CN110335863B - LED support packaging structure and packaging technology - Google Patents
LED support packaging structure and packaging technology Download PDFInfo
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- CN110335863B CN110335863B CN201910597644.6A CN201910597644A CN110335863B CN 110335863 B CN110335863 B CN 110335863B CN 201910597644 A CN201910597644 A CN 201910597644A CN 110335863 B CN110335863 B CN 110335863B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 238000012536 packaging technology Methods 0.000 title description 3
- 238000012858 packaging process Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 161
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000000084 colloidal system Substances 0.000 claims description 8
- 239000008393 encapsulating agent Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 131
- 239000000463 material Substances 0.000 description 36
- 239000003292 glue Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED support packaging structure and an LED support packaging process, and relates to the field of LED packaging. The package structure includes: LED support, control chip and luminous wafer. According to the LED support, the control chip is fixed on the support electrode of the LED support and is positioned in the center of the LED support, and the light-emitting chip is fixed on other support electrodes of the LED support and is close to the control chip, so that the problem that the welding wires are longer due to the fact that the distance between the control chip and the light-emitting chip and the distance between the light-emitting chip and the support electrode are longer in the prior art are solved, the distances between the light-emitting chip and the control chip are shorter, the length of the welding wires is shortened, and the cost is reduced.
Description
Technical Field
The invention relates to the field of LED packaging, in particular to an LED bracket packaging structure and an LED bracket packaging process.
Background
As shown in fig. 1, the conventional LED support package is manufactured by: (1) Firstly, fixing an IC control chip 1-1 and a luminous wafer 1-2 on a bracket by using die bond glue in a die bond area of the bracket; (2) Planting conductive metal balls on the IC control chip 1-1 and the luminous wafer electrode, and pulling the conductive metal wires 1-4, and connecting the IC control chip 1-1 with the luminous wafer electrode and the bracket electrode 1-3 to form a power-on loop; (3) sealing the light-transmitting colloid 1-5 in the bracket bowl cup.
Referring to fig. 1, in the conventional LED support design, since the IC control chip 1-1 is disposed on the end of one support electrode that is longer, the distance between the IC control chip 1-1 and the light emitting chip 1-2 and other support electrodes is longer, and the bonding wires are longer, so that it is not easy to arrange and bond the conductive metal wires 1-4, and the production cost is increased. In addition, the connection position of the support electrode 1-3 and the conductive metal wire 1-4 is easily affected by environmental temperature and humidity changes in the use process, so that the connection position of the support electrode 1-3 and the conductive metal wire 1-4 is disconnected, the problems of open circuit, non-bright LEDs and the like of an electrified loop are caused, and the reliability of the product is poor.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide an LED bracket packaging structure and packaging process, which are beneficial to shortening bonding wires, reducing cost and improving product quality.
The technical scheme adopted by the invention is as follows:
in a first aspect, the present invention provides an LED stand-off package structure, comprising:
the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, wherein the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
the control chip is fixed on the second support electrode and is positioned at the center of the LED support, and the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode are all connected with the control chip;
the light-emitting wafer comprises a first light-emitting wafer, a second light-emitting wafer and a third light-emitting wafer, the first light-emitting wafer is fixed on the fourth support electrode at a position close to the control chip and is connected with the control chip, the second light-emitting wafer is fixed on the fifth support electrode at a position close to the control chip and is connected with the control chip, and the third light-emitting wafer is fixed on the sixth support electrode at a position close to the control chip and is connected with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth bracket electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
Further, the method comprises the steps of,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm;
and a wafer negative electrode of the third light-emitting wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm.
Further, the method comprises the steps of,
the first bracket electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm;
the third bracket electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm;
the fourth bracket electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 and 1.4 mm.
Further, the method comprises the steps of,
the fourth bracket electrode is connected with the fifth bracket electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm;
the fifth bracket electrode is connected with the positive electrode of the third luminescent wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm.
Further, the connection part of the fourth conductive metal wire and the first bracket electrode, the connection part of the fifth conductive metal wire and the third bracket electrode, the connection part of the sixth conductive metal wire and the fourth bracket electrode, the connection part of the seventh conductive metal wire and the sixth bracket electrode, the connection part of the eighth conductive metal wire and the fourth bracket electrode and the fifth bracket electrode, and the connection part of the ninth conductive metal wire and the fifth bracket electrode are all provided with conductive adhesive.
