CN204596786U - A kind of power model - Google Patents
A kind of power model Download PDFInfo
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- CN204596786U CN204596786U CN201520286739.3U CN201520286739U CN204596786U CN 204596786 U CN204596786 U CN 204596786U CN 201520286739 U CN201520286739 U CN 201520286739U CN 204596786 U CN204596786 U CN 204596786U
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- power terminal
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- metal layer
- electrical insulation
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Abstract
A kind of power model, it mainly comprises: a substrate; One or more semiconductor chip is connected base by Welding on the first metal layer of substrate with one or more power terminal; One or more power terminal is connected base by mechanical connection manner with power terminal and connects correspondingly; A face of described substrate has the electrical insulation of the first metal layer, another face has the electrical insulation of the second metal level; The cross section that described power terminal connects base and power terminal has circle, rectangle or other geometric figure respectively; And power terminal connects with interference fit, thread connecting mode or other mechanical fit system are connected base and carry out connection and coordinate with power terminal; Described manufacture method comprises the steps: that semiconductor chip and power terminal are connected base and be soldered on the first metal layer of substrate by solder printing process simultaneously by step a); Step b) then power terminal is connected base by mechanical connection manner with power terminal and connects.
Description
Technical field
The utility model relates to power model, belongs to power electronics modules technical field.
Background technology
General typical power model semiconductor chip and power terminal adopt substep Welding to complete; Multistep welding not only causes the loaded down with trivial details of production process, increases wash number, improves the cost of manufacture of module; And in the welding process of multistep, easily cause solder joint cavity; Particularly electronic module field, module chip is in operation to be needed rapidly and uniform heat radiation, and this just requires that solder joint has lower thermal resistance.The existence in cavity easily causes the local cluster of energy and heat, the skewness of aggravation electric current or heat, impels the generation of stress and solder joint cracking to occur.
Summary of the invention
The purpose of this utility model is the deficiency overcoming prior art existence, and provides a kind of rational in infrastructure, compact, installs manufacture craft simply, can reduce power model and the manufacture method of module making cost.
The purpose of this utility model has been come by following technical solution, a kind of power model, and it mainly comprises: a substrate, at least one face of this substrate has the electrical insulation of the first metal layer; One or more semiconductor chip is connected base by Welding on the first metal layer of substrate with one or more power terminal; One or more power terminal is connected base by mechanical connection manner with power terminal and connects correspondingly.
A face of substrate described in the utility model has the electrical insulation of the first metal layer, another face has the electrical insulation of the second metal level; The cross section that described power terminal connects base and power terminal has circle, rectangle or other geometric figure respectively; And power terminal connects with interference fit, thread connecting mode or other mechanical fit system are connected base and carry out connection and coordinate with power terminal.
A face of substrate described in the utility model has the electrical insulation of the first metal layer, another face has the electrical insulation of the second metal level; The bottom of described power terminal has external screw thread, and power terminal connects base and has corresponding internal thread, and power terminal is connected to the screw-internal thread fit that power terminal connects base corresponding by the external screw thread of bottom.
Power terminal maximum cross section described in the utility model length has is a bit larger tham power terminal connection base maximum cross section length 0.05mm ~ 0.2mm; Power terminal length range is 10 ~ 30mm, and wherein power terminal connects base length scope is 2 ~ 5mm; Described power terminal is connected base surface with power terminal has gold-plated, silver-plated, nickel plating or other weldability metals.
A manufacture method for power model described above, this manufacture method comprises the steps:
Semiconductor chip and power terminal are connected base and are soldered on the first metal layer of substrate by solder printing process simultaneously by step a);
Step b) then power terminal is connected base by mechanical connection manner with power terminal and connects.
The utility model is further preferably:
In step a), the upper and lower surface of described substrate respectively has the electrical insulation of the first metal layer and the second metal level, by printing machine use have figure and certain thickness steel mesh by solder printing to the first metal layer of substrate so that the attachment welding of other original paper follow-up;
One or more semiconductor chip is connected base and mounts assigned address to being printed on solder layer substrate by mounting device with one or more power terminal, more whole substrate is completed welding through soldering furnace;
In step b), by power terminal by assembly equipment, connect with interference fit, thread connecting mode or other mechanical fit system be connected base and carry out connection and coordinate with power terminal.
The utility model is that semiconductor chip and power terminal are connected base is be soldered to substrate the first metal layer by solder printing process simultaneously, and described substrate has the electrical insulation of the first metal layer and the second metal level; Then power terminal is connected base by mechanical connection manner with power terminal and connects, and this avoid the problem that substep bonding power terminal easily produces solder joint cavity, simplifies module making operation, reduce module making cost.
The utility model has rational in infrastructure, compact, installs manufacture craft simply, can reduce the features such as module making cost.
Accompanying drawing explanation
Fig. 1 is the end face structure schematic diagram of substrate printing solder described in the utility model.
Fig. 2 is the planar structure schematic diagram of substrate printing solder described in the utility model.
Fig. 3 is the schematic diagram that semiconductor chip described in the utility model is connected that with power terminal base is soldered to substrate.
Fig. 4 is power terminal described in the utility model is connected base engagement schematic diagram with power terminal.
fig. 5 is module whole interior welds schematic diagram described in the utility model.
Embodiment
Be described in detail the utility model below in conjunction with accompanying drawing: shown in Fig. 1-4, a kind of power model described in the utility model, it mainly comprises: a substrate 100, at least one face of this substrate 100 has the electrical insulation of the first metal layer 101; One or more semiconductor chip 301 is connected base 401 by Welding on the first metal layer 101 of substrate 100 with one or more power terminal; One or more power terminal 402 is connected base 401 by mechanical connection manner with power terminal and connects correspondingly.
Shown in Fig. 1, a face of substrate 100 described in the utility model has the electrical insulation of the first metal layer 101, another face has the electrical insulation of the second metal level 102; The cross section that described power terminal connects base 401 and power terminal 402 has circle, rectangle or other geometric figure respectively; And power terminal 402 connects with interference fit, thread connecting mode or other mechanical fit system are connected base 401 and carry out connection and coordinate with power terminal.
Another embodiment of the present utility model is: an electrical insulation face of described substrate 100 with the first metal layer 101, another face has the electrical insulation of the second metal level 102; The bottom of described power terminal 402 has external screw thread, and power terminal connects base 401 and has corresponding internal thread, and power terminal 402 is connected to the screw-internal thread fit that power terminal connects base 401 corresponding by the external screw thread of bottom.
Power terminal 402 maximum cross section described in the utility model length has is a bit larger tham power terminal connection base 401 maximum cross section length 0.05mm ~ 0.2mm; Power terminal 402 length range is 10 ~ 30mm, and wherein power terminal connects base 401 length range is 2 ~ 5mm; Described power terminal 402 is connected base 401 surface with power terminal has gold-plated, silver-plated, nickel plating or other weldability metals.
A manufacture method for power model described above, is characterized in that: this manufacture method comprises the steps:
Semiconductor chip and power terminal are connected base and are soldered on the first metal layer of substrate by solder printing process simultaneously by step a);
Step b) then power terminal is connected base by mechanical connection manner with power terminal and connects.
Further embodiment of the present utility model is:
In step a), the upper and lower surface of described substrate respectively has the electrical insulation of the first metal layer and the second metal level, by printing machine use have figure and certain thickness steel mesh by solder printing to the first metal layer of substrate so that the attachment welding of other original paper follow-up;
One or more semiconductor chip is connected base and mounts assigned address to being printed on solder layer substrate by mounting device with one or more power terminal, more whole substrate is completed welding through soldering furnace;
In step b), by power terminal by assembly equipment, connect with interference fit, thread connecting mode or other mechanical fit system be connected base and carry out connection and coordinate with power terminal.
embodiment 1:
Shown in Fig. 1,2, described substrate 100 is the electrical insulations with the first metal layer 101 and the second metal level 102, uses the steel mesh of special pattern and specific thicknesses to print to the first metal layer 101 of substrate solder 201 so that the attachment welding of other elements follow-up by printing machine.
It is the schematic diagram that semiconductor chip is connected that with power terminal base is soldered to substrate shown in Fig. 3, wherein multiple semiconductor chip 301 is connected base 401 by the attachment of special mounting device to the assigned address of substrate being printed on solder layer with multiple power terminal, more whole substrate is completed welding through soldering furnace.
The substrate completing above welding also may need through other but not affect the processing step of power terminal connection, no longer sets forth herein.
It is power terminal is connected base engagement schematic diagram with power terminal shown in Fig. 4, by power terminal 402 by special assembly equipment, connect with interference fit, thread connecting mode or other mechanical fit systems be connected base 401 and carry out connection and coordinate with power terminal, illustrate illustrates by interference fit connection herein.
The utility model is intended to illustrate that power terminal connects the base process of welding with semiconductor chip one step, and method that base connects still belongs to rights protection scope of the present utility model to use any other mechanical fit system to be connected with power terminal by power terminal.
Fig. 5 is module whole interior welds schematic diagram, omits chip chamber and connect wire in figure.
Claims (4)
1. a power model, it mainly comprises: a substrate, at least one face of this substrate has the electrical insulation of the first metal layer; It is characterized in that: one or more semiconductor chip is connected base by Welding on the first metal layer of substrate with one or more power terminal; One or more power terminal is connected base by mechanical connection manner with power terminal and connects correspondingly.
2. power model according to claim 1, is characterized in that: an electrical insulation face of described substrate with the first metal layer, another face has the electrical insulation of the second metal level; The cross section that described power terminal connects base and power terminal has circle, rectangle or other geometric figure respectively; And power terminal connects with interference fit, thread connecting mode or other mechanical fit system are connected base and carry out connection and coordinate with power terminal.
3. power model according to claim 1, is characterized in that: an electrical insulation face of described substrate with the first metal layer, another face has the electrical insulation of the second metal level; The bottom of described power terminal has external screw thread, and power terminal connects base and has corresponding internal thread, and power terminal is connected to the screw-internal thread fit that power terminal connects base corresponding by the external screw thread of bottom.
4. the power model according to claim 1 or 2 or 3, is characterized in that: described power terminal maximum cross section length has is a bit larger tham power terminal connection base maximum cross section length 0.05mm ~ 0.2mm; Power terminal length range is 10 ~ 30mm, and wherein power terminal connects base length scope is 2 ~ 5mm; Described power terminal is connected base surface with power terminal has gold-plated, silver-plated, nickel plating or other weldability metals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520286739.3U CN204596786U (en) | 2015-05-06 | 2015-05-06 | A kind of power model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520286739.3U CN204596786U (en) | 2015-05-06 | 2015-05-06 | A kind of power model |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204596786U true CN204596786U (en) | 2015-08-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520286739.3U Active CN204596786U (en) | 2015-05-06 | 2015-05-06 | A kind of power model |
Country Status (1)
| Country | Link |
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| CN (1) | CN204596786U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916612A (en) * | 2015-05-06 | 2015-09-16 | 嘉兴斯达微电子有限公司 | Power module and making method thereof |
| CN105118816A (en) * | 2015-08-25 | 2015-12-02 | 无锡新洁能股份有限公司 | Power terminal and power module employing power terminal |
-
2015
- 2015-05-06 CN CN201520286739.3U patent/CN204596786U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916612A (en) * | 2015-05-06 | 2015-09-16 | 嘉兴斯达微电子有限公司 | Power module and making method thereof |
| CN105118816A (en) * | 2015-08-25 | 2015-12-02 | 无锡新洁能股份有限公司 | Power terminal and power module employing power terminal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171220 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |
|
| TR01 | Transfer of patent right |