CN207852728U - The encapsulating structure of light-emitting diode chip for backlight unit - Google Patents
The encapsulating structure of light-emitting diode chip for backlight unit Download PDFInfo
- Publication number
- CN207852728U CN207852728U CN201721889098.6U CN201721889098U CN207852728U CN 207852728 U CN207852728 U CN 207852728U CN 201721889098 U CN201721889098 U CN 201721889098U CN 207852728 U CN207852728 U CN 207852728U
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- backlight unit
- diode chip
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model provides a kind of encapsulating structure of light-emitting diode chip for backlight unit, including：Transparent substrates have and draw pad；Metal lead wire is connected to and draws on pad, and metal lead wire upwardly extends；Light-emitting diode chip for backlight unit is installed in and draws on pad, to realize the electrical extraction of light-emitting diode chip for backlight unit；Fluorescent material layer, between light-emitting diode chip for backlight unit and transparent substrates；Encapsulating material is covered in light-emitting diode chip for backlight unit, and metal lead wire is exposed to encapsulating material；And ubm layer and metal coupling, it is formed on encapsulating material, to realize the electrical extraction of metal lead wire.The use fan-out package structure of the light-emitting diode chip for backlight unit innovation of the utility model, packaging density is high, can effectively reduce encapsulation volume.The utility model has good heat dissipation effect, has been greatly improved durable performance and the service life of chip.The pin configuration of the utility model is brief, can effectively shorten the length of circuit.
Description
Technical field
The utility model belongs to field of semiconductor package, a kind of encapsulating structure more particularly to light-emitting diode chip for backlight unit and
Packaging method.
Background technology
As the function of integrated circuit is increasingly stronger, performance and integrated level is higher and higher and novel integrated circuit goes out
Existing, encapsulation technology plays an increasingly important role in IC products, shared in the value of entire electronic system
Ratio it is increasing.Meanwhile as integrated circuit feature size reaches nanoscale, transistor to more high density, it is higher when
Clock frequency develops, and encapsulation also develops to more highdensity direction.
Since fan-out wafer grade encapsulation (fowlp) technology is due to having many advantages, such as miniaturization, low cost and high integration, with
And there is better performance and higher energy efficiency, fan-out wafer grade encapsulation (fowlp) technology have become the movement of high request/
The important packaging method of the electronic equipments such as wireless network is current one of encapsulation technology most with prospects.
Under the raised once again background of worry of Present Global energy shortage, energy saving to be that we will face in future important
Problem, in lighting area, the application of LED luminous products is just attract the sight of common people, and LED is as a kind of novel green light source
Product, necessarily the trend of future development, 21st century will be into using LED as the novel illumination light source epoch of representative.
LED is referred to as forth generation lighting source or green light source, has the characteristics that energy-saving and environmental protection, long lifespan, small,
It can be widely applied to the fields such as various instructions, display, decoration, backlight, general lighting and urban landscape.
The encapsulation of existing light-emitting diode chip for backlight unit generally includes formal dress encapsulation and flip-chip packaged.The encapsulation of existing formal dress and
Flip-chip packaged structure usually requires light-emitting diode chip for backlight unit being fixed in a substrate, and the substrate needs to realize light emitting diode
The electrical extraction of chip.However, this substrate thickness is larger, radiating efficiency is less desirable, and light-emitting diode chip for backlight unit is due to warm
Accumulation leads to the reduction in reliability and service life, also, the volume of encapsulating structure is more huge, and the circuit of package lead is longer, and
The problems such as easy ting produce open circuit.
Based on the above, light-emitting diode chip for backlight unit heat dissipation can be effectively improved by providing one kind, compared with small package volume, and effectively
The encapsulating structure and packaging method for shortening leads length are necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of light-emitting diode chip for backlight unit
Encapsulating structure and packaging method, for solve light-emitting diode chip for backlight unit in the prior art encapsulation volume is larger, heat dissipation effect
The problems such as difference and leads are long.
In order to achieve the above objects and other related objects, the utility model provides a kind of encapsulation knot of light-emitting diode chip for backlight unit
Structure, the encapsulating structure include：Transparent substrates have in the transparent substrates and draw pad；Metal lead wire is connected to described draw
Go out on pad, the metal lead wire upwardly extends；Light-emitting diode chip for backlight unit is installed on the extraction pad, described in realization
The electrical extraction of light-emitting diode chip for backlight unit；Fluorescent material layer, between the light-emitting diode chip for backlight unit and the transparent substrates；
Encapsulating material is covered in the light-emitting diode chip for backlight unit, and the metal lead wire is exposed to the encapsulating material；And under salient point
Metal layer and metal coupling are formed on the encapsulating material, to realize the electrical extraction of the metal lead wire.
Preferably, area of the area of the fluorescent material layer not less than the light extraction region of the light emitting diode.
Preferably, the light-emitting surface of the light-emitting diode chip for backlight unit and the fluorescent material close proximity.
Preferably, the material of the metal lead wire includes one kind in Au and Cu.
Preferably, the encapsulating material includes one kind in polyimides, silica gel and epoxy resin.
Preferably, the ubm layer and metal coupling include：Dielectric layer is formed in the encapsulating material surface,
The trepanning for appearing the metal lead wire is formed in the dielectric layer；Ubm layer is made in the trepanning, described convex
Point lower metal layer is electrically connected with the metal lead wire；Metal coupling is formed in the ubm layer surface.
Further, the material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorus silicon glass
Glass, the combination of one or more of fluorine-containing glass；The metal coupling includes that gold solder ball convex block, gold-tin alloy soldered ball are convex
Block, leypewter soldered ball convex block, the convex one kind in the block of sn-ag alloy soldered ball.
Preferably, the transparent substrates include one kind in substrate of glass, sapphire substrates and silicon base.
The utility model also provides a kind of packaging method of light-emitting diode chip for backlight unit, and the packaging method includes step：1)
One transparent substrates are provided, the extraction pad of light emitting diode is formed in the transparent substrates surface；2) in the transparent substrates
Form fluorescent material layer；3) light-emitting diode chip for backlight unit is provided, the light-emitting diode chip for backlight unit is installed in the transparent substrates
Extraction pad on, to realize the electrical extraction of the light-emitting diode chip for backlight unit, the extraction pad has exposed surface；4) in
The exposed surface for drawing pad forms metal lead wire, and the metal lead wire upwardly extends, and the top of the metal lead wire is not
Less than the top surface of the light-emitting diode chip for backlight unit；5) encapsulating material is used to encapsulate the light-emitting diode chip for backlight unit, the metal draws
Line is exposed to the encapsulating material；And 6) in forming ubm layer and metal coupling on the encapsulating material, to realize
The electrical extraction of the metal lead wire.
Preferably, the packaging method includes wafer-level packaging method, and the packaging method further includes the steps that cutting, with
Obtain the encapsulation unit of multiple mutually independent light emitting diodes.
Preferably, in step 2), the fluorescent material layer is formed in the transparent substrates using spin coating proceeding, it is described
Area of the area of fluorescent material layer not less than the light extraction region of the light emitting diode.
Preferably, in step 3), the fluorescent material is in semi-cured state, so that the light-emitting diode chip for backlight unit fills
After on the extraction pad, the light-emitting surface of the light-emitting diode chip for backlight unit and the fluorescent material close proximity.
Preferably, in step 3), the electrode of the light-emitting diode chip for backlight unit is installed in by metal solder joints described transparent
On the extraction pad of substrate.
Preferably, in step 4), the bonding wire craft includes hot pressing bonding wire craft, supersonic welding Wiring technology and hot pressing ultrasound
One kind in wave soldering Wiring technology.
Preferably, in step 4), the material of the metal lead wire includes one kind in Au and Cu.
Preferably, include compression forming, transfer modling using the method that encapsulating material encapsulates the light-emitting diode chip for backlight unit
One kind in molding, fluid-tight molding, vacuum lamination and spin coating, the encapsulating material include polyimides, silica gel and asphalt mixtures modified by epoxy resin
One kind in fat.
Preferably, step 6) includes：6-1) dielectric layer, and the shape in the dielectric layer are formed in the encapsulating material surface
At the trepanning for appearing the metal lead wire；6-2) make ubm layer in the trepanning, the ubm layer with
The metal lead wire is electrically connected；6-3) electroplating technology is used to form solder metal in the ubm layer surface；And
6-4) use high temperature reflow processes in forming metal coupling in the salient point lower layer.
Preferably, the material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass,
One or more of fluorine-containing glass combines；The metal coupling includes gold solder ball convex block, gold-tin alloy soldered ball convex block, tin
The convex one kind in the block of metal soldered ball convex block, sn-ag alloy soldered ball.
As described above, the encapsulating structure and packaging method of the light-emitting diode chip for backlight unit of the utility model, have beneficial below
Effect：
The use fan-out package structure of the light-emitting diode chip for backlight unit innovation of the utility model, packaging density is high, can be effective
Reduce encapsulation volume.
The utility model does not need traditional package substrates, such as aluminium substrate, has good heat dissipation effect, can carry significantly
The durable performance of high chip and service life.
Light emitting diode is led to envelope by the encapsulating structure of the light-emitting diode chip for backlight unit of the utility model using metal lead wire
Package material surface realizes by metal coupling and electrically draws that pin configuration is brief, can effectively shorten the length of circuit, is partly leading
Body encapsulation technology field is with a wide range of applications.
Description of the drawings
Fig. 1~Figure 12 is shown as the structure that each step of packaging method of the light-emitting diode chip for backlight unit of the utility model is presented
Schematic diagram.
Component label instructions
201 transparent substrates
202 draw pad
203 light-emitting diode chip for backlight unit
204 fluorescent material layers
205 metal lead wires
206 encapsulating materials
207 dielectric layers
208 trepannings
209 ubm layers
210 metal couplings
Specific implementation mode
Illustrate that the embodiment of the utility model, those skilled in the art can be by this theorys below by way of specific specific example
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific implementation modes are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig.1~Figure 12.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in illustrating then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change
Become, and its assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Figure 12, the present embodiment provides a kind of packaging method of light-emitting diode chip for backlight unit 203, the encapsulation
Method includes step：
As shown in Fig. 1~Fig. 2, step 1) is carried out first, a transparent substrates 201 are provided, in 201 surface of the transparent substrates
Form the extraction pad 202 of light emitting diode.
The transparent substrates 201 include one kind in substrate of glass, sapphire substrates and silicon base.In the present embodiment,
The transparent substrates 201 can be substrate of glass.
The extraction pad 202 of light emitting diode is formed in 201 surface of the transparent substrates using sputtering technology.
As shown in figure 3, step 2) is then carried out, in formation fluorescent material layer 204 in the transparent substrates 201.
In step 2), the fluorescent material layer 204 is formed in the transparent substrates 201 using spin coating proceeding, it is described
Area of the area of fluorescent material layer 204 not less than the light extraction region of the light emitting diode.
As shown in figure 4, then carrying out step 3), a light-emitting diode chip for backlight unit 203 is provided, by the light-emitting diode chip for backlight unit
203 are installed on the extraction pad 202 of the transparent substrates 201, to realize electrically drawing for the light-emitting diode chip for backlight unit 203
Go out, the extraction pad 202 has exposed surface；
In step 3), the electrode of the light-emitting diode chip for backlight unit 203 is installed in the transparent substrates by metal solder joints
On 201 extraction pad 202.The material of the metal solder joints can be the metal materials such as copper, gold, silver, aluminium, tin.
In this step, the fluorescent material is in semi-cured state, so that the light-emitting diode chip for backlight unit 203 is installed
After on the extraction pad 202, the light-emitting surface of the light-emitting diode chip for backlight unit 203 and the fluorescent material close proximity, one
Aspect can avoid occurring gap or cavity etc. between the fluorescent material and the light-emitting surface of the light-emitting diode chip for backlight unit 203, carry
On the other hand the light extraction efficiency of high fluorescence property and light-emitting diode chip for backlight unit 203 can enhance the light-emitting diode chip for backlight unit 203
With the bond strength between the transparent substrates 201, the service life of encapsulating structure is improved.
The fluorescent material may include the mixture of phosphor and silica gel and the mixture of phosphor and epoxy resin
In one kind.
As shown in figure 5, then carrying out step 4), metal lead wire 205 is formed in the exposed surface for drawing pad 202,
The metal lead wire 205 upwardly extends, and the top of the metal lead wire 205 is not less than the top of the light-emitting diode chip for backlight unit 203
Face.
There are traditional hot welding some to be difficult to the defect overcome, for example, cleaning is asked after the generation of thermal stress, welding
Topic lacks flexibility and quality and is difficult to control etc..To make the input/output tie point of core on-chip circuit and being inscribed for lead frame
Realize that the lead of electrical connection, bonding wire craft (Wire Bonding) there should be conductance as connection lead between contact
Rate is high, and conductive capability is strong, strong with the binding force of conductor material, the feature performance benefits such as stable chemical performance.
In the present embodiment, the bonding wire craft includes hot pressing bonding wire craft, supersonic welding Wiring technology and thermosonic
One kind in bonding wire craft.The material of the metal lead wire 205 includes one kind in Au and Cu.For example, the metal lead wire 205
It can select as Al, can complete to weld at a lower temperature using supersonic welding Wiring technology, technique can be greatly reduced
Temperature.For another example, it is Au that the metal lead wire 205205, which is selected, can obtain excellent electric conductivity.
As shown in Fig. 6~Fig. 7, step 5) is then carried out, the light-emitting diode chip for backlight unit is encapsulated using encapsulating material 206
203, the metal lead wire 205 is exposed to the encapsulating material 206.
As an example, using the method that encapsulating material 206 encapsulates the light-emitting diode chip for backlight unit 203 include compression forming,
One kind in Transfer molding, fluid-tight molding, vacuum lamination and spin coating, the encapsulating material 206 include polyimides, silica gel
And one kind in epoxy resin.
As shown in Figure 8 to Figure 11, step 6) is then carried out, in formation ubm layer 209 on the encapsulating material 206
And metal coupling 210, to realize the electrical extraction of the metal lead wire 205.
As an example, step 6) includes：
Step 6-1), dielectric layer 207 is formed in 206 surface of the encapsulating material, and formed and shown in the dielectric layer 207
Reveal the trepanning 208 of the metal lead wire 205, the material of the dielectric layer 207 includes epoxy resin, silica gel, PI, PBO, BCB, oxygen
SiClx, phosphorosilicate glass, the combination of one or more of fluorine-containing glass.
Step 6-2), in the trepanning 208 make ubm layer 209, the ubm layer 209 with it is described
Metal lead wire 205 is electrically connected；
Step 6-3), solder metal is formed in 209 surface of the ubm layer using electroplating technology；
Step 6-4), using high temperature reflow processes in formation metal coupling 210, the metal coupling in the salient point lower layer
210 include gold solder ball convex block, gold-tin alloy soldered ball convex block, leypewter soldered ball convex block, the convex one kind in the block of sn-ag alloy soldered ball.
As shown in figure 12, the packaging method includes wafer-level packaging method, and the transparent substrates 201 include wafer scale
Transparent substrates 201, the packaging method further include step 7), are cut to the encapsulating structure of wafer scale, to obtain multiple phases
The encapsulation unit of mutual independent light emitting diode.
As shown in figure 12, the present embodiment also provides a kind of encapsulating structure of light-emitting diode chip for backlight unit 203, the encapsulating structure
Including：Transparent substrates 201 have in the transparent substrates 201 and draw pad 202；Metal lead wire 205 is connected to the extraction
On pad 202, the metal lead wire 205 upwardly extends；Light-emitting diode chip for backlight unit 203 is installed on the extraction pad 202,
To realize the electrical extraction of the light-emitting diode chip for backlight unit 203；Fluorescent material layer 204 is located at the light-emitting diode chip for backlight unit 203
Between the transparent substrates 201；Encapsulating material 206 is covered in the light-emitting diode chip for backlight unit 203, and the metal lead wire
205 are exposed to the encapsulating material 206；And ubm layer 209 and metal coupling 210, it is formed in the encapsulating material
On 206, to realize the electrical extraction of the metal lead wire 205.
The transparent substrates 201 include one kind in substrate of glass, sapphire substrates and silicon base.
Area of the area of the fluorescent material layer 204 not less than the light extraction region of the light emitting diode.
On the one hand the light-emitting surface of the light-emitting diode chip for backlight unit 203 and the fluorescent material close proximity can avoid described
Occur gap or cavity etc. between fluorescent material and the light-emitting surface of the light-emitting diode chip for backlight unit 203, improve fluorescence property and
On the other hand the light extraction efficiency of light-emitting diode chip for backlight unit 203 can enhance the light-emitting diode chip for backlight unit 203 and the transparent substrates
Bond strength between 201 improves the service life of encapsulating structure.
The material of the metal lead wire 205 includes one kind in Au and Cu.
The encapsulating material 206 includes one kind in polyimides, silica gel and epoxy resin.
The ubm layer 209 and metal coupling 210 include：Dielectric layer 207 is formed in the encapsulating material 206
Surface is formed with the trepanning 208 for appearing the metal lead wire 205 in the dielectric layer 207；Ubm layer 209, is made in
In the trepanning 208, the ubm layer 209 is electrically connected with the metal lead wire 205；Metal coupling 210, is formed in
209 surface of the ubm layer.Further, the material of the dielectric layer 207 include epoxy resin, silica gel, PI, PBO,
BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass；The metal coupling 210 includes gold solder ball
Convex block, gold-tin alloy soldered ball convex block, leypewter soldered ball convex block, the convex one kind in the block of sn-ag alloy soldered ball.
As described above, the encapsulating structure and packaging method of the light-emitting diode chip for backlight unit 203 of the utility model, have with following
Beneficial effect：
The use fan-out package structure that the light-emitting diode chip for backlight unit 203 of the utility model is innovated, packaging density is high, can have
Effect reduces encapsulation volume.
The utility model does not need traditional package substrates, such as aluminium substrate, has good heat dissipation effect, can carry significantly
The durable performance of high chip and service life.
The encapsulating structure of the light-emitting diode chip for backlight unit 203 of the utility model is drawn light emitting diode using metal lead wire 205
Go out to 206 surface of encapsulating material, electrical extraction is realized by metal coupling 210, pin configuration is brief, can effectively shorten circuit
Length is with a wide range of applications in technical field of semiconductor encapsulation.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications completed under refreshing and technological thought or change, should be covered by the claim of the utility model.
Claims (8)
1. a kind of encapsulating structure of light-emitting diode chip for backlight unit, which is characterized in that the encapsulating structure includes：
Transparent substrates have in the transparent substrates and draw pad；
Metal lead wire is connected on the extraction pad, and the metal lead wire upwardly extends；
Light-emitting diode chip for backlight unit is installed on the extraction pad, to realize the electrical extraction of the light-emitting diode chip for backlight unit；
Fluorescent material layer, between the light-emitting diode chip for backlight unit and the transparent substrates；
Encapsulating material is covered in the light-emitting diode chip for backlight unit, and the metal lead wire is exposed to the encapsulating material；And
Ubm layer and metal coupling are formed on the encapsulating material, to realize the electrical extraction of the metal lead wire.
2. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The fluorescent material layer
Area of the area not less than the light extraction region of the light emitting diode.
3. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The light-emitting diodes tube core
The light-emitting surface of piece and the fluorescent material close proximity.
4. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The material of the metal lead wire
Material includes one kind in Au and Cu.
5. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The encapsulating material includes
One kind in polyimides, silica gel and epoxy resin.
6. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The ubm layer
And metal coupling includes：
Dielectric layer is formed in the encapsulating material surface, the trepanning for appearing the metal lead wire is formed in the dielectric layer；
Ubm layer is made in the trepanning, and the ubm layer is electrically connected with the metal lead wire；
Metal coupling is formed in the ubm layer surface.
7. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 6, it is characterised in that：The material of the dielectric layer
Including epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass；
The metal coupling includes gold solder ball convex block, gold-tin alloy soldered ball convex block, leypewter soldered ball convex block, sn-ag alloy soldered ball convex block
In one kind.
8. the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1, it is characterised in that：The transparent substrates include
One kind in substrate of glass, sapphire substrates and silicon base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721889098.6U CN207852728U (en) | 2017-12-29 | 2017-12-29 | The encapsulating structure of light-emitting diode chip for backlight unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721889098.6U CN207852728U (en) | 2017-12-29 | 2017-12-29 | The encapsulating structure of light-emitting diode chip for backlight unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207852728U true CN207852728U (en) | 2018-09-11 |
Family
ID=63419649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721889098.6U Active CN207852728U (en) | 2017-12-29 | 2017-12-29 | The encapsulating structure of light-emitting diode chip for backlight unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207852728U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994593A (en) * | 2017-12-29 | 2019-07-09 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and packaging method of light-emitting diode chip for backlight unit |
| CN113540329A (en) * | 2020-04-16 | 2021-10-22 | 隆达电子股份有限公司 | Light emitting element, package element, and method for manufacturing light emitting element |
| WO2023046069A1 (en) * | 2021-09-27 | 2023-03-30 | 佛山市国星光电股份有限公司 | Display module, method for manufacturing display module, and display device |
-
2017
- 2017-12-29 CN CN201721889098.6U patent/CN207852728U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994593A (en) * | 2017-12-29 | 2019-07-09 | 中芯长电半导体（江阴）有限公司 | The encapsulating structure and packaging method of light-emitting diode chip for backlight unit |
| CN113540329A (en) * | 2020-04-16 | 2021-10-22 | 隆达电子股份有限公司 | Light emitting element, package element, and method for manufacturing light emitting element |
| CN113540329B (en) * | 2020-04-16 | 2023-01-10 | 隆达电子股份有限公司 | Package element and method for manufacturing light emitting element |
| US11664483B2 (en) | 2020-04-16 | 2023-05-30 | Lextar Electronics Corporation | Light emitting device, package device and method of light emitting device manufacturing |
| WO2023046069A1 (en) * | 2021-09-27 | 2023-03-30 | 佛山市国星光电股份有限公司 | Display module, method for manufacturing display module, and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105990265B (en) | The package module and its manufacturing method of circuit for power conversion | |
| US20120025241A1 (en) | Surface mounted led packaging structure and method based on a silicon substrate | |
| CN207852728U (en) | The encapsulating structure of light-emitting diode chip for backlight unit | |
| TW554553B (en) | Sub-mount for high power light emitting diode | |
| CN100380694C (en) | Method for packing inverted mounting LED chip | |
| CN105870098B (en) | Mosfet package structure and preparation method thereof | |
| TW201349599A (en) | Light emitting apparatus and light emitting module thereof | |
| CN102983114B (en) | High performance power transistor with Ultrathin packaging | |
| TW201101548A (en) | LED package structure with a plurality of standby pads for increasing wire-bonding yield and method for manufacturing the same | |
| CN108305856A (en) | The encapsulating structure and packaging method of antenna | |
| CN102222625A (en) | Manufacturing method of light-emitting diode (LED) packaging structure and base thereof | |
| CN108417982A (en) | The encapsulating structure and packaging method of antenna | |
| CN108336494A (en) | The encapsulating structure and packaging method of antenna | |
| CN206806321U (en) | A kind of semiconductor package of no lead frame | |
| CN207938809U (en) | The encapsulating structure of antenna | |
| CN107768500B (en) | LED support and light-emitting device thereof | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN209104141U (en) | A kind of chip exposed type encapsulating structure | |
| TWI285968B (en) | Chip with high efficient heat dissipation and brightness | |
| TWI393273B (en) | Method for manufacturing light emitting diode assembly | |
| CN207852727U (en) | The encapsulating structure of light-emitting diode chip for backlight unit | |
| CN207165562U (en) | The chip-packaging structure of EMI protection | |
| CN109994593A (en) | The encapsulating structure and packaging method of light-emitting diode chip for backlight unit | |
| CN204011481U (en) | The separated also high reflectance circuit board of integrated LED chip of electric heating | |
| CN209691748U (en) | Semiconductor package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |
|
| CP03 | Change of name, title or address |