CN102148169B - Silicon carbide power module and packaging method thereof - Google Patents
Silicon carbide power module and packaging method thereof Download PDFInfo
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- CN102148169B CN102148169B CN2011100005054A CN201110000505A CN102148169B CN 102148169 B CN102148169 B CN 102148169B CN 2011100005054 A CN2011100005054 A CN 2011100005054A CN 201110000505 A CN201110000505 A CN 201110000505A CN 102148169 B CN102148169 B CN 102148169B
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- molybdenum
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- molybdenum plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Abstract
The invention relates to a packaging method of a silicon carbide power module, comprising the following steps of: welding an aluminium nitride isolated layer on a molybdenum plate, placing silicon carbide chips into empty spaces of the aluminium nitride isolated layer to be welded with the molybdenum plate; welding molybdenum blocks on the silicon carbide chips, reserving gate lead slots on the molybdenum blocks; placing leads into the gate lead slots, welding and fixing, collecting the leads and leading the leads out; casting and moulding the molybdenum blocks, the silicon nitride isolated layer and the silicon carbon chips in an integrating way, mounting a base, a tube shell and a tube cap, and packaging. The invention also provides a silicon carbide power module. By adopting the method provided by the invention, the silicon carbon power module has higher reliability and stronger thermal cycle capability under the working conditions of high power and high temperature.
Description
Technical field
The present invention relates to the silicon carbide power device encapsulation field, particularly relate to a kind of method for packing and silicon carbide power module of silicon carbide power module.
Background technology
Power semiconductor is widely used in fields such as computer, network service, consumer electronics, Industry Control, automotive electronics, locomotive traction, smelting iron and steel, large power supply, electric power system; Except the normal operation that guarantees these equipment; Power device can also play the effective energy-saving effect, and is indispensable at aspects such as development low-carbon economy, energy-saving and emission-reduction, control climate warmings.
Traditional silicon-based power devices be limited by silicon materials the restriction of intrinsic physical attribute, run into the difficulty that is difficult to overcome in the high-frequency high-power application.In this case; Power device based on carborundum is shown one's talent; Rely on characteristics such as carbofrax material breakdown field strength height, Heat stability is good, charge carrier saturation drift velocity height and thermal conductivity height, can significantly reduce the energy loss and the volume weight of power conversions class devices such as inverter and frequency converter.Can predict, silicon carbide power device will be played the part of more and more important role in the future source of energy system.Since the silicon carbide power Schottky diode comes out; Development and application around silicon carbide power device is active day by day; High-quality, large diameter silicon carbide substrates and the element that significantly improves expose in succession, and are successfully applied to fields such as switched-mode power supply, fuel electric motor car inverter, air conditioning frequency converter and solar power system.
The difference of the packaging technology and the installing and fixing method of tube core or chip is pressed in the encapsulation of silicon carbide power module, mainly is divided into crimping structure, Welding Structure, direct copper board structure etc.The compression joint type structure adopts plate or screw bolt-type packaged die crimping interconnection technique, electrically contacts to rely on the inside and outside realization of exerting pressure, and has solved the thermal fatigue stability problem preferably, can make the power model of big electric current, high power density.It is very high that but this packaged type requires parts evenness such as tube core, briquetting, base plates, otherwise not only will increase the contact heat resistance of module, and can damage chip, and chip can be cracked when serious.These problems are particularly serious under the situation of multicore sheet parallel connection crimping encapsulation.
Because carborundum forms the problem of microtubule and other defective and does not thoroughly solve as yet so far in crystal growing process, make the needed large-sized wafer of big electric current carborundum discrete device and also be difficult to obtain.For silicon carbide power device can be worked under big current condition, must be with a plurality of carborundum chip parallel connection encapsulation.The working temperature of silicon carbide power device can reach 600 ℃, far above 150 ℃ of silicon power device.The hot operation ability of silicon carbide power device not only makes its advantage of in practical application, giving full play to high-frequency high-power, and has reduced the requirement to system's heat budget.But the conventional parallel encapsulation technology adopts welding alloy to be fitted in an end face of device on the liner plate, and other end face and aluminum steel or gold thread are bonded together.This method lacks reliability under high-power, hot operation condition, the thermal cycle ability, and do not possess enough mechanical strengths.
Summary of the invention
Technical problem to be solved by this invention is a kind of method for packing of silicon carbide power module, and this method for packing can make the silicon carbide power module under high-power, hot operation condition, have higher reliability, stronger thermal cycle ability.
The method for packing of a kind of silicon carbide power module of the present invention may further comprise the steps: welding one deck aluminium nitride separator on molybdenum plate, the carborundum chip is placed in the space of aluminium nitride separator, and weld with molybdenum plate; Welding molybdenum piece is reserved the gate lead groove on the molybdenum piece on the carborundum chip; In the gate lead groove, welding is fixing with lead placement, and the collection lead-in wire is also drawn; With molybdenum plate, aluminium nitride separator and the moulding of carborundum chip one-piece casting, mounting seat, pipe shell-and-tube lid encapsulate with epoxy resin.
Preferably, before mounting seat, pipe shell-and-tube lid, also comprise: at the contact-making surface filling gel of epoxy resin and molybdenum plate, aluminium nitride separator and carborundum chip.
Preferably, the cathode plane of polishing molybdenum plate makes the cathode plane of molybdenum plate smooth and parallel with the molybdenum plate anode surface.
Preferably, when on the carborundum chip, welding the molybdenum piece, use Au-20%Ge as scolder.
Preferably, collect lead-in wire and draw and is specially: collect lead-in wire and draw in molybdenum plate central authorities, adopt the collar to insulate after drawing.
Preferably, the shell material is Ke's valve alloy, becomes annular with the matched seal of porcelain ring.
Preferably, said being encapsulated as used the cold welding sealing.
The present invention also provides a kind of silicon carbide power module, and this method for packing can make the silicon carbide power module under high-power, hot operation condition, have higher reliability, stronger thermal cycle ability.
A kind of silicon carbide power module of the present invention, the carborundum chips welding is between the anode molybdenum sheet and negative electrode molybdenum sheet of molybdenum plate, and the periphery of carborundum chip is the aluminium nitride separator; The carborundum chip is provided with the molybdenum piece, and gate lead is drawn in the gate lead groove of molybdenum piece, and welding is fixing; Epoxy resin is filled on molybdenum plate, aluminium nitride separator and the carborundum chip, and periphery is separately installed with base, pipe shell-and-tube lid.
Preferably, the contact-making surface of epoxy resin and molybdenum plate, aluminium nitride separator and carborundum chip is filled with silica gel.
Preferably, the cathode plane of said molybdenum plate is smooth and parallel with the molybdenum plate anode surface.
Compared with prior art, the present invention has the following advantages:
The present invention has avoided module to bear excessive thermal shock and thermal expansion mismatch through rational encapsulating material and structure choice.The present invention is very close at the thermal coefficient of expansion of carborundum chip and aluminium nitride next door layer, effectively avoids thermal expansion mismatch.Aluminium nitride separator and molybdenum plate all have high thermal conductivity, are beneficial to the heat radiation of carborundum chip, avoid the carborundum chip to bear excessive thermal shock.Assurance silicon carbide power module can be worked under 250 ℃ high temperature like this.
The present invention has solved the discontinuity problem that the parallel connection of multicore sheet press-fits through the way that High temp. epoxy resins global formation and single face grind, and improves the mechanical strength of silicon carbide power module.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention; To do to introduce simply to the accompanying drawing of required use among prior art and the embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a silicon carbide power module package flow chart of the present invention;
Fig. 2 is molybdenum plate of the present invention, aluminium nitride separator and carborundum chip sketch map;
Fig. 3 welds the molybdenum plate sketch map for the present invention on the carborundum chip;
Fig. 4 is provided with sketch map for the present invention's lead-in wire;
Fig. 5 is a casting epoxy resin sketch map of the present invention;
Fig. 6 is mounting seat of the present invention, shell sketch map;
Fig. 7 is mounting pipe lid sketch map of the present invention;
Fig. 8 is a silicon carbide power module three-dimensional exploded view of the present invention;
Fig. 9 is a silicon carbide power module cutaway view of the present invention;
Figure 10 is the partial enlarged drawing of Fig. 9.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below in conjunction with accompanying drawing and embodiment the present invention done further detailed explanation.
The present invention proposes the compression joint type encapsulation scheme that a cover is applicable to the parallel connection of carborundum multicore sheet; This scheme adopts reasonable structural design and suitable encapsulating material; Adaptable across silicon carbide thyristor, diode, MOSFET, IGBT, JEFT, BJT constant power device; Make the device can be 250 ℃ of high temperatures work, heat radiation density can reach 450W/cm2.In addition, this method has not only solved the problem of multicore sheet crimping discontinuity, and encapsulates very convenient.
The encapsulation of carborundum multicore sheet parallel connection compression joint type has advantages such as easy to operate, that stability is high, the thermal cycle ability is strong; But, the parallel connection encapsulation that the compression joint type encapsulation technology is applied to the carborundum chip need is solved the encapsulation of multicore sheet the stressed uniformity of operation convenience, chip, thermal stress mismatch and the control utmost point (such as the grid of IGBT or the gate pole of thyristor) key issue such as draw.
Referring to Fig. 1, silicon carbide power module package flow chart of the present invention is shown, specifically may further comprise the steps:
Step S101, selection one circular molybdenum plate 21 (see figure 2)s, welding one deck aluminium nitride (AlN) separator 22 is placed into carborundum chip 23 in the grid of AlN separator 22 on molybdenum plate 21, with molybdenum plate 21 welding.AlN separator 22 order are provided with a plurality of grids of order, and each grid distance is suitable, and each grid is placed a carborundum chip 23.
The thermal coefficient of expansion of molybdenum plate 21, AlN separator 22 and carborundum chip 23 is close, can avoid differing the fracture that causes more greatly because of thermal coefficient of expansion.AlN separator 22 has high thermal conductivity, is beneficial to the heat radiation of carborundum chip 23.
Step S102, on carborundum chip 23 welding molybdenum piece 24 (see figure 3)s, reserve gate lead groove 241 on the molybdenum piece 24, select Au-20%Ge as scolder during welding.
Step S103, will go between 25 is placed on (see figure 4)s in the gate lead groove 241, and welding is fixing, and 21 central authorities collect and draw at molybdenum plate.After drawing, adopts by lead-in wire 25 collar insulation.Scolder is selected Au-20%Ge during welding.This lead-in wire 25 is the gate lead of carborundum chip 23.Like this, realize the parallel connection setting of a plurality of carborundum chips 23.
Step S104, employing epoxy resin become a disk (to see Fig. 5 molybdenum plate 21, AlN separator 22 and carborundum chip 23 one-piece castings; The contact-making surface of epoxy resin and each potted element adopts the silica gel transition, and cathode plane is polished flat and guarantees parallel with anode surface.
Bi-component silica gel can keep elasticity for a long time at 250 ℃, and has good electric property and chemical stability.Surface grinding can solve the problem of the discontinuity that the crimping of multicore sheet runs into after the moulding of silicon carbide power module whole, and makes follow-up encapsulation step easy operating.
Step S105, be disk mounting seat 28, shell 29 (see figure 6)s of packing into.Base 28 is a nickel-clad copper, and thermal conductivity is high, and heat dispersion is good; Shell 29 materials are Ke's valve alloy, become annulus with the matched seal of 95%Al2O3 porcelain ring, encase disk.
Step S106, close upper tube cap 30, use cold welding sealing (see figure 7).Press-fit the back pressure through the pipe cover 30 and base 28 pass to each contact-making surface, be connected with electricity to guarantee good calorifics.
Referring to Fig. 8; Silicon carbide power module three-dimensional exploded view of the present invention is shown, is followed successively by from top to bottom that pipe covers 30, filler 32, gate lead 25, anode molybdenum sheet 211, carborundum chip 23, aluminium nitride separator 22, negative electrode molybdenum sheet 212, alignment pin 31 and bases 28 such as epoxy resin and silica gel.
Referring to Fig. 9 and 10; Silicon carbide power module cutaway view and partial enlarged drawing; Fixing carbonization silicon 23 between the anode molybdenum sheet 211 of molybdenum plate 21 and negative electrode molybdenum sheet 212; The periphery of carborundum chip 23 is aluminium nitride separators 22, and fillers such as epoxy resin and silica gel 32 are filled on molybdenum plate 21, AlN separator 22 and the carborundum chip 23.
The carborundum chip is provided with molybdenum piece (not shown), and gate lead 25 is drawn in the gate lead groove of molybdenum piece, and welding is fixing; This silicon carbide power module is reached the standard grade and is distinguished mounting pipe lid 30 and base 28, and shell 29 is installed all around.This silicon carbide power module centers is provided with alignment pin 31.
Referring to table 1, the calorifics and the specific and purposes of conduction of the main encapsulating material of the present invention is shown.
The present invention has avoided module to bear excessive thermal shock and thermal expansion mismatch through rational encapsulating material and structure choice.Visible by table 1, the present invention is very close at the thermal coefficient of expansion of carborundum chip 23 and aluminium nitride next door layer 22, effectively avoids thermal expansion mismatch.Simultaneously, AlN separator 22 all has high thermal conductivity with molybdenum plate 21, is beneficial to the heat radiation of carborundum chip 23, avoids carborundum chip 23 to bear excessive thermal shock.Assurance silicon carbide power module can be worked under 250 ℃ high temperature like this.
The present invention has solved the discontinuity problem that the parallel connection of multicore sheet press-fits through the way that High temp. epoxy resins global formation and single face grind, and improves the mechanical strength of silicon carbide power module.
