CN102280427B - Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof - Google Patents
Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof Download PDFInfo
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- CN102280427B CN102280427B CN 201110185306 CN201110185306A CN102280427B CN 102280427 B CN102280427 B CN 102280427B CN 201110185306 CN201110185306 CN 201110185306 CN 201110185306 A CN201110185306 A CN 201110185306A CN 102280427 B CN102280427 B CN 102280427B
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- bottom plate
- silicon
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- radiating bottom
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 239000004033 plastic Substances 0.000 title claims abstract description 49
- 229920003023 plastic Polymers 0.000 title claims abstract description 49
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 21
- 239000002184 metal Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005245 sintering Methods 0.000 claims abstract description 20
- 238000005476 soldering Methods 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000499 gel Substances 0.000 claims description 12
- 238000012856 packing Methods 0.000 claims description 10
- 230000010412 perfusion Effects 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 239000010960 cold rolled steel Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910002027 silica gel Inorganic materials 0.000 abstract 1
- 239000000741 silica gel Substances 0.000 abstract 1
- 229960001866 silicon dioxide Drugs 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a silicon controlled packaging structure capable of packaging metal and plastic in a mixed mode and a packaging method thereof. The silicon controlled packaging structure capable of packaging metal and plastic in a mixed mode comprises a cooling bottom plate, a silicon controlled chip, a gate pole lead sheet, an anode pole lead sheet and a cathode lead sheet, wherein an alumina ceramic chip is fixed between the cooling bottom plate and the silicon controlled chip; a metal ring is fixed on the cooling bottom plate on the periphery of the alumina ceramic chip; and the outer surfaces of the gate pole lead sheet, the anode pole lead sheet and the cathode lead sheet are sheathed with a plastic ring. The packaging method comprises the following steps of: a. welding the metal ring onto the metal bottom plate; b. loading the ceramic chip onto soldering paste; c. applying the soldering paste onto the ceramic chip; d. assembling the anode pole lead sheet; e. installing the silicon controlled chip; f. installing three lead sheets; g. sintering in a furnace; h. filling silicagel; and i. filling in the plastic ring. The silicon controlled packaging structure has the advantages of good cooling effect and is convenient to install, product reliability is improved, and the lead sheet is convenient, accurate and reliable to fix.
Description
Technical field
The present invention relates to the semiconductor device manufacturing, relate in particular to the silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package.
The present invention relates to the semiconductor device manufacturing, relate in particular to the method for packing of the silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package.
Background technology
The packing forms of present controllable silicon product: large chip (more than the 100A) the flat encapsulation of adopting compression joint type, the many employing Plastic Package of little chip (100A is following), the middle packing forms that is combined in addition module more.In these some packing forms, the product bigger than normal for size in the little chip tends to occur owing to the heat radiation that affects product less than normal of heat sink area when adopting Plastic Package, thereby the bearing power that makes product is subject to larger restriction, just seems very necessary so seek a kind of new encapsulating structure at this grade product.
Summary of the invention
The silicon controlled rectifier packaging structure that the purpose of this invention is to provide a kind of metal and plastics hybrid package, this packing forms strengthened radiating bottom plate area, reduced the thermal resistance of product, thereby improved the use power of product.
Another object of the present invention provides the method for packing of the silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package.
The technical solution used in the present invention is:
The silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package, comprise radiating bottom plate, controlled silicon chip, the gate lead sheet, anode tap sheet and cathode leg sheet, be fixed with alumina ceramic chip between described radiating bottom plate and the controlled silicon chip, be fixed with becket on the radiating bottom plate of alumina ceramic chip periphery, described gate lead sheet, anode tap sheet and cathode leg sheet bottom directly is welded and fixed with the lead-in wire film of controlled silicon chip respectively, described gate lead sheet, anode tap sheet and cathode leg sheet outer race have plastic hoop, described plastic hoop is fixed by socket on becket, described gate lead sheet, be covered with the flexible glue body embedding bed of material on the lead-in wire film pad of anode tap sheet and cathode leg sheet bottom and controlled silicon chip, be covered with the epoxide resin encapsulation material layer above the described flexible glue body embedding bed of material, described epoxide resin encapsulation material layer is lower than the upper along height of plastic hoop.
Described radiating bottom plate is four jiaos of diamond shape that are the circular arc transition, and described radiating bottom plate is that the thick surface of cold-rolled steel plate nickel plating of 2mm forms, and described radiating bottom plate middle part is provided with the fixedly square indent of alumina ceramic chip.
Described alumina ceramic chip is by the Al of mass concentration 96%
2O
3The two sides of ceramics scrape and burning infiltration molybdenum manganese slurry after electronickelling form.
