CN104037316B - A kind of LED inorganic encapsulateds support and its method for packing - Google Patents

A kind of LED inorganic encapsulateds support and its method for packing Download PDF

Info

Publication number
CN104037316B
CN104037316B CN201410273557.2A CN201410273557A CN104037316B CN 104037316 B CN104037316 B CN 104037316B CN 201410273557 A CN201410273557 A CN 201410273557A CN 104037316 B CN104037316 B CN 104037316B
Authority
CN
China
Prior art keywords
glass lens
rack body
led
metal layer
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410273557.2A
Other languages
Chinese (zh)
Other versions
CN104037316A (en
Inventor
何永泰
乔翀
李坤锥
李恒彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongli Zhihui Group Co Ltd
Original Assignee
Hongli Zhihui Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongli Zhihui Group Co Ltd filed Critical Hongli Zhihui Group Co Ltd
Priority to CN201410273557.2A priority Critical patent/CN104037316B/en
Publication of CN104037316A publication Critical patent/CN104037316A/en
Application granted granted Critical
Publication of CN104037316B publication Critical patent/CN104037316B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Abstract

A kind of LED inorganic encapsulateds support and its method for packing,(1)Die bond, bonding wire are carried out to LED chip;(2)Using steel mesh typography toward painting tin cream on the second step of rack body;(3)Rack body is preheated, tin cream is unlikely to melt, and original normal temperature lower carriage body first step expands into gap cooperation with the interference fit of glass lens;(4)Glass lens is arranged on the mould being adapted to rack body;(5)The rack body after preheating is taken out to be combined with glass lens;(6)The LED support for installing lens crosses a Reflow Soldering.Due to the thermal coefficient of expansion of the thermal coefficient of expansion more than glass lens of second metal layer material therefor on First Transition face, the size that the size that first order step opens will open more than glass lens, so that glass lens and first step during work with synthesizing interference fits, extrusion stress is released, the fatigue life of material is improve.

Description

A kind of LED inorganic encapsulateds support and its method for packing
Technical field
The present invention relates to LED support, especially a kind of LED inorganic encapsulateds support and its method for packing.
Background technology
LED is light emitting diode, is a kind of solid semiconductor luminescent device.With the development of LED technologies, LED's Encapsulation wave band gradually develops toward near ultraviolet even deep ultraviolet direction, and power also develops toward high-power aspect.But use tradition Organosilicon glue material encapsulation, such as, using epoxy encapsulation direct insertion LED more, using silicones adopting surface mounted LED more Or silica gel packaging, and such organosilicon material is under long-time service condition, because the influence of the factors such as water, light, heat is easily lost Effect, causes the sharp-decay of luminous flux, the radiation flux of device etc., even results in component failure.It is integrated for great power LED For light source, due to a variety of causes, such as chip heating, situations such as radiating is not enough, cause device surface temperature too high, and then cause Component failure.In order to avoid the defect that organic packages bring, LED inorganic encapsulated technologies are gradually risen, such as Chinese patent, publication number It is a kind of 103325922 LED method for packing, it discloses comprising the following steps(1)Pretreatment;Including to glass The surface of cover plate, expansion alloy and substrate lands is pre-processed(2)Welding(a)Metal and ceramic welding, first will be swollen Swollen alloy is placed in fixture with substrate mounting, and ceramic substrate connects negative electrode, and expansion alloy connects anode, using high-frequency induction heating, Fixture is placed in alternating magnetic field, regulating frequency controls expansion alloy temperature at 200 ~ 300 DEG C;Apply the straight of 700 ~ 900V Stream voltage, is maintained after temperature, 15 ~ 30min of voltage, and DC voltage is stopped, and ceramic substrate is welded on expansion alloy Together(b)Metal and glass solder, glass cover-plate is moved on on expansion alloy, and expansion alloy connects anode, and glass cover-plate connects the moon Pole, fixture is placed in alternating magnetic field, applies the DC voltage of 600 ~ 900v, after maintenance temperature, 15 ~ 50min of voltage, DC voltage is stopped, welding is completed.Due to LED support, operationally temperature can be raised, and LED support and glass lens can Expand with heat and contract with cold phenomenon, because glass lens is different from the material of rack body, therefore the flexible amplitude of the two is different, weldering Place is met due to stress caused by thermal expansion coefficient difference, increases the fatigue of weld layer, make the big discounting of service life of LED support Button.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of LED inorganic encapsulateds support and its method for packing, overcome existing Have between inorganic packaged glass lens and support because thermal expansion coefficient difference causes stress produced problem.
In order to solve the above technical problems, one of technical scheme is:A kind of LED inorganic encapsulateds support, including branch Frame body and the glass lens covered with the rack body, the rack body are provided with the depression for housing LED chip, The top inward flange of the rack body is provided around the first step that the depression is set, and the top of the rack body is in institute State first step periphery and be provided with second step, second step is higher than first step, the is formed between second step and first step One transition face, forms the second transition face between rack body top and second step, the edge of the glass lens is arranged on institute State on first step, the side edge of the glass lens is provided with the first metal layer, and the First Transition face is provided with the second gold medal Category layer, the second metal layer is corresponding with the side of the first metal layer, and the first metal layer was with second metal layer under normal temperature It is full of cooperation;Second transition face is provided with the 3rd metal level, the 3rd metal level, second step and the first metal layer Top surrounds and tin cream is filled with the groove around the first step, the groove jointly.First Transition face and glass lens Interference fit, can produce the extrusion stress between metal level at normal temperatures, so as to strengthen air-tightness.Because interference fit is grasped In suitable scope, when rack body is heated, the expansion of its size coordinates for gap, so as to facilitate the installation of glass lens; After encapsulation is finished, operationally ultraviolet LED lights and produces heat, whole device is heated, due to the second gold medal on First Transition face Belong to the thermal coefficient of expansion of the thermal coefficient of expansion more than glass lens of layer material therefor, the size that first order step opens will be more than The size that glass lens opens so that glass lens and first step during work with interference fits are synthesized, release Extrusion stress, improves the fatigue life of material.Tin paste layer is placed in groove, tin cream and the second transition face, second step with And the contacts side surfaces of glass lens, it is ensured that three welded seals in face in reflow process, while tin cream usage amount or many Or seal request is can reach less, so as to expand the admissible error of tin cream usage amount, the technology for reducing brush tin cream technique will Ask, improve economic benefit.Due to still having the coat of metal at the contacts side surfaces of First Transition face and glass lens, in Reflow Soldering During gap coordinate and allow tin cream to be infiltrated toward in gap, filled up the microcosmic out-of-flatness that glass lens side is likely to occur, So as to improve the reliability of welding.Tin paste layer remains the free degree of upper surface, it is allowed to which tin cream heat expansion at different temperatures is cold Contracting, so as to release weld due to stress caused by thermal expansion coefficient difference, improves the fatigue life of weld layer.
Used as improvement, the second step is provided with the 3rd metal level.
Used as improvement, the first metal layer, second metal layer and the 3rd metal level are silver coating, Gold plated Layer or alloy Layer.
Used as improvement, the glass lens is square.
Used as improvement, the glass lens is provided with hemisphere jut.
Used as improvement, the rack body material is aluminium, copper or ceramics.This programme is using metal or ceramic material as branch Frame body, can substantially reduce thermal resistance, improve the service life of LED, and ceramics are more suitable for setting for thermoelectricity separation as insulating materials Meter.
Used as improvement, the depression is square.
In order to solve the above technical problems, the two of technical scheme are:A kind of LED as claimed in claim 1 is inorganic Package support method for packing, comprises the following steps:
(1)Die bond, bonding wire are carried out to LED chip in the depression of LED support body;
(2)Using steel mesh typography toward painting tin cream on the second step of rack body;
(3)Rack body is preheated, preheating temperature is 120 DEG C to 150 DEG C, it is ensured that tin cream is unlikely to melt at a temperature of this Change, and original normal temperature lower carriage body first step expands into gap cooperation with the interference fit of glass lens;
(4)Glass lens is arranged on the mould being adapted to rack body;
(5)Take out the rack body of preheating and coordinate it with glass lens;
(6)The LED support for installing lens crosses a Reflow Soldering.
As improvement, the step(5)Specific method:The rack body after preheating is taken out, 180 ° of upset is buckled in glass On lens, rack body is then overturn 180 ° together with glass lens again, take out mould.
The beneficial effect brought compared with prior art of the present invention is:
Under normal temperature, glass transparent is interference fit with rack body, can produce the extrusion stress between metal level, so that Enhancing air-tightness;
Because interference fit is rested in suitable scope, when rack body is heated, the expansion of its size coordinates for gap, So as to facilitate the installation of glass lens;
During LED operation, because the thermal coefficient of expansion of second metal layer material therefor on First Transition face is more than glass lens Thermal coefficient of expansion, the size that the size that first order step opens will open more than glass lens so that work when glass Glass lens, with interference fits are synthesized, release extrusion stress with first step, improve the fatigue life of material.
Brief description of the drawings
Fig. 1 is the utility model front view.
Fig. 2 is the utility model top view.
Fig. 3 is the utility model decomposition view.
Fig. 4 is another form of glass lens schematic diagram.
Specific embodiment
With reference to Figure of description, the invention will be further described.
As shown in Figures 1 to 3, a kind of LED inorganic encapsulateds support, including rack body 1 and covered with the rack body 1 Glass lens 4.The glass lens 4 is square, and the glass lens 4 is provided with hemisphere jut, lens is had certain matching somebody with somebody Light action, in addition, as shown in figure 4, the glass lens 4 can also be simple glass plate.As shown in figure 3, on the rack body 1 The square depression 3 for housing LED chip is provided with, the top inward flange of the rack body 1 is provided around the depression and sets First step 6, the top of the rack body 1 is provided with second step 7 in the periphery of the first step 6, and second step 7 is higher than First step 6, forms First Transition face, between the top of rack body 1 and second step 7 between second step 7 and first step 6 The second transition face is formed, the edge of the glass lens 4 is arranged on the first step 6.The side side of the glass lens 4 Edge is provided with the first metal layer 10, and the First Transition face is provided with second metal layer 8, the metal of the second metal layer 8 and first The side correspondence of layer 10, and the first metal layer 10 and second metal layer 8 are interference fit under normal temperature;Set on the second step 7 There is the 3rd metal level 9, second transition face is provided with the 3rd metal level 9, the first metal layer 10, the and of second metal layer 8 3rd metal level 9 is silver coating, Gold plated Layer or alloy-layer;3rd metal level 9, second step 7 and the first metal layer 10 top surrounds and tin cream is filled with the groove 5 around the first step 6, the groove 5 jointly.
The method for packing of LED inorganic encapsulated supports:
(1)Die bond, bonding wire are carried out to LED chip in the depression of LED support body 1;
(2)Using steel mesh typography toward painting tin cream on the second step 7 of rack body 1;
(3)Rack body 1 is preheated, preheating temperature is 120 DEG C to 150 DEG C, it is ensured that tin cream is unlikely at a temperature of this Melt, and the original first step 6 of normal temperature lower carriage body 1 expands into gap cooperation with the interference fit of glass lens 4;
(4)Glass lens 4 is arranged on the mould being adapted to rack body 1;
(5)Take out preheating after rack body 1, upset 180 ° be buckled on glass lens 4, then by rack body 1 together with Glass lens 4 overturns 180 ° again, takes out mould;
(6)The LED support for installing lens crosses a Reflow Soldering.
This programme, as rack body 1, can substantially reduce thermal resistance using metal or ceramic material, improve the use of LED Life-span, ceramics are more suitable for the design of thermoelectricity separation as insulating materials.Interference is matched somebody with somebody at normal temperatures with glass lens 4 in First Transition face Close, the extrusion stress between metal level can be produced, so as to strengthen air-tightness.Because interference fit rests in suitable scope Interior, when rack body 1 is heated, the expansion of its size coordinates for gap, so as to facilitate the installation of glass lens 4;After encapsulation is finished, Operationally ultraviolet LED lights and produces heat, whole device is heated, due to material used by second metal layer 8 on First Transition face The thermal coefficient of expansion of material is more than the thermal coefficient of expansion of glass lens 4, and the size that first order step opens will be more than glass lens 4 The size opened so that glass lens 4 and first step 6 during work with interference fits are synthesized, releasing extruding should Power, improves the fatigue life of material.Tin paste layer is placed in groove, tin cream and the second transition face, second step 7 and glass The contacts side surfaces of lens 4, it is ensured that three welded seals in face in reflow process, while tin cream usage amount is more or less equal Seal request is can reach, so as to expand the admissible error of tin cream usage amount, the technical requirements of brush tin cream technique is reduced, improved Economic benefit.Due to still having the coat of metal at the contacts side surfaces of First Transition face and glass lens 4, in reflow process Gap coordinate and allow tin cream to be infiltrated toward in gap, the microcosmic out-of-flatness that the side of glass lens 4 is likely to occur has been filled up, so as to carry The reliability of height welding.Tin paste layer remains the free degree of upper surface, it is allowed to tin cream expanding with heat and contract with cold at different temperatures, so that Weld is released due to stress caused by thermal expansion coefficient difference, the fatigue life of weld layer is improved.

Claims (9)

1. a kind of LED inorganic encapsulateds support, including rack body and the glass lens covered with the rack body, its feature exist In:The rack body is provided with the depression for housing LED chip, and the top inward flange of the rack body is provided around institute The first step that depression is set is stated, the top of the rack body is provided with second step, second in the first step periphery Rank is higher than first step, forms First Transition face between second step and first step, rack body top and second step it Between form the second transition face, the edge of the glass lens is arranged on the first step, the side side of the glass lens Edge is provided with the first metal layer, and the First Transition face is provided with second metal layer, the second metal layer and the first metal layer Side correspondence, and the first metal layer and second metal layer are interference fit under normal temperature;Second transition face is provided with the 3rd gold medal Category layer, the top of the 3rd metal level, second step and the first metal layer surrounds around the recessed of the first step jointly Tin cream is filled with groove, the groove.
2. a kind of LED inorganic encapsulateds support according to claim 1, it is characterised in that:The second step is provided with Three metal levels.
3. a kind of LED inorganic encapsulateds support according to claim 1, it is characterised in that:The first metal layer, the second gold medal Category layer and the 3rd metal level are silver coating, Gold plated Layer or alloy-layer.
4. a kind of LED inorganic encapsulateds support according to claim 1, it is characterised in that:The glass lens is square.
5. a kind of LED inorganic encapsulateds support according to claim 4, it is characterised in that:The glass lens is provided with ball Shape is raised.
6. a kind of LED inorganic encapsulateds support according to claim 1, it is characterised in that:The rack body material be aluminium, Copper or ceramics.
7. a kind of LED inorganic encapsulateds support according to claim 1, it is characterised in that:The depression is square.
8. a kind of LED inorganic encapsulateds support method for packing as claimed in claim 1, it is characterised in that comprise the following steps:
(1)Die bond, bonding wire are carried out to LED chip in the depression of LED support body;
(2)Using steel mesh typography toward painting tin cream on the second step of rack body;
(3)Rack body is preheated, preheating temperature is 120 DEG C to 150 DEG C, it is ensured that tin cream is unlikely to melt at a temperature of this, And original normal temperature lower carriage body first step expands into gap cooperation with the interference fit of glass lens;
(4)Glass lens is arranged on the mould being adapted to rack body;
(5)Take out the rack body of preheating and coordinate it with glass lens;
(6)The LED support for installing lens crosses a Reflow Soldering.
9. LED inorganic encapsulateds support method for packing according to claim 8, it is characterised in that:The step(5)It is specific Method:Take out preheating after rack body, upset 180 ° be buckled on glass lens, then by rack body together with glass lens again 180 ° of upset, takes out mould.
CN201410273557.2A 2014-06-19 2014-06-19 A kind of LED inorganic encapsulateds support and its method for packing Active CN104037316B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410273557.2A CN104037316B (en) 2014-06-19 2014-06-19 A kind of LED inorganic encapsulateds support and its method for packing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410273557.2A CN104037316B (en) 2014-06-19 2014-06-19 A kind of LED inorganic encapsulateds support and its method for packing

Publications (2)

Publication Number Publication Date
CN104037316A CN104037316A (en) 2014-09-10
CN104037316B true CN104037316B (en) 2017-06-20

Family

ID=51468011

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410273557.2A Active CN104037316B (en) 2014-06-19 2014-06-19 A kind of LED inorganic encapsulateds support and its method for packing

Country Status (1)

Country Link
CN (1) CN104037316B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895778A (en) * 2014-11-30 2016-08-24 浙江英特来光电科技有限公司 Entire board package ceramic LED lamp filament and processing method thereof
CN105428472A (en) * 2015-11-18 2016-03-23 佛山市南海区联合广东新光源产业创新中心 Manufacturing method for ultraviolet LED device
CN105280783A (en) * 2015-11-18 2016-01-27 佛山市南海区联合广东新光源产业创新中心 An ultraviolet led device
CN106601889A (en) * 2016-05-17 2017-04-26 陈秋胜 Window-airtight silica gel free packaging structure of semiconductor light emitting chip
CN106449542B (en) * 2016-08-26 2019-08-23 深圳市五矿发光材料有限公司 A kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form
KR102641336B1 (en) 2017-09-05 2024-02-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device package
CN109509824A (en) * 2018-12-13 2019-03-22 佛山市国星光电股份有限公司 LED component and lamp group array
CN109713092A (en) * 2018-12-29 2019-05-03 中山市奥利安光电科技有限公司 The encapsulating structure of UV LED and the packaging method of UV LED
CN112490338A (en) * 2020-11-26 2021-03-12 中芯先进半导体(深圳)有限公司 Method for mounting lens through glue-free eutectic and LED packaging structure
CN112490339B (en) * 2020-12-10 2022-06-03 鸿利智汇集团股份有限公司 Inorganic packaging method for LED
CN113113524A (en) * 2021-03-30 2021-07-13 佛山市国星光电股份有限公司 Deep ultraviolet LED device and manufacturing method thereof
CN114335297A (en) * 2021-12-28 2022-04-12 北京大学东莞光电研究院 Silk-screen packaging method for LED lens

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1521863A (en) * 2003-02-10 2004-08-18 光磊科技股份有限公司 Light-emitting diode packaging device
CN1684278A (en) * 2004-04-15 2005-10-19 联欣光电股份有限公司 Packaging structure of light emitting diode and its packaging method
JP2005347564A (en) * 2004-06-03 2005-12-15 Nec Compound Semiconductor Devices Ltd Airtight seal package
CN201274297Y (en) * 2008-09-23 2009-07-15 王海军 Large power LED encapsulation structure capable of enhancing brightness
CN201307605Y (en) * 2008-12-05 2009-09-09 弘凯光电(深圳)有限公司 LED packaging structure
CN102244178A (en) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 Encapsulation structure of LED (light emitting diode)
CN103137833A (en) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 Method and structure of light emitting diode (LED) packaging
CN203192857U (en) * 2013-03-13 2013-09-11 深圳市瑞丰光电子股份有限公司 Light emitting diode (LED) packaging structure
CN103682047A (en) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 Cover plate for inorganic packaging of LED

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1521863A (en) * 2003-02-10 2004-08-18 光磊科技股份有限公司 Light-emitting diode packaging device
CN1684278A (en) * 2004-04-15 2005-10-19 联欣光电股份有限公司 Packaging structure of light emitting diode and its packaging method
JP2005347564A (en) * 2004-06-03 2005-12-15 Nec Compound Semiconductor Devices Ltd Airtight seal package
CN201274297Y (en) * 2008-09-23 2009-07-15 王海军 Large power LED encapsulation structure capable of enhancing brightness
CN201307605Y (en) * 2008-12-05 2009-09-09 弘凯光电(深圳)有限公司 LED packaging structure
CN102244178A (en) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 Encapsulation structure of LED (light emitting diode)
CN203192857U (en) * 2013-03-13 2013-09-11 深圳市瑞丰光电子股份有限公司 Light emitting diode (LED) packaging structure
CN103137833A (en) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 Method and structure of light emitting diode (LED) packaging
CN103682047A (en) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 Cover plate for inorganic packaging of LED

Also Published As

Publication number Publication date
CN104037316A (en) 2014-09-10

Similar Documents

Publication Publication Date Title
CN104037316B (en) A kind of LED inorganic encapsulateds support and its method for packing
CN103762298A (en) LED wafer combination package material and technology
CN103137833A (en) Method and structure of light emitting diode (LED) packaging
CN106449542A (en) Package structure of semiconductor light-emitting chip with airtight window free of silica gel
CN104576905B (en) Chip mounting method and chip packing-body
CN104392942A (en) Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste
CN103022307A (en) Wafer-level LED packaging method
CN203895492U (en) LED discrete part device support rack
CN102881806B (en) Surface mounted device light emitting diode (SMD LED) unit and packaging method thereof
CN1945803B (en) Packaging method for high power LED expansion light source device
CN103943763B (en) A kind of encapsulating structure and method of flip LED chips
CN203910858U (en) Fully-inorganic surface-mount LED packaging structure
CN105870297A (en) LED light source and packaging method thereof
CN103022333B (en) A kind of die-bonding method of LED core particle
WO2013143038A1 (en) Method for manufacturing light-emitting diode wafer directly emitting white light
CN103824926B (en) A kind of manufacture method of multi-chip LED package body
CN203932103U (en) A kind of LED inorganic encapsulated support
CN107516705B (en) Novel manufacturing process based on NCSP packaging technology
CN106981555A (en) A kind of tazza high reliability purple LED packaging and its manufacture method
TWI528596B (en) Led package and method of manufacturing the same
CN106764560A (en) A kind of manufacture method of LED
CN103855280B (en) A kind of LED wafer level packaging methods
CN206098442U (en) Optical chip packaging structure is sent out to semiconductor of airtight no silica gel of window
CN102280427B (en) Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof
CN105580130A (en) Substrate for mounting chip and chip package

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1

Applicant after: Hongli Newell group Limited by Share Ltd

Address before: Huadu District, Guangdong city of Guangzhou Province, 510800 East Town Airport high-tech industrial base and SAST Jingu South Road intersection

Applicant before: Guangzhou Hongli Tronic Co., Ltd.

COR Change of bibliographic data
GR01 Patent grant
GR01 Patent grant