The present invention is easy to operate, is easy to displacement, is widely used, and is applicable to most carborundum two ends and three-terminal power device.
The above only is a preferred implementation of the present invention; Should be understood that; For those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching; Also can above-mentioned embodiment make up, these technical schemes of improving, retouching and being combined to form also should be regarded as protection scope of the present invention.
Claims (10)
1. the method for packing of a silicon carbide power module is characterized in that, may further comprise the steps:
Welding one deck aluminium nitride separator is placed into the carborundum chip in the space of aluminium nitride separator on molybdenum plate, welds with molybdenum plate;
Welding molybdenum piece is reserved the gate lead groove on the molybdenum piece on the carborundum chip;
In the gate lead groove, welding is fixing with lead placement, and the collection lead-in wire is also drawn;
With molybdenum plate, aluminium nitride separator and the moulding of carborundum chip one-piece casting, mounting seat, pipe shell-and-tube lid encapsulate with epoxy resin.
2. the method for claim 1 is characterized in that, before mounting seat, pipe shell-and-tube lid, also comprises:
Contact-making surface filling gel at epoxy resin and molybdenum plate, aluminium nitride separator and carborundum chip.
3. the method for claim 1 is characterized in that, the cathode plane of polishing molybdenum plate makes the cathode plane of molybdenum plate smooth and parallel with the molybdenum plate anode surface.
4. the method for claim 1 is characterized in that, when on the carborundum chip, welding the molybdenum piece, uses Au-20%Ge as scolder.
5. the method for claim 1 is characterized in that, collects lead-in wire and draw to be specially:
Collect lead-in wire and draw in molybdenum plate central authorities, adopt the collar to insulate after drawing.
6. the method for claim 1 is characterized in that, the shell material is Ke's valve alloy, becomes annular with the matched seal of porcelain ring.
7. the method for claim 1 is characterized in that, said being encapsulated as used the cold welding sealing.
8. a silicon carbide power module is characterized in that, the carborundum chips welding is between the anode molybdenum sheet and negative electrode molybdenum sheet of molybdenum plate, and the periphery of carborundum chip is the aluminium nitride separator; The carborundum chip is provided with the molybdenum piece, and gate lead is drawn in the gate lead groove of molybdenum piece, and welding is fixing;
Epoxy resin is filled on molybdenum plate, aluminium nitride separator and the carborundum chip, and periphery is separately installed with base, pipe shell-and-tube lid.
9. module as claimed in claim 8 is characterized in that, the contact-making surface of epoxy resin and molybdenum plate, aluminium nitride separator and carborundum chip is filled with silica gel.
10. module as claimed in claim 8 is characterized in that, the cathode plane of said molybdenum plate is smooth and parallel with the molybdenum plate anode surface.
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| CN2011100005054A CN102148169B (en) | 2011-01-04 | 2011-01-04 | Silicon carbide power module and packaging method thereof |
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| CN2011100005054A CN102148169B (en) | 2011-01-04 | 2011-01-04 | Silicon carbide power module and packaging method thereof |
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| CN111180345A (en) * | 2018-11-10 | 2020-05-19 | 天津力芯伟业科技有限公司 | Electronic silicon carbide chip |
| CN110246835B (en) | 2019-05-22 | 2020-08-18 | 西安交通大学 | Three-dimensional integrated high-voltage silicon carbide module packaging structure |
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|---|---|---|---|---|
| US6261868B1 (en) * | 1999-04-02 | 2001-07-17 | Motorola, Inc. | Semiconductor component and method for manufacturing the semiconductor component |
| CN101443910A (en) * | 2006-05-12 | 2009-05-27 | 本田技研工业株式会社 | Power semiconductor module |
| CN101569009A (en) * | 2006-09-29 | 2009-10-28 | 美高森美公司 | Plastic surface mount large area power device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6989592B2 (en) * | 2002-05-01 | 2006-01-24 | The Boeing Company | Integrated power module with reduced thermal impedance |
| US8198712B2 (en) * | 2006-06-07 | 2012-06-12 | International Rectifier Corporation | Hermetically sealed semiconductor device module |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261868B1 (en) * | 1999-04-02 | 2001-07-17 | Motorola, Inc. | Semiconductor component and method for manufacturing the semiconductor component |
| CN101443910A (en) * | 2006-05-12 | 2009-05-27 | 本田技研工业株式会社 | Power semiconductor module |
| CN101569009A (en) * | 2006-09-29 | 2009-10-28 | 美高森美公司 | Plastic surface mount large area power device |
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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Effective date of registration: 20200930 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |