CN111653655A - Inorganic lamp bead and packaging method thereof - Google Patents
Inorganic lamp bead and packaging method thereof Download PDFInfo
- Publication number
- CN111653655A CN111653655A CN202010300056.4A CN202010300056A CN111653655A CN 111653655 A CN111653655 A CN 111653655A CN 202010300056 A CN202010300056 A CN 202010300056A CN 111653655 A CN111653655 A CN 111653655A
- Authority
- CN
- China
- Prior art keywords
- inorganic
- lamp bead
- bowl
- eutectic
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011324 bead Substances 0.000 title claims abstract description 43
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 230000004907 flux Effects 0.000 claims abstract description 33
- 239000011261 inert gas Substances 0.000 claims abstract description 29
- 238000005476 soldering Methods 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000005496 eutectics Effects 0.000 claims description 46
- 229910000679 solder Inorganic materials 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000012858 packaging process Methods 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000009461 vacuum packaging Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 7
- 229920000647 polyepoxide Polymers 0.000 abstract description 7
- 238000005086 pumping Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 239000006071 cream Substances 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 239000000565 sealant Substances 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 241001417527 Pempheridae Species 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004332 deodorization Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000002147 killing effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an inorganic lamp bead and a packaging method thereof. This inorganic lamp pearl includes: LED chip, support and apron, the support include: the base plate and the bowl cup that sets up at the base plate upper surface, the LED chip pass through scaling powder or tin cream and fix on the base plate to form electric connection with the electrode on the base plate, the apron pass through scaling powder or tin cream and fix the port department at the bowl cup, the LED chip encapsulated in the encapsulation space that support and apron formed, and this encapsulation space is vacuum state or pours into inert gas. For the inorganic lamp bead, organic adhesives such as epoxy resin and the like are not adopted, and inorganic substances such as soldering flux or tin paste are adopted as the adhesives to fix the cover plate, so that the damage of the deep ultraviolet LED to the sealant is avoided, and the service life of the product is prolonged. The packaging method of the invention firstly arranges the metal coating on the outer edge of the cover plate, and then carries out vacuum pumping, vacuum breaking or further inert gas injection, and the packaging method has simple process and higher efficiency.
Description
The technical field is as follows:
the invention relates to the technical field of LED lamp beads and packaging methods thereof, in particular to an inorganic lamp bead and a packaging method thereof.
Background art:
because ultraviolet rays have a good virus killing effect, ultraviolet lamps are arranged in a plurality of household appliances (such as refrigerators, cabinets, floor sweepers and the like) for disinfection and sterilization. The traditional ultraviolet mercury lamp is forbidden to use at present because of containing mercury element, so the ultraviolet light source which is preferred at present adopts a deep ultraviolet LED. The ultraviolet LED has a central wavelength of 400nm or less, is called a near ultraviolet LED when the wavelength of light is more than 380nm, and is called a deep ultraviolet LED when the wavelength of light is less than 300nm, and has a high sterilization effect on short-wavelength light, so that the deep ultraviolet LED has been widely used in various products with sterilization and deodorization at present.
The current deep ultraviolet LED has the defects of low production efficiency and short service life due to the insufficient packaging process. Since the high power deep ultraviolet has a stronger destructive effect on organic matters, the conventional epoxy resin encapsulation cannot be used. In view of this, the current deep ultraviolet LED adopts the following packaging process.
See reference 1, chinese patent numbers: 201820155005.5, discloses a deep ultraviolet LED packaging structure, the technical scheme of its adoption is: the deep ultraviolet LED packaging structure comprises a ceramic support, a deep ultraviolet LED chip, quartz glass and a metal coating; the ceramic support is of a bowl-cup structure, and the deep ultraviolet LED chip is arranged inside the ceramic support; the quartz glass is arranged at the upper end of the ceramic support, and a closed cavity is formed between the quartz glass and the ceramic support; the metal coating is coated on the outer surface of the closed cavity, but the outer surface does not comprise the bottom surface of the closed cavity and the outer surface area of the quartz glass, which is just opposite to the inner part of the closed cavity. According to the invention, the metal coating is covered on the outer surface of the closed cavity, so that the binding force and the sealing property of quartz glass and the ceramic support are improved; the problem of the separation of quartz glass and ceramic support that deep ultraviolet LED packaging structure work for a long time is solved, the reliability of deep ultraviolet LED packaging structure is improved.
The reference 1 is to encapsulate a deep ultraviolet LED chip in a cavity formed by a ceramic support and seal the cavity by quartz glass, and also mentions vacuuming or filling the cavity with an inert gas, but it still has the following disadvantages: in the reference 1, the quartz glass is fixed at the port of the bracket through the UV glue, and the outer metal coating forms a semi-coated fixing structure for the two, so that although the bonding force between the two can be improved, water molecules can penetrate into a glue interface along the hydrophilic metal surface under the action of water vapor with the continuous increase of the service time of the UV glue, so that the adhesion effect is reduced, and the air tightness of the cavity is damaged. In addition, local metal coating operation is carried out outside two different materials of the bracket and the quartz glass, the process is very complex, the yield is not high, the production efficiency is low, and the product cost is high.
In the comparison document 2, the bowl cup is provided with the concave step for bearing the glass assembly, the structure can improve the stability of the product, but the technical scheme cannot be applied to the deep ultraviolet LED chip packaging process because the bowl cup still adopts silica gel-epoxy resin as sealant.
In view of the above situation, the present inventors have made improvements and have proposed the following technical solutions.
The invention content is as follows:
the invention aims to overcome the defects of the prior art and provide the inorganic lamp bead and the packaging method thereof, which have simple structure and simple operation and can greatly improve the production efficiency.
In order to solve the technical problems, the inorganic lamp bead adopts the following technical scheme: an inorganic lamp bead, comprising: LED chip, support and apron, the support include: the base plate and the bowl cup that sets up at the base plate upper surface, the LED chip pass through scaling powder or tin cream welded fastening on the base plate to form electric connection with the electrode on the base plate, the apron pass through scaling powder or tin cream welded fastening in the port department of bowl cup, the LED chip encapsulated in the encapsulation space that support and apron formed, and this encapsulation space is vacuum state or pours into inert gas.
Further, in the above technical solution, the cover plate includes: the glass plate and set up the metal frame in the glass plate outer fringe.
Further, in the above technical solution, a step portion for bearing the cover plate is formed on an inner edge of the bowl port, and the metal frame on the cover plate is fixed on the step portion by soldering flux or solder paste.
Further, in the above technical solution, the glass plate is made of quartz glass or sapphire glass, and the metal frame is a metal plating layer.
Further, in the above technical solution, the substrate is made of a ceramic material.
Further, in the above technical solution, the bowl is made of a metal material, or the bowl and the area of the cover plate corresponding to the metal edge are made of a metal material; the metal frame on the cover plate is fixed with the bowl cup through soldering flux or solder paste.
In order to solve the technical problems, the inorganic lamp bead adopts the following technical scheme: the packaging method comprises the following steps: respectively dispensing soldering flux or solder paste on the position of the surface of the substrate for mounting the chip and the position of the port of the bowl cup for bearing the cover plate; the second step is that: placing the chip at a corresponding position on the substrate, and placing the cover plate at a corresponding position on the port of the bowl cup; the third step: carry out electric connection to the chip through the eutectic equipment, bonded apron and bowl cup simultaneously, the eutectic in-process, lamp pearl are in one and seal in the eutectic cavity to select any one kind of treatment mode once: the first method is as follows: firstly, vacuumizing the eutectic cavity by using vacuumizing equipment to enable the packaging space of the lamp beads to reach a corresponding vacuum state, then gradually vacuumizing the eutectic cavity, and finally completing the packaging process after soldering flux or tin paste is solidified to obtain the lamp beads with vacuum packaging space; the second method comprises the following steps: firstly, vacuumizing the eutectic cavity through vacuumizing equipment to enable the packaging space of the lamp beads to reach a corresponding vacuum state, then injecting inert gas into the eutectic cavity to enable the packaging space to be filled with the inert gas, and finally completing the packaging process after soldering flux or solder paste is solidified to obtain the lamp beads with the packaging space filled with the inert gas. Further, in the above technical scheme, in the third step, the bead is heated by eutectic equipment before the soldering flux or the solder paste is cured, and the heating temperature is-centigrade.
Further, in the above technical solution, the inert gas is nitrogen.
After the technical scheme is adopted, compared with the prior art, the invention has the following advantages that:
1. for the inorganic lamp bead, organic adhesives such as epoxy resin and the like are not adopted, and inorganic substances such as soldering flux or tin paste are adopted as the adhesives to fix the cover plate, so that the damage of the deep ultraviolet LED to the sealant is avoided, and the service life of the product is prolonged.
2. In order to improve the bonding force and the tightness between the cover plate and the bracket, the inorganic lamp bead is firstly provided with a circle of metal coating on the outer edge of the cover plate, and then the metal coating is bonded with the metal bowl through soldering flux or solder paste, so that the bonding force is enhanced, the corrosion of oxygen, moisture and other various pollutants can be effectively resisted, and the service life of the product is further prolonged.
3. For the packaging method of the invention, the metal coating is firstly arranged at the outer edge of the cover plate, then the vacuum pumping and breaking (or the inert gas injection) are carried out, the process is simple, the whole packaging process can be completed within 60 minutes, and the existing other packaging processes need ten minutes or even longer time, so the packaging method of the invention has higher efficiency, and can greatly reduce the manufacturing cost of products.
Description of the drawings:
FIG. 1 is a schematic structural view of an inorganic lamp bead according to the present invention;
FIG. 2 is a schematic view of the inorganic bead of the present invention during encapsulation;
FIG. 3 is a schematic structural diagram of a second embodiment of a cover plate according to the present invention;
fig. 4 is a schematic structural diagram of another embodiment of the cover plate in the invention.
The specific implementation mode is as follows:
the invention is further illustrated below with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1, the inorganic lamp bead of the present invention includes: LED chip 1, support 2 and apron 3.
The LED chip 1 adopts the deep ultraviolet LED chip, combines this embodiment to show, and this LED chip is flip chip, and the electrode of chip is located the bottom promptly, can directly carry out the paster through scaling powder or tin cream, need not to weld the gold thread.
The support 2 comprises: a base plate 21, a bowl 22 and an electrode 23, wherein the base plate 21 is made of a ceramic substrate, the bowl 22 is made of a metal material, or an inorganic material (e.g. a ceramic material) with a metal coating on the surface is used, or at least a metal material is arranged in a region where the cover plate 3 is butted (e.g. a metal coating is arranged in the region). The bowl cup 22 is disposed on the upper surface of the substrate 21 and forms a bowl shape around the substrate so as to form the package space 10 for accommodating the LED chip 1. The electrodes 23 are made of metal sheets or metal plating as conductive parts, and one end of each of the positive and negative electrodes 23 is located on the upper surface of the substrate 21, and the other end is led out downward from the bottom surface of the substrate 21.
In the preferred embodiment, the inner edge of the port of the bowl 22 is formed with a step 221 for carrying the cover plate 3. In addition, the base plate 21, the bowl 22 and the electrode 23 can be integrally formed and fixed together, and in order to improve the heat conduction efficiency, the metal material for forming the bowl 22 is led out from the bottom surface of the base plate 21, and a heat conduction layer 220 is formed on the bottom surface of the base plate 21.
The cover plate 3 comprises: a glass plate 31 and a metal frame 32 provided on the outer edge of the glass plate 31. The glass plate 31 is made of quartz glass or sapphire glass, and the metal frame 32 is a metal coating. Typically, the metal frame 32 is selectively copper plated. The metal rim 32 serves as a weld attachment to the bowl 22. Because the invention adopts the soldering flux or the solder paste as the bonding material, and if the material is directly bonded with metal and glass materials, the condition that welding cannot be carried out or welding is not firm can occur, the invention firstly arranges the metal frame 32 at the outer edge of the glass plate 31, and the metal frame 32 and the metal material of the bowl cup 22 are welded and fixed, thereby ensuring the bonding force and the sealing property between the metal frame 32 and the metal material of the bowl cup 22. Of course, the metal frame 32 may be formed by a metal layer or by a damascene process.
During packaging, the LED chip 2 is fixed on the substrate 21 by soldering flux or solder paste, and is electrically connected to the electrode 23 on the substrate 21, and the metal frame 32 on the cover plate 3 is fixed on the step 221 by soldering flux or solder paste. The LED chip 1 is packaged in a packaging space 10 formed by the support 2 and the cover plate 3, and the packaging space 10 is in a vacuum state or filled with inert gas.
The packaging method of the present invention is further described below with reference to fig. 2.
Before packaging, the LED chip 1, the support 2 and the cover plate 3 are prepared as described above. Simultaneously, one LED eutectic device is used, and the specific packaging process is as follows:
the first step is as follows: the substrate 21 is placed on a worktable 41 of the eutectic device 4, and the worktable 41 is provided with an exhaust hole 411 for vacuum pumping and an air inlet hole 412 for air inflation. Respectively dispensing flux or solder paste on the surface of the substrate 21 at the position for mounting the chip 1 and the stepped part 221 of the port of the bowl 22;
the second step is that: placing the chip 1 at a corresponding position on the substrate 21, and placing the cover plate 3 at a corresponding position at the port of the bowl 22;
the third step: carry out electric connection to the chip through eutectic equipment 4, the bonding apron 3 and bowl cup 22 simultaneously, the eutectic in-process, need make the lamp pearl be in the enclosure space to heat, the while heating temperature should be higher than the fusing point of scaling powder or tin cream. Any one of the following treatment methods can be selected according to the requirements of the final product:
the first method is as follows: the packaging space is a vacuum lamp bead.
First, the lamp bead is positioned in a closed eutectic chamber 40. For example, as shown in fig. 2, a cover 42 is covered on the working table 41, a closed eutectic cavity 40 is formed by the cover 42 and the working table 41, and then the eutectic cavity 40 is evacuated through an evacuation device through an evacuation hole 411. At the same time, the bead needs to be heated to melt the flux or solder paste on the surface of the substrate 21 and the step 221 of the bowl 22. When the air pressure in the eutectic cavity 40 gradually decreases, a larger pressure difference is formed between the air pressure in the packaging space 10 in the lamp bead and the air pressure in the external eutectic cavity 40. Meanwhile, the soldering flux or the solder paste is in a molten state, and the gas in the packaging space 10 easily penetrates into the external eutectic cavity 40, so that the inside of the packaging space 10 gradually reaches a vacuum state. Because the vacuum-pumping operation is performed on the eutectic space 40, the space is small, and the vacuum-pumping can be completed in a short time. According to the requirement of the product on the vacuum degree, the vacuumizing operation time of the invention can be finished within 5-10 seconds generally.
Then, the eutectic cavity 40 is gradually subjected to vacuum breaking treatment, i.e., gas is filled into the eutectic cavity 40 through the gas inlet 412, so that the pressure in the eutectic cavity 40 reaches the standard pressure.
And finally, stopping heating, and finishing the packaging process after the soldering flux or the solder paste is cured to obtain the lamp bead with the vacuum packaging space 10.
In the packaging process, the heating temperature of the eutectic device 4 is set according to the melting point of the flux or the solder paste, for example, the melting point of the low-temperature solder paste is 138 ℃, and the melting point of the high-temperature solder paste can reach 300 ℃, so the heating temperature is usually 120 ℃ to 400 ℃. If soldering is to be performed using a flux,
the second method comprises the following steps: and the packaging space is filled with inert gas.
Firstly, in the same way as the first mentioned above, the eutectic cavity 40 is vacuumized by a vacuuming device, so that the encapsulation space 10 of the lamp bead reaches a corresponding vacuum state.
Then, by injecting an inert gas into the eutectic cavity 40, that is, by filling the inert gas into the eutectic cavity 40 through the gas inlet 412, in order to enable the inert gas to be filled into the encapsulation space 10, the inert gas filled into the eutectic cavity 40 should be higher than the standard gas pressure, for example, the gas pressure of the eutectic cavity 40 is 20MPa, and at this time, the high-pressure gas in the eutectic cavity 40 can easily penetrate into the encapsulation space 10 inside, so that the encapsulation space 10 is gradually filled with the inert gas.
And finally, completing the packaging process after the soldering flux or the solder paste is cured to obtain the lamp bead with the packaging space 10 filled with the inert gas.
And secondly, filling inert gas into the packaging space 10 on the basis of the first mode, wherein when the inert gas is filled, the inert gas is easily filled as long as the air pressure in the eutectic space is ensured to be large enough and the soldering flux or the solder paste at the step part 221 of the bowl 22 is in a molten state, and the operation time of filling the inert gas can be generally completed within 10-15 seconds.
In the second preferred embodiment, the melting point of the flux or the solder paste on the surface of the substrate 21 is higher than the melting point of the flux or the solder paste at the step 221 of the bowl 22. For example, the melting point of the flux or solder paste on the surface of the substrate 21 is 240 degrees celsius, and the melting point of the flux or solder paste on the step 221 of the bowl 22 is 180 degrees celsius. In the vacuum-pumping operation, the heating temperature of the eutectic device 4 first reaches a temperature higher than the temperature of 240 facilities (e.g. 260-. After the vacuum pumping is completed, the heating temperature of the eutectic device 4 is first reduced to 180-240 ℃ (for example, 200 ℃), and at this time, the soldering flux or the solder paste on the surface of the substrate 21 is gradually solidified, so as to implement the eutectic operation of the LED chip, but the soldering flux or the solder paste at the step portion 221 of the bowl 22 is still in a molten dilute liquid state, and at this time, the inert gas in the eutectic space 40 can enter the package space 10, so as to complete the operation of filling the inert gas into the package space 10. Finally, the heating temperature of the eutectic device 4 is further reduced to below 180 ℃, so that the soldering flux or the solder paste at the step part 221 of the bowl 22 is solidified, and the cover plate 3 is packaged and cured.
In order to improve the heating efficiency, the heating mode of the eutectic device 4 in the invention can be directly heating through the workbench 41, namely, the heat source is directly conducted through the workbench 41, so that the heating from bottom to top is realized. In combination with the above, in order to improve the heat conduction efficiency, the metal material for forming the bowl 22 is led out from the bottom surface of the substrate 21, and a heat conduction layer 220 is formed on the bottom surface of the substrate 21. When the table 41 is heated, the heat is directly applied to the base plate 21 and the bowl 22 by forming the heat conductive layer 220 on the bottom surface of the base plate 21, and the heating efficiency is higher.
In the above-described packaging method, the eutectic device 4 may preferably adopt a technical solution earlier proposed by the inventor, as described in the following patent application nos.: 201910424791.3 discloses a fully automatic vacuum eutectic device.
In summary, for the inorganic lamp bead of the present invention, organic adhesives such as epoxy resin are not used, and inorganic substances such as soldering flux or solder paste are used as the adhesives to fix the cover plate, so as to avoid the damage of the deep ultraviolet LED to the sealant and improve the service life of the product. For the packaging method, the metal coating is firstly arranged on the outer edge of the cover plate, then the vacuumizing and vacuum breaking (or the inert gas is further injected) are carried out, the process is simple, the whole packaging process can be finished within 60, the packaging method has higher efficiency, and the manufacturing cost of the product can be greatly reduced.
It should be understood that the above description is only exemplary of the present invention, and is not intended to limit the scope of the present invention, which is defined by the appended claims.
Claims (9)
1. An inorganic lamp bead, comprising: LED chip (1), support (2) and apron (3), support (2) include: base plate (21), set up bowl cup (22) at base plate (21) upper surface, LED chip (2) pass through welded fastening on base plate (21) to form electric connection, its characterized in that with electrode (23) on base plate (21): the utility model discloses a LED lamp, including apron (3), support (2) and apron (3), apron (3) pass through welded fastening at the port department of bowl cup (22), LED chip (1) encapsulated in encapsulation space (10) that support (2) and apron (3) formed, and this encapsulation space (10) are vacuum state or fill into inert gas.
2. The inorganic lamp bead of claim 1, wherein: the cover plate (3) comprises: a glass plate (31) and a metal frame (32) arranged on the outer edge of the glass plate (31).
3. The inorganic lamp bead of claim 2, wherein: a step part (221) for bearing the cover plate (3) is formed on the inner edge of the port of the bowl cup (22), and the metal frame (32) on the cover plate (3) is fixed on the step part (221) through welding.
4. The inorganic lamp bead of claim 2, wherein: the glass plate (31) is made of quartz glass or sapphire glass, and the metal frame (32) is a metal coating.
5. The inorganic lamp bead of claim 1, wherein: the substrate (21) is made of ceramic materials.
6. The inorganic lamp bead of claim 2, wherein: the bowl (22) is made of metal materials, or the bowl (22) and the area of the cover plate (3) corresponding to the metal edge (32) are made of metal materials; the metal frame (32) on the cover plate (3) is fixed with the bowl (22) through soldering flux or solder paste.
7. The inorganic lamp bead according to any one of claims 1-6, wherein: the packaging method of the inorganic lamp bead comprises the following steps,
the first step is as follows: respectively dispensing soldering flux or solder paste on the position of the surface of the substrate (21) for mounting the chip (1) and the position of the port of the bowl (22) for bearing the cover plate (3);
the second step is that: placing the chip (1) on the corresponding position of the substrate (21), and placing the cover plate (3) on the corresponding position of the port of the bowl (22);
the third step: carry out electric connection to the chip through eutectic equipment (4), simultaneously bonded apron (3) and bowl cup (22), the eutectic in-process, lamp pearl are in one and seal eutectic cavity (40) to select any one kind of treatment mode once:
the first method is as follows: firstly, vacuumizing the eutectic cavity (40) through vacuumizing equipment to enable the packaging space (10) of the lamp beads to reach a corresponding vacuum state, then gradually performing vacuum breaking treatment on the eutectic cavity (40), and finally completing the packaging process after soldering flux or solder paste is solidified to obtain the lamp beads with the vacuum packaging space (10);
the second method comprises the following steps: firstly, vacuumizing the eutectic cavity (40) through vacuumizing equipment to enable the packaging space (10) of the lamp beads to reach a corresponding vacuum state, then injecting inert gas into the eutectic cavity (40) to enable the packaging space (10) to be filled with the inert gas, and finally completing the packaging process after soldering flux or tin paste is solidified to obtain the lamp beads filled with the inert gas in the packaging space (10).
8. The inorganic lamp bead of claim 7, wherein: and in the third step, the lamp beads are heated by eutectic equipment (4) before the soldering flux or the solder paste is solidified, and the heating temperature is between 120 ℃ and 400 ℃.
9. The inorganic lamp bead of claim 7, wherein: the inert gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010300056.4A CN111653655A (en) | 2020-04-16 | 2020-04-16 | Inorganic lamp bead and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010300056.4A CN111653655A (en) | 2020-04-16 | 2020-04-16 | Inorganic lamp bead and packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111653655A true CN111653655A (en) | 2020-09-11 |
Family
ID=72348169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010300056.4A Pending CN111653655A (en) | 2020-04-16 | 2020-04-16 | Inorganic lamp bead and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111653655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838015A (en) * | 2020-12-31 | 2021-05-25 | 联晶智能电子有限公司 | Semiconductor packaging method and semiconductor device |
-
2020
- 2020-04-16 CN CN202010300056.4A patent/CN111653655A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838015A (en) * | 2020-12-31 | 2021-05-25 | 联晶智能电子有限公司 | Semiconductor packaging method and semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106449542B (en) | A kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form | |
| CN106784243B (en) | A kind of deep ultraviolet LED packaging and preparation method thereof | |
| TWI476877B (en) | Structure and method for air cavity packaging | |
| CN110521011A (en) | The manufacturing method of optical semiconductor device and optical semiconductor device | |
| CN106531858B (en) | Ultraviolet LED packaging method | |
| CN103066192B (en) | Semiconductor light emitting light source and manufacture the method for this light source and semiconductor luminous chip | |
| CN102951594B (en) | Tube shell for vacuum package of micro-optical-electronic-mechanic system and manufacture method thereof | |
| CN107146788A (en) | A kind of high-power deep ultraviolet LED/light source module and preparation method thereof | |
| CN108054252A (en) | A kind of high density adjustable color COB manufacturing methods | |
| CN110400860A (en) | A kind of UV LED full-inorganic sealing structure and preparation method thereof | |
| CN109473512A (en) | A kind of full-inorganic LED light and its packaging method | |
| CN211404527U (en) | Inorganic lamp bead | |
| CN103872212B (en) | LED (light-emitting diode) packaging method | |
| CN111653655A (en) | Inorganic lamp bead and packaging method thereof | |
| CN203910858U (en) | Fully-inorganic surface-mount LED packaging structure | |
| CN103236490A (en) | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device | |
| CN109273371A (en) | A kind of encapsulating structure of power semiconductor part and packaging method | |
| CN106356437B (en) | A kind of white light LED packaging device and preparation method thereof | |
| CN110707199B (en) | Deep ultraviolet LED device and packaging method thereof | |
| CN211045466U (en) | Ultraviolet L ED packaging device | |
| CN105140374A (en) | Routing-free LED packaging structure and preparation method therefor | |
| CN102044621A (en) | Wafer-level glass ball cavity package method for light emitting diode flip chip | |
| CN210743971U (en) | Deep ultraviolet LED device | |
| CN109273372A (en) | A kind of encapsulating structure of power semiconductor part and packaging method | |
| CN205723615U (en) | A kind of packaging system based on NCSP encapsulation technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |