CN213988456U - Heat dissipation type non-inductive thick film power resistor - Google Patents
Heat dissipation type non-inductive thick film power resistor Download PDFInfo
- Publication number
- CN213988456U CN213988456U CN202023076632.6U CN202023076632U CN213988456U CN 213988456 U CN213988456 U CN 213988456U CN 202023076632 U CN202023076632 U CN 202023076632U CN 213988456 U CN213988456 U CN 213988456U
- Authority
- CN
- China
- Prior art keywords
- layer
- thick film
- heat dissipation
- resistor
- surface electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Details Of Resistors (AREA)
Abstract
A heat dissipating, non-inductive thick film power resistor comprising: the heat dissipation substrate comprises a heat dissipation bottom plate, a ceramic substrate, a surface electrode layer, a thick film resistor layer, a back metallization layer, an encapsulating layer, a silicon rubber layer, a plastic package shell and a plurality of metal pins. The surface of a ceramic substrate welding area of the radiating bottom plate is provided with a plurality of grooves; the upper surface of the ceramic substrate is sequentially provided with a surface electrode layer and a thick film resistor layer, and the back surface of the ceramic substrate is provided with a metallization layer; the packaging layer covers the whole thick film resistor layer and part of the surface electrode layer; the plurality of metal pins comprise a first metal pin and a second metal pin, and the head ends of the first metal pin and the second metal pin are respectively welded on the surface electrode layers at the two ends of the resistance layer through high-temperature-resistant solders; the silicon rubber layer covers the whole encapsulating layer, and the other surface electrode layers which are not covered by the encapsulating layer; the plastic package shell is the outermost layer. The problems of small redundancy of rated power, insufficient strong pulse resistance and the like of the existing resistor are solved. The method is widely applied to high-reliability and miniaturized electronic systems.
Description
Technical Field
The utility model belongs to the electronic components field particularly, belongs to the resistor field, and further say, belongs to thick film power resistor field.
Background
At present, with the rapid development of high reliability and miniaturization of electronic systems, especially in high-power and high-frequency electronic module parts, involving a large number of heat dissipation and shielding systems, the high reliability and miniaturization degree of electronic systems are determined, and the use of high-power and small-volume resistors is more and more common, and the performance requirements of the resistors are also more and more high. In this application, the metal resistor, such as a metal wire, a foil or a sheet, has excellent pulse resistance, but the larger the power requirement, the larger the volume, and the larger the inherent inductance value, which cannot satisfy the application requirements of miniaturization, high power, high frequency and interference resistance. In order to simplify an additional heat dissipation system as much as possible and improve the reliability of the system, the use of a direct-tape heat dissipation type thick film power resistor is becoming more common. In the prior art, the main structure of the heat dissipation type thick film power resistor of the same type is a planar heat dissipation bottom plate, a ceramic substrate, an electrode layer, a resistance layer, an encapsulation layer and a plurality of metal pins, and because the structure of the resistor is not perfect enough, the heat dissipation capability, the specific power and the anti-pulse performance of the resistor with the same volume are not enough, when the resistor is subjected to overload pulse power energy, the resistor cannot be opened in time, and the electronic system is adversely affected.
In view of this, the present invention is especially provided.
Disclosure of Invention
The utility model aims at: the resistor solves the problems of insufficient heat dissipation capacity, small rated power redundancy, insufficient strong pulse load resistance and the like of the existing resistor.
To solve this problem, the general concept of the present invention is: a silicone rubber layer is added between the encapsulating layer and the plastic encapsulating layer so as to improve the overload stable open circuit capability of the resistance layer and the heat dissipation capability of the top of the packaging body; a plurality of metal pins are uniformly welded on the surface electrode layers at two ends of the resistance layer, so that the heat dissipation capacity is improved; the back of the ceramic substrate is provided with the metallization layer, so that the ceramic substrate and the radiating bottom plate are in compact contact with each other, and the heat transmission capability of the middle part of the packaging body is improved; and the bonding surface of the ceramic substrate and the planar radiating bottom plate with a plurality of grooves on the surface are adopted, so that the penetration rate is ensured and the bottom radiating capacity of the packaging body is increased when the radiating bottom plate is welded with the metallization layer on the back surface of the ceramic substrate.
Therefore, the utility model provides a heat dissipation formula noninductive thick film power resistor, the schematic structure is shown in FIG. 1, include: the heat radiation base plate comprises a heat radiation base plate 1, a heat radiation base plate extension part 101, a surface transverse groove 102, a surface longitudinal groove 103, an extension part groove 104, a ceramic substrate 2, a surface electrode layer 201, a thick film resistor layer 202, a substrate back metallization layer 203, an encapsulating layer 3, a silicon rubber layer 4, a plastic package shell 5, a first metal pin 6 and a second metal pin 7.
Two sides of one end of the heat dissipation base plate 1 are provided with heat dissipation base plate extension parts 101 so as to increase the heat dissipation area of the heat dissipation base plate; the ceramic substrate welding area of the radiating bottom plate 1 is provided with a surface transverse groove 102 or a surface longitudinal groove 103, so that when the radiating bottom plate is welded with a metal layer on the back of the ceramic substrate, the radiating bottom plate can be well positioned and welded, and the welding flux is controlled to meet the welding requirement of high penetration rate, so that the resistor achieves the optimal radiating performance, and the rated power redundancy of the resistor is ensured by the structure; the inner side of the heat dissipation base plate extension part 101 is provided with an extension part groove 104, so that the injection molding insulating material and the heat dissipation base plate are combined more firmly when the injection molding insulating material is injected.
The upper surface of the ceramic substrate 2 is sequentially provided with a surface electrode layer 201 and a thick film resistor layer 202, and the back surface of the ceramic substrate 2 is provided with a back surface metallization layer 203.
The encapsulating layer 3 covers the entire thick film resistive layer 202 and a portion of the surface electrode layer 201.
The resistor is characterized in that the first metal pins 6 and the second metal pins 7 form a plurality of metal pins, the head ends of the first metal pins 6 and the second metal pins 7 are respectively welded on the surface electrode layers 201 at two ends of the resistance layer through high-temperature-resistant solders, the tail ends of the first metal pins 6 and the second metal pins 7 are used as leading-out ends and are welded on other devices through universal tin, the melting point of tin used for the head ends of the first metal pins 6 and the second metal pins 7 is higher than that of tin used for the tail ends of the first metal pins 6 and the second metal pins 7, and the reliability of the resistor is fully guaranteed.
The silicone rubber layer 4 covers the whole of the encapsulating layer 3, and the encapsulating layer 3 does not cover the rest of the surface electrode layer 201.
The plastic package shell 5 is the outermost layer.
When the central temperature of a bottom plate is not more than 70 ℃, the rated power can reach 35W, and the insulation voltage-resistant capability is 1800 VAC; the silicon rubber has excellent insulating property, and can prevent carbonization of the encapsulating layer material and the plastic package material caused by overhigh temperature rise of the resistance layer or carbonization of the encapsulating layer material and the plastic package material caused by electric arcs generated by overload and open circuit of the resistance layer, so that the failure mode of resistance reduction or short circuit of the resistor is caused. Meanwhile, the material has good thermal conductivity.
Compared with the prior art, the resistor has the advantages that the rated power redundancy of the resistor is improved by optimizing the noninductive structure design, the reliability of welding points and a resistance layer is ensured, the welding area meets the requirement of high penetration rate, the reliability of the resistor is improved, and the resistor achieves the optimal heat dissipation performance by directly welding or installing the lower surface of the heat dissipation bottom plate on the heat dissipation surface. When the resistor is subjected to overload pulse power energy, stable open circuit can be realized, the phenomenon that an encapsulating layer and a plastic packaging material are carbonized to cause a failure mode that the resistance value of the resistor is reduced or short circuit of the resistor is caused is prevented, a protection effect is achieved on an electronic system applied by the resistor, and the resistor can be widely applied to a highly reliable and miniaturized electronic system.
Drawings
Fig. 1 is a schematic structural diagram of the heat dissipation type non-inductive thick film power resistor of the present invention.
In the figure: the structure comprises a heat dissipation base plate 1, a heat dissipation base plate extension 101, a surface transverse groove 102, a surface longitudinal groove 103, an extension groove 104, a ceramic substrate 2, a surface electrode layer 201, a thick film resistor layer 202, a substrate back metallization layer 203, an encapsulation layer 3, a silicon rubber layer 4, a plastic package shell 5, a first metal pin 6 and a second metal pin 7.
Detailed Description
As shown in fig. 1:
the heat dissipation base plates (1, 101) and the plurality of metal pins (6, 7) are made of nickel-plated red copper, and have good weldability and heat conductivity.
The ceramic substrate is a 96% alumina ceramic substrate;
the surface electrode and the back electrode are made of silver palladium slurry by sintering;
the thick film resistance layer is made of ruthenium slurry by sintering;
the encapsulating layer is formed by sintering glass slurry;
the silicone rubber layer is formed by curing vulcanized silicone rubber, and has good heat-conducting property.
The plastic package shell 5 is formed by injection molding of a thermosetting insulating material, has high heat resistance and good heat conductivity, and further improves the reliability of the resistor.
In addition, according to the shape and the size of product, the utility model provides a structural model of heat dissipation formula noninductive thick film power resistor, among the concrete implementation process, be not limited to the specific shape of this embodiment, can carry out reasonable deformation, equivalence replacement and improvement etc. to each part according to the specific shape and the size of each part, all belong to the utility model discloses the scope of protecting.
Claims (9)
1. A heat dissipation type non-inductive thick film power resistor is characterized by comprising: the device comprises a radiating bottom plate, a radiating bottom plate extension part, a ceramic substrate, a surface electrode layer, a thick film resistor layer, a substrate back metallization layer, an encapsulating layer, a silicon rubber layer, a plastic package shell and a plurality of metal pins;
the heat dissipation base plate extension parts are positioned at two sides of one end of the heat dissipation base plate, and extension part grooves are formed in the inner sides of the heat dissipation base plate extension parts; the surface of a ceramic substrate welding area of the radiating bottom plate is provided with a plurality of transverse grooves or longitudinal grooves;
the upper surface of the ceramic substrate is sequentially provided with a surface electrode layer and a thick film resistor layer, and the back surface of the ceramic substrate is provided with a back surface metallization layer;
the encapsulating layer covers the whole thick film resistor layer and part of the surface electrode layer;
the plurality of metal pins comprise a first metal pin and a second metal pin, and the head ends of the first metal pin and the second metal pin are respectively welded on the surface electrode layers at the two ends of the resistance layer through high-temperature-resistant solders;
the silicon rubber layer covers the whole encapsulating layer, and the other surface electrode layers which are not covered by the encapsulating layer;
the plastic package shell is the outermost layer.
2. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: and the two sides of one end of the heat dissipation bottom plate are provided with heat dissipation bottom plate extension parts.
3. The heat dissipating, non-inductive thick film power resistor of claim 2, wherein: an extension part groove is formed in the inner side of the extension part of the heat dissipation base plate.
4. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the ceramic substrate welding area of the radiating bottom plate is provided with a surface transverse groove or a surface longitudinal groove.
5. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the heat dissipation bottom plate and the plurality of metal pins are made of nickel-plated red copper.
6. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the surface electrode layer and the substrate back metallization layer are formed by sintering silver-palladium slurry.
7. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the thick film resistor layer is formed by sintering ruthenium slurry.
8. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the encapsulating layer is formed by sintering glass slurry.
9. The heat dissipating, non-inductive thick film power resistor of claim 1, wherein: the silicone rubber layer is formed by curing vulcanized silicone rubber, and the plastic package shell is formed by injection molding of a thermosetting insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023076632.6U CN213988456U (en) | 2020-12-18 | 2020-12-18 | Heat dissipation type non-inductive thick film power resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023076632.6U CN213988456U (en) | 2020-12-18 | 2020-12-18 | Heat dissipation type non-inductive thick film power resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213988456U true CN213988456U (en) | 2021-08-17 |
Family
ID=77245799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023076632.6U Active CN213988456U (en) | 2020-12-18 | 2020-12-18 | Heat dissipation type non-inductive thick film power resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213988456U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936211A (en) * | 2023-08-15 | 2023-10-24 | 广东正鸿电子科技有限公司 | Planar thick film power resistor and production process thereof |
-
2020
- 2020-12-18 CN CN202023076632.6U patent/CN213988456U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116936211A (en) * | 2023-08-15 | 2023-10-24 | 广东正鸿电子科技有限公司 | Planar thick film power resistor and production process thereof |
| CN116936211B (en) * | 2023-08-15 | 2024-01-30 | 广东正鸿电子科技有限公司 | Planar thick film power resistor and production process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9324684B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN100562999C (en) | Circuit module | |
| CN114743947B (en) | TO-form-based power device packaging structure and packaging method | |
| CN213988456U (en) | Heat dissipation type non-inductive thick film power resistor | |
| CN112271165A (en) | Semiconductor packaging structure, manufacturing method thereof and semiconductor device | |
| CN210897260U (en) | Novel packaged discrete device | |
| CN214411191U (en) | Serial-type high-power diode | |
| CN115064512A (en) | Double-sided heat dissipation high-frequency high-power module and manufacturing method thereof | |
| CN212113708U (en) | Paster frame of high-power semiconductor device and package thereof | |
| CN211350619U (en) | Double-sided heat dissipation power module | |
| CN108878391A (en) | intelligent power module structure and manufacturing method thereof | |
| CN210379025U (en) | Power device packaging structure | |
| CN112712951A (en) | Heat dissipation type non-inductive thick film power resistor and manufacturing method thereof | |
| CN110854096A (en) | Novel packaged discrete device | |
| CN112490234A (en) | Intelligent power module and manufacturing method thereof | |
| KR20220015220A (en) | Power module and manufacturing method thereof | |
| KR20220004442A (en) | Power module | |
| CN219832657U (en) | Packaging structure of laminated chip | |
| JP3277751B2 (en) | Flat semiconductor device and method of manufacturing the same | |
| CN219144254U (en) | Heavy-current battery protection plate and heavy-current battery | |
| CN210349819U (en) | Power device module | |
| CN214705927U (en) | Intelligent power module | |
| CN115732450B (en) | Novel high-density packaging structure of power module and manufacturing method thereof | |
| CN213401158U (en) | Miniaturized protection chip of special 5G base station antenna | |
| CN216054694U (en) | Chip packaged by ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |