CN1684278A - Packaging structure of light emitting diode and its packaging method - Google Patents

Packaging structure of light emitting diode and its packaging method Download PDF

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Publication number
CN1684278A
CN1684278A CNA2004100336729A CN200410033672A CN1684278A CN 1684278 A CN1684278 A CN 1684278A CN A2004100336729 A CNA2004100336729 A CN A2004100336729A CN 200410033672 A CN200410033672 A CN 200410033672A CN 1684278 A CN1684278 A CN 1684278A
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CN
China
Prior art keywords
pin
led
metal base
package structure
lead frame
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Pending
Application number
CNA2004100336729A
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Chinese (zh)
Inventor
李世辉
高湘凯
林俞延
何立仁
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Excellence Opto Inc
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Excellence Opto Inc
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Priority to CNA2004100336729A priority Critical patent/CN1684278A/en
Publication of CN1684278A publication Critical patent/CN1684278A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

This invention relates to a light emitting diode packaging structure characterizing in containing: a metal base, a lead frame with multiple lead pins, each one has a wire zone set circulating said metal base top, a plastic shell covering said metal base and said lead frame and having an open-end exposing the central region of the top of the metal base to form a reflecting cup and exposing the outer end of the lead pin and said wire zone, at least one illuminating chip combined to the base top surface in said cup and connected with said wire zone by multiple wires and a lens packaging said plastic shell.

Description

A kind of encapsulating structure of light-emitting diode and method for packing thereof
Technical field
The present invention relates to a kind of encapsulating structure and method for packing thereof of light-emitting diode, particularly relate to a kind ofly imbedding shoot mode, and form the encapsulating structure and the method for packing of high reflectance reflector in conjunction with lead frame, metal base and plastic casing.
Background technology
In the light-emitting diode packaging technology field,, thereby luminescence chip must be set directly on the good material of heat-sinking capability (as metal) because luminescence chip continues heat release in the process that produces light; But, as desire to take into account the convenience of encapsulation, then often need to use plastic material.But two material structures of plastic cement and heat radiating material but have the defective on the bond strength.
See also Fig. 1, be the encapsulating structure of light-emitting diode in the prior art (LED), utilize the plastic casing 10 coated wire framves 11 of injection molding earlier, the metal derby 12 of adhering again is in the perforation 17 of plastic casing 10 belows; These metal derby 12 end face punch formings recessed reflector 16 of falling vacant, when metal derby 12 combines with plastic casing 10, pass plastic casing 10 stair-stepping perforation 17, and make reflector 16 be exposed to plastic casing 10 end faces, with luminescence chip 13 then at the bottom of 16 glasss of the reflectors of metal derby 12; After treating that the luminescence chip 13 and pin 91,92 bonding wires 14 of lead frame 11 are finished, promptly form the external circuits of luminescence chip 13; Then follow lens 15 in plastic casing 10 and luminescence chip 13 tops again, just finish encapsulation.This structure can make light source be output in the special angle scope by the reflector 16 of metal derby 12; And metal derby 12 can be directly extremely extraneous with the temperature conduction of luminescence chip 13, plays thermolysis.
Yet said structure has some shortcomings.It utilizes adhesion system bond piece 12 and plastic casing 10, take place easily then irregular, produce the situation in space, thereby cause come off displacement, aqueous vapor of metal derby 12 to enter in the encapsulating structure so that cause product failure.And metal derby 12 stamping forming reflector 16 internal face reflectivity are not good enough, can't carry out high efficiency reflection and loss effectively with the light of luminescence chip 13 to side-irradiation; Secondly, the design of its lead frame 11 also can only can't make the encapsulation of multicore sheet, and single encapsulating structure also can't reach colour mixture or full-color light source output effect for the one chip encapsulation.
Fig. 2 is the package structure for LED of another kind of prior art, and substrate 00 end face of high coefficient of heat transfer is coated with a layer insulating 01, then is provided with surperficial copper layer 06,07 on the insulating barrier 01, then has the surface on the surperficial copper layer 06,07 and draws brush layer 05.At first, get out one by insulating barrier 01, expose the blind hole 08 of base material 00; After being fixed in chip 02 on the base material 00 in the blind hole 08, connect bonding wire 03 again on surperficial copper layer 06,07; At last, resin 04 is so promptly finished encapsulation with encapsulation bonding wire 03 and chip 02 on the point in blind hole 08; Being exposed to the surface and drawing the copper layer 06,07 of brush layer 05, promptly is two electrodes of product.
Though this structure does not have the bond strength problem of structure shown in Figure 1, but because the ability extreme difference of blind hole 08 internal face reflection chip 02 side direction light on the substrate 00, even if desire to improve with plating mode, also because of its Structure Designing Problem, only parcel plating is in blind hole 08 position; The antiradar reflectivity of blind hole 08 causes overall brightness to descend.
Therefore, existing light-emitting diode packaging technology is not taken into account heat-sinking capability, structural strength and light output efficiency as yet; In fact, on make efficiency and product reliability, has the suitable space of improving equally.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of package structure for LED and method for packing, not only can improve the heat-sinking capability and the light output efficiency of encapsulating structure, also can reach the full-color effect of colour mixture for the encapsulation of multicore sheet.
To achieve these goals, the invention provides a kind of package structure for LED, its characteristics are, comprise: a metal base; One lead frame has a plurality of pins, and respectively this pin has a wire welding area respectively, and described wire welding area is located on described metal base top side periphery; One plastic casing coats described metal base periphery and described lead frame, and it has an opening and exposes described metal base end face middle section, and forms a reflector, and exposes described pin outer end and described wire welding area; At least one luminescence chip is incorporated into the metal base end face in the described reflector, and electrically connects described wire welding area by a plurality of bonding wires; And lens, encapsulate described plastic casing.
Above-mentioned package structure for LED, its characteristics are that described metal base end face has a platform, is arranged in described reflector, and described luminescence chip is positioned on the described platform.
Above-mentioned package structure for LED, its characteristics are, described metal base periphery evagination one extension.
Above-mentioned package structure for LED, its characteristics are, described pin has a continuous interior pin and an outer pin, pin has a kink in described, make it form terminal higher bending stratum, and described wire welding area is positioned on the described pin, and described outer pin is then for being connected with external circuit.
Above-mentioned package structure for LED, its characteristics are that the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
Above-mentioned package structure for LED, its characteristics are that the pin of described lead frame and the quantity of described wire welding area are 4.
Above-mentioned package structure for LED, its characteristics are that described plastic casing periphery has a higher side wall.
Above-mentioned package structure for LED, its characteristics are to have the junction surface that highly is lower than described side wall in the described side wall.
Above-mentioned package structure for LED, its characteristics are that described plastic casing is by the PPA material.
Above-mentioned package structure for LED, its characteristics are that described lens are formed by a laser material.
Above-mentioned package structure for LED, its characteristics are that described lens are formed by a resin that contains a laser material.
Above-mentioned package structure for LED, its characteristics are, also comprise an interior glue and are covered in described reflector and described wire welding area.
Above-mentioned package structure for LED, its characteristics are that described interior glue contains a laser material.
Above-mentioned package structure for LED, its characteristics are that described interior glue is a laser material.
The present invention also provides a kind of LED encapsulation method, it is characterized in that, comprise following steps: step 41, to imbed shoot mode, the a plurality of plastic casings of injection molding are on a plurality of lead frames of a support, described plastic casing coats a metal base respectively, and forms a reflector on the end face that described metal base exposes, and exposes a plurality of wire welding areas of described lead frame; Step 42 engages the described metal base end face of at least one luminescence chip in described reflector respectively; Step 43 electrically connects described luminescence chip and described wire welding area with a plurality of bonding wires; And step 44, encapsulate described plastic cement crystal cup.
Above-mentioned LED encapsulation method, its characteristics are, also comprise the step that a punching press cuts described support, to separate the described lead frame of having finished encapsulation.
Above-mentioned LED encapsulation method, its characteristics are that described metal base end face has a platform, is arranged in described reflector, and described luminescence chip is positioned on the described platform.
Above-mentioned LED encapsulation method, its characteristics are, described metal base periphery evagination one extension.
Above-mentioned LED encapsulation method, its characteristics are, the higher side wall of described plastic casing periphery injection molding.