Described plastic hoop is made by the flame-proof ABS plastics, and described plastic hoop is provided with and the close-fitting step of becket rim of the mouth.
The described flexible glue body embedding bed of material is silicon gel layer.
The method for packing of the silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package may further comprise the steps:
A, at first becket is soldered on the radiating bottom plate with girth welding machine;
B, the radiating bottom plate that will weld becket are placed on the alignment pin on the sintering graphite boat, put soldering paste with Glue dripping head at radiating bottom plate, alumina ceramic chip are installed on the soldering paste of radiating bottom plate;
C, continuation are put soldering paste with corresponding Glue dripping head at the nickel surface of alumina ceramic chip;
D, location-plate is inserted on the alignment pin of sintering mould, carry out the assembling of anode tap sheet;
E, take off location-plate, after the anode tap sheet continues the some soldering paste, finish the installation of controlled silicon chip;
F, location-plate is put on the cathode leg sheet and then the gate lead sheet penetrates the anode tap sheet that assembles, be inserted in again alignment pin, finish the installation of three lead wire;
G, the product that assembles is advanced the stove sintering together with sintering mould and location-plate, 330 ℃ of sintering temperatures, sintering time 5-8 minute, the protection nitrogen flow was per minute 80L;
H, carry out the perfusion of two component silicon gels: around the controlled silicon chip in two component silicon gels injection beckets that will mix with large syringe and the lead solder-joint, after the silicon gel solidifies, take off location-plate;
I, plastic hoop is inserted in the becket, carry out the perfusion of PGL again in plastic hoop, the height of perfusion is lower than the upper along height of plastic hoop.
Advantage of the present invention is: the area of radiating bottom plate is enough large, can be conducive to the heat radiation of product, improves the carrying load ability of product; Adopt the insulation structure, made things convenient for the installation of user to device; Chip uses soft potting compound to carry out can, has reduced the stress of chip, has improved the reliability of product; Use the assembling pattern of lead wire, can three lead wire are convenient, accurately, fixed position reliably.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is schematic diagram of the present invention.
Fig. 2 is vertical view of the present invention.
Fig. 3 is the structural representation of radiating bottom plate of the present invention.
Fig. 4 is the structural representation of alumina ceramic chip of the present invention.
Fig. 5 is the end view of alumina ceramic chip of the present invention.
Fig. 6 is the structural representation of becket of the present invention.
Fig. 7 is the end view of becket of the present invention.
Fig. 8 is the structural representation of plastic hoop of the present invention.
Fig. 9 is the end view of plastic hoop of the present invention.
Figure 10 is the structural representation of cathode leg sheet of the present invention.
Figure 11 is the end view of cathode leg sheet of the present invention.
Figure 12 is the vertical view of cathode leg sheet of the present invention.
Figure 13 is the structural representation of anode tap sheet of the present invention.
Figure 14 is the end view of anode tap sheet of the present invention.
Figure 15 is the vertical view of anode tap sheet of the present invention.
Figure 16 is the structural representation of gate lead sheet of the present invention.
Figure 17 is the end view of gate lead sheet of the present invention.
Figure 18 is the vertical view of gate lead sheet of the present invention.
Figure 19 is the structural representation of location-plate of the present invention.
Figure 20 is assembly process figure of the present invention.
Wherein: 1, radiating bottom plate, 2, controlled silicon chip, 3, square indent, 4, alumina ceramic chip, 5, becket, 6, the gate lead sheet, 7, anode tap sheet, 8, the cathode leg sheet, 9, plastic hoop, 10, step openning, 11, location-plate, 12, alignment pin, 13, sintering mold, 14, lead-in wire film, 15, the flexible glue body embedding bed of material, 16, the epoxide resin encapsulation material layer.
Embodiment
Shown in Fig. 1-2 0, the silicon controlled rectifier packaging structure of a kind of metal of the present invention and plastics hybrid package, comprise radiating bottom plate 1, controlled silicon chip 2, gate lead sheet 6, anode tap sheet 7 and cathode leg sheet 8, be fixed with alumina ceramic chip 4 between described radiating bottom plate 1 and the controlled silicon chip 2, be fixed with becket 5 on the radiating bottom plate 1 of alumina ceramic chip 4 peripheries, described gate lead sheet 6, anode tap sheet 7 and cathode leg sheet 8 bottoms directly are welded and fixed with the lead-in wire film 14 of controlled silicon chip 2 respectively, described gate lead sheet 6, anode tap sheet 7 and cathode leg sheet 8 outer race have plastic hoop 9, described plastic hoop 9 is fixed by socket on becket 5, described gate lead sheet 6, be covered with the flexible glue body embedding bed of material 15 on lead-in wire film 14 pads of anode tap sheet 7 and cathode leg sheet 8 bottoms and controlled silicon chip 2, be covered with epoxide resin encapsulation material layer 16 above the described flexible glue body embedding bed of material 15, described epoxide resin encapsulation material layer 16 is lower than the upper along height of plastic hoop 9, described radiating bottom plate 1 is four jiaos of diamond shape that are the circular arc transition, described radiating bottom plate 1 forms for the thick surface of cold-rolled steel plate nickel plating of 2mm, described radiating bottom plate 1 middle part is provided with the fixedly square indent 3 of alumina ceramic chip 4, and described alumina ceramic chip 4 is by the Al of mass concentration 96%
2O
3The two sides of ceramics scrape and burning infiltration molybdenum manganese slurry after electronickelling form, described plastic hoop 9 is made by the flame-proof ABS plastics, described plastic hoop 9 is provided with and becket 5 close-fitting step rims of the mouth 10, the described flexible glue body embedding bed of material 15 is silicon gel layer.
The method for packing of the silicon controlled rectifier packaging structure of a kind of metal and plastics hybrid package may further comprise the steps:
A, at first becket 5 usefulness girth welding machines are soldered on the radiating bottom plate 1;
B, the radiating bottom plate 1 that will weld becket 5 are placed on the alignment pin 12 on the sintering graphite boat, put soldering paste with Glue dripping head at radiating bottom plate 1, alumina ceramic chip 4 are installed on the soldering paste of radiating bottom plate 1;
C, continuation are put soldering paste with corresponding Glue dripping head at the nickel surface of alumina ceramic chip 4;
D, location-plate 11 is inserted on the alignment pin 12 of sintering mould 13, carry out the assembling of anode tap sheet 7;
E, take off location-plate 11, after anode tap sheet 7 continues the some soldering paste, finish the installation of controlled silicon chip;
F, location-plate 11 is put on cathode leg sheet 8 and then gate lead sheet 6 penetrates the anode tap sheet 7 that assembles, be inserted in again alignment pin 12, finish the installation of three lead wire;
G, the product that assembles is advanced the stove sintering together with sintering mould 13 and location-plate 11,330 ℃ of sintering temperatures, sintering time 5-8 minute, the protection nitrogen flow was per minute 80L;
H, carry out the perfusion of two component silicon gels: two component silicon gels that will mix with large syringe inject the interior controlled silicon chip of beckets 9 and lead solder-joint around, after the silicon gel solidifies, take off location-plate 11;
I, plastic hoop 9 is inserted in the beckets 5, carry out the perfusion of PGL again in plastic hoop 9, the height of perfusion is lower than the upper along height of plastic hoop.
The area of radiating bottom plate 1 is enough large, can be conducive to the heat radiation of product, improves the carrying load ability of product; Adopt the insulation structure, made things convenient for the installation of user to device; Chip uses soft potting compound to carry out can, has reduced the stress of chip, has improved the reliability of product; Use the assembling pattern of lead wire, can three lead wire are convenient, accurately, fixed position reliably.
Claims (6)
1. the silicon controlled rectifier packaging structure of a metal and plastics hybrid package, comprise radiating bottom plate, controlled silicon chip, the gate lead sheet, anode tap sheet and cathode leg sheet, it is characterized in that: be fixed with alumina ceramic chip between described radiating bottom plate and the controlled silicon chip, be fixed with becket on the radiating bottom plate of alumina ceramic chip periphery, described gate lead sheet, anode tap sheet and cathode leg sheet bottom directly is welded and fixed with the lead-in wire film of controlled silicon chip respectively, described gate lead sheet, anode tap sheet and cathode leg sheet outer race have plastic hoop, described plastic hoop is fixed by socket on becket, described gate lead sheet, be covered with the flexible glue body embedding bed of material on the lead-in wire film pad of anode tap sheet and cathode leg sheet bottom and controlled silicon chip, be covered with the epoxide resin encapsulation material layer above the described flexible glue body embedding bed of material, described epoxide resin encapsulation material layer is lower than the upper along height of plastic hoop.
2. the silicon controlled rectifier packaging structure of a kind of metal according to claim 1 and plastics hybrid package, it is characterized in that: described radiating bottom plate is four jiaos of diamond shape that are the circular arc transition, described radiating bottom plate is that the thick surface of cold-rolled steel plate nickel plating of 2mm forms, and described radiating bottom plate middle part is provided with the fixedly square indent of alumina ceramic chip.
3. the silicon controlled rectifier packaging structure of a kind of metal according to claim 1 and 2 and plastics hybrid package is characterized in that: described alumina ceramic chip scraped by the two sides of the Al2O3 ceramics of mass concentration 96% and burning infiltration molybdenum manganese slurry after electronickelling form.
4. the silicon controlled rectifier packaging structure of a kind of metal according to claim 1 and plastics hybrid package, it is characterized in that: described plastic hoop is made by the flame-proof ABS plastics, and described plastic hoop is provided with and the close-fitting step of becket rim of the mouth.
5. the silicon controlled rectifier packaging structure of a kind of metal according to claim 1 and plastics hybrid package, it is characterized in that: the described flexible glue body embedding bed of material is silicon gel layer.
6. the method for packing of the silicon controlled rectifier packaging structure of a metal and plastics hybrid package is characterized in that: may further comprise the steps:
A, at first becket is soldered on the radiating bottom plate with girth welding machine;
B, the radiating bottom plate that will weld becket are placed on the alignment pin of sintering graphite boat, put soldering paste with Glue dripping head at radiating bottom plate, alumina ceramic chip are installed on the soldering paste of radiating bottom plate;
C, continuation are put soldering paste with corresponding Glue dripping head at the nickel surface of alumina ceramic chip;
D, location-plate is inserted on the alignment pin of sintering mould, carry out the assembling of anode tap sheet;
E, take off location-plate, after the anode tap sheet continues the some soldering paste, finish the installation of controlled silicon chip;
F, location-plate is put on the cathode leg sheet and then the gate lead sheet penetrates the anode tap sheet that assembles, be inserted in again alignment pin, finish the installation of three lead wire;
G, the product that assembles is advanced the stove sintering together with sintering mould and location-plate, 330 ℃ of sintering temperatures, sintering time 5-8 minute, the protection nitrogen flow was per minute 80L;
H, carry out the perfusion of two component silicon gels: around the controlled silicon chip in two component silicon gels injection beckets that will mix with large syringe and the lead solder-joint, after the silicon gel solidifies, take off location-plate;
I, plastic hoop is inserted in the becket, carry out the perfusion of PGL again in plastic hoop, the height of perfusion is lower than the upper along height of plastic hoop.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110185306 CN102280427B (en) | 2011-07-04 | 2011-07-04 | Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110185306 CN102280427B (en) | 2011-07-04 | 2011-07-04 | Silicon controlled packaging structure capable of packaging metal and plastic in mixed mode and method thereof |
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| CN102280427A CN102280427A (en) | 2011-12-14 |
| CN102280427B true CN102280427B (en) | 2013-01-16 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102751246B (en) * | 2012-05-31 | 2016-08-03 | 宗瑞 | A kind of power semiconductor modular and manufacture method thereof |
| JP6967839B2 (en) | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | Heat bonding sheet, heat bonding sheet with dicing tape, manufacturing method of bonded body, power semiconductor device |
| CN106156746B (en) * | 2016-07-19 | 2020-08-28 | 南昌欧菲生物识别技术有限公司 | Fingerprint identification module and terminal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587907A (en) * | 2009-04-29 | 2009-11-25 | 启东市捷捷微电子有限公司 | Low junction capacitance overvoltage protection thyristor apparatus chip and production method thereof |
| CN101901789A (en) * | 2010-06-28 | 2010-12-01 | 启东市捷捷微电子有限公司 | Internal insulation type plastic semiconductor element and preparation method thereof |
| CN202167475U (en) * | 2011-07-04 | 2012-03-14 | 江苏捷捷微电子股份有限公司 | Silicon controlled rectifier packaging structure with hybrid packaging of metal and plastic |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587907A (en) * | 2009-04-29 | 2009-11-25 | 启东市捷捷微电子有限公司 | Low junction capacitance overvoltage protection thyristor apparatus chip and production method thereof |
| CN101901789A (en) * | 2010-06-28 | 2010-12-01 | 启东市捷捷微电子有限公司 | Internal insulation type plastic semiconductor element and preparation method thereof |
| CN202167475U (en) * | 2011-07-04 | 2012-03-14 | 江苏捷捷微电子股份有限公司 | Silicon controlled rectifier packaging structure with hybrid packaging of metal and plastic |
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Effective date of registration: 20200911 Address after: No.6, Jinggangshan Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province, 226000 Patentee after: JIEJIE SEMICONDUCTOR Co.,Ltd. Address before: 226200, 8, Xinglong Road, Qidong science and Technology Pioneer Park, Jiangsu Patentee before: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. |
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