CN103337578A - Method and structure of upright-installed dual-electrode chip inverted pasting application - Google Patents
Method and structure of upright-installed dual-electrode chip inverted pasting application Download PDFInfo
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- CN103337578A CN103337578A CN2013101986757A CN201310198675A CN103337578A CN 103337578 A CN103337578 A CN 103337578A CN 2013101986757 A CN2013101986757 A CN 2013101986757A CN 201310198675 A CN201310198675 A CN 201310198675A CN 103337578 A CN103337578 A CN 103337578A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000007787 solid Substances 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 241000218202 Coptis Species 0.000 abstract description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 4
- 238000012858 packaging process Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a method and a structure of an upright-installed dual-electrode chip inverted pasting application. The upright-installed dual-electrode chip inverted pasting application structure includes a stand and an upright-installed dual-electrode chip. A positive pole of the chip is arranged opposite to a positive pole of the stand; a negative pole of the chip is arranged opposite to a negative pole of the stand; the positive pole and the negative pole of the chip are die-bonded on the stand; a conductive die bond material for connecting and fixing the chip and the stand is arranged between the positive and negative poles of the chip and the positive and negative poles of the stand. In the application method of the invention, the die bond is achieved by the electrodes of the chips being directed to the stand or to a PCB, wherein the conductive die bond material is used to carry out the die bond. According to the die bond method of the invention, the gold thread structure and the wiring process are eliminated; the conductive die bond material is used directly to connect the electrodes of the chip and the electrodes of the stand; the packaging structure and the packaging process are simplified; the complicated wiring process is omitted; the die bond time is reduced; and the material and labor cost are saved.
Description
[technical field]
The present invention relates to the lighting source field, relate in particular to the anti-sealing packing technique field of formal dress bipolar electrode luminescence chip.
[background technology]
What relate generally in the present invention is that a kind of top layer is the formal dress surface bipolar electrode chip of P layer, and this chip has all obtained using widely at lighting fields such as showing class, class backlight, indication class, view class, lamp decoration class at present.This chip need pass through the conventional package process, could realize using.Conventional method for packing is to pass through this chip artificial or the automatic pick-up chip process of machinery, and chip is placed on the support in electrode mode up.In the predetermined position of placing chip of support, put glue (generally being the crystal-bonding adhesive body of argentiferous or insulation class) in advance, then chip alignment point glue position is placed, and be cured.This moment chip contact support down with substrate, chip electrode towards.And then carry out routing procedure, gold thread or alloy wire one end melt solid on the electrode of chip the other end be connected on the support.Bipolar electrode chip to make a call to two lines as lead after, just can enter down the link of road encapsulating encapsulation.
Above-mentioned method for packing exists following major defect and problem: the one, because the heat dispersion of Sapphire Substrate is poor, and need be too much to the follow-up input of head it off; The 2nd, need two gold threads or alloy wire, both can cause the later stage product in the quality problems of encapsulation and application end, cause yield to reduce, raised cost again; The 3rd, former arts demand has the operation of solid crystalline substance, routing, except solid brilliant machine, wire bonder, also baking oven will be arranged, and also needs curing time about 3 hours.Packaging process complexity, length consuming time, production efficiency are low.
[summary of the invention]
The present invention is directed to above situation and proposed a kind of routing technology, solid brilliant short formal dress bipolar electrode chip-packaging structure of time of omitting, by adopting the anti-processing method of pasting application of formal dress bipolar electrode chip, can omit routing process, cancellation gold thread structure, improve yields, shorten the solid brilliant time, enhance productivity.
The anti-application process that pastes of formal dress bipolar electrode chip involved in the present invention, at support or the solid brilliant material of pcb board point, formal dress bipolar electrode chip is aimed at solid brilliant material position carry out solid brilliant process, it is characterized in that, formal dress bipolar electrode chip carries out solid crystalline substance with its electrode towards support or pcb board direction, finishes can carry out packaging plastic after the solid crystalline substance chip is encapsulated.
Described solid brilliant process is to adopt circuit between energy conduction electrode and the support, and the solid brilliant material of energy fixed chip.
Described solid brilliant process is to adopt tinol as solid brilliant material, process Reflow Soldering chip to be fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
Described solid brilliant process is to adopt elargol as solid brilliant material, and chip is fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
The anti-structure of pasting application process of a kind of formal dress bipolar electrode chip, comprise support and formal dress bipolar electrode chip, chip comprises substrate layer, the N layer, P layer and two electrodes, described substrate layer, N layer and P layer are cascading, and positive pole and two electrodes of negative pole are arranged on the P layer, be provided with the anodal and support negative pole of the support relative with negative pole with the positive pole of formal dress bipolar electrode chip at support, chip is opposite to the support positive pole with its positive pole, chip is solid brilliant on support with its negative pole opposed mounts negative pole, between chip positive pole and support positive pole, between chip negative pole and support negative pole, have the solid brilliant material of conductivity and be connected and fixed chip and support.
Described solid brilliant material is can turning circuit and fixedly connected tinol.
Described solid brilliant material is conductive rubbers such as elargol, and personnel can select to have this character products substitution of the same type according to relevant professional knowledge in the industry, also belong in the technical solution of the present invention.
The present invention adopts formal dress bipolar electrode chip is carried out solid crystalline substance with its electrode towards the mode of support, omitted the routing process, directly just can connect electrode between chip electrode and the support by the solid brilliant material of conductivity, simplified encapsulating structure and packaging technology, omitted loaded down with trivial details routing process and shortened the solid brilliant time, saved material and human cost.
[description of drawings]
Fig. 1 is the anti-combining structure schematic diagram that pastes application structure of one embodiment of the invention formal dress bipolar electrode chip;
Fig. 2 is the anti-component structure schematic diagram that pastes application structure of one embodiment of the invention formal dress bipolar electrode chip.
Wherein: 10, support; 11, support positive pole; 12, support negative pole; 20, chip; 21, substrate layer; 22, N layer; 23, P layer; 24, electrode; 241, chip positive pole; 242, chip negative pole; 30, solid brilliant material.
[embodiment]
Paste application process and structure further describes in detail below in conjunction with the drawings and specific embodiments of the present invention to formal dress bipolar electrode chip of the present invention is counter.
Please refer to accompanying drawing 1: there is shown the anti-structure of pasting application process of a kind of formal dress bipolar electrode chip, this encapsulating structure comprises support 10 and formal dress bipolar electrode chip 20, chip comprises substrate layer 21, N layer 22, P layer 23 and two electrodes 24, described substrate layer 21, N layer 22 and P layer 23 are cascading, and positive pole and two electrodes 24 of negative pole are arranged on the P layer 23, be provided with the support relative with negative pole with the positive pole of formal dress bipolar electrode chip anodal 11 and support negative pole 12 at support 10, chip 20 is opposite to support positive pole 11 with its chip positive pole 241, chip is solid brilliant on support 10 with its chip negative pole 242 opposed mounts negative poles 12, between chip anodal 241 and support positive pole, between chip negative pole 242 and support negative pole, have the solid brilliant material of conductivity and be connected and fixed chip and support.
Described solid brilliant material 30 is can turning circuit and fixedly connected tinol.
Described solid brilliant material 30 is elargol.
The anti-application process that pastes of formal dress bipolar electrode chip, at support or the solid brilliant material of pcb board point, formal dress bipolar electrode chip is aimed at solid brilliant material position carry out solid brilliant process, formal dress bipolar electrode chip carries out solid crystalline substance with its electrode towards support or pcb board direction, finishes can carry out packaging plastic after the solid crystalline substance chip is encapsulated.
Described solid brilliant process is to adopt circuit between energy conduction electrode and the support, and the solid brilliant material of energy fixed chip.
Described solid brilliant process is to adopt tinol as solid brilliant material, process Reflow Soldering chip to be fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
Described solid brilliant process is to adopt elargol as solid brilliant material, and chip is fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
The present invention adopts formal dress bipolar electrode chip is carried out solid crystalline substance with its electrode towards the mode of support, omitted the routing process, direct solid brilliant material by conduction just can be connected the electrode between chip electrode and the support, simplified encapsulating structure and packaging technology, omitted loaded down with trivial details routing process and shortened the solid brilliant time, saved material and human cost.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, refer to any simple modification that above embodiment is done according to the technology of the present invention, equivalent variations and modification all belong in the scope of technical solution of the present invention.
Claims (7)
1. anti-application process that pastes of formal dress bipolar electrode chip, it is characterized in that, at support or the solid brilliant material of pcb board point, formal dress bipolar electrode chip is aimed at solid brilliant material position carry out solid brilliant process, it is characterized in that, formal dress bipolar electrode chip carries out solid crystalline substance with its electrode towards support or pcb board direction, finishes can carry out packaging plastic after the solid crystalline substance chip is encapsulated.
2. according to the anti-application process that pastes of the described formal dress bipolar electrode of claim 1 chip, it is characterized in that described solid brilliant process is to adopt circuit between energy conduction electrode and the support, and the solid brilliant material of energy fixed chip.
3. according to the anti-application process that pastes of the described formal dress bipolar electrode of claim 1 chip, it is characterized in that, described solid brilliant process is to adopt tinol as solid brilliant material, process Reflow Soldering chip to be fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
4. according to the anti-application process that pastes of the described formal dress bipolar electrode of claim 1 chip, it is characterized in that, described solid brilliant process is to adopt elargol as solid brilliant material, and chip is fixed on the support, finishes conducting chip electrode and support circuitry simultaneously and chip is fixed on double action on the support.
5. anti-structure of pasting application process of formal dress bipolar electrode chip, comprise support and formal dress bipolar electrode chip, chip comprises substrate layer, the N layer, P layer and two electrodes, described substrate layer, N layer and P layer are cascading, and positive pole and two electrodes of negative pole are arranged on the P layer, be provided with the anodal and support negative pole of the support relative with negative pole with the positive pole of formal dress bipolar electrode chip at support, chip is opposite to the support positive pole with its positive pole, chip is solid brilliant on support with its negative pole opposed mounts negative pole, between chip positive pole and support positive pole, between chip negative pole and support negative pole, have the solid brilliant material of conductivity and be connected and fixed chip and support.
6. according to the anti-structure of pasting application process of the described formal dress bipolar electrode of claim 5 chip, it is characterized in that described solid brilliant material is can turning circuit and fixedly connected tinol.
7. according to the anti-structure of pasting application process of the described formal dress bipolar electrode of claim 5 chip, it is characterized in that described solid brilliant material is elargol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101986757A CN103337578A (en) | 2013-05-24 | 2013-05-24 | Method and structure of upright-installed dual-electrode chip inverted pasting application |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013101986757A CN103337578A (en) | 2013-05-24 | 2013-05-24 | Method and structure of upright-installed dual-electrode chip inverted pasting application |
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| CN103337578A true CN103337578A (en) | 2013-10-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465634A (en) * | 2014-12-04 | 2015-03-25 | 中山市川祺光电科技有限公司 | Chip pasting structure of SMD LED lamp and manufacturing method thereof |
| CN109742213A (en) * | 2019-01-02 | 2019-05-10 | 东莞市科明光电有限公司 | A kind of built-in LED patch plug-in unit lamp packaging technology |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567411A (en) * | 2009-05-26 | 2009-10-28 | 晶科电子（广州）有限公司 | Flip-chip integrated encapsulation structure of LED and method thereof |
| JP2011222830A (en) * | 2010-04-12 | 2011-11-04 | Sony Chemical & Information Device Corp | Method of manufacturing light-emitting device |
| CN102354723A (en) * | 2011-10-24 | 2012-02-15 | 南昌黄绿照明有限公司 | Flip semiconductor luminescent device and manufacturing method thereof |
| CN102891240A (en) * | 2012-09-18 | 2013-01-23 | 惠州雷曼光电科技有限公司 | Light emitting diode (LED) with inverted structure and manufacturing method thereof |
| CN203351645U (en) * | 2013-05-24 | 2013-12-18 | 袁灵 | Structure for reverse pasting application of double-electrode power chip |
-
2013
- 2013-05-24 CN CN2013101986757A patent/CN103337578A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567411A (en) * | 2009-05-26 | 2009-10-28 | 晶科电子（广州）有限公司 | Flip-chip integrated encapsulation structure of LED and method thereof |
| JP2011222830A (en) * | 2010-04-12 | 2011-11-04 | Sony Chemical & Information Device Corp | Method of manufacturing light-emitting device |
| CN102354723A (en) * | 2011-10-24 | 2012-02-15 | 南昌黄绿照明有限公司 | Flip semiconductor luminescent device and manufacturing method thereof |
| CN102891240A (en) * | 2012-09-18 | 2013-01-23 | 惠州雷曼光电科技有限公司 | Light emitting diode (LED) with inverted structure and manufacturing method thereof |
| CN203351645U (en) * | 2013-05-24 | 2013-12-18 | 袁灵 | Structure for reverse pasting application of double-electrode power chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465634A (en) * | 2014-12-04 | 2015-03-25 | 中山市川祺光电科技有限公司 | Chip pasting structure of SMD LED lamp and manufacturing method thereof |
| CN109742213A (en) * | 2019-01-02 | 2019-05-10 | 东莞市科明光电有限公司 | A kind of built-in LED patch plug-in unit lamp packaging technology |
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| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN LEDMY CO., LTD. Free format text: FORMER OWNER: YUAN LING Effective date: 20141209 Free format text: FORMER OWNER: WANG JINGWEI Effective date: 20141209 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20141209 Address after: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Applicant after: SHENZHEN LEDMY CO., LTD. Address before: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building five floor West Applicant before: Yuan Ling Applicant before: Wang Jingwei |
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| CB02 | Change of applicant information |
Address after: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Applicant after: SHENZHEN LEDMY CO., LTD. Address before: Baoan District Shiyan street of Shenzhen city in Guangdong Province on the 518000 house community north loop chanf Technology Park B building three or four, five floor Applicant before: SHENZHEN LEDMY CO., LTD. |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131002 |