CN104037316A - Inorganic LED packaging support and packaging method thereof - Google Patents
Inorganic LED packaging support and packaging method thereof Download PDFInfo
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- CN104037316A CN104037316A CN201410273557.2A CN201410273557A CN104037316A CN 104037316 A CN104037316 A CN 104037316A CN 201410273557 A CN201410273557 A CN 201410273557A CN 104037316 A CN104037316 A CN 104037316A
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- Prior art keywords
- rack body
- led
- glass lens
- metal level
- inorganic encapsulated
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 230000007704 transition Effects 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 4
- 239000010959 steel Substances 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 239000006071 cream Substances 0.000 claims description 21
- 238000012856 packing Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000006978 adaptation Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 238000001125 extrusion Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Disclosed are an inorganic LED packaging support and a packaging method. The packaging method includes: (1) subjecting an LED chip to crystal solidification and wire welding; (2) printing solder paste on a second step of a support body by a steel net printing technology; (3) preheating the support body so that the solder paste cannot melt and interference fit between a first step of the support body and glass lenses in a normal temperature can be expanded into clearance fit; (4) arranging the glass lenses on a mold fit for the support body; (5) taking out the preheated support body and combining the preheated support body with the glass lenses; (6) subjected an LED support with the lenses to reflow welding for one time. Since a thermal expansion coefficient of a material used on a second metal layer on a first transition surface is larger than that of the glass lenses, and expanding size of the first step is larger than that of the glass lenses, fit between the glass lenses and the first step during working is changed to transition fit, extruding stress is released, and fatigue life of the material is improved.
Description
Technical field
The present invention relates to LED support, especially a kind of LED inorganic encapsulated support and method for packing thereof.
Background technology
LED is light-emitting diode, is a kind of solid semiconductor luminescent device.Along with the development of LED technology, the encapsulation wave band of LED is gradually toward even deep ultraviolet future development of near ultraviolet, and power is also toward the development of high-power aspect.But adopt the encapsulation of traditional organic silica gel material, such as, direct insertion LED adopts epoxy encapsulation more, adopting surface mounted LED adopts silicones or silica gel packaging more, and this type of organosilicon material is under long-time service condition, because the impact of the factors such as water, light, heat was easily lost efficacy, cause the sharp-decay of luminous flux, the radiant flux etc. of device, even cause component failure.For great power LED integrated optical source, due to a variety of causes, as situations such as chip heating, heat radiation deficiencies, cause device surface excess Temperature, and then cause component failure.The defect of bringing for fear of organic encapsulation, LED inorganic encapsulated technology is risen gradually, as Chinese patent, a kind of LED method for packing that publication number is 103325922, it discloses and has comprised the following steps (1) preliminary treatment; Comprising the surface of glass cover-plate, expansion alloy and substrate weld zone being carried out to preliminary treatment (2) welding (a) metal and ceramic welding, first expansion alloy and substrate mounting are placed in fixture, ceramic substrate connects negative electrode, expansion alloy connects anode, adopt high-frequency induction heating, fixture is placed in alternating magnetic field, and regulating frequency control expansion alloy temperature is at 200 ~ 300 DEG C; Apply the direct voltage of 700 ~ 900V, after holding temperature, voltage 15 ~ 30min, direct voltage is stopped, ceramic substrate and expansion alloy are welded together to (b) metal and glass welding, glass cover-plate is moved on on expansion alloy, expansion alloy connects anode, and glass cover-plate connects negative electrode, and fixture is placed in alternating magnetic field, apply the direct voltage of 600 ~ 900v, after holding temperature, voltage 15 ~ 50min, direct voltage is stopped, welding completes.Because LED support temperature in the time working can raise, LED support and the glass lens phenomenon of all can expanding with heat and contract with cold, because glass lens is different from the material of rack body, therefore the flexible amplitude of the two is different, the stress that weld causes due to thermal expansion coefficient difference, the fatigue that increases weld layer, has a greatly reduced quality the useful life of LED support.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of LED inorganic encapsulated support and method for packing thereof, overcomes the problem that causes stress to occur due to thermal expansion coefficient difference between existing inorganic encapsulated glass lens and support.
For solving the problems of the technologies described above, one of technical scheme of the present invention is: a kind of LED inorganic encapsulated support, the glass lens that comprises rack body and cover with described rack body, described rack body is provided with the depression for accommodating LED chip, the top inward flange of described rack body is provided with the first step arranging around described depression, the top of described rack body is arranged with second step outward in described first step, second step is higher than first step, between second step and first step, form First Transition face, between rack body top and second step, form the second transition face, the edge of described glass lens is arranged on described first step, the side edge of described glass lens is provided with the first metal layer, described First Transition face is provided with the second metal level, described the second metal level is corresponding with the bottom of the first metal layer, and under normal temperature, the first metal layer and the second metal level are interference fit, described the second transition face is provided with the 3rd metal level, and the top of described the 3rd metal level, second step and the first metal layer surrounds the groove around described first step jointly, in described groove, is filled with tin cream.First Transition face and glass lens interference fit at normal temperatures, can produce the extrusion stress between metal level, thereby strengthens air-tightness.Because interference fit rests in applicable scope, in the time that rack body heats, its size expansion is matched in clearance, thereby facilitates the installation of glass lens; After encapsulation, when work ultraviolet LED luminous and produce heat, heat whole device, because the thermal coefficient of expansion of the second metal layers material on First Transition face is greater than the thermal coefficient of expansion of glass lens, the size that first order step opens will be greater than the size that glass lens opens, thereby the glass lens while making work becomes interference fits with coordinating of first step, has discharged extrusion stress, has improved the fatigue life of material.Tin paste layer is placed in groove, the contacts side surfaces of tin cream and the second transition face, second step and glass lens, can ensure the welded seal of three faces in reflow process, tin cream use amount more or less all can reach seal request simultaneously, thereby expand the admissible error of tin cream use amount, the technical requirement that has reduced brush tin cream technique, has improved economic benefit.Because still there is the coat of metal at the contacts side surfaces place of First Transition face and glass lens, the matched in clearance in reflow process allows tin cream to infiltrate in gap, has filled up the microcosmic out-of-flatness that glass lens side may occur, thereby improves the reliability of welding.Tin paste layer has retained the degree of freedom of upper surface, allows tin cream expanding with heat and contract with cold under different temperatures, thereby has discharged the stress that weld causes due to thermal expansion coefficient difference, improves the fatigue life of weld layer.
As improvement, described second step is provided with the 3rd metal level.
As improvement, described the first metal layer, the second metal level and the 3rd metal level are silver coating, Gold plated Layer or alloy-layer.
As improvement, described glass lens is square.
As improvement, described glass lens is provided with hemisphere jut.
As improvement, described rack body material is aluminium, copper or pottery.This programme adopts metal or ceramic material as rack body, can greatly reduce thermal resistance, improves the useful life of LED, and pottery is more suitable for as insulating material the design that thermoelectricity separates.
As improvement, described depression is square.
For solving the problems of the technologies described above, two of technical scheme of the present invention is: one is LED inorganic encapsulated support method for packing as claimed in claim 1, comprises the following steps:
(1) in the depression of LED support body, LED chip is carried out to die bond, bonding wire;
(2) adopt steel mesh typography to brush tin cream on the second step of rack body;
(3) rack body is carried out to preheating, preheat temperature is 120 DEG C to 150 DEG C, ensure that at this temperature, tin cream is unlikely to melt, and the interference fit of original normal temperature lower carriage body first step and glass lens expands into matched in clearance;
(4) glass lens is arranged on the mould with rack body adaptation;
(5) take out the rack body of preheating and it is coordinated with glass lens;
(6) LED support that installs lens is crossed a Reflow Soldering.
As improvement, the concrete grammar of described step (5): take out the rack body after preheating, overturn 180 ° and be buckled on glass lens, then rack body is overturn to 180 ° again together with glass lens, take out mould.
The beneficial effect that the present invention compared with prior art brought is:
Under normal temperature, glass transparent and rack body are interference fit, can produce the extrusion stress between metal level, thereby strengthen air-tightness;
Because interference fit rests in applicable scope, in the time that rack body heats, its size expansion is matched in clearance, thereby facilitates the installation of glass lens;
When LED work, because the thermal coefficient of expansion of the second metal layers material on First Transition face is greater than the thermal coefficient of expansion of glass lens, the size that first order step opens will be greater than the size that glass lens opens, thereby the glass lens while making work becomes interference fits with coordinating of first step, discharge extrusion stress, improved the fatigue life of material.
Brief description of the drawings
Fig. 1 is front view of the present invention.
Fig. 2 is vertical view of the present invention.
Fig. 3 is decomposition view of the present invention.
Fig. 4 is the glass lens schematic diagram of another form.
Embodiment
Below in conjunction with Figure of description, the invention will be further described.
As shown in Figures 1 to 3, a kind of LED inorganic encapsulated support, the glass lens 4 that comprises rack body 1 and cover with described rack body 1.Described glass lens 4 is square, and described glass lens 4 is provided with hemisphere jut, makes lens have certain luminous intensity distribution effect, and in addition, as shown in Figure 4, this glass lens 4 can be also simple glass plate.As shown in Figure 3, described rack body 1 is provided with the square depression 3 for accommodating LED chip, the top inward flange of described rack body 1 is provided with the first step 6 arranging around described depression, the top of described rack body 1 is arranged with second step 7 outside described first step 6, second step 7 is higher than first step 6, between second step 7 and first step 6, form First Transition face, between rack body 1 top and second step 7, form the second transition face, the edge of described glass lens 4 is arranged on described first step 6.The side edge of described glass lens 4 is provided with the first metal layer 10, and described First Transition face is provided with the second metal level 8, and described the second metal level 8 is corresponding with the bottom of the first metal layer 10, and under normal temperature, the first metal layer 10 and the second metal level 8 are interference fit; Described second step 7 is provided with the 3rd metal level 9, and described the second transition face is provided with the 3rd metal level 9, and described the first metal layer 10, the second metal level 8 and the 3rd metal level 9 are silver coating, Gold plated Layer or alloy-layer; The top of described the 3rd metal level 9, second step 7 and the first metal layer 10 surrounds the groove 5 around described first step 6 jointly, in described groove 5, is filled with tin cream.
The method for packing of LED inorganic encapsulated support:
(1) in the depression of LED support body 1, LED chip is carried out to die bond, bonding wire;
(2) adopt steel mesh typography to brush tin cream on the second step 7 of rack body 1;
(3) rack body 1 is carried out to preheating, preheat temperature is 120 DEG C to 150 DEG C, ensure that at this temperature, tin cream is unlikely to melt, and original normal temperature lower carriage body 1 first step 6 expands into matched in clearance with the interference fit of glass lens 4;
(4) glass lens 4 is arranged on the mould with rack body 1 adaptation;
(5) take out the rack body 1 after preheating, overturn 180 ° and be buckled on glass lens 4, then rack body 1 is overturn to 180 ° again together with glass lens 4, take out mould;
(6) LED support that installs lens is crossed a Reflow Soldering.
This programme adopts metal or ceramic material as rack body 1, can greatly reduce thermal resistance, improves the useful life of LED, and pottery is more suitable for as insulating material the design that thermoelectricity separates.First Transition face and glass lens 4 interference fit at normal temperatures, can produce the extrusion stress between metal level, thereby strengthen air-tightness.Because interference fit rests in applicable scope, in the time that rack body 1 heats, its size expansion is matched in clearance, thereby facilitates the installation of glass lens 4; After encapsulation, when work ultraviolet LED luminous and produce heat, heat whole device, because the thermal coefficient of expansion of the second metal level 8 material therefors on First Transition face is greater than the thermal coefficient of expansion of glass lens 4, the size that first order step opens will be greater than the size that glass lens 4 opens, thereby the glass lens while making work 4 becomes interference fits with coordinating of first step 6, has discharged extrusion stress, has improved the fatigue life of material.Tin paste layer is placed in groove, the contacts side surfaces of tin cream and the second transition face, second step 7 and glass lens 4, can ensure the welded seal of three faces in reflow process, tin cream use amount more or less all can reach seal request simultaneously, thereby expand the admissible error of tin cream use amount, the technical requirement that has reduced brush tin cream technique, has improved economic benefit.Because still there is the coat of metal at the contacts side surfaces place of First Transition face and glass lens 4, the matched in clearance in reflow process allows tin cream to infiltrate in gap, has filled up the microcosmic out-of-flatness that glass lens 4 sides may occur, thereby improves the reliability of welding.Tin paste layer has retained the degree of freedom of upper surface, allows tin cream expanding with heat and contract with cold under different temperatures, thereby has discharged the stress that weld causes due to thermal expansion coefficient difference, improves the fatigue life of weld layer.
Claims (9)
1. a LED inorganic encapsulated support, the glass lens that comprises rack body and cover with described rack body, it is characterized in that: described rack body is provided with the depression for accommodating LED chip, the top inward flange of described rack body is provided with the first step arranging around described depression, the top of described rack body is arranged with second step outward in described first step, second step is higher than first step, between second step and first step, form First Transition face, between rack body top and second step, form the second transition face, the edge of described glass lens is arranged on described first step, the side edge of described glass lens is provided with the first metal layer, described First Transition face is provided with the second metal level, described the second metal level is corresponding with the bottom of the first metal layer, and under normal temperature, the first metal layer and the second metal level are interference fit, described the second transition face is provided with the 3rd metal level, and the top of described the 3rd metal level, second step and the first metal layer surrounds the groove around described first step jointly, in described groove, is filled with tin cream.
2. a kind of LED inorganic encapsulated support according to claim 1, is characterized in that: described second step is provided with the 3rd metal level.
3. a kind of LED inorganic encapsulated support according to claim 1, is characterized in that: described the first metal layer, the second metal level and the 3rd metal level are silver coating, Gold plated Layer or alloy-layer.
4. a kind of LED inorganic encapsulated support according to claim 1, is characterized in that: described glass lens is square.
5. a kind of LED inorganic encapsulated support according to claim 4, is characterized in that: described glass lens is provided with hemisphere jut.
6. a kind of LED inorganic encapsulated support according to claim 1, is characterized in that: described rack body material is aluminium, copper or pottery.
7. a kind of LED inorganic encapsulated support according to claim 1, is characterized in that: described depression is square.
8. a LED inorganic encapsulated support method for packing as claimed in claim 1, is characterized in that, comprises the following steps:
(1) in the depression of LED support body, LED chip is carried out to die bond, bonding wire;
(2) adopt steel mesh typography to brush tin cream on the second step of rack body;
(3) rack body is carried out to preheating, preheat temperature is 120 DEG C to 150 DEG C, ensure that at this temperature, tin cream is unlikely to melt, and the interference fit of original normal temperature lower carriage body first step and glass lens expands into matched in clearance;
(4) glass lens is arranged on the mould with rack body adaptation;
(5) take out the rack body of preheating and it is coordinated with glass lens;
(6) LED support that installs lens is crossed a Reflow Soldering.
9. LED inorganic encapsulated support method for packing according to claim 8, it is characterized in that: the concrete grammar of described step (5): take out the rack body after preheating, overturn 180 ° and be buckled on glass lens, then rack body is overturn to 180 ° again together with glass lens, take out mould.
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CN201410273557.2A CN104037316B (en) | 2014-06-19 | 2014-06-19 | A kind of LED inorganic encapsulateds support and its method for packing |
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CN201410273557.2A CN104037316B (en) | 2014-06-19 | 2014-06-19 | A kind of LED inorganic encapsulateds support and its method for packing |
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Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103137833A (en) * | 2013-03-15 | 2013-06-05 | 深圳市瑞丰光电子股份有限公司 | Method and structure of light emitting diode (LED) packaging |
CN103682047B (en) * | 2013-12-23 | 2017-01-25 | 中山市秉一电子科技有限公司 | Cover plate for inorganic packaging of LED |
-
2014
- 2014-06-19 CN CN201410273557.2A patent/CN104037316B/en active Active
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