Above-mentioned LED encapsulation method, its characteristics are that described lead frame has a plurality of pins, pin has a kink in described, make it form terminal higher bending stratum, and described wire welding area is positioned on the described pin, described outer pin then confession is connected with external circuit.
Above-mentioned LED encapsulation method, its characteristics are that the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
Above-mentioned LED encapsulation method, its characteristics are that described encapsulation step is covered on the described plastic casing with a resin material.
Above-mentioned LED encapsulation method, its characteristics are that described resin material contains a laser material.
Above-mentioned LED encapsulation method, its characteristics are that described encapsulation step is covered on the described plastic casing with a laser material.
Above-mentioned LED encapsulation method, its characteristics are that described encapsulation step comprises the step that is covered in described reflector and described wire welding area with an interior glue.
Above-mentioned LED encapsulation method, its characteristics be, also comprise with a resin material be covered in described in step on the glue.
Above-mentioned LED encapsulation method, its characteristics are, also comprise the step that is incorporated into not dried described resin material with lens.
Above-mentioned LED encapsulation method, its characteristics are, also comprise following steps: the mould grain with a groove is provided, injects a resin material in the described groove; With encapsulating the described plastic casing of described interior glue, fit in downwards in the groove of described mould grain; And after treating that described resin material has hardened, with the described plastic casing demoulding.
The present invention also provides a kind of lead frame of light-emitting diode, its characteristics are, comprise a plurality of pins, described pin comprises a continuous interior pin and an outer pin, pin is for electrically connecting with a luminescence chip in described, and it has a kink, makes it form terminal higher bending stratum, and described outer pin is then for being connected with external circuit.
The lead frame of above-mentioned light-emitting diode, its characteristics are that the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
The lead frame of above-mentioned light-emitting diode, its characteristics are that described pin number is 4.
The lead frame of above-mentioned light-emitting diode, its characteristics are to have an open-work on the described interior pin.
Effect of the present invention is to improve the heat-sinking capability and the light output efficiency of encapsulating structure, also can reach the full-color effect of colour mixture for the encapsulation of multicore sheet.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the package structure for LED of prior art;
Fig. 2 is another package structure for LED of prior art;
Fig. 3 A is the schematic top plan view of the present invention's first preferred embodiment;
Fig. 3 B is the cross-sectional schematic along A-A hatching line among Fig. 3 A;
Fig. 3 C is the cross-sectional schematic along B-B hatching line among Fig. 3 A;
Fig. 3 D is the elevational schematic view of the present invention's first preferred embodiment;
Fig. 3 E cooperates the upward view of support for the lead frame of the present invention's first preferred embodiment;
Fig. 4 is the cross-sectional schematic of the present invention's second preferred embodiment;
Fig. 5 is the cross-sectional schematic of the present invention's the 3rd preferred embodiment;
Fig. 6 A-6C is the encapsulation schematic flow sheet of the present invention's the 4th preferred embodiment;
Fig. 7 A-7B is the encapsulation schematic flow sheet of the present invention's the 5th preferred embodiment;
Fig. 8 A-8C is light scatter of the present invention and thermal energy conduction schematic diagram;
Fig. 9 A-9B is the multichip packaging structure schematic diagram of the present invention's the 6th preferred embodiment;
Figure 10 A-10B is the encapsulation schematic flow sheet of the present invention's the 7th preferred embodiment; And
Figure 11 is the main flow chart of LED encapsulation method provided by the present invention.
Wherein, Reference numeral:
91,92,93,94-pin
The 00-substrate, 01-insulating barrier, 02-chip, 03-bonding wire, 04-resin
05-draws brush layer in the surface, and 06,07-surface copper layer, the 08-blind hole
The 10-plastic casing, 11-lead frame, 12-metal derby, 13-luminescence chip
The 14-bonding wire, 15-lens, 16-reflector, 17-perforation
The 20-plastic casing, 201-side wall, 202-junction surface
The 21-lead frame, 210,211,212, the 213-wire welding area
The 22-metal base, 220-platform, 221-extension
The 23-reflector, 24-luminescence chip, 25-bonding wire
The 26-support, the 260-lead frame
Pin in the 261-pin, 262-, the outer pin of 263-
The 264-open-work, the 265-kink
The 33-resin, glue in the 34-laser material, 35-
36-mould grain, the 360-groove
The 38-lens
Embodiment
See also Fig. 3 A-3D,, formed with lens 38 by plastic casing 20, lead frame 21, metal base 22, luminescence chip 24 for the package structure for LED that the present invention's first preferred embodiment is provided.
Metal base 22 in order to heat radiation is a pan, and its central authorities have an outstanding platform 220, and periphery then has the extension 221 of evagination.
Lead frame 21 has four pins 91,92,93,94, has independently wire welding area 210,211,212,213 respectively around platform 220, shown in the dotted line of Fig. 3 A.
In this example, plastic casing 20 adopts the shaping rear surface to have the PPA material (Polyphthalamide of 90% reflectivity, poly-phthalate ester), emission technology is imbedded in utilization, make plastic casing 20 direct coated wire frame 21 and metal base 22 when penetrating, and above the platform 220 of metal base 22, have a perforate, and form the reflector 23 of annular; With luminescence chip 24 then above metal base 22, and luminescence chip 24 given bonding wire with the wire welding area 210,211,212,213 of lead frame 21 be connected, can finish encapsulation in conjunction with lens 38.Plastic casing 20 peripheries form higher side wall 201, as Fig. 3 B, 3C, then are lower junction surface 202 in the side wall 201, can be for combining with lens 38; The various forms of encapsulation will be introduced in follow-up Fig. 4-7B in detail.
From Fig. 3 B, 3C, can find out metal base 22 because the outstanding extension 221 of periphery penetrates design in conjunction with imbedding of plastic casing 20, and the two can be combined closely, improve the reliability of product; And, because need not in encapsulation manufacturing process, to go again then metal base 22 (as the prior art among Fig. 1), also increase productivity, reduce the variability in the manufacturing process.Secondly, then on metal base 22, heat energy directly disperses away by metal base 22 conduction the luminescence chip 24 that will generate heat, as long as contact a heat-radiating substrate again in metal base 22 bottoms, can reach the good thermal energy conduction and the effect of heat radiation.
See also Fig. 3 E, the lead frame 260 of package structure for LED provided by the present invention, on a support 26, lead frame 260 has four pins 261 among the figure in the encapsulation anteposition, and every pin 261 comprises continuous interior pin 262 and outer pin 263.Each outer pin 263 is rectangular, for being connected with external circuit; Pin 262 is banded in each, which is provided with open-work 264, can increase the bond strength after plastic cement penetrates.Especially, interior pin has a kink 265, makes it form terminal higher bending stratum; This part needs metal base 22 to penetrate higher surface, can allow reflector 23 have the bigger degree of depth relatively, can improve the mixed light effect of multiple optical chip like this, the wire welding area of pin 262 more is easy to carry out the bonding wire operation near metal base 22 surfaces in also can making simultaneously.And interior pin 262 terminal ora terminalis become concave arc shape, and the concave arc shape ora terminalis of pin 262 ends is approaching concyclic in all, but vacating space like this, and the reflector 23 in the middle of making can have bigger space to place luminescence chip.Finish plastic cement and penetrate after the operation, four interior pins 262 have regional area to expose out respectively, as the wire welding area (as the wire welding area 210,211,212 and 213 of Fig. 3 A) that combines with the luminescence chip routing.
See also Fig. 4-7B, finish after the bonding wire operation,, different packaging operation modes can be arranged according to different product demands.
The most easy packaged type of semi-finished product that Fig. 4 finishes for bonding wire is to click and enter resin 33 and coating chips 24 and bonding wire 25 structures fully by the top, treat resin 33 sclerosis after, promptly finish encapsulation.In order to improve light output efficiency or to carry out the employed laser material 34 of colour mixture, can be mixed in the resin 33, or directly encapsulate with pure laser material 34.
As Fig. 5, glue 35 on the semi-finished product that bonding wire is finished, putting, but only coat the wire welding area of luminescence chip 24 and bonding wire 25 and lead frame 21, after sclerosis, click and enter resin 33 in the above again and do outer encapsulation; In can being mixed in, laser material 34 in glue 35 or the resin 33, perhaps selects a replacement; During glue 35, can provide the good uniformity that excites in particularly laser material 34 is mixed in.
See also Fig. 6 A-6C, be the encapsulation schematic flow sheet of the present invention's the 4th preferred embodiment, at first finish the interior glue packaging operation among Fig. 5, again resin 33 is clicked and entered earlier in the groove 360 of mould grain 36 (Fig. 6 A); To finish the semi-finished product of bonding wire, the encapsulation of interior glue subsequently, opening fits in mould grain 36 (Fig. 6 B) down; After the sclerosis demoulding, promptly finish encapsulation, and produce the necessary lens 38 of anaclasis (Fig. 6 C).
Fig. 7 A-7B, encapsulation schematic flow sheet for the present invention's the 5th preferred embodiment, as shown in the figure, interior glue 35, resin 33 packaging operations among Fig. 5 have been finished, when difference is that resin 33 is unhardened (Fig. 7 A), another lens 38 are engaged in the top, and resin 33 sclerosis backs are bonding, promptly finish encapsulation (Fig. 7 B).
See also Fig. 8 A-8C, regardless of the form of its last encapsulation, the present invention utilizes formed reflector 23 designs of opening of the platform end face and the plastic casing of metal base, all can reach splendid light output effect.The light that luminescence chip 24 produces, except directly penetrating lens or resin, its side light and because of angle comparatively tilts to reflect back into the light of reflector is the plastic casing by having high reflectance and the platform of metal base, reflects away once again; So, can reduce the loss of light output, and keep bigger light diffusion angle, can not form the problem of point-source of light.
In addition, see also Fig. 9 A-9B, have the lead frame 21 of four pins and four wire welding areas and the metal base 22 of large tracts of land platform, can perhaps provide the encapsulation of multicore sheet in order to encapsulate the luminescence chip of single large tracts of land, many solder joints.Because design is penetrated in imbedding of metal base 22, even encapsulate single large area light emitting chip or multicore sheet, does not all have the problem of the displacement that comes off.And utilize lead frame 21 designs of the present invention, and can connecting for a plurality of luminescence chip bonding wires, three primary colors chip (Fig. 9 B) also can be simultaneously luminous in this encapsulating structure, reaches full-color smooth output effect.
See also Figure 10 A, 10B, package structure for LED according to the foregoing description, the invention provides a kind of light emitter diode seal method, its characteristics are metal base and plastic casing, to imbed on a plurality of lead frames that shoot mode is incorporated into support (Fig. 3 E), and be the main structure body with this support, carry out follow-up LED package operation.
Briefly, light emitter diode seal method provided by the present invention, mainly comprise following steps (as shown in figure 11): step 41 at first, to imbed a plurality of plastic casings of shoot mode injection molding on a plurality of lead frames of a support, each plastic casing coats a metal base respectively, and form a reflector on the end face that metal base exposes, and expose a plurality of wire welding areas of each lead frame; Then step 42 engages the metal base end face of luminescence chip in reflector respectively; Step 43 electrically connects luminescence chip and wire welding area with several bonding wires then; Final step 44 encapsulates each plastic cement crystal cup.
Also can comprise the step that a punching press cuts this support in the practical operation, to separate the lead frame of having finished encapsulation.And the step of encapsulation can have various packaged type shown in Fig. 4-7B; For example encapsulation step also more comprises with glue in one and is covered in the step of reflector and wire welding area, and in finishing after the glue encapsulation, also can carry out following steps: (1) provides the mould grain with a groove, injection one resin material in the groove; (2) will encapsulate in the plastic casing of glue, fit in downwards in the groove of mould grain; And after (3) treat resin material sclerosis, with the plastic casing demoulding.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.

Claims (32)

1, a kind of package structure for LED is characterized in that, comprises:
One metal base;
One lead frame has a plurality of pins, and respectively this pin has a wire welding area respectively, and described wire welding area is located on described metal base top side periphery;
One plastic casing coats described metal base periphery and described lead frame, and it has an opening and exposes described metal base end face middle section, and forms a reflector, and exposes described pin outer end and described wire welding area;
At least one luminescence chip is incorporated into the metal base end face in the described reflector, and electrically connects described wire welding area by a plurality of bonding wires; And
One lens encapsulate described plastic casing.
2, package structure for LED according to claim 1 is characterized in that, described metal base end face has a platform, is arranged in described reflector, and described luminescence chip is positioned on the described platform.
3, package structure for LED according to claim 1 is characterized in that, described metal base periphery evagination one extension.
4, package structure for LED according to claim 1, it is characterized in that, described pin has a continuous interior pin and an outer pin, pin has a kink in described, make it form terminal higher bending stratum, and described wire welding area is positioned on the described pin, and described outer pin is then for being connected with external circuit.
5, package structure for LED according to claim 4 is characterized in that, the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
6, package structure for LED according to claim 1 is characterized in that, the pin of described lead frame and the quantity of described wire welding area are 4.
7, package structure for LED according to claim 1 is characterized in that, described plastic casing periphery has a higher side wall.
8, package structure for LED according to claim 7 is characterized in that, has the junction surface that highly is lower than described side wall in the described side wall.
9, package structure for LED according to claim 1 is characterized in that, described plastic casing is by the PPA material.
10, package structure for LED according to claim 1 is characterized in that, described lens are formed by a laser material.
11, package structure for LED according to claim 1 is characterized in that, described lens are formed by a resin that contains a laser material.
12, package structure for LED according to claim 1 is characterized in that, also comprises an interior glue and is covered in described reflector and described wire welding area.
13, package structure for LED according to claim 12 is characterized in that, described interior glue contains a laser material.
14, package structure for LED according to claim 12 is characterized in that, described interior glue is a laser material.
15, a kind of LED encapsulation method is characterized in that, comprises following steps:
Step 41, to imbed shoot mode, a plurality of plastic casings of injection molding are on a plurality of lead frames of a support, and described plastic casing coats a metal base respectively, and form a reflector on the end face that described metal base exposes, and expose a plurality of wire welding areas of described lead frame;
Step 42 engages the described metal base end face of at least one luminescence chip in described reflector respectively;
Step 43 electrically connects described luminescence chip and described wire welding area with a plurality of bonding wires; And
Step 44 encapsulates described plastic cement crystal cup.
16, LED encapsulation method according to claim 15 is characterized in that, also comprises the step that a punching press cuts described support, to separate the described lead frame of having finished encapsulation.
17, LED encapsulation method according to claim 15 is characterized in that, described metal base end face has a platform, is arranged in described reflector, and described luminescence chip is positioned on the described platform.
18, LED encapsulation method according to claim 15 is characterized in that, described metal base periphery evagination one extension.
19, LED encapsulation method according to claim 15 is characterized in that, the higher side wall of described plastic casing periphery injection molding.
20, LED encapsulation method according to claim 15, it is characterized in that, described lead frame has a plurality of pins, pin has a kink in described, make it form terminal higher bending stratum, and described wire welding area is positioned on the described pin, and described outer pin is then for being connected with external circuit.
21, LED encapsulation method according to claim 20 is characterized in that, the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
22, LED encapsulation method according to claim 15 is characterized in that, described encapsulation step is covered on the described plastic casing with a resin material.
23, LED encapsulation method according to claim 22 is characterized in that, described resin material contains a laser material.
24, LED encapsulation method according to claim 15 is characterized in that, described encapsulation step is covered on the described plastic casing with a laser material.
25, LED encapsulation method according to claim 15 is characterized in that, described encapsulation step comprises the step that is covered in described reflector and described wire welding area with an interior glue.
26, LED encapsulation method according to claim 25 is characterized in that, also comprise with a resin material be covered in described in step on the glue.
27, LED encapsulation method according to claim 26 is characterized in that, also comprises the step that is incorporated into not dried described resin material with lens.
28, LED encapsulation method according to claim 25 is characterized in that, also comprises following steps:
Mould grain with a groove is provided, injects a resin material in the described groove;
With encapsulating the described plastic casing of described interior glue, fit in downwards in the groove of described mould grain; And
After treating that described resin material has hardened, with the described plastic casing demoulding.
29, a kind of lead frame of light-emitting diode, it is characterized in that, comprise a plurality of pins, described pin comprises a continuous interior pin and an outer pin, pin is for electrically connecting with a luminescence chip in described, and it has a kink, makes it form terminal higher bending stratum, and described outer pin is then for being connected with external circuit.
30, the lead frame of light-emitting diode according to claim 29 is characterized in that, the terminal ora terminalis of described interior pin becomes concave arc shape, and the concave arc shape ora terminalis of pin end is concyclic in described.
31, the lead frame of light-emitting diode according to claim 29 is characterized in that, described pin number is 4.
32, the lead frame of light-emitting diode according to claim 29 is characterized in that, has an open-work on the described interior pin.
CNA2004100336729A 2004-04-15 2004-04-15 Packaging structure of light emitting diode and its packaging method Pending CN1684278A (en)

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WO2007059657A1 (en) * 2005-11-28 2007-05-31 Jen-Shyan Chen Package structure of light-emitting diode
WO2009052702A1 (en) * 2007-10-15 2009-04-30 Foshan Nationstar Optoelectronics Co., Ltd A structure of heat dissipation substrate for power led and a device manufactured by it
CN101471411B (en) * 2007-12-26 2010-06-23 特新光电科技股份有限公司 Method for producing LED stent
CN101494217B (en) * 2008-01-23 2010-09-29 一诠精密工业股份有限公司 Conductor frame
CN101931040A (en) * 2010-07-20 2010-12-29 嘉兴嘉尼光电科技有限公司 Packaging of LED area light source
CN102130277A (en) * 2010-12-31 2011-07-20 昆山琉明光电有限公司 Light-emitting diode package
US8030762B2 (en) 2006-04-05 2011-10-04 Samsung Led Co., Ltd. Light emitting diode package having anodized insulation layer and fabrication method therefor
CN102447043A (en) * 2010-09-30 2012-05-09 亚世达科技股份有限公司 Light emitting diode package structure
CN102447034A (en) * 2010-09-30 2012-05-09 展晶科技(深圳)有限公司 LED (light emitting diode) packaging structure and manufacturing method thereof
CN102593271A (en) * 2011-01-14 2012-07-18 九介企业股份有限公司 Luminous diode sealing structure and forming method for groove type sealing lead frame thereof
CN102651444A (en) * 2011-02-25 2012-08-29 东贝光电科技股份有限公司 Light emitting diode packaging structure
CN102738373A (en) * 2011-04-11 2012-10-17 展晶科技(深圳)有限公司 Encapsulation structure of a light-emitting diode and method for manufacturing the same
CN102751423A (en) * 2011-04-21 2012-10-24 三星Led株式会社 Light emitting device package and method of manufacturing the same
US8368085B2 (en) 2009-12-30 2013-02-05 Advanced Optoelectronic Technology, Inc. Semiconductor package
US8378358B2 (en) 2009-02-18 2013-02-19 Everlight Electronics Co., Ltd. Light emitting device
US8405105B2 (en) 2009-02-18 2013-03-26 Everlight Electronics Co., Ltd. Light emitting device
US8405096B2 (en) 2009-10-27 2013-03-26 Advanced Optoelectronic Technology, Inc. LED package structure
US8772802B2 (en) 2009-02-18 2014-07-08 Everlight Electronics Co., Ltd. Light emitting device with transparent plate
CN103928593A (en) * 2009-03-10 2014-07-16 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic Semiconductor Component
CN104037316B (en) * 2014-06-19 2017-06-20 鸿利智汇集团股份有限公司 A kind of LED inorganic encapsulateds support and its method for packing
CN107026229A (en) * 2016-02-01 2017-08-08 日月光半导体制造股份有限公司 Semiconductor encapsulation device
CN108878619A (en) * 2017-05-15 2018-11-23 巨贸精密工业股份有限公司 Light source perceptron lead frame matrix structure
CN112467010A (en) * 2020-11-13 2021-03-09 中山市聚明星电子有限公司 Diode packaging process and packaged diode

Cited By (34)

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WO2007059657A1 (en) * 2005-11-28 2007-05-31 Jen-Shyan Chen Package structure of light-emitting diode
US7786490B2 (en) 2005-11-28 2010-08-31 Neobule Technologies, Inc. Multi-chip module single package structure for semiconductor
US8030762B2 (en) 2006-04-05 2011-10-04 Samsung Led Co., Ltd. Light emitting diode package having anodized insulation layer and fabrication method therefor
US8304279B2 (en) 2006-04-05 2012-11-06 Samsung Electronics Co., Ltd. Light emitting diode package having anodized insulation layer and fabrication method therefor
CN101663768B (en) * 2007-10-15 2012-12-26 佛山市国星光电股份有限公司 A structure of heat dissipation substrate for power LED and a device manufactured by it
US8174832B2 (en) 2007-10-15 2012-05-08 Foshan Nationstar Optoelectronics Co., Ltd. Structure of heat dissipation substrate for power light emitting diode (LED) and a device using same
WO2009052702A1 (en) * 2007-10-15 2009-04-30 Foshan Nationstar Optoelectronics Co., Ltd A structure of heat dissipation substrate for power led and a device manufactured by it
CN101471411B (en) * 2007-12-26 2010-06-23 特新光电科技股份有限公司 Method for producing LED stent
CN101494217B (en) * 2008-01-23 2010-09-29 一诠精密工业股份有限公司 Conductor frame
US8772802B2 (en) 2009-02-18 2014-07-08 Everlight Electronics Co., Ltd. Light emitting device with transparent plate
US8405105B2 (en) 2009-02-18 2013-03-26 Everlight Electronics Co., Ltd. Light emitting device
US8378358B2 (en) 2009-02-18 2013-02-19 Everlight Electronics Co., Ltd. Light emitting device
CN103928593A (en) * 2009-03-10 2014-07-16 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic Semiconductor Component
US8405096B2 (en) 2009-10-27 2013-03-26 Advanced Optoelectronic Technology, Inc. LED package structure
US8368085B2 (en) 2009-12-30 2013-02-05 Advanced Optoelectronic Technology, Inc. Semiconductor package
CN102117876B (en) * 2009-12-30 2013-02-27 展晶科技(深圳)有限公司 Semiconductor packaging structure
CN101931040A (en) * 2010-07-20 2010-12-29 嘉兴嘉尼光电科技有限公司 Packaging of LED area light source
CN102447034B (en) * 2010-09-30 2014-05-07 展晶科技(深圳)有限公司 LED (light emitting diode) packaging structure and manufacturing method thereof
CN102447034A (en) * 2010-09-30 2012-05-09 展晶科技(深圳)有限公司 LED (light emitting diode) packaging structure and manufacturing method thereof
CN102447043A (en) * 2010-09-30 2012-05-09 亚世达科技股份有限公司 Light emitting diode package structure
CN102130277A (en) * 2010-12-31 2011-07-20 昆山琉明光电有限公司 Light-emitting diode package
CN102130277B (en) * 2010-12-31 2013-06-05 昆山琉明光电有限公司 Light-emitting diode package
CN102593271A (en) * 2011-01-14 2012-07-18 九介企业股份有限公司 Luminous diode sealing structure and forming method for groove type sealing lead frame thereof
CN102651444A (en) * 2011-02-25 2012-08-29 东贝光电科技股份有限公司 Light emitting diode packaging structure
CN102738373A (en) * 2011-04-11 2012-10-17 展晶科技(深圳)有限公司 Encapsulation structure of a light-emitting diode and method for manufacturing the same
CN102738373B (en) * 2011-04-11 2014-11-05 展晶科技(深圳)有限公司 Encapsulation structure of a light-emitting diode and method for manufacturing the same
CN102751423A (en) * 2011-04-21 2012-10-24 三星Led株式会社 Light emitting device package and method of manufacturing the same
CN104037316B (en) * 2014-06-19 2017-06-20 鸿利智汇集团股份有限公司 A kind of LED inorganic encapsulateds support and its method for packing
CN107026229A (en) * 2016-02-01 2017-08-08 日月光半导体制造股份有限公司 Semiconductor encapsulation device
US10381294B2 (en) 2016-02-01 2019-08-13 Advanced Semiconductor Engineering, Inc. Semiconductor package device
CN107026229B (en) * 2016-02-01 2020-11-06 日月光半导体制造股份有限公司 Semiconductor packaging device
CN108878619A (en) * 2017-05-15 2018-11-23 巨贸精密工业股份有限公司 Light source perceptron lead frame matrix structure
CN112467010A (en) * 2020-11-13 2021-03-09 中山市聚明星电子有限公司 Diode packaging process and packaged diode
CN112467010B (en) * 2020-11-13 2022-03-22 中山市聚明星电子有限公司 Diode packaging process and packaged diode

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