CN207458983U - LED ultraviolet sources - Google Patents
LED ultraviolet sources Download PDFInfo
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- CN207458983U CN207458983U CN201721357196.5U CN201721357196U CN207458983U CN 207458983 U CN207458983 U CN 207458983U CN 201721357196 U CN201721357196 U CN 201721357196U CN 207458983 U CN207458983 U CN 207458983U
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Abstract
The utility model is related to a kind of LED ultraviolet sources, including substrate, die bond bonding material layer, sapphire chip and quartz lens, back side anode circuit and back side cathode circuit are done in the substrate back interval, substrate front side corresponds to back side anode circuit and back side cathode place on line does spaced front anode circuit and front cathode circuit respectively, and anode through hole, cathode through hole and multiple lateral through aperture are respectively equipped on the substrate.The utility model, which is overcome when existing LED ultraviolet sources use for a long time, to have certain destructiveness to the organic matter as binding agent and transparent colloid, reduce the reliability of LED ultraviolet sources, so that LED ultraviolet sources reduce the shortcomings that service life, have the advantages that work long hours, light source is reliable, service life is long.
Description
Technical field
The utility model is related to a kind of LED ultraviolet sources, apply in LED light source manufacturing field.
Background technology
LED UV source light is widely used, be chiefly used in sterilizing, UV curings, UV printings, UV exposures, nail lamp, it is anti-fake,
The fields such as Mosquito killer lamp.
Existing LED ultraviolet sources are mostly just to use organic matter and transparent colloid cemented lens, however enter chip in LED
Grade encapsulation epoch, the thermal energy that luminous energy is converted out are also a test to LED ultraviolet sources, will be to making when long-time uses
There is certain destructiveness for the organic matter and transparent colloid of binding agent, the reliability of LED ultraviolet sources is reduced, so that LED
Ultraviolet source reduces the service life.Therefore provide it is a kind of can work long hours, light source is reliable, service life length LED ultraviolet sources oneself
As when business urgently.
Utility model content
It will be to the organic matter and transparent colloid as binding agent during in order to which existing LED ultraviolet sources being overcome to use for a long time
There are certain destructiveness, the reliability of LED ultraviolet sources is reduced, so that the shortcomings that LED ultraviolet sources reduce the service life, this reality
With a kind of LED ultraviolet sources of new offer, have the advantages that work long hours, light source is reliable, service life is long.
The technical solution of the utility model is as follows：
A kind of LED ultraviolet sources, including substrate, the quartz lens being located above substrate front side and arranged on quartzy saturating
The die bond bonding material layer of mirror inner cavity and sapphire chip；
The substrate back be equipped with spaced back side anode circuit and back side cathode circuit, substrate front side with the back side
Anode circuit and the corresponding position of back side cathode circuit are respectively equipped with positioned at quartz lens inner cavity and spaced front just
Polar curve road and front cathode circuit, further respectively have anode through hole, cathode through hole and multiple lateral through aperture on the substrate, it is described just
Pole through hole penetrates through front anode circuit, substrate and back side anode circuit successively, and cathode through hole penetrates through front cathode circuit, base successively
Plate and back side cathode circuit, each lateral through aperture is connected to anode through hole by the different position of substrate side wall wall surface respectively or cathode leads to
Hole, in the lateral through aperture, anode through hole and cathode through hole filling completely make front anode circuit and back side anode line conduction,
The metal material of front cathode circuit and back side cathode line conduction；
The die bond bonding material layer spray printing is in the upper surface of the front anode circuit of substrate, and the sapphire chip is just
Face and the back side are respectively equipped with cathode chip circuit and anode chip circuit, which is arranged on above die bond bonding material layer
And pass through the bonding that the die bond bonding material layer realizes the anode chip circuit of sapphire chip and the front anode circuit of substrate
And conducting, the cathode chip circuit of sapphire chip pass through conductor wire and the front cathode connection of substrate；On the substrate
Equipped with the annular convex block to raise up that its periphery for being close to quartz lens is set, the quartz lens is by being cast in quartz
Liquid-metal layer between rims of the lens and annular convex block realizes the bonding with substrate.