Further, the LED support packaging structure further comprises a light-transmitting packaging colloid, wherein the light-transmitting packaging colloid is used for packaging the LED support, the control chip and the light-emitting wafer.
In a second aspect, the present invention provides an LED support packaging process, including the steps of:
providing an LED support, wherein the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
fixing a control chip on the second support electrode and positioned at the central position of the LED support, and connecting the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode with the control chip;
fixing a first light-emitting wafer on the fourth bracket electrode at a position close to the control chip and connecting the first light-emitting wafer with the control chip;
fixing a second luminous wafer on the fifth bracket electrode at a position close to the control chip and connecting the second luminous wafer with the control chip;
fixing a third light-emitting wafer on the sixth support electrode at a position close to the control chip and connecting the third light-emitting wafer with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth bracket electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
Further, the method comprises the steps of,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm;
the wafer negative electrode of the third luminous wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm;
the first bracket electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm;
the third bracket electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm;
the fourth bracket electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 and 1.4 mm;
the fourth bracket electrode is connected with the fifth bracket electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm;
the fifth bracket electrode is connected with the positive electrode of the third luminescent wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm.
Further, the LED stand packaging process further includes:
and conductive adhesive is dripped at the connection part of the fourth conductive metal wire and the first bracket electrode, the connection part of the fifth conductive metal wire and the third bracket electrode, the connection part of the sixth conductive metal wire and the fourth bracket electrode, the connection part of the seventh conductive metal wire and the sixth bracket electrode, the connection part of the eighth conductive metal wire and the fourth bracket electrode and the fifth bracket electrode and the connection part of the ninth conductive metal wire and the fifth bracket electrode.
Further, the LED stand packaging process further includes:
and packaging the LED bracket, the control chip and the light-emitting wafer by using a light-transmitting packaging colloid.
The beneficial effects of the invention are as follows:
according to the LED support, the control chip is fixed on the support electrode of the LED support and is positioned in the center of the LED support, and the light-emitting chip is fixed on other support electrodes of the LED support and is close to the control chip, so that the problem that the welding wires are longer due to the fact that the distance between the control chip and the light-emitting chip and the distance between the light-emitting chip and the support electrode are longer in the prior art are solved, the distances between the light-emitting chip and the control chip are shorter, the length of the welding wires is shortened, and the cost is reduced.
In addition, the invention increases the binding force between the conductive metal wire and the bracket electrode by adding the conductive adhesive at the joint of the conductive metal wire and the bracket electrode, so that the conductive metal wire is not easy to separate from the bracket electrode, and the product quality is improved.
Drawings
FIG. 1 is a schematic flow chart of a prior art LED support packaging process;
fig. 2 is a schematic structural diagram of an embodiment of an LED support package structure according to the present invention.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
Example 1
The present embodiment provides an LED support package structure, as shown in fig. 2, including:
LED support 1, the LED support 1 includes a first support electrode 11, a second support electrode 12, a third support electrode 13, a fourth support electrode 14, a fifth support electrode 15, and a sixth support electrode 16. The fourth support electrode 14 is connected to the fifth support electrode 15, the first support electrode 11 is connected to the ground pin 111 of the LED support 1, the second support electrode 12 is connected to the NC pin 112 of the LED support 1, the third support electrode 13 is connected to the signal input pin 113 of the LED support 1, the fourth support electrode 14 is connected to the power supply pin 114 of the LED support 1, and the sixth support electrode 16 is connected to the signal output pin 116 of the LED support 1.
The control chip 2, the control chip 2 is fixed on the second support electrode 12 and is located in the central position of the LED support 1, and the first support electrode 11, the third support electrode 13, the fourth support electrode 14 and the sixth support electrode 16 are all connected with the control chip 2.
Light emitting wafer 3, light emitting wafer 3 includes first light emitting wafer 31, second light emitting wafer 32, and third light emitting wafer 33. The first light emitting wafer 31 is fixed on the fourth support electrode 14 at a position close to the control chip 2 and is connected with the control chip 2, the second light emitting wafer 32 is fixed on the fifth support electrode 15 at a position close to the control chip 2 and is connected with the control chip 2, and the third light emitting wafer 33 is fixed on the sixth support electrode 16 at a position close to the control chip 2 and is connected with the control chip 2. The third light emitting wafer 33 is a bipolar wafer, the positive electrode of the third light emitting wafer 33 is connected with the fifth bracket electrode 15, and the negative electrode of the third light emitting wafer 33 is connected with the control chip 2.
The fourth frame electrode 14 is connected to the control chip 2, and supplies power to the control chip 2 and the light emitting chip 31 by using the power pin 114. The third frame electrode 13 is connected to the control chip 2 and provides an input signal to the control chip 2 via a signal input pin 113. The sixth frame electrode 16 is connected to the control chip 2, and provides an external output signal from the control chip 2 through the signal output pin 116. The fourth frame electrode 14 is connected to the fifth frame electrode 15, so that the pin 115 of the LED frame 1 is also a power pin for supplying power to the second light emitting chip 32. The fifth frame electrode 15 is connected to the wafer positive electrode of the third light emitting wafer 33 to supply power to the third light emitting wafer 33.
In the present embodiment, the first light emitting wafer 31 and the second light emitting wafer 32 may each be a unipolar wafer or a bipolar wafer. Taking the first light emitting wafer 31 as a bipolar G wafer, the second light emitting wafer 32 as a unipolar R wafer, and the third light emitting wafer 33 as a bipolar B wafer as an example, referring to fig. 2, the wafer positive electrode of the bipolar G wafer 31 is connected with the fourth bracket electrode 14 through a conductive metal wire, and the wafer negative electrode is connected with the control chip 2 through a conductive metal wire; the wafer positive electrode of the unipolar R wafer 32 is fixed on the fifth bracket electrode 15 and is connected with the fifth bracket electrode 15, and the wafer negative electrode is connected with the control chip 2 through a conductive metal wire; the wafer positive electrode of the bipolar B wafer 33 is connected to the fifth frame electrode 15 via a conductive metal wire, and the wafer negative electrode is connected to the control chip 2 via a conductive metal wire.
Further, the fourth carrier electrode 14 is connected to the wafer positive electrode of the bipolar G wafer 31 to supply power thereto; the fourth frame electrode 14 is connected to the fifth frame electrode 15 to provide the same voltage to the wafer positive electrode of the unipolar R-wafer 32; the fifth frame electrode 15 is connected to the wafer positive electrode of the bipolar B wafer 33 to supply the same voltage to the bipolar B wafer 33.
In this embodiment, the wafer negative electrode of the first light emitting wafer 31 is connected to the control chip 2 through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm. Compared with the prior art, the length of the material is 1.25mm, and the material is shortened by 20-48%.
In this embodiment, the second light emitting chip 32 is connected to the control chip 2 through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm. Compared with the prior art, the thickness of the material is 0.8mm, and the material is shortened by 6-25%.
In this embodiment, the wafer negative electrode of the third light emitting wafer 33 is connected to the control chip 2 through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm. Compared with the prior art, the length of the material is 1.35mm, and the material is shortened by 18-41%.
In this embodiment, the first bracket electrode 11 is connected to the control chip 2 through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm. Compared with the prior art, the thickness of the material is 0.95mm, and the material is shortened by 5-16%.
In this embodiment, the third support electrode 13 is connected to the control chip 2 through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm. Compared with the prior art, the thickness of the material is 0.95mm, and the material is shortened by 5-16%.
In this embodiment, the fourth support electrode 14 is connected to the control chip 2 through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm. Compared with the prior art, the thickness of the steel plate is 1.45mm, and the length is shortened by 17-59%.
In this embodiment, the sixth support electrode 16 is connected to the control chip 2 through a seventh conductive wire, and the length of the seventh conductive wire is between 0.65 and 1.4 mm. Compared with the prior art, the length of the material is 1.6mm, and the material is shortened by 12-60%.
In this embodiment, the fourth frame electrode 14 and the fifth frame electrode 15 are connected by an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm. Compared with the prior art, the thickness of the material is 0.8mm, and the material is shortened by 6-25%.
In this embodiment, the fifth frame electrode 15 is connected to the wafer positive electrode of the third light emitting wafer 33 through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm. Compared with the prior art, the length of the material is 1.0mm, and the material is shortened by 20-45%.
In the present embodiment, the fourth frame electrode 14 is connected to the positive electrode of the first light emitting chip 31 through a tenth conductive metal wire, and the length of the tenth conductive metal wire is between 0.3 mm and 0.4 mm. Compared with the prior art, the thickness of the material is 0.45mm, and the material is shortened by 11-34%. It should be noted that, if the first light emitting chip 31 is a unipolar chip, the positive electrode of the first light emitting chip 31 is fixed on the fourth frame electrode 14, and the negative electrode of the chip is connected to the control chip 2, i.e. the tenth conductive wire is not required.
As an improvement of the technical scheme, the connection parts of the conductive metal wires and the support electrodes 11-16 are provided with conductive adhesive (not shown in the figure) so as to increase the binding force of the conductive metal wires and the support electrodes 11-16 and ensure that the conductive metal wires are not easy to separate from the support electrodes 11-16.
As an improvement of the technical scheme, the LED support packaging structure further comprises a packaging colloid (not shown in the figure) for packaging the control chip 2, the light emitting wafer 3 and the conductive metal wires.
Preferably, since the wafer 3 is a light emitting wafer in this embodiment, the encapsulant should be a light transmissive encapsulant, such as a resin or silicone gel, to ensure light transmittance.
Example two
The embodiment provides an LED support packaging process, and referring to fig. 2, the packaging process includes the following steps:
s1, providing an LED support 1, wherein the LED support 1 comprises a first support electrode 11, a second support electrode 12, a third support electrode 13, a fourth support electrode 14, a fifth support electrode 15 and a sixth support electrode 16. The fourth support electrode 14 is connected with the fifth support electrode 15, the first support electrode 11 is connected with the grounding pin 111 of the LED support 1, the second support electrode 12 is connected with the NC pin 112 of the LED support 1, the third support electrode 13 is connected with the signal input pin 113 of the LED support 1, the fourth support electrode 14 is connected with the power supply pin 114 of the LED support 1, and the sixth support electrode 16 is connected with the signal output pin 116 of the LED support 1;
s2, fixing the control chip 2 on the second support electrode 12 and located at the center of the LED support 1, and connecting the first support electrode 11, the third support electrode 13, the fourth support electrode 14 and the sixth support electrode 16 with the control chip 2;
s3, fixing the first light emitting wafer 31 on the fourth support electrode 14 at a position close to the control chip 2 and connecting the first light emitting wafer with the control chip 2, fixing the second light emitting wafer 32 on the fifth support electrode 15 at a position close to the control chip 2 and connecting the second light emitting wafer with the control chip 2, and fixing the third light emitting wafer 33 on the sixth support electrode 16 at a position close to the control chip 2 and connecting the third light emitting wafer with the control chip 2. The third light emitting wafer 33 is a bipolar wafer, the positive electrode of the third light emitting wafer 33 is connected with the fifth bracket electrode 15, and the negative electrode of the third light emitting wafer 33 is connected with the control chip 2.
In connection with fig. 2, in particular:
step S1: an LED holder 1 is provided. The LED support 1 includes a first support electrode 11, a second support electrode 12, a third support electrode 13, a fourth support electrode 14, a fifth support electrode 15, and a sixth support electrode 16. The fourth support electrode 14 is connected with the fifth support electrode 15, the first support electrode 11 is connected with the grounding pin 111 of the LED support 1, the second support electrode 12 is connected with the NC pin 112 of the LED support 1, the third support electrode 13 is connected with the signal input pin 113 of the LED support 1, the fourth support electrode 14 is connected with the power supply pin 114 of the LED support 1, and the sixth support electrode 16 is connected with the signal output pin 116 of the LED support 1;
step S2: the control chip 2 is fixed on the second bracket electrode 12, and the extending tail end of the second bracket electrode 12 is positioned at the center of the LED bracket 1, so that the control chip 2 is also positioned at the center of the LED bracket 1, the mode can ensure that the control chip 2 is closer to each wafer and each bracket electrode, the purpose of shortening the length of a bonding wire is achieved, and the conductive metal wire is easy to arrange; then the first bracket electrode 11, the third bracket electrode 13, the fourth bracket electrode 14 and the sixth bracket electrode 16 are connected with the control chip 2;
step S3 comprises the following sub-steps:
step S31: the die bonding positions are determined on the fourth support electrode 14, the fifth support electrode 15 and the sixth support electrode 16, respectively, and the die bonding positions need to be as close to the control chip 2 as possible so that the wafer electrodes are welded to (the electrodes of) the control chip 2 with shorter conductive metal wires;
step S32: and the crystal glue is dripped at the crystal fixing positions on the fourth bracket electrode 14, the fifth bracket electrode 15 and the sixth bracket electrode 16. It should be noted that the monopole wafer needs to be fixed by conductive glue, and the bipolar wafer needs to be fixed by insulating glue;
step S33: the first luminescent wafer 31, the second luminescent wafer 32 and the third luminescent wafer 33 are respectively picked up by tweezers or sucked by suction nozzles and placed at die bonding positions on the fourth bracket electrode 14, the fifth bracket electrode 15 and the sixth bracket electrode 16;
step S34: heating and baking to solidify the die bond glue, thereby fixing the first luminescent wafer 31, the second luminescent wafer 32 and the third luminescent wafer 33 on the fourth bracket electrode 14, the fifth bracket electrode 15 and the sixth bracket electrode 16 respectively;
step S35: the wafer electrodes of the first, second and third light emitting wafers 31, 32 and 33 are respectively soldered to the control chip 2 by conductive metal wires using an LED wire bonder, with solder joints being provided on the wafer electrodes of the first, second and third light emitting wafers 31, 32 and 33, respectively, and solder joints being provided on (the electrodes of) the control chip 2.
Taking the first light emitting wafer 31 as a bipolar G wafer, the second light emitting wafer 32 as a unipolar R wafer, and the third light emitting wafer 33 as a bipolar B wafer as an example:
in this embodiment, the wafer negative electrode of the first light emitting wafer 31 is connected to the control chip 2 through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm. Compared with the prior art, the length of the material is 1.25mm, and the material is shortened by 20-48%.
In this embodiment, the second light emitting chip 32 is connected to the control chip 2 through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm. Compared with the prior art, the thickness of the material is 0.8mm, and the material is shortened by 6-25%.
In this embodiment, the wafer negative electrode of the third light emitting wafer 33 is connected to the control chip 2 through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm. Compared with the prior art, the length of the material is 1.35mm, and the material is shortened by 18-41%.
In this embodiment, the first bracket electrode 11 is connected to the control chip 2 through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm. Compared with the prior art, the thickness of the material is 0.95mm, and the material is shortened by 5-16%.
In this embodiment, the third support electrode 13 is connected to the control chip 2 through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm. Compared with the prior art, the thickness of the material is 0.95mm, and the material is shortened by 5-16%.
In this embodiment, the fourth support electrode 14 is connected to the control chip 2 through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm. Compared with the prior art, the thickness of the steel plate is 1.45mm, and the length is shortened by 17-59%.
In this embodiment, the sixth support electrode 16 is connected to the control chip 2 through a seventh conductive wire, and the length of the seventh conductive wire is between 0.65 and 1.4 mm. Compared with the prior art, the length of the material is 1.6mm, and the material is shortened by 12-60%.
In this embodiment, the fourth frame electrode 14 and the fifth frame electrode 15 are connected by an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm. Compared with the prior art, the thickness of the material is 0.8mm, and the material is shortened by 6-25%.
In this embodiment, the fifth frame electrode 15 is connected to the wafer positive electrode of the third light emitting wafer 33 through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm. Compared with the prior art, the length of the material is 1.0mm, and the material is shortened by 20-45%.
In the present embodiment, the fourth frame electrode 14 is connected to the positive electrode of the first light emitting chip 31 through a tenth conductive metal wire, and the length of the tenth conductive metal wire is between 0.3 mm and 0.4 mm. Compared with the prior art, the thickness of the material is 0.45mm, and the material is shortened by 11-34%. It should be noted that, if the first light emitting chip 31 is a unipolar chip, the positive electrode of the first light emitting chip 31 is fixed on the fourth frame electrode 14, and the negative electrode of the chip is connected to the control chip 2, i.e. the tenth conductive wire is not required.
As an improvement of the technical scheme, the packaging process of the LED support further comprises:
s4, dispensing: dripping conductive adhesive at the joint of the conductive metal wire and the bracket electrodes 11-16;
s5, packaging: the control chip 2, the light emitting chip 3 and the conductive metal wires are encapsulated by using an encapsulation colloid.
In connection with fig. 2, in particular:
s4, dropping conductive adhesive (not shown in the figure) at the joint of the fourth conductive metal wire and the first bracket electrode 11, the joint of the fifth conductive metal wire and the third bracket electrode 13, the joint of the sixth conductive metal wire and the fourth bracket electrode 14, the joint of the seventh conductive metal wire and the sixth bracket electrode 16, the joint of the eighth conductive metal wire and the fourth bracket electrode 14 and the fifth bracket electrode 15 and the joint of the ninth conductive metal wire and the fifth bracket electrode 15 to increase the binding force of the conductive metal wire and the bracket electrodes 11-16, so that the conductive metal wire is not easy to separate from the bracket electrodes 11-16;
and S5, packaging the control chip 2, the light-emitting wafer 3 and the conductive metal wires by using a packaging colloid (not shown in the figure).
Preferably, since the wafer 3 is a light emitting wafer in this embodiment, the encapsulant should be a light transmissive encapsulant, such as a resin or silicone gel, to ensure light transmittance.
In the existing LED support packaging technology, the positions of the control chip, the wafer and the support electrode are unreasonably arranged, so that the length of a bonding wire between the control chip, the wafer and the support electrode is too long, and the cost is increased. The invention not only is beneficial to the arrangement of the conductive metal wires, but also can achieve the purpose of shortening the welding wires and reducing the cost by adjusting the positions of the control chip, the wafer and the bracket electrode, and changing the modes of the bracket electrode where the control chip is positioned, and the like, thereby having good economic benefit. In addition, the invention also adds the conductive adhesive at the joint of the conductive metal wire and the bracket electrode, thereby increasing the binding force of the conductive metal wire and the bracket electrode, ensuring that the conductive metal wire is not easy to separate from the bracket electrode and improving the quality of the LED product.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.
Claims (10)
1. An LED stand-off package structure, comprising:
the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, wherein the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
the control chip is fixed on the second support electrode and is positioned at the center of the LED support, and the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode are all connected with the control chip;
the light-emitting wafer comprises a first light-emitting wafer, a second light-emitting wafer and a third light-emitting wafer, the first light-emitting wafer is fixed on the fourth support electrode at a position close to the control chip and is connected with the control chip, the second light-emitting wafer is fixed on the fifth support electrode at a position close to the control chip and is connected with the control chip, and the third light-emitting wafer is fixed on the sixth support electrode at a position close to the control chip and is connected with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth bracket electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
2. The LED support package of claim 1, wherein the LED support package is configured to include,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm;
and a wafer negative electrode of the third light-emitting wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm.
3. The LED support package of claim 2, wherein the LED support package is configured to be mounted on a substrate,
the first bracket electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm;
the third bracket electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm;
the fourth bracket electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 and 1.4 mm.
4. An LED support package as claimed in claim 3, wherein,
the fourth bracket electrode is connected with the fifth bracket electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm;
the fifth bracket electrode is connected with the positive electrode of the third luminescent wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm.
5. The LED package structure of claim 4, wherein the connection between said fourth conductive wire and said first support electrode, the connection between said fifth conductive wire and said third support electrode, the connection between said sixth conductive wire and said fourth support electrode, the connection between said seventh conductive wire and said sixth support electrode, the connection between said eighth conductive wire and said fourth support electrode and said fifth support electrode, and the connection between said ninth conductive wire and said fifth support electrode are all provided with conductive paste.
6. The LED fixture packaging structure of any one of claims 1-5, further comprising a light transmissive encapsulant for encapsulating the LED fixture, the control chip, and the light emitting die.
7. The LED support packaging process is characterized by comprising the following steps of:
providing an LED support, wherein the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
fixing a control chip on the second support electrode and positioned at the central position of the LED support, and connecting the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode with the control chip;
fixing a first light-emitting wafer on the fourth bracket electrode at a position close to the control chip and connecting the first light-emitting wafer with the control chip;
fixing a second luminous wafer on the fifth bracket electrode at a position close to the control chip and connecting the second luminous wafer with the control chip;
fixing a third light-emitting wafer on the sixth support electrode at a position close to the control chip and connecting the third light-emitting wafer with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth bracket electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
8. The LED support packaging process of claim 7, wherein,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 and 0.75 mm;
the wafer negative electrode of the third luminous wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm;
the first bracket electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8 and 0.9 mm;
the third bracket electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8 and 0.9 mm;
the fourth bracket electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 and 1.4 mm;
the fourth bracket electrode is connected with the fifth bracket electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 and 0.75 mm;
the fifth bracket electrode is connected with the positive electrode of the third luminescent wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 and 0.8 mm.
9. The LED fixture packaging process of claim 8, further comprising:
and conductive adhesive is dripped at the connection part of the fourth conductive metal wire and the first bracket electrode, the connection part of the fifth conductive metal wire and the third bracket electrode, the connection part of the sixth conductive metal wire and the fourth bracket electrode, the connection part of the seventh conductive metal wire and the sixth bracket electrode, the connection part of the eighth conductive metal wire and the fourth bracket electrode and the fifth bracket electrode and the connection part of the ninth conductive metal wire and the fifth bracket electrode.
10. An LED support packaging process according to any of claims 7 to 9, further comprising:
and packaging the LED bracket, the control chip and the light-emitting wafer by using a light-transmitting packaging colloid.
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