CN206471354U - A kind of LED die bonds barrier film and LED package - Google Patents
A kind of LED die bonds barrier film and LED package Download PDFInfo
- Publication number
- CN206471354U CN206471354U CN201720169848.6U CN201720169848U CN206471354U CN 206471354 U CN206471354 U CN 206471354U CN 201720169848 U CN201720169848 U CN 201720169848U CN 206471354 U CN206471354 U CN 206471354U
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- layer
- metal
- die bond
- led
- barrier film
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Abstract
The utility model provides a kind of LED die bonds barrier film and the LED package with the LED die bond barrier films.Its LED die bonds barrier film includes the stepped construction of electron transfer barrier layer/first intermediate metal/metal die bond layer, using the LED die bond barrier films of the stepped construction of electron transfer barrier layer/first intermediate metal/metal die bond layer, metal die bond layer is used to carry out die bond, electron transfer barrier layer between the electrode of flip LED chips（Such as metal copper layer）Can effectively barrier metal die bond layer and the electron transfer for aiding in the tin cream of die bond, helping layer etc., it adds LED service life with LED package.
Description
Technical field
The utility model is related to LED encapsulation fields, and in particular to a kind of effectively to prevent LED from producing electron transfer after encapsulating
LED die bonds barrier film and the LED package with the LED die bond barrier films.
Background technology
LED（Light Emitting Diode）, light emitting diode is a kind of can to convert electrical energy into consolidating for visible ray
The semiconductor devices of state, electricity directly can be converted into light by it.The appearance of LED, relative to ordinary lamps（Incandescent lamp etc.）Have
Energy-conservation, long lifespan, applicability are good, the response time is short, it is environmentally friendly the advantages of.
In the market, the advantages of flip LED is due to its high current and high radiating, be widely used in LED automobile lamp,
CSP and upside-down mounting are integrated, and because its long-term high current is used, and welding material is mainly tin material, during long-term use,
Extremely easily occur in electron transfer to the electrode pad of package substrate, ultimately result in that voidage is bigger than normal, influence LED/light source is led
Electricity and radiating, ultimately result in dead lamp.
So the method that must be selected a kind of not only easy operation but also can reduce voidage, makes heat conduction tin cream avoid occurring electricity
Son migration.
Utility model content
Therefore, the utility model provides a kind of LED die bonds barrier film and tool for effectively preventing LED from producing electron transfer after encapsulating
There is the LED package of the LED die bond barrier films.
To reach above-mentioned purpose, a kind of LED die bonds barrier film that the utility model is provided, including：Electron transfer barrier layer,
One intermediate metal and metal die bond layer, first intermediate metal are arranged on electron transfer barrier layer surface, the metal
Die bond layer is arranged on the first metal transfer layer surface, and then forms a stepped construction.
A kind of preferred scheme of the present utility model, in addition to：Second intermediate metal and metallic bond layer, second gold medal
Category transition zone is arranged on the back side of electron transfer barrier layer, and the metallic bond layer is arranged on the surface of the second intermediate metal.
Another preferred scheme of the present utility model, second intermediate metal is metal nickel dam or metallic chromium layer.
Another preferred scheme of the present utility model, the metallic bond layer is gold-tin alloy layer.
Another preferred scheme of the present utility model, the electron transfer barrier layer is metal copper layer.
Another preferred scheme of the present utility model, first intermediate metal is metal nickel dam or metallic chromium layer.
Another preferred scheme of the present utility model, the metal die bond layer is gold-tin alloy layer.
Another preferred scheme of the present utility model, the periphery of the metal die bond layer upper surface is additionally provided with an insulation and enclosed
Dam.
Another preferred scheme of the present utility model, the surface of the metal die bond layer is additionally provided with one and helps layer.
The utility model also provides a kind of LED package, including：Package substrate, die bond solder paste and flip LED chips, also
Including any described LED die bond barrier films as described above, the metal die bond layer of the LED die bonds barrier film is arranged on package substrate upward
Electrode on, the die bond solder paste is coated in the metal die bond layer surface of LED die bond barrier films, the electrode of the flip LED chips
By die bond solder paste die bond on metal die bond layer.
The technical scheme provided by the utility model, has the advantages that：
Using the LED die bond barrier films of the stepped construction of electron transfer barrier layer/first intermediate metal/metal die bond layer,
Metal die bond layer is used to carry out die bond, electron transfer barrier layer between the electrode of flip LED chips（Such as metal copper layer）Can have
Barrier metal die bond layer and the electron transfer for aiding in the tin cream of die bond, helping layer etc. are imitated, LED service life is added.
Brief description of the drawings
Fig. 1 show the structural representation of LED die bonds barrier film in embodiment one；
Fig. 2 show the structural representation of LED die bonds barrier film in embodiment two；
Fig. 3 show the structural representation of LED package in embodiment.
Embodiment
To further illustrate each embodiment, the utility model is provided with accompanying drawing.These accompanying drawings are in the utility model is disclosed
A part for appearance, it is mainly to illustrate embodiment, and running of the associated description of specification to explain embodiment can be coordinated former
Reason.Coordinate and refer to these contents, those of ordinary skill in the art will be understood that other possible embodiments and this practicality are new
The advantage of type.Component in figure is not necessarily to scale, and similar element numbers are conventionally used to indicate similar component.
The utility model is further illustrated in conjunction with the drawings and specific embodiments.
Embodiment one
Shown in reference picture 1, a kind of LED die bonds barrier film 1 that the present embodiment is provided, including：Electron transfer barrier layer 10, first
Intermediate metal 21 and metal die bond layer 30, the electron transfer barrier layer 10 is metal copper layer 10, and its thickness is arranged on 0.2-
0.5mm.First intermediate metal 21 is metal nickel dam 21, and metal nickel dam 21 is set by way of electronics evaporation or sputter
On the surface of metal copper layer 10, its thickness is arranged between 0.1-0.3mm.The metal die bond layer 30 is gold-tin alloy layer 30,
Gold-tin alloy layer 30 is arranged on the surface of the first intermediate metal 21 by way of electronics evaporation or sputter, and its thickness is arranged on
0.1-0.5mm.And then form the LED die bonds barrier film 1 of a stepped construction.The periphery of 30 upper surface of metal die bond layer is additionally provided with
One insulation box dam 40, the material of the insulation box dam 40 is transparent silica gel.
In the present embodiment, electron transfer barrier layer 10 is metal copper layer 10, and metallic copper stability is good to have preferably isolation
The effect of tin electron transfer.
In the present embodiment, first intermediate metal 21 is metal nickel dam 21, and metal nickel dam 21 is used as metal copper layer 10
Adhesive layer between metal die bond layer 30, plays a part of transition, meanwhile, metal nickel dam 21 has higher reflecting effect.
In other embodiments, it would however also be possible to employ metallic chromium layer is substituted.
In the present embodiment, the metal die bond layer 30 is gold-tin alloy layer 30, when gold-tin alloy layer 30 can be with follow-up encapsulation
Die bond solder paste and LED chip electrode（LED core plate electrode surface material is gold）There is stronger joint capacity, contact is good,
Electric conductivity is strong.
Embodiment two
Shown in reference picture 2, a kind of LED die bonds barrier film 1 that the present embodiment is provided, a kind of structure substantially phase with embodiment
Together, unlike unique, in addition to：Second intermediate metal 22 and metallic bond layer 50, second intermediate metal 22 is
Metal nickel dam 22, second intermediate metal 22 is arranged on the back of the body of electron transfer barrier layer by way of electronics evaporation or sputter
Face, can be by the way of two-sided evaporation or sputter simultaneously by second metal in the first intermediate metal 21 of evaporation or sputter
Transition zone 22 is plating to the back side of electron transfer barrier layer 10, and the thickness of the second intermediate metal 22 can be with the first intermediate metal 21
Thickness it is identical or different.The metallic bond layer 50 is consistent with the material of metal die bond layer 30, is gold-tin alloy layer, is steaming
When plating or jet-plating metallization die bond layer 30, equally the metallic bond layer 50 can be plating to second by the way of two-sided evaporation or sputter
The surface of intermediate metal 22, the mode of two-sided evaporation or sputter is prior art, be will not be described in detail herein.
In the present embodiment, the metallic bond layer 50 is consistent with the material of metal die bond layer 30, convenient to use two-sided evaporation
Or the mode of sputter is prepared simultaneously.In other embodiments, the metal engagement of unlike material can be additionally prepared according to real needs
Layer 50.
Shown in reference picture 3, the utility model also provides a kind of LED package, including：Package substrate 2, die bond solder paste（Not
Show）And flip LED chips 4, in addition to LED die bonds barrier film 1 as described above, the metal die bond of the LED die bonds barrier film 1
Layer 30 is arranged on the electrode 3 of package substrate 2 upward, specifically, the bottom of electron transfer barrier layer 10 of LED die bonds barrier film 1 leads to
Cross a conductive adhesive layer（Prior art, such as elargol, tin cream）It is fixedly bonded on the electrode 3 of package substrate 2；Either LED consolidates
The metallic bond layer 50 of brilliant barrier film 1 is fixedly bonded on the electrode 3 of package substrate 2 by a conductive adhesive layer.
The die bond solder paste is coated on 30 surface of metal die bond layer of the LED die bonds barrier film 1 in insulation box dam 40, and by
Insulation box dam 40 is enclosed, the electrodes 5 of the flip LED chips 4 by die bond solder paste die bond on metal die bond layer 30, and then
By the die bond of LED die bonds barrier film 1 on package substrate 2.Insulation box dam 40, which is played, prevents that overflow causes when die bond solder paste is excessive
The effect that die bond solder paste is directly directly contacted with the electrode 3 of package substrate 2, in actual dispensing flow, if can be precisely controlled
The amount of die bond solder paste, can save insulation box dam 40.
Meanwhile, in other embodiments, to enable more preferable die bond, one can be increased in LED die bonds barrier film 1 and help layer
（It is not shown）, this helps layer to be laid on metal die bond layer surface, and this helps the material of layer is common in being encapsulated for LED die bonds to help weldering
Agent material.In die bond, layer is helped to play a part of aiding in die bond.
Electron transfer barrier layer 10 uses metal copper layer 10, can effectively stop that the tin electron transfer in die bond solder paste is extremely encapsulated
On the electrode 3 of substrate 2, it can effectively solve die bond solder paste and corrode pad（Electrode 3）The problem of, fundamentally solve due to long-term
Aging causes the voidage problem of electron transfer, it is ensured that the conduction and the capacity of heat transmission of die bond solder paste, improves service life.
Using the LED die bond barrier films of the stepped construction of electron transfer barrier layer/first intermediate metal/metal die bond layer,
Metal die bond layer is used to carry out die bond, electron transfer barrier layer between the electrode of flip LED chips（Such as metal copper layer）Can have
Barrier metal die bond layer and the electron transfer for aiding in the tin cream of die bond, helping layer etc. are imitated, LED service life is added.
Although specifically showing and describing the utility model with reference to preferred embodiment, those skilled in the art should
This is understood, is not departing from the spirit and scope of the present utility model that appended claims are limited, in form and details
On the utility model can be made a variety of changes, be protection domain of the present utility model.
Claims (10)
1. a kind of LED die bonds barrier film, it is characterised in that including：Electron transfer barrier layer, the first intermediate metal and metal die bond
Layer, first intermediate metal is arranged on electron transfer barrier layer surface, and the metal die bond layer is arranged on the first metal mistake
Layer surface is crossed, and then forms a stepped construction.
2. LED die bonds barrier film according to claim 1, it is characterised in that：Also include：Second intermediate metal and metal connect
Layer is closed, second intermediate metal is arranged on the back side of electron transfer barrier layer, and the metallic bond layer is arranged on the second gold medal
Belong to the surface of transition zone.
3. LED die bonds barrier film according to claim 2, it is characterised in that：Second intermediate metal is metal nickel dam
Or metallic chromium layer.
4. LED die bonds barrier film according to claim 2, it is characterised in that：The metallic bond layer is gold-tin alloy layer.
5. LED die bonds barrier film according to claim 1 or 2, it is characterised in that：The electron transfer barrier layer is metallic copper
Layer.
6. LED die bonds barrier film according to claim 1 or 2, it is characterised in that：First intermediate metal is metallic nickel
Layer or metallic chromium layer.
7. LED die bonds barrier film according to claim 1 or 2, it is characterised in that：The metal die bond layer is gold-tin alloy
Layer.
8. LED die bonds barrier film according to claim 1, it is characterised in that：The periphery of the metal die bond layer upper surface is also
Provided with an insulation box dam.
9. the LED die bond barrier films according to claim 1 or 8, it is characterised in that：The surface of the metal die bond layer is additionally provided with
One helps layer.
10. a kind of LED package, including：Package substrate, die bond solder paste and flip LED chips, it is characterised in that：Also include such as
Any described LED die bond barrier films of the claims 1 to 9, the metal die bond layer of the LED die bonds barrier film is arranged on envelope upward
On the electrode for filling substrate, the die bond solder paste is coated in the metal die bond layer surface of LED die bond barrier films, the flip LED chips
Electrode by crystal-bonding adhesive die bond on metal die bond layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720169848.6U CN206471354U (en) | 2017-02-24 | 2017-02-24 | A kind of LED die bonds barrier film and LED package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720169848.6U CN206471354U (en) | 2017-02-24 | 2017-02-24 | A kind of LED die bonds barrier film and LED package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206471354U true CN206471354U (en) | 2017-09-05 |
Family
ID=59707913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720169848.6U Expired - Fee Related CN206471354U (en) | 2017-02-24 | 2017-02-24 | A kind of LED die bonds barrier film and LED package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206471354U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109967914A (en) * | 2017-12-27 | 2019-07-05 | 北京康普锡威科技有限公司 | A kind of tin copper high-temp leadless preformed solder of copper core structure used for electronic packaging |
-
2017
- 2017-02-24 CN CN201720169848.6U patent/CN206471354U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109967914A (en) * | 2017-12-27 | 2019-07-05 | 北京康普锡威科技有限公司 | A kind of tin copper high-temp leadless preformed solder of copper core structure used for electronic packaging |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170905 |