CN106449542B - A kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form - Google Patents
A kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form Download PDFInfo
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- CN106449542B CN106449542B CN201610730750.3A CN201610730750A CN106449542B CN 106449542 B CN106449542 B CN 106449542B CN 201610730750 A CN201610730750 A CN 201610730750A CN 106449542 B CN106449542 B CN 106449542B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The present invention proposes a kind of encapsulating structure of the semiconductor luminous chip of airtight no silica gel of form, is related to lighting technical field.Packaging system includes: ceramic body, the ceramic body is a plate object, it is equipped with metal frame rest area, chip rest area and weldering gold thread area in the surface of ceramic body, the metal frame rest area, chip rest area and weldering gold thread area are coated with the weldable material that can be carried out welding；Metal frame surface described in the metal is coated with weldable material；Die bond material is equipped between the semiconductor luminous chip and ceramic body；The gold thread is placed in weldering gold thread area；It is equipped with the first preset weld tabs between the ceramic body and metal frame, the second preset weld tabs is equipped between the metal frame and glass, the fusing point of the second preset weld tabs is lower than the fusing point of the first preset weld tabs.The present invention greatly reduces the investment of cost, and packaging technology is simple, and air-tightness and reliability are further improved, moreover it is possible to increase luminous flux and optical power.
Description
Technical field
The present invention relates to lighting technical fields, specifically refer to a kind of semiconductor luminous chip of airtight no silica gel of form
Encapsulating structure.
Background technique
The encapsulation of luminescence chip mostly uses the organic materials such as silica gel, epoxy resin to be sealed protection to chip at present, this
A little material transparents are good, it is easily operated, light withdrawal amount can be improved, but UV resistant performance is poor, the easily aging under ultraviolet environments
It is rotten.Traditional semiconductor luminous chip encapsulating structure packaged type is to do encapsulating material with silica gel, and encapsulation encounters ultraviolet lighting
Penetrate, be easy cracking aging, being easy dead lamp leads to component failure, therefore organic material be unfavorable for encapsulating ultraviolet LED device and
With the unsuitable device using organic material.So seeking the easy inorganic encapsulated technique of anti-ultraviolet aging and its matched portion
Part is very necessary.
Occur the packaging technology that ceramic, metal adds glass in the market thus, but needs to adopt when the above-mentioned packaging technology of application
It with multiple weldments and needs by parallel seam welding technology, packaging technology is cumbersome and to the more demanding of equipment, increases cost
Investment, in addition, encapsulation after air-tightness cannot guarantee well.
Summary of the invention
In view of the deficiencies of the prior art, the present invention proposes a kind of encapsulation of the semiconductor luminous chip of airtight no silica gel of form
Structure, the device are improved for existing packaging technology, greatly reduce the investment of cost, packaging technology is simple, and gas
Close property and reliability are further promoted, moreover it is possible to increase luminous flux and optical power.
To achieve the goals above, the technical solution adopted by the present invention is as follows:
The present invention proposes a kind of encapsulating structure of the semiconductor luminous chip of airtight no silica gel of form, the packaging system packet
Include: ceramic body, the ceramic body be a plate object, the surface of ceramic body be equipped with metal frame rest area, chip rest area and
Gold thread area is welded, the metal frame rest area is in the upper surface periphery of ceramic body, and the weldering gold thread area is located at chip rest area
Two sides, the metal frame rest area, chip rest area and weldering gold thread area are coated with the weldable material that can be carried out welding, the weldering gold
Line area perforates and simultaneously fills up elargol in hole, sets that there are three pads in the bottom surface of the ceramic body；Metal frame, the metal frame are placed in
Metal frame rest area, the metal frame are arranged around the upper surface of ceramic body periphery, and the metal frame and ceramic body surround one
Concave structure, the metal frame surface are coated with weldable material；Semiconductor luminous chip, the semiconductor luminous chip are set
Die bond material is equipped between chip rest area, the semiconductor luminous chip and ceramic body；Gold thread, the gold thread are placed in weldering gold
Line area；Glass, the glass cover are set on metal frame, are coated with solderable material in place of connecting on the glass with the metal frame
Material；Wherein, it is equipped with the first preset weld tabs between the ceramic body and metal frame, it is pre- that second is equipped between the metal frame and glass
Weld tabs is set, the fusing point of the second preset weld tabs is lower than the fusing point of the first preset weld tabs.
Further, the weldable material is selected from one of gold, palladium, silver and golden tin.
Further, one kind or scaling powder selected from elargol, the solderable metal material of flux-free of the die bond material.
Further, the fusing point of the described first preset weld tabs is greater than 300 degree, and the fusing point of the second preset weld tabs is 150
~300 degree.
Further, the opposite side of the metal frame is equipped with stair-stepping support portion, and the glass is set to support portion
On, the second preset weld tabs is equipped between the glass and the support portion.
Optionally, the semiconductor luminous chip is vertical structure, is equipped with a wire welding area and a crystal bonding area, described
Welding material can be connect by being coated on wire welding area and crystal bonding area, and the wire welding area perforates and fills up elargol in hole, and is set to ceramics
Three pads of body bottom surface are connected；The semiconductor luminous chip can be flip-chip, be equipped with two independent crystal bonding areas, Gu
Crystalline region, which plates, can connect welding material, and crystal bonding area perforates and fills up elargol in hole, and is set to three pads of ceramic body bottom surface
Conducting
Optionally, the glass is one of horizontal plate glass, spherical symmetric lens and asymmetrical optical lens
Further, the described first preset weld tabs can be substituted by the first flux-free solder, and the second preset weld tabs can
It being substituted by the second flux-free solder, the fusing point of the solder of the second flux-free is lower than the fusing point of the solder of the first flux-free,
It is one of tin antimony nickel, tin silver copper, tin bismuth silver and tin bismuth or a variety of that the welding material of flux-free, which is selected from,.
According to another aspect of the present invention, the welding procedure of a kind of ceramic body and metal frame and glass is proposed, wherein
Welding between ceramic body and metal frame is the first preset weld tabs or solder to complete, specifically includes the following steps:
Metal frame, the first preset weld tabs or solder and ceramic magnet 1 deoil decontamination cleaning, dry；
Under vacuum conditions, in addition under hydrogen-oxygen atmosphere gas or inert gas, it is heated to fusing point or more, carries out solderer
Skill, so that metal frame is fixed on ceramic magnet；
Welding between metal frame and glass is completed based on the second preset weld tabs or solder, is specifically included as follows
Step:
Second preset weld tabs or solder, glass deoil decontamination cleaning, dry；
Under vacuum conditions, in addition hydrogen-oxygen atmosphere body or inert gas, heat the second preset weld tabs or solder melt point or more,
Soldering processes are carried out, so that glass is fixed on metal frame.
Beneficial effects of the present invention:
1. the present invention uses inorganic encapsulated, Vacuum Package is carried out using pottery magnetic, metal and glass, and is avoided using tradition
Silicone encapsulation mode, so as to avoid adverse consequences such as silica gel aging, the cracking generated due to ultraviolet light, then
Increase luminous flux and optical power；
2. compared with prior art, the present invention is by being coated with solderable material on the insulating materials surface such as ceramics and glass
Expect, then preset the weld tabs of different melting points between ceramics and metal frame and metal frame and glass, passes through weldable material
Intermediate effect, the solidification of entire packaging system finally can be completed by heating fixed line again, whole process only needs in a vacuum
Heating, simple and reliable process reduce the investment of equipment, reduce costs；
3. whole welding of the invention are completed by weld tabs, without using multiple weldments, yields is high.
Detailed description of the invention
Fig. 1 is a kind of knot of the embodiment one of the encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form of the present invention
Structure schematic diagram；
Fig. 2 is the present invention a kind of glass and metal frame of the encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form
Another welding manner；
Fig. 3 is a kind of knot of the embodiment two of the encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form of the present invention
Structure schematic diagram；
Fig. 4 is a kind of knot of the embodiment three of the encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form of the present invention
Structure schematic diagram；
Fig. 5 is semiconductor light emitting core in a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form of the present invention
Piece is the structural schematic diagram of vertical structure；
Fig. 6 is semiconductor light emitting core in a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form of the present invention
Piece is the structural schematic diagram of flip-chip.
Wherein, 1- ceramic body, 2- metal frame, 3- semiconductor luminous chip, 4- die bond material, 5- gold thread, 6- glass, 7-
One preset weld tabs, the preset weld tabs of 8- second, 9- silver paste, 10- pad, 11- metal frame rest area, 12- chip rest area, 13- weldering
Gold thread area, 14- through-hole, 21- support portion.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the technical characteristic in embodiment and embodiment in the application can
To be combined with each other.For example, the first preset weld tabs or the second preset weld tabs described below can be replaced by solder, die bond material can
Replaced by preset weld tabs or solder.
As shown in Figure 1, a specific embodiment, the present invention propose a kind of partly leading for airtight no silica gel of form according to the present invention
The encapsulating structure of body luminescence chip, the packaging system mainly include ceramic body 1, metal frame 2, semiconductor luminous chip 3, gold thread 5
And glass 6.
Wherein, ceramic body 1 is one piece of plate object, is equipped with metal frame rest area 11 on the upper surface of ceramic body 1, chip is put
It sets area 12 and weldering gold thread area 13, metal frame 2 is placed on metal frame rest area 11, semiconductor luminous chip 3 is placed in chip rest area
On 12, gold thread 5 is welded in gold thread area 13, and metal frame rest area 11 is set to the peripheral part of the upper surface of ceramic body 1, weldering gold
Line area 13 is two and is located at the two sides of chip rest area 12, since ceramics are insulating materials, in order to make ceramics have weldering
Connection function, the present invention are coated with weldable material, example in above-mentioned metal frame rest area 11, chip rest area 12 and weldering gold thread area 13
Such as gold, certainly, above-mentioned weldable material are not limited to gold, and weldable material can be chosen from inert metal, specifically, solderable
Material is selected from one of gold, palladium, silver and golden tin.
Metal frame 2 is placed in metal frame rest area 11, and metal frame 2 is arranged, metal frame around the upper surface of ceramic body 1 periphery
2 surround a concave structure with ceramic body 1, and 2 surface of metal frame is coated with weldable material, chip rest area 12 and weldering gold thread area
13 are in concave structure.
Die bond material 4 is equipped between semiconductor luminous chip 3 and ceramic body 1, above-mentioned die bond material 4 is preferably elargol die bond
Material.Semiconductor luminous chip 3 is placed on die bond material 4, achieves that die bond material 4 to semiconductor light emitting core by heating
The solidification of piece 3.
Glass 6 is covered on metal frame 2, is coated with weldable material in place of connecting on glass 6 with metal frame.
By it is above it is found that the present invention by the surface of insulating materials ceramic body 1 and glass 6 plate weldable material,
So that ceramic body 1 and glass 6 can weld together with intermediate metal frame 2, then by ceramic body 1 and metal frame 2 it
Between preset the first preset weld tabs 7, the second preset weld tabs 8 is preset between metal frame 2 and glass 6, and need to guarantee
The fusing point of two preset weld tabs 8 is lower than the fusing point of the first preset weld tabs 7, it is preferred that the fusing point of above-mentioned first preset weld tabs 7 is greater than
300 degree, and the fusing point of the second preset weld tabs 8 is 150~300 degree, and so far, above-mentioned entire packaging system is placed under vacuum condition
The perfect encapsulation of semiconductor luminous chip 3 can be realized in heating.During heating, since the first preset weld tabs 7 and second is pre-
Weld tabs 8 is set with the temperature difference, the synchronous of two kinds of weld tabs is avoided and melts, more can guarantee the packaging effect of semiconductor luminous chip 3.
In the present embodiment, one of gold germanium, gold silicon or yellow gold may be selected in the first preset weld tabs 7.Certainly, at it
In its embodiment, above-mentioned first preset weld tabs 7 can be replaced by the solder of same fusing point, meanwhile, solder can also from gold germanium, gold silicon or
Middle selection in yellow gold；Above-mentioned second preset weld tabs 8 may be selected in golden tin, tin silver copper, tin antimony, tin copper, Xi Yin and tin bismuth
One kind, equally, when replaced the solder that the above-mentioned second preset weld tabs 8 is required by same fusing point, material can also be from golden tin, tin
It is selected in silver-bearing copper, tin antimony, tin copper, Xi Yin and tin bismuth.
Connection between metal frame 2 and ceramic body 1 of the present invention will guarantee that the air-tightness between metal frame 2 and Bo Tao body 1 is wanted
It asks, metal frame 2 is wanted can be with the expansion alloy with magnetic hermetic seal of making pottery, it is preferred that the material of metal frame 2 used in the present invention can
Select one of copper, aluminium, tungsten silver or tungsten copper.Guaranteeing under above-mentioned precondition, so that it may to ceramic body 1 and metal frame 2
And the welding between metal frame 2 and glass 6.
In the present embodiment, the welding between ceramic body 1 and metal frame 2 is first pre- at 300 degree or more based on fusing point
It sets weld tabs 7 or solder to complete, specifically comprises the following steps: (A) metal frame 2, fusing point is in 300 degree or more the first preset welderings
Piece 7 or solder and ceramic magnet 1 deoil decontamination cleaning, dry；(B) under vacuum conditions, in addition hydrogen-oxygen atmosphere gas or inert gas
Under body, 300 degree or more are heated to, soldering processes are carried out, so that metal frame 2 is fixed on ceramic magnet 1.Metal frame 2 and glass
Welding between 6 is that the second preset weld tabs 8 or solder based on fusing point at 150 degree to 300 degree are completed, specifically include as
Lower step: the second preset weld tabs 8 or solder that (A) 150 to 300 is spent, glass 6 deoil decontamination cleaning, dry；(B) in vacuum ring
Under border, in addition hydrogen-oxygen atmosphere body or inert gas, are heated to 150 degree or more, soldering processes are carried out, so that glass 6 is fixed on gold
Belong on frame 2.
So far, the encapsulation of semiconductor luminous chip 3 is accomplished, the present invention use inorganic encapsulated, using ceramics, metal and
Glass Vacuum Package under vacuum conditions does not have to silicone encapsulation, to avoid generating silica gel aging because of ultraviolet light, split
It is de- after solution etc. is bad, and increase luminous flux and optical power.
In another embodiment of the invention, the welding between metal frame 2 and glass 6 can also be using such as lower section
Method, as shown in Fig. 2, i.e. glass 6 in the position of respective metal frame 2 plates weldable material, in 6 respective metal frame of glass, 2 position
Glass of beating make a call to 61 holes and fill out silver paste in glass orifice 61, glass 6 is away from another layer of 2 position of corresponding metal frame of metal frame 2
Plate weldable material.
In other embodiments of the present invention, the welding between ceramic body 1 and metal frame 2 and metal frame 2 and glass 6
Can directly be completed by laser welding mode, by means of which when, do not need to use preset weld tabs or solder, by ceramic body
Position between 1 and metal frame 2 or metal frame 2 and glass 6 fixes, then by way of laser welding can a step it is complete
At.
Certainly, except as described, metal frame 2 can use traditional parallel soldering and sealing welding manner with glass 6, be welded on
Together, it the steps include: that (A) glass 6 deoils decontamination cleaning, it is dry；(B) by the soldering tip of parallel Feng welding machine to metal frame 2 and glass
The place of 6 connections is positioned, and just uses continuous impulse seam weld, just glass 6 and metal frame 2 are welded together.
As shown in figure 3, second embodiment according to the present invention, in the present embodiment, above-mentioned glass 6 can be changed to spherical symmetrical
Lens or asymmetrical optical lens.
As shown in figure 4, third embodiment according to the present invention, in the present embodiment, the opposite side of metal frame 2 are equipped with rank
The support portion 21 of scalariform, glass 6 are set on support portion 21, and the second preset weldering is equipped between glass 6 and the support portion 21
Piece 8, the setting of this structure are and more beautiful in shape so that the connection between metal frame 2 and glass 6 is more closely reliable
It sees.
It should be noted that semiconductor luminous chip 3 in above embodiments can be horizontal structure or vertical structure, or half
Conductor luminescence chip 3 can be flip-chip.When semiconductor luminous chip 3 is horizontal structure, referring to Fig.1, chip upper end has just
Pole, cathode, chip positive electrode and negative electrode are connected with positive wire welding area and cathode wire welding area welding gold thread respectively；When semiconductor is sent out
When optical chip 3 is vertical structure, as shown in figure 5, a kind of polar electric pole in chip upper end, then one wire welding area of ceramic magnet, chip are electric
Pole is connected with wire welding area welding gold thread；When semiconductor luminous chip is flip-chip, as shown in fig. 6, ceramic magnet positive and negative anodes weld
Disk isolation is not turned on, and flip-chip anode negative terminal pad is placed in above ceramic magnet positive and negative anodes pad.In addition, in above embodiments
Gold thread 5 can be changed to copper plating gold thread or copper wire.
The present invention is by being coated with weldable material on insulating materials surfaces such as ceramic body 1 and glass 6 as a result, then is making pottery
The weld tabs that different melting points are preset between porcelain body 1 and metal frame 2 and metal frame 2 and glass 6, by weldable material
Between act on, the solidification of entire packaging system finally can be completed by heating fixed line again, whole process need to only heat in a vacuum,
Simple and reliable process reduces the investment of equipment, reduces costs.
The present invention is equipped with pad 10 in the lower surface of ceramic body 1, and position and the weldering gold thread area 13 and chip of pad 10 are put
The position for setting area 12 is corresponding.Further, in order to realize the connection between gold thread 5 and pad 10, in the weldering gold thread of ceramic body 1
Area 13 is equipped with the through-hole 14 through ceramic body 1, then silver paste 9 is injected in through-hole 14, and gold thread 5 can by the effect of silver paste 9
To be connected with pad 10.
By the above it is found that all welding solidification process of the invention can be completed in several ways, especially
For the mode that is heating and curing under vacuum conditions, all it is to be completed by preset weld tabs, is different from conventional method
Needs by the method for multiple weldments, simplify packaging technology and improve yields.
It is above for a better understanding of the present invention, to be only exemplary to the description of each embodiment of the present invention,
And it is not intended to limit the invention.It should be noted that in the above description, describing and/or showing for a kind of embodiment
Feature can be used in one or more other embodiments in a manner of same or similar, in other embodiment
Feature is combined, or the feature in substitution other embodiment.It will be understood by those skilled in the art that of the invention not departing from
In the case where inventive concept, for the variations and modifications that embodiment described above carries out, belong to of the invention
In range.
Claims (7)
1. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form, which is characterized in that the packaging system packet
It includes:
Ceramic body (1), the ceramic body (1) are a plate object, are equipped with metal frame rest area on the ceramic body (1) surface
(11), chip rest area (12) and weldering gold thread area (13), the metal frame rest area (11) are in the upper surface periphery of ceramic body,
Weldering gold thread area (13) is located at the two sides of chip rest area (12), the metal frame rest area (11), chip rest area (12)
And weldering gold thread area (13) is coated with the weldable material that can be carried out welding, the weldering gold thread area (13) is perforated and fills up elargol in hole
(9), set in the bottom surface of the ceramic body (1) there are three pad (10), including positive terminal pad, negative terminal pad and heat sink, it is described just,
Negative terminal pad (10) is connected with the weldering gold thread area (13) for being located at chip rest area (12) two sides respectively by elargol (9)；
Metal frame (2), the metal frame (2) are placed in metal frame rest area (11), and the metal frame (2) is around ceramic body (1)
Upper surface is peripheral and is arranged, and the metal frame (2) and ceramic body (1) surround a concave structure, metal frame (2) surface
It is coated with weldable material；
Semiconductor luminous chip (3), the wavelength of the semiconductor luminous chip (3) is in 100nm~3000nm, the semiconductor hair
Optical chip (3) is placed in chip rest area (12), and die bond material is equipped between the semiconductor luminous chip (3) and ceramic body (1)
(4)；
Gold thread (5), the gold thread (5) are placed in weldering gold thread area (13), for connecting semiconductor luminous chip (3) pad and weldering gold thread
Area (13)；
Glass (6), the glass (6) are set on metal frame (2), and connect on the glass (6) with the metal frame (2) place plating
There is weldable material；Glass orifice (61) is beaten in glass (6) respective metal frame (2) position and fills out silver paste, glass in glass orifice (61)
The other side that glass (6) is away from metal frame (2) corresponds to metal frame (2) position and plates weldable material；Wherein, the ceramic body
(1) it is equipped with the first preset weld tabs (7) between metal frame (2), it is preset that second is equipped between the metal frame (2) and glass (6)
Weld tabs (8), the fusing point of the second preset weld tabs (8) are lower than the fusing point of the first preset weld tabs (7).
2. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form according to claim 1, feature
It is, the weldable material is selected from one of gold, palladium, silver and golden tin.
3. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form according to claim 1, feature
Be, the die bond material (4) be selected from elargol, golden tin, tin silver copper, tin antimony, flux-free solderable metal material one kind
Or scaling powder.
4. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form according to claim 1, feature
It is, the fusing point of the first preset weld tabs (7) is greater than 300 degree, and the fusing point of the second preset weld tabs (8) is 150~300
Degree.
5. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form according to claim 1, feature
It is,
The semiconductor luminous chip (3) be vertical structure, be equipped with a wire welding area and a crystal bonding area, the wire welding area and
Welding material can be connect by being coated on crystal bonding area, and the wire welding area and crystal bonding area perforate and fill up elargol in hole, and are set to ceramics
The positive and negative anodes pad (10) of body (1) bottom surface is connected；
The semiconductor luminous chip (3) can be flip-chip, be equipped with two crystal bonding areas being not turned on, crystal bonding area, which plates, to be connect
Welding material, crystal bonding area perforates and simultaneously fills up elargol in hole, and is set to the positive and negative anodes pad (10) of ceramic body (1) bottom surface and leads
It is logical.
6. a kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form according to claim 5, feature
It is, the first preset weld tabs (7) can be substituted by the first flux-free solder, and the second preset weld tabs (8) can be by second
Flux-free solder substitution, the fusing point of the solder of the second flux-free are lower than the fusing point of the solder of the first flux-free, helpless weldering
It is one of tin antimony nickel, tin silver copper, tin bismuth silver and tin bismuth or a variety of that the welding material of agent, which is selected from,.
7. the welding procedure of a kind of ceramic body and metal frame and glass, which is characterized in that wherein between ceramic body and metal frame
Welding is the first preset weld tabs or solder to complete, specifically includes the following steps:
Metal frame, the first preset weld tabs or solder and ceramic magnet deoil decontamination cleaning, dry；
Under vacuum conditions, in addition under hydrogen-oxygen atmosphere gas or inert gas, it is heated to fusing point or more, soldering processes is carried out, makes
Metal frame is obtained to be fixed on ceramic magnet；
Welding between metal frame and glass is completed based on the second preset weld tabs or solder, and following step is specifically included
It is rapid:
Glass (6) plates weldable material in the position of respective metal frame (2), in beating for glass (6) respective metal frame (2) position
Glass orifice (61), and silver paste is filled out in glass orifice (61), glass (6) is away from another layer of corresponding metal frame (2) of metal frame (2)
Position plates weldable material.
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| CN106848043A (en) * | 2017-03-28 | 2017-06-13 | 光创空间（深圳）技术有限公司 | The method for packing and LED component of a kind of LED component |
| CN107863436B (en) * | 2017-10-13 | 2019-11-19 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate and preparation method thereof containing metal cavity |
| CN107833838B (en) * | 2017-11-22 | 2019-10-18 | 华进半导体封装先导技术研发中心有限公司 | A kind of the high reliability packaging structure and its manufacturing method of air-tightness device |
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| CN108598246A (en) * | 2018-07-13 | 2018-09-28 | 广东格斯泰气密元件有限公司 | A kind of SMD-UV-LED of vacuum tight encapsulation |
| CN113394320B (en) * | 2020-03-11 | 2023-04-07 | 隆达电子股份有限公司 | Light emitting diode packaging structure |
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| DE212021000447U1 (en) * | 2020-10-23 | 2023-05-15 | Shenzhen Jufei Optoelectronics Co., Ltd. | Light source assembly, LED device with light source assembly, display device and backlight module |
| CN113675316A (en) * | 2021-07-05 | 2021-11-19 | 深圳大道半导体有限公司 | UV-LED device and manufacturing method thereof |
| CN114199185A (en) * | 2021-12-10 | 2022-03-18 | 重庆航伟光电科技有限公司 | Airtight packaging structure of distance measuring optical device for vehicle |
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