CN106653977B - A kind of flip chip packaging structure and forming method - Google Patents
A kind of flip chip packaging structure and forming method Download PDFInfo
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- CN106653977B CN106653977B CN201710101738.0A CN201710101738A CN106653977B CN 106653977 B CN106653977 B CN 106653977B CN 201710101738 A CN201710101738 A CN 201710101738A CN 106653977 B CN106653977 B CN 106653977B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000000084 colloidal system Substances 0.000 claims abstract description 14
- 238000012856 packing Methods 0.000 claims abstract description 14
- 238000005476 soldering Methods 0.000 claims abstract description 13
- 239000007769 metal material Substances 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 33
- 239000006071 cream Substances 0.000 claims description 28
- 239000011810 insulating material Substances 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- 230000003139 buffering effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 235000008429 bread Nutrition 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 7
- 239000004033 plastic Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention relates to a kind of flip chip packaging structure and forming methods, a kind of flip chip packaging structure, including rack body, flip-chip and packing colloid, the buffer layer of corresponding metal electrode quantity is additionally provided in the bowl of rack body, the buffer layer is made of metal material, it is split and electrically isolates by the river that insulate between the buffer layer, the upper surface of the buffer layer is provided with the first solderable metal layers to be correspondingly connected with the electrode of flip-chip, the lower surface of the buffer layer is equipped with the second bondable metal layer to be correspondingly connected with the metal electrode on rack body, the flip chip packaging structure between flip-chip and package support by way of being inserted into buffer layer, solve the problems, such as flip-chip in Reflow Soldering because expansion coefficient difference greatly caused by welding quality it is bad.
Description
Technical field
The present invention relates to a kind of encapsulating structure of flip-chip and forming methods.
Background technology
For flip-chip compared with positive cartridge chip, it has preferable heat sinking function, has low-voltage, high brightness, highly reliable
The advantages that property, high saturation current density, therefore flip-chip has a wide range of applications on high power LED device.
It is often in holder crystal bonding area point tin cream, then by flip-chip for existing patch type flip LED encapsulating structure
It is placed on tin cream, chip electrode is corresponding with tin cream, by Reflow Soldering, realizes die bond.But due to metallic support and plastic rubber material
The coefficient of expansion it is different, when crossing Reflow Soldering die bond, metallic support can have the case where bending so that metallic support becomes
Out-of-flatness is obtained, therefore tin cream can not be evenly distributed between chip electrode and metallic support so that chip electrode and metal branch
There can be cavity between frame, or even there are problems that being not welded to and there is rosin joint together, this directly affects the heat dissipation of chip
And stability.In order to solve this problem, it is thus proposed that increase the amount of tin cream, but due to exhausted between two electrodes of holder
Edge layer spacing is smaller, and the gap between two electrodes of flip-chip is also smaller, can have point in two, holder
Tin cream on electrode links together across insulating layer, causes short circuit.
Invention content
The present invention is intended to provide a kind of flip chip packaging structure and forming method, the flip chip packaging structure by
The mode of buffer layer is inserted between flip-chip and package support, to solve existing flip-chip in Reflow Soldering because of the coefficient of expansion
The problem that difference causes greatly welding quality bad.
Concrete scheme is as follows：
A kind of flip chip packaging structure, including rack body, flip-chip and packing colloid, the rack body packet
At least two metal electrodes and insulating materials are included, the flip-chip is fixed in the bowl of rack body, the packaging plastic
Body is coated on flip-chip, and the buffer layer of corresponding metal electrode quantity is additionally provided in the bowl of the rack body, described slow
It rushes layer to be made of metal material, is split and electrically isolates by the river that insulate between the buffer layer, the buffer layer
Upper surface be provided with the first solderable metal layers to be correspondingly connected with the electrode of flip-chip, the lower surface of the buffer layer is equipped with
Second bondable metal layer is to be correspondingly connected with the metal electrode on rack body.
Preferably, the metal electrode of the rack body is equipped with third bondable metal layer with the face that buffer layer mutually welds,
It is directly welded and fixed by the second bondable metal layer and third bondable metal layer between the buffer layer and metal electrode.
Preferably, second bondable metal layer and third bondable metal layer are tin or tin alloy.
Preferably, the thickness of second bondable metal layer is 100-200um, and the thickness of the third bondable metal layer is
150-250um。
Preferably, the upper surface of the buffer layer includes pad area and echo area, and the pad area is located at pair of buffer layer
The position of flip-chip should be fixed, the echo area is located at other positions, and the echo area is equipped with reflecting layer.
Preferably, insulating materials is filled in the insulation river, the insulating materials is organic silica gel insulating materials.
Preferably, the top surface of the insulating materials is more than the upper surface 20-30um of buffer layer.
Preferably, the width in the insulation river is 180-220um.
The present invention also provides a kind of forming methods of flip chip packaging structure, it is characterised in that：Include the following steps：
S1, above-mentioned buffer layer is put into the bowl of rack body, and make each buffer layer respectively with rack body
Each metal electrode it is corresponding, make its will not short circuit；
S2, tin cream is put on the positive and negative electrode of buffer layer；
S3, flip-chip is placed on the buffer layer, and the electrode of flip-chip is corresponding with buffer layer respectively；
S4, Reflow Soldering is crossed so that flip-chip is welded on the buffer layer by tin cream, and buffer layer is welded on rack body
On metal electrode；
S5, point packing colloid；
S6, baking, make packing colloid cure.
Preferably, the thickness of put tin cream is 40-200um in the step S2.
Compared with existing flip chip packaging structure, a kind of flip chip packaging structure provided by the invention and its at
Type method has the advantages that：
1, a kind of flip chip packaging structure provided by the invention flip-chip electrode and holder metal electrode it
Between be inserted into buffer layer, flip-chip welds on the buffer layer, and buffer layer is welded on the metal electrode of holder again, it is possible to reduce falls
Cartridge chip and holder in Reflow Soldering because between the metal electrode of holder and plastic rubber material expansion coefficient difference greatly caused by welding quality
Bad problem.
2, the metal electrode of the lower surface and holder of the buffer layer of a kind of flip chip packaging structure provided by the invention
Upper surface is designed with tin layers, and two kinds are welded directly together by tin layers, can be substantially without putting tin cream therebetween
Degree reduces the cavity of weld so that welds even closer, raising welding quality and heat dissipation effect between the two.
3, the insulating materials filled in a kind of insulation river of the buffer layer of flip chip packaging structure provided by the invention
Top surface be more than buffer layer upper surface, insulating materials use soft organic silica gel insulating materials, in buffer layer in Reflow Soldering
When expanding, due to the characteristic of organic silica gel softness, still ensure that the smooth of buffer layer, and due to the blocking of insulating materials,
Tin cream on positive and negative electrode will not connect together, it is ensured that the welding quality between buffer layer of flip-chip.
4, a kind of upper surface of the buffer layer of flip chip packaging structure provided by the invention includes pad area and echo area,
Echo area uses minute surface silvering, can improve the light extraction efficiency of flip-chip, improve the light efficiency of the encapsulating structure.
5, buffer layer is first put by a kind of forming method of flip chip packaging structure provided by the invention, the forming method
Into the bowl of rack body, then tin cream is put on the buffer layer, place flip-chip, Reflow Soldering is then crossed, directly by upside-down mounting core
Piece is welded on the buffer layer by tin cream, and buffer layer is welded on the metal electrode of rack body, finally carries out dispensing and drying
Step, entire forming process is simple and convenient, and yields is high.
Description of the drawings
Fig. 1 shows the schematic diagram of flip chip packaging structure.
Fig. 2 shows the structural schematic diagrams of buffer layer in embodiment 1.
Fig. 3 shows the schematic diagram of the metal electrode of rack body in embodiment 2.
Fig. 4 shows the vertical view of buffer layer in embodiment 3.
Fig. 5 shows the structural schematic diagram of buffer layer in embodiment 4.
Specific implementation mode
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be coordinated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
In conjunction with the drawings and specific embodiments, the present invention is further described.
Embodiment 1
As described in Figure 1, the present invention provides a kind of flip chip packaging structure, which includes rack body 1,
Cartridge chip 2 and packing colloid 3, wherein rack body include at least two metal electrodes 12 and plastic rubber material 10, and plastic rubber material 10 will
Metal electrode 12 is fixed and forms bowl shape, and the middle part of metal electrode 12 is also separated by plastic rubber material, makes each metal electrode 12
Between electrical isolation, the metal material that metal electrode 12 preferred thermal conductivity is high and resistance is small, such as copper, in metal electrode 12
Lower surface can also spray or be electroplated bondable metal layer, in order to which metal electrode 12 can be welded direct to PCB by solder
On plate.The size of metal electrode 12 is determined by the size of the positive and negative electrode 20 of flip-chip 2, when the positive negative electricity of flip-chip 2
When extremely left and right etc. is big, then the also big laying such as use of metal electrode 12；When the positive and negative electrode of flip-chip 2 is small one and large one,
Then metal electrode 12 also uses small one and large one laying.Equally plating is equipped with solderable on the welding surface of the positive and negative electrode 20 of flip-chip 2
Metal layer, such as gold-tin alloy so that flip-chip can be welded by eutectic or tin cream is welded on holder.Packing colloid 3
Light-emitting surface coated in flip-chip and its surrounding, the organic silica gel of the preferred high refractive index of packing colloid, or be mixed with glimmering
The organic silica gel of light powder, can also be in the molding directly on a surface of packing colloid（Molding）Lens, to improve the encapsulating structure
Light extraction efficiency.
In this example by the bowl of rack body 1 only there are one illustrating for flip-chip, with reference to figure 1 and Fig. 2,
In rack body 1, buffer layer 4 is additionally provided between the metal electrode 12 of flip-chip 2 and rack body 1, buffer layer 4 is by conduction
Metal material be made, preferably there is high heat conductance and low-resistance metal material, such as copper.The middle part of buffer layer 4 is equipped with exhausted
Buffer layer is divided into positive and negative two electrodes 42 by edge river 40, insulation river 40, and is made electrical between positive and negative two electrodes 42
Isolation is equipped with the first bondable metal layer 44 in the upper surface of buffer layer 4, and lower surface is equipped with the second bondable metal layer 46, and first can
It welds metal layer 44 to be used to weld with 20 phase of positive and negative electrode of flip-chip 2, the second bondable metal layer 46 is used for and rack body
12 phase of metal electrode is welded, therefore 12 phase of metal electrode of the size and rack body 1 of two electrodes 42 that buffer layer 4 is divided into
It is same also to determine that details are not described herein by the size of the electrode 20 of flip-chip 2.Two metals of insulation 40 rack body 1 of river
It is on insulating layer 10 between electrode 12 and parallel with it, so that buffer layer 4 is welded together with the metal electrode 12 on rack body 1
After will not short circuit.
With reference to figure 2 buffering is welded in flip-chip wherein insulation river 40 is the groove for being laid in 4 middle part of buffer layer
When on layer 4, due to the presence of central slot, the buffer layer 4 of the right and left has the space of extension, buffer layer 4 after expanded by heating
It remains able to smooth, will not cause tin cream that can not be evenly distributed between chip electrode and buffer layer because of the tilting of buffer layer 4,
Allow chip electrode very well on being welded on buffer layer 4, and the voidage between chip electrode and buffer layer is low.
Embodiment 2
With reference to figure 1 and Fig. 3, the present embodiment is roughly the same with the structure in embodiment 1, and difference is, rack body
The face that metal electrode 12 and 4 phase of buffer layer are welded is equipped with third bondable metal layer 14, the buffer layer 4 and metal electrode 12 it
Between be directly welded and fixed by the second bondable metal layer 46 and third bondable metal layer 14.Second bondable metal layer 46 and third can
Weldering metal layer 14 can be formed by the way of spraying or plating, the mode preferably sprayed.Second bondable metal layer, 46 He
14 preferred tin of third bondable metal layer or tin alloy, it is further preferred that the thickness of the second bondable metal layer 46 is 100-
The thickness of 200um, the third bondable metal layer 14 are 150-250um.
Since the second bondable metal layer 46 and third bondable metal layer 14 are by the way of being directly welded and fixed, should fall
Cored chip package, need not be between the second bondable metal layer 46 and third bondable metal layer 14 when being molded
Point tin cream, can also avoid buffer layer 4 and metal electrode caused by the out-of-flatness of tin cream at the step of can not only reducing tin cream
Poor contact between 12 and cause thermal resistance to become larger, influence its heat dissipation effect.
Embodiment 3
With reference to figure 1 and 4, the present embodiment is roughly the same with the structure in embodiment 1, and difference is, the buffer layer 4
Upper surface includes pad area 400 and echo area 410, and the pad area 400 is located at the middle part of buffer layer 4, and insulation river 40 will weld
Panel is divided into the region of two electrical isolations in left and right, and the echo area 410 is located at the side of pad area, is set on the echo area
There is reflecting layer.Wherein, the bondable metal layer on the pad area 400 selects the welding surface with the positive and negative electrode 20 of flip-chip 2
Upper plate sets the gold-tin alloy of material identical, and the reflecting layer on the echo area 410 is minute surface argentum reflecting layer, and echo area 410 can be with
Increase the light extraction efficiency of the flip chip packaging structure, improves light efficiency.
Embodiment 4
With reference to figure 1 and Fig. 5, the present embodiment is roughly the same with the structure in embodiment 1, and difference is, the insulation river
Insulating materials is filled in road 40, preferred insulative material is organic silica gel insulating materials, is welded on buffer layer 4 in flip-chip
When, the buffer layer 4 of the right and left squeezes after expanded by heating in insulation river, due to the flexible nature of organic silica gel,
It is remained able to when buffer layer 4 welds smooth, will not cause tin cream that can not be evenly distributed in core because of the tilting of buffer layer 4
Between plate electrode and buffer layer so that chip electrode can be very well on being welded on buffer layer 4, and chip electrode and buffer layer
Between voidage it is low.Further, the top surface of the insulating materials is more than the upper surface 20-30um of buffer layer 4.Therefore in tin
When cream, tin cream point is being welded in the both sides in insulation river 40 since insulation river 40 is higher than the upper surface of buffer layer 4
When connecing, the tin cream of insulation 40 both sides of river will not be connected in one piece.It is further preferred that the width in insulation river 40 is 180-
220um。
With reference to figure 1, the shape and size of the buffer layer 4 are identical or roughly the same as the bowl of rack body 1, slow
When rushing layer 4 and being placed into the bowl of rack body 1, buffer layer 4 can be positioned, and when welding, buffer layer 4 will not
Generate displacement.
All it is the holder by taking flip-chip there are one in the bowl of rack body as an example in above-described embodiment 1- embodiments 4
There is the principles of multiple flip-chips in the bowl of ontology and only there are one the principle of flip-chip is identical, difference is only in buffer layer
Quantity it is different, therefore repeat no more.
Embodiment 5
With reference to figure 1- Fig. 5, the present invention also provides a kind of forming method of flip chip packaging structure, the forming method packets
Include following steps：
S1, any buffer layer of embodiment 1- embodiments 4 is put into the bowl of rack body, and made each slow
It is corresponding with each metal electrode of rack body respectively to rush layer, makes it will not short circuit；
S2, tin cream is put on the positive and negative electrode of buffer layer；
S3, flip-chip is placed on the buffer layer, and the electrode of flip-chip is corresponding with buffer layer respectively；
S4, Reflow Soldering is crossed so that flip-chip is welded on the buffer layer by tin cream, and buffer layer is welded on rack body
On metal electrode；
S5, point packing colloid；
S6, baking, make packing colloid cure.
Wherein, in S2 steps put tin cream the preferred 40-200um of thickness.
The forming method of above-mentioned flip chip packaging structure is passed through primary using buffer layer, flip-chip, rack body
Reflow Soldering is molded fixed mode, and entire forming process is simple and convenient, and the voidage of weld is low, and welding quality is good, production
The yields of product is high.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
In vain, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (10)
1. a kind of flip chip packaging structure, including rack body, flip-chip and packing colloid, the rack body include
At least two metal electrodes and insulating materials, the flip-chip are fixed in the bowl of rack body, the packing colloid
Coated on flip-chip, it is characterised in that：The buffering of corresponding metal electrode quantity is additionally provided in the bowl of the rack body
Layer, the buffer layer are made of metal material, and are split and are electrically isolated by the river that insulate between the buffer layer, institute
The upper surface for stating buffer layer is provided with the first solderable metal layers to be correspondingly connected with the electrode of flip-chip, under the buffer layer
Surface is equipped with the second bondable metal layer to be correspondingly connected with the metal electrode on rack body, and the buffer layer, flip-chip, branch
Frame ontology is once welded and fixed by Reflow Soldering.
2. a kind of flip chip packaging structure according to claim 1, it is characterised in that：The metal electricity of the rack body
Pole is equipped with third bondable metal layer with the face that buffer layer mutually welds, solderable by second between the buffer layer and metal electrode
Metal layer and third bondable metal layer are directly welded and fixed.
3. a kind of flip chip packaging structure according to claim 2, it is characterised in that：Second bondable metal layer and
Third bondable metal layer is tin or tin alloy.
4. a kind of flip chip packaging structure according to claim 2, it is characterised in that：Second bondable metal layer
Thickness is 100-200 μm, and the thickness of the third bondable metal layer is 150-250 μm.
5. a kind of flip chip packaging structure according to claim 1, it is characterised in that：The upper table bread of the buffer layer
Pad area and echo area are included, the pad area is located at the position of the corresponding fixed flip-chip of buffer layer, and the echo area is located at
Other positions, the echo area are equipped with reflecting layer.
6. a kind of flip chip packaging structure according to claim 1, it is characterised in that：It is filled in the insulation river
Insulating materials, the insulating materials are organic silica gel insulating materials.
7. a kind of flip chip packaging structure according to claim 6, it is characterised in that：The top surface of the insulating materials is super
Cross 20-30 μm of the upper surface of buffer layer.
8. a kind of flip chip packaging structure according to claim 1, it is characterised in that：It is described insulation river width be
180-220μ m 。
9. a kind of forming method of flip chip packaging structure, it is characterised in that：Include the following steps：
S1, any buffer layers of claim 1-8 are put into the bowl of rack body, and each buffer layer is made to distinguish
It is corresponding with each metal electrode of rack body, make it will not short circuit；
S2, tin cream is put on the positive and negative electrode of buffer layer；
S3, flip-chip is placed on the buffer layer, and the electrode of flip-chip is corresponding with buffer layer respectively；
S4, Reflow Soldering is crossed so that flip-chip is welded on the buffer layer by tin cream, and buffer layer is welded on the metal of rack body
On electrode, and the buffer layer, flip-chip, rack body are once welded and fixed by Reflow Soldering；
S5, point packing colloid；
S6, baking, make packing colloid cure.
10. a kind of forming method of flip chip packaging structure according to claim 9, it is characterised in that：The step
The thickness of put tin cream is 40-200 μm in S2.
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| CN201710101738.0A CN106653977B (en) | 2017-02-24 | 2017-02-24 | A kind of flip chip packaging structure and forming method |
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| CN201710101738.0A CN106653977B (en) | 2017-02-24 | 2017-02-24 | A kind of flip chip packaging structure and forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107819065B (en) * | 2017-10-27 | 2024-08-02 | 广东晶科电子股份有限公司 | Flip LED light-emitting device and preparation method thereof |
| CN109166949A (en) * | 2018-09-18 | 2019-01-08 | 宁波升谱光电股份有限公司 | A kind of flip LED device and preparation method thereof |
| CN109212835A (en) * | 2018-11-14 | 2019-01-15 | 深圳市善工工业自动化设备有限公司 | Anticollison block and its production technology in illuminating module |
| CN111525017B (en) * | 2020-07-03 | 2020-10-02 | 华引芯（武汉）科技有限公司 | Flip LED all-inorganic device and manufacturing method thereof |
| CN113314659A (en) * | 2021-06-01 | 2021-08-27 | 苏州雷霆光电科技有限公司 | LED flash lamp |
| CN113809032A (en) * | 2021-08-09 | 2021-12-17 | 华为技术有限公司 | Power module, power supply circuit and chip |
| CN114388673B (en) * | 2021-12-08 | 2023-11-14 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
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