CN210224029U - LED support packaging structure - Google Patents
LED support packaging structure Download PDFInfo
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- CN210224029U CN210224029U CN201921037529.5U CN201921037529U CN210224029U CN 210224029 U CN210224029 U CN 210224029U CN 201921037529 U CN201921037529 U CN 201921037529U CN 210224029 U CN210224029 U CN 210224029U
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 97
- 239000008393 encapsulating agent Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 239000000084 colloidal system Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The utility model discloses a LED support packaging structure relates to LED encapsulation field. The packaging structure comprises: LED support, control chip and luminous wafer. The utility model discloses a fix control chip on the support electrode of LED support and be located the central point of LED support and put, fix luminous wafer again on other support electrodes of LED support and be close to control chip, overcome the longer problem of far away bonding wire of distance between control chip and luminous wafer, the support electrode among the prior art for luminous wafer is nearer with control chip, support electrode and control chip's distance, has shortened bonding wire length, the cost is reduced.
Description
Technical Field
The utility model belongs to the technical field of the LED encapsulation and specifically relates to a LED support packaging structure is related to.
Background
As shown in fig. 1, a conventional LED support package is manufactured by the following steps: (1) firstly, fixing an IC control chip 1-1 and a light-emitting chip 1-2 on a bracket by using die attach adhesive in a bracket die attach area; (2) planting conductive metal balls on the IC control chip 1-1 and the light-emitting wafer electrode, pulling the conductive metal wires 1-4, and connecting the IC control chip 1-1 with the light-emitting wafer electrode and the support electrode 1-3 to form a power-on loop; (3) the light-transmitting colloid 1-5 is sealed in the support bowl.
Referring to fig. 1, in the conventional LED support design, since the IC control chip 1-1 is disposed at the end of a longer support electrode, the distance between the IC control chip 1-1 and the light emitting chip 1-2 and other support electrodes is longer, and the bonding wire is longer, so that the conductive metal wire 1-4 is not easily arranged and welded, and the production cost is increased. In addition, the connection part of the bracket electrode 1-3 and the conductive metal wire 1-4 is easily influenced by the change of the temperature and the humidity of the environment in the using process, so that the connection part of the bracket electrode 1-3 and the conductive metal wire 1-4 is disconnected, the problems of open circuit of a power-on loop, poor LED brightness and the like are caused, and the reliability of a product is poor.
SUMMERY OF THE UTILITY MODEL
The present invention aims at solving at least one of the technical problems in the related art to a certain extent. Therefore, an object of the utility model is to provide a LED support packaging structure is favorable to shortening the bonding wire, and reduce cost improves the product quality.
The utility model adopts the technical proposal that:
the utility model provides a LED support packaging structure, include:
the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, wherein the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
the control chip is fixed on the second support electrode and is positioned in the center of the LED support, and the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode are all connected with the control chip;
the light-emitting wafer comprises a first light-emitting wafer, a second light-emitting wafer and a third light-emitting wafer, the first light-emitting wafer is fixed on the fourth support electrode and close to the control chip and is connected with the control chip, the second light-emitting wafer is fixed on the fifth support electrode and close to the control chip and is connected with the control chip, and the third light-emitting wafer is fixed on the sixth support electrode and close to the control chip and is connected with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth support electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
Further, the air conditioner is provided with a fan,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 mm and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 mm and 0.75 mm;
and the wafer negative electrode of the third light-emitting wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm.
Further, the air conditioner is provided with a fan,
the first support electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8mm and 0.9 mm;
the third support electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8mm and 0.9 mm;
the fourth support electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 mm and 1.4 mm.
Further, the air conditioner is provided with a fan,
the fourth support electrode is connected with the fifth support electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is 0.6-0.75 mm;
the fifth support electrode is connected with the wafer positive electrode of the third light-emitting wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 mm and 0.8 mm.
Furthermore, the joint of the fourth conductive metal wire and the first stent electrode, the joint of the fifth conductive metal wire and the third stent electrode, the joint of the sixth conductive metal wire and the fourth stent electrode, the joint of the seventh conductive metal wire and the sixth stent electrode, the joint of the eighth conductive metal wire and the fourth stent electrode and the fifth stent electrode, and the joint of the ninth conductive metal wire and the fifth stent electrode all have conductive glue.
Further, the LED support package structure further includes a package colloid for packaging the LED support, the control chip and the light emitting chip.
Further, the packaging colloid is a light-transmitting colloid.
The utility model has the advantages that:
the utility model discloses a fix control chip on the support electrode of LED support and be located the central point of LED support and put, fix luminous wafer again on other support electrodes of LED support and be close to control chip, overcome the longer problem of far away bonding wire of distance between control chip and luminous wafer, the support electrode among the prior art for luminous wafer is nearer with control chip, support electrode and control chip's distance, has shortened bonding wire length, the cost is reduced.
Additionally, the utility model discloses still increase the conducting resin through the junction at conductive metal line and support electrode, increased the cohesion of conductive metal line and support electrode for the conductive metal line is difficult to break away from the support electrode, has improved the product quality.
Drawings
FIG. 1 is a schematic flow diagram of a prior art LED support packaging process;
fig. 2 is a schematic structural diagram of an embodiment of the LED bracket package structure of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
Example one
The present embodiment provides an LED support packaging structure, as shown in fig. 2, the LED support packaging structure includes:
the LED support 1 comprises a first support electrode 11, a second support electrode 12, a third support electrode 13, a fourth support electrode 14, a fifth support electrode 15 and a sixth support electrode 16. The fourth support electrode 14 is connected with the fifth support electrode 15, the first support electrode 11 is connected with a ground pin 111 of the LED support 1, the second support electrode 12 is connected with an NC pin 112 of the LED support 1, the third support electrode 13 is connected with a signal input pin 113 of the LED support 1, the fourth support electrode 14 is connected with a power supply pin 114 of the LED support 1, and the sixth support electrode 16 is connected with a signal output pin 116 of the LED support 1.
And the control chip 2 is fixed on the second support electrode 12 and is positioned at the center of the LED support 1, and the first support electrode 11, the third support electrode 13, the fourth support electrode 14 and the sixth support electrode 16 are all connected with the control chip 2.
A light emitting chip 3, wherein the light emitting chip 3 comprises a first light emitting chip 31, a second light emitting chip 32 and a third light emitting chip 33. The first light emitting chip 31 is fixed on the fourth support electrode 14 at a position close to the control chip 2 and connected to the control chip 2, the second light emitting chip 32 is fixed on the fifth support electrode 15 at a position close to the control chip 2 and connected to the control chip 2, and the third light emitting chip 33 is fixed on the sixth support electrode 16 at a position close to the control chip 2 and connected to the control chip 2. The third light emitting wafer 33 is a bipolar wafer, a wafer positive electrode of the third light emitting wafer 33 is connected to the fifth support electrode 15, and a wafer negative electrode of the third light emitting wafer 33 is connected to the control chip 2.
The fourth support electrode 14 is connected to the control chip 2, and supplies power to the control chip 2 and the light emitting chip 31 by using the power supply pin 114. The third support electrode 13 is connected to the control chip 2 and provides an input signal to the control chip 2 via a signal input pin 113. The sixth support electrode 16 is connected to the control chip 2, and provides an external output signal of the control chip 2 through the signal output pin 116. The fourth holder electrode 14 is connected to the fifth holder electrode 15, so that the pin 115 of the LED holder 1 is also a power supply pin to supply power to the second light emitting chip 32. The fifth frame electrode 15 is connected to the positive electrode of the third light emitting chip 33 to supply power to the third light emitting chip 33.
In this embodiment, each of the first and second light emitting chips 31 and 32 may be a unipolar wafer or a bipolar wafer. Taking the first light emitting chip 31 as a bipolar G chip, the second light emitting chip 32 as a unipolar R chip, and the third light emitting chip 33 as a bipolar B chip as an example, referring to fig. 2, the positive electrode of the bipolar G chip 31 is connected to the fourth support electrode 14 through a conductive metal wire, and the negative electrode of the bipolar G chip is connected to the control chip 2 through a conductive metal wire; the positive electrode of the unipolar R wafer 32 is fixed on the fifth support electrode 15 and connected with the fifth support electrode 15, and the negative electrode of the wafer is connected with the control chip 2 through a conductive metal wire; the positive wafer electrode of the bipolar B wafer 33 is connected to the fifth support electrode 15 via a conductive metal wire, and the negative wafer electrode is connected to the control chip 2 via a conductive metal wire.
Furthermore, the fourth support electrode 14 is connected with the positive electrode of the bipolar G wafer 31 to supply power thereto; the fourth holder electrode 14 is connected to the fifth holder electrode 15 to supply the same voltage to the wafer positive electrode of the unipolar R wafer 32; the fifth holder electrode 15 is connected to the wafer positive electrode of the bipolar B wafer 33 to supply the same voltage to the bipolar B wafer 33.
In this embodiment, the negative electrode of the first light emitting chip 31 is connected to the control chip 2 through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 mm and 1.0 mm. Compared with the prior art with 1.25mm, the thickness is shortened by 20-48%.
In this embodiment, the second light emitting chip 32 and the control chip 2 are connected by a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 mm and 0.75 mm. Compared with the prior art with the thickness of 0.8mm, the thickness is shortened by 6-25%.
In this embodiment, the negative electrode of the third light emitting chip 33 is connected to the control chip 2 through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8mm and 1.1 mm. Compared with the prior art with 1.35mm, the thickness is shortened by 18-41%.
In this embodiment, the first support electrode 11 is connected to the control chip 2 through a fourth conductive metal line, and the length of the fourth conductive metal line is between 0.8mm and 0.9 mm. Compared with the prior art with the thickness of 0.95mm, the thickness is shortened by 5-16%.
In this embodiment, the third support electrode 13 is connected to the control chip 2 through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8mm and 0.9 mm. Compared with the prior art with the thickness of 0.95mm, the thickness is shortened by 5-16%.
In this embodiment, the fourth support electrode 14 is connected to the control chip 2 through a sixth conductive metal line, and the length of the sixth conductive metal line is between 0.6 mm and 1.2 mm. Compared with the 1.45mm in the prior art, the length is shortened by 17-59%.
In this embodiment, the sixth support electrode 16 is connected to the control chip 2 through a seventh conductive metal line, and the length of the seventh conductive metal line is between 0.65 mm and 1.4 mm. Compared with the 1.6mm in the prior art, the thickness is shortened by 12-60%.
In this embodiment, the fourth support electrode 14 and the fifth support electrode 15 are connected by an eighth conductive metal wire, and the length of the eighth conductive metal wire is between 0.6 mm and 0.75 mm. Compared with the prior art with the thickness of 0.8mm, the thickness is shortened by 6-25%.
In this embodiment, the fifth frame electrode 15 is connected to the positive electrode of the third light emitting chip 33 through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 mm and 0.8 mm. Compared with the 1.0mm in the prior art, the thickness is shortened by 20-45%.
In this embodiment, the fourth frame electrode 14 is connected to the positive electrode of the first light emitting chip 31 through a tenth conductive metal wire, and the length of the tenth conductive metal wire is between 0.3 mm and 0.4 mm. Compared with the prior art with the thickness of 0.45mm, the thickness is shortened by 11-34%. It should be noted that if the first light emitting chip 31 is a single-pole chip, the positive electrode of the first light emitting chip 31 is fixed on the fourth support electrode 14, and the negative electrode of the first light emitting chip is connected to the control chip 2, i.e. the tenth conductive metal wire is not needed.
As an improvement of the technical scheme, the connecting parts of the conductive metal wires and the support electrodes 11-16 are provided with conductive adhesives (not shown in the figure) to increase the binding force between the conductive metal wires and the support electrodes 11-16, so that the conductive metal wires are not easy to separate from the support electrodes 11-16.
As an improvement of the technical solution, the LED frame package structure further includes a package colloid (not shown in the figure) for packaging the control chip 2, the light emitting chip 3 and the conductive metal wires.
Preferably, since the chip 3 in this embodiment is a light emitting chip, the encapsulant should be a transparent encapsulant, such as resin or silicon gel, to ensure light transmission.
The packaging process of the LED bracket, combined with the figure 2, comprises the following steps:
step S1: an LED support 1 is provided. The LED support 1 includes a first support electrode 11, a second support electrode 12, a third support electrode 13, a fourth support electrode 14, a fifth support electrode 15, and a sixth support electrode 16. The fourth support electrode 14 is connected with the fifth support electrode 15, the first support electrode 11 is connected with a ground pin 111 of the LED support 1, the second support electrode 12 is connected with an NC pin 112 of the LED support 1, the third support electrode 13 is connected with a signal input pin 113 of the LED support 1, the fourth support electrode 14 is connected with a power supply pin 114 of the LED support 1, and the sixth support electrode 16 is connected with a signal output pin 116 of the LED support 1;
step S2: the control chip 2 is fixed on the second support electrode 12, and the extending tail end of the second support electrode 12 is positioned at the center of the LED support 1, so that the control chip 2 is also positioned at the center of the LED support 1, and the control chip 2 can be closer to each wafer and each support electrode in the mode, thereby achieving the purpose of shortening the length of a bonding wire and being easy to arrange a conductive metal wire; then connecting the first support electrode 11, the third support electrode 13, the fourth support electrode 14 and the sixth support electrode 16 with the control chip 2;
step S3 includes the following substeps:
step S31: determining die bonding positions on the fourth support electrode 14, the fifth support electrode 15 and the sixth support electrode 16 respectively, wherein the die bonding positions need to be as close to the control chip 2 as possible so that the wafer electrodes are welded to (the electrodes of) the control chip 2 through short conductive metal wires;
step S32: and dripping the die bonding glue at the die bonding positions on the fourth support electrode 14, the fifth support electrode 15 and the sixth support electrode 16. It should be noted here that the unipolar chip is fixed by conductive paste, and the bipolar chip is fixed by insulating paste;
step S33: the first luminescent wafer 31, the second luminescent wafer 32 and the third luminescent wafer 33 are respectively clamped by tweezers or sucked by a suction nozzle and are placed at the die bonding positions on the fourth support electrode 14, the fifth support electrode 15 and the sixth support electrode 16;
step S34: heating and baking to solidify the die bonding glue, so that the first light-emitting wafer 31, the second light-emitting wafer 32 and the third light-emitting wafer 33 are respectively fixed on the fourth support electrode 14, the fifth support electrode 15 and the sixth support electrode 16;
step S35: the bonding pads are respectively arranged on the wafer electrodes of the first light emitting wafer 31, the second light emitting wafer 32 and the third light emitting wafer 33, the bonding pads are arranged on (the electrodes of) the control chip 2, and the wafer electrodes of the first light emitting wafer 31, the second light emitting wafer 32 and the third light emitting wafer 33 are respectively bonded with the control chip 2 through conductive metal wires by using an LED bonding machine;
s4, dripping conductive adhesive at the connecting positions of the conductive metal wires and the support electrodes 11-16 to increase the binding force of the conductive metal wires and the support electrodes 11-16, so that the conductive metal wires are not easy to separate from the support electrodes 11-16;
and S5, packaging the control chip 2, the light-emitting wafer 3 and the conductive metal wire by using a packaging colloid.
In the existing LED support packaging structure, because the positions of the control chip, the wafer and the support electrode are unreasonable, the length of a bonding wire among the control chip, the wafer and the support electrode is too long, and the cost is increased. The utility model discloses a position of adjustment control chip, wafer, support electrode, modes such as support electrode at change control chip place not only are favorable to arranging of conductive metal line, can also reach the purpose that shortens bonding wire reduce cost, have good economic benefits. Furthermore, the utility model discloses still through the junction dropwise add conducting resin at conductive metal line and support electrode, increased the cohesion of conductive metal line and support electrode for the conductive metal line is difficult to break away from the support electrode, has improved LED product quality.
While the preferred embodiments of the present invention have been described, the present invention is not limited to the embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and such equivalent modifications or substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (7)
1. An LED support packaging structure, comprising:
the LED support comprises a first support electrode, a second support electrode, a third support electrode, a fourth support electrode, a fifth support electrode and a sixth support electrode, wherein the fourth support electrode is connected with the fifth support electrode, the first support electrode is connected with a grounding pin of the LED support, the second support electrode is connected with an NC pin of the LED support, the third support electrode is connected with a signal input pin of the LED support, the fourth support electrode is connected with a power supply pin of the LED support, and the sixth support electrode is connected with a signal output pin of the LED support;
the control chip is fixed on the second support electrode and is positioned in the center of the LED support, and the first support electrode, the third support electrode, the fourth support electrode and the sixth support electrode are all connected with the control chip;
the light-emitting wafer comprises a first light-emitting wafer, a second light-emitting wafer and a third light-emitting wafer, the first light-emitting wafer is fixed on the fourth support electrode and close to the control chip and is connected with the control chip, the second light-emitting wafer is fixed on the fifth support electrode and close to the control chip and is connected with the control chip, and the third light-emitting wafer is fixed on the sixth support electrode and close to the control chip and is connected with the control chip;
the third light-emitting wafer is a bipolar wafer, a wafer positive electrode of the third light-emitting wafer is connected with the fifth support electrode, and a wafer negative electrode of the third light-emitting wafer is connected with the control chip.
2. The LED support package structure of claim 1,
the first light-emitting wafer is connected with the control chip through a first conductive metal wire, and the length of the first conductive metal wire is between 0.65 mm and 1.0 mm;
the second light-emitting wafer is connected with the control chip through a second conductive metal wire, and the length of the second conductive metal wire is between 0.6 mm and 0.75 mm;
and the wafer negative electrode of the third light-emitting wafer is connected with the control chip through a third conductive metal wire, and the length of the third conductive metal wire is between 0.8 and 1.1 mm.
3. The LED support package structure of claim 2,
the first support electrode is connected with the control chip through a fourth conductive metal wire, and the length of the fourth conductive metal wire is between 0.8mm and 0.9 mm;
the third support electrode is connected with the control chip through a fifth conductive metal wire, and the length of the fifth conductive metal wire is between 0.8mm and 0.9 mm;
the fourth support electrode is connected with the control chip through a sixth conductive metal wire, and the length of the sixth conductive metal wire is between 0.6 and 1.2 mm;
the sixth support electrode is connected with the control chip through a seventh conductive metal wire, and the length of the seventh conductive metal wire is between 0.65 mm and 1.4 mm.
4. The LED support package structure of claim 3,
the fourth support electrode is connected with the fifth support electrode through an eighth conductive metal wire, and the length of the eighth conductive metal wire is 0.6-0.75 mm;
the fifth support electrode is connected with the wafer positive electrode of the third light-emitting wafer through a ninth conductive metal wire, and the length of the ninth conductive metal wire is between 0.55 mm and 0.8 mm.
5. The LED support package structure of claim 4, wherein a connection between the fourth conductive metal wire and the first support electrode, a connection between the fifth conductive metal wire and the third support electrode, a connection between the sixth conductive metal wire and the fourth support electrode, a connection between the seventh conductive metal wire and the sixth support electrode, a connection between the eighth conductive metal wire and the fourth support electrode and the fifth support electrode, and a connection between the ninth conductive metal wire and the fifth support electrode are all provided with a conductive adhesive.
6. The LED support package structure according to any one of claims 1 to 5, further comprising an encapsulant for encapsulating the LED support, the control chip and the light emitting die.
7. The LED package structure of claim 6, wherein the encapsulant is a light transmissive encapsulant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921037529.5U CN210224029U (en) | 2019-07-04 | 2019-07-04 | LED support packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921037529.5U CN210224029U (en) | 2019-07-04 | 2019-07-04 | LED support packaging structure |
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| CN210224029U true CN210224029U (en) | 2020-03-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201921037529.5U Withdrawn - After Issue CN210224029U (en) | 2019-07-04 | 2019-07-04 | LED support packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335863A (en) * | 2019-07-04 | 2019-10-15 | 深圳光台实业有限公司 | A kind of LED support encapsulating structure and packaging technology |
-
2019
- 2019-07-04 CN CN201921037529.5U patent/CN210224029U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335863A (en) * | 2019-07-04 | 2019-10-15 | 深圳光台实业有限公司 | A kind of LED support encapsulating structure and packaging technology |
| CN110335863B (en) * | 2019-07-04 | 2024-02-23 | 今台电子(惠州)有限公司 | LED support packaging structure and packaging technology |
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