Substrate design into 3D spills, is not take up redundant space, makes quartz lens reasonable by the LED ultraviolet sources of the application
Secondary souce is excited in space.And quartz lens is packed into after substrate and is sealed bonding with liquid metal, realizes truly
Inorganic encapsulated, melting point metal is high, and LED ultraviolet sources, which work long hours, does not have it any destruction, so as to effectively be promoted
The reliability and service life that LED ultraviolet sources work long hours.
Die bond bonding material layer is die bond solder paste layer or die bond elargol layer.
Preferred die bond bonding material layer is firmly bonded and conducts electricity very well.
It is additionally provided between the back side anode circuit and back side cathode circuit with being both arranged at intervals and positioned at blue precious
Stone beneath chips are used for the pad of sapphire chip cooling.
The setting of pad causes sapphire chip cooling more preferably, has ensured the long-time stable work of LED ultraviolet sources.
The ring-type convex block is quadruple board platform scalariform, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
The defects of being encapsulated for existing LED ultraviolet sources, makes quadruple board platform scalariform by substrate, further increases quartz lens
With the combined with firmness of substrate, reliability and the service life of LED ultraviolet sources are further improved.
The edge of quartz lens is step-like, and the stepped edge of quartz lens is stuck in the platform of the relatively low level-one of annular convex block
On rank.
The design causes the card of quartz lens to set the reliability for more securely, improving ultraviolet source.
The ring-type convex block forms out cricoid annular convex block by multiple spaced arc bumps.
The ring-type convex block is the annular convex block of a closed hoop.
The substrate is aluminium nitride substrate.
Aluminium nitride substrate is got well than the flatness of general aluminum substrate or copper base, more efficient, the light of the ultraviolet light of generation
Source better quality.
The aluminium nitride substrate is aluminium nitride substrate of the front by turmeric processing, and the front anode circuit and front are born
Polar curve routing directly etches in aluminium nitride substrate front, and one is equipped between front anode circuit and front cathode circuit absolutely
Edge isolating bar.
The light that more efficiently sapphire chip can be sent after aluminium nitride substrate turmeric is reflected away.
The metal material is silver.
The die bond solder paste layer includes the SnAgCu that thermal conductivity factor is 65-68W/mK and powder footpath is 5-15UM.
The die bond effect of preferred die bond solder paste layer is more preferable.
The quartzy purity of the quartz lens is 95-97%.
The transmitance higher of preferred quartz lens.
The liquid-metal layer is silver or indium.
Preferred liquid-metal layer fusing point is high, stability is good.
Compared with prior art, the present utility model application has the following advantages：
1) the LED ultraviolet sources of the application pass through substrate design is into 3D spills and that liquid metal is coordinated to be sealed is viscous
It connects, realizes inorganic encapsulated truly, melting point metal is high, and LED ultraviolet sources, which work long hours, does not have it any destruction
Effect, so as to effectively improve reliability and the service life that LED ultraviolet sources work long hours；
2) substrate is made into quadruple board platform scalariform, further increases the combined with firmness of quartz lens and substrate, further
Improve reliability and the service life of LED ultraviolet sources；
3) preferred substrate, die bond solder paste layer, quartz lens, liquid-metal layer cause LED ultraviolet sources more stablize and
Source mass is more preferable.
Description of the drawings
Fig. 1 is the front elevation one of LED ultraviolet sources substrate described in the utility model；
Fig. 2 is the front elevation two of LED ultraviolet sources substrate described in the utility model；
Fig. 3 is the back view of LED ultraviolet sources substrate described in the utility model；
Fig. 4 is LED ultraviolet sources described in the utility model) embodiment 1 substrate (not doing circuit) top view；
Fig. 5 is LED ultraviolet sources embodiment 2 described in the utility model, the top view of 3 substrates (not doing circuit)；
Fig. 6 is the top view of 4 substrate (not doing circuit) of LED ultraviolet sources embodiment described in the utility model；
Fig. 7 is LED ultraviolet sources embodiment 5 described in the utility model, the top view of 6 substrates (not doing circuit)；
Fig. 8 is the schematic cross-section of LED ultraviolet sources embodiment 1,4 described in the utility model；
Fig. 9 is the schematic cross-section of LED ultraviolet sources embodiment 2,5 described in the utility model；
Figure 10 is the schematic cross-section of LED ultraviolet sources embodiment 3,6 described in the utility model.
Label declaration：
Substrate 1, die bond bonding material layer 2, sapphire chip 3, quartz lens 4, liquid-metal layer 5, annular convex block 1-1,
Back side anode circuit 1-2, back side cathode circuit 1-3, front anode circuit 1-4, front cathode circuit 1-5, anode through hole 1-6,
Cathode through hole 1-7, lateral through aperture 1-8, pad 1-9, insulative spacers 1-10, cathode chip circuit 3-1, anode chip circuit 3-
2。
Specific embodiment
The technical solution of the utility model is described in detail with reference to Figure of description 1-10.
Embodiment 1
It is described including substrate 1, die bond bonding material layer 2, sapphire chip 3 and quartz lens 4 as shown in Fig. 1,3-4,8
1 back side of substrate is equipped at intervals with back side anode circuit 1-2 and back side cathode circuit 1-3, the corresponding back side anode circuit 1- in 1 front of substrate
2 and back side cathode circuit 1-3 positions be respectively equipped with spaced front anode circuit 1-4 and front cathode circuit 1-5, the base
Anode through hole 1-6, cathode through hole 1-7 and multiple lateral through aperture 1-8 are respectively equipped on plate 1, the anode through hole 1-6 is penetrated through successively
Front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode through hole 1-7 penetrate through front cathode circuit 1-5, base successively
Plate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 be distributed on 1 side wall of substrate and be respectively communicated with anode through hole 1-6 or
Cathode through hole 1-7, by lateral through aperture 1-8 fill out silver can turn on front anode circuit 1-4 and back side anode circuit 1-2 and
Front cathode circuit 1-5 and back side cathode circuit 1-3；2 spray printing of die bond bonding material layer is 1 front anode circuit 1-4's of substrate
Upper surface, the front and back of the sapphire chip 3 are respectively equipped with cathode chip circuit 3-1 and anode chip circuit 3-2, should
Sapphire chip 3, which is arranged on 2 top of die bond bonding material layer and passes through the die bond bonding material layer 2, realizes 3 anode of sapphire chip
The bonding and conducting, 3 cathode chip circuit 3-1 of sapphire chip of chip circuit 3-2 and 1 front anode circuit 1-4 of substrate passes through
Conductor wire is connected with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is located at 3 top of sapphire chip.It is set on the substrate 1
There is the annular convex block 1-1 to raise up that its periphery for being close to quartz lens 4 is set, the quartz lens 4 is by being cast in
Liquid-metal layer 5 between 4 edge of quartz lens and annular convex block 1-1 realizes the bonding with substrate 1.
Die bond bonding material layer 2 is die bond solder paste layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 forms out cricoid annular convex block by multiple spaced arc bumps.
Substrate 1 is aluminium nitride substrate.
Embodiment 2
As shown in Fig. 2,3,5,9, a kind of LED ultraviolet sources described in the utility model bond material including substrate 1, die bond
The bed of material 2, sapphire chip 3 and quartz lens 4,1 back side of substrate are equipped at intervals with back side anode circuit 1-2 and back side negative line
Road 1-3, the corresponding back side anode circuit 1-2 in 1 front of substrate and back side cathode circuit 1-3 positions are respectively equipped with spaced front
Anode circuit 1-4 and front cathode circuit 1-5 is respectively equipped with anode through hole 1-6, cathode through hole 1-7 and multiple sides on the substrate 1
Wall through hole 1-8, the anode through hole 1-6 penetrate through front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode successively
Through hole 1-7 penetrates through front cathode circuit 1-5, substrate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 and is distributed in base successively
On 1 side wall of plate and anode through hole 1-6 or cathode through hole 1-7 is respectively communicated with, front can be turned on by filling out silver to lateral through aperture 1-8
Anode circuit 1-4 and back side anode circuit 1-2 and front cathode circuit 1-5 and back side cathode circuit 1-3；Die bond binding material
For 2 spray printing of layer in the upper surface of 1 front anode circuit 1-4 of substrate, the front and back of the sapphire chip 3 is respectively equipped with cathode
Chip circuit 3-1 and anode chip circuit 3-2, the sapphire chip 3 are arranged on 2 top of die bond bonding material layer and pass through the die bond
Bonding material layer 2 realizes bonding and the conducting of sapphire chip 3 anode chip circuit 3-2 and 1 front anode circuit 1-4 of substrate,
3 cathode chip circuit 3-1 of sapphire chip is connected by conductor wire with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is provide with
Above sapphire chip 3.The substrate 1, which is equipped with, is close to the ring-type to raise up that its periphery of quartz lens 4 is set
Convex block 1-1, the quartz lens 4 are real by the liquid-metal layer 5 being cast between 4 edge of quartz lens and annular convex block 1-1
Now with the bonding of substrate 1.
Die bond bonding material layer 2 is die bond elargol layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 is quadruple board platform scalariform, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
The ring-type convex block 1-1 forms out cricoid annular convex block by multiple spaced arc bumps.
The aluminium nitride substrate is aluminium nitride substrate of the front by turmeric processing, the front anode circuit 1-4 and just
Face cathode circuit 1-5 in aluminium nitride substrate front by directly etching, and front anode circuit 1-4 and front cathode circuit 1-
An insulative spacers 1-10 is equipped between 5.
The die bond solder paste layer 2 includes the SnAgCu that thermal conductivity factor is 65-68W/mK and powder footpath is 5-15UM.
The quartzy purity of the quartz lens 4 is 95-97%.
The liquid-metal layer 5 is silver.
Embodiment 3
As shown in Fig. 2,3,5,10, a kind of LED ultraviolet sources described in the utility model bond material including substrate 1, die bond
The bed of material 2, sapphire chip 3 and quartz lens 4,1 back side of substrate are equipped at intervals with back side anode circuit 1-2 and back side negative line
Road 1-3, the corresponding back side anode circuit 1-2 in 1 front of substrate and back side cathode circuit 1-3 positions are respectively equipped with spaced front
Anode circuit 1-4 and front cathode circuit 1-5 is respectively equipped with anode through hole 1-6, cathode through hole 1-7 and multiple sides on the substrate 1
Wall through hole 1-8, the anode through hole 1-6 penetrate through front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode successively
Through hole 1-7 penetrates through front cathode circuit 1-5, substrate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 and is distributed in base successively
On 1 side wall of plate and anode through hole 1-6 or cathode through hole 1-7 is respectively communicated with, front can be turned on by filling out silver to lateral through aperture 1-8
Anode circuit 1-4 and back side anode circuit 1-2 and front cathode circuit 1-5 and back side cathode circuit 1-3；Die bond binding material
For 2 spray printing of layer in the upper surface of 1 front anode circuit 1-4 of substrate, the front and back of the sapphire chip 3 is respectively equipped with cathode
Chip circuit 3-1 and anode chip circuit 3-2, the sapphire chip 3 are arranged on 2 top of die bond bonding material layer and pass through the die bond
Bonding material layer 2 realizes bonding and the conducting of sapphire chip 3 anode chip circuit 3-2 and 1 front anode circuit 1-4 of substrate,
3 cathode chip circuit 3-1 of sapphire chip is connected by conductor wire with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is provide with
Above sapphire chip 3.The substrate 1, which is equipped with, is close to the ring-type to raise up that its periphery of quartz lens 4 is set
Convex block 1-1, the quartz lens 4 are real by the liquid-metal layer 5 being cast between 4 edge of quartz lens and annular convex block 1-1
Now with the bonding of substrate 1.
Die bond bonding material layer 2 is die bond solder paste layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 is quadruple board platform scalariform, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
The edge of quartz lens 4 is step-like, and the stepped edge of quartz lens 4 is stuck in annular convex block 1-1 relatively low one
On the step of grade.
The ring-type convex block 1-1 forms out cricoid annular convex block by multiple spaced arc bumps.
The aluminium nitride substrate is aluminium nitride substrate of the front by turmeric processing, the front anode circuit 1-4 and just
Face cathode circuit 1-5 in aluminium nitride substrate front by directly etching, and front anode circuit 1-4 and front cathode circuit 1-
An insulative spacers 1-10 is equipped between 5.
The die bond solder paste layer 2 includes the SnAgCu that thermal conductivity factor is 65-68W/mK and powder footpath is 5-15UM.
The quartzy purity of the quartz lens 4 is 95-97%.
The liquid-metal layer 5 is indium.
Embodiment 4
As shown in Fig. 1,3,6,8, a kind of LED ultraviolet sources described in the utility model bond material including substrate 1, die bond
The bed of material 2, sapphire chip 3 and quartz lens 4,1 back side of substrate are equipped at intervals with back side anode circuit 1-2 and back side negative line
Road 1-3, the corresponding back side anode circuit 1-2 in 1 front of substrate and back side cathode circuit 1-3 positions are respectively equipped with spaced front
Anode circuit 1-4 and front cathode circuit 1-5 is respectively equipped with anode through hole 1-6, cathode through hole 1-7 and multiple sides on the substrate 1
Wall through hole 1-8, the anode through hole 1-6 penetrate through front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode successively
Through hole 1-7 penetrates through front cathode circuit 1-5, substrate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 and is distributed in base successively
On 1 side wall of plate and anode through hole 1-6 or cathode through hole 1-7 is respectively communicated with, front can be turned on by filling out silver to lateral through aperture 1-8
Anode circuit 1-4 and back side anode circuit 1-2 and front cathode circuit 1-5 and back side cathode circuit 1-3；Die bond binding material
For 2 spray printing of layer in the upper surface of 1 front anode circuit 1-4 of substrate, the front and back of the sapphire chip 3 is respectively equipped with cathode
Chip circuit 3-1 and anode chip circuit 3-2, the sapphire chip 3 are arranged on 2 top of die bond bonding material layer and pass through the die bond
Bonding material layer 2 realizes bonding and the conducting of sapphire chip 3 anode chip circuit 3-2 and 1 front anode circuit 1-4 of substrate,
3 cathode chip circuit 3-1 of sapphire chip is connected by conductor wire with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is provide with
Above sapphire chip 3.The substrate 1, which is equipped with, is close to the ring-type to raise up that its periphery of quartz lens 4 is set
Convex block 1-1, the quartz lens 4 are real by the liquid-metal layer 5 being cast between 4 edge of quartz lens and annular convex block 1-1
Now with the bonding of substrate 1.
Die bond bonding material layer 2 is die bond solder paste layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 is the annular convex block of a closed hoop.
Substrate 1 is aluminium nitride substrate.
Embodiment 5
It is described including substrate 1, die bond bonding material layer 2, sapphire chip 3 and quartz lens 4 as shown in Fig. 2,3,7,9
1 back side of substrate is equipped at intervals with back side anode circuit 1-2 and back side cathode circuit 1-3, the corresponding back side anode circuit 1- in 1 front of substrate
2 and back side cathode circuit 1-3 positions be respectively equipped with spaced front anode circuit 1-4 and front cathode circuit 1-5, the base
Anode through hole 1-6, cathode through hole 1-7 and multiple lateral through aperture 1-8 are respectively equipped on plate 1, the anode through hole 1-6 is penetrated through successively
Front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode through hole 1-7 penetrate through front cathode circuit 1-5, base successively
Plate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 be distributed on 1 side wall of substrate and be respectively communicated with anode through hole 1-6 or
Cathode through hole 1-7, by lateral through aperture 1-8 fill out silver can turn on front anode circuit 1-4 and back side anode circuit 1-2 and
Front cathode circuit 1-5 and back side cathode circuit 1-3；2 spray printing of die bond bonding material layer is 1 front anode circuit 1-4's of substrate
Upper surface, the front and back of the sapphire chip 3 are respectively equipped with cathode chip circuit 3-1 and anode chip circuit 3-2, should
Sapphire chip 3, which is arranged on 2 top of die bond bonding material layer and passes through the die bond bonding material layer 2, realizes 3 anode of sapphire chip
The bonding and conducting, 3 cathode chip circuit 3-1 of sapphire chip of chip circuit 3-2 and 1 front anode circuit 1-4 of substrate passes through
Conductor wire is connected with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is located at 3 top of sapphire chip, is set on the substrate 1
There is the annular convex block 1-1 to raise up that its periphery for being close to quartz lens 4 is set, the quartz lens 4 is by being cast in
Liquid-metal layer 5 between 4 edge of quartz lens and annular convex block 1-1 realizes the bonding with substrate 1.
Die bond bonding material layer 2 is die bond elargol layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 is quadruple board platform scalariform, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
The ring-type convex block 1-1 is the annular convex block of a closed hoop.
The aluminium nitride substrate is aluminium nitride substrate of the front by turmeric processing, the front anode circuit 1-4 and just
Face cathode circuit 1-5 in aluminium nitride substrate front by directly etching, and front anode circuit 1-4 and front cathode circuit 1-
An insulative spacers 1-10 is equipped between 5.
The die bond solder paste layer 2 includes the SnAgCu that thermal conductivity factor is 65-68W/mK and powder footpath is 5-15UM.
The quartzy purity of the quartz lens 4 is 95-97%.
The liquid-metal layer 5 is silver.
Embodiment 6
As shown in Fig. 2,3,7,10, a kind of LED ultraviolet sources described in the utility model bond material including substrate 1, die bond
The bed of material 2, sapphire chip 3 and quartz lens 4,1 back side of substrate are equipped at intervals with back side anode circuit 1-2 and back side negative line
Road 1-3, the corresponding back side anode circuit 1-2 in 1 front of substrate and back side cathode circuit 1-3 positions are respectively equipped with spaced front
Anode circuit 1-4 and front cathode circuit 1-5 is respectively equipped with anode through hole 1-6, cathode through hole 1-7 and multiple sides on the substrate 1
Wall through hole 1-8, the anode through hole 1-6 penetrate through front anode circuit 1-4, substrate 1 and back side anode circuit 1-2, cathode successively
Through hole 1-7 penetrates through front cathode circuit 1-5, substrate 1 and back side cathode circuit 1-3, multiple lateral through aperture 1-8 and is distributed in base successively
On 1 side wall of plate and anode through hole 1-6 or cathode through hole 1-7 is respectively communicated with, front can be turned on by filling out silver to lateral through aperture 1-8
Anode circuit 1-4 and back side anode circuit 1-2 and front cathode circuit 1-5 and back side cathode circuit 1-3；Die bond binding material
For 2 spray printing of layer in the upper surface of 1 front anode circuit 1-4 of substrate, the front and back of the sapphire chip 3 is respectively equipped with cathode
Chip circuit 3-1 and anode chip circuit 3-2, the sapphire chip 3 are arranged on 2 top of die bond bonding material layer and pass through the die bond
Bonding material layer 2 realizes bonding and the conducting of sapphire chip 3 anode chip circuit 3-2 and 1 front anode circuit 1-4 of substrate,
3 cathode chip circuit 3-1 of sapphire chip is connected by conductor wire with 1 front cathode circuit 1-5 of substrate；Quartz lens 4 is provide with
Above sapphire chip 3, the substrate 1, which is equipped with, is close to the ring-type to raise up that its periphery of quartz lens 4 is set
Convex block 1-1, the quartz lens 4 are real by the liquid-metal layer 5 being cast between 4 edge of quartz lens and annular convex block 1-1
Now with the bonding of substrate 1.
Die bond bonding material layer 2 is die bond elargol layer.
It is additionally provided between the back side anode circuit 1-2 and back side cathode circuit 1-3 and both interval setting and position
The pad 1-9 for being used to radiate to sapphire chip 3 in 3 lower section of sapphire chip.
The ring-type convex block 1-1 is quadruple board platform scalariform, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
The edge of quartz lens 4 is step-like, and the stepped edge of quartz lens 4 is stuck in annular convex block 1-1 relatively low one
On the step of grade.
The ring-type convex block 1-1 is the annular convex block of a closed hoop.
The aluminium nitride substrate is aluminium nitride substrate of the front by turmeric processing, the front anode circuit 1-4 and just
Face cathode circuit 1-5 in aluminium nitride substrate front by directly etching, and front anode circuit 1-4 and front cathode circuit 1-
An insulative spacers 1-10 is equipped between 5.
The die bond solder paste layer 2 includes the SnAgCu that thermal conductivity factor is 65-68W/mK and powder footpath is 5-15UM.
The quartzy purity of the quartz lens 4 is 95-97%.
The liquid-metal layer 5 is indium.
The manufacturing process of the LED ultraviolet sources of various embodiments above is as follows：
1st, on substrate spray printing die bond solder paste and put on die bond solder paste layer sapphire chip carry out die bond；2nd, solid good crystalline substance
After be placed on reflow ovens and toasted；3rd, after baked, gold thread bonding is carried out to sapphire chip and substrate；4th, after bonding is good
Quartz lens is assembled, liquid metal is carried out and pours welding.
LED ultraviolet sources described in the utility model are not only limited only to above-described embodiment, every according to this practicality
Any improvement or replacement of new principle, should be covered by the scope of the present utility model within.
Claims (10)
1. a kind of LED ultraviolet sources including substrate (1), are located at the quartz lens (4) of substrate (1) upper front and are arranged on
The die bond bonding material layer (2) of quartz lens (4) inner cavity and sapphire chip (3)；It is characterized in that：
Substrate (1) back side is equipped with spaced back side anode circuit (1-2) and back side cathode circuit (1-3), substrate (1)
Front is respectively equipped in position corresponding with back side anode circuit (1-2) and back side cathode circuit (1-3) positioned at quartz lens (4)
Inner cavity and spaced front anode circuit (1-4) and front cathode circuit (1-5) are further respectively had on the substrate (1)
Anode through hole (1-6), cathode through hole (1-7) and multiple lateral through aperture (1-8), the anode through hole (1-6) penetrate through front successively
Anode circuit (1-4), substrate (1) and back side anode circuit (1-2), cathode through hole (1-7) penetrate through front cathode circuit (1- successively
5), substrate (1) and back side cathode circuit (1-3), each lateral through aperture (1-8) is respectively by the different position of substrate (1) side wall wall surface
It is connected to anode through hole (1-6) or cathode through hole (1-7), the lateral through aperture (1-8), anode through hole (1-6) and cathode through hole
Filling completely makes front anode circuit (1-4) and back side anode circuit (1-2) conducting, front cathode circuit (1-5) and the back of the body in (1-7)
The metal material of face cathode circuit (1-3) conducting；
Die bond bonding material layer (2) spray printing is in the upper surface of the front anode circuit (1-4) of substrate (1), the sapphire
The front and back of chip (3) is respectively equipped with cathode chip circuit (3-1) and anode chip circuit (3-2), the sapphire chip
(3) it is arranged on above die bond bonding material layer (2) and passes through the anode that the die bond bonding material layer (2) realizes sapphire chip (3)
Bonding and conducting of the chip circuit (3-2) with the front anode circuit (1-4) of substrate (1), the cathode chip of sapphire chip (3)
Circuit (3-1) is connected by conductor wire with front cathode circuit (1-5) of substrate (1)；The substrate (1), which is equipped with, is close to quartz
The annular convex block (1-1) to raise up that its periphery of lens (4) is set, the quartz lens (4) is by being cast in quartz
Liquid-metal layer (5) between lens (4) edge and annular convex block (1-1) realizes the bonding with substrate (1).
2. LED ultraviolet sources according to claim 1, it is characterised in that：Die bond bonding material layer (2) is die bond solder paste layer
Or die bond elargol layer.
3. LED ultraviolet sources according to claim 1, it is characterised in that：The back side anode circuit (1-2) and the back side are born
It is additionally provided between polar curve road (1-3) with being both arranged at intervals and being used for below sapphire chip (3) to sapphire
The pad (1-9) of chip (3) heat dissipation.
4. LED ultraviolet sources according to claim 1, it is characterised in that：The ring-type convex block (1-1) is quadruple board platform rank
Shape, and the internal diameter of upper strata step is more than the internal diameter of lower floor's step.
5. LED ultraviolet sources according to claim 4, it is characterised in that：The edge of quartz lens (4) is step-like, and
The stepped edge of quartz lens (4) is stuck on the step of annular convex block (1-1) relatively low level-one.
6. LED ultraviolet sources according to claim 1, it is characterised in that：The ring-type convex block (1-1) is set by multiple intervals
The arc bump composition put opens cricoid annular convex block.
7. LED ultraviolet sources according to claim 1, it is characterised in that：The ring-type convex block (1-1) is a closed hoop
Annular convex block.
8. LED ultraviolet sources according to claim 1, it is characterised in that：The substrate (1) is aluminium nitride substrate.
9. LED ultraviolet sources according to claim 8, it is characterised in that：The aluminium nitride substrate passes through turmeric for front
The aluminium nitride substrate of processing, the front anode circuit (1-4) and front cathode circuit (1-5) are by straight in aluminium nitride substrate front
It connects and etches, and an insulative spacers (1-10) are equipped between front anode circuit (1-4) and front cathode circuit (1-5).
10. LED ultraviolet sources according to claim 1, it is characterised in that：The metal material is silver.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020102948A1 (en) * | 2018-11-19 | 2020-05-28 | 泉州三安半导体科技有限公司 | Package element of ultraviolet light source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020102948A1 (en) * | 2018-11-19 | 2020-05-28 | 泉州三安半导体科技有限公司 | Package element of ultraviolet light source |
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