CN207021284U

CN207021284U - A kind of band lens type LED encapsulation structure

Info

Publication number: CN207021284U
Application number: CN201720811846.2U
Authority: CN
Inventors: 苏水源; 王明; 邱华飞
Original assignee: Xiamen Dacol Photoelectronics Technology Co Ltd
Current assignee: Xiamen Dacol Photoelectronics Technology Co Ltd
Priority date: 2017-07-06
Filing date: 2017-07-06
Publication date: 2018-02-16
Anticipated expiration: 2027-07-06

Abstract

It the utility model is related to a kind of band lens type LED encapsulation structure, the encapsulating structure includes lens and flip LED chips, the middle part of the incidence surface of the lens has the cavity of an indent, it is additionally provided with the incidence surface of the lens positioned at the periphery of cavity and the first metal layer of mutually insulated and second metal layer, the flip LED chips are arranged in cavity, and two electrodes of the flip LED chips are exposed outside cavity, two electrodes of flip LED chips are electrically connected with the first metal layer and second metal layer respectively, to solve the problems, such as that existing CSP encapsulating structures have fragile and welding difficulty.

Description

A kind of band lens type LED encapsulation structure

Technical field

A kind of photoelectric field is the utility model is related to, is specifically related to a kind of band lens type LED encapsulation structure.

Background technology

CSP (Chip Scale Package) is encapsulated, and is the meaning of wafer-level package, is based particularly on flip-chip exploitation CSP with its excellent light extraction efficiency, good radiator structure, exquisite appearance and size the advantages that, have started to be applied to backlight, The high-end purposes such as flash lamp, commercial illumination.

Existing CSP encapsulation mainly includes following several structures, structure A：Fluorescent coating cladding flip LED chips form 5 Face light extraction CSP structures；Structure B：Changed by structure A, do vertical wall with white reflection silica gel, form one side light-emitting junction Structure；Structure C：The structure is attached on the embedding LED package with white reflection cup using inviscid fluorescence film, Ye Shiyi Kind one side light emitting structures；Structure D：The ultra-thin fluorescence coating of 50-70 microns is formed on chip with the method for spraying fluorescent glue, then With transparent silica gel, embedding is protected in reflector.

Several CSP encapsulating structure central characteristics are to be thickness about 50-150um to flip-chip with potting resin above Five bread cover, only bare electrode one side, form one side or the encapsulating structure of five face light extractions, due to the encapsulated layer that adheres on chip Thickness is all very thin, and the adhesive force between silica gel and chip is poor, and silica gel is also softer, encapsulates and ties in these CSP When structure is by bigger external force, encapsulated layer can there is a situation where to come off, and cause these encapsulating structures to fail.Additionally, due to these The pad of CSP encapsulating structures is exactly the electrode of flip-chip, therefore pad all very littles, is existed when being welded direct on substrate pair The problem of position is inaccurate, rosin joint.

Utility model content

The utility model aims to provide a kind of band lens type LED encapsulation structure, exists easily to solve existing CSP encapsulating structures The problem of damage and welding difficulty.

Concrete scheme is as follows：

A kind of band lens type LED encapsulation structure, including lens and flip LED chips, the middle part of the incidence surface of the lens Cavity with an indent, the first metal of the periphery and mutually insulated positioned at cavity is additionally provided with the incidence surface of the lens Layer and second metal layer, the flip LED chips be arranged on cavity in, and the flip LED chips two electrodes it is exposed Outside cavity, two electrodes of flip LED chips are electrically connected with the first metal layer and second metal layer respectively.

Preferably, the band lens type LED encapsulation structure also has the 3rd metal level and the 4th metal level, the 3rd gold medal Category layer is covered on the first metal layer and the electrode being electrically connected with the first metal layer, and the 4th metal level is covered in second On metal level and the electrode being electrically connected with second metal layer, between the 3rd metal level and the 4th metal level mutually absolutely Edge.

Preferably, the 3rd metal level and the 4th metal level are formed by the mode of magnetron sputtering, plating or evaporation.

Preferably, the thickness of the 3rd metal level and the 4th metal level is 40-100 microns.

Preferably, also there is the crystal-bonding adhesive of printing opacity, the flip LED chips are fixed to by the crystal-bonding adhesive in the cavity On lens.

Preferably, it is filled with heat-conducting glue in the gap between the inwall of the flip LED chips and cavity.

Preferably, the heat-conducting glue is made up of silica gel and nano-titanium oxide and/or nano aluminium oxide.

Preferably, also it is mixed with fluorescent material in the crystal-bonding adhesive.

Preferably, it is additionally provided with phosphor powder layer on the exiting surface of the lens.

Preferably, there is an interlayer between the incidence surface and exiting surface of the lens, fluorescent material is filled with the interlayer Layer.

A kind of band lens type LED encapsulation structure provided by the utility model and method for packing have compared with prior art Beneficial effect：

1st, there is an indent on a kind of incidence surface of lens with lens type LED encapsulation structure provided by the utility model Cavity, flip LED chips are fixed in cavity so that lens turn into the hard protective layer of flip LED chips, it is not easy to damage core Piece, and also there is metal level on lens, therefore increase the pad size of flip LED chips so that the encapsulating structure can It is welded to simpler on substrate.

2nd, it is provided by the utility model it is a kind of with lens type LED encapsulation structure between lens and flip LED chips between Heat-conducting glue is filled with gap, therefore the radiating effect of flip LED chips can be improved.

3rd, a kind of phosphor powder layer with lens type LED encapsulation structure provided by the utility model is located on the exiting surface of lens Or in the interlayer between exiting surface and incidence surface so that phosphor powder layer is isolated with flip LED chips, it is possible to reduce heat Concentration, and the phosphor powder layer in the interlayer can also avoid the damage to phosphor powder layer in operation.

4th, a kind of band lens type LED encapsulation structure provided by the utility model, by adjusting the shape of lens, can be adjusted The lighting angle and light spot shape of encapsulating structure.

Brief description of the drawings

Fig. 1 shows the schematic diagram with lens type LED encapsulation structure in embodiment 1.

Fig. 2 shows the schematic diagram with lens type LED encapsulation structure in embodiment 2 and embodiment 3.

Fig. 3 shows the schematic diagram with lens type LED encapsulation structure in embodiment 4.

Fig. 4 shows another schematic diagram with lens type LED encapsulation structure in embodiment 4.

Embodiment

To further illustrate each embodiment, the utility model is provided with accompanying drawing.These accompanying drawings are in the utility model discloses A part for appearance, it can coordinate the associated description of specification to explain the running of embodiment original mainly to illustrate embodiment Reason.Cooperation refers to these contents, and those of ordinary skill in the art will be understood that other possible embodiments and this practicality are new The advantages of type.Component in figure is not necessarily to scale, and similar element numbers are conventionally used to indicate similar component.

The utility model is further illustrated in conjunction with the drawings and specific embodiments.

Embodiment 1

As shown in figure 1, the utility model provides a kind of band lens type LED encapsulation structure, including lens 1 and flip LED Chip 2, the incidence surface 1a of lens middle part have the cavity 10 of an indent, are additionally provided with and are located on the incidence surface of the lens The periphery of cavity and the first metal layer 12 of mutually insulated and second metal layer 14, the flip LED chips 2 are arranged on cavity In 10, and two electrodes 20a and 20b of the flip LED chips 2 are exposed outside cavity, two electrodes of flip LED chips (20a, 20b) is electrically connected with the first metal layer 12 and second metal layer 14 respectively.The wherein depth of the indent of cavity 10 and upside-down mounting The thickness of LED chip 2 is identical or thickness slightly larger than flip LED chips 2, therefore two electrodes that flip-chip exposes (20a, 20b) and the first metal layer 12 and second metal layer 14 are substantially in same level, thus two electrodes with each The first metal layer or second metal layer of electrical connection turn into two pads of the encapsulating structure jointly, add the area of pad, Enable the encapsulating structure is simpler to be welded direct on substrate.

With reference to figure 1, as a kind of preferred scheme of the encapsulating structure, the band lens type LED encapsulation structure also has the Three metal levels 16 and the 4th metal level 18, the 3rd metal level 16 be covered in the first metal layer 12 and with the first metal layer phase On the electrode 20a of electrical connection, the 4th metal level 18 is covered in second metal layer 14 and is electrically connected with second metal layer Electrode 20b on, mutually insulated, i.e. the 3rd metal level 16 and the 4th gold medal between the 3rd metal level 16 and the 4th metal level 18 Belong to two pads that layer 18 turns into the encapsulating structure.It should be clear that the 3rd metal level and the first metal layer and with first The electrode that metal level is electrically connected all is electrically connected, and the 4th metal level is electrically connected with second metal layer and with second metal layer Electrode be all electrically connected.

As a preferable scheme of the 3rd metal level 16 and the 4th metal level 18, the 3rd metal level and the 4th gold medal Category layer is formed by the mode of magnetron sputtering, plating or evaporation.The material of 3rd metal level and the 4th metal level is solderable metal, Such as copper, silver, gold, nickel or containing copper, silver, gold, nickel these metals alloy.

It is preferred that the thickness of the 3rd metal level and the 4th metal level is 40-100um.

Embodiment 2

A kind of band lens type LED encapsulation structure with lens type LED encapsulation structure and embodiment 1 that the present embodiment provides Roughly the same, its discrepancy is, with reference to figure 2, also has the crystal-bonding adhesive 30 of printing opacity, the flip LED core in the cavity 10 Piece 2 is fixed on lens by the crystal-bonding adhesive.Can be first by the cavity of 30 points of fixing glue to lens, then falling in operation Dress LED chip is placed into cavity, is applied pressure and is discharged the air between flip-chip and fixing glue, heats and consolidate fixing glue Change, you can flip-chip is fixed on lens.The not only side of operation by the way of transparent crystal-bonding adhesive fixes flip LED chips Just, and the air between flip LED chips and lens can be discharged, increases its radiating effect.As a preferable scheme, Fluorescent material can also be mixed with crystal-bonding adhesive.

Embodiment 3

A kind of band lens type LED encapsulation structure with lens type LED encapsulation structure and embodiment 1 that the present embodiment provides Roughly the same, its discrepancy is, with reference to figure 2, is filled in the gap between the inwall of the flip LED chips 2 and cavity 10 There is heat-conducting glue 40, heat-conducting glue 40 can discharge the air between flip LED chips and the inwall of cavity, increase its radiating effect. Wherein described heat-conducting glue is preferably made up of silica gel and nano-titanium oxide and/or nano aluminium oxide.

Embodiment 4

A kind of band lens type LED encapsulation structure with lens type LED encapsulation structure and embodiment 1 that the present embodiment provides Roughly the same, its discrepancy is, with reference to figure 3, phosphor powder layer 50 is additionally provided with the exiting surface 1b of the lens.Wherein fluorescent material Layer configures according to required colour temperature and display index, and phosphor powder layer can use coating or molding (shaping) side Formula is fixed on the exiting surface of lens.

With reference to figure 4, as another embodiment of phosphor powder layer, have between the incidence surface 1a and exiting surface 1b of the lens There is an interlayer 6, phosphor powder layer (not shown) is filled with the interlayer 6.With reference to figure 4, it is provided with interlayer 6 and interlayer Two through holes 6a and 6b being connected, it is mixed with the colloid of fluorescent material and is injected into interlayer in through hole a 6a or 6b therefrom In, make to be mixed with the full whole interlayer of colloid filling of fluorescent material, then colloid is heating and curing may be implemented in interlayer 6 fill it is glimmering Light bisque.

The implementation of above-mentioned two phosphor powder layer all causes phosphor powder layer to isolate with flip LED chips, it is possible to reduce heat The concentration of amount, and the phosphor powder layer in interlayer can also avoid the damage to phosphor powder layer in operation.

Although specifically showing and describing the utility model with reference to preferred embodiment, those skilled in the art should This is understood, is not departing from the spirit and scope of the present utility model that appended claims are limited, in form and details On the utility model can be made a variety of changes, be the scope of protection of the utility model.

Claims

A kind of 1. band lens type LED encapsulation structure, it is characterised in that：Including lens and flip LED chips, the lens enter light The middle part in face has the cavity of an indent, and periphery and mutually insulated positioned at cavity are additionally provided with the incidence surface of the lens The first metal layer and second metal layer, the flip LED chips are arranged in cavity, and two electricity of the flip LED chips Extremely exposed outside cavity, two electrodes of flip LED chips are electrically connected with the first metal layer and second metal layer respectively.
A kind of 2. band lens type LED encapsulation structure according to claim 1, it is characterised in that：The band lens type LED envelopes Assembling structure also has the 3rd metal level and the 4th metal level, the 3rd metal level be covered in the first metal layer and with the first gold medal On the electrode that is electrically connected of category layer, the 4th metal level is covered in second metal layer and is electrically connected with second metal layer On electrode, mutually insulated between the 3rd metal level and the 4th metal level.
A kind of 3. band lens type LED encapsulation structure according to claim 2, it is characterised in that：3rd metal level and 4th metal level is formed by the mode of magnetron sputtering, plating or evaporation.
A kind of 4. band lens type LED encapsulation structure according to claim 2, it is characterised in that：3rd metal level and The thickness of 4th metal level is 40-100 microns.
A kind of 5. band lens type LED encapsulation structure according to claim 1, it is characterised in that：Also have in the cavity The crystal-bonding adhesive of printing opacity, the flip LED chips are fixed on lens by the crystal-bonding adhesive.
A kind of 6. band lens type LED encapsulation structure according to claim 1, it is characterised in that：The flip LED chips with Heat-conducting glue is filled with gap between the inwall of cavity.
A kind of 7. band lens type LED encapsulation structure according to claim 6, it is characterised in that：The heat-conducting glue is by silica gel And nano-titanium oxide and/or nano aluminium oxide are made.
A kind of 8. band lens type LED encapsulation structure according to claim 5, it is characterised in that：It is also mixed in the crystal-bonding adhesive Conjunction has fluorescent material.
A kind of 9. band lens type LED encapsulation structure according to claim 1, it is characterised in that：The exiting surface of the lens On be additionally provided with phosphor powder layer.
A kind of 10. band lens type LED encapsulation structure according to claim 1, it is characterised in that：The incidence surface of the lens There is an interlayer between exiting surface, phosphor powder layer is filled with the interlayer.