery is bonded in the surface that contains leaded aluminium nitride, wherein index plane upwards.Organosilicon heat-conducting glue or room temperature vulcanization bonding agent are selected in bonded ceramics capping (in advance printed mark).The Main Function of heat-conducting silicon rubber is the effect of product being played sealing, can not stop the heat of product surface to distribute to external environment simultaneously.The selection of heat-conducting silicon rubber, one side will be considered thermal conductivity and the adhesive property of heat-conducting silicon rubber, will consider on the other hand resistance to elevated temperatures, sealing and the acid-proof alkaline of heat-conducting silicon rubber, has guaranteed that product is not subjected to the impact of external environment.
Select the good copper tungsten plate of heat conductivility as the flange of power resistor, the heat that power resistor is produced in the course of the work is delivered on radiator or the casing fast, can weld nickel in the plating of tungsten copper ring flange simultaneously, both guaranteed the reliability of welding, electrical connection after having guaranteed again to install, welded flange, heating panel being installed for the resistor back side has made the very fast heating panel that passes through of the heat that produces in the product work process be transferred in the external environment and go, the temperature that guarantees the product base remains on below 100 ℃, after carry out according to a conventional method visual examination.
More than technical scheme that the embodiment of the invention is provided be described in detail, used specific case herein principle and the execution mode of the embodiment of the invention are set forth, the explanation of above embodiment is only applicable to help to understand the principle of the embodiment of the invention; Simultaneously, for one of ordinary skill in the art, according to the embodiment of the invention, all will change on embodiment and range of application, in sum, this description should not be construed as limitation of the present invention.
Claims (7)
1. the manufacture method of a radio-frequency power resistance is characterized in that: comprise that step has,
A. table, back electrode printing: corresponding printing table, back electrode on aluminium nitride substrate table, the back side, 8 microns～25 microns of dry thickness, with the aluminium nitride substrate that is printed with table, back electrode 850 ± 2 ℃ of lower sintering 8 minutes～12 minutes;
B. resistive element is made: adopt conventional method for printing screen at aluminium nitride substrate surface printing resistive element, and 10 microns～20 microns of dry thickness, 850 ℃ of conventional methods are burnt till;
C. abrasive trimming: adopt the mode of abrasive trimming that resistance evenly is adjusted in the unified required Standard resistance range;
D. at aluminium nitride substrate surface printing high temp glass slurry, drying, 650 ℃ of lower sintering of conventional method 10 minutes;
E. sliver: with aluminium nitride substrate sliver according to a conventional method, and at a section brushing termination electrode of sliver bar, placed afterwards 600 ± 2 ℃ of lower sintering 5 minutes～9 minutes;
F. secondary splitting: with aluminium nitride substrate secondary splitting according to a conventional method, and nickel plating forms target, 2 microns～7 microns of nickel layer thickness; Tin-lead plating forms outer electrode, 3 microns～18 microns of leypewter layer thicknesses afterwards;
G. be coated with soldering paste at mounting flange, the back side and the mounting flange of the aluminium nitride substrate after electroplating is welded in one, and with the electrode leads to client place of fine silver wire bonds on the aluminium nitride substrate surface;
H. by the good bonded adhesives of thermal conductivity the capping of alundum (Al2O3) pottery is bonded in the surface that contains leaded aluminium nitride.
2. the manufacture method of a kind of radio-frequency power resistance according to claim 1, it is characterized in that: the electrode slurry of described table, back electrode is palladium-silver.
3. the manufacture method of a kind of radio-frequency power resistance according to claim 1 is characterized in that: described mounting flange is by the machine-shaping of tungsten copper nickel plating machinery.
4. the manufacture method of a kind of radio-frequency power resistance according to claim 1, it is characterized in that: described mounting flange is copper tungsten plate, and silver-plated or plating can be welded nickel on this copper tungsten plate.
5. the manufacture method of a kind of radio-frequency power resistance according to claim 1 is characterized in that: described resistive element adopts ruthenium-oxide slurry high temperature sintering to form.
6. the manufacture method of a kind of radio-frequency power resistance according to claim 1 is characterized in that: seal according to a conventional method front visual examination before abrasive trimming.
7. the manufacture method of a described Dun radio-frequency power resistance according to claim 1, it is characterized in that: the bonded adhesives in the described h step is organosilicon heat-conducting glue or room temperature vulcanization bonding agent.
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| CN201210555707XA CN103050205A (en) | 2012-12-19 | 2012-12-19 | Manufacturing method for radio frequency power resistor |
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| CN201210555707XA CN103050205A (en) | 2012-12-19 | 2012-12-19 | Manufacturing method for radio frequency power resistor |
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| CN103050205A true CN103050205A (en) | 2013-04-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293385A (en) * | 2017-06-29 | 2017-10-24 | 无锡海古德新技术有限公司 | A kind of resistance slurry thick-film technique of aluminium nitride substrate |
| CN112712951A (en) * | 2020-12-18 | 2021-04-27 | 中国振华集团云科电子有限公司 | Heat dissipation type non-inductive thick film power resistor and manufacturing method thereof |
| CN112712950A (en) * | 2020-12-18 | 2021-04-27 | 中国振华集团云科电子有限公司 | Power resistor and preparation method thereof |
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| CN100524547C (en) * | 2007-02-14 | 2009-08-05 | 光颉科技股份有限公司 | Making method for current induction wafer resistor |
| CN201478027U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride radio-frequency resistance |
| CN101593589B (en) * | 2009-04-30 | 2011-06-29 | 中国振华集团云科电子有限公司 | Manufacturing method for JANS plate type thick film resistor |
| CN102820111A (en) * | 2012-08-23 | 2012-12-12 | 中国振华集团云科电子有限公司 | Chip film fixed resistor and production method thereof |
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2012
- 2012-12-19 CN CN201210555707XA patent/CN103050205A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100524547C (en) * | 2007-02-14 | 2009-08-05 | 光颉科技股份有限公司 | Making method for current induction wafer resistor |
| CN101593589B (en) * | 2009-04-30 | 2011-06-29 | 中国振华集团云科电子有限公司 | Manufacturing method for JANS plate type thick film resistor |
| CN201478027U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride radio-frequency resistance |
| CN102820111A (en) * | 2012-08-23 | 2012-12-12 | 中国振华集团云科电子有限公司 | Chip film fixed resistor and production method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293385A (en) * | 2017-06-29 | 2017-10-24 | 无锡海古德新技术有限公司 | A kind of resistance slurry thick-film technique of aluminium nitride substrate |
| CN112712951A (en) * | 2020-12-18 | 2021-04-27 | 中国振华集团云科电子有限公司 | Heat dissipation type non-inductive thick film power resistor and manufacturing method thereof |
| CN112712950A (en) * | 2020-12-18 | 2021-04-27 | 中国振华集团云科电子有限公司 | Power resistor and preparation method thereof |
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Application publication date: 20130417 |