CN110230043A - The preparation method of chemical vapor deposition device, ceramic heat disk and ceramic heat disk - Google Patents
The preparation method of chemical vapor deposition device, ceramic heat disk and ceramic heat disk Download PDFInfo
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- CN110230043A CN110230043A CN201910411519.1A CN201910411519A CN110230043A CN 110230043 A CN110230043 A CN 110230043A CN 201910411519 A CN201910411519 A CN 201910411519A CN 110230043 A CN110230043 A CN 110230043A
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Abstract
The present invention provides the preparation method of a kind of chemical vapor deposition device, ceramic heat disk and ceramic heat disk.The ceramic heat disk includes heating disk body, ceramic tube, and heating disk body includes the first aluminum nitride ceramic substrate, heating sheet and the second aluminum nitride ceramic substrate being cascading from the bottom to top；It is bonded between each layer by thermal conductive ceramic slurry, forms one after sintering；The thermal conductivity of the first ceramic body of gained is lower than the thermal conductivity of the second ceramic body.Chemical vapor deposition device includes the ceramic heat disk.The preparation method of ceramic heat disk, including the first aluminum nitride ceramic substrate, heating sheet, the second aluminum nitride ceramic substrate, electrode plate and third aluminum nitride ceramic substrate are passed sequentially through into ceramic slurry bonding, heating disk body is obtained by hot pressed sintering.The heat that heating sheet of the present invention generates is most to be communicated up, so that the setting of heating dish overall electrical resistance is simpler and easy to operate, reduces disturbing factor, can preferably control temperature in wafer etching or deposition process.
Description
Technical field
The invention belongs to semiconductor application fields, are related to semiconductor manufacturing facility, more specifically to a kind of chemical gas
The preparation method of phase deposition apparatus, ceramic heat disk and ceramic heat disk.
Background technique
Chemical vapor deposition device (Chemical VaporDeposition equipment, abbreviation CVD equipment) is semiconductor core
The key equipment of piece production, the key problem of CVD equipment is how to guarantee the uniformity and repeatability of Material growth, chip heating
Resistance to matrix corrosion of the uniformity of temperature and heating dish material etc. is all as a structure in CVD equipment, when heating for disk
It will have a direct impact on the uniformity and repeatability of chip growth.
Existing ceramic heat disk is broadly divided into aluminium oxide ceramics heating dish and aluminium nitride ceramics heating dish.Aluminium oxide pottery
Porcelain heating dish is manufactured with thick film cofiring method, and aluminium nitride ceramics heating dish is manufactured with pressure sintering.Aluminium nitride ceramics has not by molten aluminum
The characteristic corroded with other molten metals and GaAs, especially has fabulous erosion resisting to molten aluminum liquid.And it nitrogenizes
Aluminium ceramics have the heat transfer efficiency of superelevation, are 5 times of aluminium oxide ceramics or more.
Since the heat transfer efficiency of aluminium oxide ceramics heating dish is low, cause in production actually to the heating temperature of product, with behaviour
The quasi- heating temperature provided of control person has different, therefore in the manufacturing to the more stringent product of temperature requirement, changes
It learns and generallys use the higher aluminium nitride ceramics heating dish of heat transfer efficiency on vapor deposition device.But existing aluminium nitride ceramics heating
The heat conduction efficiency of disk and the uniformity heated to wafer thereon need to be improved.
Summary of the invention
One of the objects of the present invention is to provide a kind of ceramic heat disks, can preferably control temperature in etching or deposition process
Degree guarantees the uniformity of wafer bulk temperature.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of ceramic heat disk, including heating disk body, ceramic tube, the heating disk body include stacking gradually to set from the bottom to top
The first aluminum nitride ceramic substrate, heating sheet and the second aluminum nitride ceramic substrate set；The heating sheet and first aluminium nitride
There is thermal conductive ceramic slurry between ceramic substrate；There is thermal conductive ceramic slurry between the heating sheet and second aluminum nitride ceramic substrate
Material；First aluminum nitride ceramic substrate, the heating sheet and second aluminum nitride ceramic substrate are fixed into through oversintering
It is integrated；First aluminum nitride ceramic substrate and adjacent thermal conductive ceramic slurry sintering after formed the first ceramic body it is thermally conductive
Rate is thermally conductive lower than the second ceramic body formed after second aluminum nitride ceramic substrate and adjacent thermal conductive ceramic slurry sintering
Rate.
Preferably, the heating disk body and ceramic tube are sintered to fix by thermal conductive ceramic slurry bonding.
Preferably, the thermal conductive ceramic slurry between the heating sheet and first aluminum nitride ceramic substrate is low leads
Thermal Ceramics slurry.
Preferably, the thermal conductive ceramic slurry between the heating sheet and second aluminum nitride ceramic substrate is led for height
Thermal Ceramics slurry.
Preferably, the low thermal conductive ceramic slurry and first aluminum nitride ceramic substrate are identical materials.
Preferably, the high heat-conducting ceramic slurry and second aluminum nitride ceramic substrate are identical materials.
Preferably, being cascading above second aluminum nitride ceramic substrate has electrode plate and third ceramic body, institute
It states electrode plate and is connected with the grounding electrode that main body is located in the ceramic tube.
Preferably, the thermal conductivity of the third ceramic body is higher than the thermal conductivity of first ceramic body.
Preferably, the thermal conductivity of the third ceramic body is higher than the thermal conductivity of second ceramic body.
Preferably, second ceramic body, the third ceramic body thermal conductivity be 150-200W/ (mK)；Described
The thermal conductivity of one ceramic body is 10-70W/ (mK).
Preferably, the heating sheet is resistance slurry, molybdenum sheet, leaf.
Preferably, the lower surface of the heating sheet connects two main bodys and is located at the heating electrode in the ceramic tube, and two
The heating electrode is connected to the positive and negative anodes of external power supply, forms heating circuit.
Preferably, it uses and is threadedly coupled between the heating electrode and the heating disk body.
Preferably, connector is equipped between the heating electrode and the heating sheet, the connector is made of molybdenum or tungsten.
Preferably, the weld is in the heating sheet.
Preferably, gasket is provided between the heating electrode and the corresponding connector, the gasket is by gold, platinum or iron
Cobalt-nickel alloy is made.
Preferably, it uses and is threadedly coupled between the grounding electrode and the heating disk body.
Preferably, connector is equipped between the electrode plate and grounding electrode, the connector is made of molybdenum or tungsten.
Preferably, gasket is equipped between the grounding electrode and the corresponding connector, the gasket is by gold, platinum or iron cobalt
Nickel alloy is made.
Preferably, the electrode plate is woven by Heat Conduction Material.
Preferably, the electrode plate is to be made from a material that be thermally conductive and which is provided with several punchings.
Preferably, be equipped with mounting groove below first aluminum nitride ceramic substrate, one end of the ceramic tube be equipped with
The matched protrusion of mounting groove；The low thermal conductive ceramic slurry is coated between the end face and the mounting groove of the protrusion.
Preferably, the low thermal conductive ceramic slurry includes following component by weight:
Aluminum nitride powder, 70-80 parts；Additive, 65-95 parts；Organic carrier, 10-25 parts；Coupling agent, 0.5-3 parts.
Preferably, the high heat-conducting ceramic slurry includes following component by weight:
Aluminum nitride powder, 70-80 parts；Additive, 5-15 parts；Organic carrier, 10-25 parts；Coupling agent, 0.5-3 parts；It is described to add
Adding agent is the combination of one or more of yttrium oxide, calcium oxide, magnesia.
Invention additionally discloses a kind of chemical vapor deposition devices including above-mentioned ceramic heat disk.
To achieve the goals above, the present invention also provides a kind of preparation method of above-mentioned ceramic heat disk, including it is following
Step:
Production heating disk body: by the first aluminum nitride ceramic substrate, heating sheet, the second aluminum nitride ceramic substrate, electrode plate and
Third aluminum nitride ceramic substrate passes sequentially through ceramic slurry bonding, forming layer structure；Wherein, the first aluminum nitride ceramic substrate and plus
It is bonded between backing using low thermal conductive ceramic slurry, heating sheet, the second aluminum nitride ceramic substrate, electrode plate and third aluminium nitride pottery
It is bonded between porcelain substrate using high heat-conducting ceramic slurry；The thermal conductivity of first aluminum nitride ceramic substrate is less than the second aluminium nitride ceramics
Substrate and third aluminum nitride ceramic substrate；
Layer structure is passed through into a hot pressed sintering, obtains heating disk body；
It will be bonded between ceramic tube and heating disk body by low thermal conductive ceramic slurry, be sintered by secondary hot pressing.
Preferably, the direction of exerting pressure of a hot pressed sintering is to act perpendicularly to layer knot along the thickness direction for heating disk body
Structure, applied force 10MPa-70MPa.
Preferably, the heating temperature of a hot pressed sintering is 1500 DEG C -1900 DEG C.
Preferably, the sintering time of a hot pressed sintering is 2h-5h.
It preferably, further include that will live through a hot pressed sintering before being integrally connected ceramic tube and heating disk body
The step of heating disk body is dried under the conditions of 80 DEG C -150 DEG C.
Preferably, the drying time is 3h-5h.
It preferably, further include the heating disk body that will be bonded together and ceramic tube drying before secondary hot pressing sintering.
Preferably, the condition of the drying dries 3h-5h under the conditions of being 80 DEG C -150 DEG C.
Preferably, the temperature of the secondary hot pressing sintering is 1500 DEG C -1700 DEG C.
Preferably, the time of the secondary hot pressing sintering is 1h-3h.
Preferably, the low thermal conductive ceramic slurry includes following component by weight:
Aluminum nitride powder, 70-80 parts；Additive, 65-95 parts；Organic carrier, 10-25 parts；Coupling agent, 0.5-3 parts.
Preferably, the high heat-conducting ceramic slurry includes following component by weight:
Aluminum nitride powder, 70-80 parts；Additive, 5-15 parts；Organic carrier, 10-25 parts；Coupling agent, 0.5-3 parts；It is described to add
Adding agent is the combination of one or more of yttrium oxide, calcium oxide, magnesia.
Preferably, the thermal conductivity of the low thermal conductive ceramic slurry is 10-70W/ (mK).
Preferably, the thermal conductivity of the high heat-conducting ceramic slurry is 150-200W/ (mK).
Preferably, further include the steps that grounding electrode is installed and heat electrode to ceramic heat disk body.
The beneficial effects of the present invention are:
Ceramic heat disk of the present invention by the way that the thermal conductivity of the first ceramic body to be set smaller than to the thermal conductivity of the second ceramic body,
The heat for enabling to heating sheet to generate passes through the second ceramic body as far as possible and transmits to third ceramic body, so that heating dish is whole
Resistance setting is simpler and easy to operate, reduces disturbing factor, can preferably control temperature in wafer etching or deposition process,
Guarantee the uniformity of wafer bulk temperature, guarantees that etching or deposition process stable and uniform are easily controllable, produce the product of high quality.
And the thermal conductivity of part is lower than the thermally conductive of the second ceramic body above heating sheet between ceramic tube and heating disk body
Rate can preferably prevent heat from conducting downwards along ceramic tube.
Further more, can have stress release since ceramic heat disk needs heating repeatedly to cool down in use,
The heating sheet as made of molybdenum or tungsten, the coefficient of expansion of electrode plate are different from the coefficient of expansion of electrode, if directlying adopt welding
Mode connect heating sheet and electrode, electrode plate and electrode, can pad easily be cracked.The present invention is made of molybdenum or tungsten
Connector, and connector is directly connect with heating sheet, electrode plate welding, due to connector with heating sheet, electrode plate using identical
Material is made, and the coefficient of expansion is identical, and pad is not easy to crack in heating temperature-fall period repeatedly, and extend heating dish uses the longevity
Life；And electrode is pressed on gasket on connector end face by the way of being threadedly coupled, so that gasket contacts more with connector, electrode
Step up it is close, connect it is more stable so that stabilization of equipment performance is more preferable, and connection type is simple, is quickly and expediently installed；Gasket be by
Gold, platinum or iron cobalt nickel alloy are made, and hardness is smaller, can be avoided electrode and connector directly contacts butt joint and causes to squeeze damage
Wound.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of one embodiment of ceramic heat disk of the present invention；
Fig. 2 is the schematic diagram of a layer structure of ceramic heat disk disk body of the present invention；
Fig. 3 is the structural schematic diagram of electrode plate made of weaving in an embodiment in the present invention；
Fig. 4 is the structural schematic diagram for the electrode plate that punching is formed in another embodiment in the present invention；
Fig. 5 is the partial enlargement diagram in Fig. 1 at I, it is shown that grounding electrode and heating electrode and the company for heating disk body
Binding structure；
Fig. 6 is the connection schematic diagram of one embodiment of the invention heating disk body and ceramic tube；
Fig. 7 is the partial enlargement diagram in Fig. 6 at II, it is shown that the connection structure of ceramic tube and heating disk body；
Fig. 8 is the structural schematic diagram that the ceramic tube mounting groove of disk body is heated in one embodiment of the invention；
Fig. 9 is the flow chart of the preparation method of ceramic heat disk of the present invention.
In figure:
1, disk body is heated；10, mounting groove；11, the first aluminum nitride ceramic substrate/first ceramic body；12, heating sheet；13,
Nitride aluminium ceramic substrate/the second ceramic body；14, electrode plate；15, third aluminum nitride ceramic substrate/third ceramic body；16, low
Thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics；17, high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics；
2, ceramic tube；21, raised；
31, grounding electrode；32, electrode is heated；
41, connector；42, gasket.
Specific embodiment
Below in conjunction with drawings and examples, a specific embodiment of the invention is described in more details, so as to energy
The advantages of enough more fully understanding the solution of the present invention and its various aspects.However, specific embodiments described below and implementation
Example is for illustrative purposes only, rather than limiting the invention.
Heretofore described " connection " unless otherwise specific regulation or is limited, should be broadly understood, can be directly
It is connected, is also possible to be connected by intermediary.In the description of the present invention, it is to be understood that, "upper", "lower", " preceding ",
The orientation or positional relationship of the instructions such as " rear ", "left", "right", " top ", " bottom end " is orientation based on the figure or position
Relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
There is specific orientation, be constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
The present invention provides a kind of ceramic heat disk, the chemical vapor deposition device including the ceramic heat disk, and should
The manufacturing method of ceramic heat disk.
As depicted in figs. 1 and 2, the aluminium nitride ceramics heating dish in the present embodiment includes heating disk body 1, and passes through nitrogen with it
Change aluminium ceramic slurry bonding and atmospheric hydrogen is sintered the ceramic tube 2 being integrated；Heating disk body 1 includes stacking gradually to set from the bottom to top
It sets, layer includes: the first aluminum nitride ceramic substrate 11, heating sheet 12, the second aluminum nitride ceramic substrate 13, electrode plate 14 and third nitrogen
Change aluminium ceramic substrate 15.It is bonded between each layer by Behavior of Slurry for Aluminum Nitride Ceramics, is integrated by high-temperature pressurizing sintering.
The present embodiment bonds each layer using Behavior of Slurry for Aluminum Nitride Ceramics, improves between heating disk body 1 and ceramic tube 2, heating dish
Adhesive property between the adjacent two layers of body 1 is more advantageous to and is integrated heating disk body 1 and the sintering of ceramic tube 2.
After oversintering, ceramic slurry is integrally formed with adjacent aluminum nitride ceramic substrate.Therefore, after sintering, the first nitrogen
Changing aluminium ceramic substrate and low thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics becomes the first ceramic body；Second aluminum nitride ceramic substrate and high thermal conductivity nitrogen
Changing aluminium ceramic slurry becomes the second ceramic body；Third aluminum nitride ceramic substrate and high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics are made pottery as third
Porcelain body.Due to the position of locating heating disc layer structure, sintered first ceramic body is still used and 11 is indicated in the present invention, the second ceramics
Body is still used and 13 is indicated, third ceramic body is still used and 15 indicated.
Wherein, the thermal conductivity of the first aluminum nitride ceramic substrate 11 less than the second aluminum nitride ceramic substrate 13 thermal conductivity,
The thermal conductivity of three aluminum nitride ceramic substrates 15 is equal to the thermal conductivity of the second aluminum nitride ceramic substrate 13.The heating sheet 12 of the present embodiment
Thermal conductive ceramic slurry between the first aluminum nitride ceramic substrate 11 uses low thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics 16, heating sheet 12 with
Thermal conductive ceramic slurry between second aluminum nitride ceramic substrate 13 uses high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics 17, as shown in Figure 2.Through
After oversintering, the thermal conductivity of the first ceramic body formed after the first aluminum nitride ceramic substrate and the sintering of adjacent thermal conductive ceramic slurry
Lower than the thermal conductivity of the second ceramic body formed after the second aluminum nitride ceramic substrate and adjacent thermal conductive ceramic slurry sintering.
Preferably, low thermal conductive ceramic slurry and the first aluminum nitride ceramic substrate use identical material, highly heat-conductive carbon/ceramic
Porcelain slurry and the second aluminum nitride ceramic substrate, third aluminum nitride ceramic substrate use identical material.
Preferably, the thermal conductivity of above-mentioned second aluminum nitride ceramic substrate 13 and third aluminum nitride ceramic substrate 15 is 150-
200W/ (mK), the thermal conductivity of the first aluminum nitride ceramic substrate 11 are 10-70W/ (mK).That is, low thermal conductive ceramic slurry and
The thermal conductivity of first ceramic body of the sintered formation of one aluminum nitride ceramic substrate 11 be 10-70W/ (mK), described second
Ceramic body, the third ceramic body thermal conductivity be 150-200W/ (mK).
Preferably, the thermal conductivity of third ceramic body can also be arranged to the thermal conductivity for being higher than the second ceramic body, more by heat
It is oriented to heating panel surface well.
In this way, the thermal conductivity of heating sheet ceramic body below of the present invention, thermally conductive lower than ceramic body more than heating sheet
Rate, the heat overwhelming majority that heating sheet is generated is communicated up, and the heat transmitted downwards is seldom, this to calculate and add
Backing generates and is transmitted to the heat of heating dish top surface, essentially identical with actual heat.The heat transmitted downwards from heating sheet
Amount is fewer, and the disturbing factor generated in control is fewer, the temperature of the product of heating more can be accurately controlled, to guarantee crystalline substance
The uniformity of rounding temperature guarantees that etching or deposition process stable and uniform are easily controllable, produces the product of high quality.
The present invention forms the first different nitridation of thermal conductivity by adding the additive of different content in aluminium nitride ceramics
Aluminium ceramic substrate 11 and the second aluminum nitride ceramic substrate 13, and the content of additive is higher, and thermal conductivity is lower.Second aluminium nitride
The thermal conductivity of ceramic substrate 13 is equal to the thermal conductivity of third aluminum nitride ceramic substrate 15, i.e. adds in the second aluminum nitride ceramic substrate 13
Add the content of agent equal with the content of additive in third aluminum nitride ceramic substrate 15.Wherein, additive refer to as yttrium oxide and/or
Calcium oxide and/or magnesia and/or lithia etc..Additive can also use other types, such as yttrium oxide and/or calcium oxide
And/or magnesia and/or lithia and/or yttrium fluoride and/or CaCl2 and/or calcium carbonate and/or strontium carbonate and/or lanthana
And/or cerium oxide and/or aluminium oxide and/or silica.Concrete composition and the content of each ingredient are not specifically limited, only
It need to guarantee that the thermal conductivity of each ceramic substrate is met the requirements, those of ordinary skill in the art can test by being repeated several times
The combination that meets the requirements is found to determine.
The small corresponding heat transfer performance of thermal conductivity is also poorer, and the energization of heating sheet 12 can generate heat, and heating sheet 12 is produced
Raw heat will be led upwards by the second aluminum nitride ceramic substrate 13, electrode plate 14 and third aluminum nitride ceramic substrate 15
Out, and by the way that the thermal conductivity of the first aluminum nitride ceramic substrate 11 is set smaller than the thermally conductive of the second aluminum nitride ceramic substrate 13
Rate, the heat for enabling to heating sheet 12 to generate pass through the second aluminum nitride ceramic substrate 13 to third aluminium nitride ceramics as far as possible
Substrate 15 transmits, and reduces through the downward derived heat of the first aluminum nitride ceramic substrate 11, in addition to above-mentioned reduction is interfered, temperature control essence
Except really, moreover it is possible to improve heat utilization efficiency, reduce thermal losses.And aluminium nitride ceramics itself has good resistance to corrosion,
The erosion of the plasma and other pernicious gases in semiconductor equipment can be resisted.
Above-mentioned electrode plate 14 is to be made from a material that be thermally conductive, such as tungsten, molybdenum, convenient for the transmitting of heat；As shown in figure 3, electrode plate
14 can be electrode plate 14 made of braiding；Be also possible to show such as Fig. 4 is formed by thin plate punching.Preferably, punching is selected
Manufactured electrode plate 14, i.e. electrode plate 14 are equipped with several punchings, by the way that several punchings are arranged, convenient for thermally conductive, avoid electrode plate
14 influence the transmitting of heat.As for the radial cross-sectional shape of punching, it can be the round or polygons such as rectangle, rectangular, hexagon.
Preferably, use radial section for the electrode plate 14 of hexagon, above-mentioned electrode plate 14 with a thickness of 0.2mm-0.5mm.
Before electrode plate 14 is bonded between the second aluminum nitride ceramic substrate 13 and third aluminum nitride ceramic substrate 15, need pair
Electrode plate 14 carries out surface acid etching, and is activated after clean, refers to wherein being activated to electrode plate
14 carry out surface polishing and carry out coupling agent activated grafting after a polish, then seal up for safekeeping stand-by.It is mentioned by the purpose of activation processing
High bonding activity, convenient for bonding.
Heating sheet of the invention generates heat after being powered, and exists in ceramic heat disk as heating source, itself can have more
The kind form of expression, such as:
Heating sheet 12 is formed resistance slurry after being mixed using molybdenum powder or tungsten powder with Behavior of Slurry for Aluminum Nitride Ceramics, agglutinant and is printed onto
On ceramic substrate.
Alternatively, above-mentioned heating sheet 12 is to be formed by molybdenum sheet or leaf by laser processing.Added using molybdenum sheet or leaf laser
The heating sheet 12 that work is formed only has the molybdenum on surface or tungsten to react with Behavior of Slurry for Aluminum Nitride Ceramics, agglutinant in sintering, heats
Will not react with Behavior of Slurry for Aluminum Nitride Ceramics, agglutinant inside piece 12, then ensure that thermal resistance size, thermal resistance size easily handle
Control, improves heating effect.
Alternatively, heating sheet 12 can also be made of heater strip.
Heating sheet 12, the first aluminum nitride ceramic substrate 11, the second aluminum nitride ceramic substrate 13 and third aluminium nitride ceramics
Substrate 15 before bonding, is needed to carrying out surface activation process, the i.e. surface polishing to each ceramic substrate and after a polish
Coupling agent activated grafting is carried out, is then sealed up for safekeeping stand-by；Bonding activity is improved by being activated, convenient for bonding.
As shown in Figure 1, above-mentioned ceramic heat disk further includes grounding electrode 31 and two heating electrodes 32, grounding electrode 31 1
End sequentially passes through the second aluminum nitride ceramic substrate 13, heating sheet 12, the first aluminum nitride ceramic substrate 11 and is connected to electrode plate 14, main
Body is located in ceramic tube 2, the other end ground connection of grounding electrode 31., heating 32 one end of electrode sequentially passes through the first aluminium nitride ceramics
Substrate 11, ceramic tube 2 are connected to heating sheet 12, and main body is located in ceramic tube 2.The other end of two heating electrodes 32 is separately connected
In external power supply positive and negative anodes and with external power supply, heating sheet 12 formed heating circuit.
Specifically, as shown in figure 5, between electrode plate 14 and grounding electrode 31, heating between electrode 32 and heating sheet 12
Equipped with connector 41, pad is equipped between grounding electrode 31 and corresponding connector 41, between heating electrode 32 and corresponding connector 41
Piece 42.Preferably, 31, two heating electrodes 32 of above-mentioned grounding electrode by nickel or copper at.
Ceramic heat disk described in the present embodiment when in use, needs to be placed into the vacuum cavity for being full of reaction gas
In, in the upper ends semiconductor crystal wafer of ceramic heat disk, radio frequency external power supply is set outside vacuum chamber, and electrode plate 14 will
The load of appearance formula is formed with the pole plate of radio-frequency power supply, reaction gas will will form plasma and uniformly be deposited on semiconductor crystal wafer
On.The heating circuit work that electrode 32, external power supply and heating sheet 12 are formed is heated, so that heating 1 consistent heat generation of disk body, favorably
It is uniformly deposited on a semiconductor wafer in plasma.
It is identical with the heating mounting means of electrode 32 in grounding electrode 31, grounding electrode is specifically introduced now in conjunction with Fig. 1 and Fig. 5
31 mounting means.As shown in figure 5, heating disk body 1 is equipped with the first mounting hole.Specifically, the first ceramic body 11 is equipped with the
One through-hole, heating sheet 12 be equipped with the second through-hole, the second ceramic body 13 be equipped with third through-hole, first through hole, the second through-hole and
Third through-hole position is corresponding, forms above-mentioned first mounting hole；First mounting hole is unthreaded hole, the other end close to one end of electrode plate 14
For threaded hole.Connector 41, gasket 42 are placed in the first mounting hole, and connector 41 is close to electrode plate 14 and is arranged, the first ceramic body
11, it is equipped with the preformed hole for installing grounding electrode 31 on heating sheet 12, then sequentially passes through one end of grounding electrode 31
For installing the preformed hole of grounding electrode 31 on first aluminum nitride ceramic substrate 11, heating sheet 12, and screws in threaded hole and support
It is pressed on gasket 42, then is pressed on connector 41 on electrode plate 14 by gasket 42.
Grounding electrode 31 is installed by using the mode of threaded connection, mounting means is simple, quick for installation, convenient disassembly.
Wherein, connector 41 plays the role of connecting grounding electrode 31 and electrode plate 14, and further, connector 41 is by molybdenum or tungsten
It is made, connector 41 and electrode plate 14 is welded to connect, be more convenient installation, and ensure that connector 41 does not take off with 14 stable connection of electrode plate
From；Gasket 42 is made of gold, platinum or iron cobalt nickel alloy.
It is set on heating disk body 1 there are two the second mounting hole, for installing heating electrode 32, specifically, the second mounting hole is set
In on the first ceramic body 11, the second mounting hole is unthreaded hole close to one end of heating sheet 12, and the other end is threaded hole；Connector 41, pad
Piece 42 is sequentially placed into unthreaded hole and connector 41 is close to heating sheet 12 and is arranged, and one end of heating electrode 32 passes through ceramic tube 2 and screws in spiral shell
In pit and gasket 42 is pressed on, and is pressed on connector 41 on heating sheet 12 by gasket 42.Wherein, connector 41 is by molybdenum or tungsten
It is made, connector 41 and heating sheet 12 are welded and fixed.
Since ceramic heat disk has heating temperature-fall period repeatedly in use, there can be stress release,
The heating sheet 12 as made of molybdenum or tungsten, the coefficient of expansion of electrode plate 14 are different from the coefficient of expansion of electrode, if directlying adopt
The mode of welding connects heating sheet 12 and electrode, electrode plate 14 and electrode, can pad easily be cracked.It is adopted in the present embodiment
The connector made of molybdenum or tungsten, and connector is directly connect with heating sheet, electrode plate welding, due to connector 41 and heating sheet 12,
Electrode plate 14 is made of identical material, and the coefficient of expansion is identical, and pad is not easy to crack in heating temperature-fall period repeatedly；
And electrode is pressed on gasket 42 on 41 end face of connector by the way of being threadedly coupled, and gasket 42 is by gold, platinum or iron-cobalt-nickel
Alloy is made, and hardness is smaller so that gasket 42 contacted with connector 41, electrode it is even closer, connect it is more stable；And it can
Electrode is avoided directly to contact with connector 41, butt joint causes crush injury, and connection type is simple, is quickly and expediently installed.
As shown in Figure 6 to 8, the lower surface side of the first aluminum nitride ceramic substrate 11 is equipped with mounting groove 10, ceramic tube 2
One end is equipped with and mounting groove 10 matched raised 21；Behavior of Slurry for Aluminum Nitride Ceramics is equipped between the end face and mounting groove 10 of protrusion 21.
During installation, Behavior of Slurry for Aluminum Nitride Ceramics is coated on the end face of protrusion 21, then protrusion 21 is inserted into mounting groove 10, is carried out later
Pressurization, release, then be sintered.Preferably, above-mentioned mounting groove 10 is annular groove, and protrusion 21 is annular protrusion 21, is passed through
The cooperation of annular protrusion 21 and annular groove positions ceramic tube 2 and heating disk body 1, is convenient for follow-up sintering.
Invention additionally discloses a kind of chemical vapor deposition device including above-mentioned ceramic heat disk, for efficient uniform to
Wafer heating.
Fig. 9 is the preparation method flow chart of the present embodiment aluminium nitride ceramics heating dish, below with reference to Fig. 9 to above-mentioned aluminium nitride
The preparation method and specific structure of ceramic heat disk are described in detail, specifically includes the following steps:
S1, by the first aluminum nitride ceramic substrate 11, heating sheet 12, the second aluminum nitride ceramic substrate 13, electrode plate 14 and
Three aluminum nitride ceramic substrates 15 pass sequentially through Behavior of Slurry for Aluminum Nitride Ceramics bonding, forming layer structure.
Specifically, heating sheet 12 is placed between the first aluminum nitride ceramic substrate 11 and the second aluminum nitride ceramic substrate 13,
And the opposite sides face of heating sheet 12 is passed through into one that Behavior of Slurry for Aluminum Nitride Ceramics is bonded in the first aluminum nitride ceramic substrate 11 respectively
The one side of side and the second aluminum nitride ceramic substrate 13；Electrode plate 14 is placed in the second aluminum nitride ceramic substrate 13 and third again
Between aluminum nitride ceramic substrate 15, the opposite sides face of electrode plate 14 is then bonded in the second aluminum nitride ceramic substrate 13 respectively
Another side and third aluminum nitride ceramic substrate 15 one side.
It is bonded between above-mentioned heating sheet 12 and the first aluminum nitride ceramic substrate 11 using low thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics 16；
Heating sheet 12 and the second aluminum nitride ceramic substrate 13, electrode plate 14 and the second aluminum nitride ceramic substrate 13 and electrode plate 14 and third
Aluminum nitride ceramic substrate 15 is bonded by high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics 17.First aluminum nitride ceramic substrate 11, the second nitrogen
Change aluminium ceramic substrate 13 and third aluminum nitride ceramic substrate 15 is all made of aluminium nitride ceramics and is made, the difference is that ceramic
Additive level in substrate is different, then makes the thermal conductivity of the first ceramic member substrate less than the second aluminum nitride ceramic substrate 13
Thermal conductivity.
Wherein, high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics parts by weight meter includes following component: 70-80 parts of aluminum nitride powder；Additive
5-15 parts；10-25 parts of organic carrier；0.5-3 parts of coupling agent；Additive is yttrium oxide and/or calcium oxide and/or magnesia, is had
Airborne body is the mixture of terpinol and cellulose binder, and wherein the mass percent of terpinol and cellulose binder can be with
It is determined according to the requirement to adhesive property, is specifically not required to specifically limit again.Low thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics and high thermal conductivity nitridation
The difference of aluminium ceramic slurry is that the content of additive is different, and the content of additive is different, can make Behavior of Slurry for Aluminum Nitride Ceramics
Thermal conductivity is different；In the present embodiment, the thermal conductivity of high thermal conductivity aluminium nitride ceramics is greater than the thermal conductivity of low thermally conductive aluminium nitride ceramics；Tool
Body, additive level is increased 60-80 parts in high thermal conductivity Behavior of Slurry for Aluminum Nitride Ceramics and forms low thermally conductive Behavior of Slurry for Aluminum Nitride Ceramics.
The thickness direction of S2, edge heating disk body 1 act perpendicularly to layer structure and apply 10MPa-70MPa's to heating disk body 1
Pressure hot pressed sintering 2h-5h under the conditions of 1500 DEG C -1900 DEG C.
S3, heating disk body 1 obtained in S2 is dried into 3h-5h under the conditions of 80 DEG C -150 DEG C.
, can be with aperture tapping after the completion of heating disk body integral manufacturing, beginning processed user is subsequent on heating disk body
The aperture of part installation.
S4, heating disk body 1 obtained in ceramic tube 2 and S2 is bonded to form ceramic heat by Behavior of Slurry for Aluminum Nitride Ceramics
Disk.
S5, ceramic heat disk obtained in S4 is dried into 3h-5h under the conditions of 80 DEG C -150 DEG C.
S6, by ceramic heat disk obtained in S5 under the conditions of 1500 DEG C -1700 DEG C hot pressed sintering 1h-3h.
S7, grounding electrode 31 and heating electrode 32 are installed in ceramic heat disk obtained in S6.
Finally, spraying sealing of hole again.
Due to being before sintering bonded as one each layer of heating dish by Behavior of Slurry for Aluminum Nitride Ceramics, aluminium nitride is utilized
The bonding activity of ceramic slurry reduces the condition requirement to sintering, therefore the present embodiment can be in same or lower hot pressing
Under the conditions of reach preferable ceramic dense degree.
The small corresponding heat transfer performance of thermal conductivity is also poorer, and heating sheet, which is powered, generates heat, and heat is by heating sheet two sides
Up and down direction conduction.Heating dish of the invention, using heating dish by the way that the thermal conductivity of the first ceramic body is set smaller than
The thermal conductivity of part is lower than the second ceramics above heating sheet between the thermal conductivity and ceramic tube and heating disk body of two ceramic bodies
The thermal conductivity of body, the heat for enabling to heating sheet to generate pass through the second ceramic body as far as possible and transmit to third ceramic body, subtract
It is small to be exported downwards by the first ceramic body, to improve the heat conduction efficiency of heating dish, reduce heat losses, meanwhile, it is capable to make
Obtain the heating to the wafer in heating dish more evenly.Current existing heating dish uses same material, during heating,
Heating dish support tube can transmit heat along pipe to cavity direction, accordingly even when increase middle part adding thermal resistance density intentionally,
But be for relative dynamic during heating, and pipe heat transfer is also what dynamic occurred, if reducing the first aluminium nitride
Heat effectively can be largely communicated up by the thermal conductivity of ceramic substrate, so that the setting of heating dish overall electrical resistance is simpler
It is single and easy to operate, temperature can be preferably controlled without more disturbing factors, and in wafer etching or deposition process, is guaranteed
The uniformity of wafer bulk temperature, only temperature uniformly just can guarantee that etching or deposition process stable and uniform are easily controllable.
It should be noted that each embodiment above by reference to described in attached drawing is only to illustrate the present invention rather than limits this
The range of invention, those skilled in the art should understand that, it is right under the premise without departing from the spirit and scope of the present invention
The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context
Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment
All or part of in combination with any other embodiment all or part of come using.
Claims (10)
1. a kind of ceramic heat disk, including heating disk body (1), ceramic tube (2), which is characterized in that the heating disk body (1) includes
The first aluminum nitride ceramic substrate (11), heating sheet (12) and the second aluminum nitride ceramic substrate being cascading from the bottom to top
(13)；There is thermal conductive ceramic slurry between the heating sheet (12) and first aluminum nitride ceramic substrate (11)；The heating sheet
(12) there is thermal conductive ceramic slurry between second aluminum nitride ceramic substrate (13)；First aluminium nitride is made pottery through oversintering
Porcelain substrate (11), the heating sheet (12) and second aluminum nitride ceramic substrate (13) fixation are integrally formed；First nitrogen
The thermal conductivity for changing the first ceramic body formed after aluminium ceramic substrate (11) and the sintering of adjacent thermal conductive ceramic slurry is lower than described the
The thermal conductivity of the second ceramic body formed after nitride aluminium ceramic substrate (13) and the sintering of adjacent thermal conductive ceramic slurry.
2. ceramic heat disk according to claim 1, which is characterized in that the heating disk body (1) and ceramic tube (2) pass through
Thermal conductive ceramic slurry bonding is sintered to fix.
3. ceramic heat disk according to claim 2, which is characterized in that second aluminum nitride ceramic substrate (13) is above
Being cascading has electrode plate (14) and third ceramic body, and the electrode plate (14) is connected with main body and is located at the ceramic tube
(2) grounding electrode (31) in.
4. ceramic heat disk according to claim 1, which is characterized in that the lower surface of the heating sheet (12) connects two
Main body is located at the heating electrode (32) in the ceramic tube (2), and two heating electrodes (32) are connected to external power supply
Positive and negative anodes, formed heating circuit.
5. ceramic heat disk according to claim 4, which is characterized in that the heating electrode (32) and the heating sheet
(12) connector (41) are equipped between, the connector (41) is made of molybdenum or tungsten.
6. ceramic heat disk according to claim 4, which is characterized in that the heating electrode (32) and corresponding described connect
It is provided with gasket (42) between head (41), the gasket (42) is made of gold, platinum or iron cobalt nickel alloy.
7. ceramic heat disk according to claim 3, which is characterized in that the electrode plate (14) and grounding electrode (31) it
Between be equipped with connector (41), the connector (41) is made of molybdenum or tungsten；
Gasket (42) are equipped between the grounding electrode (31) and the corresponding connector (41), the gasket (42) is by gold, platinum
Or iron cobalt nickel alloy is made.
8. a kind of chemical vapor deposition device, which is characterized in that including ceramic heat disk as claimed in claim 1.
9. a kind of preparation method of ceramic heat disk, which comprises the steps of:
Production heating disk body:
By the first aluminum nitride ceramic substrate, heating sheet, the second aluminum nitride ceramic substrate, electrode plate and third aluminum nitride ceramic substrate
Pass sequentially through ceramic slurry bonding, forming layer structure；Wherein, using low thermally conductive between the first aluminum nitride ceramic substrate and heating sheet
Ceramic slurry bonding, is led between heating sheet, the second aluminum nitride ceramic substrate, electrode plate and third aluminum nitride ceramic substrate using height
Thermal Ceramics slurry bonding；The thermal conductivity of first aluminum nitride ceramic substrate is made pottery less than the second aluminum nitride ceramic substrate and third aluminium nitride
Porcelain substrate；
Layer structure is passed through into a hot pressed sintering, obtains heating disk body；
It will be bonded between ceramic tube and heating disk body by low thermal conductive ceramic slurry, be sintered by secondary hot pressing.
10. preparation method according to claim 9, which is characterized in that further include that installation grounding electrode and heating electrode arrive
The step of ceramic heat disk body.
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| CN111698799A (en) * | 2020-05-14 | 2020-09-22 | 佛山市也牛科技有限公司 | Non-metal heating plate for cooking and preparation method and heating device thereof |
| CN112259490A (en) * | 2020-10-12 | 2021-01-22 | 北京巨瓷科技有限公司 | Electrostatic chuck with heating function and preparation method thereof |
| CN116026485A (en) * | 2023-03-31 | 2023-04-28 | 无锡卓瓷科技有限公司 | Testing device of ceramic heating disc for semiconductor equipment |
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