CN101101887A - Corrosion resistant wafer processing apparatus and method for making thereof - Google Patents

Corrosion resistant wafer processing apparatus and method for making thereof Download PDF

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Publication number
CN101101887A
CN101101887A CN 200610064284 CN200610064284A CN101101887A CN 101101887 A CN101101887 A CN 101101887A CN 200610064284 CN200610064284 CN 200610064284 CN 200610064284 A CN200610064284 A CN 200610064284A CN 101101887 A CN101101887 A CN 101101887A
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selected
processing apparatus
electrode
base substrate
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CN 200610064284
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Chinese (zh)
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B·J·奥莱奇诺维茨
D·A·龙沃思
D·M·鲁辛科
D·萨里加尼斯
J·克卢格
M·谢普肯斯
V·L·罗
W·范
X·刘
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通用电气公司
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Priority to US60/806648 priority
Priority to US11/554590 priority
Priority to US11/557905 priority
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Publication of CN101101887A publication Critical patent/CN101101887A/en

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Abstract

A wafer processing apparatus characterized by having corrosion resistant connections for its electrical connections, gas feed-through channels, recessed areas, raised areas, MESA, through-holes such as lift-pin holes, threaded bolt holes, blind holes, and the like, with the special configurations employing connectors and fillers having excellent chemical resistant properties and optimized CTEs, i.e., having a coefficient of thermal expansion (CTE) that closely matches the CTE of the base substrate layer, the electrode(s), as well as the CTE of coating layer. In one embodiment, a nickel plated molybdenum insert is employed.

Description

抗腐蚀的晶片处理设备及其制造方法5相关申请的交叉参者 Corrosion-resistant wafer processing device and a manufacturing method 5 who CROSS-REFERENCE TO RELATED APPLICATIONS

本申请要求2006年7月06日申请的美国60/806648的权益,通过参考将其专利申请全面地引入这里。 This application claims priority from July 6, 2006 in the interests of the US 60/806648 by reference in its patent applications are incorporated herein by comprehensively.

技术领域 FIELD

10 本发明通常涉及一种用在半导体制造中的晶片处理设备。 10 invention relates generally to a wafer processing apparatus for use in semiconductor manufacturing.

背景技术 Background technique

制备电子器件的工艺包括许多处理步骤,该步骤依靠材料的受控沉积或生长或控制的且在前沉积的/生长材料的常用选择性修改。 Process for producing an electronic device comprising a number of processing steps used to selectively modify / step growth material deposited or grown to rely on controlled-controlling material and or preceding deposition. 示范性工15 艺包括化学汽相沉积(CVD)、热化学汽相沉积(TCVD)、等离子体增强化学汽相沉积(PECVD)、高密度等离子体化学汽相沉积(HDP CVD)、 膨胀热等离子体化学汽相沉积(ETP CVD)、金属有机化学汽相沉积(M0CVD)等。 Exemplary arts work 15 includes a chemical vapor deposition (CVD), thermal chemical vapor deposition (TCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDP CVD), expanding thermal plasma chemically vapor deposition (ETP CVD), metal organic chemical vapor deposition (M0CVD) and the like. 在一些工艺例如CVD中,在低压和高温条件下在反应器内使用一种或多种气态反应物,以在半导体晶片表面上形成固体绝缘或导20 电层,其位于放置在反应器中的基板(晶片)支架上。 CVD using, for example, in some processes at low pressure and high temperature conditions within the reactor one or more gaseous reactants to form a solid insulation on a semiconductor wafer surface or the electrically conductive layer 20, which is positioned in the reactor is placed (wafer) on a substrate holder.

在CVD工艺中基板支架用作加热器,其一般包含至少一个加热晶片的加热元件,或用作静电卡盘(ESC),其包括用于静电夹住晶片的至少一个电极,或可以是加热器/ESC组合体,其具有用于加热和夹持的电极。 In the CVD process, the substrate holder is used as a heater, which typically comprises at least one heating element for heating the wafer, or as an electrostatic chuck (the ESC), which comprises at least one electrode for electrostatically clamping the wafer, or may be a heater / ESC assembly having an electrode for heating and clamping. 基板支架组件包括用于支撑晶片的衬托器,和设置在衬托器下面加25 热晶片的多个加热器。 It comprises a substrate support assembly for supporting a wafer susceptor, and a plurality of heaters 25 disposed add heat in the wafer susceptor below. 在相对高的温度下和一般在高腐蚀性的气氛下在处理容器的限定环境内加热半导体晶片。 And heating the semiconductor wafer generally defined environment within the processing chamber at a relatively high temperature in an atmosphere of highly corrosive.

在半导体晶片上沉积预定厚度的膜之后,经常在反应器内部的其它暴露的表面上存在伪沉积(spurious deposition)。 After the film is deposited at a predetermined thickness on the semiconductor wafer, there is often a pseudo-deposition (spurious deposition) on other exposed surfaces inside the reactor. 该伪沉积在随后的沉积中会引起问题。 The pseudo-deposited subsequent deposition can cause problems. 因此,用清洗工艺,即在每个晶片之后的某些情况30下和在处理了一批晶片之后的其它情况下,周期性地移除。 Thus, with the cleaning process, i.e., in some cases after each wafer 30 and in other cases after the treatment of a lot of wafers, is removed periodically. 本领域共用 Common in the art

的清洗工艺包括原子氟基清洗、碳氟化合物等离子体清洗、疏磺六氟化物等离子体清洗、氮三氟化物等离子体清洗和氟三氯氟化物清洗。 Cleaning processes include cleaning fluoro group, a fluorocarbon plasma cleaning, plasma cleaning sparse sulfo hexafluoride, nitrogen trifluoride and fluorine plasma cleaning trichloromethyl fluoride cleaning. 在清洗工艺中,反应器部件,例如墙壁、窗、基板支架和组件等,常被腐蚀/ 化学侵蚀。 In the cleaning process, the reactor components, such as walls, windows, and other substrate support assembly and, often corrosion / chemical attack. 腐蚀对加热到高温的表面侵蚀非常多,例如一般加热器的工 Is heated to a high temperature corrosion of the surface erosion is very large, for example, general industrial heater

5 作温度一般在400-500。 5 operating temperature is generally 400 to 500. C范围但可以高至600-1000。 C but can range as high as 600-1000. C范围。 C range.

现有技术晶片支持的已知问题是电连接一般是不抗腐蚀的。 Known problems of the prior art is electrically connected to the wafer support is generally not corrosion resistant. 因此即使加热器、卡盘或衬托器可以获得足够的寿命用在具有保护涂层例如A1N的腐蚀的、高温环境中,仍需要避免暴露的接触区域到腐蚀环境。 Thus even if the heater, a chuck or susceptor lifetime may be obtained by having a sufficient corrosion protecting coating of A1N e.g., high temperature environments, there remains a need to avoid touching the exposed region corrosive environment. 美国专利No. 6,066,836公布了一种包括含有电连接在内的轴的晶片处 U.S. Patent No. 6,066,836 published at the wafer comprising electrically connected to the inner shaft containing the

10理设备。 10 physical devices. 中心轴方案增加了应力集中点到该设备,即,当热应力时,会更容易裂缝,并由此可以进一步限制热斜率或导致该设备的短的有用的使用寿命。 The central axis of the solution increases to the point of stress concentration apparatus, i.e., when the thermal stress, cracks would be easier, and thereby further limit thermal slope or resulting in a short useful life of the device.

美国专利公布No. 2005/0077284公开了一种具有电导线收纳在陶瓷管中以遮蔽/保护电导线的晶片支架。 U.S. Patent Publication No. 2005/0077284 discloses an electrical conductor accommodated in the ceramic tube to the shielding / protection electrical conductor wafer holder. 在该公布中,玻璃接合部件或铜焊 In this publication, a glass or braze joint member

15材料例如有机树脂可用于连接管状管与陶瓷基板。 15 may be used an organic resin material such as a tubular pipe is connected to the ceramic substrate. 采用O-环来密封地密封管状管的导线。 Using O- ring seal to seal the tube of the tubular wire. 甚至使用0-环、玻璃接合部件、铜焊材料等,仍希望电极和导线暴露到室中的气氛。 Even the use of 0- ring glass joint member, a brazing material or the like, and the wire electrode still want exposed to the chamber atmosphere. 因此,不介绍腐蚀气体的使用,并且介绍该设备用于低-k膜烘焙。 Thus, use of etching gas is not introduced, and a device for introducing the low -k baked film.

仍需要一种具有适合于所有半导体处理环境的结构部件的晶片处理 Still a need for a process suitable for all of the semiconductor wafer processing environment structural member

20设备,该环境包括采用腐蚀气体的环境。 20 device, the environment including the use of corrosive gas environment. 在一个实施例中,本发明涉及这样的晶片处理设备,设计电接触和连接遮蔽在半导体器件处理环境中一般遇到的腐蚀气体。 In one embodiment, the present invention relates to a wafer processing apparatus, and an electrical contact connected to the shield design of the semiconductor device in the etching gas processing environments typically encountered. 此外,本发明的设备可以耐受在半导体处理时严峻的热应力需求,即〉2(TC/分钟的高热斜率和〉20。C的相对大的温度差。 Further, the apparatus of the present invention can withstand severe thermal stress when the semiconductor process requirements, i.e.,> 2 (TC / min and heat slope> 20.C relatively large temperature difference.

25 25

发明内容 SUMMARY

在一个方面中,本发明涉及一种晶片处理设备,包括:基底基板, 用于在其上放置晶片,该基底基板包括石墨、难熔金属、过渡金属、稀 In one aspect, the present invention relates to a wafer processing apparatus, comprising: a base substrate, for which the wafer is placed on the base substrate include graphite, refractory metals, transition metals, rare

土金属和其合金中的至少一种;选自电阻加热电极、等离子体产生电极、 Earth metals and alloys of at least one; selected resistive heating electrodes, the plasma generating electrode,

30 静电卡盘电极和电子束电极的至少一个电极;用于将至少一个电极连接 At least one electrode 30 of the electrostatic chuck electrode and the electrode of the electron beam; means for connecting at least one electrode

到外部电源的导线,其中该导线自其以一间隔穿透电极;和用于填充/ 密封导线和电极之间间隔的填料;其中电极分别具有基板CTE的0.75 到1.25倍范围的热膨胀系数(CTE)。 Leads to an external power source, wherein the wire at a distance from its through electrode; and a spacing between the filler filling / sealing wires and electrodes; wherein the electrodes each having a thermal expansion coefficient range of 0.75 to 1.25 times the CTE of the substrate (CTE ).

在本发明的另一方面中,该设备进一步包括设置在电极上的至少涂5 层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物构成的组的元素的氮化物、碳化物、氮碳化物中的至少一种;其中导线自其以一间隔穿透涂层和电极,并且用于填充/密封该间隔的填料具有涂层的0. 75到1.25倍范围的CTE。 In another aspect of the present invention, the apparatus further comprises at least a coating disposed on the electrode layer 5, which comprises a coating selected from the group consisting of B, Al, Si, Ga, Y, refractory hard metals, transition metals and combinations thereof nitride of an element group consisting of a carbide, a carbide of at least one of nitrogen; wherein through the coating from its wire electrode and a spacer, and a filler for filling / sealing the spacer having a coating 0 . CTE 75 by the factor 1.25 range.

在本发明的又一方面中,电极嵌在烧结的基底基板中,该基底基板10 包括选自由B、 Al、 Si、 Ga、 Y组成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物;具有NaZn(P(Kh的NZP结构的高热稳定性磷酸锆;难熔硬金属;过渡金属;铝的氧化物、氮氧化物和其组合物的组的材料;任选烧结剂。 In yet another aspect of the present invention, the electrode is embedded in the sintered base substrate, the substrate 10 includes a substrate selected from the group consisting of B, Al, Si, Ga, Y oxide of an element from the group consisting of nitride, carbide, nitrogen carbide or oxynitride; having NaZn (P (high thermal stability of the zirconium phosphate of the NZP structure Kh; refractory hard metal; a transition metal; aluminum material group of oxides, nitrogen oxides, and combinations thereof; optionally sintering agent.

在一个方面中,导线包括钼、镍、钴、铁、钨、钌和其合金中的至15 少一种。 In one aspect, the wire comprising molybdenum, nickel, cobalt, iron, tungsten, ruthenium and alloys of at least one to 15. 在另一方面中,导线进一步涂布有镍;锆、铪、铈的氧化物或碳化物;和其混合物中的一种。 In another aspect, the conductor is further coated with nickel; of one kind and mixtures thereof; zirconium, hafnium, cerium oxide or carbide.

在一个方面中,该设备提供有多个扣件,例如螺母、铆钉、螺栓、 In one aspect, the device is provided with a plurality of fasteners, such as nuts, rivets, bolts,

螺孔等,用于将导线和其它功能组件固定到该设备,其中该导线和/或扣 Other holes, wires, and other functional components for securing to the apparatus, wherein the lead and / or snap

件涂布有易延展且符合将被涂布部件的热膨胀的抗蚀刻导电材料。 Ductile member coated with a conductive material and in accordance with the etching resistant thermal expansion of the member to be coated. 在一20 个实施例中,导线和/或扣件涂布有镍、锆、铪、铈的氧化物或碳化物; 和其混合物中的一种。 In one 20 embodiment, the leads and / or fasteners coated with nickel, zirconium, hafnium, cerium oxide or carbide; and mixtures of one.

在另一方面中,用于晶片处理设备中保护/填充抗腐蚀连接的填充材料选自具有NaZn (P(Kh的NZP结构的高热稳定性磷酸锆;包含选自由元素周期表的2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶瓷 In another aspect, the wafer processing device for protection / corrosion resistant filler material is selected having a filling connection NaZn (P (high thermal stability of the zirconium phosphate of the NZP structure Kh; selected from the group comprising Group 2a of the Periodic Table, 3a glass of at least one element from the group consisting of group 4a and group - ceramic

25 组成物,例如铝硅酸镧(LAS)、铝硅酸镁(MAS)、铝硅酸钙(CAS )和铝硅酸钇(YAS); Ba0-Al20「B20「Si02玻璃;和SiO〗和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗等离子体材料的混合物;并且其中在25-600。C的温度范围的处理环境中填料组成具有小于1000埃每分钟(A/分钟)的蚀刻 25 composition, for example, lanthanum aluminosilicate (LAS), aluminum silicate (the MAS), calcium aluminosilicate (CAS) and yttrium aluminum silicate (YAS); Ba0-Al20 "B20" Si02 glass; and〗 and SiO It includes Y, Sc, La, Ce, Gd, Eu, Dy oxides, etc., or a fluoride of one of these metals, yttrium, or - a mixture of garnet (YAG) a plasma resistant material - aluminum; and wherein 25-600.C temperature range of filler etching processing environment having less than 1000 angstroms per minute (a / min)

30 率。 30 rate.

附图说明 BRIEF DESCRIPTION

图1是晶片或基板处理设备的一个实施例的透视图。 FIG. 1 is a perspective view of a wafer or substrate processing apparatus of the embodiment.

图2A、 2B和2C是图9的基板处理设备具有不同层结构的各个实施例的截面图。 2A, 2B, and 2C are view of a substrate processing apparatus 9 is a sectional view of various embodiments of the structure of the different layers.

5 图3是本发明的晶片处理设备的一个实施例的截面图。 5 FIG. 3 is a sectional view of one embodiment of a wafer processing apparatus according to the present invention.

图4是本发明的第二实施例的截面图,用于具有锥形特征连接的晶片处理设备。 FIG 4 is a sectional view of a second embodiment of the present invention, a wafer processing apparatus having a tapered connection feature.

图5是本发明的另一实施例的截面图,用于使用抗腐蚀填料的晶片处理设备。 5 is a sectional view of another embodiment of the present invention, a wafer processing apparatus for using corrosion-resistant filler.

10 图6是具有多个电极的晶片处理设备的不同实施例的截面图。 10 FIG 6 is a sectional view of a different embodiment of a wafer processing apparatus having a plurality of electrodes.

图7是图4中所示的晶片处理设备具有多个电极的不同实施例的截面图。 7 is a sectional views of different embodiments of the wafer processing apparatus shown in FIG. 4 having a plurality of electrodes.

图8是图5中所示的晶片处理设备具有多个电极的不同实施例的截面图。 FIG 8 is a cross-sectional views of different embodiments of the wafer processing apparatus shown in FIG. 5 having a plurality of electrodes.

15 图9是图3中所示的晶片处理设备在接触区域具有部分移除的保护 15 FIG. 9 is protected by the wafer processing apparatus shown in FIG. 3 has a portion removed in the contact region

膜的不同实施例的截面图图IO是图9中所示的晶片处理设备膜的不同实施例的截面图,其中电极电镀/涂布有导电保护涂层。 A cross-sectional view of a different embodiment of the membrane IO is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG film 9, wherein the electroless plating / coated with a conductive protective coating.

图ll是图9中所示的晶片处理设备的不同实施例的截面图,但涂布20有抗腐蚀填料。 Fig ll is a sectional view of a different embodiment of FIG. 9 the wafer processing apparatus shown in, but corrosion resistant filler 20 is applied.

图12是图3中所示的晶片处理设备的不同实施例的截面图,另外的凹口利用加工的导电插入物钻到陶资芯基板中。 FIG 12 is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG. 3, the additional recess by the processing of the electrically conductive ceramic insert drill owned core substrate.

图13是图12中所示的晶片处理设备的不同实施例的截面图,除用杆和另外的螺母代替螺紋插入物外。 FIG 13 is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG. 12, except instead of the threaded rod and nut insert additional foreign objects. 25 图14是图3中所示的晶片处理设备的不同实施例的截面图,另外的 25 FIG. 14 is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG. 3, the additional

凹口利用加工的导电螺紋插入物钻到陶瓷芯基板中。 Recess with an electrically conductive thread cutting insert drill ceramic core substrate.

图15是图14中所示的晶片处理设备的不同实施例的截面图,其中保护涂层仅涂布在不与晶片接触的表面上。 FIG 15 is a cross-sectional views of different embodiments of the wafer processing apparatus shown in FIG. 14, wherein the protective coating is only on the surface not in contact with the coated wafer.

图16是图14中所示的晶片处理设备的不同实施例的截面图,其中30 凹口和/或凸起区域和/或台地结合到基板表面上。 FIG 16 is a sectional view of a different embodiment of a wafer processing apparatus 14 shown in which the recess 30 and / or raised areas and / or a platform bonded to the substrate surface.

图17是图15和16中所示的晶片处理设备的不同实施例的截面图, 组合了二者的特征。 FIG 17 is a cross-sectional views of different embodiments 15 and the wafer processing apparatus shown in FIG. 16, it combines the features of both.

图18是本发明的晶片处理设备的另一实施例的截面图,其中采用了导电基板。 FIG 18 is a cross-sectional view of another embodiment of a wafer processing apparatus according to the present embodiment of the invention, which uses a conductive substrate.

5 图19是图18中所示的晶片处理设备的不同实施例的截面图,其中 FIG 519 is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG. 18, wherein

采用了涂布的通孔。 Coated using a through hole.

图20示例了本发明的晶片处理设备的另一实施例的截面图,其中部分暴露出了电极并且应用了抗腐蚀垫圈。 A cross-sectional view of another embodiment of FIG. 20 illustrates a wafer processing apparatus according to the present embodiment of the invention, wherein the exposed portion of the electrode and the application of non-eroding washers.

图21是图20中所示的晶片处理设备的不同实施例的截面图,其中10使用具有涂布的通孔的螺栓。 FIG 21 is a sectional view of a different embodiment of the wafer processing apparatus shown in FIG. 20, in which the bolt through hole 10 having coated.

具体实施方式 Detailed ways

如在此使用的,可应用近似的语言来修改可在不引起涉及的基本功能改变的条件下而改变的任一数量的表示。 Can be applied as used herein, approximating language to represent any number of modifications can be made without causing a change in the basic function relates changed. 因此,由术语例如"约,,和15 "基本上,,修改的值,不限于在某些情况下指定的精确值。 Thus, for example, by the term "about 15,, and" substantially ,, modified value, limited to the precise value specified in some cases.

如在此使用的,术语"基板"和"晶片"可交替使用;指的是由本发明的设备支撑/加热的半导体晶片基板。 As used herein, the term "substrate" and "wafer" are used interchangeably; refers to a semiconductor wafer substrate supported by the apparatus of the present invention / the heating. 而且如在此所使用的,"处理设备"可与"处理设备"、"加热器"、"加热设备"、或"处理设备,, 交替使用,指的是包含加热其上支撑的晶片的至少一个加热元件。 20 如在此使用的,术语"电路"可与"电极"交替使用,术语"电阻加热元件,,可与"电阻器,,或"加热电阻器"交替使用。以单种或多种形式使用术语"电路",指示存在至少一个单元。 Further As used herein, "processing device" may be "processing device", "heater", "heating device" as used herein, or "processing device ,, used interchangeably, refers to a wafer comprising a support which is heated at least a heating element 20. as used herein, the term "circuit" may be used with "electrode" alternately, the term "resistive heating element may be ,," ,, or resistor "heating resistor" are used. in single or various forms of the term "circuit", indicates the presence of at least one unit.

如在此使用的,具有紧密匹配热膨胀系数(CTE )的部件(例如层或部分)指的是该部件的CTE在相邻部件(另一层、基板或另一部件)的25 CTE的0. 75至1. 25之间。 As used herein, having a member (e.g., layer or section) closely matches the coefficient of thermal expansion (CTE) refers to the CTE of the member 25 adjacent zero CTE member (another substrate or another component) in the. 75 to 1.25 between.

如在此使用的,术语晶片处理设备的"功能构件"包括但不限于, 满足晶片处理设备其它功能需求的孔、加热器边缘上的片、电极的接触、 或基板中的插入物。 As used herein, the term wafer processing apparatus "functional component" includes, without limitation, to meet the functional requirements of the other hole wafer processing apparatus, the edge of the heater plate, the contact electrode or the substrate of the insert.

如在此使用的,术语"抗蚀刻"可与"抗腐蚀"交替使用,指的是30 在一个实施例中在至少400。 As used herein, the term "etch resistance" used interchangeably with "corrosion" refers to 30 in one embodiment at least 400. C、在第二实施例中500。 C, 500 in the second embodiment. C和在第二实施例中 C and in the second embodiment

800°C的工作温度下,在苛刻环境下即包括卣素的环境或当暴露于等离子 To 800 ° C at operating temperatures, i.e. in the harsh environment or environmental factors including wine container when exposed to plasma

体蚀刻、反应性离子蚀刻、等离子体清洗或气体清洗的抗蚀刻的或具有低蚀刻率的材料。 Etch, reactive ion etching, plasma cleaning or etching gas or a cleaning resistant material having a low etching rate.

在一个实施例中,抗蚀刻率在25-600。 In one embodiment, the etch rate of the anti-25-600. C的温度范围工作的苛刻环境5 下小于1000埃每分钟(A/分钟)。 Less than 1000 angstroms per minute (A / min) under a harsh environment temperature range C 5 work. 在第二实施例中,蚀刻率在25-600 。 In the second embodiment, the etch rate of 25-600. C的温度范围小于500埃每分钟(A/分钟)。 C temperature range is less than 500 angstroms per minute (A / min). 在第三实施例中,该速率在2 5 - 6 0 (TC的温度范围小于10 0埃每分钟(A /分钟)。在第四实施例中, 该速率在200-600。C的温度范围小于IOOO埃每分钟(A/分钟)。在第五实施例中,在200-600。C的温度范围小于500埃每分钟(A/分钟)。 In a third embodiment, the rate is 2 5 - 6 0 (TC temperature range of less than 100 angstroms per minute (A / min) In the fourth embodiment, the rate 200-600.C temperature range. less than IOOO angstroms. in the fifth embodiment, the temperature range in 200-600.C less than 500 angstroms per minute (a / min) per minute (a / min).

10 在本发明的一个方面中,电极包括钼、镍、钴、铁、鴒、钌和其合金中的至少一种,并且保护涂层包括氮化铝、氧化铝、氮氧化铝或其组合物中的至少一种,具有从基底基板的CTE的0. 75至1. 25范围的CTE。 10 In one aspect of the present invention, the electrodes comprising molybdenum, nickel, cobalt, iron, alba, ruthenium and alloys of at least one, and the protective coating layer comprises aluminum nitride, aluminum oxide, aluminum oxynitride, or combinations thereof at least one, it has a CTE from the range of 0.75 to 1.25 of the CTE of the base substrate. 借助采用的材料的描述、其制造工艺以及参考附图,如下示例本发明的晶片处理设备的实施例。 Materials employed by the description, examples and its manufacturing process with reference to the accompanying drawings, the following exemplary wafer processing apparatus according to the present invention.

15 晶片处理设备的通用实施例:在一个实施例中,如图l所示,晶片 General wafer processing apparatus 15 Example: In one embodiment, shown in FIG. L, the wafer

处理设备指的是盘状致密陶瓷基板12,其顶表面13用作晶片W的支撑表面,具有加热电阻器16掩埋于其中(未示出)。 It refers to a disc-shaped processing apparatus dense ceramic substrate 12, which serves as a top surface of the support surface 13 of the wafer W, having a heating resistor 16 embedded therein (not shown). 用于将电供给加热电阻器的电端子15可以贴附在陶瓷基板12底表面的中心,或在一个实施例中,在陶资基板的两侧。 Electrical terminals for electrically supplying the heating resistor 15 may be affixed to the center of the bottom surface of the ceramic substrate 12, or in one embodiment, both sides of the ceramic substrate in the embodiment resources. 通过施加电压至供电端子15均匀地加热放置 By applying a voltage to the power supply terminal 15 are placed uniformly heated

20在加热器的顶表面14上的晶片W,由此使加热电阻器产生热。 20 wafer W on the top surface of the heater 14, whereby the heating resistor generates heat.

关于本发明的晶片处理设备的基底基板,在如图2A所示的一个实施例中,基底基板包括盘或基板18,该盘或基板18包含导电材料,具有电绝缘的涂层19,且任选地帮助增强电绝缘的涂层19和基底基板18之间粘接的垫层(未示出)。 On the base substrate wafer processing apparatus according to the present invention, one embodiment of the embodiment shown in FIG. 2A, the base substrate 18 or the substrate comprises a disc, the disc 18 comprises a conductive material or a substrate having an electrically insulating coating 19, and any the adhesive between the cushion 18 help enhance optionally electrically insulating coating 19 and the base substrate (not shown). 盘18的导电材料选自石墨;难熔金属例如W Disk 18 of conductive material selected from graphite; refractory metals such as W

25 和Mo、过渡金属、稀土金属和合金;铪、锆和铈的氧化物和碳化物、和其混合物的组。 25 and Mo, transition metals, rare earth metals and alloys; group of hafnium, zirconium and cerium oxides and carbides, and mixtures thereof.

关于导电盘18的涂层19,层19包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属构成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物;铝的氧化物、氮氧化物;和其组合的至少一种。 Coating 19 on the conductive plate 18, 19 comprises a layer selected from the group consisting of B, Al, Si, Ga, Y, refractory hard metals, oxides of elements of the group consisting of transition metals, nitrides, carbides, carbonitrides or nitrogen oxides; aluminum oxides, nitrogen oxides; and at least one combination thereof. 关于30 任选的垫层,该层包括选自Al、 Si、包括Ta、 W、 Mo的难熔金属、包括 Optionally cushion 30 on the selected layer comprising Al, Si, including Ta, W, Mo refractory metal, comprising

钛、铬、铁的过渡金属的元素的氮化物、碳化物、氮碳化物、硼化物、 Titanium, a nitride of a transition metal elements chromium, iron, carbides, carbonitrides, borides,

氧化物、氮氧化物;和其混合物中的至少一种。 And at least one mixture thereof; oxides, nitrogen oxides. 在一个实施例中,垫层包括TiC、 TaC、 SiC、 MoC和其混合物中的至少一种。 In one embodiment, the underlayer comprises at least one of TiC, TaC, SiC, MoC, and mixtures thereof.

在如图2B所示的一个实施例中,其中基底基板18包括电绝缘材料 In one embodiment shown in Figure 2B, wherein the substrate comprises a substrate 18 of electrically insulating material

5 (例如,烧结基板),该材料选自由选自由B、 Al、 Si、 Ga、 Y构成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物、具有NaZn (P(K) 3 的NZP结构的高热稳定的磷酸锆;难熔硬金属;过渡金属;铝的氧化物、 氮氧化物;和具有高耐磨损和高热阻性质的其组合物构成的组。在一个实施例中,基底基板18包括A1N,其具有〉50W/mk(或有时〉100W/mk) 5 (e.g., a sintered substrate), the material is selected from the group consisting of selected from the group consisting of B, Al, Si, Ga, oxide, nitride, carbide, oxynitride carbide or oxynitride of an element from the group consisting of Y, having NaZn (P heat stabilized zirconium phosphate NZP structure (K) 3; a refractory hard metal; a transition metal; aluminum oxides, nitrogen oxides;. groups and combinations thereof having a high heat resistance and high abrasion properties of the configuration in one embodiment, the base substrate 18 comprises A1N, having> 50W / mk (or sometimes> 100W / mk)

10的高导热率、通过腐蚀气体例如氟化物和氯化物气体的高抗腐蚀性,尤其是高抗等离子体。 10 is a high thermal conductivity, for example, by the etching gas and high corrosion resistance fluoride chloride gas, in particular high resistance to plasma. 在一个实施例中,基底基板包括〉99. 7%纯度的高純度氮化铝,和选自Y^、 En03和其组合物的烧结剂。 In one embodiment, the base substrate comprises> high-purity aluminum nitride, 99.7% purity, and a sintering agent is selected from Y ^, En03, and combinations thereof.

在如图2C所示的一个实施例中,具有最佳电路设计的加热元件或电极16 "掩埋"在陶覺基板12中。 In one embodiment illustrated in FIG 2C, an electrode having a heating element or a preferred circuit design 16 "buried" in the sense ceramic substrate 12. 加热元件16包括选自具有高熔点的金 16 comprises a heating element having a high melting point metal selected from the group

15 属例如鴒、钼、铢和铂或其合金;属于周期表的IVa、 Va和VIa族的金属的碳化物和氮化物;铪、锆和铈的碳化物或氧化物,和其组合物的材料。 Ling 15 genera e.g., molybdenum, and platinum or alloys thereof baht; a metal belonging to the periodic table IVa, Va and Group VIa of carbides and nitrides; hafnium, zirconium and cerium oxides or carbides, and combinations thereof material. 在一个实施例中,加热元件16包括具有CTE接近匹配基板(或其涂层)的CTE的材料。 In one embodiment, heating element 16 comprises a material having a CTE closely matched to the substrate (or coating) the CTE.

在如图2A-2B所示的另一实施例中,加热元件包括具有范围从l到 In another illustrated embodiment in FIG. 2A-2B embodiment, the heating element comprises a range of from l to

20 1000 jum厚度的膜电极16。 20 1000 jum electrode film thickness of 16. 在第二实施例中,膜电极16具有5至500 ju m的厚度。 In the second embodiment, the film electrode 16 having a thickness of 5 to 500 ju m's. 膜电极16可以通过本领域已知的工艺形成在电绝缘的基底基板18 (图2B的)或涂层19 (图2A的)上,已知工艺包括丝网印刷、旋涂、等离子体喷射、喷射热解、反应性喷射沉积、溶胶-凝胶、燃烧喷灯(combustion torch)、电弧、离子电镀法、离子注入、离子等离子体 Upper electrode film 16 in the electrically insulating base substrate 18 (FIG. 2B), or may form a coating 19 (FIG. 2A) by a process known in the art, known processes including screen printing, spin coating, plasma spray, spray pyrolysis, reactive spray deposition, sol - gel, a combustion burner (combustion torch), an arc, ion plating, ion implantation, ion plasma

25 沉积、賊射沉积、激光烧蚀、蒸发、电镀和激光表面合金化。 25 is deposited, the thief shot deposition, laser ablation, evaporation, electroplating, and laser surface alloying. 在一个实施例中,膜电极16包括具有高熔点的金属,例如钨、钼、铼和铂或其合金。 In one embodiment, the membrane-electrode 16 comprises a metal having a high melting point, such as tungsten, molybdenum, rhenium and platinum or alloys thereof. 在第二实施例中,膜电极16包括贵金属或贵金属合金。 In the second embodiment, the film electrode 16 comprises a noble metal or noble metal alloy. 在第三实施例中,膜电极16包括铪、锆、铈和其混合物的碳化物或氧化物的至少一种。 In the third embodiment, the film electrode 16 comprises at least one carbide or oxide of hafnium, zirconium, cerium, and mixtures thereof.

30 在一个实施例中,电极的薄膜电阻控制在O. OOl至O. 10Q/sq的范 30 In one embodiment, the sheet resistance of the electrode is controlled to O. OOl O. 10Q / sq embodiment Fan

围内以满足电极的电阻需要,同时保持最佳的通路宽度和间隔在电极图 It needs to meet the inner peripheral resistance of the electrode, while maintaining the best path in FIG electrode width and spacing

案的通路之间。 Case between passage. 在第二实施例中,薄膜电阻控制在0. 005至0. 05Q/sq 的范围内。 In the second embodiment, the thin film resistors is controlled within the range of 0.005 to 0. 05Q] / sq. 薄膜电阻限定为电阻率与膜厚度的比率。 A sheet resistance is defined as the ratio of the resistivity and the film thickness.

在本发明的晶片处理设备中,可以使用一个或多个电极。 In the wafer processing apparatus according to the present invention, one or more electrodes may be used. 依据应用, 5 电极可用作电阻加热元件、等离子体产生电极、静电卡盘电极或电子束电极。 Depending on the application, it can be used as a resistive heating element electrode 5, the plasma generating electrode, an electrostatic chuck electrode or an electrode of an electron beam.

在如图2A和2B所示的本发明的一个实施例中,晶片处理设备10 进一步涂布有是抗蚀刻的保护涂膜25。 In one embodiment of the present invention shown in Figures 2A and 2B, the wafer processing apparatus 10 is further coated with a protective coating film is etching resistant 25.

在一个实施例中,保护涂层25至少包括选自由B、 Al、 Si、 Ga、 Y、 10难熔硬金属、过渡金属、和其组合物构成的组的元素的氮化物、碳化物、 氮碳化物或氮氧化物,在25至IOOO'C的温度范围内具有范围从2. 0x 10—7K至10 x io_7k的CTE。 In one embodiment, the protective coating 25 comprises at least a nitride of an element selected from the group consisting of B, Al, Si, Ga, Y, 10 refractory hard metals, transition metals, and combinations thereof configured, carbide, nitrogen oxynitride or carbide, having a range from 2. 0x 10-7K CTE to 10 x io_7k in a temperature range of 25 to IOOO'C.

在一个实施例中,保护涂层25包括高热稳定的磷酸锆,具有NZP 结构。 In one embodiment, the protective coating 25 comprises a high thermal stability of the zirconium phosphate having NZP structure. 术语NZP指的是NaZr2(P04) 3以及具有相似晶体结构的相关的同构15 磷酸盐和硅磷酸盐。 The term refers to an NZP NaZr2 (P04) 3 and associated with a similar structure having a crystal structure 15 and the silicon phosphate phosphate. 在一个实施例中这些材料通过加热碱土金属磷酸盐或碳酸盐、二氢磷酸铵(或磷酸氢二铵)和四价金属氧化物的混合物来制备。 In one embodiment, these materials are prepared by heating a mixture of alkaline earth metal carbonates or phosphates, dihydrogen ammonium phosphate (diammonium phosphate or) metal oxide and a tetravalent embodiment.

在一个实施例中,NZP型涂层25具有通式: In one embodiment, NZP-type coating 25 has the general formula:

(L, Ml, M2, Zn, Ag, Ga, In, Ln, Y, Sc ) , (Zr, V, Ta, Nb, Hf, Ti, Al, Cr, Ln),(P, Si, VA1"0, C, N) 12, (L, Ml, M2, Zn, Ag, Ga, In, Ln, Y, Sc), (Zr, V, Ta, Nb, Hf, Ti, Al, Cr, Ln), (P, Si, VA1 "0 , C, N) 12,

20 其中L-碱性的,Ml-碱土, M2-过渡金属,Ln-稀土,并如此选择l、 m、 n的值以保持电荷平衡。 20 wherein the basic L-, of ML-earth, transition metals M2-, Ln rare earth, and thus select l, m, n values ​​to maintain charge balance. 在一个实施例中,NZP型保护涂层25包括选自碱土氧化物、稀土氧化物、和其混合物的组的至少一种稳定剂。 In one embodiment, the NZP-type protective coating 25 comprises at least one stabilizer selected from the group of alkaline earth oxides, rare earth oxides, and mixtures thereof. 实例包括氧化钇(Y20O和氧化钓(CaO)。 Examples include yttrium oxide (Y20O fishing oxide (CaO).

在第三实施例中,保护涂层25包含含有选自由元素周期表的2a族、 In the third embodiment, the protective coating 25 comprises a Group 2a of the Periodic Table selected from the group comprising,

25 3a族和4a族的元素构成的组的至少一种元素的J皮璃-陶资组分。 J skin glass at least one element from the group of Group 25 3a and 4a of the element constituting - owned ceramic components. 如在此提到的2a族指的是包括Be、 Mg、 Ca、 Sr和Ba的碱土金属。 Group 2a as mentioned herein refers to an alkaline earth metal include Be, Mg, Ca, Sr and Ba. 如在此提到的3a族指的是Sc、 Y或镧系元素。 The Group 3a mentioned herein refers to Sc, Y or lanthanide. 如在此提到的4a族指的是Ti、 Zr 或Hf。 4a as referred to herein refers to the family is Ti, Zr or Hf. 用作涂层25的适合的玻璃-陶乾组分的实例包括但不限于铝硅酸镧(LAS )、铝硅酸镁(MAS )、铝硅酸钓(CAS )和铝硅酸钇(YAS )。 Suitable as a coating 25 of glass - ceramic dry ingredients Examples include, but are not limited to lanthanum aluminum silicate (LAS), aluminum silicate (MAS), fishing aluminosilicate (CAS) and yttrium aluminum silicate (YAS ).

30 在一个实例中,保护涂层25包含Si(h和包括Y、 Sc、 La、 Ce、 Gd、 30 In one example, the protective coating 25 comprises a Si (h and including Y, Sc, La, Ce, Gd,

Eu、 Dy等的氧化物、这些金属中之一的氟化物或钇-铝-石榴石(YAG) 的抗等离子体材料的混合物。 Eu, Dy oxides, etc., of one of the metals yttrium fluoride, or - a mixture of garnet (YAG) a plasma resistant material - aluminum. 可使用这种金属的氧化物的组合物、和/ 或金属氧化物与氧化铝的组合物。 Such metal oxides may be used in the compositions, and / or a combination of metal oxides with aluminum. 在第三实施例中,在除氧外金属原子的原子比方面,保护涂层25包括1至30原子%的2a族、3a族或4a族5 的元素和20至99原子%的Si元素。 In a third embodiment, the atomic ratio of oxygen atoms of the metal outer aspect, the protective coating 25 comprises from 1 to 30 atomic% of Group 2a, 3a, or 4a Group 5 elements and Group 20 to 99 atomic% of Si element. 在一个实例中,层25包括包括20 至98原子°/。 In one example, layer 25 comprises 20 to 98 atoms including ° /. 的Si元素、1至30原子°/。 Si element, 1-30 atomic ° /. 的Y、 La或Ce元素、和1至50原子°/。 Of Y, La or Ce element, and from 1 to 50 atoms ° /. 的Al元素的铝硅酸盐玻璃,和包括20至98原子°/。 Aluminosilicate glass of Al element, and comprising 20 to 98 atomic ° /. 的Si元素、1至30原子°/。 Si element, 1-30 atomic ° /. 的Y、 La或Ce元素、和1至50原子%的Zr元素的氧化锆硅酸盐玻璃。 Of Y, La or Ce element, zirconium silicate, and glass 1 to 50 atomic% of Zr.

10 在另一实施例中,保护涂层25以Y山广AhO厂Si02 (YAS)为基础,氧 Example 10 In another embodiment, the protective coating 25 to Y Mountain wide AhO plant Si02 (YAS) based oxygen

化钇含量范围从25至55wt.°/»,熔点小于160(TC且玻璃过渡温度(Tg ) 在884至895。C的窄范围内,添加任选的掺杂剂以调节CTE与相邻基板的CTE匹配。掺杂剂的实例包4舌BaO、 La力3或NiO以增加3皮璃的CTE, 和包括Zr(L以降低玻璃的CTE。在另一实施例中,保护涂层25以BaO- Yttrium content ranging from 25 to 55wt. ° / », a melting point of less than 160 (TC and a glass transition temperature (Tg) within a narrow range of 884 to 895.C, optionally adding a dopant to adjust the CTE of the substrate adjacent to the CTE match. 4 examples of dopants packet tongue BaO, La 3 or NiO force to increase the CTE of the glass sheath 3, and including Zr (L to lower the CTE of the glass. in another embodiment, the protective coating 25 to BaO-

15 Al203-B2(h-Si(h玻璃为基础,其中任选地添加La203、 Zr02或NiO以调节玻璃的CTE与基板的CTE适当的匹配。在一个实例中,涂层25包括30-40 摩尔。歸、5-15摩尔。Mh03、 10-25摩尔%8203、 25-40摩尔% Si(h、 O-IO 摩尔%1^203、 0-10摩尔。/oZr02、 0-10摩尔。/。NiO,具有B2(WSi02摩尔比范围从0. 25到0. 75。 15 Al203-B2 (h-Si (h-based glass, wherein the optionally added La203, Zr02 or NiO CTE CTE of the substrate to adjust the glass suitable match. In one example, the coating 25 comprising 30-40 mole The normalized, 5-15 mol .Mh03, 10-25 mol% 8203, 25-40 mol% Si (h, O-IO ^ 203 1 mol%, 0-10 mol ./oZr02, 0-10 mol ./. NiO, has a B2 (WSi02 molar ratio in the range from 0.25 to 0.75.

20 保护涂层25容纳小浓度的其它非金属元素,例如氮、氧和/或氩, 20 protective coating 25 to accommodate small concentrations of other non-metallic elements, such as nitrogen, oxygen and / or argon,

而对抗腐蚀或抗蚀刻没有任何有害的影响。 And against corrosion or etching does not have any harmful effects. 在一个实施例中,涂层包含高达约20原子百分比(原子°/。)的氢和/或氧。 In one embodiment, the coating comprises up to about 20 atomic percent ([deg.] /.) Hydrogen and / or oxygen. 在另一实施例中,涂层25包括高达约10%原子%的氢和/或氧。 In another embodiment, the coating comprises up to about 10%, 25 atomic% of hydrogen and / or oxygen.

保护涂层25可通过本领域已知的工艺沉积在基板上,该已知的工艺 The protective coating 25 may process known in the art deposited on the substrate, the known processes

25 包括热/火焰喷射、等离子体放电喷射、膨胀热等离子体(ETP)、离子电镀、化学汽相沉积(CVD)、等离子体增强化学汽相沉积(PECVD)、 金属有机化学汽相沉积(MOCVD)(也称为有机金属化学汽相沉积(OMCVD))、金属有机汽相外延(MOVPE)、物理汽相沉积工艺例如'减射、反应性电子束(e束)沉积、离子等离子体沉积和等离子体喷射。 25 includes a heat / flame spraying, plasma jet discharge, expanding thermal plasma (ETP), ion plating, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), metal organic chemical vapor deposition (MOCVD ) (also known as metal organic chemical vapor deposition (OMCVD)), metal organic vapor phase epitaxy (the MOVPE), physical vapor deposition processes such as' Save exit, reactive electron beam (e-beam) deposition, ion plasma deposition, and plasma spraying.

30示例性工艺是热喷射、ETP、 CVD和离子电镀。 30 is an exemplary process thermal spraying, ETP, CVD, and ion plating.

保护涂层25的厚度依据涂覆和所使用的工艺例如CVD、离子电镀、 ETP等改变,取决于涂覆,范围从liim到几百jum。 The thickness of the protective coating 25 and the coating process used based on, for example, CVD, ion plating, ETP, etc. vary depending on the coating, ranging from several hundred to liim jum. 当使用较厚的保护层时,通常希望更长的寿命循环。 When using a thicker protective layer is generally desirable longer life cycle.

抗腐蚀连接体和结构:在一般使用腐蚀气体的晶片处理环境下,氟 Linker and corrosion-resistant structures: In general, the use of corrosive gas to the wafer processing environment, fluoro

5化物基气体的原子进入会通过接触区域快速侵蚀晶片处理设备的部件或具有机械部件例如电连接体、包括但不限于气体供给沟道、凹进区域、 突出区域、MESA的插入物、例如提升销孔、螺栓孔、盲孔等通孔的功能构件。 5 atomic group compound gas entering member will quickly erode the wafer processing apparatus or with a contact region by mechanical means such as electrical connectors, including but not limited to the gas supply channel, the recessed region, the protruding region, the MESA insert, such as a poppet functional component pin hole through holes, bolt holes, blind holes and the like. 功能构件的实例包括但不限于电线、片、插入物和通孔等,其穿透接触区域,由此产生了侵蚀基本部件例如基板的腐蚀气体的间隙。 Examples of functional components include, but are not limited to wire, films, inserts and the like through holes which penetrate the contact region, thereby creating a gap, for example, the basic components of the etching gas corrosion of the substrate.

10 在本发明的一个实施例中,电极的引线、机械部件和用于贴附功能 10 In one embodiment of the present invention, the lead electrodes, and mechanical means for attaching functional

构件的扣件涂布具有符合基本材料热膨胀的足够易延性性质的导电抗蚀刻材料。 Coated fastener member having a conductive anti-etching material is easy to comply sufficiently ductile properties of thermal expansion of the base material. 在另一实施例中,电极本身涂布有导电抗蚀刻材料。 In another embodiment, the electrode itself is coated with a conductive anti-etching material. 适合的抗蚀刻材料的实例包括但不限于镍、铬、超耐热合金、或当施加涂层时具有〉5%延性延长的其它导电材料。 Examples of suitable etch-resistant material include, but are not limited to, nickel, chromium, superalloy, or having> other conductive material 5% ductility extended when the coating is applied. 在一个实施例中,涂层具有0. 000004 In one embodiment, the coating having a 0.000004

15英寸至O. OIO英寸的平均厚度,包括具有符合基底基板的CTE的足够延性性质的材料,以便保护涂层当在高温暴露到有害半导体处理环境时保持至少90%的裂缝是空的。 The average thickness of about 15 inches to inches O. OIO, comprising a material having sufficient ductility properties meet the CTE of the base substrate, so that the protective coating remains at least 90% of the fractures are empty when exposed to the harmful high-temperature semiconductor processing environment. 在第二实施例中,涂层包括具有延性的材料, 以^t涂层材料补偿CTE差/失配,同时仍在其表面上保持至少95%的裂缝是空的。 In the second embodiment, the coating comprises a ductile material, the coating material to ^ t CTE difference compensation / mismatch on the surface while still retaining at least 95% of the cracks is empty. 指的是裂缝的无裂缝在视觉上或甚至在SEM下看也不能观察 Refers to a crack or crack-free even under SEM can not see visually observed

20到。 20. 在第三实施例中,涂层具有O. 00001英寸至0.005英寸的厚度。 In the third embodiment, the coating has inch O. 00001 to a thickness of 0.005 inches. 在第四实施例中,0. 00005英寸至0. 025英寸的厚度。 In the fourth embodiment, .00005 to .025 inches in thickness.

在本发明的一个实施例中,使用定制的连接体提供对连接的抗蚀刻保护。 In one embodiment of the present invention, using a custom linker provides connections etching resistant protection. 在第二实施例中,抗蚀刻导电材料用于保护暴露的电连接体不受侵蚀环境的影响。 In the second embodiment, the anti-etching the conductive material for the environmental protection of the exposed electrical connector from erosion.

25 在另一实施例中,抗蚀刻组分用作填料、粘接剂、胶、或密封剂, Example 25 In another embodiment, the anti-etch component used as a filler, an adhesive, glue or sealant,

以进一步提供对接触连接体的保护不受侵蚀气体原子进入的影响。 Contacting in order to further provide protection to the linker atom is not affected by the gas entering the erosion. 如下参考附图进一步示例本发明的抗腐蚀连接体的实施例。 Example corrosion linker below with reference to the accompanying drawings of a further example of the present invention.

图3是本发明的晶片处理设备10的一个实施例的截面图,图案化的电极200在基底基板100的表面上,涂布有抗腐蚀涂层300。 10 FIG. 3 is a cross-sectional view of an embodiment of a wafer processing apparatus according to the present invention, electrode 200 is patterned on a surface of the base substrate 100 is coated with a corrosion resistant coating 300. 图案化的30 电极200可以用作加热电极和/或卡盘电极,这取决于应用。 The patterned electrode 30 may be used as the heating electrode 200 and / or the chuck electrode, depending on the application.

连接螺母220用于将螺紋连接杆210扣紧在适当位置。 A threaded coupling nut 220 for fastening the connecting rod 210 in place. 在一个实施例中,螺紋连接杆210和连接螺母220由具有CTE紧密匹配基板100和涂层300的CTE的相同的难熔佥属材料制成。 In one embodiment, the threaded connecting rods 210 and 220 connecting nut having closely matched CTE Qian same refractory metal material CTE of the substrate 100 and coating 300 is made. 一个实例是具有CTE紧密匹配A1N层的CTE的钼。 One example is molybdenum has a CTE that closely matches the CTE of the A1N layer. 在第二实施例中,它们由紧密匹配的CTE的不5 同材料制成。 In the second embodiment, they are made are not the same material 5 closely match the CTE. 在一个实施例中,杆210和/或螺母220另外电镀有镍或其它导电抗蚀刻材料(未示出)。 In one embodiment, the rod 210 and / or nut 220 additionally plated with nickel or other conductive etch-resistant material (not shown). 如所示的,杆210穿入基板IOO中的螺孔。 , Rod 210 penetrates the substrate IOO screw holes as shown. 在一个实施例中(未示出),杆210压入配合基板中的盲孔,或胶合到基板IOO中的孔。 In one embodiment (not shown), the rod 210 is pressed into the blind bore with the substrate, or glued into a hole in the substrate IOO.

如有时在尖角或裂缝中难以提供适当的涂布,在沉积工艺即称为"部10分遮蔽,,,可能会导致较薄的涂层限制晶片处理设备的寿命,图4是图3针对部分遮蔽的不同实施例的截面图。在该实施例中,连接螺母221 使部件逐渐变细以促进过涂布(over-coating)工艺以在过渡区中从螺母221到基板100充分地涂布。在另一结构(未示出)中,螺母221具有圆角,其减小了操作中过涂布时的应力和分层的可能性。 15 在如图5所示的晶片处理设备10的另一实施例中,在从螺母到基板 If it is difficult to provide a suitable coating or cracks in the corners, i.e., a deposition process is referred to "shield portion 10. ,,, thinner coatings may cause the wafer processing apparatus limits the lifetime, FIG. 4 is a diagram for 3 partial cross-sectional views of different embodiments of masking. in this embodiment, the connecting member so that the nut 221 is tapered to facilitate coating over (over-coating) process in the transition zone to the nut 221 from the substrate 100 to sufficiently coated in another configuration (not shown), the nut having rounded corners 221, which reduces the possibility of operator stress and delamination of the coating over time. in the wafer processing apparatus 15 as shown in FIG. 10 in another embodiment, the nut from the substrate to

的过渡区,连接螺母221进一步提供有密封物,即抗腐蚀珠、高温一致的填料230。 Transition region, the coupling nut 221 is further provided with a seal, i.e., corrosion-resistant beads, uniform high temperature packing 230. 在一个实施例中,填料230用作图4中的锥形螺母,以最小化沉积工艺的部分遮蔽。 In one embodiment, tapered nut 230 is used as a filler in FIG. 4, to minimize the deposition process shielding portion. 在另一实施例中,在保护涂层300没有提供足够的保护并过早耗费的情况下,填料230提供对腐蚀核素的第二防护20 线。 In the case of another embodiment, it does not provide sufficient protection in the protective coating and prematurely consumed 300, packing 230 provides corrosion protection nuclides second line 20.

图6是图3中所示的组件10的另一实施例的截面图,除增加另外的电极202外。 FIG 6 is a sectional view of another assembly shown in FIG. 3 of Example 10, except the outer electrode 202 is further increased. 如所示的,电极200可以是加热电极,另一电极202可以是卡盘电才及。 As shown, electrode 200 may be a heater electrode, the other electrode 202 may be electrically before and chuck. 可选地两个电才及可以独立地控制加热电才及。 Alternatively, only two electrical and electric heating can be controlled independently and only. 在另一实施例中,电极可以独立地控制卡盘电极。 In another embodiment, the electrodes can be controlled independently of the chuck electrode. 25 图7是图4中所示的组件10具有锥形连接螺母221的另一实施例的 FIG 25 is a component 7 shown in FIG. 410 having another embodiment of a tapered coupling nut 221

截面图,增加了一个另外的电极202,其可以用作加热电极或卡盘电极。 Sectional view, a further increase in the electrode 202, which may be used as a heating chuck electrode or electrodes.

图8是图5中所示的组件10的加热实施例的截面图,增加了对基板 8 is a sectional view of an embodiment of the heating assembly 10 shown in FIG. 5, an increase of the substrate

的第二电极202。 A second electrode 202. 如所示的,密封物/填料230提供从螺母到基板的过渡 The sealing material / packing 230 shown in the nut to provide a transition from the substrate

区用于所有的电连接。 Area for all electrical connections. 30 图9是晶片处理设备10的另一实施例的截面图。 30 FIG. 9 is a sectional view of another embodiment 10 of the wafer processing apparatus. 在该实施例中,在 In this embodiment, the

涂覆保护涂层300并在接触区域部分移除之后,应用抗腐蚀连接杆210 和螺母220。 Protective coating 300 and the contact region portion after the removal, application of anti-corrosion connecting rod 210 and a nut 220. 而且在该实施例中,(部分暴露的)电极200、连接杆210、 螺母220、其它部件例如垫圈、弹簧等(未示出)是导电的且抗腐蚀的。 Also in this embodiment, (the exposed portion) of the electrode 200, connecting rod 210, a nut 220, other components such as a washer, a spring (not shown) is electrically conductive and corrosion resistant. 在一个实施例中,这些部件包括抗腐蚀的导电材料,该材料选自镍、钴、 In one embodiment, the corrosion resistant member comprising a conductive material, a material selected from nickel, cobalt,

5铁,铪、锆和铈的氧化物和碳化物、和其混合物的组,具有紧密匹配基板100的CTE的CTE。 Group 5 iron, hafnium, zirconium and cerium oxides and carbides, and mixtures thereof, having a CTE closely matched to the CTE of the substrate 100. 实例包括但不限于商业可获得的商标为Invar和Kovar的超耐热合金。 Examples include, but are not limited to a trademark, commercially available superalloys of the Invar and Kovar. 该结构允许较低的熔化温度抗腐蚀连接材料,例如铝和合金、铪和锆碳化物和氮化物等,以用作不需要能够经受得住过涂布工艺的连接部件。 This structure allows lower melting temperature corrosion-resistant material is connected, for example, aluminum and its alloys, zirconium and hafnium carbides and nitrides and the like, need not be able to serve as the connecting member, to withstand the coating process. 施加保护涂层300的过涂布工艺有时可以是高温 Through a coating process applying a protective coating 300 may be a high temperature sometimes

10 工艺例如热喷射、高温CVD或其它沉积工艺。 10 processes such as thermal spraying, thermal CVD or other deposition processes.

图IO是图9的实施例变形的截面图。 FIG IO is a sectional view of a modified embodiment of FIG. 在该实施例中,电极200电镀/涂布有导电保护涂层205。 In this embodiment, the electrode 200 plated / coated with a conductive protective coating 205. 在一个实施例中保护涂层205包括抗蚀刻和导电材料,该材料选自镍、钴、铁;铪、锆和铈的氧化物和碳化物、和其混合物的组,具有紧密匹配电极200的CTE的CTE。 In one embodiment the protective coating embodiment 205 comprises etching resistant and electrically conductive material, the material is selected from nickel, cobalt, iron; group of hafnium, zirconium and cerium oxides and carbides, and mixtures thereof, having a closely matching electrode 200 CTE of CTE. 涂层205可以利 Coating 205 can utilize

15 用本领域已知的工艺涂敷到电极200上,该工艺包括但不限于电镀、无电镀、上油漆、喷射、蒸发、溅射、CVD等。 15 processes known in the art is applied to the electrode 200, the process including but not limited to electroplating, electroless plating, paint, spraying, evaporation, sputtering, CVD and the like.

图11是本发明的另一实施例的截面图,其中电极200提供有抗腐蚀填料230。 FIG 11 is a sectional view of another embodiment of the present invention, wherein the electrode 200 provides a corrosion resistant filler 230. 使用抗腐蚀填料/密封物230消除了用于电极200的抗腐蚀材料或在电极上的保护涂层205的需要(如图IO所示)。 Use corrosion resistant packing / seal 230 eliminates the need for corrosion-resistant materials for the electrode 200 or protective coating on the electrode 205 (shown in FIG IO). 在一个实施例中, In one embodiment,

20 电极200包括钼、具有CTE紧密匹配A1N的CTE的材料作为基板,但对于腐蚀氟化物气体的某些晶片处理环境不需要抗腐蚀性质。 20 include molybdenum electrode 200, a material having a CTE that closely matches the CTE of A1N as a substrate, but for some wafer processing environment need not corrosive fluoride gas corrosion resistance properties.

在另一实施例的图12中,凹口钻入设备IO的陶瓷芯基板中,并且将加工的导电螺紋插入物240安装在该凹口中并用凹螺母220栓紧在适当位置。 In another embodiment of the embodiment of FIG. 12, the ceramic core substrate recess drilled in the IO devices, and the processing of the conductive insert 240 mounted in a threaded recess and the nut recess 220 bolted in place. 用抗腐蚀填料230填充杆和螺母周围的空间。 A filler 230 filled space surrounding rods and nuts with corrosion resistant. 在该实施例中, In this embodiment,

25 在应用电极200和随后的保护涂层300之前,首先施加螺紋插入物240、 螺母220和填料230并装配在适当位置。 25 before the subsequent application electrode 200 and the protective coating 300 is first applied to the threaded inserts 240, 230 and the nut 220 and the filler assembly in place. 在保护涂层之后可以将连接杆210 (未示出)旋进加工的螺紋插入物中。 After the protective coating may be link 210 (not shown) screwed into the threaded inserts machined. 在该实施例中使用螺紋插入物和填料在应用中尤其是有利的,其中对在陶乾基板中加工螺紋孔有挑战性。 Threaded insert and filler applications, especially advantageous in this embodiment, in which the dry ceramic substrate processed in a threaded hole challenging. 在应用中也可以使用插入物,其中难以应用或选择匹配在压入配合 Inserts may be used in applications where it is difficult to match the selected application or press fit

30装配中使用的CTE的粘接剂。 CTE of the adhesive used in the assembly 30.

图13是图12的实施例的变形,其中代替螺紋插入物使用杆250组件,并且提供另外的螺母220来进一步加强和提供对连接的保护。 FIG 13 is a modification of the embodiment of Figure 12, wherein the threaded insert in place using the lever assembly 250 and nut 220 to provide additional protection and to further strengthen the connection.

图14是利用插入物的另一实施例的截面。 FIG 14 is a cross-section of the insert with another embodiment. 如所示的,加工的导电插入物240安装在陶瓷基板中钻孔的凹口中。 As shown, the processing of the conductive insert 240 mounted in a recess drilled in the ceramic substrate. 另外插入物电镀有镍或其它5导电抗蚀刻材料(未示出)。 Further the insert 5 plated with nickel or other conductive etch-resistant material (not shown). 用螺母220将插入物栓在适当位置。 The nut insert the plug 220 in place. 插入物足够长以便它们伸出基板的表面(与晶片接触晶片处理设备的一侧相对)。 Long enough to insert their projecting surface of the substrate (in contact with the side of the wafer opposite the wafer processing apparatus). 用抗腐蚀填料230填充螺母220周围的自由空间。 The free space around the filler 220 is filled with a corrosion-resistant nuts 230. 在该实施例中, 在应用电极200之后,但在应用保护涂层300之前,将插入物240、螺母220和填料230施加到最终的组件中。 In this embodiment, after application of the electrode 200, but before application of the protective coating 300, the insert 240, the nut 220 and the filler 230 is applied to the final assembly.

10 图15是图14的晶片处理设备的微小变形。 10 FIG. 15 is a slight modification of the wafer processing apparatus 14 of FIG. 在该实施例中,仅将保 In this embodiment, only the security

护涂层300施加到不与晶片接触的表面上。 Protective coating 300 applied to the surface not in contact with the wafer. 对于一些应用,有时保护涂层300包括不理想物质,即缺陷和不希望的成分,例如由于灰尘和气相成核引起的小结,或不均匀的涂布/非一致的涂层厚度。 For some applications, the protective coating 300 may include undesirable substances, i.e., defects and undesirable components, such as coating due to dust and gas summary nucleation caused or uneven / non-uniform coating thickness. 表面的不理想物质会防止晶片进行最佳的热接触和/或使晶片未对准。 Undesirable material prevents the surface of the wafer for optimal thermal contact and / or misalignment of the wafer. 通过避免如同该图 By avoiding this figure as

15 15的实施例中的晶片接触表面上的沉积,可以减轻缺陷。 Deposition on the contact surface of the wafer 15 in Example 15, the defect can be reduced.

图16示出了图14中的实施例的变形,进一步包括象基板中的凹口和/或突出区域和/或台地270 —样的特征。 Figure 16 shows a modification of the embodiment in FIG 14, further comprising a recess in the substrate and / or the projecting region and / or the platform 270 like - like features. 在一个实施例中,突出区域用于整个基板表面。 In one embodiment, the projection area for the entire substrate surface. 在另一实施例中,突出表面270用于接触晶片的至少表面。 In another embodiment, the projecting surface 270 for contacting at least the surface of the wafer. 应用保护涂层300以沿着这些特征270的一般轮廓前进。 Application of the protective coating 300 generally along the contour of the features 270 forward. 在一 In a

20些实施例中,突出表面区域还减轻了由于减小的与晶片的总接触面积引起的不理想的缺陷/危险。 20 some embodiments, the projected surface area also mitigates undesirable defects due to the reduced total contact area of ​​the wafer / risk.

图17是示出结合图15和16中的设备的特征与未涂布的突出表面270的实施例的截面图,由此最小化了由于象小结和不均匀或不一致的保护涂层厚度一样的不理想物质引起的不良接触问题。 FIG 17 is a sectional view of the embodiment shown in and binding apparatus 16 of FIG. 15 wherein the uncoated surface of the projection 270, thereby minimizing the thickness of the protective coating due like nodules and uneven or inconsistent same bad contact problems caused by undesirable substances.

25 图18示例了晶片处理设备10的另一实施例。 25 FIG. 18 illustrates a wafer processing apparatus 10 of another embodiment. 在该实施例中,基板 In this embodiment, the substrate

100不是陶瓷的但是导电材料,例如石墨或例如钼的高熔点金属。 However, ceramic is not conductive material 100, such as graphite or a refractory metal, for example molybdenum. 如所示的,基板100进一步涂布有(任选的)垫层或粘接促进层211,例如TaC。 , 100 further coated substrate as shown in (optional) adhesion promoting layer or cushion 211, e.g. TaC. 通过本领域已知的方式例如压入配合、胶合或螺紋将绝缘插入物212插入到基板210中。 A manner known in the art, for example, press-fitting, gluing or the threaded insert 212 is inserted into the insulating substrate 210. 随后用绝缘底涂层213涂布基板。 Then the substrate 213 is coated with an insulating undercoat. 在下一步骤 In the next step

30 中,安装电极200,之后插入杆210和螺母220,最后施加保护涂层300。 30, the mounting electrodes 200, 210 after insertion of the rod and the nut 220, and finally applying a protective coating 300.

两层都通 Through both layers

过包括但不限于CVD、热CVD、 ETP、离子电镀等的本领域已知的涂布工艺施力口。 Including but not limited to over-CVD, thermal CVD, ETP, ion plating, etc. The coating process known in the art urging port.

图19示例了图18中的实施例的变形。 FIG 19 illustrates a modification of the embodiment of FIG. 18. 在该实施例中,利用涂布的5 通孔219代替陶资插入物,在施加保护涂层300之前,通过该通孔219 插入电极杆210并将螺母220贴附在杆210的任一侧上。 In this embodiment, by coating the through hole 219 in place of 5-owned ceramic insert, before applying a protective coating 300, 219 is inserted through the through-hole electrode 210 and a nut 220 attached to the rod on either side of the lever 210 on. 在一个实施例中(未示出),螺母220是锥形的/圆形的。 In one embodiment (not shown), the nut 220 is tapered / rounded. 在另一实施例中(未示出), 填料230用于进一步密封/提供连接的保护。 Examples / protection connections (not shown), the seal packing 230 for further another embodiment.

图20是晶片处理设备10的另一实施例的截面图。 FIG 20 is a sectional view of another embodiment 10 of the wafer processing apparatus. 在该实施例中, 10基板401包括导电材料例如石墨,过涂布有包括例如热解氮化硼材料的电绝缘层402。 In this embodiment, the substrate 401 comprises a conductive material 10 such as graphite, for example, over coated with pyrolytic boron nitride material comprising an electrically insulating layer 402. 由例如热解石墨制成的电极200施加在涂层402上。 Is applied by the electrodes, for example, pyrolytic graphite is formed on the coating 200 402. 在所示的一个实施例中,电极200涂布有至少一个另外的绝缘涂层403。 In one embodiment illustrated embodiment, the electrode 200 is coated with at least one further insulating coating 403. 在下一个步骤中,部分暴露出电极200以<吏应用抗腐蚀垫圈404,例如烧结的氮化铝垫圏。 In the next step, the electrode 200 is partially exposed to <Official application-eroding washers 404, such as sintered aluminum nitride rings of the pad. 然后整个组件过涂布有抗蚀刻热解石墨涂层405。 The entire assembly is then coated with an etching resist over pyrolytic graphite coating 405. 15最后,导电抗腐蚀压触点406,例如包括例如氮化铪、钴、镍、科伐超合金等材料的弹簧触点,放置在适当的位置。 15 Finally, corrosion resistant conductive pressure contact 406, such as a spring, for example, contact material comprising hafnium nitride, cobalt, nickel, Kovar super alloy, placed in the appropriate position.

图21是图20的实施例的变形,其中使用螺栓407代替抗腐蚀压触点。 FIG 21 is a modification of the embodiment of Figure 20, wherein the corrosion resistant bolts 407 instead of pressure contacts. 在该实施例中,通过衬有抗腐蚀绝缘村里408的通孔插入螺栓407。 In this embodiment, the through-hole is lined with a corrosion-resistant insulating village 408 inserted into the bolt 407. 在一个实施例中,带衬通孔是烧结陶资管的形式。 In one embodiment, the through-hole is lined with the sintered ceramic in the form of information management. 20 应当注意,本发明的抗腐蚀结构不限于所示例的实施例,实施例的 20 It should be noted that the corrosion-resistant structure of the present invention is not limited to the exemplary embodiments, the embodiments

特征可组合或改进,允许实施例的改变,而不脱离具有抗腐蚀连接的晶片处理的思想。 Or improved characteristics may be combined, allowed to change the embodiment without departing from the thought process wafer having corrosion resistant connection.

抗腐蚀填料/粘接剂/保护密封剂:如具有抗腐蚀连接的本发明各个实施例的图所示的,在许多实施例中使用抗腐蚀填料230。 Corrosion resistant filler / adhesive / sealant Protection: As with FIG various embodiments of the present invention shown connected to corrosion, corrosion-resistant filler 230 used in many embodiments.

25 如在此所使用的,术语"填料,,可与"密封剂,,、"胶"、"粘接 25 As used herein, the term "filler ,, with" sealant ,,, "plastic" as used herein, "bonding

剂"或"保护密封剂"互换使用,指的是可以进一步保护晶片处理设备中的部件例如电极、连接体、杆、例如螺母、铆钉等的扣件不受晶片处理室中的极微侵蚀的材料。填料可以包括显示出耐受升高温度并与基板和例如石墨加热元件、金属扣件等的其它部件热一致的任何的陶乾、玻 "Or" protective sealant "are used interchangeably, it refers to a protective member may further wafer processing apparatus such as electrodes, a linker, stem, e.g. minimal erosion nuts, rivets or the like fasteners from the wafer processing chamber the materials may include fillers show any increase in temperature resistant ceramic dry and consistent with the other components of the substrate and the thermal heating element such as graphite, metal fasteners or the like, glass

30璃或玻璃-陶瓷材料。 30 glass or glass - ceramic material. 填料还与半导体处理环境化学一致。 Fillers also consistent with the chemical environment of the semiconductor process.

如果填料基质的热膨胀系数(CTE )与相邻基板的CTE紧密匹配则在此把填料看作热一致,由此在热循环期间不同热膨胀的材料不会导致填料层离或剥离。 If the filler matrix coefficient of thermal expansion (CTE) of the substrate adjacent to closely match the CTE filler is considered to be equivalent to this heat, whereby the different thermal expansions during thermal cycling of the filler material does not cause delamination or peeling. 在一个实施例中,填料包括具有值在陶瓷基板和金属互连/扣件之间的CTE的材料。 In one embodiment, the filler comprises a material having a CTE values ​​between the ceramics substrate and the metal interconnect / fastener of. 硼硅酸玻璃、铝硅酸玻璃和高石英玻璃以及5玻璃的混合物是适合的填料的实例。 Borosilicate glass, aluminosilicate glass and a mixture of high silica glass and the glass 5 are examples of suitable fillers.

在此看作与半导体处理环境化学一致的填料指的是与腐蚀气体或其等离子体反应性低的填料;即使出现与腐蚀气体中的氟反应,所形成的物质也是高沸点化合物;并且对于抑制由等离子体或腐蚀气体造成的腐蚀是有效的。 The semiconductor processing regarded as consistent with the chemical environment of the filler refers to the etching gas or the plasma of the low-reactive filler; even if the fluorine etching gas reaction, the formed material is high-boiling compound; and for suppressing corrosion caused by the plasma or etching gas is effective.

10 在一个实施例中,填料组成包含选自由元素周期表的2a族、3a族和4a族的元素组成的族的至少一种元素。 10 In one embodiment, the composition of a filler selected from the group consisting of Group 2a of the Periodic Table containing at least one element of the group consisting of elements of Group 3a and 4a. 在此所提及的2a族指的是包括Be、 Mg、 Ca、 Sr和Ba的碱土金属元素。 Group 2a referred herein is intended to include Be, Mg, Ca, Sr and Ba alkaline earth metal elements are. 在此所提及的3a族指的是Sc、 Y或镧系元素。 Group 3a mentioned herein refers to Sc, Y or lanthanide. 在此所提及的4a族指的是Ti、 Zr或Hf。 Mentioned herein refers to the group 4a is Ti, Zr or Hf.

用作填料的适合的组成的实例包括但不限于铝硅酸镧(LAS)、铝硅 Examples of compositions suitable as fillers include, but are not limited to lanthanum aluminum silicate (LAS), alumina-silica

15 酸镁(mas)、铝硅酸钙(cas)和铝硅酸钇(yas)。 15 magnesium (mas), calcium aluminosilicate (CAS) and yttrium aluminum silicate (yas). 特定基质材料的选择是以计划应用的预期需求为基础。 Select a specific matrix material is based on expected demand planning application is based. 在一个实施例中,选择基质材料来匹配具有理论平均的CTE为4. 9 x 10—7K的A1N涂层、具有理论的CTE 为5. 3 x 10—7K的石墨加热元件的加热应用匹配。 In one embodiment, the matrix material selected to match the CTE of the average theoretical 4. 9 x A1N 10-7K the coating, having a CTE matching theory for heating applications graphite heating element of 5. 3 x 10-7K. 在另一实施例中,选择cte值在4. 9 x 10-Vk的a1n涂层的cte和难熔金属扣件的cte之间的填 In another embodiment, the value select cte and cte filled between the refractory metal fasteners cte A1N coating 4. 9 x 10-Vk of

20 料,难熔金属扣件包括例如鴒W、钼Mo、钽Ta、或例如鵠化铜(CuW)、 钼化铜(对于85/15 MoCu具有6. 9ppm/C的CTE的CuMo )、锰化钼(MoMn ) 等合金的材料。 20 materials, including, for example, refractory metal fasteners ling W, molybdenum Mo, tantalum Ta, e.g. swan or copper (the CuW), copper molybdenum (85/15 MoCu for having CTE 6. 9ppm / C is as CuMo), manganese materials molybdenum (MoMn) alloy and the like.

在一个实施例中,填料是基于BaO-Al203-B2(h-Si02玻璃的合成物, 其中任选地添加La203、 Zr02和NiO来调节玻璃的CTE以适当地匹配基板 In one embodiment, the filler composition is based on BaO-Al203-B2 (h-Si02 glass, wherein the optionally added La203, Zr02 and NiO CTE adjusted appropriately matched to the glass substrate

25 的CTE。 CTE 25's. 在一个实施例中,该合成物包括30-40摩尔仰aO、 5-15摩尔%A1203、 10-25摩尔。 In one embodiment, the composition comprises 30-40 mol Yang aO, 5-15 mol% A1203, 10-25 mol. 風、25-40摩尔°歸2、 0-10摩尔%的Lal O-IO 摩尔。 Wind, 25-40 mol normalized ° 2, 0-10 mol% of the molar Lal O-IO. /。 /. Zr(h、 0-10摩尔y。Ni0, B2(WSi02的摩尔比范围从0. 25到0.75。 在另一实施例中,对于填料添加足够量的La203、 Zr(h或NiO以具有匹配A1N作为涂层和石墨作为基层的CTE,添加La几和N i 0增加了玻璃的CTE Zr (h, 0-10 mol y.Ni0, B2 molar ratio (WSi02 from 0.25 to 0.75. In another embodiment, a sufficient amount of the filler added La203, Zr (h NiO to have a match or A1N as a coating and graphite as CTE base layer, and adding a few N i 0 La increases CTE glass

30 以及添加Zr02降低了玻璃的CTE。 30 and adding Zr02 reduces the CTE of the glass.

在另一实施例中,填料是组合物基的钡镧硅酸盐(BLS)玻璃,常用组成范围是30-35摩尔。 In another embodiment, the filler is barium silicate composition lanthanum group (the BLS) glass, commonly composition range is 30-35 mole. /。 /. BaO、 10-15摩尔°/。 BaO, 10-15 mol ° /. 1^203和50-60摩尔y。 203 and 50-60 moles ^ 1 y. Si(h,对于玻璃具有10-12 ppm的CTE和在7501C到85(TC范围的软化温度。 Si (h, for a glass having a CTE 10-12 ppm and at 85 to 7501C (softening temperature range of TC.

在又一实施例中,填料是基于Y203-Al203-Si02 ( YAS )玻璃的组成物, 5 钇含量范围从25到55wt.%、熔点小于1600。 In yet another embodiment, the filler composition is based Y203-Al203-Si02 (YAS) glass, yttrium content ranging from 25 5 to 55wt.%, A melting point of less than 1600. C和玻璃过渡温度(Tg )在884至895。 C and a glass transition temperature (Tg) at 884-895. C的窄范围内,并且其中CTE通常随着增加丫203而增加并且随着增加Si02而降低。 C within a narrow range, and wherein the CTE Ah 203 generally increases with increasing Si02 increases and decreases. 在一个实施例中,YAS填料组成包括25-55 wt. % Y晶、13至35 wt. % Ah(h和25至55 wt. % SiO"CTE范围从31到70 1(T7/K。 在第二实施例中,YAS组成包括都以摩尔%计的良好化学耐受性质的17 10 Y2(h-19 Al2(h—64 Si(h。 In one embodiment, YAS filler comprises 25-55 wt.% Y crystals 13 to 35 wt.% Ah (h and 25 to 55 wt.% SiO "CTE range out of the 31 to 70 1 (T7 / K. In in the second embodiment, YAS compositions have good chemical resistance properties comprising in mole percent of 17 10 Y2 (h-19 Al2 (h-64 Si (h.

在一个实施例中,将掺杂剂足够量地添加到YAS玻璃组成以最佳化CTE来匹配相邻基板。 In one embodiment, the dopant is added to a sufficient quantity YAS glass composition to optimize the substrate adjacent to match the CTE. 摻杂剂的实例包括BaO、 La203、 Zr02或NiO,具有最大成分以增加玻璃的CTE,除了降低玻璃的CTE的Zr02之外。 Examples of dopants include BaO, La203, Zr02 or NiO, with the largest component to increase the CTE of the glass, in addition to reducing the CTE of the glass outside of Zr02.

在一个实施例中,填料组成包括在除氧外的金属原子的原子比方面15 1到30原子%的2a族、3a族或4a族元素和20到99原子°/。 In one embodiment, the filler composition including 15 1 to 30 atomic% of Group 2a aspect ratio of metal atoms of oxygen outside, 3a or 4a elements and Group 20 to 99 atoms ° /. 的Si元素。 Si element. 在铝硅酸玻璃的一个实施例中,组成包括20到98原子%的Si元素、1 到30原子y。 In one embodiment of the aluminosilicate glass embodiment, the composition comprises a Si element 20-98 atomic%, 1 to 30 atomic y. 的Y、 La或Ce元素和1到50原子%的Al元素。 Of Y, La or Ce element and 1-50 atomic% of Al element. 在另一实施例中,铝硅酸玻璃具有一组分以便各自的金属元素(Si: Al:族3a )落入(70:20:10 )、 ( 50:20:30 )、 (30:40:30 )、 ( 30:50:20 )、 ( 45:50:5 ) 20和(70: 25: 5 )的连接各个点的范围内。 In another embodiment, the aluminosilicate glass has a component for the respective metal elements (Si: Al: Group 3a) falls (70:20:10), (50:20:30), (30:40 : 30), (30:50:20), (45: 50: 5) and 20 (70: 25: 5) is connected to various points of the range. 在氧化锆硅酸盐玻璃填料的一个实施例中,该组成包括20到98原子°/。 Zirconia silicate glass filler one embodiment, the composition comprises from 20 to 98 atoms ° /. 的Si元素、l到30原子y。 Si element, l to 30 atoms y. 的Y、 La 或Ce元素和1到50原子°/。 Of Y, La or Ce element atoms and from 1 to 50 ° /. 的Zr元素。 The Zr elements. 在一个实例中,氧化锆硅酸盐玻璃具有一组分以便各个金属元素(Si:Zr:3a族)的原子比落入(70:25:5 )、 ( 70:10:20 )、 ( 50:20:30 )、 ( 30:40:30 )、 ( 30:50:20 ) 25 和(45:50:5 )的连接各个点的范围内。 Atom (3a Group Si:: Zr) ratio falls in one example, silicate glass, zirconium oxide having a metal element so that each component (70: 25: 5), (70:10:20), (50 : 20: 30), (30:40:30), (30:50:20) and 25 (45: 50: 5) is connected to various points of the range. 在氧化锆硅酸盐玻璃填料的另一实施例中,各个金属元素(Si:Zr:3a族)的原子比落入(70: 5 )、 (70:10:20 )、 ( 50:22:28 )、 ( 30:42:28 )、 ( 30: 50: 20 )和(45: 50: 5 ) 的连接各个点的范围内。 Another glass filler zirconia embodiment, each metal element atoms (Si: 3a Group: Zr) ratio falls (70: 5), (70:10:20), (50:22: 28), (30:42:28), (30: 50: 20) and (45: 50: 5) is connected to various points of the range. 在含2a族的氧化锆硅酸盐玻璃的情况下,氧化锆硅酸盐玻璃具有一组分以便各个金属元素(Si: Zr: 2a族)的原子比落30 入(70: 25: 5 ) 、 ( 45: 25: 30 ) 、 ( 30: 40: 30 ) 、 ( 30: 50: 20 )和(50: 45: 5 ) 30 falls into the atomic ratio (Group 2a Si:: Zr) (70: 25: 5) in the case where the zirconia-containing silicate glass of Group 2a, zirconia silicate glass having a metal element so that each component , (45: 25: 30), (30: 40: 30), (30: 50: 20) and (50: 45: 5)

的连接各个点的范围内。 Within the scope of the respective connection points.

在一个实施例中,填料组成是Si02和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗等离子体材料的混合物。 In one embodiment, the filler is Si02 and including Y, Sc, La, Ce, Gd, Eu, Dy oxides, etc., fluoride of one of these metals, or yttrium - aluminum - garnet (YAG) of the mixture plasma resistant material. 可使用这些金属的氧化物的组合物、和/或具5 有氧化铝的金属氧化物的组合物。 Oxides of these metals may be used in the compositions, and / or 5 having an alumina metal oxide composition. 例如,Y^可以与小百分比的Ah(M — 般,以体积计小于约20%)使用以匹配玻璃填料组成的CTE与加热器的下面基板。 For example, Y ^ may be a small percentage of Ah (M - generally, less than about 20 volume%) using the following substrate heater to match the CTE of the glass filler composition.

填料组成的形成方法&应用:在一个实施例中,填料组成是胶或颜料的形式,应用为在本发明的晶片处理器件的接触元件周围的"填料"。 A method of forming a filler & applications: In one embodiment, the filler is in the form of gum or pigment, is applied around the contact element in the wafer processing device of the present invention "fillers." 10在一个实施例中,该组成应用为胶,散布在形成"焊珠"的接触元件或扣件周围。 10 In one embodiment, the adhesive composition is applied, spread around the contact element or fastener to form a "bead" in. 在第二实施例中,该组成应用为涂料,喷射或刷到接触元件或扣件上,形成至少0. 1密耳的保护涂层,保护连接不受半导体处理环境中的氯或氟种类的影响。 In the second embodiment, the composition is a coating application, spraying or brush to the contact element or fastener to form a protective coating at least 0.1 mils, to protect the semiconductor processing environment is not chloro or fluoro type of connector influences. 在第三实施例中,涂覆至少O. 5密耳的保护涂层。 In the third embodiment, the protective coating layer is coated O. least 5 mils.

15 在另一实施例中,利用本领域已知的工艺将填料组成宽泛地涂覆到 15 In another embodiment, using the process known in the art to be broadly applied to filler

加热器组件上,用于施加玻璃-陶资,包括热/火焰喷涂、等离子体放电喷射、溅射和化学汽相沉积,用于至少0. 5密耳的涂布/密封层以密封接触元件和相邻部件之间的开口、裂缝等、以及提供保护涂层到加热器上。 The heater assembly, for applying a glass - ceramic resources, including heat / flame spraying, plasma jet discharge, sputtering and chemical vapor deposition, at least 0.5 mil coating / seal layer to seal the contact elements and the openings between adjacent components, crack, and to provide a protective coating on the heater. 在一个实施例中,保护密封剂涂层具有0. 5到约4密耳的厚度。 In one embodiment, a protective sealant coating has a thickness of about 0.5 to 4 mils. 在另一 In another

20 实施例中,首先在涂布一层玻璃陶乾组成之前将要密封的基板表面加热到至少150-200°C。 20 embodiment, the first layer of glass ceramic dry before coating composition to the substrate surface to be sealed is heated to at least 150-200 ° C.

在用于加热器或晶片支架器件的粘接剂/涂层或密封剂的应用中,该组成提供在半导体处理环境中在> 400"C 、在氧化和还原气氛中保护一长时间段(10小时)。另外,填料组成经过几百个热循环调节由于各个加 Application of an adhesive or a heater for the wafer support element / coating or sealant, the composition provides a> 400 "C, a long period of protection in oxidizing and reducing atmosphere in a semiconductor processing environment (10 h) In addition, hundreds of filler after each heat cycle due plus adjustment

25 热器组件之间的可能的CTE失配产生的应力。 25 may be a CTE between the heat stress generated in assembly with the loss. 在胶应用的一个实施例中,首先碾磨填料组成,形成平均粒度小于100筛孔的"玻璃粉"。 In one embodiment, the application of glue is first milled filler, having an average particle size of less than 100 mesh "frit." 在一个实施例中,玻璃粉具有<80筛孔的平均粒度。 In one embodiment, the glass frit having an average particle size of <80 mesh. 在第二实施例中,小于60筛孔。 In a second embodiment, less than 60 mesh. 在第三实施例中,小于40筛孔。 In a third embodiment, less than 40 mesh.

在一个实施例中,首先以玻璃粉与金属氧化物为80: 20至95: 5的比 In one embodiment, the first metal oxide in the glass frit with 80: 5 ratio: 20-95

30将玻璃粉与金属氧化物粉末(溶液中)混合。 The glass frit 30 and a metal oxide powder (solution) were mixed. 金属氧化物的实例包括但 Examples of metal oxides include, but

不限于氧化铝、氧化^:、氧化钙、氧化钇和氧化锆。 Limited to, alumina oxide, ^ :, calcium oxide, yttrium oxide and zirconium oxide. 在一个实施例中, In one embodiment,

金属氧化物是具有平均粒度约0. 05nim的Ah(h。在第三实施例中,玻璃 A metal oxide having an average particle size of about 0. 05nim of Ah (h. In a third embodiment, the glass

粉与溶液形式例如胶体氧化硅、胶体氧化铝、胶体氧化钇、胶体氧化锆和其混合物的金属氧化物混合。 A metal oxide powder and a solution of colloidal silica, colloidal alumina, colloidal yttria, colloidal zirconia and mixtures thereof, for example, mixing.

5 在一个实施例中,将混合物混合到本领域已知的设备例如球磨机 5 In one embodiment, the mixture was mixed to a device known in the art, for example, a ball mill

中,载流子体溶液形成10-25 wt. °/»栽流子体溶液与75-90 wt1玻璃粉/ 金属氧化物混合物比的浆料或浆糊。 , The precursor solution is formed carrier 10-25 wt. ° / »plant carrier precursor solution with 75-90 wt1 glass frit / slurry or paste of metal oxide mixture ratio. 在一个实施例中,载流子体溶液是小于lwt.。 In one embodiment, the carrier precursor solution is less than LWT .. /。 /. 硝酸的蒸馏水的混合物。 Nitric acid mixture distilled. 在第二实施例中,载流子体溶液是乙醇和蒸馏水的混合物。 In the second embodiment, the carrier precursor solution is a mixture of ethanol and distilled water. 在第三实施例中,载流子体溶液是LiOH。 In a third embodiment, the carrier is a precursor solution LiOH.

10 实例1:在该实例中,玻璃由45 wty。 10 Example 1: In this example, the glass wty 45. 氧化钇、20wt。 Yttrium oxide, 20wt. /。 /. 氧化铝和35 wt% Alumina and 35 wt%

二氧化硅量的反应物级原料的均匀的粉末混合物制备。 Uniform amount of silica powder grade ingredients reactant mixture. 在铂坩埚中在1400。 In a platinum crucible at 1400. C熔融粉末混合物1小时。 C molten powder mixture for 1 hour. 将玻璃熔体注入钢模子中并从680。 The glass melt is injected from the steel mold 680 and sub. C退火到室温12小时。 To C annealing temperature for 12 hours. 利用具有Al203元素的研磨机在丙醇中碾压和碾磨每个玻璃,形成具有平均粒度10G iam的玻璃粉组成物。 Each mill using glass having a rolling element Al203 and milled in propanol, glass frit composition is formed having an average particle size of 10G iam. 15 在下一个步骤中,以75wt. °/»的玻璃粉和25 wt. °/。 In the next step 15 to 75wt. ° / »glass frit and 25 wt. ° /. 胶体氧化铝的量将 The amount of colloidal alumina

玻璃粉加到胶体氧化铝溶液中,以形成玻璃陶瓷粘接胶/粘接剂。 Colloidal alumina solution was added to the glass frit, to form a glass ceramic adhesive glue / adhesive. 胶体氧4匕^吕溶'液可从Nycaol Nano Technologies商业获^寻Nyaco1⑧AL20DW, 在75-79 wt.%蒸馏水中包含20-25 wt. A1203、 < 1 wt. %贿酸。 Dagger Lu ^ 4 oxygen colloidal solution 'was obtained from available commercial Nycaol Nano Technologies ^ find Nyaco1⑧AL20DW, comprising 20-25 wt in 75-79 wt.% Distilled water. A1203, <1 wt.% Bribe acid. 在应用中,加热〉100(TC浆糊以形成保护下面部件的抗蚀刻剂层。高温允许浆 In use, the heating> 100 (TC paste to form an etching resistant layer to protect the underlying component. Allow the slurry temperature

20糊在包括但不限于功能构件、导线、扣件例如螺母、螺栓、铆钉等的接触表面上形成密封。 Paste seal 20 is formed in the contact surface, including but not limited to functional member, wires, fasteners such as nuts, bolts, rivets or the like on.

实例2:导电加热元件(钼锰)沉积在陶乾基板(A1N)上。 Example 2: electrically conductive heating element (Mn Mo) is deposited on the dry ceramic substrate (A1N). 基板包括通孔以允许安装电接触。 The substrate includes a through hole to allow installation of the electrical contact. 在下一个步骤中,利用钼扣件安装镀Ni的钼柱。 In the next step, a molybdenum Mo fastener mounting post Ni plating. 在AlN基板上的镀Ni的钼柱、钼扣件、加热元件和A1N基板之间的 Molybdenum between posts on the AlN substrate of Ni plating, molybdenum fastener, heating element and the substrate A1N

25 接触点周围油漆实例1的粘接剂。 Examples of paint around the contact point of the adhesive 25 1. 接下来,通过CVD工艺用A1N涂布包括接触的整个加热组件。 Next, by a CVD process using A1N coating comprising contacting the entire heating assembly.

在半导体处理环境中具有A1N基板的加热器的测试模拟条件下,在400和50(TC之间的IOO个热循环之后以45°C/min的斜率进行加热器和接触的腐蚀测试。在另一测试中,具有石墨核的加热器在400和600°C Test simulated conditions A1N substrate having a heater in a semiconductor processing environment, and in 400 after 50 thermal cycles between IOO (TC slope 45 ° C / min and a heater in contact with the corrosion test. In another in a test, a graphite heater core 400 and 600 ° C

30 之间以60°C/min的斜率循环100次。 30 between the slope 60 ° C / min to 100 cycles. 测试来确定玻璃陶乾粘接剂在热应 Test to determine the glass ceramic hot dry adhesive should

力下是否充分地进行。 The adequacy carried out under force. 在100个热循环之后,可视检查显示出加热涂布 After 100 thermal cycles, visual inspection showed heating the coated

没有由于热应力引起失效的迹象,表明该组件的CTE充分匹配,包括玻璃陶瓷粘接剂以保护加热器涂布。 No signs of failure due to thermal stresses caused, indicating sufficient matching CTE of the assembly, comprising a glass ceramic adhesive coating to protect the heater.

另外,将加热器安装在真空室中并恢复到近似1毫托的压力。 Further, the heater installed in the vacuum chamber and returned to approximately 1 mTorr. 然后5将功率施加到加热器直至加热器获得40(TC。 一旦在400°C,将加热器暴露到氟/氩等离子体10小时。利用400 sccm (标准立方厘米)的NF3气体和1200 sccm的Ar气体产生了等离子体。在测试期间的室压力是2. 8 托。 5 is then applied to the heater until the heater power is obtained 40 (TC. Once at 400 ° C, the heater is exposed to the fluorine / argon plasma for 10 hr. Using 400 sccm (standard cubic centimeters) of gas and 1200 sccm of NF3 Ar gas plasma is generated. during the test chamber pressure is 2.8 Torr.

在10-小时蚀刻工艺期间在两个加热器上没有观察到显著的电阻改10 变(< 0. 4% )。 10- hour during the etching process was observed no significant resistance change becomes 10 (<0.4%) on the two heaters. 加热被从该室去除并在10小时之后可视观察。 Heat is removed from the chamber and visually observed after 10 hours. 在接触扣件周围没有A1N涂层的失效。 No failure A1N coating around the contact fastener. 在电接触组件和加热器之间和之内没有接触点的失效。 Electrical contact between the heater assembly and a contact point and no failures within. 玻璃陶f:粘接剂用作本发明加热器的良好的密封材料。 Glass ceramic f: heater of the present invention is used as an adhesive excellent sealing material.

实例3:包括从45 wt。 Example 3: comprises from 45 wt. /。 /. 氧化钇、20wt。 Yttrium oxide, 20wt. /。 /. 氧化铝、35% wt。 Alumina, 35% wt. /。 /. 二氧化硅量的反应物级原料的粉末混合物的填料组成与本领域中已知的其它材料比15 较,该材料包括氧化铝、钼、TaC、 A1N、石墨和镍。 The amount of silica filler powder reactant feed grade mixture composed of other materials known in the art more than 15, the material comprises aluminum, molybdenum, TaC, A1N, graphite and nickel. 在该测试中,a)在测试之前测量的样品的尺寸和质量;b)将部件放置在真空室中,然后将其抽吸到近似1毫托的压力;c)将部件加热到所希望的测试温度;d) 在部件之上产生氟/氩等离子体达所希望的时间段;e)测试之后,将部件从该室去除并记录曝光之后的质量。 In this test, a) the size and mass of the sample before the test measurements; b) the component is placed in a vacuum chamber, and to which the suction mTorr approximately 1; c) the member is heated to a desired test temperature; D) generating a fluorine / argon plasma for a desired period of time on the member; then e) testing, the component is removed from the chamber after exposure and record the mass. 如下计算腐蚀率: 20 腐蚀率=质量损失/密度/暴露表面积/时间; Corrosion rate was calculated as follows: 20 = corrosion mass loss rate / density / exposed surface area / time;

其中负腐蚀率表示曝光之后的质量增益,其转变成良好的腐蚀电阻。 Wherein the negative corrosion rate represents a mass gain after exposure, which is converted into a good corrosion resistance.

如下是比较YAS填料组成与其它材料的实验结果。 The following is a comparative experimental results YAS filler and other materials. Mo数据通常可从科学参考文献获得。 Mo generally available from the scientific data reference. _<table>table see original document page 28</column></row> <table> <table>table see original document page 29</column></row> <table> _ <Table> table see original document page 28 </ column> </ row> <table> <table> table see original document page 29 </ column> </ row> <table>

该书写说明使用实例来公开本发明,包括最好的模式,并且还能够使本领域任一技术人员制作和使用本发明。 This written description uses examples to disclose the invention, including the best mode, and also to enable any one of those skilled in the art to make and use the present invention. 本发明的可专利范围由权利要求所限定,并且可包括本领域技术人员出现的其它实例。 The patentable scope of the invention as defined by the claims, and may include other examples that occur to those skilled in the art. 这样的其它实例,如果它们具有不同于权利要求字面语言的结构元件,或如果它们 Such other examples, if they have structural elements different from the literal language of the claims, or if they

5从权利要求的字面语言包括具有不实在差别的等效结构元件,则意指在权利要求的范围内。 5 include equivalent structural elements with insubstantial differences from the literal language of the claims, it is intended that within the scope of the claims. 通过参考将在此指出的所有引证明确结合到这里。 All cited by reference as noted herein expressly incorporated here.

Claims (30)

1.一种用于处理室中的处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数(CTE); 嵌入或设置在基底基板至少表面上的至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0.75到1.25倍范围的热膨胀系数(CTE); 选自电线、突出物、插入物和通孔的组的至少功能构件,其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙; 和用于密封晶片处理设备中的间隙的填料, 其中当将设备暴露到25-600℃温度范围的工作环境时,填料具有小于1000埃每分钟(/min)的蚀刻率,该环境是以下之一:包括卤素的环境、等离子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和操作。 1. A processing apparatus for processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the base substrate having a coefficient of thermal expansion (the CTE of); embedded or disposed on at least one surface of the base substrate at least an electrode selected from the resistance heating electrodes, the plasma generating electrode, the electrostatic chuck electrode and the electron beam an electrode base substrate having a coefficient of thermal expansion CTE of 0.75 to 1.25 times the range (CTE); selected wires, projections, at least functional group of the insert member and the through-hole, wherein the at least one functional member which is spaced from penetrating through the wafer processing apparatus, a gap is generated; and a packing for sealing a gap in the wafer processing apparatus, wherein when the device is exposed 25-600 deg.] C to the temperature range working environment, the filler having an etching rate of less than 1000 angstroms per minute ( / min), and the environment is one of the following: a halogen environment comprises a plasma etching environment, a reactive ion etching environment , plasma cleaning gas purge and ambient environment and operation.
2. 如权利要求1的处理设备,其中填料具有小于1000埃每分钟(A/ 分钟)的蚀刻率,并且该环境在200-600。 2. The processing apparatus as claimed in claim 1, wherein the filler has an etching rate per minute (A / min) is less than 1000 Angstroms, and the environment 200-600. C的温度范围内。 C in the temperature range.
3. 如权利要求l-2中任一项的处理设备,其中填料具有小于500 埃每分钟(A/分钟)的蚀刻率,并且该环境在200-600。 As claimed in claim l-2 processing apparatus according to any one of, wherein the filler has an etching rate of less than 500 Angstroms per minute (A / min), and the environment 200-600. C的温度范围内。 C in the temperature range. 20 20
4.如权利要求1-3中任一项的处理设备,其中填料包括选自如下组的组成物:具有NaZn(P(Kh的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶瓷组成物; BaO-Al20「B20「Si02玻璃;和Si(h和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy 等的氧化物、或这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗25等离子体材料的混合物。 4. The processing apparatus of any one of claims 1-3, wherein the filler comprises a composition selected from the group consisting of: a NaZn (P (high thermal stability of the zirconium phosphate of the NZP structure Kh; selected from the group comprising Group 2a, 3a glass of at least one element from the group consisting of group 4a and group - ceramic composition; BaO-Al20 "B20" Si02 glass; Si oxide and (h and including Y, Sc, La, Ce, Gd, Eu, Dy and the like thereof, or a fluoride of one of these metals, yttrium, or - a mixture of garnet (YAG) 25 plasma resistant material - aluminum.
5. 如权利要求1-4中任一项的处理设备,其中填料是选自铝硅酸镧(LAS )、铝硅酸镁(MAS )、铝硅酸钾(CAS )、铝硅酸钇(YAS )和其混合物的组的玻璃-陶瓷组分。 5. The processing apparatus according to any one of claims 1-4, wherein the filler is selected from lanthanum aluminosilicate (LAS), aluminum silicate (the MAS), potassium aluminum silicate (CAS), yttrium aluminum silicate ( YAS glass group) and mixtures thereof - ceramic component.
6. 如权利要求1-5中任一项的处理设备,其中填料组成包括铝硅酸30钇(YAS )和选自氧化铝、氧化镁、氧化钙和氧化锌的组的金属氧化物粉末的混合物。 6. The processing apparatus according to any one of claims 1-5, wherein the filler comprises aluminum silicate, yttrium 30 (YAS) and is selected from alumina, metal oxides of the group magnesium oxide, calcium oxide and zinc oxide powder mixture.
7.如权利要求1-6中任一项的处理设备,其中填料包括铝硅酸钇(YAS)和胶体氧化硅、胶体氧化铝、胶体氧化钇、胶体氧化锆和其混合物的至少一种的混合物。 7. at least one processing apparatus according to any one of claims 1-6, wherein the filler comprises aluminum silicate, yttrium (YAS) and colloidal silica, colloidal alumina, colloidal yttria, colloidal zirconia and mixtures of mixture. 5 5
8.如权利要求l-7中任一项的处理设备,其中填料包括50到80 wt. %的玻璃组成,该玻璃组成包括25-55 wt.y。 8. The processing apparatus l-7 in any one of claims, wherein the filler comprises from 50 to 80 wt.% Of the glass composition, the glass composition comprising 25-55 wt.y. 的Y20" 13到35wt. %的ALCh 和25到55wt. °/。的Si02;和具有20-25wt. AH < 1 wt. %的硝酸和75-79 wt. °/。蒸馏水组成的20到50wt. %的胶体氧化铝。 ... The Y20 "13 to 35wt% of ALCh and 25 to 55wt ° / of Si02; having 20-25wt AH <1 wt% nitric acid and 75-79 wt ° / distilled water of 20 to 50 wt.... .% colloidal alumina.
9. 如权利要求l-8中任一项的处理设备,其中密封该间隙的填料具10有电极CTE的0. 75到1.25倍范围的CTE。 9. The processing apparatus according to any one of claims l-8, wherein the gap is sealed with a packing 10 having a CTE 0. 75 by the factor 1.25 in the range of CTE electrode.
10. 如权利要求1-9中任一项的处理设备,其中基底基板包括选自石墨、难熔金属、过渡金属、稀土金属和其合金的组的导电材料,和其中。 10. The processing apparatus according to any one of claims 1-9, wherein the substrate comprises a substrate selected from graphite, refractory metals, transition metals of electrically conductive materials, rare earth metals and alloys thereof, and wherein.
11. 如权利要求1-10中任一项的处理设备,进一步包括设置在基底15 基板上的至少电绝缘涂层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物构成的组的元素的氮化物、碳化物、氮碳化物中的至少一种,其中该电极是薄膜电极,并且其中该薄膜电极通过膨胀热等离子体(ETP)、化学汽相沉积(CVD)、等离子体增强化学汽相沉积、离子等离子体沉积、金属有机化学汽相沉积、金属有机化学相20外延、溅射、电子束和等离子体喷涂中的至少一种设置在电绝缘涂层上。 11. The processing apparatus according to any one of claims 1 to 10, further comprising at least an electrically insulating coating disposed on the base substrate 15, the coating selected from the group comprising B, Al, Si, Ga, Y, refractory hard nitride of an element of group metals, transition metals and combinations thereof configured, carbides, carbonitrides of at least one, wherein the electrode is a film electrode, and wherein the thin film electrode by expanding thermal plasma (ETP), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition, ion plasma deposition, metal organic chemical vapor deposition, metal organic 20 phase epitaxy, sputtering, electron beam and plasma spraying at least one set on the electrically insulating coating.
12. 如权利要求1-9中任一项的处理设备,其中J^底基板是选自由B、 Al、 Si、 Ga、 Y组成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物;具有NaZn(P(W 3的NZP结构的高热稳定性磷酸锆;难熔硬金属;过渡金属;铝的氧化物、氮氧化物和其组合物的组的电绝缘材25 料,其中电极嵌入在基底基板中。 Oxide of an element of group 12. The processing apparatus according to any one of claims 1-9, wherein J ^ is selected from the group consisting of the base substrate B, Al, Si, Ga, Y consisting of a nitride, carbide, carbonitride or oxynitride; having NaZn (P (W high thermal stability of the zirconium phosphate of the NZP structure 3; refractory hard metal; a transition metal; an electrically insulating material set oxides, nitrogen oxides, and combinations thereof 25 aluminum material, wherein the electrode is embedded in the base substrate.
13. 如权利要求1-9中任一项的处理设备,其中至少一个电极是电阻加热电极或静电卡盘。 13. The processing apparatus of any one of claims 1-9, wherein the at least one electrode is a resistive heating electrode or an electrostatic chuck.
14. 一种用于半导体处理室中的晶片处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数 14. A wafer processing apparatus for semiconductor processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the base substrate having a coefficient of thermal expansion
15. 嵌入或设置在基底基板下面的至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0. 75到1.25倍范围的热膨胀系数(CTE );设置在基底基板上的至少涂层,该涂层包括选自由B、 Al、 Si、 Ga、 5 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮碳化物、氮氧化物中的至少一种。 15. The embedded or at least one electrode disposed below the base substrate, the resistance heating electrodes selected from the electrodes, the plasma generating electrode, the electrostatic chuck electrode and the electron beam is an electrode having a range of 0.75 to 1.25 times the CTE of the base substrate coefficient of thermal expansion (the CTE of); at least a coating disposed on the base substrate, the coating comprising an element selected from the group consisting of B, Al, Si, Ga, 5 Y, refractory hard metals, transition metals, and its composition nitrides, carbides, carbonitrides, at least one of nitrogen oxide. 选自电线、突出物、插入物和通孔的组的至少功能构件,其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙;和用于密封晶片处理设备中的间隙的填料,其中当将设备暴露到10 25-600。 Selected wires, projections, at least the insert member and the functional group of the through holes, wherein the functional member at least at a distance from its penetration through the wafer processing apparatus, a gap is generated; and the gap sealing wafer processing apparatus for fillers, wherein when the device is exposed to 1025-600. C温度范围的工作环境时,填料具有小于1000埃每分钟(A/min) 的蚀刻率,该环境选自包括囟素的环境、等离子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和操作中的一种。 When C temperature range working environment, the filler having an etching rate of less than 1000 Angstroms per minute (A / min), which comprises a halogen selected from the environmental surroundings, a plasma etching environment, reactive ion etching environment, and the plasma cleaning environment environmental and one gas purge operation. 15. —种用于半导体处理室中的晶片处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数15 (CTE),该基底基板包括选自由B、 Al、 Si、 Ga、 Y组成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物;具有NaZr"P(Kh的NZP 结构的高热稳定性磷酸锆;难熔硬金属;过渡金属;铝的氧化物、氮氧化物和其组合物的组的电绝缘材料。嵌入或设置在基底基板下面的至少一个电极,该电极选自电阻加热20 电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0. 75到1.25倍范围的热膨胀系数(CTE );设置在基底基板上的至少涂层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮^碳化物、氮氧化物中的至少一种; 25 选自电线、突出物、插入物和通 15. - kind of a wafer processing apparatus for semiconductor processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the substrate having a coefficient of thermal expansion of the substrate 15 (CTE), which comprises a base substrate selected from the group consisting of B, Al , oxides, nitrides, carbides, carbonitrides, or oxides of nitrogen element group consisting of Si, Ga, Y; with NaZr "P (high thermal stability of the zirconium phosphate of the NZP structure Kh; refractory hard metal; a transition metal; an electrical insulating material of the group of aluminum oxides, nitrogen oxides, and combinations thereof, or embedded in the at least one electrode disposed below the base substrate, the resistance heating electrodes selected from electrodes 20, the plasma generating electrode, electrostatic chucks and an electron beam pad electrode an electrode substrate having a coefficient of thermal expansion CTE of the substrate from 0.75 to 1.25 times the range (CTE); at least a coating disposed on the base substrate, the coating selected from the group comprising B, Al, Si, nitride of an element of the group ga, Y, refractory hard metals, transition metals and combinations thereof, carbide, nitrogen carbide ^, at least one nitrogen oxide; wire 25 is selected, the protrusions, the insert and through 孔的组的至少功能构件,其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙; 和用于密封晶片处理设备中的间隙的填料,其中填料包括选自如下组的组成物:具有NaZn (P(W 3的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一30 种元素的玻璃-陶瓷组成物;BaO-AhO广B203-Si(h玻璃;和Si02和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗等离子体材料的混合物;当将设备暴露到25-600。C温度范围的工作环境时,填料具有小于1000埃每分钟(A/min)的蚀刻率,该环境选自包括卣素的环境、等离5子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和操作中的一种,且其中该功能构件是电导线,并且该间隙是通过用于将电极连接到外部电源的导线建立的。 At least a functional member of the group of apertures, wherein the functional member at least at a distance from its penetration through the wafer processing apparatus, a gap is generated; and a packing for sealing a gap in the wafer processing apparatus, wherein the filler comprises a composition selected from the group of was: having NaZn (P (high thermal stability of the zirconium phosphate W NZP structure 3; and at least one glass comprises 30 elements selected from the group consisting of group 2a, 3a and 4a constituting the group from the group - ceramic composition; BaO-AhO wide B203-Si (h glass; and Si02 and include Y, Sc, La, Ce, Gd, Eu, Dy and the like oxides, fluorides, or one of these metals, or yttrium - aluminum - garnet (YAG) of the mixture plasma resistant material; when the device is exposed to the working environment temperature range 25-600.C filler having an etching rate per minute (a / min) is less than 1000 angstroms, the ambient environment selected from the group comprising pigment wine container, 5 sub plasma etch environment, reactive ion etching environment, the environment and the plasma cleaning gas and cleaning operations in an environment, and wherein the functional component is an electrical conductor and the electrode gap is connected to the outside through a power leads established.
16. —种用于处理室中的晶片处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数10 (CTE),至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0. 75到1. 25倍范围的热膨胀系数(CTE);选自电线、连接体突出物、插入物和通孔的组的至少功能构件; 15 用于将电极连接到外部电源的连接体;其中电极和连接体中至少之一的一部分涂布有导电抗蚀刻材料,形成具有符合基底基板CTE的足够展延性质的具有0. 000004至0. OIO之间厚度的涂层,以便涂层保持至少90%的裂缝是空的,和其中该处理设备用于至少60(TC温度下的工作环境,该环境是包括20 卣素的环境、等离子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和操作中的一种。 16. - seed processing apparatus for wafer processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the substrate having a coefficient of thermal expansion of the substrate 10 (CTE), at least one electrode, which is selected from the resistance heating electrode, the plasma generating electrode, the electrostatic chuck electrode and the electron beam an electrode base substrate having a coefficient of thermal expansion CTE of 0.75 to 1.25 times the range (CTE); selected wire connector projection, the insert set of vias and at least a functional component; a base substrate having a CTE compliance sufficient coating wherein a portion of at least one of the electrodes and the connector has a conductive anti-etching material is formed; connector 15 for connecting the electrodes to an external power source ductility properties having a coating thickness of between 0.000004 to 0. OIO, so that at least 90% of the coating remains crack is empty, and wherein at least the processing device 60 for the working environment (at a temperature TC, the environmental factors include environmental wine container 20, the plasma etching environment, reactive ion etching environment, the environment and the plasma cleaning gas and cleaning operations in an environment.
17. 如权利要求16的处理设备,其中暴露到工作环境的连接体的一部分涂布有选自镍、铬和其合金的组的导电抗蚀刻材料,具有>5°/»延长的展延性。 17. The processing device as claimed in claim 16, wherein the coated portion of the connector is exposed to the working environment are selected from nickel, chromium and conductive alloys of the group of the anti-etching material having> 5 ° / »extended ductility.
18.如权利要求16-17中任一项的处理设备,其中连接体是杆,且其中连接杆通过辐射式螺母或具有锥形头的螺母中之一贴附到晶片处理设备,并且该螺母涂布有选自镍、铬和其合金的组的导电抗蚀刻材料, 具有〉5%延长的展延性。 18. The processing apparatus of any one of the 16-17 nut claim, wherein the linker is a rod, wherein the connecting rods and nuts or by irradiation, one of the nut has a conical head is attached to a wafer processing apparatus, and coated with a conductive anti-etching material is selected from nickel, chromium and alloys thereof groups having> 5% extended ductility.
19.如权利要求18的处理设备,其中该螺母进一步覆盖有选自如下组的填料组成,该组是:具有NaZn(P(W3的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶乾组成物;BaO-Al203-B20广Si02玻璃;和Si(h和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或这些金属中之一的氟化物、或钇-铝-石榴石(YAG )的抗等离子体材料的混合物。 19. The processing device as claimed in claim 18, wherein the nut is further covered with a filler selected from the group consisting of the group is: having a NaZn (high thermal stability of the zirconium phosphate P NZP structure (W3; the group comprising selected from the group consisting of 2a, glass at least one element of group 3a and 4a of the group consisting of - dry ceramic composition; BaO-Al203-B20 Si02 wide glass; and Si (h and including Y, Sc, La, Ce, Gd, Eu, Dy, etc. oxide, or fluoride of one of these metals, yttrium, or - a mixture of garnet (YAG) a plasma resistant material - aluminum.
20.如权利要求16-19中任一项的处理设备,其中用于将电极贴附到晶片处理设备的连接体是辐射式螺母或具有锥形头的螺母中之一的连接体,并且该螺母涂布有选自镍、铬和其合金的组的导电抗蚀刻材料, 具有> 5%延长的展延性。 20. The processing apparatus of any one of claims 16-19, wherein the means for attaching the electrodes to the wafer processing apparatus connected to the linker or one of Radiation nut nut having a tapered head and the nut coated with a conductive anti-etching material is selected from the group of nickel, chromium and alloys thereof, having a> 5% extended ductility.
21,如权利要求16-20中任一项的处理设备,其中该连接体进一步覆盖有选自如下组的填料组成,该组是:具有NaZn(P(Kh的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶瓷組成物;BaO-Al203-B203-Si(h玻璃;和Si02和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗等离子体材料的混合物。 21. The processing apparatus according to any one of claims 16-20, wherein the linker further covered with a filler selected from the group consisting of the group is: a NaZn (P (high thermal stability of the zirconium phosphate of the NZP structure Kh ; glass least one element selected from the group comprising group 2a, 3a and 4a group consisting of - the ceramic composition; BaO-Al203-B203-Si (h glass; and Si02 and include Y, Sc, La, Ce, gd, Eu, Dy and the like oxides, fluorides, or one of these metals, yttrium, or - a mixture of garnet (YAG) a plasma resistant material - aluminum.
22.如权利要求16-21中任一项的处理设备,其中至少功能构件自其以一间隔穿透晶片处理设备,产生了间隙,且其中该间隙由涂布有选自镍、铬和其合金的组的导电腐蚀刻材料密封,具有>5%延长的展延性。 22. The processing apparatus of any one of claims 16-21, wherein the at least one functional member which is spaced from the wafer processing apparatus penetrate, a gap is produced, and wherein the gap formed by coating selected from nickel, chromium and their etching the conductive material group carved seal alloy, having a> 5% extended ductility.
23. 如权利要求16-22中任一项的处理设备,其中连接体是螺母、螺栓、铆钉、杆、垫圏、弹簧或管道,用于将电极贴附到该设备,并且其中在扣件和该设备之间至少存在裂隙;其中至少一个裂隙填充有选自如下组的组成物,该组是:具有NaZr2 (P(W 3的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶瓷组成物;Ba0-Al203-B203-Si02玻璃; 和Si02和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或25 这些金属中之一的氟化物、或钇-铝-石榴石(YAG)的抗等离子体材料的混合物。 23. The processing apparatus of any one of claims 16-22, wherein the linker is a nut, bolts, rivets, rods, rings of the pad, a spring, or conduit for attaching the electrodes to the device, and wherein the fastener and the presence of cracks between at least the apparatus; wherein the at least one fracture is filled with a composition selected from the group, the group is: a NaZr2 (P (high thermal stability of the zirconium phosphate W NZP structure 3; selected from the group consisting of group 2a comprises, glass at least one element from the group of group 3a and 4a made of - the ceramic composition; Ba0-Al203-B203-Si02 glass; and Si02 and include Y, Sc, La, Ce, Gd, Eu, Dy oxide such or, 25, or yttrium fluoride of one of these metals - mixtures garnet (YAG) a plasma resistant material - aluminum.
24. 如权利要求16-23中任一项的处理设备,其中该设备进一步涂布有包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮碳化物、氮氧化物中至少一种的涂层, 且其中电极包括选自铪、锆、铈和其混合物的碳化物和氧化物的組的材料。 24. The processing apparatus according to any one of claims 16-23, wherein the apparatus further comprises a coating with a group selected from the group consisting of B, Al, Si, Ga, Y, refractory hard metals, transition metals, and its composition nitrides of elements, carbides, carbonitrides, oxynitrides of at least one coating layer, and wherein the electrode comprises a material selected from the group of oxides and carbides of hafnium, zirconium, cerium, and mixtures thereof.
25.如权利要求16-24中任一项的处理设备,其中基底基板包括选自石墨、难熔金属、过渡金属、稀土金属和其合金的组的导电材料,且其中。 25. The processing apparatus according to any one of claims 16-24, wherein the substrate comprises a substrate selected from graphite, refractory metals, transition metals of electrically conductive materials, rare earth metals and alloys thereof, and wherein.
26.如权利要求16-25中任一项的处理设备,进一步包括设置在基底基板上的至少电绝缘涂层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮碳化物、氮氧化物中的至少一种。 26. The processing apparatus according to any one of claims 16-25, further comprising at least an electrically insulating coating disposed on the base substrate, the coating selected from the group comprising B, Al, Si, Ga, Y, refractory hard metals , nitride of an element of the group of transition metals and combinations thereof, carbides, carbonitrides, at least one of nitrogen oxide.
27. 如权利要求16-24中任一项的处理设备,其中基底基板是选自10 由B、 Al、 Si、 Ga、 Y构成的组的元素的氧化物、氮化物、碳化物、氮碳化物或氮氧化物;具有NaZn(P(Kh的NZP结构的高热稳定性磷酸锆;难熔硬金属;过渡金属;铝的氧化物、氮氧化物、和其组合物的组的电绝缘材料。 27. The processing apparatus of any one of 16-24 nitride, carbide, carbonitride, wherein the base substrate is an oxide of an element selected from the group 10 of B, Al, Si, Ga, Y configuration, or oxynitride; having NaZn (P (high thermal stability of the zirconium phosphate of the NZP structure Kh; refractory hard metal; a transition metal; group of electrically insulating material oxides, nitrogen oxides, and combinations thereof of aluminum.
28. —种用于半导体处理室中的晶片处理设备,该设备包括:15 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数(CTE ),嵌入或设置在基底基板下面的至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0. 75到1.25倍范围的热膨胀系数(CTE ); 20 至少设置在基底基板上的涂层,该涂层包括选自由B、 Al、 Si、 Ga、Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮碳化物、氮氧化物中的至少一种。 28. - kind of a wafer processing apparatus for semiconductor processing chamber, the apparatus comprising: a base substrate 15, for placing the wafer thereon, the base substrate having a coefficient of thermal expansion (the CTE of), embedded in or disposed below the base substrate at least an electrode which is selected from the resistance heating electrodes, the plasma generating electrode, the electrostatic chuck electrode and the electron beam is an electrode having a thermal expansion coefficient range of 0.75 to 1.25 times the CTE of the base substrate (CTE); 20 is disposed at least coating on the base substrate, the coating selected from the group comprising B, Al, Si, Ga, Y, refractory nitrides of elements from the group of hard metals, transition metals and combinations thereof, carbide, nitrogen carbide, nitrogen at least one oxide. 选自电线、连接体突出物、插入物和通孔的组的至少功能构件,其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙; 25 用于将电极连接到外部电源的连接体;其中电极和连接体中至少之一的一部分涂布有导电抗蚀刻材料,形成具有符合基底基板CTE的足够展延性质的具有0. 000004至0. 010英寸厚度的涂层,以便涂层保持至少9oy。 Selected wire connector protrusion, the at least functional group of the insert member and the through-hole, wherein the at least one functional member which is spaced from penetrating through the wafer processing apparatus, a gap is generated; 25 for connecting the electrode to an external power source connecting body; wherein a portion of the at least one electrode and the coated body is connected with the conductive etch-resistant material having a coating formed from 0.000004 to 0.010 inches thickness having sufficient ductility properties meet the CTE of the base substrate, so that holding the coating at least 9oy. 的裂缝是空的,和其中该处理设备用于至少600。 The fracture is empty, and wherein the processing device for at least 600. C温度下的工作环境,该环境是包括30卣素的环境、等离子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和搡作中的一种。 C temperature environment at work, the ambient environment is a prime wine container 30, a plasma etching environment, reactive ion etching environment, the environment and the plasma cleaning gas for cleaning an environment in and shoving.
29. —种用于半导体处理室中的晶片处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数(CTE),该基底基板包括选自由B、 Al、 Si、 Ga、 Y构成的组的元素的氧5 化物、氮化物、碳化物、氮碳化物或氮氧化物;具有NaZn (P(W 3的NZP 结构的高热稳定性磷酸锆;难熔硬金属;过渡金属;铝的氧化物、氮氧化物、和其组合物的组的电绝缘材料;嵌入或设置在基底基板下面的至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基10底基板CTE的0. 75到1.25倍范围的热膨胀系数(CTE );至少设置在基底基板上的涂层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮碳化物、氮氧化物中的至少一种;选自电线、连接体、突出物、插 29. - kind of a wafer processing apparatus for semiconductor processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the base substrate having a coefficient of thermal expansion (the CTE of), which comprises a base substrate selected from the group consisting of B, Al, si, Ga, 5 oxide compound of elements from the group consisting of Y, nitrides, carbides, oxides of nitrogen, carbon or nitrogen; having NaZn (P (high thermal stability of the zirconium phosphate W NZP structure 3; refractory hard metal ; transition metal; group of electrically insulating material oxides, nitrogen oxides, and combinations thereof aluminum; embedded or at least one electrode disposed below the base substrate, the resistance heating electrodes selected from the electrodes, the plasma generating electrode, an electrostatic the chuck electrode and the electron beam an electrode group 10 having a base substrate coefficient of thermal expansion CTE of 0.75 to 1.25 times the range (CTE); at least a coating disposed on a base substrate, the coating selected from the group comprising B, Al , Si, Ga, Y, refractory nitride of at least one element from the group of hard metals, transition metals and combinations thereof, carbide, nitrogen carbide, oxynitride; is selected from wire, linker, projection was inserted 物和通孔的组的至少功能构件, 15其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙; 和用于密封由穿透晶片处理设备的导线产生的间隙的填料。 At least functional group of members thereof and the through hole, which penetrates through a wafer processing apparatus at intervals, wherein a gap is generated at least 15 members from the function; and a filler for sealing a gap created by the penetrating conductor wafer processing apparatus.
30. —种用于半导体处理室中的晶片处理设备,该设备包括: 基底基板,用于在其上放置晶片,该基底基板具有热膨胀系数(CTE ),20 嵌入或设置在基底基板下面的至少一个电极,该电极选自电阻加热电极、等离子体产生电极、静电卡盘电极和电子束电极,该电极具有基底基板CTE的0. 75到1.25倍范围的热膨胀系数(CTE );至少设置在基底基板上的涂层,该涂层包括选自由B、 Al、 Si、 Ga、 Y、难熔硬金属、过渡金属和其组合物的组的元素的氮化物、碳化物、氮25碳化物、氮氧化物中的至少一种;选自电线、连接体、突出物、插入物和通孔的组的至少功能构件, 其中至少功能构件自其以一间隔穿透过晶片处理设备,产生了间隙; 用于密封晶片处理设备中的间隙的填料, 用于将电极贴附到外部电源的连接体; 30 其中该处理设备用于至少600。 30. - kind of a wafer processing apparatus for semiconductor processing chamber, the apparatus comprising: a base substrate, a wafer placed thereon, the base substrate having a coefficient of thermal expansion (CTE), 20 embedded in or disposed below the base substrate at least an electrode which is selected from the resistance heating electrodes, the plasma generating electrode, the electrostatic chuck electrode and the electron beam an electrode base substrate having a coefficient of thermal expansion CTE of 0.75 to 1.25 times the range (CTE); provided at least a substrate coating on a substrate, the coating selected from the group comprising B, Al, Si, Ga, Y, refractory nitrides of elements from the group of hard metals, transition metals and combinations thereof, carbide, nitrogen carbide 25, N at least one oxide; is selected from wire, linker, projection, and the insert member at least functional group of the through holes, wherein at least a functional component that penetrates through from the wafer processing apparatus at a distance, creating a gap; packing for sealing a gap in the wafer processing device for attaching electrodes to the external power source connector; wherein the processing device 30 for at least 600. C温度下的工作环境,该环境是包括卤素的环境、等离子体蚀刻环境、反应性离子蚀刻环境、等离子体清洗环境和气体清洗环境和操作中的一种;其中电极和连接体中至少之一的一部分涂布有导电抗蚀刻材料,形成具有0. 000004英寸至O. 010英寸厚度并具有符合基底基板CTE的足够5展延性质的涂层,以便涂层保持至少90%的裂缝是空的,和其中填料包括选自如下组的组成物:具有NaZr2(PO》3的NZP结构的高热稳定性磷酸锆;包含选自由2a族、3a族和4a族构成的组的至少一种元素的玻璃-陶瓷组成物;BaO-Al203-B20广Si02玻璃;和Si(h和包括Y、 Sc、 La、 Ce、 Gd、 Eu、 Dy等的氧化物、或这些金属中之一的氟化物、或10 4乙-铝-石榴石(YAG)的抗等离子体材料的混合物;以及其中当暴露到工作环境时,填料具有小于1000埃每分钟(A/min)的独刻率。 C temperature environment at work, the ambient environment is a halogen, a plasma etching environment, reactive ion etching environment, the environment and the plasma cleaning gas purge and a method of operating environment; wherein at least one of the electrodes and the connecting body a portion coated with a conductive anti-etching material, to form a coating having a 0.000004 inches to O. 010 5 inch thick and have sufficient ductility properties meet the CTE of the base substrate, so that the coating retains at least 90% of the cracks is empty and wherein the filler comprises a composition selected from the group consisting of: a NaZr2 (PO "NZP structure with high thermal stability of the zirconium phosphate 3; the glass of at least one element selected from the group comprising group 2a, 3a and 4a group consisting of - ceramic composition; BaO-Al203-B20 Si02 wide glass; and Si (h and oxides including Y, Sc, La, Ce, Gd, Eu, Dy and the like, or a fluoride of one of these metals, or 10 4 b - a mixture of garnet (YAG) a plasma resistant material - aluminum; and wherein when exposed to the working environment, a filler having a unique moment of less than 1000 angstroms per minute (a / min) is.
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CN106796910B (en) * 2014-09-16 2019-11-12 日本碍子株式会社 The preparation method of ceramic structure, base plate keeping device component and ceramic structure
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