CN113113524A - Deep ultraviolet LED device and manufacturing method thereof - Google Patents
Deep ultraviolet LED device and manufacturing method thereof Download PDFInfo
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- CN113113524A CN113113524A CN202110338892.6A CN202110338892A CN113113524A CN 113113524 A CN113113524 A CN 113113524A CN 202110338892 A CN202110338892 A CN 202110338892A CN 113113524 A CN113113524 A CN 113113524A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000007789 sealing Methods 0.000 claims abstract description 140
- 239000000463 material Substances 0.000 claims abstract description 124
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 123
- 239000010453 quartz Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 22
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 22
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 106
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 229910000679 solder Inorganic materials 0.000 claims description 13
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- 238000000576 coating method Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 20
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000006750 UV protection Effects 0.000 description 10
- 239000011368 organic material Substances 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 3
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- 238000002834 transmittance Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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Abstract
The embodiment of the application belongs to the technical field of LED illumination, and relates to a deep ultraviolet LED device and a manufacturing method thereof. The deep ultraviolet LED device comprises a substrate, a light-emitting element, a quartz lens, an ultraviolet-resistant material and a sealing structure; the substrate is provided with a cavity, the light-emitting element is arranged in the cavity, the ultraviolet-resistant material is filled in the cavity, the bond energy of the ultraviolet-resistant material is greater than the energy of ultraviolet rays emitted by the light-emitting element, the substrate is provided with a step for mounting the quartz lens, the quartz lens is arranged on the substrate, the substrate is positioned on one surface of the cavity, and the sealing structure is arranged between the substrate and the quartz lens. The whole light-emitting efficiency of the device is improved, the heat dissipation effect of the deep ultraviolet LED device is improved, the quartz lens and the polydimethylsiloxane are free of gaps by improving the structure of the quartz lens, gas cannot be generated between the polydimethylsiloxane and the quartz lens, and the sealing performance and the reliability are guaranteed.
Description
Technical Field
The application relates to the technical field of LED illumination, in particular to a deep ultraviolet LED device and a manufacturing method thereof.
Background
Because ultraviolet rays, especially deep ultraviolet rays, have a destructive effect on organic materials, the mainstream structure of the packaging of the deep ultraviolet LED at present is to package a quartz lens on a metal or ceramic substrate with a cavity. The packaging form can greatly avoid the damage of ultraviolet rays to organic materials, but the scheme has an obvious defect that light emitted by the light emitting chip directly irradiates in air or protective gas and then emits light through the quartz lens, so that the situation of low light emitting efficiency is caused due to excessive total reflection when the light irradiates in the air after being emitted from the light emitting chip, the use of devices is not facilitated, and the reliability of the devices is influenced.
Disclosure of Invention
The invention aims to provide a deep ultraviolet LED device and a manufacturing method thereof, and solves the technical problem that the existing deep ultraviolet LED is low in light emitting efficiency.
In order to solve the above-mentioned problems, embodiments of the present invention provide the following technical solutions:
a deep ultraviolet LED device comprises a substrate, a light-emitting element, a quartz lens, an ultraviolet-resistant material and a sealing structure; the substrate is provided with a cavity, the light-emitting element is arranged in the cavity, the ultraviolet-resistant material is filled in the cavity, the bond energy of the ultraviolet-resistant material is 450-900 kJ/mol and is greater than the energy of ultraviolet rays emitted by the light-emitting element, the quartz lens is arranged on one surface of the cavity, the substrate is provided with a step for mounting the quartz lens, and the sealing structure is arranged between the substrate and the quartz lens.
Furthermore, a step through hole is formed in the quartz lens and communicated with the cavity.
Further, the sealing structure comprises a first sealing layer and a second sealing layer which are arranged between the side wall of the quartz lens and the side wall of the step, the first sealing layer is sealed on the ultraviolet-resistant material, the second sealing layer is sealed on the first sealing layer, and the density of the first sealing layer is lower than that of the ultraviolet-resistant material.
Further, the sealing structure comprises a first sealing layer and a second sealing layer which are arranged in the step through hole, the first sealing layer is sealed on the ultraviolet-resistant material, the second sealing layer is sealed on the first sealing layer, and the density of the first sealing layer is lower than that of the ultraviolet-resistant material.
Furthermore, a metal coating is arranged on the side wall of the step, and a metal coating is arranged on the side wall of the quartz lens.
Furthermore, one surface of the quartz lens, which faces the ultraviolet-resistant material, is a convex surface or a plane, and one surface of the ultraviolet-resistant material, which faces the quartz lens, is a concave surface or a plane.
Further, the radian of the convex surface of the quartz lens is more than 0 and less than 1.
Further, the first sealing layer is a thermosetting glue layer, and the second sealing layer is a metal solder layer.
Further, the ultraviolet resistant material is polydimethylsiloxane or polydimethylsiloxane mixed with silicon dioxide powder.
Further, the wavelength of the ultraviolet light emitted by the light-emitting element is 260 nm-410 nm.
In order to solve the technical problem mentioned above, an embodiment of the present invention further provides a manufacturing method of a deep ultraviolet LED device, which adopts the following technical scheme:
a manufacturing method of a deep ultraviolet LED device is based on the deep ultraviolet LED device and comprises the following steps:
filling ultraviolet-resistant materials in the cavity of the substrate;
mounting a quartz lens on a substrate;
and sealing between the substrate and the quartz lens to form a sealing structure.
Compared with the prior art, the embodiment of the invention mainly has the following beneficial effects:
a deep ultraviolet LED device and its preparation method, the luminescent element is set up in the cavity, fill the material of resisting ultraviolet in the cavity of the plaque, the material of resisting ultraviolet wraps up the luminescent element, avoid the ultraviolet ray produced by the luminescent element to shine in the air directly and cause the situation that the total reflection is too much to appear, has raised the whole light-emitting efficiency of the device, has promoted the luminance to a great extent, and the thermal conductivity of the material of resisting ultraviolet is many times higher than the air, has promoted the radiating effect of the deep ultraviolet LED device, thus promote the life-span under the abominable environment of the device; after ultraviolet-resistant materials are filled in the cavity of the substrate, a quartz lens is placed on the substrate, and a step through hole on the quartz lens is used for releasing redundant ultraviolet-resistant materials to ensure that the quartz lens and the ultraviolet-resistant materials have no gap; the arrangement of the convex surface of the quartz lens ensures that no gas is generated between the ultraviolet-resistant material and the quartz lens, and the sealing performance and reliability are ensured by improving the structure of the quartz lens; after the redundant ultraviolet-resistant material is released, the first sealing layer is firstly sealed on the ultraviolet-resistant material, and then the second sealing layer is sealed on the first sealing layer, so that good sealing effect and ultraviolet resistance can be achieved; the side wall of the quartz lens and the side wall of the step of the substrate are both sealed by inorganic metal solders, so that the air tightness and the sealing performance have good effects, and the sealing effect and the ultraviolet resistance are further ensured.
Drawings
In order to illustrate the solution of the invention more clearly, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are some embodiments of the invention, and that other drawings may be derived from these drawings by a person skilled in the art without inventive effort.
FIG. 1 is a schematic diagram of the overall structure of a deep ultraviolet LED device in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a deep ultraviolet LED device in an embodiment of the invention before being placed on quartz glass;
FIG. 3 is a schematic structural diagram of a deep ultraviolet LED device after being placed on quartz glass in the embodiment of the invention;
fig. 4 is a top view of a deep ultraviolet LED device in an embodiment of the invention.
Description of reference numerals:
1. a substrate; 11. a step; 12. a cavity; 2. a light emitting element; 3. a quartz lens; 31. a stepped through hole; 4. an ultraviolet resistant material; 5. a sealing structure; 51. a first sealing layer; 52. a second sealing layer; 6. and (5) plating a metal layer.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprising" and "having," and any variations thereof, in the description and claims of the present invention and the description of the above figures are intended to cover non-exclusive inclusions. The terms "first," "second," and the like in the description and in the claims, or in the drawings, are used for distinguishing between different objects and not necessarily for describing a particular sequential order.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The invention provides a deep ultraviolet LED device, which comprises a substrate, a light-emitting element, a quartz lens, an ultraviolet-resistant material and a sealing structure, wherein the substrate is made of a transparent material; the substrate is provided with a cavity, the light-emitting element is arranged in the cavity, the ultraviolet-resistant material is filled in the cavity, the bond energy of the ultraviolet-resistant material is 450-900 kJ/mol and is greater than the energy of ultraviolet rays emitted by the light-emitting element, the quartz lens is arranged on one surface of the cavity, the substrate is provided with a step for mounting the quartz lens, and the sealing structure is arranged between the substrate and the quartz lens.
Based on the deep ultraviolet LED device, the invention also provides a manufacturing method of the deep ultraviolet LED device, which comprises the following steps:
filling ultraviolet-resistant materials in the cavity of the substrate;
mounting a quartz lens on a substrate;
and sealing between the substrate and the quartz lens to form a sealing structure.
The invention provides a deep ultraviolet LED device and a manufacturing method thereof.A light-emitting element is arranged in a cavity, an ultraviolet-resistant material is filled in the cavity of a substrate, and the ultraviolet-resistant material wraps the light-emitting element, so that the situation that the total reflection is excessive due to the fact that ultraviolet rays generated by the light-emitting element directly irradiate the air is avoided, the overall light-emitting efficiency of the device is improved, the brightness is improved to a greater extent, the bond energy of the ultraviolet-resistant material is greater than the energy of the ultraviolet rays emitted by the light-emitting element, and the ultraviolet rays cannot break molecular chains of the ultraviolet-resistant material in the irradiation process, so that the ultraviolet-resistant material cannot be influenced by the ultraviolet rays, and the gap between the substrate and a quartz lens is sealed through a sealing structure.
In order to make the technical solutions of the present invention better understood by those skilled in the art, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the relevant drawings.
Examples
As shown in fig. 1 and 2, a deep ultraviolet LED device includes a substrate 1, a light emitting element 2, a quartz lens 3, an ultraviolet-resistant material 4, and a sealing structure 5.
The substrate 1 is provided with a cavity 12, the light-emitting element 2 is arranged in the cavity 12, the light-emitting element 2 is used for emitting ultraviolet rays, the ultraviolet-resistant material 4 is filled in the cavity 12, the bonding energy of the ultraviolet-resistant material 4 is greater than the energy of the ultraviolet rays emitted by the light-emitting element 2, the quartz lens 3 is arranged on the substrate 1, the substrate 1 is positioned on one surface of the cavity 12, the step 11 for installing the quartz lens 3 is arranged on the substrate 1, and the sealing structure 5 is arranged between the substrate 1 and the quartz lens 3.
According to the deep ultraviolet LED device provided by the embodiment of the invention, the light-emitting element 2 is arranged in the cavity 12, the cavity 12 of the substrate 1 is filled with the ultraviolet-resistant material 4, the ultraviolet-resistant material 4 is wrapped in the light-emitting element 2, the situation that the total reflection is excessive due to the fact that ultraviolet rays generated by the light-emitting element 2 directly irradiate the air is avoided, the overall light-emitting efficiency of the device is improved, the brightness is improved to a large extent, the bond energy of the ultraviolet-resistant material 4 is larger than the energy of the ultraviolet rays emitted by the light-emitting element 2, and the molecular chains of the ultraviolet-resistant material 4 cannot be broken by the ultraviolet rays in the irradiation process, so that the ultraviolet-resistant material 4 cannot be influenced by the ultraviolet rays, and the sealing structure 5 is used for sealing the gap between the substrate.
In one embodiment, the uv-resistant material 4 is a high-bonding-energy uv-resistant material 4, and the bonding energy of the high-bonding-energy uv-resistant material 4 ranges from 450kJ/mol to 900kJ/mol, such as C-F489, C ═ O745, H-F565, and the like, which are not limited by this example.
The ultraviolet-resistant material 4 is in a liquid state or a solid state.
In one embodiment, the uv-resistant material 4 is in a liquid state, and the uv-resistant material 4 is Polydimethylsiloxane (PDMS) or polydimethylsiloxane mixed with silica powder. The polydimethylsiloxane has high transparency, heat resistance, cold resistance, small viscosity change along with temperature, water resistance, small surface tension, good thermal conductivity and other characteristics, the thermal conductivity coefficient is 0.134W/(m.K) -0.159W/(m.K), the light transmittance is high, and the polydimethylsiloxane has physiological inertia and good chemical stability.
In this embodiment, taking the ultraviolet-resistant material 4 as polydimethylsiloxane or polydimethylsiloxane mixed with silicon dioxide powder as an example, the molecular chain Si — O bond energy of the polydimethylsiloxane is 460kJ/mol, when the silicon dioxide powder is mixed, the silicon dioxide accounts for 2% to 8% of the total mass ratio, and the particle size of the silicon dioxide is between 5nm and 50 nm.
In one embodiment, the light emitting element 2 emits ultraviolet light having a wavelength of 260nm to 410nm, and further, is particularly suitable for ultraviolet light having a wavelength of 260nm to 320 nm.
When ultraviolet rays are irradiated to a certain substance, a photochemical reaction occurs. Ultraviolet light having a wavelength of 200nm to 400nm has an energy (3eV to 6eV) which is the energy required for photochemical reactions upon absorption by many substances (chemical bond energy is also in the range of 3eV to 6 eV). In particular, short-wave ultraviolet rays have large photon energy, are particularly effective for photochemical reactions, and can directly cause the combination and decomposition of some substances.
The nature of ultraviolet light to destroy organic materials is that the energy of ultraviolet light is higher than the bond energy of organic materials, which breaks the molecular chains of organic materials during irradiation. The polydimethylsiloxane belongs to a high-bonding-energy material, the molecular chain Si-O bonding energy is 460kJ/mol, the shorter the wavelength of the ultraviolet ray is, the higher the energy is, and the energy of the ultraviolet ray with the wavelength of 260nm is about 450 kJ/mol. Therefore, the light-emitting element 2 having an ultraviolet wavelength of more than 260nm and less than 410nm is selected because the polydimethylsiloxane is not affected by ultraviolet rays when the wavelength is 260nm or more. The polydimethylsiloxane has high transmittance to ultraviolet rays, and the transmittance is more than 70% at 260nm or more.
Polydimethylsiloxane is filled in the cavity 12 of the substrate 1, so that the light emitting efficiency of the deep ultraviolet LED device is greatly improved, and compared with the case of not adding polydimethylsiloxane, the added polydimethylsiloxane has the brightness improved by about 50%. And the thermal conductivity of the polydimethylsiloxane is many times higher than that of air, so that the heat dissipation effect of the deep ultraviolet LED device is improved, and the service life of the device in a severe environment is prolonged.
The quartz lens 3 is provided with a step through hole 31, the step through hole 31 can be divided into two layers or more than two layers, the diameters of the through holes of the adjacent layers are different to form a step, the step through hole 31 can be arranged at the edge of the quartz lens 3 or in the quartz lens 3, and the step through hole 31 is communicated with the cavity 12.
In one embodiment, the step through hole 31 is divided into an upper layer and a lower layer, and the upper layer is large and the lower layer is small.
In one embodiment, referring to fig. 3 and 4, two step through holes 31 are disposed at the edge of the quartz lens 3, and since the edge of the quartz lens 3 is located at the inner side of the sidewall of the step 11 of the substrate 1 and the step through holes 31 communicate with the cavity 12, the step through holes 31 facilitate the discharge of the excess uv-resistant material 4. After filling the ultraviolet-resistant material 4 in the cavity 12 of the substrate 1, the quartz lens 3 and the step through hole 31 at the edge of the quartz lens 3 are placed on the substrate 1 to release the redundant ultraviolet-resistant material 4, so as to ensure that the quartz lens 3 and the ultraviolet-resistant material 4 have no gap. In other embodiments, the number of the stepped through holes 31 may be one, three, four, or more.
In one embodiment, with reference to fig. 1 and 4, the sealing structure 5 includes a first sealing layer 51 and a second sealing layer 52 disposed between the sidewall of the quartz lens 3 and the sidewall of the step 11, the first sealing layer 51 is sealed on the ultraviolet-resistant material 4, the second sealing layer 52 is sealed on the first sealing layer 51, and the density of the first sealing layer 51 is lower than that of the ultraviolet-resistant material 4, so as to achieve sealing of the cavity 12.
In another embodiment, with reference to fig. 1 and 4, the sealing structure 5 includes a first sealing layer 51 and a second sealing layer 52 disposed in the stepped through hole 31, and accordingly, the first sealing layer 51 and the second sealing layer 52 are respectively disposed in the stepped through hole 31, a lower layer of the stepped through hole 31 is filled with the excess ultraviolet-resistant material 4, the first sealing layer 51 is disposed in an upper layer of the stepped through hole 31 and sealed on the ultraviolet-resistant material 4, the second sealing layer 52 is disposed in an upper layer of the stepped through hole 31 and sealed on the first sealing layer 51, and a density of the first sealing layer 51 is lower than a density of the ultraviolet-resistant material 4. Note that the first sealing layer 51 and the second sealing layer 52 are provided between the side wall of the quartz lens 3 and the side wall of the step 11 in addition to the step through hole 31, thereby sealing the cavity 12. In other embodiments, the first sealing layer 51 may be disposed in the lower layer of the stepped through hole 31 and sealed on the ultraviolet-resistant material 4, and the sealing structure 5 may further be disposed with two or more sealing layers.
After the quartz lens 3 releases the redundant ultraviolet-resistant material 4 through the step through hole 31, the quartz lens is firstly sealed on the ultraviolet-resistant material 4 by the first sealing layer 51 and then sealed on the first sealing layer 51 by the second sealing layer 52, so that a good sealing effect and ultraviolet resistance can be achieved; since the second sealing layer 52 is heavier than the ultraviolet-resistant material 4, the upper layer of the stepped through hole 31 is sealed by the first sealing layer 51, then the upper layer of the stepped through hole 31 is sealed by the second sealing layer 52, and the first sealing layer 51 and then the second sealing layer 52 are used for sealing, so that the influence of sinking caused by the overweight of the second sealing layer 52 is avoided.
As shown in fig. 1, in one embodiment, the first sealing layer 51 is a thermosetting glue layer, and the second sealing layer 52 is a metal solder layer. The ultraviolet-resistant material 4 is sealed by thermosetting glue, the glue is cured to form a thermosetting glue layer, primary sealing of the device is realized, then the thermosetting glue layer is sealed by metal solder, a metal solder layer is formed, secondary sealing of the device is realized, and sealing effect and ultraviolet resistance are improved to a greater extent by sealing twice; because the metal solder layer is heavier than the ultraviolet-resistant material 4, the ultraviolet-resistant material 4 is firstly sealed by the thermosetting glue layer, and then the metal solder layer is used for secondary sealing, so that the influence of sinking caused by overweight of the metal solder layer is avoided.
In one embodiment, the substrate 1 is a metal substrate or a ceramic substrate.
Specifically, as shown in fig. 2 and 4, a step 11 is provided on the substrate 1 to mount the quartz lens 3.
In one embodiment, the step is a circular step, and similarly, the quartz lens 3 is cylindrical, the diameter of the quartz lens 3 is smaller than or equal to the diameter of the side wall of the step 11, the side wall of the step 11 is provided with the metal coating 6, and the side wall of the quartz lens 3 is provided with the metal coating 6. The quartz lens 3 and the substrate 1 are both sealed by inorganic metal solder, so that the air tightness and the sealing performance have good effects, and the sealing effect and the ultraviolet resistance are further ensured.
In one embodiment, when the stepped through hole 31 is provided at the edge of the quartz lens 3, the sidewall of the stepped through hole 31 is also provided with the metal plating layer 6, thereby ensuring airtightness and sealability between the substrate 1 and the quartz lens 3.
In one embodiment, the metal plating layer 6 is provided only on the side wall of the upper layer of the stepped through-hole 31.
In one embodiment, the metal plating layer 6 is made of gold, silver, tin, etc., by way of example and not limitation.
And a gap is not formed between the quartz lens 3 and the ultraviolet-resistant material 4 or exists between the quartz lens and the ultraviolet-resistant material.
In one embodiment, the ultraviolet-resistant material 4 is filled in the cavity 12 of the substrate 1, so that the upper surface of the ultraviolet-resistant material 4 is attached to the lower surface of the quartz lens 3, and therefore no gap is formed between the quartz lens 3 and the ultraviolet-resistant material 4.
In one embodiment, the uv-resistant material 4 is not filled in the cavity 12 of the substrate 1, so that there is a gap between the upper surface of the uv-resistant material 4 and the lower surface of the quartz lens 3.
One surface of the quartz lens 3 facing the ultraviolet-resistant material 4 is a convex surface or a plane, and one surface of the ultraviolet-resistant material 4 facing the quartz lens 3 is a concave surface or a plane. In one embodiment, when the surface of the quartz lens 3 facing the substrate 1 is a convex surface, the surface of the ultraviolet-resistant material 4 facing the quartz lens 3 may be a concave surface, and the convex surface of the quartz lens 3 is matched with the concave surface of the ultraviolet-resistant material 4, so as to ensure that no gap exists between the quartz lens 3 and the ultraviolet-resistant material 4; similarly, when one surface of the quartz lens 3 facing the substrate 1 is a plane, one surface of the ultraviolet-resistant material 4 facing the quartz lens 3 can also be a plane, and the plane of the quartz lens 3 is matched with the plane of the ultraviolet-resistant material 4, so that no gap is formed between the quartz lens 3 and the ultraviolet-resistant material 4, no gas is generated between the quartz lens 3 and the ultraviolet-resistant material 4, and the sealing performance and reliability are ensured by improving the structure of the quartz lens 3.
In one embodiment, the radian of the convex surface of the quartz lens 3 is more than 0 and less than 1.
According to the deep ultraviolet LED device provided by the embodiment of the invention, the light-emitting element 2 is arranged in the cavity 12, the cavity 12 of the substrate 1 is filled with the ultraviolet-resistant material 4, and the ultraviolet-resistant material 4 is wrapped in the light-emitting element 2, so that the situation that the total reflection is excessive due to the fact that ultraviolet rays generated by the light-emitting element 2 directly irradiate the air is avoided, the overall light-emitting efficiency of the device is improved, the brightness is improved to a large extent, the heat conductivity of the ultraviolet-resistant material 4 is many times higher than that of the air, the heat dissipation effect of the deep ultraviolet LED device is improved, and the service life of the device in a severe environment; after filling the ultraviolet-resistant material 4 in the cavity 12 of the substrate 1, placing the quartz lens 3 and the step through hole 31 on the quartz lens 3 on the substrate 1 for releasing the redundant ultraviolet-resistant material 4 to ensure that the quartz lens 3 and the ultraviolet-resistant material 4 have no gap; the arrangement of the convex surface of the quartz lens 3 ensures that no gas is generated between the ultraviolet-resistant material 4 and the quartz lens 3, and the sealing performance and reliability are ensured by improving the structure of the quartz lens 3; after the redundant ultraviolet-resistant material 4 is released, the first sealing layer 51 is firstly sealed on the ultraviolet-resistant material 4, and then the second sealing layer 52 is sealed on the first sealing layer 51, so that a good sealing effect and ultraviolet resistance can be achieved, and as the second sealing layer 52 is heavier than the ultraviolet-resistant material 4, the first sealing layer 51 is firstly used for sealing the step through hole 31, and then the second sealing layer 52 is used for sealing the step through hole 31, so that the influence of sinking caused by the overweight of the second sealing layer 52 is avoided; the side wall of the quartz lens 3 and the side wall of the step 11 of the substrate 1 are both sealed by inorganic metal solders, so that the air tightness and the sealing performance have good effects, and the sealing effect and the ultraviolet resistance are further ensured.
In order to solve the technical problem mentioned above, an embodiment of the present invention further provides a manufacturing method of a deep ultraviolet LED device, which adopts the following technical scheme:
a manufacturing method of a deep ultraviolet LED device is based on the deep ultraviolet LED device and comprises the following steps:
filling the cavity 12 of the substrate 1 with the ultraviolet-resistant material 4;
mounting a quartz lens 3 on a substrate 1;
the space between the substrate 1 and the quartz lens 3 is sealed to form a sealed structure 5.
Specifically, at first, prepare the base plate 1 of taking step 11, the lateral wall of step 11 is provided with metal coating 6, install light emitting component 2 on base plate 1, then pack resistant ultraviolet material 4 in the cavity 12 of base plate 1, resistant ultraviolet material 4 is polydimethylsiloxane, and make the top surface and the 11 bottoms of step of resistant ultraviolet material 4 flush, fill resistant ultraviolet material 4 through the cavity 12 of base plate 1, the light-emitting efficiency of deep ultraviolet LED device has been improved greatly, add resistant ultraviolet material 4 and do not add resistant ultraviolet material 4 and compare, luminance promotes about 50% or so. The heat conductivity of the ultraviolet-resistant material 4 is many times higher than that of air, so that the heat dissipation effect of the deep ultraviolet LED device is improved, and the service life of the device in a severe environment is prolonged;
the method comprises the steps of preparing a quartz lens 3 with a convex surface at the bottom, enabling the convex surface to be slightly convex downwards, enabling the radian to be larger than 0 and less than 1, ensuring that no gap or gas is generated between an ultraviolet-resistant material 4 and the quartz lens 3, enabling a step through hole 31 to be formed in the quartz lens 3, and enabling the side wall of a step 11 to be provided with a metal plating layer 6. Placing the quartz lens 3 on the step 11 of the substrate 1, so that the redundant ultraviolet-resistant material 4 overflows from the step through hole 31 of the quartz lens 3, and ensuring that the quartz lens 3 and the ultraviolet-resistant material 4 have no gap;
a layer of first sealant with the density lower than that of the ultraviolet-resistant material 4 is dispensed in the step through hole 31, and the first sealant 51 is formed by curing the glue, so that the primary sealing of the device is realized;
then forming a second sealing layer 52 on the first sealing layer 51 to realize secondary sealing of the device; through twice sealing, the sealing effect and the ultraviolet resistance are greatly improved.
Specifically, the first sealing layer 51 is a thermosetting glue layer, and the second sealing layer 52 is a metal solder layer.
According to the manufacturing method of the deep ultraviolet LED device, the light-emitting element 2 is arranged in the cavity 12, the ultraviolet-resistant material 4 is filled in the cavity 12 of the substrate 1, the ultraviolet-resistant material 4 is wrapped in the light-emitting element 2, the situation that total reflection is excessive due to the fact that ultraviolet rays generated by the light-emitting element 2 directly irradiate the air is avoided, the overall light-emitting efficiency of the device is improved, the brightness is improved to a large extent, the heat conductivity of the ultraviolet-resistant material 4 is many times higher than that of the air, the heat dissipation effect of the deep ultraviolet LED device is improved, and therefore the service life of the device in a severe environment is prolonged; after filling the ultraviolet-resistant material 4 in the cavity 12 of the substrate 1, placing the quartz lens 3 and the step through hole 31 on the quartz lens 3 on the substrate 1 for releasing the redundant ultraviolet-resistant material 4 to ensure that the quartz lens 3 and the ultraviolet-resistant material 4 have no gap; the arrangement of the convex surface of the quartz lens 3 ensures that no gas is generated between the ultraviolet-resistant material 4 and the quartz lens 3, and the sealing performance and reliability are ensured by improving the structure of the quartz lens 3; after the redundant ultraviolet-resistant material 4 is released, the first sealing layer 51 is firstly sealed on the ultraviolet-resistant material 4, and then the second sealing layer 52 is sealed on the first sealing layer 51, so that a good sealing effect and ultraviolet resistance can be achieved, and as the second sealing layer 52 is heavier than the ultraviolet-resistant material 4, the first sealing layer 51 is firstly used for sealing the step through hole 31, and then the second sealing layer 52 is used for sealing the step through hole 31, so that the influence of sinking caused by the overweight of the second sealing layer 52 is avoided; the side wall of the quartz lens 3 and the side wall of the step 11 of the substrate 1 are both sealed by inorganic metal solder, so that the air tightness and the sealing performance have good effects, and the sealing effect and the ultraviolet resistance are further ensured.
It is to be understood that the above-described embodiments are merely illustrative of some, but not restrictive, of the broad invention, and that the appended drawings illustrate preferred embodiments of the invention without limiting its scope. This invention may be embodied in many different forms and, on the contrary, these embodiments are provided so that this disclosure will be thorough and complete. Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and modifications can be made, and equivalents may be substituted for elements thereof. All equivalent structures made by using the contents of the specification and the attached drawings of the invention can be directly or indirectly applied to other related technical fields, and are also within the protection scope of the patent of the invention.
Claims (11)
1. A deep ultraviolet LED device is characterized in that,
the LED lamp comprises a substrate, a light-emitting element, a quartz lens, an ultraviolet-resistant material and a sealing structure;
the substrate is provided with a cavity, the light-emitting element is arranged in the cavity, the ultraviolet-resistant material is filled in the cavity, the bond energy of the ultraviolet-resistant material is 450-900 kJ/mol and is greater than the energy of ultraviolet rays emitted by the light-emitting element, the quartz lens is arranged on one surface of the cavity, the substrate is provided with a step for mounting the quartz lens, and the sealing structure is arranged between the substrate and the quartz lens.
2. The deep ultraviolet LED device of claim 1,
the quartz lens is provided with a step through hole, and the step through hole is communicated with the cavity.
3. The deep ultraviolet LED device of claim 1,
the sealing structure comprises a first sealing layer and a second sealing layer which are arranged between the side wall of the quartz lens and the side wall of the step, the first sealing layer is sealed on the ultraviolet-resistant material, the second sealing layer is sealed on the first sealing layer, and the density of the first sealing layer is lower than that of the ultraviolet-resistant material.
4. The deep ultraviolet LED device of claim 2,
the sealing structure comprises a first sealing layer and a second sealing layer which are arranged in the step through hole, the first sealing layer is sealed on the ultraviolet-resistant material, the second sealing layer is sealed on the first sealing layer, and the density of the first sealing layer is lower than that of the ultraviolet-resistant material.
5. The deep ultraviolet LED device of claim 1,
and a metal coating is arranged on the side wall of the step, and a metal coating is arranged on the side wall of the quartz lens.
6. The deep ultraviolet LED device of claim 1,
one surface of the quartz lens, facing the ultraviolet-resistant material, is a convex surface or a plane, and one surface of the ultraviolet-resistant material, facing the quartz lens, is a concave surface or a plane.
7. The deep ultraviolet LED device of claim 6,
the radian of the convex surface of the quartz lens is larger than 0 and smaller than 1.
8. The deep ultraviolet LED device according to claim 3 or 4,
the first sealing layer is a thermosetting glue layer, and the second sealing layer is a metal solder layer.
9. The deep ultraviolet LED device of claim 1,
the ultraviolet-resistant material is polydimethylsiloxane or polydimethylsiloxane mixed with silicon dioxide powder.
10. The deep ultraviolet LED device of claim 1,
the wavelength of the ultraviolet rays emitted by the light-emitting element is 260 nm-410 nm.
11. A deep ultraviolet LED device manufacturing method based on the deep ultraviolet LED device according to any one of claims 1 to 10, characterized by comprising the steps of:
filling ultraviolet-resistant materials in the cavity of the substrate;
mounting a quartz lens on a substrate;
and sealing between the substrate and the quartz lens to form a sealing structure.
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