CN211088255U - Silicon controlled rectifier module - Google Patents
Silicon controlled rectifier module Download PDFInfo
- Publication number
- CN211088255U CN211088255U CN201922416810.6U CN201922416810U CN211088255U CN 211088255 U CN211088255 U CN 211088255U CN 201922416810 U CN201922416810 U CN 201922416810U CN 211088255 U CN211088255 U CN 211088255U
- Authority
- CN
- China
- Prior art keywords
- module
- electrode
- base
- silicon controlled
- utmost point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a silicon controlled rectifier module, the on-line screen storage device comprises a base, be fixed with the interior subassembly of module on the base, the welding has the utmost point lead wire of GK in the module on the subassembly, install the casing on the base, be provided with outside GK electrode and connector in the casing, the utmost point lead wire of GK passes the through-hole and the outside GK electrode connection of connector. The utility model adopts a vacuum high-temperature eutectic process, the product cavity is small, and the thermal resistance is low; manual welding of outgoing lines is not needed inside the internal GK electrode, and reliability is high; the product manufacturing process is less, the process control is simple, and the labor cost is low; the whole product has advanced welding process, simple assembly process, low cost and reliable quality.
Description
Technical Field
The utility model relates to a silicon controlled rectifier module technical field specifically is a silicon controlled rectifier module.
Background
The power module is an electronic device necessary for the development of modern power electronics towards integration and miniaturization, is a direction of the development of power electronics technology, and is increased by 20% every year in recent years, and the development trend is still rising. The power module is the core device of the power electronic circuit and the control system, and the performance parameters of the power module directly determine the efficiency and reliability of the power electronic system. The controllable silicon power module belongs to a power semiconductor product, if the product performance is reduced and the reliability is reduced due to too complex manufacturing process in the manufacturing process, and how to handle the control of the welding process and the GK pole lead in the production process of the controllable silicon module is a difficult point of the industry, so that the controllable silicon module product with high reliability can be produced by improving the welding process and the leading-out mode of the GK pole lead.
At present, the domestic TO-240AA power module adopts two modes: assembly type chip welding: the ready-made chip with sintered upper and lower molybdenum sheets is used as an assembly and is welded with other metal parts by a hot plate or other heating tools in a mode of coating solder paste, and the GK pole lead wire is welded with the GK pole on the chip by using an electric iron with a high-temperature insulated wire. The chip of the process is welded for many times, and the reliability is reduced due to the influence of many times of thermal stress. In the soldering paste process, the product voidage is increased, the thermal resistance is high, and meanwhile, the residual solder resist needs to be cleaned by using a cleaning agent, so that corresponding environmental problems are caused. (II) an aluminum wire bonding process: after the bare chip and the DBC board are welded, a binding machine is used for punching an aluminum wire, a GK wire is led out by a long thin lead wire, multiple welding is needed, the process is complex, the overload capacity of the aluminum wire is poor, and the product quality is influenced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon controlled rectifier module to solve the problem among the prior art.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a silicon controlled module, includes the base, be fixed with subassembly in the module on the base, the welding has the utmost point lead wire of GK in the module on the subassembly, install the casing on the base, be provided with outside GK electrode and connector in the casing, the utmost point lead wire of GK passes the through-hole and the outside GK electrode connection of connector.
Preferably, the module inner assembly is welded with 4 GK pole leads, and the GK pole leads are thin copper wires.
Preferably, the external GK electrodes are provided with 4 in total, and the 4 external GK electrodes correspond to the 4 GK electrode leads, respectively.
Compared with the prior art, the beneficial effects of the utility model are that: the product cavity is small and the thermal resistance is low by the primary vacuum high-temperature eutectic process; manual welding of outgoing lines is not needed inside the internal GK electrode, and reliability is high; the product manufacturing process is less, the process control is simple, and the labor cost is low; the whole product has advanced welding process, simple assembly process, low cost and reliable quality.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the casing and the external GK electrode of the present invention.
In the figure: 1. a base; 2. an in-module component; 3. a GK pole lead; 4. a housing; 5. an external GK electrode; 6. a connecting head.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Please refer to fig. 1 and 2, in the embodiment of the present invention, a silicon controlled module, includes a base 1, a module 2 is fixed on the base 1, a GK electrode lead 3 is welded on the module 2, a housing 4 is installed on the base 1, an external GK electrode 5 and a connector 6 are provided in the housing 4, the GK electrode lead 3 passes through the through hole of the connector 6 and is connected with the external GK electrode 5, a total welding of 4 GK electrode leads 3 is provided on the module 2, the GK electrode lead 3 adopts a thin copper wire, the external GK electrode 5 is provided with 4, and 4 external GK electrodes 5 correspond to the 4 GK electrode leads 3 respectively.
The utility model discloses a theory of operation is: the parts of the silicon controlled module are assembled together through a mould, the parts of the power module are assembled together through an internationally advanced vacuum eutectic process, and a GK thin copper wire is led out from a welding part to be connected with an external GK electrode to form the silicon controlled power module.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. The utility model provides a silicon controlled rectifier module, includes base (1), its characterized in that: be fixed with subassembly (2) in the module in base (1), the welding has the utmost point lead wire of GK (3) in the module on subassembly (2), install casing (4) on base (1), be provided with outside GK electrode (5) and connector (6) in casing (4), the through-hole that connector (6) were passed in the utmost point lead wire of GK (3) is connected with outside GK electrode (5).
2. The silicon controlled rectifier module of claim 1, wherein: the module is interior to have 4 GK utmost point leads (3) on subassembly (2) altogether, GK utmost point lead (3) adopt thin copper line.
3. The silicon controlled rectifier module of claim 2, wherein: the external GK electrodes (5) are provided with 4, and the 4 external GK electrodes (5) correspond to the 4 GK pole leads (3) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922416810.6U CN211088255U (en) | 2019-12-29 | 2019-12-29 | Silicon controlled rectifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922416810.6U CN211088255U (en) | 2019-12-29 | 2019-12-29 | Silicon controlled rectifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211088255U true CN211088255U (en) | 2020-07-24 |
Family
ID=71624184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922416810.6U Expired - Fee Related CN211088255U (en) | 2019-12-29 | 2019-12-29 | Silicon controlled rectifier module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211088255U (en) |
-
2019
- 2019-12-29 CN CN201922416810.6U patent/CN211088255U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200724 Termination date: 20211229 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |