CN112712951A - Heat dissipation type non-inductive thick film power resistor and manufacturing method thereof - Google Patents
Heat dissipation type non-inductive thick film power resistor and manufacturing method thereof Download PDFInfo
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- CN112712951A CN112712951A CN202011511969.7A CN202011511969A CN112712951A CN 112712951 A CN112712951 A CN 112712951A CN 202011511969 A CN202011511969 A CN 202011511969A CN 112712951 A CN112712951 A CN 112712951A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/08—Cooling, heating or ventilating arrangements
- H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
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Abstract
A heat dissipation type non-inductive thick film power resistor and a manufacturing method thereof comprise the following steps: the heat dissipation substrate comprises a heat dissipation bottom plate, a ceramic substrate, a surface electrode layer, a thick film resistor layer, a back metallization layer, an encapsulating layer, a silicon rubber layer, a plastic package shell and a plurality of metal pins. The surface of a ceramic substrate welding area of the radiating bottom plate is provided with a plurality of grooves; the upper surface of the ceramic substrate is sequentially provided with a surface electrode layer and a thick film resistor layer, and the back surface of the ceramic substrate is provided with a metallization layer; the packaging layer covers the whole thick film resistor layer and part of the surface electrode layer; the plurality of metal pins comprise a first metal pin and a second metal pin, and the head ends of the first metal pin and the second metal pin are respectively welded on the surface electrode layers at the two ends of the resistance layer through high-temperature-resistant solders; the silicon rubber layer covers the whole encapsulating layer, and the other surface electrode layers which are not covered by the encapsulating layer; the plastic package shell is the outermost layer. The problems of small redundancy of rated power, insufficient strong pulse resistance and the like of the existing resistor are solved. The method is widely applied to high-reliability and miniaturized electronic systems.
Description
Technical Field
The invention belongs to the field of electronic components, in particular to the field of resistors, and further belongs to the field of thick film power resistors.
Background
At present, with the rapid development of high reliability and miniaturization of electronic systems, especially in high-power and high-frequency electronic module parts, involving a large number of heat dissipation and shielding systems, the high reliability and miniaturization degree of electronic systems are determined, and the use of high-power and small-volume resistors is more and more common, and the performance requirements of the resistors are also more and more high. In this application, the metal resistor, such as a metal wire, a foil or a sheet, has excellent pulse resistance, but the larger the power requirement, the larger the volume, and the larger the inherent inductance value, which cannot satisfy the application requirements of miniaturization, high power, high frequency and interference resistance. In order to simplify an additional heat dissipation system as much as possible and improve the reliability of the system, the use of a direct-tape heat dissipation type thick film power resistor is becoming more common. In the prior art, the main structure of the heat dissipation type thick film power resistor of the same type is a planar heat dissipation bottom plate, a ceramic substrate, an electrode layer, a resistance layer, an encapsulation layer and a plurality of metal pins, and because the structure of the resistor is not perfect enough, the heat dissipation capability, the specific power and the anti-pulse performance of the resistor with the same volume are not enough, when the resistor is subjected to overload pulse power energy, the resistor cannot be opened in time, and the electronic system is adversely affected.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The purpose of the invention is: the resistor solves the problems of insufficient heat dissipation capacity, small rated power redundancy, insufficient strong pulse load resistance and the like of the existing resistor.
To solve this problem, the general concept of the present invention is: a silicone rubber layer is added between the encapsulating layer and the plastic encapsulating layer so as to improve the overload stable open circuit capability of the resistance layer and the heat dissipation capability of the top of the packaging body; a plurality of metal pins are uniformly welded on the surface electrode layers at two ends of the resistance layer, so that the heat dissipation capacity is improved; the back of the ceramic substrate is provided with the metallization layer, so that the ceramic substrate and the radiating bottom plate are in compact contact with each other, and the heat transmission capability of the middle part of the packaging body is improved; and the bonding surface of the ceramic substrate and the planar radiating bottom plate with a plurality of grooves on the surface are adopted, so that the penetration rate is ensured and the bottom radiating capacity of the packaging body is increased when the radiating bottom plate is welded with the metallization layer on the back surface of the ceramic substrate.
Therefore, the invention provides a heat dissipation type non-inductive thick film power resistor and a manufacturing method thereof, the structure schematic diagram is shown in figure 1, and the heat dissipation type non-inductive thick film power resistor comprises the following components: the heat radiation base plate comprises a heat radiation base plate 1, a heat radiation base plate extension part 101, a surface transverse groove 102, a surface longitudinal groove 103, an extension part groove 104, a ceramic substrate 2, a surface electrode layer 201, a thick film resistor layer 202, a substrate back metallization layer 203, an encapsulating layer 3, a silicon rubber layer 4, a plastic package shell 5, a first metal pin 6 and a second metal pin 7.
Two sides of one end of the heat dissipation base plate 1 are provided with heat dissipation base plate extension parts 101 so as to increase the heat dissipation area of the heat dissipation base plate; the ceramic substrate welding area of the radiating bottom plate 1 is provided with a surface transverse groove 102 or a surface longitudinal groove 103, so that when the radiating bottom plate is welded with a metal layer on the back of the ceramic substrate, the radiating bottom plate can be well positioned and welded, and the welding flux is controlled to meet the welding requirement of high penetration rate, so that the resistor achieves the optimal radiating performance, and the rated power redundancy of the resistor is ensured by the structure; the inner side of the heat dissipation base plate extension part 101 is provided with an extension part groove 104, so that the injection molding insulating material and the heat dissipation base plate are combined more firmly when the injection molding insulating material is injected.
The upper surface of the ceramic substrate 2 is sequentially provided with a surface electrode layer 201 and a thick film resistor layer 202, and the back surface of the ceramic substrate 2 is provided with a back surface metallization layer 203.
The encapsulating layer 3 covers the entire thick film resistive layer 202 and a portion of the surface electrode layer 201.
The resistor is characterized in that the first metal pins 6 and the second metal pins 7 form a plurality of metal pins, the head ends of the first metal pins 6 and the second metal pins 7 are respectively welded on the surface electrode layers 201 at two ends of the resistance layer through high-temperature-resistant solders, the tail ends of the first metal pins 6 and the second metal pins 7 are used as leading-out ends and are welded on other devices through universal tin, the melting point of tin used for the head ends of the first metal pins 6 and the second metal pins 7 is higher than that of tin used for the tail ends of the first metal pins 6 and the second metal pins 7, and the reliability of the resistor is fully guaranteed.
The silicone rubber layer 4 covers the whole of the encapsulating layer 3, and the encapsulating layer 3 does not cover the rest of the surface electrode layer 201.
The plastic package shell 5 is the outermost layer.
The invention provides a method for manufacturing a heat dissipation type non-inductive thick film power resistor, which is characterized by comprising the following steps:
(1) preparation of ceramic substrate
(2) And printing a surface electrode layer on the surface of the ceramic substrate, and printing a back metallization layer on the back of the ceramic substrate. And drying the ceramic substrate printed with the surface electrode layer and the back metallization layer, and sintering the ceramic substrate printed with the surface electrode layer and the back metallization layer after drying.
(3) And printing a thick film resistor layer on the sintered ceramic substrate, wherein the thick film resistor layer is lapped between the electrode layers on the two end surfaces of the ceramic substrate. And drying the ceramic substrate printed with the resistance layer, sintering the ceramic substrate printed with the thick film resistance layer, and correcting the resistance value through laser after sintering.
(4) And printing an encapsulating layer on the resistance layer after the resistance value correction, drying the encapsulating layer, and then sintering to ensure that the encapsulating layer completely covers the resistance layer and part of the surface electrode layer.
(5) And carrying out end face treatment of nickel plating and tin plating on the ceramic substrate.
(6) A heat dissipation bottom plate is prepared, wherein the left side and the right side of the head end of the heat dissipation bottom plate are respectively provided with an extension part.
(7) The radiating bottom plate, the ceramic substrate with the surface electrode layer, the back metallization layer and the thick film resistor layer and the plurality of metal pins are sequentially placed in a laminated mode, welding areas between every two ceramic substrates are evenly filled with soldering paste, vacuum eutectic welding is carried out through a special positioning welding fixture, the head ends of the plurality of metal pins are welded to the surface electrode layers at two ends of the resistor layer, and the radiating bottom plate is welded to the back metallization layer of the ceramic substrate.
(8) And (3) uniformly coating the silicon rubber on the welded encapsulating layer, and curing. The silicon rubber material is room temperature vulcanized silicon rubber and has excellent insulating property and good thermal conductivity.
(9) Preheating before plastic package, and then placing the plastic package mold into a plastic package mold for mold pressing and plastic package. The plastic packaging material is made of a thermosetting insulating material and has high heat resistance and good heat dissipation.
(10) And carrying out end face tinning treatment on the tail ends of the plurality of metal pins and the heat dissipation bottom plate.
When the central temperature of a bottom plate is not more than 70 ℃, the rated power can reach 35W, and the insulation voltage-resistant capability is 1800 VAC; the silicon rubber has excellent insulating property, and can prevent carbonization of the encapsulating layer material and the plastic package material caused by overhigh temperature rise of the resistance layer or carbonization of the encapsulating layer material and the plastic package material caused by electric arcs generated by overload and open circuit of the resistance layer, so that the failure mode of resistance reduction or short circuit of the resistor is caused. Meanwhile, the material has good thermal conductivity.
Compared with the prior art, the resistor has the advantages that the rated power redundancy of the resistor is improved by optimizing the noninductive structure design, the reliability of welding points and a resistance layer is ensured, the welding area meets the requirement of high penetration rate, the reliability of the resistor is improved, and the resistor achieves the optimal heat dissipation performance by directly welding or installing the lower surface of the heat dissipation bottom plate on the heat dissipation surface. When the resistor is subjected to overload pulse power energy, stable open circuit can be realized, the phenomenon that an encapsulating layer and a plastic packaging material are carbonized to cause a failure mode that the resistance value of the resistor is reduced or short circuit of the resistor is caused is prevented, a protection effect is achieved on an electronic system applied by the resistor, and the resistor can be widely applied to a highly reliable and miniaturized electronic system.
Drawings
Fig. 1 is a schematic structural diagram of a heat dissipation type non-inductive thick film power resistor according to the present invention.
In the figure: the structure comprises a heat dissipation base plate 1, a heat dissipation base plate extension 101, a surface transverse groove 102, a surface longitudinal groove 103, an extension groove 104, a ceramic substrate 2, a surface electrode layer 201, a thick film resistor layer 202, a substrate back metallization layer 203, an encapsulation layer 3, a silicon rubber layer 4, a plastic package shell 5, a first metal pin 6 and a second metal pin 7.
Detailed Description
In order to achieve the purpose, the radiating bottom plate and the plurality of metal pin materials are nickel-plated red copper, the ceramic substrate is a 96% alumina ceramic substrate, the surface electrode layer and the substrate back metallization layer are silver-palladium slurry, the thick film resistance layer is ruthenium slurry, the encapsulating layer is glass slurry, the silicon rubber layer is vulcanized silicon rubber, and the plastic package shell is a thermosetting insulating material. The technical solution of the present invention will be further described with reference to the preferred embodiments.
Example 1:
(1) a ceramic substrate having a length of 8.0mm, a width of 5.5mm and a thickness of 0.635mm was selected.
(2) And printing a surface electrode layer on the surface of the ceramic substrate, and printing a back metallization layer on the back of the ceramic substrate. And drying the ceramic substrate printed with the surface electrode layer and the back metallization layer, wherein the dry film thickness of the surface electrode layer is (24 +/-3) mu m, and the dry film thickness of the back metallization layer is (15 +/-3) mu m after drying. And sintering the ceramic substrate with the printed surface electrode layer and the back metallization layer at 830-870 ℃ for 8-15 min.
(3) And printing a resistance layer on the sintered ceramic substrate, wherein the resistance layer is lapped between the electrode layers on the two end surfaces of the ceramic substrate. And drying the ceramic substrate printed with the resistance layer, wherein the dry film thickness of the resistance layer is (36 +/-5) mu m. And sintering the ceramic substrate printed with the resistance layer at 830-870 ℃ for 8-15 min, and after sintering, correcting the resistance value by laser.
(4) Printing an encapsulating layer on the resistance layer after resistance correction to ensure that the encapsulating layer completely covers the resistance layer and part of the surface electrode layer, drying the encapsulating layer to the thickness of (80 +/-6) mu m, and then sintering at the temperature of (550-650) DEG for 8-15 min.
(5) Plating nickel (5-20) mu m thick and plating tin (5-20) mu m thick on the surface electrode layer and the back metallization layer of the ceramic substrate.
(6) Extension parts are respectively arranged on the left side and the right side of the head end of the heat dissipation bottom plate, and inner grooves are formed in the inner sides of the extension parts. The surface of the ceramic substrate welding area of the radiating bottom plate is provided with a plurality of transverse grooves or longitudinal grooves. The whole length of the heat dissipation bottom plate is 10.1mm, the width of the heat dissipation bottom plate is 8.4mm, and the thickness of the heat dissipation bottom plate is 1.0 mm. The heat dissipation base plate and the plurality of metal pins are made of red copper and are plated with nickel (5-8) mu m.
(7) The heat dissipation bottom plate, the ceramic substrate and the plurality of metal pins are sequentially placed in a laminated mode, welding areas between every two metal pins are evenly filled with soldering paste, vacuum eutectic welding is carried out through a special positioning welding fixture, the head ends of the plurality of metal pins are welded on surface electrode layers at two ends of a resistance layer, the heat dissipation bottom plate is welded on a metallization layer on the back of the ceramic substrate, the vacuum welding temperature is 300-360 ℃, the welding time is 50-90 s, and the penetration rate is larger than or equal to 99%.
(8) And uniformly coating the silicon rubber on the welded encapsulating layer, wherein the coating thickness of the silicon rubber is (0.7-1.2) mm, and curing the silicon rubber after the coating is finished for 24-36 h. The silicon rubber material is room temperature vulcanized silicon rubber.
(9) Preheating treatment is carried out before plastic packaging, wherein the preheating temperature is 190 +/-5 ℃, the preheating time is 1-2 min, then the plastic packaging mold is placed into a plastic packaging mold for mold pressing plastic packaging, and the plastic packaging temperature is 180-200 ℃, and the plastic packaging time is 2-3 min. The plastic packaging material is made of a thermosetting insulating material.
(10) And tinning the tail ends of the plurality of metal pins and the heat dissipation bottom plate after plastic packaging, wherein the tinning thickness is 5-20 mu m.
Example 2:
the dimensions of the ceramic substrate were selected as: the length is 6.4mm, the width is 5.10mm, and the thickness is 1.0 mm.
The size of the radiating bottom plate is selected as follows: the length is 7.0mm, the width is 6.35mm, and the thickness is 1.0 mm.
The other process steps and process conditions were the same as in example 1.
The heat dissipation type non-inductive thick film power resistor as in embodiment 2 has a rated power of 35W and an insulation withstand voltage of 2000VAC when the central temperature of the substrate is not more than 70 ℃.
The foregoing is considered as illustrative only of the principles and preferred embodiments of the invention. It should be understood that any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A heat dissipation type non-inductive thick film power resistor is characterized by comprising: the device comprises a radiating bottom plate, a radiating bottom plate extension part, a ceramic substrate, a surface electrode layer, a thick film resistor layer, a substrate back metallization layer, an encapsulating layer, a silicon rubber layer, a plastic package shell and a plurality of metal pins;
the heat dissipation base plate extension parts are positioned at two sides of one end of the heat dissipation base plate, and extension part grooves are formed in the inner sides of the heat dissipation base plate extension parts; the surface of a ceramic substrate welding area of the radiating bottom plate is provided with a plurality of transverse grooves or longitudinal grooves;
the upper surface of the ceramic substrate is sequentially provided with a surface electrode layer and a thick film resistor layer, and the back surface of the ceramic substrate is provided with a back surface metallization layer;
the encapsulating layer covers the whole thick film resistor layer and part of the surface electrode layer;
the plurality of metal pins comprise a first metal pin and a second metal pin, and the head ends of the first metal pin and the second metal pin are respectively welded on the surface electrode layers at the two ends of the resistance layer through high-temperature-resistant solders;
the silicon rubber layer covers the whole encapsulating layer, and the other surface electrode layers which are not covered by the encapsulating layer;
the plastic package shell is the outermost layer.
2. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the heat dissipation bottom plate and the plurality of metal pins are made of nickel-plated red copper, the heat dissipation effect is good, the strength is high, the heat dissipation bottom plate and the plurality of metal pins are integrally formed through stamping and have good smoothness, and the heat dissipation performance is further improved through the plurality of transverse grooves or the plurality of longitudinal grooves.
3. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the ceramic substrate is a 96% alumina ceramic substrate, the surface electrode layer and the substrate back metallization layer are formed by sintering silver-palladium slurry, and the thick film resistance layer is formed by sintering ruthenium slurry.
4. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the encapsulating layer is formed by sintering glass slurry, and the silicon rubber layer is formed by curing vulcanized silicon rubber.
5. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the plastic package shell is formed by injection molding of a thermosetting insulating material.
6. The method of claim 1, further comprising the steps of:
(1) preparing a ceramic substrate;
(2) printing a surface electrode layer on the surface of the ceramic substrate, and printing a back metallization layer on the back of the ceramic substrate; drying the ceramic substrate printed with the surface electrode layer and the back metallization layer, and sintering the ceramic substrate printed with the surface electrode layer and the back metallization layer after drying;
(3) printing a thick film resistor layer on the sintered ceramic substrate, overlapping the thick film resistor layer between the surface electrode layers at two ends of the ceramic substrate, drying the ceramic substrate printed with the resistor layer, sintering the ceramic substrate printed with the thick film resistor layer, and correcting the resistance value by laser after sintering;
(4) printing an encapsulating layer on the resistance layer after resistance correction, drying the encapsulating layer, and then sintering to ensure that the encapsulating layer completely covers the resistance layer and part of the surface electrode layer;
(5) carrying out nickel plating and tin plating end face treatment on the ceramic substrate;
(6) preparing a heat dissipation bottom plate with extension parts respectively arranged at the left side and the right side of the head end;
(7) sequentially laminating a radiating bottom plate, a ceramic substrate with a surface electrode layer, a back metallization layer and a thick film resistor layer, and a plurality of metal pins, uniformly filling soldering paste in a welding area between every two ceramic substrates, performing vacuum eutectic welding through a special positioning welding fixture, welding the head ends of the plurality of metal pins on the surface electrode layers at two ends of the resistor layer, and welding the radiating bottom plate on the back metallization layer of the ceramic substrate;
(8) uniformly coating room temperature vulcanized silicone rubber on the welded encapsulating layer, and curing;
(9) preheating before plastic packaging, and then placing the plastic packaging mold into a plastic packaging mold for mold pressing and plastic packaging;
(10) and carrying out end face tinning treatment on the tail ends of the plurality of metal pins and the heat dissipation bottom plate.
7. The method of claim 6, wherein the method comprises:
(1) selecting a ceramic substrate with the length of 8.0mm, the width of 5.5mm and the thickness of 0.635 mm;
(2) printing a surface electrode layer on the surface of the ceramic substrate, printing a back metallization layer on the back of the ceramic substrate, drying the ceramic substrate after the surface electrode layer and the back metallization layer are printed, wherein the dried film thickness of the surface electrode layer is 24 +/-3 mu m after drying, and the dried film thickness of the back metallization layer is 15 +/-3 mu m; sintering the ceramic substrate printed with the surface electrode layer and the back metallization layer at 830-870 ℃ for 8-15 min;
(3) printing a resistance layer on the sintered ceramic substrate, wherein the resistance layer is lapped between the electrode layers on the two end surfaces of the ceramic substrate; drying the ceramic substrate printed with the resistance layer, wherein the thickness of the dry film of the resistance layer is 36 +/-5 mu m; sintering the ceramic substrate printed with the resistance layer for 8-15 min at 830-870 ℃; after sintering, correcting the resistance value by laser;
(4) printing an encapsulating layer on the resistance layer with the corrected resistance value to ensure that the encapsulating layer completely covers the resistance layer and part of the surface electrode layer, drying the encapsulating layer to the thickness of 80 +/-6 microns, and then sintering for 8-15 min at the temperature of 550-650 ℃;
(5) plating nickel 5-20 μm thick and tin 5-20 μm thick on the surface electrode layer and the back metallization layer of the ceramic substrate;
(6) preparing a heat dissipation bottom plate, wherein the left side and the right side of the head end of the heat dissipation bottom plate are respectively provided with an extension part, and the inner side of the extension part is provided with an inner groove; the surface of a ceramic substrate welding area of the radiating bottom plate is provided with a plurality of transverse grooves or longitudinal grooves; the whole length of the heat dissipation bottom plate is 10.1mm, the width of the heat dissipation bottom plate is 8.4mm, and the thickness of the heat dissipation bottom plate is 1.0 mm;
(7) sequentially laminating a radiating bottom plate, a ceramic substrate and a plurality of metal pins, uniformly filling soldering paste in a welding area between every two radiating bottom plates, performing vacuum eutectic welding by using a special positioning welding fixture, welding the head ends of the plurality of metal pins on surface electrode layers at two ends of a resistor layer, welding the radiating bottom plate on a metalized layer on the back surface of the ceramic substrate, wherein the vacuum welding temperature is 300-360 ℃, and the welding time is 50-90 s;
(8) uniformly coating silicon rubber on the welded encapsulating layer, wherein the coating thickness of the silicon rubber is 0.7-1.2 mm, and curing at room temperature for 24-36 hours after coating;
(9) preheating treatment before plastic packaging, wherein the preheating temperature is 190 +/-5 ℃, the preheating time is 1-2 min, then placing the mixture into a plastic packaging mold for mold pressing and plastic packaging, the plastic packaging temperature is 180-200 ℃, and the plastic packaging time is 2-3 min;
(10) and tinning the tail ends of the plurality of metal pins and the heat dissipation bottom plate after plastic packaging, wherein the tinning thickness is 5-20 mu m.
8. The method of claim 6, wherein the method comprises: the ceramic substrate has the following dimensions: the length is 6.4mm, the width is 5.10mm, and the thickness is 1.0 mm.
9. The method of claim 6, wherein the method comprises: the size of the heat dissipation bottom plate is as follows: the length is 7.0mm, the width is 6.35mm, and the thickness is 1.0 mm.
10. The method of claim 6, wherein the method comprises: the nickel plating thickness of the heat dissipation base plate and the plurality of metal pins is 5-8 mu m.
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| CN208385108U (en) * | 2018-05-25 | 2019-01-15 | 广东意杰科技有限公司 | A kind of heat dissipation type plane thick film power resistor |
| CN210896819U (en) * | 2019-06-13 | 2020-06-30 | 深圳意杰（Ebg）电子有限公司 | Medium power resistor with temperature protection |
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- 2020-12-18 CN CN202011511969.7A patent/CN112712951A/en active Pending
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| CN101866861A (en) * | 2010-05-07 | 2010-10-20 | 贵州振华风光半导体有限公司 | Integration method of high-reliability power hybrid integrated circuit |
| CN102496436A (en) * | 2011-12-12 | 2012-06-13 | 中国振华集团云科电子有限公司 | Method for manufacturing large-power thick-diaphragm resistor |
| CN103050205A (en) * | 2012-12-19 | 2013-04-17 | 中国振华集团云科电子有限公司 | Manufacturing method for radio frequency power resistor |
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| CN208385108U (en) * | 2018-05-25 | 2019-01-15 | 广东意杰科技有限公司 | A kind of heat dissipation type plane thick film power resistor |
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Application publication date: 20210427 |