CN204088362U - A kind of chip upside-down mounting type LED silk - Google Patents
A kind of chip upside-down mounting type LED silk Download PDFInfo
- Publication number
- CN204088362U CN204088362U CN201420393686.0U CN201420393686U CN204088362U CN 204088362 U CN204088362 U CN 204088362U CN 201420393686 U CN201420393686 U CN 201420393686U CN 204088362 U CN204088362 U CN 204088362U
- Authority
- CN
- China
- Prior art keywords
- chip
- led
- bar shaped
- circuit layer
- shaped substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical group O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 7
- 241000218202 Coptis Species 0.000 abstract description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a kind of chip upside-down mounting type LED silk, this LED silk comprises bar shaped substrate, described bar shaped substrate surface be attached with circuit layer and both ends are attached with the electrode be connected with circuit layer respectively, be provided with some to circuit node in described circuit layer, often pair of circuit node be connected to flip-chip LED; Be coated with encapsulation glue-line in the periphery at described bar shaped substrate surface, circuit layer and flip-chip LED place, the electrode at described both ends exposes to encapsulation glue-line.The utility model LED silk is owing to being employing LED crystal covered chip (i.e. flip-chip), the electrode direction of chip down, can directly weld in the circuit board, gold thread need not be welded, reduce the input of production equipment, and the heat-conducting area between LED flip chip and bar shaped substrate increases, be conducive to improving heat transfer efficiency and radiating effect, reduce LED chip light decay, increase the service life.
Description
Technical field:
The utility model relates to LED lamp technical field, refers in particular to a kind of chip upside-down mounting type LED silk.
Background technology:
The general technological process of production of current LED silk is: adopted by LED chip bonder to be fixed on sapphire support, sapphire support two ends silver slurry silk-screen top electrode, utilize gold thread that electrode and chip are connected or parallel connection LED chip with bonding equipment again, then chip and sapphire support encapsulate by allotment fluorescent material and silica gel.Adopt this frame mode to make LED silk to need to be utilized by LED chip bonder to be fixed on sapphire support, then use gold thread to weld with bonding equipment, cause fabrication processing complicated, cost of goods manufactured is higher, and yields is lower.And this LED lamp bar operationally, LED chip is the pin by gold thread, heat being delivered to lamp pearl, then transfers heat on wiring board by the pin of LED lamp bead, heat-conducting area is very little, heat can not effectively distribute, and cause LED chip light decay higher, product reliability is poor.
Utility model content:
The purpose of this utility model is the above-mentioned weak point overcoming prior art, provides a kind of chip upside-down mounting type LED silk.
The utility model realizes the technical scheme that its object adopts: a kind of chip upside-down mounting type LED silk, this LED silk comprises bar shaped substrate, described bar shaped substrate surface be attached with circuit layer and both ends are attached with the electrode be connected with circuit layer respectively, be provided with some to circuit node in described circuit layer, often pair of circuit node be connected to N pole and the P pole of flip-chip; Be coated with encapsulation glue-line in the periphery at described bar shaped substrate surface, circuit layer and flip-chip place, the electrode at described both ends exposes to encapsulation glue-line.
Preferably, described bar shaped substrate is borax glass substrate.
Circuit in described circuit layer be tandem or parallel or string and join formula altogether.
Described circuit layer is starched printing-sintering for temperature silver in employing and is formed.
Fluorescent material particulate is mixed with in described encapsulation glue-line.
The length, width and height size range of described bar shaped substrate is (10mm-100mm) × (0.5mm-2mm) × (0.01mm-0.5mm).
The utility model LED silk is owing to being employing LED crystal covered chip (i.e. flip-chip), the electrode direction of chip down, can directly weld in the circuit board, gold thread need not be welded, reduce the input of production equipment, and the heat-conducting area between LED flip chip and bar shaped substrate increases, be conducive to improving heat transfer efficiency and radiating effect, reduce LED chip light decay, increase the service life.And the utility model adopts integral type encapsulating structure, decrease single for the LED chip production technology being first packaged into LED lamp bead, reduce production cost, make the manufacture craft of whole LED lamp bar simpler, simultaneously, because wiring board is the superfine electrical connection circuit that borax glass makes, make lamp bar two sides can printing opacity, light-emitting zone be also larger.
Accompanying drawing illustrates:
Fig. 1 is the structural representation of the utility model chip upside-down mounting type LED silk.
Embodiment:
Below in conjunction with specific embodiments and the drawings, the utility model is further illustrated.
As shown in Figure 1, described in the utility model is a kind of chip upside-down mounting type LED silk, this LED silk comprises bar shaped substrate 1, described bar shaped substrate 1 surface be attached with circuit layer 2 and both ends are attached with the electrode 21 be connected with circuit layer 2 respectively, be provided with some to circuit node 22 in described circuit layer 2, often pair of circuit node 22 connect respectively N pole and the P pole of flip-chip LED3; Be coated with encapsulation glue-line 4 in the periphery at described bar shaped substrate surface 1, circuit layer 2 and flip-chip LED3 place, the electrode 21 at described both ends exposes to encapsulation glue-line 4, is energized to be connected with external circuit.
Preferably, described bar shaped substrate 1 is borax glass substrate, and borax glass two sides is transparent, and flip LED chips luminescence can comprehensively be penetrated.Circuit in described circuit layer 2 be tandem or parallel or string and join formula altogether, can design as required.Described circuit layer 2 is for adopting the printing of silver slurry, and more than 300 DEG C, temperature sintering is formed.The circuit layer 2 of described bar shaped substrate 1 also can utilize the modes such as plating, evaporation and etching to make.Be mixed with fluorescent material particulate 41 in described encapsulation glue-line 4, the color of fluorescent material particulate 41 can be selected as required, and it can make LED silk send the light of corresponding color, more attractive in appearance during the work of LED silk.The length, width and height size range of described bar shaped substrate 1 is (10mm-100mm) × (0.5mm-2mm) × (0.01mm-0.5mm), can certainly size Selection as required make.
The utility model adopts following steps to make:
Step one: make wiring board, namely printing silver slurry on borax glass substrate surface, then uses high temperature sintering, to form circuit layer; Overallly can print during printing, finally cut into bar shaped again;
Step 2: carry out die bond on the wiring board made, described die bond is fixed on the node of circuit layer by LED flip chip solder(ing) paste or other colloids, the electrode of LED crystal covered chip and circuit layer formed and is electrically connected;
Step 3: can utilize production equipment by the welding of other electronic devices and components in the circuit board before step 2, also can fix electronic devices and components solder(ing) paste or other colloids in the circuit board while fixing crystal covered chip or afterwards;
Step 4: cross Reflow Soldering or wave-soldering, welds crystal covered chip and electronic devices and components in the circuit board;
Step 5: modulation encapsulation glue, fluorescent material particulate is added in the requirement according to different colour temperatures in packaging plastic;
Step 6: be coated with deployed packaging plastic on the wiring board welding LED crystal covered chip and electronic devices and components thereof;
Step 7: the wiring board of coated packaging plastic is carried out toasting, check and packing.
The utility model LED silk is owing to being employing LED crystal covered chip, the electrode direction of chip down, can directly weld in the circuit board, gold thread need not be welded, reduce the input of production equipment, and the heat-conducting area between LED flip chip and bar shaped substrate increases, be conducive to improving heat transfer efficiency and radiating effect, reduce LED chip light decay, increase the service life.And the utility model adopts integral type encapsulating structure, decrease single for the LED chip production technology being first packaged into LED lamp bead, reduce production cost, make the manufacture craft of whole LED lamp bar simpler, simultaneously, because wiring board is the superfine electrical connection circuit that borax glass makes, make lamp bar two sides can printing opacity, light-emitting zone be also larger.
Above-described embodiment; a just example of the present utility model; be not for limiting enforcement of the present utility model and interest field, all equivalences done according to the utility model patent protection scope change and modify, and all should be included in the utility model claim.
Claims (6)
1. a chip upside-down mounting type LED silk, it is characterized in that: this LED silk comprises bar shaped substrate, circuit layer is attached with and both ends are attached with the electrode be connected with circuit layer respectively at described bar shaped substrate surface, be provided with some to circuit node in described circuit layer, often pair of circuit node connect respectively N pole and the P pole of a flip-chip LED; Be coated with encapsulation glue-line in the periphery at described bar shaped substrate surface, circuit layer and flip-chip LED place, the electrode at described both ends exposes to encapsulation glue-line.
2. chip upside-down mounting type LED silk according to claim 1, is characterized in that: described bar shaped substrate is borax glass substrate.
3. chip upside-down mounting type LED silk according to claim 1, is characterized in that: the circuit in described circuit layer be tandem or parallel or string and join formula altogether.
4. the chip upside-down mounting type LED silk according to claim 1 or 3, is characterized in that: described circuit layer is formed for adopting silver slurry printing-sintering.
5. chip upside-down mounting type LED silk according to claim 1, is characterized in that: be mixed with fluorescent material particulate in described encapsulation glue-line.
6. chip upside-down mounting type LED silk according to claim 1, is characterized in that: the length, width and height size range of described bar shaped substrate is (10mm-100mm) × (0.5mm-2mm) × (0.01mm-0.5mm).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420393686.0U CN204088362U (en) | 2014-07-16 | 2014-07-16 | A kind of chip upside-down mounting type LED silk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420393686.0U CN204088362U (en) | 2014-07-16 | 2014-07-16 | A kind of chip upside-down mounting type LED silk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204088362U true CN204088362U (en) | 2015-01-07 |
Family
ID=52181039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420393686.0U Expired - Fee Related CN204088362U (en) | 2014-07-16 | 2014-07-16 | A kind of chip upside-down mounting type LED silk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204088362U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105240702A (en) * | 2015-10-16 | 2016-01-13 | 中山市泓昌光电科技有限公司 | LED light source structure of inverted COB |
| CN105782789A (en) * | 2016-04-29 | 2016-07-20 | 郭垣成 | FPC/COB light band and manufacturing method thereof |
-
2014
- 2014-07-16 CN CN201420393686.0U patent/CN204088362U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105240702A (en) * | 2015-10-16 | 2016-01-13 | 中山市泓昌光电科技有限公司 | LED light source structure of inverted COB |
| CN105782789A (en) * | 2016-04-29 | 2016-07-20 | 郭垣成 | FPC/COB light band and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20160716 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |