CN105321937A - Ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element - Google Patents

Ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element Download PDF

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Publication number
CN105321937A
CN105321937A CN201410292578.9A CN201410292578A CN105321937A CN 105321937 A CN105321937 A CN 105321937A CN 201410292578 A CN201410292578 A CN 201410292578A CN 105321937 A CN105321937 A CN 105321937A
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CN
China
Prior art keywords
electric conductor
white light
led element
led chip
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410292578.9A
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Chinese (zh)
Inventor
蔡志嘉
窦鑫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMICC OPTO-ELECTRONICS TECHNOLOGY Co Ltd
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AMICC OPTO-ELECTRONICS TECHNOLOGY Co Ltd
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Priority to CN201410292578.9A priority Critical patent/CN105321937A/en
Publication of CN105321937A publication Critical patent/CN105321937A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The present invention relates to an ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element comprising a substrate and at least two luminous LED chips, wherein the luminous LED chips are fixed on the pedestal, the pedestal is provided with a number of conduction holes that penetrate the upper surface and the lower surface of the pedestal, the conduction holes are filled with electric conduction bodies, the positive electrodes of all the luminous LED chips are respectively and electrically connected with an electric conduction body in at least one conduction hole through positive electrode conduction wires, and the negative electrodes of all the luminous LED chips are respectively and electrically connected with electric conduction bodies in remaining conduction holes through negative electrode conduction wires. The present invention provides the ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element which is extremely small in thickness and good in heat dissipation effect.

Description

Extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element
Technical field
The present invention relates to a kind of extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element, particularly relate to a kind of micro side light emitting-type polycrystalline LED element.
Background technology
Present micro side light emitting-type LED light on the market has two large classes:
(1) support class: main with PPA resin+copper stent for substrate, key dimension has 020 (3.8*1.05*0.6mm), 010 (3.8*1.0*0.4mm), 215 (2.8*1.0*0.9mm), 335 (3.8*0.6*1.2mm), its size is relatively large, and support class Quartering shot type LED cannot make the brilliant machine of twin crystal/tri-, cannot meet ultra-thin ultra-small type instruction class double-colored/three-color LED light;
(2) PCB class: mainly with BT resin for substrate, key dimension has 0603 (1.6*1.1*0.6mm), 0805 (2.0*1.1*0.6mm), 1204 (3.0*1.5*1.0mm), in the brilliant LED making of twin crystal/tri-, stock size is also selection 0805/1204, cannot be miniaturized.
Summary of the invention
The object of the invention is the defect overcoming prior art existence, provide a kind of very thin thickness and the extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element of good heat dissipation effect.
The technical solution adopted for the present invention to solve the technical problems is: a kind of extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element, comprise substrate and at least two emitting LED chip, described at least two emitting LED chip are fixed on substrate, described substrate is provided with some vias penetrating bottom surface on it, electric conductor is filled with in this via, the positive pole of described each emitting LED chip is electrically connected with the electric conductor in wherein at least one via respectively by positive wire, the negative pole of each emitting LED chip is electrically connected with the electric conductor in remaining via respectively by cathode conductor.
Described electric conductor is copper post or conducting resinl.
The bottom surface of described substrate is coated with the first metal conducting layer, this metal conducting layer is divided into mutually discrete positive pole zone and negative regions, described negative regions covers below the electric conductor that is connected with cathode conductor, and with this conductive body contact, described positive pole zone covers below the electric conductor that is connected with positive wire, and with this conductive body contact.
The upper bottom surface of described substrate is coated with the second metal conducting layer, this metal conducting layer is divided into mutually discrete positive pole zone and negative regions, described negative regions covers above the electric conductor that is connected with cathode conductor continuously, and with this conductive body contact, described positive pole zone covers above the electric conductor that is connected with positive wire continuously, and with other this conductive body contact, described at least two emitting LED chip are connected on the second metal conducting layer, described each positive wire is electrically connected with positive pole zone, and described each cathode conductor is electrically connected with negative regions.
Described first and second metal conducting layers are Gold plated Layer or silver coating or copper foil layer.
Described substrate is PCB substrate.
Described emitting LED chip is provided with two or three.
A preparation technology for extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element, step is as follows:
A, preparation raw material: in PCB substrate, bore via and adopt copper insert process by bottom surface conducting in PCB substrate, form consent copper post;
B, die bond: emitting LED chip is attached in PCB substrate by crystal-bonding adhesive;
C, baking: emitting LED chip is fixed in PCB substrate by baking;
D, bonding wire: emitting LED chip electrode is passed through gold thread conducting in PCB substrate;
E, pressing mold: use packaging plastic to be molded in PCB substrate by mold die;
F, baking: packaging plastic is solidified by baking;
G, cutting: product is cut into design size.
Beneficial effect:
(1) use in PCB substrate and add brill via, then by the design of plug copper as positive and negative lead wires, can reach and save space, the effect of shorten product sizes.
(2) this product is copper post conductor design, compare with PCB class Quartering shot type LED (hot group is about 200 ~ 500 °/W) with support class Quartering shot type LED (hot group is about 80 ~ 180 °/W) on the market, hot group of this product is lower than 25 °/W, reach fabulous radiating effect, simultaneously when using this product, high-power operation (30mA ~ 600mA) in being also applicable to.
(3) design of product minimization very thinization, by PCB line design, both positive and negative polarity is distributed in the bottom of PCB substrate, avoiding traditional both positive and negative polarity wire uses via to draw the thickness limits needing 0.6mm at two ends, make twin crystal LED product THICKNESS CONTROL at 0.3mm ± 0.1mm, compare conventional 0805 twin crystal and reduce 80%; Three brilliant LED product THICKNESS CONTROL are at 0.4 ± 0.1mm.
(4) this Quartering shot type machine is when client uses, and does not need towards a left side or towards during right luminescence kind of again changing planes, and directly by product commutation when packing, product pad design can reach commonality.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is the main TV structure schematic diagram of the preferred embodiments of the present invention one;
Fig. 2 is the main TV structure schematic diagram (too chaotic owing to this view having been drawn wire, therefore omit wire) of the preferred embodiments of the present invention two;
Fig. 3 is the plan structure schematic diagram (band wire) of Fig. 2;
Fig. 4 be the present invention towards left luminous time and the connection diagram of heat-radiating substrate;
Fig. 5 be the present invention towards right luminous time and the connection diagram of heat-radiating substrate.
Embodiment
The extra small ultra-thin specular removal Quartering shot type of one as shown in Fig. 1 ~ 5 highlighted white light polycrystalline LED element, comprises substrate 1 and at least two emitting LED chip 2.Described at least two emitting LED chip 2 are fixing on substrate 1.Described substrate 1 is provided with some vias penetrating bottom surface on it, in this via, is filled with electric conductor 3, preferred implementation: described electric conductor 3 is copper post or conducting resinl.The positive pole of described each emitting LED chip 2 is electrically connected with the electric conductor 3 in one of them via respectively by positive wire 4, and the negative pole of each emitting LED chip 2 is electrically connected with the electric conductor 3 in remaining via respectively by cathode conductor 5.
The bottom surface of described substrate 1 is coated with the first metal conducting layer 6, this metal conducting layer 6 is divided into mutually discrete positive pole zone 61 and negative regions 62, described negative regions 62 covers below the electric conductor 3 that is connected with cathode conductor 5, and contact with this electric conductor 3, described positive pole zone 61 covers below the electric conductor 3 that is connected with positive wire 4, and contacts with this electric conductor 3.
In order to reduce welding difficulty, fix electric conductor 3 simultaneously, the upper bottom surface of described substrate 1 is coated with the second metal conducting layer 7, this metal conducting layer 7 is divided into mutually discrete positive pole zone 71 and negative regions 72, described negative regions 72 covers above the electric conductor 3 that is connected with cathode conductor 5, and contact with this electric conductor 3, described positive pole zone 71 covers above the electric conductor 3 that is connected with positive wire 4, and contact with this electric conductor 3, described at least two emitting LED chip 2 are connected on the second metal conducting layer 7, described each positive wire 4 is electrically connected with positive pole zone 71, described each cathode conductor 5 is electrically connected with negative regions 72.
Described first and second metal conducting layers 6,7 are Gold plated Layer or silver coating or copper foil layer, preferably copper layers of foil.Described substrate 1 is PCB substrate.
Preferred embodiment one: emitting LED chip 2 is provided with two as shown in Figure 1, the positive wire 4 of this two emitting LED chip 2 all welds with the positive pole zone 71 mediated, and separate with two of the both sides respectively negative regions 72 of two cathode conductors 5 is welded.Extra small ultra-thin specular removal Quartering shot type bright white optical twining LED element is rectangular: its length is 1.6 ± 0.2mm, and wide is 0.6 ± 0.2mm, and thickness d is 0.3 ± 0.1mm.Preferred: long 1.6mm, wide 0.6mm, thick 0.3mm.
Preferred embodiment two: emitting LED chip 2 is provided with three as shown in Figure 2,3, the positive wire 4 of these three emitting LED chip 2 all welds with the positive pole zone 71 mediated, and separate with three of the both sides respectively negative regions 72 of three cathode conductors 5 is welded.The brilliant LED element of extra small ultra-thin specular removal Quartering shot type highlighted white light three is rectangular: its length is 1.6 ± 0.2mm, and wide is 0.6 ± 0.2mm, and thickness d is 0.4 ± 0.1mm.Preferred: long 1.6mm, wide 0.6mm, thick 0.4mm.
A preparation technology for extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element, step is as follows:
A, preparation raw material: in PCB substrate 1, bore via and adopt copper insert process by bottom surface conducting in PCB substrate 1, form consent copper post 3;
B, die bond: emitting LED chip 2 is attached in PCB substrate 1 by crystal-bonding adhesive;
C, baking: emitting LED chip 2 is fixed in PCB substrate 1 by baking;
D, bonding wire: emitting LED chip 2 electrode is passed through gold thread conducting in PCB substrate 1;
E, pressing mold: use packaging plastic to be molded in PCB substrate 1 by mold die;
F, baking: packaging plastic is solidified by baking;
G, cutting: product is cut into design size.
Packaging plastic in step e can adopt Epoxy or Silicone.
Should be appreciated that specific embodiment described above only for explaining the present invention, being not intended to limit the present invention.Still be among protection scope of the present invention by spirit institute's apparent change of extending out of the present invention or change.

Claims (8)

1. an extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element, comprise substrate (1) and at least two emitting LED chip (2), described at least two emitting LED chip (2) are fixed on substrate (1), it is characterized in that: described substrate (1) is provided with some vias penetrating bottom surface on it, electric conductor (3) is filled with in this via, the positive pole of described each emitting LED chip (2) is electrically connected with the electric conductor (3) in wherein at least one via respectively by positive wire (4), the negative pole of each emitting LED chip (2) is electrically connected with the electric conductor (3) in remaining via respectively by cathode conductor (5).
2. extra small ultra-thin specular removal Quartering shot type according to claim 1 highlighted white light polycrystalline LED element, is characterized in that: described electric conductor (3) is copper post or conducting resinl.
3. extra small ultra-thin specular removal Quartering shot type according to claim 1 highlighted white light polycrystalline LED element, it is characterized in that: the bottom surface of described substrate (1) is coated with the first metal conducting layer (6), this metal conducting layer (6) is divided into mutually discrete positive pole zone (61) and negative regions (62), described negative regions (62) covers electric conductor (3) below be connected with cathode conductor (5), and contact with this electric conductor (3), described positive pole zone (61) covers electric conductor (3) below be connected with positive wire (4), and contact with this electric conductor (3).
4. extra small ultra-thin specular removal Quartering shot type according to claim 1 highlighted white light polycrystalline LED element, it is characterized in that: the upper bottom surface of described substrate (1) is coated with the second metal conducting layer (7), this metal conducting layer (7) is divided into mutually discrete positive pole zone (71) and negative regions (72), described negative regions (72) covers electric conductor (3) top be connected with cathode conductor (5), and contact with this electric conductor (3), described positive pole zone (71) covers electric conductor (3) top be connected with positive wire (4), and contact with this electric conductor (3), described at least two emitting LED chip (2) are connected on the second metal conducting layer (7), described each positive wire (4) is electrically connected with positive pole zone (71), described each cathode conductor (5) is electrically connected with negative regions (72).
5. the extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element according to claim 3 or 4, is characterized in that: described first and second metal conducting layers (6,7) are Gold plated Layer or silver coating or copper foil layer.
6. extra small ultra-thin specular removal Quartering shot type according to claim 1 highlighted white light polycrystalline LED element, is characterized in that: described substrate (1) is PCB substrate.
7. extra small ultra-thin specular removal Quartering shot type according to claim 1 highlighted white light polycrystalline LED element, is characterized in that: described emitting LED chip (2) is provided with two or three.
8. a preparation technology for the extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element as described in claim 1 ~ 7, is characterized in that step is as follows:
A, preparation raw material: above bore via in PCB substrate (1) and adopt copper insert process by upper for PCB substrate (1) bottom surface conducting, forming consent copper post (3);
B, die bond: emitting LED chip (2) is attached in PCB substrate (1) by crystal-bonding adhesive;
C, baking: emitting LED chip (2) is fixed in PCB substrate (1) by baking;
D, bonding wire: emitting LED chip (2) electrode is passed through gold thread conducting in PCB substrate (1);
E, pressing mold: use packaging plastic to be molded in PCB substrate (1) by mold die;
F, baking: packaging plastic is solidified by baking;
G, cutting: product is cut into design size.
CN201410292578.9A 2014-06-25 2014-06-25 Ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element Pending CN105321937A (en)

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CN201410292578.9A CN105321937A (en) 2014-06-25 2014-06-25 Ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element

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CN105321937A true CN105321937A (en) 2016-02-10

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107806574A (en) * 2017-11-17 2018-03-16 夏烬楚 A kind of LED illumination light source
CN108287436A (en) * 2018-01-31 2018-07-17 武汉华星光电技术有限公司 Backlight module and liquid crystal display device
CN110473945A (en) * 2018-05-09 2019-11-19 深圳市聚飞光电股份有限公司 LED support and LED with circuit
CN111781769A (en) * 2019-04-03 2020-10-16 京东方科技集团股份有限公司 Backlight assembly and liquid crystal display device
CN113130730A (en) * 2020-01-16 2021-07-16 深圳市聚飞光电股份有限公司 Light emitting device packaging method and light emitting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1531139A (en) * 2003-03-14 2004-09-22 Lg Active intelligent antenna system and producing method thereof
US20040222433A1 (en) * 2003-05-05 2004-11-11 Lamina Ceramics Light emitting diodes packaged for high temperature operation
US20100059785A1 (en) * 2008-09-05 2010-03-11 Advanced Optoelectronic Technology Inc. Light emitting device and method of fabricating the same
CN102252219A (en) * 2010-05-28 2011-11-23 深圳市聚飞光电股份有限公司 Light-emitting diode (LED) street lamp and high-power LED device
CN102637815A (en) * 2012-04-16 2012-08-15 深圳市安培盛科技有限公司 High-heat-conduction LTCC (low temperature co-fired ceramic) substrate
CN204155931U (en) * 2014-06-25 2015-02-11 常州欧密格光电科技有限公司 A kind of extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1531139A (en) * 2003-03-14 2004-09-22 Lg Active intelligent antenna system and producing method thereof
US20040222433A1 (en) * 2003-05-05 2004-11-11 Lamina Ceramics Light emitting diodes packaged for high temperature operation
US20100059785A1 (en) * 2008-09-05 2010-03-11 Advanced Optoelectronic Technology Inc. Light emitting device and method of fabricating the same
CN102252219A (en) * 2010-05-28 2011-11-23 深圳市聚飞光电股份有限公司 Light-emitting diode (LED) street lamp and high-power LED device
CN102637815A (en) * 2012-04-16 2012-08-15 深圳市安培盛科技有限公司 High-heat-conduction LTCC (low temperature co-fired ceramic) substrate
CN204155931U (en) * 2014-06-25 2015-02-11 常州欧密格光电科技有限公司 A kind of extra small ultra-thin specular removal Quartering shot type highlighted white light polycrystalline LED element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
郎为民和稽英华: "《表面组装技术(SMT)及其应用》", 30 September 2007, 北京:机械工业出版社 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107806574A (en) * 2017-11-17 2018-03-16 夏烬楚 A kind of LED illumination light source
CN108287436A (en) * 2018-01-31 2018-07-17 武汉华星光电技术有限公司 Backlight module and liquid crystal display device
CN110473945A (en) * 2018-05-09 2019-11-19 深圳市聚飞光电股份有限公司 LED support and LED with circuit
CN111781769A (en) * 2019-04-03 2020-10-16 京东方科技集团股份有限公司 Backlight assembly and liquid crystal display device
CN113130730A (en) * 2020-01-16 2021-07-16 深圳市聚飞光电股份有限公司 Light emitting device packaging method and light emitting device

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Application publication date: 20160210